WO2008079651A1 - Chemical mechanical planarization composition, system, and method of use - Google Patents

Chemical mechanical planarization composition, system, and method of use Download PDF

Info

Publication number
WO2008079651A1
WO2008079651A1 PCT/US2007/086955 US2007086955W WO2008079651A1 WO 2008079651 A1 WO2008079651 A1 WO 2008079651A1 US 2007086955 W US2007086955 W US 2007086955W WO 2008079651 A1 WO2008079651 A1 WO 2008079651A1
Authority
WO
WIPO (PCT)
Prior art keywords
working liquid
fluorochemical surfactant
wafer
removal rate
proline
Prior art date
Application number
PCT/US2007/086955
Other languages
French (fr)
Inventor
John J. Gagliardi
Patricia M. Savu
Original Assignee
3M Innovative Properties Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Company filed Critical 3M Innovative Properties Company
Priority to EP07869084A priority Critical patent/EP2109648B1/en
Priority to JP2009543056A priority patent/JP5363338B2/en
Priority to CN2007800477343A priority patent/CN101568613B/en
Priority to KR1020097012681A priority patent/KR101432852B1/en
Publication of WO2008079651A1 publication Critical patent/WO2008079651A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Definitions

  • the disclosure relates generally to a composition for chemical mechanical planarization (CMP). More particularly, the disclosure relates to a composition that can be used with a fixed abrasive article in a CMP system and method.
  • CMP chemical mechanical planarization
  • semiconductor wafers used in semiconductor fabrication typically undergo numerous processing steps, including deposition, patterning, and etching steps. Details of these manufacturing steps for semiconductor wafers are reported by Tonshoff et al., "Abrasive Machining of Silicon", published in the Annals of the International Institution for Production Engineering Research, (Volume 39/2/1990), pp. 621-635. In each manufacturing step, it is often necessary or desirable to modify or refine an exposed surface of the wafer in order to prepare the wafer for subsequent fabrication or manufacturing steps. For example, semiconductor wafers having shallow trench isolation (STI) structures require planarization of the dielectric material prior to further processing.
  • STI shallow trench isolation
  • One method of modifying or refining exposed surfaces of wafers employs processes that treat a wafer surface with a slurry containing a plurality of loose abrasive particles dispersed in a liquid. Typically this slurry is applied to a polishing pad and the wafer surface is then ground or moved against the pad in order to remove or take off material from the wafer surface. Generally, the slurry also contains additives that chemically react with the wafer surface and which may provide CMP process selectivity, for example, "stop on nitride" selectivity. This type of process is commonly referred to as a slurry-based chemical-mechanical planarization (CMP) process.
  • CMP chemical-mechanical planarization
  • slurry-based CMP processes require the slurry abrasive processes must be carefully monitored in order to achieve a desired wafer surface topography and avoid dishing of the wafer surface.
  • a second limitation is potential for scratching the wafer surface associated with use of loose abrasive slurries.
  • Another limitation is the mess associated with slurries, and the large number of particles that must be removed from the surface of the wafer and disposed of following wafer treatment. Handling and disposal of these slurries generates additional processing costs for the semiconductor wafer fabricator.
  • An alternative to slurry-based CMP processes uses an abrasive article to modify or refine a semiconductor surface.
  • a CMP process that uses abrasive articles has been reported, for example, by Bruxvoort et al. in U.S. Patent No. 5,958,794 and by Kaisaki et al. in U.S. Patent No. 6,194,317.
  • the disclosed abrasive articles may have a textured abrasive surface that includes abrasive particles dispersed in a binder.
  • the abrasive article may be contacted with a semiconductor wafer surface, often in the presence of a fluid or working liquid to provide a planar, uniform wafer surface.
  • Use of an abrasive article overcomes some, but not all limitations associated with CMP slurries.
  • the art continually searches for new and improved abrasive compositions and methods for slurry- free CMP processes.
  • the present disclosure relates generally to a composition, system and method for modifying an exposed surface of a semiconductor wafer. More particularly, the present disclosure relates to a composition that can be adjusted to control Oxide Removal Rate and Selectivity Ratio for modifying semiconductor wafers using a fixed abrasive CMP process.
  • the disclosure provides a working liquid substantially free of abrasive particles and including proline and a fluorochemical surfactant.
  • the working liquid is useful in chemical mechanical planarization (CMP) using a fixed abrasive article.
  • the disclosure provides a wafer planarization system including a three-dimensional, textured, fixed abrasive article, and a working liquid including proline and a fluorochemical surfactant.
  • the fixed abrasive article includes a multiplicity of abrasive particles and a binder.
  • the working liquid exhibits a pH from 9 to 11 and is substantially free of abrasive particles.
  • the abrasive article includes precisely shaped abrasive composites.
  • the disclosure provides a method for polishing a wafer by providing a wafer comprising a first region comprising silicon dioxide and a second region comprising silicon nitride, contacting the wafer with a three-dimensional, textured, fixed abrasive article comprising a plurality of abrasive particles and a binder, and relatively moving the wafer and the fixed abrasive article in the presence of a liquid medium comprising proline and a fluorochemical surfactant.
  • the working liquid exhibits a pH from 9 to 11. In certain embodiments, the working liquid exhibits a pH from 10 to 10.5.
  • compositions and methods of the present disclosure unexpectedly enhance the performance of chemical mechanical planarization processes that use fixed abrasives rather than polishing pads and slurries.
  • the use of a fluorochemical surfactant in solutions with proline in fixed abrasive CMP processes has been found to achieve high dielectric oxide material removal rates while maintaining stop on nitride selectivity.
  • the removal rate of dielectric material e.g. metal oxide such as silicon dioxide
  • the working liquid is selected to have an Oxide Removal Rate of at least about 500 angstroms per minute (A/min.). In other embodiments, the working liquid is selected to have an Oxide Removal Rate of at least 700 A/min.
  • the composition of the working fluid is selected, at least in part, to increase the Oxide Removal Rate and the Selectivity Ratio.
  • the use of a fluorochemical surfactant with proline under alkaline pH conditions increases the Oxide Removal Rate while retaining the nitride removal rate in Shallow Trench Isolation (STI), thereby increasing the oxide over nitride Selectivity Ratio associated with the use of proline in the working fluid of a fixed abrasive CMP process for STI.
  • the compositions of the present disclosure may produce an Oxide Removal Rate of at least about 500 A/min. and an oxide over nitride Selectivity Ratio of at least 5.
  • the compositions of the present disclosure may produce an Oxide Removal Rate of at least 700 A/min., and a Selectivity Ratio of at least 30.
  • the fluorochemical surfactant concentration is selected, at least in part, to control Oxide Removal Rate.
  • the fluorochemical surfactant concentration is selected to be greater than 0.005%, and in certain embodiments, at least 0.02% of the working liquid on a weight basis.
  • the fluorochemical surfactant concentration is less than 1.0%, and in certain embodiments, no more than 0.6% on a weight basis.
  • Some embodiments of the present disclosure provide certain advantages over the art pertaining to slurry-based CMP.
  • the composition, system and method of the present disclosure may provide reduced dishing of a wafer surface, an ability to use lower CMP pad pressure, and improved control of the CMP process relative to a slurry-based CMP process.
  • Other embodiments of the present disclosure provide certain advantages over the art pertaining to fixed abrasive CMP.
  • the composition, system and method of the present disclosure may provide a rapid Oxide Removal Rate and an increase in oxide over nitride Selectivity Ratio even at a moderately alkaline pH condition, for example, pH 9-11.
  • Abrasive composite refers to one of a plurality of shaped bodies that collectively provide a textured, three-dimensional abrasive article comprising abrasive particles distributed within a binder;
  • fixed abrasive article refers to an integral abrasive article that is substantially free of unattached abrasive particles except as may be generated during the planarization process;
