CN104822495A - Incorporating additives into fixed abrasive webs for improved CMP performance - Google Patents

Incorporating additives into fixed abrasive webs for improved CMP performance Download PDF

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Publication number
CN104822495A
CN104822495A CN201380049086.0A CN201380049086A CN104822495A CN 104822495 A CN104822495 A CN 104822495A CN 201380049086 A CN201380049086 A CN 201380049086A CN 104822495 A CN104822495 A CN 104822495A
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China
Prior art keywords
structured abrasive
active agent
abrasive
surface active
weight
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CN201380049086.0A
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Chinese (zh)
Inventor
J·Y·钱
W·D·约瑟夫
S·C·罗珀
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
    • B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
    • B24D3/344—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent the bonding agent being organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A structured abrasive article is provided that has a backing having first and second opposed major surfaces and a structured abrasive layer disposed on and secured to the first major surface of the backing. The structured abrasive layer includes a polymeric binder, abrasive particles dispersed in the binder and an additive dispersed in the binder. The additive provides improved chemical mechanical planarization (CMP) polish performance, including high oxide/nitride selectively, high removal rates, lower nitride loss and improved with-in- wafer non-uniformity (WIWNU).

Description

Additive is introduced to improve CMP performance in fixed-abrasive web
the cross reference of related application
This application claims the rights and interests of the U.S. Provisional Application 61/703,815 submitted on September 21st, 2012, the disclosure of this provisional application is incorporated herein by reference in full.
Technical field
The present invention relates generally to fixing (fixed) abrasive material web of chemical mechanical planarization (CMP) polishing performance with improvement.Especially, the present invention relates to the fixed-abrasive web containing the additive being improved CMP polishing performance.
Background technology
Abrasive product usually for accurate grinding purposes, as the polishing etc. of the refine of semiconductor wafer polishing, micro machine (MEMS) device fabrication, hard disk drive base, optical fiber and connector.Such as, in ic manufacturing process, semiconductor wafer stands many procedure of processings usually, comprises the deposition of metal and dielectric layer, the patterning of layer, and etching.In each procedure of processing, the exposed surface or preferably may repairing or refine described wafer prepares against it for follow-up manufacture or preparation process.Described surfacing technique is generally used for the conductor (such as, metal, semiconductor and/or dielectric material) repairing deposition.Described surfacing technique be also often used in having conductive material, dielectric material or combination exposed region wafer on form smooth outer exposed surface.
The fixing abrasive product process wafer surface of a kind of method of the exposed surface of finishing or fine structure wafer.In use, usually under the existence of working fluid, usually make described fixing abrasive product with the material layer be suitable on finishing wafer and moving contact semiconductor wafer surface that is smooth, uniform wafer surface is provided.
Fixing abrasive product usually has bonded dose and is bonded together and the abrasive material being fixed to the abrasive grain on backing.In the fixed abrasive articles of a type, abrasive material is by being called that the discrete bulge-structure element (such as, post, ridge, pyramid or truncated pyramid) of " shaped abrasive composite " forms.Such fixed abrasive articles represents (hereinafter will use rear a kind of term) with different terms " textured, fixing abrasive product " or " structured abrasive article " in the art.Abrasive product can comprise and is dispersed at least one nonionic polyether surfactant in crosslinked polymer binder and abrasive grain, as at U.S.S.N.12/560, disclosed in 797 (people such as Woo).
Summary of the invention
In one embodiment, the present invention relates to a kind of structurized abrasive product, it comprises backing and structured abrasive layer, and backing has the first opposed first type surface and the second opposed first type surface, and the first first type surface that structured abrasive layer is arranged on backing is fixed to the first first type surface of backing.Structured abrasive layer comprises polymeric binder, disperses abrasive grain in a binder and disperses the first additive in a binder.First additive can be multiple tooth acid complexing agent, and wherein said multiple tooth acid complexing agent comprises amino acid, by amino acids formed dipeptides and their combination.Structured abrasive layer can comprise Second addition.Second addition comprises nonionic surface active agent, silicon surface active agent, fluorine-containing surfactant, water-soluble polymer and their combination.
Additive provides chemical mechanical planarization (CMP) polishing performance of improvement, comprise high oxide/nitride selective, high remove speed, lower nitride loss and improve wafer in unevenness (WIWNU).
In another embodiment, the present invention relates to a kind of method of grinding work-piece.Described method comprise make structurized abrasive product at least one in workpiece or structured abrasive layer is moved with the surface of grinding work-piece at least partially with the surface contact of workpiece relative to another one at least partially.Structurized abrasive product comprises backing and structured abrasive layer, and backing has the first opposed first type surface and the second opposed first type surface, and structured abrasive layer to be arranged on described first first type surface and to be fixed to described first first type surface.Structured abrasive layer comprises polymeric binder, disperses abrasive grain in a binder and disperses the first additive in a binder.First additive can be multiple tooth acid complexing agent, and wherein said multiple tooth acid complexing agent comprises amino acid, by amino acids formed dipeptides and their combination.Structured abrasive layer can comprise Second addition.Second addition comprises nonionic surface active agent, silicon surface active agent, fluorine-containing surfactant, water-soluble polymer and their combination.Additive provides chemical mechanical planarization (CMP) polishing performance of improvement, comprises the WIWNU removing speed, the loss of lower nitride and improve that high oxide/nitride is selective, high.
Accompanying drawing explanation
Fig. 1 is the perspective view of exemplary structured abrasive product according to an embodiment of the invention.
Fig. 2 is the schematic side elevation of the illustrative methods according to grinding wafers surface of the present invention.
Detailed description of the invention
In the following description, with reference to the accompanying drawing of a part for this explanation of formation, and wherein some specific embodiments are shown by way of illustration.Should be appreciated that do not depart from the scope of the present invention or essence prerequisite under, it is contemplated that out other embodiments and implement.Therefore, following detailed description of the invention does not have restrictive, sense.