  • abrasive composite refers to an abrasive composite having a molded shape that is the inverse of the mold cavity that is retained after the composite has been removed from the mold, wherein the composite can be substantially free of abrasive particles protruding beyond the exposed surface of the shape before the abrasive article has been used, as described by Pieper et al. in U.S. Pat. No. 5,152,917;
  • textured abrasive article refers to an abrasive article having raised portions and recessed portions in which at least the raised portions contain abrasive particles and binder;
  • three-dimensional abrasive article refers to an abrasive article having numerous abrasive particles extending throughout at least a portion of its thickness such that removing some of the particles during planarization exposes additional abrasive particles capable of performing the planarization function;
  • wafer refers to a semiconductor wafer in the form of a blank wafer (i.e., a wafer prior to processing for the purpose of adding topographical features such as metallized and insulating areas) or a processed wafer (i.e., a wafer after it has been subjected to one or more processing steps to add topographical features to the wafer surface);
  • Oxide Removal Rate refers to the rate or speed, generally expressed in angstroms per minute (A/min.), at which a dielectric oxide material may be removed from a wafer during a CMP process.
  • “Selectivity Ratio” refers to the ratio of the rate at which a first material (e.g., a dielectric oxide material such as silicon dioxide) can be removed, to the rate at which a second material (e.g., a barrier material such as silicon nitride) can be removed from a wafer during a CMP process.
  • a first material e.g., a dielectric oxide material such as silicon dioxide
  • a second material e.g., a barrier material such as silicon nitride
  • the disclosure provides a composition, system and method in which a working liquid substantially free of abrasive particles and including proline and a fluorochemical surfactant is used in a fixed abrasive CMP process.
  • the composition is a working liquid used with a fixed abrasive article in a fixed abrasive CMP system.
  • the fixed abrasive CMP composition, system and method may be useful for shallow trench isolation (STI) of a patterned wafer, in which it may be desirable to use a selective chemistry in the working liquid to obtain "stop on nitride" oxide removal selectivity, as described in U.S. Pat. No. 6,997,785 to Rueb et al.
  • STI shallow trench isolation
  • a wafer having a base and a plurality of shallow trench isolation structures is provided.
  • the shallow trench isolation structures are typically formed by depositing and patterning a silicon nitride layer to form a mask on the surface of the wafer, and then forming trenches using any of the etching processes known to those skilled in the art.
  • a dielectric layer may be deposited over the surface of the shallow trench isolation structures and into the spaces between the shallow trench isolation structures.
  • dielectric materials may be used, such as, for example, silicon dioxide.
  • silicon dioxide refers to silicon dioxide as well as doped variants of silicon dioxide, such as, for example, fluorine, boron, and/or phosphorous doped silicon dioxide.
  • a portion of the dielectric layer is then removed using the CMP process of the present disclosure to form the desired pattern.
  • the polished dielectric material and a nitride mask layer form a generally flat surface.
  • the mask layer functions as a stop layer for the CMP process that protects the shallow trench isolation structure from exposure to the CMP processing.
  • the mask layer is typically produced using a nitride material, for example, silicon nitride. It has been demonstrated that use of a fixed abrasive article and working liquid according to the present disclosure may provide reduced dishing of a wafer in a fixed abrasive CMP process as compared to a slurry-based CMP process.
  • CMP machines useful with the processes of the present disclosure are commercially available and known to those skilled in the art.
  • Exemplary CMP machines are commercially available from Applied Materials, Santa Clara, California, for example machines marketed as "APPLIED MATERIALS MIRRATM CMP POLISHER,” and "REFLEXION WEBTM.”
  • a CMP machine useful for the process of the present disclosure may be fitted with a fixed abrasive polishing article as reported, for example, by Bruxvoort et al. in U.S. Patent No. 5,958,794 and by Kaisaki et al. in U.S. Patent No. 6,194,317.
  • the abrasive article may be used to polish the exposed surface of the wafer in the presence of a liquid medium (i.e., working liquid).
  • Abrasive articles useful for the method of the present disclosure typically have a diameter in the range of 250 to 1,000 millimeters.
  • the abrasive article may rotate at a speed of at least 5 revolutions per minute (rpm), more preferably 10 rpm.
  • the abrasive article preferably rotates at a speed of at most 10,000 rpm, more preferably at a speed of at most 1,000 rpm, more preferably still at a speed of at most 250 rpm, most preferably at a speed of at most 60 rpm.
  • the abrasive article and the wafer may be rotated in the same direction. In other embodiments, the wafer and the abrasive article may be rotated in opposite directions.
  • the abrasive article can also be provided in other configurations, including, for example, sheets, rolls, or belts. In these configurations, the abrasive article can, for example, be fed linearly into the CMP process during polishing operations.
  • the abrasive article can be selected to be long lasting, e.g., the abrasive article can be selected, at least in part, to polish a minimum number of different wafers.
  • the abrasive article can also be selected based on Oxide Removal Rate. Additionally, the abrasive article can be selected based on its capability of yielding a semiconductor wafer having a desired flatness, surface finish, and minimal dishing. The materials, desired texture, and process used to make the abrasive article can all influence whether or not these criteria are met.
  • Abrasive articles useful in the CMP process of the present disclosure include those reported by Bruxvoort et al. in U.S. Patent No. 5,958,794 and by Kaisaki et al. in U.S. Patent No. 6,194,317.
  • a three-dimensional, textured, fixed abrasive article is used.
  • the abrasive article comprises ceria abrasive particles.
  • the abrasive articles comprise precisely shaped abrasive composites.
  • Exemplary abrasive articles having precisely shaped abrasive composites comprising ceria particles that are useful for the processes of the present disclosure include those commercially available from 3M Company, St. Paul, MN, and marketed as "3M SLURRYFREE CMP FIXED ABRASIVE 3152" and "3M SLURRYFREE CMP FIXED ABRASIVE 3154".
  • a presently preferred abrasive article having precisely shaped abrasive composites is a fixed abrasive pad sold under the product designation SWR542-125/10 by 3M Company, St. Paul, MN.
  • a working liquid is present at the interface between the abrasive article and the wafer.
  • the liquid flow rate typically is at least about 10 milliliters per minute (ml/min.), more preferably at least 25 ml/min.
  • the liquid flow rate typically is at most about 10,000 ml/min., more preferably at most about 500 ml/min., most preferably at most about 250 ml/min.
  • the working liquid of the present disclosure comprises pro line and a fluorochemical surfactant, and is substantially free of abrasive particles.
  • L-proline may be used with a fluorochemical surfactant.
  • the working liquid may also comprise water, and additives such as complexing agents, buffers, dispersing agents, and the like.
  • the working liquid is adjusted to a pH of at least about 9. In other embodiments, the working liquid is adjusted to a pH of at least about 10. In certain presently preferred embodiments, the working liquid pH is adjusted to about 10.5. In certain of these embodiments, the working liquid is adjusted to a pH that is no greater than about 11. In some embodiments, the working liquid is adjusted to a pH that is no greater than about 10.5. In some embodiments, the working liquid is adjusted to a pH in the range of about 9 to about 11. In some embodiments, the working liquid is adjusted to a pH in the range of about 10 to about 10.5. The pH can be adjusted using methods and solutions known to those skilled in the art, including, for example, the addition of KOH or NH 4 OH. In some embodiments, the working liquid is buffered. In some embodiments, the working liquid may be buffered using other amino acids, for example, histidine, glycine, lysine, arginine, and the like.
  • the working liquid comprises at least 0.1% pro line by weight. In other embodiments, the working liquid comprises at least 0.5% pro line by weight. In yet further embodiments, the working liquid comprises at least 1% pro line by weight. In some embodiments, the working liquid comprises about 2.5% proline by weight. In certain of these embodiments, the working liquid comprises at most 8% proline by weight. In some embodiments, the working liquid comprises at most 5% proline by weight. In yet further embodiments, the working liquid comprises at most 3% proline by weight.