Except as otherwise noted, otherwise all numerals of the representation feature size, quantity and the physical characteristic that use in this description and claim be all construed as and all modified by term " about " in all cases.Therefore, unless indicated to the contrary, otherwise the numerical parameter listed in above-mentioned description and appended claims is all approximations, utilize instruction content disclosed herein to seek the desirable characteristics obtained according to those skilled in the art, these approximations can change.The number range represented by end value comprises all numerals (e.g., 1 to 5 comprise 1,1.5,2,2.75,3,3.80,4 and 5) within the scope of this and any scope within the scope of this.
Structured abrasive article of the present invention comprises additive in web self, allows the design con-trol of the increase of final products, improves the uniformity in downstream glossing and eliminates the needs of the refuse process to polishing or working fluid.Additive provides chemical mechanical planarization (CMP) polishing performance of improvement, comprise high oxide/nitride selective, high remove speed, lower nitride loss and improve wafer in unevenness (WIWNU).
Referring now to Fig. 1, structurized abrasive product 100 comprises at least backing 110.Abrasive material 120 to be arranged on backing 110 and to comprise multiple shaped abrasive compound 130.Shaped abrasive compound 130 comprises the abrasive grain (not shown) be dispersed in binding agent (not shown).
Backing 110 can be flexible, rigidity or mediate.Multiple back lining materials is applicable to this object, comprises flexible backings and more rigid backing.In certain embodiments, backing can be at least translucent film.Available semi-transparent film backing comprises the backing film being selected from polymer film, the polymer film processed and combination thereof.Exemplary translucent backing film comprises the film be made up of polyester (such as, PETG or polycaprolactone), copolyesters, Merlon, polyimides, polyamide, polypropylene, polyurethane, polyethylene, cellulosic polymer and blend thereof and composition.In certain embodiments, backing can comprise elastomer carbamate or foam.
The thickness of backing is usually in about 20 microns to about 1000 microns, the particularly about 50 microns scope to about 500 microns, more especially about 60 microns to about 200 microns.At least one surface of described backing can scribble described abrasive material.Usually, described backing has uniform thickness substantially.If the thickness of described backing is enough uneven, the more great fluctuation process of the wafer polishing uniformity can be there is in wafer planarization process.
Described abrasive material contains multiple shaped abrasive composite.Term used herein " shaped abrasive composite " refers to and multiplely comprises one of formed body of dispersion abrasive grain in a binder, and described formed body provides textured, three-dimensional abrasive material jointly.In certain embodiments, described shaped abrasive composite is " Accurate Shaping ".Term " abrasive composites of Accurate Shaping " refers to the abrasive composites of the anti-phase molded shape with the die cavity be essentially for the manufacture of it.Usually, the abrasive composites of Accurate Shaping is substantially free of the abrasive grain given prominence to outside described abrasive composites exposed surface before the described structured abrasive article of use.
The structured abrasive article provided can have the abrasive grain of high weight content in abrasive material 120.Such as, based on weighing scale, abrasive grain form abrasive material at least about 50 % by weight; And can form abrasive material at least about 60 % by weight, 70 % by weight, 75 % by weight, about 80 % by weight or about 90 % by weight.Usually, along with the percetage by weight of abrasive grain in shaped abrasive compound increases, can obtain and higher remove speed.
The example of suitable abrasive grain comprise aloxite (AI2O3), through heat treated aluminium oxide, white fused aluminum oxide, black silicon carbide, green silicon carbide, titanium diboride, boron carbide, silicon nitride, tungsten carbide, titanium carbide, diamond, cubic boron nitride, hexagonal boron nitride, garnet, aloxite (AI2O3)-zirconia, based on the derivative abrasive grain etc. of the collosol and gel of aluminium oxide.Alumina abrasive particle can comprise metal oxide modified agent.The example of the abrasive grain derived based on the collosol and gel of aluminium oxide is found in U.S. Patent number 4,314,827,4,623,364,4,744,802,4,770,671 and 4,881, in 951.Diamond and cubic boron nitride abrasive grains can be monocrystalline or polycrystalline.
Other example of suitable inorganic abradant particle comprises silica, iron oxide, chromium oxide, ceria, zirconia, titanium oxide, tin oxide, gama-alumina etc.For the complanation containing dielectric wafer surface (such as, silica containing surface), Preferred abrasives particle has the Mohs' hardness being less than 8.When being suitably incorporated in abrasive product, such particle will provide surface smoothness required on required cutting speed and wafer in planarization.Some harder abrasive grains may give surface smoothness coarse undesirably in oxidiferous wafer surface, therefore should add careful in the selection of suitable abrasives, and this is in the ability of those skilled in the art.Just containing dielectric wafer surface (such as, silica containing surface), Ceria abrasive particles is available.
Abrasive grain can comprise ceria (that is, cerium oxide) particle, and its particle mean size is by volume less than about 250 nanometers, is less than about 150 nanometers, is less than about 100 nanometers or is even less than about 50 nanometers.In one embodiment, abrasive grain can be made up of ceria particles substantially.The phrase that uses in the present context " substantially by ... composition " be intended to get rid of other (i.e. non-ceria) abrasive grain that its amount significantly affect the abrasive properties (if the wafer planarization for containing silicon wafer) of structured abrasive article.To recognize, described ceria particles can comprise agglomerate and/or the aggregation of less primary ceria particles (primary ceria particle).Such as, based on stereometer, ceria particles (being no matter exist with primary particle, agglomerate, aggregation or their combination) can have in about 1, about 5, about 10, about 20, about 30 or about 40 nanometers until particle mean size in about 50, about 60, about 70, about 80, about 90, about 95 nanometers or larger scope.Other nano-size abrasive materials particle of the size grades described for ceria can be adopted, comprise silica, zirconia, titanium oxide and aluminium oxide.