  • the fluorochemical surfactant can be virtually any highly or fully fluorinated chemical compound that exhibits surface active properties.
  • the fluorochemical surfactant is a nonionic surfactant.
  • the fluorochemical surfactant has the formula RiCH 2 CH 2 O(CH 2 CH 2 O) x H, where Ri is F(CF 2 CF 2 )3_g and x is an integer > 1.
  • Suitable fluorochemical surfactants include the ZonylTM surfactants (manufactured by E.I. DuPont de Nemours Corp., Wilmington, DE) and the FluoradTM surfactants (manufactured by 3M Company, St. Paul, MN).
  • Preferred fluorochemical surfactants include ZonylTM FSN; and 3M L 19909, 3M L 19330, and 3M NovecTM 4432 surfactants.
  • the concentration of a fluorochemical surfactant ("concentration") useful in the processes of the present disclosure can be selected to control dielectric (e.g. silicon dioxide) removal rate, dielectric to barrier layer (e.g. silicon dioxide to silicon nitride) selectivity, or a combination thereof.
  • the fluorochemical surfactant concentration is selected to be greater than 0.005%.
  • the fluorochemical surfactant concentration is selected to be at least 0.01% of the working liquid on a weight basis.
  • a fluorochemical surfactant concentration of at least 0.02% by weight may be used.
  • a fluorochemical surfactant concentration of at least 0.2% by weight may be used.
  • a fluorochemical surfactant concentration of at least 0.6% by weight may be used.
  • the maximum preferred concentration of the fluorochemical surfactant may be readily determined, for example, by the onset of friction induced audible "squeeling" during CMP processing, which may occur at concentrations greater than about 0.2% by weight with some fluorochemical surfactants.
  • the maximum preferred concentration may be determined, for example, by visual observation of undesirable slippage of the wafer during removal of the wafer from the fixed abrasive pad surface (i.e. "de-chucking"), which may occur at concentrations greater than about 0.5% by weight with some fluorochemical surfactants.
  • a fluorochemical surfactant concentration of less than 1.0% may be used.
  • a fluorochemical surfactant concentration of no more than 0.6% may be used.
  • the fluorochemical surfactant concentration is no more than 0.2%, and in particular exemplary embodiments, no more than 0.02% on a weight basis of the working liquid.
  • Processing parameters for the present disclosure can be selected to achieve desired removal rates and/or selectivity by the skilled artisan guided by this disclosure.
  • the concentrations of pro line and the fluorochemical surfactant, and the pH of the working liquid can be adjusted to control the removal rate of the dielectric material.
  • the concentration of the fluorochemical surfactant is adjusted to control the removal rate of the dielectric material.
  • a series of at least two working liquids having differing concentrations can be tested to determine the optimal concentration.
  • a series of at least two working liquids having differing pH levels can be tested to determine the optimal pH level.
  • the removal rate of dielectric material may be, in some embodiments, an important characteristic of the fixed abrasive CMP process affected by the composition of the working fluid, particularly the concentration of the fluorochemical surfactant.
  • the working liquid is selected to have an Oxide Removal Rate of at least about 500 angstroms per minute (A/min.). In other embodiments, the working liquid is selected to have an Oxide Removal Rate of at least 1000 A/min. In further embodiments, the working liquid is selected to have an Oxide Removal Rate of at least 2,000 A/min. In additional embodiments, the working liquid is selected to have an Oxide Removal Rate of at least 2,500 A/min. In further embodiments, the working liquid is selected to have an Oxide Removal Rate of at least about 3,000 A/min.
  • the Selectivity Ratio that is, the ratio of the Oxide Removal Rate to the nitride removal rate, may be taken as a measure of stop on nitride selectivity useful in CMP and particularly useful in shallow trench isolation.
  • the working liquid is selected to have a dielectric (e.g. oxide) to barrier layer (e.g., nitride) Selectivity Ratio of at least about 5.
  • the working liquid is selected to have a dielectric to barrier layer Selectivity Ratio of at least about 20.
  • the working liquid is selected to have a dielectric to barrier layer Selectivity Ratio of at least about 50.
  • the working liquid is selected to have a dielectric to barrier layer Selectivity Ratio of at least about 100.
  • the working liquid is selected to have a dielectric to barrier layer Selectivity Ratio of at least about 250.
  • the composition of the working fluid is selected, at least in part, to increase the Oxide Removal Rate and the Selectivity Ratio.
  • the use of a fluorochemical surfactant with proline under alkaline pH conditions increases the Oxide Removal Rate while retaining the nitride removal rate in Shallow Trench Isolation (STI), thereby increasing the oxide over nitride Selectivity Ratio associated with the use of pro line in the working fluid of a fixed abrasive CMP process for STI.
  • the compositions of the present disclosure may produce an Oxide Removal Rate of at least about 500 A/min. and an oxide over nitride Selectivity Ratio of at least 5.
  • the compositions of the present disclosure may produce an Oxide Removal Rate of at least 700 A/min., and a Selectivity Ratio of at least 30. In other exemplary embodiments, the compositions of the present disclosure may produce an Oxide Removal Rate of at least 1000 A/min. and an oxide over nitride Selectivity Ratio of at least 50. In further embodiments, the compositions of the present disclosure can be modified to produce an Oxide Removal Rate of at least 2000 A/min. and an oxide over nitride Selectivity Ratio of at least 100. In additional embodiments, the compositions of the present disclosure can be modified to produce an Oxide Removal Rate of at least about 3000 A/min. and an oxide over nitride Selectivity Ratio of at least 250.
  • polish tests were performed on a Mirra tool (from Applied Materials, Inc. of Santa Clara, CA) using an SWR542-125/10 three-dimensional, textured, fixed abrasive pad (from 3M Company, St. Paul, MN).
  • the previously used fixed abrasive pad was prepared by conditioning the surface for 36 seconds with a Morgan CMP-20000TS conditioner (Morgan Advanced Ceramics, Inc., Hayward, CA) at a down force of 4 kg (9 lbs) operating at 50 revolutions per minute (rpm) and five sweeps per minute in deionized water.
  • TEOS blanket tetraethylsilicate (TEOS) blanket wafers were polished for 60 seconds at 20.7 kPa (3 psi) and 30 rpm, using a working liquid comprising a 2.5% solution of L-proline in deionized water which had been adjusted to pH 10.5 using potassium hydroxide. Polishing solutions were supplied at 200 mL/min. The working liquid to be tested was then used to polish ten 200 mm TEOS blanket wafers to establish silicon Oxide Removal Rate followed by one previously cleared 0.17 micron DRAM wafer to establish silicon nitride removal rate.
  • TEOS tetraethylsilicate
  • the removal rates were obtained by measuring the thickness of the respective materials before and after polishing using an Optiprobe 2600 (Therma-Wave, Fremont, CA).
  • the polishing results using 2.5% L-proline at pH 10.5 without a fluorochemical surfactant in a fixed abrasive CMP process are presented in Table 2.
  • a working liquid containing 0.02% Zonyl FSN and 2.5% L-proline at pH 10.5 produced an average Oxide Removal Rate of 1006.90 A/min., a nitride removal rate of
  • a working liquid containing 0.2% Zonyl FSN and 2.5% L-proline at pH 10.5 produced an average Oxide Removal Rate of 1250.80 A/min., a nitride removal rate of
  • a working liquid containing 0.02% Zonyl FSN and 2.5% L-proline at pH 10.5 produced an average Oxide Removal Rate of 801.20 A/min., a nitride removal rate of
  • a working liquid containing 0.2% Zonyl FSN and 2.5% L-proline at pH 10.5 produced an average Oxide Removal Rate of 1050.38 A/min., a nitride removal rate of 29.0 A/min., and a Selectivity Ratio of 38.11.
  • Comparative Example B
  • the silicon nitride removal rate was 21.43 ⁇ 6.08 A/min.
  • the Selectivity Ratio was 23.76 ⁇ 7.43.
  • This Comparative Example illustrates use of a fluorochemical surfactant below an amount effective to obtain an Oxide Removal Rate of 500 A/min.
  • a working liquid containing 0.005% 3M L 19909 and 2.5% L-proline at pH 11.0 produced an average Oxide
  • a working liquid containing 0.02% 3M L 19909 and 2.5% L-proline at pH 11.0 produced an average Oxide Removal Rate of 705.33 A/min., a nitride removal rate of
  • a working liquid containing 0.2% 3M L19909 and 2.5% L-proline at pH 11.0 produced an average Oxide Removal Rate of 547.00 A/min., a nitride removal rate of
  • TEOS wafers were run for 60 seconds at 20.7 kPa (3 psi) pressure and 30 rpm in a working liquid of 2.5% L-proline at a pH of 10.5. Then a series of working liquids were run in the following manner:

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The disclosure relates to chemical mechanical planarization (CMP) polishing compositions including proline and a fluorochemical surfactant. The wafer polishing composition may be used as a solution substantially free of abrasive particles, the composition of which can be adjusted to control Oxide Removal Rate and oxide over nitride Selectivity Ratio in Shallow Trench Isolation (STI) processing of semiconductor wafers using a fixed abrasive CMP process. In certain embodiments, the disclosure provides a working liquid for fixed abrasive CMP including proline and a fluorochemical surfactant at a pH from 9 to 11. When used in a fixed abrasive CMP system and method for STI, exemplary working liquids may yield an Oxide Removal Rate of at least 500 angstroms per minute, and an oxide over nitride Selectivity Ratio of at least 5.

Description

CHEMICAL MECHANICAL PLANARIZATION COMPOSITION, SYSTEM, AND METHOD OF USE
Technical Field
[0001] The disclosure relates generally to a composition for chemical mechanical planarization (CMP). More particularly, the disclosure relates to a composition that can be used with a fixed abrasive article in a CMP system and method.
Background
[0002] During integrated circuit manufacture, semiconductor wafers used in semiconductor fabrication typically undergo numerous processing steps, including deposition, patterning, and etching steps. Details of these manufacturing steps for semiconductor wafers are reported by Tonshoff et al., "Abrasive Machining of Silicon", published in the Annals of the International Institution for Production Engineering Research, (Volume 39/2/1990), pp. 621-635. In each manufacturing step, it is often necessary or desirable to modify or refine an exposed surface of the wafer in order to prepare the wafer for subsequent fabrication or manufacturing steps. For example, semiconductor wafers having shallow trench isolation (STI) structures require planarization of the dielectric material prior to further processing. [0003] One method of modifying or refining exposed surfaces of wafers employs processes that treat a wafer surface with a slurry containing a plurality of loose abrasive particles dispersed in a liquid. Typically this slurry is applied to a polishing pad and the wafer surface is then ground or moved against the pad in order to remove or take off material from the wafer surface. Generally, the slurry also contains additives that chemically react with the wafer surface and which may provide CMP process selectivity, for example, "stop on nitride" selectivity. This type of process is commonly referred to as a slurry-based chemical-mechanical planarization (CMP) process. [0004] One limitation of slurry-based CMP processes, however, is that the slurry abrasive processes must be carefully monitored in order to achieve a desired wafer surface topography and avoid dishing of the wafer surface. A second limitation is potential for scratching the wafer surface associated with use of loose abrasive slurries. Another limitation is the mess associated with slurries, and the large number of particles that must be removed from the surface of the wafer and disposed of following wafer treatment. Handling and disposal of these slurries generates additional processing costs for the semiconductor wafer fabricator.
[0005] An alternative to slurry-based CMP processes uses an abrasive article to modify or refine a semiconductor surface. A CMP process that uses abrasive articles has been reported, for example, by Bruxvoort et al. in U.S. Patent No. 5,958,794 and by Kaisaki et al. in U.S. Patent No. 6,194,317. The disclosed abrasive articles may have a textured abrasive surface that includes abrasive particles dispersed in a binder. In use, the abrasive article may be contacted with a semiconductor wafer surface, often in the presence of a fluid or working liquid to provide a planar, uniform wafer surface. Use of an abrasive article overcomes some, but not all limitations associated with CMP slurries. The art continually searches for new and improved abrasive compositions and methods for slurry- free CMP processes.
Summary
[0006] The present disclosure relates generally to a composition, system and method for modifying an exposed surface of a semiconductor wafer. More particularly, the present disclosure relates to a composition that can be adjusted to control Oxide Removal Rate and Selectivity Ratio for modifying semiconductor wafers using a fixed abrasive CMP process.
[0007] In one aspect, the disclosure provides a working liquid substantially free of abrasive particles and including proline and a fluorochemical surfactant. In some embodiments, the working liquid is useful in chemical mechanical planarization (CMP) using a fixed abrasive article.
[0008] In another aspect, the disclosure provides a wafer planarization system including a three-dimensional, textured, fixed abrasive article, and a working liquid including proline and a fluorochemical surfactant. In some embodiments, the fixed abrasive article includes a multiplicity of abrasive particles and a binder. In certain embodiments, the working liquid exhibits a pH from 9 to 11 and is substantially free of abrasive particles. In some systems, the abrasive article includes precisely shaped abrasive composites. [0009] In a further aspect, the disclosure provides a method for polishing a wafer by providing a wafer comprising a first region comprising silicon dioxide and a second region comprising silicon nitride, contacting the wafer with a three-dimensional, textured, fixed abrasive article comprising a plurality of abrasive particles and a binder, and relatively moving the wafer and the fixed abrasive article in the presence of a liquid medium comprising proline and a fluorochemical surfactant. In some embodiments, the working liquid exhibits a pH from 9 to 11. In certain embodiments, the working liquid exhibits a pH from 10 to 10.5.
[0010] The compositions and methods of the present disclosure unexpectedly enhance the performance of chemical mechanical planarization processes that use fixed abrasives rather than polishing pads and slurries. The use of a fluorochemical surfactant in solutions with proline in fixed abrasive CMP processes has been found to achieve high dielectric oxide material removal rates while maintaining stop on nitride selectivity. [0011] The removal rate of dielectric material (e.g. metal oxide such as silicon dioxide) may be, in some embodiments, an important characteristic of the fixed abrasive CMP process affected by the composition of the working fluid, particularly the concentration of the fluorochemical surfactant. In some embodiments, the working liquid is selected to have an Oxide Removal Rate of at least about 500 angstroms per minute (A/min.). In other embodiments, the working liquid is selected to have an Oxide Removal Rate of at least 700 A/min.
[0012] In further embodiments, the composition of the working fluid is selected, at least in part, to increase the Oxide Removal Rate and the Selectivity Ratio. In one embodiment of the present disclosure, the use of a fluorochemical surfactant with proline under alkaline pH conditions increases the Oxide Removal Rate while retaining the nitride removal rate in Shallow Trench Isolation (STI), thereby increasing the oxide over nitride Selectivity Ratio associated with the use of proline in the working fluid of a fixed abrasive CMP process for STI. In certain embodiments, the compositions of the present disclosure may produce an Oxide Removal Rate of at least about 500 A/min. and an oxide over nitride Selectivity Ratio of at least 5. In other exemplary embodiments, the compositions of the present disclosure may produce an Oxide Removal Rate of at least 700 A/min., and a Selectivity Ratio of at least 30. [0013] In some embodiments, the fluorochemical surfactant concentration is selected, at least in part, to control Oxide Removal Rate. In exemplary embodiments, the fluorochemical surfactant concentration is selected to be greater than 0.005%, and in certain embodiments, at least 0.02% of the working liquid on a weight basis. In other exemplary embodiments, the fluorochemical surfactant concentration is less than 1.0%, and in certain embodiments, no more than 0.6% on a weight basis. [0014] Some embodiments of the present disclosure provide certain advantages over the art pertaining to slurry-based CMP. In some embodiments, the composition, system and method of the present disclosure may provide reduced dishing of a wafer surface, an ability to use lower CMP pad pressure, and improved control of the CMP process relative to a slurry-based CMP process. Other embodiments of the present disclosure provide certain advantages over the art pertaining to fixed abrasive CMP. In some embodiments, the composition, system and method of the present disclosure may provide a rapid Oxide Removal Rate and an increase in oxide over nitride Selectivity Ratio even at a moderately alkaline pH condition, for example, pH 9-11.
[0015] The above Summary is not intended to describe each disclosed embodiment or every implementation of the present disclosure and their advantages. The Detailed Description that follows more particularly exemplifies illustrative embodiments. Other advantages will be apparent to one skilled in the art from this disclosure.
Detailed Description
[0016] In the context of the present disclosure:
[0017] "Abrasive composite" refers to one of a plurality of shaped bodies that collectively provide a textured, three-dimensional abrasive article comprising abrasive particles distributed within a binder;
[0018] "fixed abrasive article" refers to an integral abrasive article that is substantially free of unattached abrasive particles except as may be generated during the planarization process;
[0019] "precisely shaped abrasive composite" refers to an abrasive composite having a molded shape that is the inverse of the mold cavity that is retained after the composite has been removed from the mold, wherein the composite can be substantially free of abrasive particles protruding beyond the exposed surface of the shape before the abrasive article has been used, as described by Pieper et al. in U.S. Pat. No. 5,152,917;
[0020] "textured abrasive article" refers to an abrasive article having raised portions and recessed portions in which at least the raised portions contain abrasive particles and binder;
[0021] "three-dimensional abrasive article" refers to an abrasive article having numerous abrasive particles extending throughout at least a portion of its thickness such that removing some of the particles during planarization exposes additional abrasive particles capable of performing the planarization function;
[0022] "wafer" refers to a semiconductor wafer in the form of a blank wafer (i.e., a wafer prior to processing for the purpose of adding topographical features such as metallized and insulating areas) or a processed wafer (i.e., a wafer after it has been subjected to one or more processing steps to add topographical features to the wafer surface);
[0023] "Oxide Removal Rate" refers to the rate or speed, generally expressed in angstroms per minute (A/min.), at which a dielectric oxide material may be removed from a wafer during a CMP process.
[0024] "Selectivity Ratio" refers to the ratio of the rate at which a first material (e.g., a dielectric oxide material such as silicon dioxide) can be removed, to the rate at which a second material (e.g., a barrier material such as silicon nitride) can be removed from a wafer during a CMP process.
[0025] In some embodiments, the disclosure provides a composition, system and method in which a working liquid substantially free of abrasive particles and including proline and a fluorochemical surfactant is used in a fixed abrasive CMP process. In some embodiments, the composition is a working liquid used with a fixed abrasive article in a fixed abrasive CMP system. The fixed abrasive CMP composition, system and method may be useful for shallow trench isolation (STI) of a patterned wafer, in which it may be desirable to use a selective chemistry in the working liquid to obtain "stop on nitride" oxide removal selectivity, as described in U.S. Pat. No. 6,997,785 to Rueb et al.