Described ceria particles can supply with the form of such as powder, dispersion or colloidal sol; Usually with dispersion or solation supply.Obtain particle mean size and be less than the method for the ceric oxide sol of about 250 nanometers and source is well known in the art.Being applicable to that cerium oxide dispersions of the present invention and colloidal sol comprises such as can purchased from the Degussa limited company (Evonik Degussa Corp.) of such as New Jersey Pa Xipani (Parsippany, NJ); The Rhodia Ltd (Rhodia, Inc.) of New Jersey Cranberry (Cranberry, NJ); The Ferro Co., Ltd (Ferro Corporation ofIndependence, OH) in independence city, Ohio; With ceric oxide sol and the dispersion of the supplier of Umicore Company (Umicore SA, Brussels, Belgium) of Brussels,Belgium.
Described abrasive grain can evenly or unevenly be dispersed in described polymeric binder.Term " dispersion " refers to that described abrasive grain spreads in described polymeric binder.Described ceria particles is evenly dispersed in the performance usually improving described structured abrasive article in described binding agent substantially.Therefore, usually available is assemble to promote its dispersion and/or to reduce by surface modifier process ceria particles, and strengthen subsequently with the coupling of binding agent.Surface modifier for ceria is well known in the art.The surface modifier of one type comprises carboxylic acids (methyl) acrylate.Exemplary carboxylic acids (methyl) acrylate comprises (methyl) acrylic acid, the mono alkyl ester of maleic acid, fumaric acid, the mono alkyl ester of fumaric acid, maleic acid, itaconic acid, iso-crotonic acid, crotonic acid, citraconic acid and (methyl) β-acryloxypropionic acid.
In a kind of illustrative methods by ceria particles described in the process of carboxylic acids (methyl) acrylate, by the dispersion (such as colloidal sol) of ceria particles in aqueous medium (such as, water) and pfpe acid and carboxylic acids (methyl) acrylate (to be enough to surface treatment separately and the amount of ceria particles described in stabilisation thus) and can with miscible organic solvents mix higher than water of boiling point.Usually, pfpe acid to the ratio of carboxylic acids (methyl) acrylate in the scope of about 3:5 to 5:3, although other ratios can be used.The example of useable solvents comprises 1-methoxy-2-propanol, dimethyl formamide and diethylene glycol dimethyl ether.Once mixing, vapourisation under reduced pressure is with substantially except anhydrating, and carboxylic acids (methyl) acrylate molecule wherein associated makes described ceria particles stabilisation to prevent the cerium oxide dispersions assembled.The cerium oxide dispersions of gained can easily be combined with binder precursor and any extra carboxylic acids (methyl) acrylate that may be included in binder precursor usually.
Although carboxylic acids (methyl) acrylate is generally used for the bonding promoting ceria particles to described binding agent, comprise pfpe acid to be mainly used in promoting the dispersion stabilization of ceria particles in described binding agent (or its precursor component) and/or solvent.As used herein, term " pfpe acid " refers to the compound with the polyether segment be covalently attached on acidic-group or on its salt.Exemplary polyether segment comprises poly-(ethylene glycol/propylene glycol) segment of polyethylene glycol segment, polyethylene glycol segment and mixing.Exemplary acidic-group Bao Kuo – CO 2h ,-PO 2h ,-PO 3h ,-SO 3h and salt thereof.In certain embodiments, pfpe acid can have maximum 12 carbon atoms, containing 12, and is expressed from the next:
R 1-(R 2-O) n-X-A
Wherein, R 1represent H, there is the alkyl (such as, methyl, ethyl or propyl group) of 1 to 6 carbon atom or there is the alkoxyl (such as, methoxyl group, ethyoxyl or propoxyl group) of 1 to 6 carbon atom; Each R 2represent the divalent alkyl (such as, ethylidene, propylidene or butylidene) with 1 to 6 carbon atom independently; N represents positive integer (such as, 1,2 or 3); And X represents the organic connection base of divalence or covalent bond; And A represents acidic-group (such as, described above).Exemplary pfpe acid comprises 2'-(2 "-methoxy ethoxy) ethyl succinate (monoesters), methoxyethoxyethoxy acetic acid and methoxyethoxyacetic acid.Binding agent also can comprise the product of the component comprising carboxylic acids (methyl) acrylate and poly-(methyl) acrylate.As mentioned above, usually by dispersions obtained before binder component mix with residue, general at least partially carboxylic acids (methyl) acrylate mix with described abrasive grain, although and nonessential.
Abrasive material comprises dispersion abrasive grain in a binder.Binding agent for abrasive product of the present invention is preferably formed by binder precursor, and described binder precursor is generally organic binder bond precursor.Binder precursor has and can fully flow can be coated with and the phase of then hardening.Harden by solidification (be such as polymerized and/or crosslinked) and/or by dry (such as driving away liquid) or just cooling realize.Precursor can be organic solvent based, water-based or the composition of 100% solid (that is, essentially no solvent).Thermoplasticity and thermosets and their combination all can be used as binder precursor.
Binder precursor is preferably curable organic material (that is, can be exposed to heat and/or other energy source such as there is polymerization and/or crosslinked or occur in time when adding chemical catalyst, moisture etc. to be polymerized and/or crosslinked material when electron beam, ultraviolet, visible ray etc.).Binder precursor example comprises: amino resins (such as amino resin) is as alkylated urea-formaldehyde resin, melamine formaldehyde resin and alkylation benzo guanamine-formaldehyde resins; Acrylate (comprising acrylate and methacrylate) is as vinyl acrylate, acrylated epoxy resins, acroleic acid esterification urethanes, acrylated polyesters, acroleic acid esterification acrylic compounds (acrylated acrylics), acrylated polyethers, vinyl ethers, acrylate carburetion and acrylated silicone; Alkyd resins is as urethane-alkyd resin, mylar, reactive amino Ethyl formate resin; Phenolic resins is as resol and linear phenol-aldehyde resin, phenolic aldehyde/latex resin; Epoxy resin is as bisphenol epoxy, isocyanates, isocyanuric acid ester; Polyorganosiloxane resin (comprising alkylalkoxysilane resins), reaction-ity ethylene base resin etc.Described resin can be the form of monomer, oligomer, polymer or their combination.
In certain embodiments, solvent-free binder precursor is substantially used.In this case, abrasive material is formed by mixing low-molecular-weight reactive explosive such as monomer and/or oligomer and abrasive grain together with any curing initiator, curing accelerator, curing agent, dispersant, other additive and/or filler needed for other usually.Be dispersed in by abrasive grain in binder precursor, then cured binders precursor/abrasive particle mixture is to form abrasive material.Binder precursor/abrasive particle mixture is often called as " slurry ".Suitable binder precursor, can at ambient conditions or close to environmental condition current downflow usually in uncured or non cross-linked state.After adding abrasive grain, then (namely usual binder precursor being exposed to solidified at least in part or be cross-linked, radical polymerization) binder precursor condition (being generally energy source) under, be translated into the binding agent of the abrasive grain that can retain dispersion thus.Exemplary source of energy comprises: electron beam, ultraviolet radiation, visible radiation, infrared radiation, gamma-radiation radiation, heat and combination thereof.
Binder precursor can comprise one or more multifunctional (methyl) acrylate.Available multifunctional (methyl) acrylate includes but not limited to monomer and/or the oligomer with at least two (methyl) acrylate groups; Such as, three (methyl) acrylate and four (methacrylates).Exemplary poly-(methacrylate) comprising: two (methyl) acrylate, such as such as two (methyl) acrylic acid 1,3-BDO ester, two (methyl) acrylic acid BDO ester, two (methyl) acrylic acid 1,6-hexylene glycol ester, single (methyl) acrylic acid list (methyl) acrylic acid 1,6-hexylene glycol ester, two (methyl) acrylic acid glycol ester, oxyalkylated aliphatic two (methyl) acrylate, oxyalkylated two (methyl) acrylate alkane diformazan alcohol ester, oxyalkylated two (methyl) acrylic acid hexylene glycol ester, oxyalkylated two (methyl) acrylic acid DOPCP, neopentyl glycol hydroxy new pentane acid ester two (methyl) acrylate of caprolactone modification, neopentyl glycol hydroxy new pentane acid ester two (methyl) acrylate of caprolactone modification, two (methyl) acrylate alkane diformazan alcohol ester, two (methyl) acrylic acid diethylene glycol (DEG) ester, two (methyl) acrylic acid DPG ester, (10) bisphenol-A two (methyl) acrylate of ethoxylation, (3) bisphenol-A two (methyl) acrylate of ethoxylation, (30) bisphenol-A two (methyl) acrylate of ethoxylation, (4) bisphenol-A two (methyl) acrylate of ethoxylation, trimethylolpropane two (methyl) acrylate of hydroxy pivalin aldehyde modification, two (methyl) acrylic acid DOPCP, polyethylene glycol (200) two (methyl) acrylate, polyethylene glycol (400) two (methyl) acrylate, polyethylene glycol (600) two (methyl) acrylate, ethoxylated neopentylglycol two (methyl) acrylate, two (methyl) acrylic acid tetraethylene glycol ester, two (methyl) acrylic acid Tricyclodecane Dimethanol ester, two (methyl) acrylic acid triethyleneglycol ester, two (methyl) acrylic acid tripropylene glycol ester, three (methyl) (methyl) acrylate, as three (methyl) glycerol acrylate, trimethylolpropane tris (methyl) acrylate, three (methyl) acrylate (such as, (3) trimethylolpropane tris (methyl) acrylate of ethoxylation of ethoxylation, (6) trimethylolpropane tris (methyl) acrylate of ethoxylation, (9) trimethylolpropane tris (methyl) acrylate of ethoxylation, (20) trimethylolpropane tris (methyl) acrylate of ethoxylation), three (methyl) acrylate, pentaerythritol, propenoxylated three (methyl) acrylate (such as, propenoxylated (3) three (methyl) glycerol acrylate, propenoxylated (5.5) three (methyl) glycerol acrylate, propenoxylated (3) trimethylolpropane tris (methyl) acrylate, propenoxylated (6) trimethylolpropane tris (methyl) acrylate), trimethylolpropane tris (methyl) acrylate, three (2-ethoxy) isocyanuric acid ester three (methyl) acrylate, and containing the compound of higher functionality (methyl) acryloyl group, as two-pentaerythrite six (methyl) acrylate of (4) pentaerythrite four (methyl) acrylate of two-trimethylolpropane four (methyl) acrylate, two-pentaerythrite five (methyl) acrylate, ethoxylation, pentaerythrite four (methyl) acrylate, caprolactone modification, oligomeric (methyl) acryl compound, such as such as polyester (methyl) acrylate, epoxy (methyl) acrylate, and their combination.This compounds can extensively available from manufacturer, the Sartomer (Sartomer Co.) of such as such as Pennsylvania's Exton (Exton, PA); The UCB chemical company (UCB Chemicals Corporation) of Georgia State Si Maina (Smyrna, GA); With the Aldrich Chemical company (Aldrich Chemical Company) of Milwaukee, WI (Milwaukee, WI).