[0026] In STI, a wafer having a base and a plurality of shallow trench isolation structures is provided. The shallow trench isolation structures are typically formed by depositing and patterning a silicon nitride layer to form a mask on the surface of the wafer, and then forming trenches using any of the etching processes known to those skilled in the art. A dielectric layer may be deposited over the surface of the shallow trench isolation structures and into the spaces between the shallow trench isolation structures. A variety of dielectric materials may be used, such as, for example, silicon dioxide. As used in the context of the present disclosure, "silicon dioxide" refers to silicon dioxide as well as doped variants of silicon dioxide, such as, for example, fluorine, boron, and/or phosphorous doped silicon dioxide.
[0027] A portion of the dielectric layer is then removed using the CMP process of the present disclosure to form the desired pattern. The polished dielectric material and a nitride mask layer form a generally flat surface. The mask layer functions as a stop layer for the CMP process that protects the shallow trench isolation structure from exposure to the CMP processing. The mask layer is typically produced using a nitride material, for example, silicon nitride. It has been demonstrated that use of a fixed abrasive article and working liquid according to the present disclosure may provide reduced dishing of a wafer in a fixed abrasive CMP process as compared to a slurry-based CMP process. [0028] CMP machines useful with the processes of the present disclosure are commercially available and known to those skilled in the art. Exemplary CMP machines are commercially available from Applied Materials, Santa Clara, California, for example machines marketed as "APPLIED MATERIALS MIRRA™ CMP POLISHER," and "REFLEXION WEB™." A CMP machine useful for the process of the present disclosure may be fitted with a fixed abrasive polishing article as reported, for example, by Bruxvoort et al. in U.S. Patent No. 5,958,794 and by Kaisaki et al. in U.S. Patent No. 6,194,317.
[0029] The abrasive article may be used to polish the exposed surface of the wafer in the presence of a liquid medium (i.e., working liquid). Abrasive articles useful for the method of the present disclosure typically have a diameter in the range of 250 to 1,000 millimeters. The abrasive article may rotate at a speed of at least 5 revolutions per minute (rpm), more preferably 10 rpm. The abrasive article preferably rotates at a speed of at most 10,000 rpm, more preferably at a speed of at most 1,000 rpm, more preferably still at a speed of at most 250 rpm, most preferably at a speed of at most 60 rpm. In some embodiments, the abrasive article and the wafer may be rotated in the same direction. In other embodiments, the wafer and the abrasive article may be rotated in opposite directions.
[0030] The abrasive article can also be provided in other configurations, including, for example, sheets, rolls, or belts. In these configurations, the abrasive article can, for example, be fed linearly into the CMP process during polishing operations. [0031] The abrasive article can be selected to be long lasting, e.g., the abrasive article can be selected, at least in part, to polish a minimum number of different wafers. The abrasive article can also be selected based on Oxide Removal Rate. Additionally, the abrasive article can be selected based on its capability of yielding a semiconductor wafer having a desired flatness, surface finish, and minimal dishing. The materials, desired texture, and process used to make the abrasive article can all influence whether or not these criteria are met.
[0032] Abrasive articles useful in the CMP process of the present disclosure include those reported by Bruxvoort et al. in U.S. Patent No. 5,958,794 and by Kaisaki et al. in U.S. Patent No. 6,194,317. In certain embodiments, a three-dimensional, textured, fixed abrasive article is used. In some embodiments, the abrasive article comprises ceria abrasive particles. In yet further embodiments, the abrasive articles comprise precisely shaped abrasive composites.
[0033] Exemplary abrasive articles having precisely shaped abrasive composites comprising ceria particles that are useful for the processes of the present disclosure include those commercially available from 3M Company, St. Paul, MN, and marketed as "3M SLURRYFREE CMP FIXED ABRASIVE 3152" and "3M SLURRYFREE CMP FIXED ABRASIVE 3154". A presently preferred abrasive article having precisely shaped abrasive composites is a fixed abrasive pad sold under the product designation SWR542-125/10 by 3M Company, St. Paul, MN.
[0034] During CMP processing using the processes of the present disclosure, a working liquid is present at the interface between the abrasive article and the wafer. Typically, during planarization, there is a consistent flow of the working liquid to the interface between the abrasive article and the wafer. The liquid flow rate typically is at least about 10 milliliters per minute (ml/min.), more preferably at least 25 ml/min. The liquid flow rate typically is at most about 10,000 ml/min., more preferably at most about 500 ml/min., most preferably at most about 250 ml/min. [0035] The working liquid of the present disclosure comprises pro line and a fluorochemical surfactant, and is substantially free of abrasive particles. In some embodiments, L-proline may be used with a fluorochemical surfactant. The working liquid may also comprise water, and additives such as complexing agents, buffers, dispersing agents, and the like.
[0036] In some embodiments, the working liquid is adjusted to a pH of at least about 9. In other embodiments, the working liquid is adjusted to a pH of at least about 10. In certain presently preferred embodiments, the working liquid pH is adjusted to about 10.5. In certain of these embodiments, the working liquid is adjusted to a pH that is no greater than about 11. In some embodiments, the working liquid is adjusted to a pH that is no greater than about 10.5. In some embodiments, the working liquid is adjusted to a pH in the range of about 9 to about 11. In some embodiments, the working liquid is adjusted to a pH in the range of about 10 to about 10.5. The pH can be adjusted using methods and solutions known to those skilled in the art, including, for example, the addition of KOH or NH4OH. In some embodiments, the working liquid is buffered. In some embodiments, the working liquid may be buffered using other amino acids, for example, histidine, glycine, lysine, arginine, and the like.
[0037] In some embodiments, the working liquid comprises at least 0.1% pro line by weight. In other embodiments, the working liquid comprises at least 0.5% pro line by weight. In yet further embodiments, the working liquid comprises at least 1% pro line by weight. In some embodiments, the working liquid comprises about 2.5% proline by weight. In certain of these embodiments, the working liquid comprises at most 8% proline by weight. In some embodiments, the working liquid comprises at most 5% proline by weight. In yet further embodiments, the working liquid comprises at most 3% proline by weight.
[0038] The fluorochemical surfactant can be virtually any highly or fully fluorinated chemical compound that exhibits surface active properties. In some embodiments, the fluorochemical surfactant is a nonionic surfactant. In certain presently preferred embodiments, the fluorochemical surfactant has the formula RiCH2CH2O(CH2CH2O)xH, where Ri is F(CF2CF2)3_g and x is an integer > 1. Suitable fluorochemical surfactants include the Zonyl™ surfactants (manufactured by E.I. DuPont de Nemours Corp., Wilmington, DE) and the Fluorad™ surfactants (manufactured by 3M Company, St. Paul, MN). Preferred fluorochemical surfactants include Zonyl™ FSN; and 3M L 19909, 3M L 19330, and 3M Novec™ 4432 surfactants.
[0039] The concentration of a fluorochemical surfactant ("concentration") useful in the processes of the present disclosure can be selected to control dielectric (e.g. silicon dioxide) removal rate, dielectric to barrier layer (e.g. silicon dioxide to silicon nitride) selectivity, or a combination thereof. In some exemplary embodiments, the fluorochemical surfactant concentration is selected to be greater than 0.005%. In certain exemplary embodiments, the fluorochemical surfactant concentration is selected to be at least 0.01% of the working liquid on a weight basis. In other exemplary embodiments, a fluorochemical surfactant concentration of at least 0.02% by weight may be used. In further exemplary embodiments, a fluorochemical surfactant concentration of at least 0.2% by weight may be used. In additional exemplary embodiments, a fluorochemical surfactant concentration of at least 0.6% by weight may be used.
[0040] The maximum preferred concentration of the fluorochemical surfactant may be readily determined, for example, by the onset of friction induced audible "squeeling" during CMP processing, which may occur at concentrations greater than about 0.2% by weight with some fluorochemical surfactants. Alternatively, the maximum preferred concentration may be determined, for example, by visual observation of undesirable slippage of the wafer during removal of the wafer from the fixed abrasive pad surface (i.e. "de-chucking"), which may occur at concentrations greater than about 0.5% by weight with some fluorochemical surfactants. In certain exemplary embodiments, a fluorochemical surfactant concentration of less than 1.0% may be used. In other exemplary embodiments, a fluorochemical surfactant concentration of no more than 0.6% may be used. In further exemplary embodiments, the fluorochemical surfactant concentration is no more than 0.2%, and in particular exemplary embodiments, no more than 0.02% on a weight basis of the working liquid.
[0041] Processing parameters for the present disclosure can be selected to achieve desired removal rates and/or selectivity by the skilled artisan guided by this disclosure. For example, the concentrations of pro line and the fluorochemical surfactant, and the pH of the working liquid can be adjusted to control the removal rate of the dielectric material. In some embodiments, the concentration of the fluorochemical surfactant is adjusted to control the removal rate of the dielectric material. In order to determine the proper concentration of fluorochemical surfactant necessary to achieve the desired rate of removal or selectivity, a series of at least two working liquids having differing concentrations can be tested to determine the optimal concentration. Likewise, in order to determine the working liquid pH for the desired rate of removal or selectivity, a series of at least two working liquids having differing pH levels can be tested to determine the optimal pH level.
[0042] The removal rate of dielectric material (e.g. metal oxide such as silicon dioxide) may be, in some embodiments, an important characteristic of the fixed abrasive CMP process affected by the composition of the working fluid, particularly the concentration of the fluorochemical surfactant. In some embodiments, the working liquid is selected to have an Oxide Removal Rate of at least about 500 angstroms per minute (A/min.). In other embodiments, the working liquid is selected to have an Oxide Removal Rate of at least 1000 A/min. In further embodiments, the working liquid is selected to have an Oxide Removal Rate of at least 2,000 A/min. In additional embodiments, the working liquid is selected to have an Oxide Removal Rate of at least 2,500 A/min. In further embodiments, the working liquid is selected to have an Oxide Removal Rate of at least about 3,000 A/min.