Binder precursor can include at least one light trigger of effective amount; Such as, with about 0.1 % by weight, about 1 % by weight or about 3 % by weight until the amount of about 5 % by weight, about 7 % by weight or even about 10 % by weight or more.Available light trigger comprises those that become known for radical UV curing (methyl) acrylate.Exemplary light trigger comprises benzoin and derivative thereof, such as Alpha-Methyl benzoin; α-phenylbenzoin; α-allylic benzoin; α-benzyl benzoin; Benzoin ether, as benzil dimethyl ketal (can as vapour Bart different chemical company (the Ciba Specialty Chemicals of IRGACURE 651 available from New York Ta Lidun, Tarrytown, NY)), benzoin methyl ether, benzoin ethyl ether, benzoin n-butyl ether; Acetophenone and derivative thereof, such as, 2-hydroxy-2-methyl-1-phenyl-1-acetone (can as DAROCUR 1173 available from the different chemical company of vapour Bart) and 1-hydroxycyclohexylphenylketone (can as IRGACURE 184 available from the different chemical company of vapour Bart); 2-methyl isophthalic acid-[4-(methyl mercapto) phenyl]-2-(4-morpholinyl)-1-acetone (can as IRGACURE 907 available from the different chemical company of vapour Bart); 2-benzyl-2-(dimethylamino)-1-[4-(4-morpholinyl) phenyl]-1-butanone (can as IRGACURE 369 available from the different chemical company of vapour Bart); (two (2,4, the 6-trimethylbenzoyl) phosphine oxide of phenyl (can as the vapour Bart different chemical company of IRGACURE819 available from New York).Other available light trigger comprises single-and two-acylphosphanes (such as, can as IRGACURE 1700, IRGACURE 1800, IRGACURE 1850 and DAROCUR 4265 available from the different chemical company of vapour Bart).
Described binder precursor can include at least one thermal initiator of effective amount; Such as, with about 0.1 % by weight, about 1 % by weight or about 3 % by weight until the amount of about 5 % by weight, about 7 % by weight or even about 10 % by weight or more.Exemplary thermal free radical initiator comprises: azo-compound, such as such as 2,2-azo-bis-isobutyronitrile, 2,2'-azo-bis-iso-dimethyl, azo two (diphenyl methane), 4,4'-azo two-(4-cyanopentanoic acid), (2,2'-azo two (2,4-methyl pentane nitrile (can as the E.I.Du Pont Company (E.I.du Pont de Nemours and Co.ofWilmington, DE) of VAZO 52 available from Wilmington, DE); Peroxide, such as such as benzoyl peroxide, cumyl peroxide, tert-butyl peroxide, cyclohexanone peroxide, peroxide of glutaric acid and dilauroyl peroxide; Hydrogen peroxide; Hydroperoxides, such as such as tert-butyl hydroperoxide and hydrogen phosphide cumene; Peracid, such as such as peracetic acid and benzylhydroperoxide; Potassium peroxydisulfate; And perester, such as such as percarbonic acid diisopropyl ester.
In certain embodiments, desirably comprise the undersaturated polymerizable compound of one or more Mono-olefinic in described binder precursor; Such as, to reduce viscosity and/or reduce crosslink density in gained binding agent.The undersaturated polymerizable compound of exemplary Mono-olefinic comprises: single (methyl) acrylate, comprise (methyl) Hexyl 2-propenoate, 2-EHA, (methyl) acrylic acid ester in the different ninth of the ten Heavenly Stems, (methyl) isobornyl acrylate, (methyl) phenoxyethyl acrylate, (methyl) acrylic acid 2-hydroxyl ethyl ester, (methyl) dodecylacrylate, (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) n-propyl, (methyl) n-butyl acrylate, (methyl) n-octyl, (methyl) isobutyl acrylate, (methyl) cyclohexyl acrylate or (methyl) octadecyl acrylate, N-vinyl compound, such as such as N-vinyl formamide, NVP or N-caprolactam, and their combination.
In certain embodiments, described abrasive material can also comprise one or more additives.Additive produces selective, the high WIWNU uniformity removing speed, the loss of lower nitride and improve of high oxide/nitride.Although not bound by theory, but it is believed that, in wafer polishing procedure process (it generally includes hydraulic fluid), one or more additives affect glossing by remaining on energetically with the abrasive material surface of contact wafers and/or by being released to interact in hydraulic fluid thus with just polished wafer surface.For promoting the dissolving of one or more additives in hydraulic fluid, one or more additives described have usually 100 to 1, the molecular weight in the scope of 200 grams every mole, but can use higher and lower molecular weight.The dissolubility of additive in hydraulic fluid is by the impact of solute deliquescent rule in a solvent, and this is known in the art.Because hydraulic fluid is usually aqueous solution, therefore the chemical constitution of one or more additives described preferentially has at least one polar functional group or chemical feature to promote the dissolubility in aqueous treatment liquid.
The example of suitable additive includes but not limited to: acid complexing agent, nonionic surface active agent, silicon surface active agent, fluorine-containing surfactant and water-soluble polymer.Although any one in above-mentioned additive all can be considered first or Second addition of abrasive material, in certain embodiments, acid complexing agent is the first additive.Comprising acid complexing agent as in another embodiment of the first additive, Second addition is selected from nonionic surface active agent, silicon surface active agent, fluorine-containing surfactant, water-soluble polymer and their combination.
Usually additive to be added in binder precursor and to be regarded as the part of binder precursor mixture.In binder precursor mixture, adding abrasive grain, then after solidification, additive is introduced in abrasive material 120 and the shaped abrasive compound 130 that correspondingly formed.
In certain embodiments, abrasive material comprises one or more acid complexing agents as additive.The example of suitable acid complexing agent includes but not limited to multiple tooth acid complexing agent.The example of suitable multiple tooth acid complexing agent include but not limited to amino acid or by amino acids formed dipeptides one of at least.Suitable amino acid whose example includes but not limited to: alanine, proline, glycine, histidine, lysine, arginine, ornithine, cysteine, tyrosine, the dipeptides from two seed amino acids formation, acid complexones and their combination.Specially suitable amino acid includes but not limited to L-arginine and L-PROLINE.The example of suitable commercially available L-arginine includes but not limited to L-arginine (the Sigma-Aldrich company (Sigma-Aldrich Co.LLC, St.Louis, Missouri) of St. Louis).The example of suitable commercially available L-PROLINE includes but not limited to L-PROLINE.Acid complexing agent usually with the amount between about 0.1 % by weight and about 3 % by weight, particularly with the amount between about 0.25 % by weight and about 2 % by weight, more especially exist with the amount between about 0.5 % by weight and about 1.5 % by weight.
In certain embodiments, abrasive material comprises one or more nonionic surface active agent as additive.Nonionic surface active agent can be dispersed in binder precursor.Usually, between surfactant and binding agent, covalent chemical bond is not had.Binder precursor can be cross-linked as further described and adjust its release from abrasive material to help to comprise surfactant in abrasive material.Based on the total weight of abrasive material, the amount of the nonionic surface active agent existed in abrasive material can 0.75 % by weight to 2.2 % by weight, 1.0 % by weight to 2.2 % by weight, 1.3 % by weight to 2.2 % by weight, in the usual scope of 1.5 % by weight to 2.0 % by weight.For promoting the dissolving of surfactant in aqueous treatment liquid, nonionic surface active agent has usually 300 to 1, the molecular weight in the scope of 200 grams every mole, but can use higher and lower molecular weight.
In certain embodiments, nonionic surface active agent can be polyethers nonionic surface active agent.As used herein, term " polyether non-ionic surface active agent " refer to there is polyether segment one or more nonionics (namely, there is no permanent charge) surfactant, described polyether segment forms the main chain of surfactant at least partially usually, although this is dispensable.With regard to the normal conditions of surfactant, polyethers nonionic surface active agent should not be covalently bound to binding agent.For promoting the dissolving in aqueous fluids, polyethers nonionic surface active agent has usually 300 to 1, the molecular weight in the scope of 200 grams/mol, but also can use higher and lower molecular weight.
The example of polyether non-ionic surface active agent comprises polyoxyethylene alkyl ether, polyxyethylated-phenyl ether, polyoxyethylene acyl ester, polyoxyethylene alkyl amine, polyoxyethylene alkylamide, polyoxyethylene lauryl ether, PCE, polyoxyethylene stearyl base ether, polyoxyethylene oleyl ether, NONIN HS 240, ethylene nonyl phenyl ether, polyethylene glycol laurate, polyethylene glycol stearate, polyglycol distearate, polyethylene glycol (PEG) oleate, POLOXAMER, polyoxyethylene sorbitan laurate, polyoxyethylene sorbitan stearate, polyoxyethylene sorbitan oleate and polyoxyethylene laural acid amides.
Available polyether non-ionic surface active agent also comprise (such as) high fat alcohol and about 3 equivalents to about 100 equivalent oxirane condensation product (such as, sold with trade name TERGITOL 15-S by Dow Chemical Company (Dow ChemicalCo.) those, such as TERGITOL 15-S-20; And those that to be sold with trade name BRIJ by ICI Americas Inc (ICI Americas of Bridgewater, NJ) of New Jersey Bridgwater, such as such as BRIJ 58, BRIJ 76 and BRIJ 97).BRIJ97 surfactant is polyoxyethylene (10) oleyl ether; BRIJ 58 surfactant is polyoxyethylene (20) cetyl ether; And BRIJ 76 surfactant is polyoxyethylene (10) stearyl ether
Available polyether non-ionic surface active agent also comprise (such as) alkyl phenol and about 3 equivalents to about 100 equivalent oxirane polyethylene oxide condensation compound (such as, sold with trade name IGEPAL CO and IGEPAL CA by the Rhodia (Rhodia of Cranbury, NJ) in New Jersey Crane uncle those).IGEPAL CO surfactant comprises poly-(ethyleneoxy) ethanol of Nonylphenoxy.IGEPAL CA surfactant comprises poly-(ethyleneoxy) ethanol of Octylphenoxy.Available polyether non-ionic surface active agent also comprises the block copolymer of (such as) oxirane and expoxy propane or epoxy butane (such as, by BASF AG (BASF Corp.of MountOlive of New Jersey Mang Teaolifu, NJ) sell with trade name PLURONIC (such as, PLURONIC L10) and TETRONIC those).PLURONIC surfactant can comprise epoxypropane polymer, ethylene oxide polymer and ethylene oxide-propylene oxide block copolymer.TETRONIC surfactant comprises ethylene oxide-propylene oxide block copolymer.
In certain embodiments, polyether non-ionic surface active agent can comprise polyoxyethylene sorbitan fatty acid esters (such as, Polysorbate 80, it can have different ethoxylation degrees, such as such as, 20 ethylene oxy units/molecules (such as, sell with TWEEN 60) or 20 ethylene oxy units/molecules are (such as, sell with TWEEN 80)) and Myrj 45 is (such as, by You Nishema company (the Uniqemaof New Castle of Delaware State Newcastle, DE) sell with trade name TWEEN and MYRJ those).TWEEN surfactant comprises poly-(oxirane) C 12-C 18anhydrosorbitol monoester.MYRJ surfactant comprises poly-(oxirane) stearate.
In certain embodiments, polyether non-ionic surface active agent is the only table surface-active agent existed in shaped abrasive composite or aqueous fluids in process of lapping.In some cases, maybe advantageously add the anion surfactant of small amount, such as, derive from the anion acid ester polyether ester of Dow Chemical Company with trade name TRITON H55.
Usually, nonionic surface active agent has at least about 4, particularly at least about 6, more especially at least about 8, more especially at least about 10 hydrophilic-lipophilic balance (HLB) (namely, HLB) calculated value, this value calculates divided by 5 with the percetage by weight of hydrophile in surfactant molecule.HLB calculated value is not more than 20 usually.Nonionic surface active agent advantageously can be selected from the primary alcohol ethoxylate of straight chain, secondary alcohol ethoxyl compound, the secondary alcohol ethoxyl compound of side chain, octylphenol ethoxylate, acetylene series primary alcohol ethoxylate, acetylene series uncle diol ethoxylate, alkane diol, hydroxy-end capped epoxy ethane-epoxy propane random copolymer, fluoroaliphatic polymer ester and their mixture.The example of suitable commercially available ethylidene oxygen (ethylene oxide) nonionic surface active agent includes but not limited to Tergitol15-S-7 (Sigma-Aldrich company (the Sigma-Aldrich Co.LLC of St. Louis, St.Louis,) and Titron X-100 (Sigma-Aldrich company (the Sigma-Aldrich Co.LLC of St. Louis Missouri), St.Louis, Missouri)).Nonionic surface active agent acid usually with the amount between about 0.1 % by weight and about 3 % by weight, particularly with the amount between about 0.25 % by weight and about 2 % by weight, more especially exist with the amount between about 0.5 % by weight and about 1.5 % by weight.