[0043] The Selectivity Ratio, that is, the ratio of the Oxide Removal Rate to the nitride removal rate, may be taken as a measure of stop on nitride selectivity useful in CMP and particularly useful in shallow trench isolation. In some embodiments, the working liquid is selected to have a dielectric (e.g. oxide) to barrier layer (e.g., nitride) Selectivity Ratio of at least about 5. In other embodiments, the working liquid is selected to have a dielectric to barrier layer Selectivity Ratio of at least about 20. In certain embodiments, the working liquid is selected to have a dielectric to barrier layer Selectivity Ratio of at least about 50. In additional embodiments, the working liquid is selected to have a dielectric to barrier layer Selectivity Ratio of at least about 100. In further embodiments, the working liquid is selected to have a dielectric to barrier layer Selectivity Ratio of at least about 250.
[0044] In further embodiments, the composition of the working fluid is selected, at least in part, to increase the Oxide Removal Rate and the Selectivity Ratio. In one embodiment of the present disclosure, the use of a fluorochemical surfactant with proline under alkaline pH conditions increases the Oxide Removal Rate while retaining the nitride removal rate in Shallow Trench Isolation (STI), thereby increasing the oxide over nitride Selectivity Ratio associated with the use of pro line in the working fluid of a fixed abrasive CMP process for STI. In certain embodiments, the compositions of the present disclosure may produce an Oxide Removal Rate of at least about 500 A/min. and an oxide over nitride Selectivity Ratio of at least 5. In some exemplary embodiments, the compositions of the present disclosure may produce an Oxide Removal Rate of at least 700 A/min., and a Selectivity Ratio of at least 30. In other exemplary embodiments, the compositions of the present disclosure may produce an Oxide Removal Rate of at least 1000 A/min. and an oxide over nitride Selectivity Ratio of at least 50. In further embodiments, the compositions of the present disclosure can be modified to produce an Oxide Removal Rate of at least 2000 A/min. and an oxide over nitride Selectivity Ratio of at least 100. In additional embodiments, the compositions of the present disclosure can be modified to produce an Oxide Removal Rate of at least about 3000 A/min. and an oxide over nitride Selectivity Ratio of at least 250.
[0045] Advantages and other embodiments of this invention are further illustrated by the following examples, but the particular materials and amounts thereof recited in these examples, as well as other conditions and details, should not be construed to unduly limit this invention. For example, composition of the working liquid and the cation selection and concentration can be varied. All parts and percentages are by weight unless otherwise indicated.
Examples
[0046] The material designations shown in TABLE 1 are used throughout the examples. All compositional percentages in the following Examples are expressed as a weight percent of the working liquid.
Table 1: Fluorochemical Surfactants Used in the Examples
Figure imgf000013_0001
Comparative Example A
The following polish tests were performed on a Mirra tool (from Applied Materials, Inc. of Santa Clara, CA) using an SWR542-125/10 three-dimensional, textured, fixed abrasive pad (from 3M Company, St. Paul, MN). Prior to each eleven wafer test sequence described, the previously used fixed abrasive pad was prepared by conditioning the surface for 36 seconds with a Morgan CMP-20000TS conditioner (Morgan Advanced Ceramics, Inc., Hayward, CA) at a down force of 4 kg (9 lbs) operating at 50 revolutions per minute (rpm) and five sweeps per minute in deionized water.
[0047] Following conditioning, ten 200 mm blanket tetraethylsilicate (TEOS) blanket wafers were polished for 60 seconds at 20.7 kPa (3 psi) and 30 rpm, using a working liquid comprising a 2.5% solution of L-proline in deionized water which had been adjusted to pH 10.5 using potassium hydroxide. Polishing solutions were supplied at 200 mL/min. The working liquid to be tested was then used to polish ten 200 mm TEOS blanket wafers to establish silicon Oxide Removal Rate followed by one previously cleared 0.17 micron DRAM wafer to establish silicon nitride removal rate. The removal rates were obtained by measuring the thickness of the respective materials before and after polishing using an Optiprobe 2600 (Therma-Wave, Fremont, CA). The polishing results using 2.5% L-proline at pH 10.5 without a fluorochemical surfactant in a fixed abrasive CMP process are presented in Table 2.
Table 2: Data from Comparative Example A
Figure imgf000014_0001
Example 1
[0048] A working liquid containing 0.02% Zonyl FSN and 2.5% L-proline at pH 10.5 produced an average Oxide Removal Rate of 1006.90 A/min., a nitride removal rate of
12.0 A/min., and a Selectivity Ratio of 83.9.
Example 2
[0049] A working liquid containing 0.2% Zonyl FSN and 2.5% L-proline at pH 10.5 produced an average Oxide Removal Rate of 1250.80 A/min., a nitride removal rate of
5.0 A/min., and a Selectivity Ratio of 250.16.
Example 3
[0050] A working liquid containing 0.02% Zonyl FSN and 2.5% L-proline at pH 10.5 produced an average Oxide Removal Rate of 801.20 A/min., a nitride removal rate of
11.0 A/min., and a Selectivity Ratio of 72.83. Example 4
[0051] A working liquid containing 0.2% Zonyl FSN and 2.5% L-proline at pH 10.5 produced an average Oxide Removal Rate of 1050.38 A/min., a nitride removal rate of 29.0 A/min., and a Selectivity Ratio of 38.11. Comparative Example B
[0052] A series of seven sets often 200 mm TEOS blanket wafers and one previously cleared 0.17 micron dynamic random access memory (DRAM) wafer were polished using a working liquid containing 2.5% L-proline at pH 10.5. The Oxide Removal Rate was 477.42 ± 104.01 A/min., the silicon nitride removal rate was 21.43 ±6.08 A/min., and the Selectivity Ratio was 23.76 ± 7.43.
[0053] Additional tests were performed as follows. A new SWR542-125/10 three- dimensional, textured, fixed abrasive pad was initially conditioned for 300 seconds with a Morgan CMP-20000TS conditioner at a down force of 4 kg (9 lbs) operating at 50 rpm and 12 sweeps per minute in deionized water. Following conditioning, twenty five 200 mm blanket TEOS wafers were polished for 60 seconds at 20.7 kPa (3 psi) and 30 rpm, using a working liquid comprising a 2.5% solution of L-proline in deionized water which had been adjusted to pH 10.5 using potassium hydroxide. Prior to each 6 wafer test sequence, the pad was prepared by conditioning the surface for 5 minutes with a Morgan CMP-20000TS conditioner at a down force of 4 kg (9 lbs) operating at 50 rpm and 12 sweeps per minute in deionized water.
[0054] Following conditioning, five 200 mm blanket TEOS wafers were polished for 60 seconds at 20.7 kPa (3 pounds per square inch, psi) pressure and 30 rpm, using a working liquid comprising a 2.5% solution of L-proline in deionized water which had been adjusted to pH 10.5 using potassium hydroxide. Polishing solutions were supplied at 200 mL/min. The working liquid to be tested was then used to polish three 200 mm TEOS blanket wafers to establish the Oxide Removal Rate, followed by one previously cleared 0.17 micron DRAM wafer to establish silicon nitride removal rate. The removal rates were obtained by measuring the thickness of the respective materials before and after polishing using an Optiprobe 2600. Example 5
[0055] A working liquid containing 0.2% 3M L 19330 fluorochemical surfactant and
2.5% L-proline at pH 10.5 produced an average Oxide Removal Rate of 513.67 A/min., a nitride removal rate of 2.0 A/min., and a Selectivity Ratio of 256.83.
Comparative Example C
[0056] This Comparative Example illustrates use of a fluorochemical surfactant below an amount effective to obtain an Oxide Removal Rate of 500 A/min. A working liquid containing 0.005% 3M L 19909 and 2.5% L-proline at pH 11.0 produced an average Oxide
Removal Rate of 260.33 A/min., a nitride removal rate of 24.0 A/min., and a Selectivity
Ratio of 10.84.
Example 6
[0057] A working liquid containing 0.02% 3M L 19909 and 2.5% L-proline at pH 11.0 produced an average Oxide Removal Rate of 705.33 A/min., a nitride removal rate of
8.0 A/min., and a Selectivity Ratio of 88.16.
Example 7
[0058] A working liquid containing 0.2% 3M L19909 and 2.5% L-proline at pH 11.0 produced an average Oxide Removal Rate of 547.00 A/min., a nitride removal rate of
9.0 A/min., and a Selectivity Ratio of 60.78.
[0059] The results for Examples 1-8 and Comparative Example B and C are summarized in Table 3.
Table 3: Data from Examples 1-8 and Comparative Examples B and C
Figure imgf000016_0001
Comparative Example D
[0060] A series of three sets of three 200 mm TEOS blanket wafers were polished using a working liquid containing 2.5% L-proline at pH 10.5. The Oxide Removal Rate was 475.55 A/min.
Example 9
[0061] Three fluorochemical surfactants (3M L 19909, 3M FC4432, and DuPont Zonyl
FSN, described in Table 1) were individually evaluated at varying concentration in working liquids with 2.5% L-proline at pH 10.5 and a SWR542-125/10 fixed abrasive pad
(available from 3M Company, St. Paul, MN) in a MIRRA CMP POLISHER (available from Applied Materials, Santa Clara, California). A used SWR542 pad was placed in a
Mirra carrier. This pad was first broken-in with 5 minutes of conditioning at 4 kg
(9 pounds) of feree, 50 rpm, and 12 sweeps per minute in deionized water. Ten blanket
TEOS wafers were run for 60 seconds at 20.7 kPa (3 psi) pressure and 30 rpm in a working liquid of 2.5% L-proline at a pH of 10.5. Then a series of working liquids were run in the following manner:
1. A 5 minute conditioning cycle (as described above) was run;
2. Five blanket TEOS wafers were run as described above in the L-proline chemistry;
3. Five blanket TEOS wafers were run as described above in the L-proline chemistry with a fluorochemical surfactant added at the concentrations indicated in Table 4.
[0062] As shown in Table 4, at the 0.02% surfactant concentrations, the 3M L 19909 and provided polishing rates that were at least as high as the Zonyl FSN, approximately double the control without fluorochemical surfactant. At the 0.2% concentrations, the Oxide Removal Rate was even higher, but more friction was experienced with the FC4432 and L 19909 surfactants. The friction produced a loud high-pitched "squealing" noise during polishing. Additionally, several wafers slipped during de-chuck (the removal of the wafer from the pad surface) at the 0.6% concentrations of the 3M FC4432 and 3M L 19909. The Zonyl FSN did not exhibit the friction-induced squealing, nor the wafer slippage during dechuck. Table 4: Data from Example 9 and Comparative Example C
Figure imgf000018_0001
[0063] It is to be understood that even in the numerous characteristics and advantages of the present disclosure set forth in the above disclosure, together with details of the structure and function of the invention, the disclosure is illustrative only. Changes can be made to detail, especially in matters of the surfactant concentration in the working liquid and methods of use within the principles of the invention to the full extent indicated by the meaning of the terms in which the appended claims are expressed and the equivalents of those structures and methods.
[0064] It should also be apparent to those skilled in the art from the above description that various modifications can be made without departing from the scope and principles of this disclosure, and it should be understood that this disclosure may be not to be unduly limited to the illustrative embodiments set forth hereinabove. Various embodiments of the disclosure have been described. These and other embodiments are within the scope of the following claims.