In certain embodiments, abrasive material comprises one or more silicon surface active agents as additive.The example of suitable commercially available silicon surface active agent includes but not limited to Silwet L-7200, Silwet L-7280 (MomentivePerformanceMaterials (the Momentive PerformanceMaterial of state of West Virginia Fleder profit, Friendly, West Virginia)).Silicon surface active agent usually with the amount between about 0.1 % by weight and about 3 % by weight, particularly with the amount between about 0.25 % by weight and about 2 % by weight, more especially exist with the amount between about 0.5 % by weight and about 1.5 % by weight.
In certain embodiments, abrasive material comprises one or more fluorine-containing surfactants as additive.The example of suitable commercially available fluorine-containing surfactant includes but not limited to FC 9 (3M company (the 3M Company of St. Paul, MN, St.Paul,) and the Zonyl (E.I.Du Pont Company (Dupont of Wilmington, DE Minnesota), Wilmington, Delaware)).Fluorine-containing surfactant usually with the amount between about 0.1 % by weight and about 3 % by weight, particularly with the amount between about 0.25 % by weight and about 2 % by weight, more especially exist with the amount between about 0.5 % by weight and about 1.5 % by weight.
In certain embodiments, abrasive material comprises one or more water-soluble polymers as additive.The example of suitable water-soluble polymer includes but not limited to polymeric acid, such as polyacrylic acid and polyphosphoric acid.Water-soluble polymer usually with the amount between about 0.1 % by weight and about 3 % by weight, particularly with the amount between about 0.25 % by weight and about 2 % by weight, more especially exist with the amount between about 0.5 % by weight and about 1.5 % by weight.
One or more the combination in described additive (acid complexing agent, nonionic surface active agent, silicon surface active agent, fluorine-containing surfactant and water-soluble polymer) can be used.Preferably be combined as acid complexing agent and nonionic surface active agent.More specifically, use together with nonionic surface active agent and comprise amino acid, multiple tooth acid complexing agent by amino acids formed dipeptides and their combination.Amino acid can be selected from following: alanine, proline, glycine, histidine, lysine, arginine, ornithine, cysteine, tyrosine and their combination.Nonionic surface active agent can be polyethers nonionic surface active agent.Nonionic surface active agent can be selected from following: the primary alcohol ethoxylate of straight chain, secondary alcohol ethoxyl compound, the secondary alcohol ethoxyl compound of side chain, octylphenol ethoxylate, acetylene series primary alcohol ethoxylate, acetylene series uncle diol ethoxylate, alkane diol, hydroxy-end capped epoxy ethane-epoxy propane random copolymer, fluoroaliphatic polymer ester and their mixture.
Other material can be comprised in abrasive material, comprise one or more in antioxidant, colouring agent, light and heat stabilizing agent or filler (described filler is on the essentially no impact of nonferromagnetic substance).
The structured abrasive article comprising shaped abrasive composite provided can be made by universal method well known in the art.Such as, in a kind of method of enforcement, the binder precursor of slurry form and abrasive grain can be injected in the complementary die cavity in the tool of production with required shaped abrasive composite appearance and size.Then semi-transparent film backing can be made to contact with (in some cases) tool of production with slurry.Can at least fully cured binders precursor to remove shaped abrasive compound from the tool of production.Or, the described tool of production, at least semi-transparent film backing and slurry charging simultaneously can be passed through roll gap.Optionally, (such as, hot Post RDBMS) can be solidified further in this stage to improve curing degree further and to improve described adhesive properties thus.Further details about the method for the formation of shaped abrasive composite is found in (such as) U.S. Patent No. 5,152,917 (people such as Pieper).
Independent shaped abrasive composite can to have in multiple geometric solid any one shape, or erose.Usually, described shaped abrasive composite is Accurate Shaping (as defined above).Usually, forming described shaped abrasive compound makes the base portion of described shaped abrasive compound (part that shaped abrasive compound contacts with semi-transparent film backing) be fixed to semi-transparent film backing.The nearly base section (proximal portion) of shaped abrasive composite has surface area identical or larger compared with the part of the shaped abrasive composite away from substrate or backing usually.
The abrasive composites of Accurate Shaping can be any 3D shape that can form at least one protruding features thing or groove on the surface of the exposure of abrasive material.Available shape comprises such as cube, prism (such as, hexagonal prism), cone (such as, corner cone or hexagonal pyramid), truncated pyramid, circular cone, frustum of a cone, hemisphere, cross or has the post sample cross section of far-end.Compound pyramid can have 4 sides, 5 sides or 6 sides.Also the combination of the abrasive composites of difformity and/or size can be adopted.The abrasive material of structured abrasive can be continuous or discontinuous.Described shaped abrasive composite with row, with concentric circles, with spiral or with grid pattern arrangement, or can be placed at random.Details about the structured abrasive article and production method thereof with Accurate Shaping abrasive composites is found in (such as) U.S. Patent No. 5,435,816 (people such as Spurgeon); 5,454,844 (people such as Sheba moral (Hibbard)); 5,851,247 (people such as Si Tuoceer (Stoetzel)); With 6,139,594 (people such as Jin Kaide (Kincaid)).
Form shaped abrasive composite side can perpendicular to backing, to tilt relative to backing or distally taper in width is tapered.But, if described side is taper, easier the abrasive composites of shaping to be shifted out from the chamber of mould or the tool of production.Substantially vertical angle is preferred, because which results in the Nominal contact area consistent when described worn composite.