Claims

We claim:
1. A working liquid for fixed abrasive chemical mechanical planarization comprising: proline; and a fluorochemical surfactant, wherein the working liquid is substantially free of abrasive particles, and wherein the proline and the fluorochemical surfactant are each present in an amount effective to obtain an Oxide Removal Rate of at least 500 angstroms/minute (A/min) and a Selectivity Ratio of at least 5 when the working liquid is used in chemical mechanical planarization of a wafer having a first region comprising silicon dioxide and a second region comprising silicon nitride.
2. The working liquid of claim 1, wherein the Oxide Removal Rate is at least 700 A/min.
3. The working liquid of claim 1, wherein the Selectivity Ratio is at least 30.
4. The working liquid of claim 1 , wherein the working liquid exhibits a pH from 9 to 11.
5. The working liquid of claim 1, wherein the working liquid exhibits a pH from 10 to 10.5.
6. The working liquid of claim 1 wherein the fluorochemical surfactant is a nonionic surfactant.
7. The working liquid of claim 1, wherein the fluorochemical surfactant has the formula RiCH2CH2O(CH2CH2O)xH, where Ri is F(CF2CF2)3_8 and x is an integer > 1.
8. The working liquid of claim 1 wherein the concentration of the fluorochemical surfactant is greater than 0.005% and less than 1.0% on a weight basis.
9. The working liquid of claim 1 wherein the concentration of the fluorochemical surfactant is from 0.2% to 0.6% on a weight basis.
10. The working liquid of claim 1, wherein the concentration of pro line is from 1.0% to 4% on a weight basis.
11. The working liquid of claim 1 , wherein the concentration of pro line is from 2.0% to 3% on a weight basis.
12. A wafer planarization system comprising: a three-dimensional, textured, fixed abrasive article comprising a plurality of abrasive particles and a binder; and a working liquid comprising proline and a fluorochemical surfactant, wherein the working liquid exhibits a pH from 9 to 11 and is substantially free of abrasive particles.
13. The wafer planarization system of claim 12 wherein said abrasive article comprises precisely shaped abrasive composites.
14. A method of chemical mechanical planarization of a wafer comprising: providing a wafer having a first surface region comprising a dielectric oxide, and a second surface region comprising a barrier nitride; contacting the first and second surface regions with a three-dimensional, textured, fixed abrasive article comprising a plurality of abrasive particles and a binder; and relatively moving the wafer and the fixed abrasive article in the presence of a liquid medium comprising proline and a fluorochemical surfactant.
15. The method of claim 14, wherein the liquid medium exhibits a pH from 9 to 11.
16. The method of claim 14, wherein the fluorochemical surfactant has the formula RiCH2CH2O(CH2CH2O)xH, where Ri is F(CF2CF2)3-8 and x is an integer > 1.
17. The method of claim 14, wherein the concentration of the fluorochemical surfactant in the liquid medium is greater than 0.005% and less than 1.0% on a weight basis.
18. The method of claim 14, wherein the concentration of pro line in the liquid medium is from 1.0% to 5% on a weight basis.
19. The method of claim 14, wherein the Oxide Removal Rate is at least 700 A/min.
20. The method of claim 19, wherein the Selectivity Ratio is at least 5.
PCT/US2007/086955 2006-12-20 2007-12-10 Chemical mechanical planarization composition, system, and method of use WO2008079651A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP07869084A EP2109648B1 (en) 2006-12-20 2007-12-10 Chemical mechanical planarization composition, system, and method of use
JP2009543056A JP5363338B2 (en) 2006-12-20 2007-12-10 Chemical mechanical planarization composition, system, and method of use
CN2007800477343A CN101568613B (en) 2006-12-20 2007-12-10 Chemical mechanical planarization composition, system, and method of use
KR1020097012681A KR101432852B1 (en) 2006-12-20 2007-12-10 Chemical mechanical planarization composition, system, and method of use

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/613,646 2006-12-20
US11/613,646 US8591764B2 (en) 2006-12-20 2006-12-20 Chemical mechanical planarization composition, system, and method of use

Publications (1)

Publication Number Publication Date
WO2008079651A1 true WO2008079651A1 (en) 2008-07-03

Family

ID=39543526

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/086955 WO2008079651A1 (en) 2006-12-20 2007-12-10 Chemical mechanical planarization composition, system, and method of use

Country Status (7)

Country Link
US (1) US8591764B2 (en)
EP (1) EP2109648B1 (en)
JP (1) JP5363338B2 (en)
KR (1) KR101432852B1 (en)
CN (1) CN101568613B (en)
TW (1) TWI437084B (en)
WO (1) WO2008079651A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2186121A2 (en) * 2007-08-15 2010-05-19 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
US11846580B2 (en) 2016-12-22 2023-12-19 Illumina, Inc. Flow cell package and method for making the same

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080261402A1 (en) * 2007-04-17 2008-10-23 United Microelectronics Corp. Method of removing insulating layer on substrate
US20090023362A1 (en) * 2007-07-17 2009-01-22 Tzu-Shin Chen Retaining ring for chemical mechanical polishing, its operational method and application system
DE102009025243B4 (en) 2009-06-17 2011-11-17 Siltronic Ag Method for producing and method of processing a semiconductor wafer made of silicon
CN103718064B (en) * 2011-07-22 2015-12-09 萨特隆股份公司 Comprise the optical article that has the surfactants based provisional antifogging coating of the permanance of improvement
CN104822495A (en) * 2012-09-21 2015-08-05 3M创新有限公司 Incorporating additives into fixed abrasive webs for improved CMP performance
TWI530557B (en) * 2014-05-29 2016-04-21 卡博特微電子公司 Cmp compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity
CN108250975A (en) * 2016-12-28 2018-07-06 安集微电子科技（上海）股份有限公司 A kind of chemical mechanical polishing liquid and its application
TW202035361A (en) * 2018-12-12 2020-10-01 美商3M新設資產公司 Fluorinated amine oxide surfactants

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544892B2 (en) * 1999-12-08 2003-04-08 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US6997785B1 (en) * 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114437A (en) 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
US5152917B1 (en) 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
JPH05112775A (en) 1991-10-22 1993-05-07 Sumitomo Chem Co Ltd Grinding composition for metallic material
US5690539A (en) * 1995-08-07 1997-11-25 Cal-West Equipment Company Inc. Method of abarding using surface abrasion compositions
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5738800A (en) * 1996-09-27 1998-04-14 Rodel, Inc. Composition and method for polishing a composite of silica and silicon nitride
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6194317B1 (en) 1998-04-30 2001-02-27 3M Innovative Properties Company Method of planarizing the upper surface of a semiconductor wafer
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6121143A (en) 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
CN1204602C (en) 1998-08-31 2005-06-01 日立化成工业株式会社 Abrasive liquid for metal and method for polishing
US6468910B1 (en) 1999-12-08 2002-10-22 Ramanathan Srinivasan Slurry for chemical mechanical polishing silicon dioxide
JP3869608B2 (en) 2000-01-25 2007-01-17 Ｎｅｃエレクトロニクス株式会社 Anticorrosive
KR20020086949A (en) * 2000-04-11 2002-11-20 캐보트 마이크로일렉트로닉스 코포레이션 System for the Preferential Removal of Silicon Oxide
US6733553B2 (en) 2000-04-13 2004-05-11 Showa Denko Kabushiki Kaisha Abrasive composition for polishing semiconductor device and method for producing semiconductor device using the same
US6964923B1 (en) 2000-05-24 2005-11-15 International Business Machines Corporation Selective polishing with slurries containing polyelectrolytes
JP2002057130A (en) * 2000-08-14 2002-02-22 Three M Innovative Properties Co Polishing pad for cmp
US20020092423A1 (en) * 2000-09-05 2002-07-18 Gillingham Gary R. Methods for filtering air for a gas turbine system
US6477926B1 (en) * 2000-09-15 2002-11-12 Ppg Industries Ohio, Inc. Polishing pad
US6702954B1 (en) 2000-10-19 2004-03-09 Ferro Corporation Chemical-mechanical polishing slurry and method
KR100464429B1 (en) 2002-08-16 2005-01-03 삼성전자주식회사 Chemical mechanical polishing slurry and chemical mechanical polishing method using the same
TWI314950B (en) * 2001-10-31 2009-09-21 Hitachi Chemical Co Ltd Polishing slurry and polishing method
US6841480B2 (en) 2002-02-04 2005-01-11 Infineon Technologies Ag Polyelectrolyte dispensing polishing pad, production thereof and method of polishing a substrate
US20030176151A1 (en) 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
US6866793B2 (en) * 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
JP2004241675A (en) * 2003-02-07 2004-08-26 Renesas Technology Corp Method for manufacturing electronic device having wiring connection structure
US7160178B2 (en) 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
US20050028450A1 (en) 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
US7427361B2 (en) 2003-10-10 2008-09-23 Dupont Air Products Nanomaterials Llc Particulate or particle-bound chelating agents
US7214623B2 (en) 2003-10-13 2007-05-08 International Business Machines Corporation Planarization system and method using a carbonate containing fluid
US7314578B2 (en) 2003-12-12 2008-01-01 Samsung Electronics Co., Ltd. Slurry compositions and CMP methods using the same
JP2005244123A (en) 2004-02-27 2005-09-08 Fujimi Inc Polishing composition
US20060000808A1 (en) 2004-07-01 2006-01-05 Fuji Photo Film Co., Ltd. Polishing solution of metal and chemical mechanical polishing method
JP2006100538A (en) 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd Polishing composition and polishing method using the same
JP2006179845A (en) 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd Polishing solution for metal, and polishing method
JP2006295152A (en) * 2005-03-17 2006-10-26 Fuji Photo Film Co Ltd Polishing solution for metal and polishing method
US7368388B2 (en) * 2005-04-15 2008-05-06 Small Robert J Cerium oxide abrasives for chemical mechanical polishing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6544892B2 (en) * 1999-12-08 2003-04-08 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US6997785B1 (en) * 2004-12-23 2006-02-14 3M Innovative Properties Company Wafer planarization composition and method of use

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
EP2186121A2 (en) * 2007-08-15 2010-05-19 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
EP2186121A4 (en) * 2007-08-15 2011-10-12 3M Innovative Properties Co Compositions and methods for modifying a surface suited for semiconductor fabrication
US11846580B2 (en) 2016-12-22 2023-12-19 Illumina, Inc. Flow cell package and method for making the same

Also Published As

Publication number Publication date
CN101568613A (en) 2009-10-28
JP5363338B2 (en) 2013-12-11
US20080153392A1 (en) 2008-06-26
TWI437084B (en) 2014-05-11
JP2010514222A (en) 2010-04-30
EP2109648A4 (en) 2010-09-08
KR101432852B1 (en) 2014-08-26
US8591764B2 (en) 2013-11-26
CN101568613B (en) 2013-02-06
EP2109648B1 (en) 2012-08-01
EP2109648A1 (en) 2009-10-21
KR20090087927A (en) 2009-08-18
TW200838998A (en) 2008-10-01

Similar Documents

Publication Publication Date Title
US8591764B2 (en) Chemical mechanical planarization composition, system, and method of use
EP1061111B1 (en) Abrasive composition for polishing semiconductor device and process for producing semiconductor device with the same
KR101718788B1 (en) Chemical Mechanical Polishing Composition and Methods Relating Thereto
US7449124B2 (en) Method of polishing a wafer
KR101672811B1 (en) Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride
TWI508154B (en) Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
US20100243471A1 (en) Composition, method and process for polishing a wafer
CN111718657B (en) Chemical mechanical polishing composition and method for inhibiting amorphous silicon removal rate
JP6423214B2 (en) Low defect chemical mechanical polishing composition
KR101672809B1 (en) Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
JP2020186380A (en) Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in acid environment
US7198560B2 (en) Wafer planarization composition and method of use
KR102005254B1 (en) A method of polishing a substrate
TWI496878B (en) Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
JP4063490B2 (en) Polishing liquid composition
CN1784771A (en) Slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect and method for planarizing surface of semiconductor device using same
CN110964440A (en) Chemical mechanical polishing composition and method for polishing silicon dioxide over silicon nitride

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780047734.3

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07869084

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2009543056

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020097012681

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2007869084

Country of ref document: EP