The height of each shaped abrasive composite is usually substantially identical, but it is contemplated that to have highly different composites in single structure abrasive product.Described composite can be less than about 2,000 micron usually relative to backing or relative to the height of the piston ring land (land) between composite; Such as in the scope of about 10 microns to about 250 microns.The base dimension of independent shaped abrasive compound can be about 5,000 micron or less, and particularly about 1,000 micron or less, be more especially less than 500 microns.The base dimension of independent shaped abrasive compound is greater than about 50 microns usually, is particularly greater than about 100 microns.The base portion of described shaped abrasive composite can be adjacent to each other, or be separated by some specific range.
Adjacent formed composite material can be shared in the Contact of composite sidewall in opposite directions and the public shaped abrasive composite piston ring land of extension or bridge shape structure.Usually, the height of described land configuration is not more than about 33% of each adjacent composites vertical height size.Shaped abrasive composite piston ring land can be formed by the same slurry for the formation of described shaped abrasive composite.Described composite is " adjacent ", namely between the heart, drawn imaginary line does not exist composite placed in the middle in the composite.At least part of described shaped abrasive composite can be separated from one another to provide recessed region between the bossing of described composite.
The rectilineal interval of shaped abrasive composite can in the scope of about 1 the shaped abrasive composite of every lineal cm to about 200 the shaped abrasive composites of every lineal cm.Described rectilineal interval can be changed, be greater than another place to make the concentration of composite at a place.Such as, closeness can be maximum in the center of grinding tool.The surface density of described composite in certain embodiments can in every square centimeter about 1 scope to about 40,000 composites.One or more regions of described backing can be expose, that is, do not contact the abrasive coating of at least semi-transparent film backing.
Shaped abrasive compound is arranged on backing on backing or with preposition with predetermined patterned arrangement usually, but this is optional.Such as, in the abrasive product made by providing slurry between backing and the tool of production with chamber wherein, the predetermined pattern of described composite corresponds to the pattern of described tool of production upper chamber.Described pattern can be reappeared in goods ground one by one thus.In one embodiment, shaped abrasive composite can form array or arrangement, and this may mean, described composite is regular array, as the row and column of collimation, or the row and column be alternately arranged.If needed, a line shaped abrasive composite can in the second direct alignment in row shaped abrasive composite front.Usually, a line shaped abrasive composite can stagger with the second row shaped abrasive composite.
In another embodiment, described shaped abrasive composite can with " at random " array or patterned arrangement.This means that described composite is not the regular array of row mentioned above and row.Such as, shaped abrasive compound can as United States Patent (USP) the 5th, 672, No. 097 and the 5th, and disclosed in 681, No. 217 (all authorizing the people such as Hoopman), mode is arranged.But, it being understood that this " at random " array can be predetermined pattern, because the position of composite can be predetermined on described abrasive product, and correspond to the position for the manufacture of the tool of production middle chamber of described abrasive product.
The exemplary tool of production comprises roller, endless belt and web, and can by suitable material as metal (such as, with regard to roller) or polymer film (such as, with regard to endless belt and web) are made.
The shape of the structured abrasive article provided can be normally circular, such as, is the form of abrasive disc.The outward flange of described abrasive disc is normally smooth, can be maybe scalloped.Described structured abrasive article can also be oval form or be any polygonal shape, as triangle, square, rectangle etc.Or described abrasive product can be the form of band.Described abrasive product can provide with the form of roller, is usually called abrasive belts roller (tape rolls) at abrasive art.Usually, described abrasive belts roller can by continuity index (indexed) or mobile in wafer planarization process.Can by the punching of described abrasive product to provide the opening through described abrasive coating and/or described backing, so as before the use, among and/or allow working fluid to pass through afterwards; Although in an advantageous embodiment, described structured abrasive article does not have substantially, or does not have this type of perforation even completely.
Abrasive material can be applied to the front surface of backing, i.e. the first first type surface of backing.In use, the second first type surface of backing (i.e. the side opposing with abrasive material of backing) usually can be made to contact with base wad (subpad).In some cases, described structured abrasive article can be fixed on described base wad.Directly can bond to the second first type surface of backing and be attached intermediate layer.Attachment intermediate layer can be used to adhesive structure abrasive product to another substrate, such as, and base wad or platen.Attachment intermediate layer can be adhesive, contact adhesive or adhesive transfer adhesive tape (that is, two-sided tape), and it can be applied to the opposing surface of backing.Also one or more suitable mechanical fastening device can be used.Suitable base wad such as in U.S. Patent No. 5,692,950 and No.6, open in 007,407 (all authorizing the people such as Rutherford).If employing optical detection, then described base wad and base wad settle any platen thereon should have the suitable window of at least one size (such as, opening or transparent insert) to allow to be formed from the continuous optical path of light source (such as, laser instrument) through described platen and base wad.
The structured abrasive article provided can be used for grinding and/or polishing workpiece, comprises those wafers on its outer surface with oxide skin(coating) as the wafer (such as, silicon wafer, chip glass etc.) containing silicon or other metal.Such as, described structured abrasive article can be used for grinding and/or polishing deposition dielectric substance on the wafer and/or described wafer itself.Suspect in addition, the abrasive product provided can be used for grinding or other material of polishing, such as sapphire or other mineral.The variable affecting wafer polishing rate and characteristic comprises, the selection of the flow velocity of such as suitable between wafer surface and abrasive product contact, the type of working fluid, relative velocity between wafer surface and abrasive product and relative motion and described working fluid.These variablees are relative to each other, and usually select according to each wafer surface of process.
Can before wafer planarization process and/or off and in wafer planarization process, such as by using pad trimmer (pad conditioner) (such as, there is the diamond coarse grain be fixed in metal matrix) grind described surface, repair thus according to structured abrasive article of the present invention.A kind of available trimmer is CMP pad sheet trimmer (being usually arranged on rigid back liner plate), Part No. CMP-20000TS, can available from the Mo Gen Advanced Ceramics Corp of California Hai Wade (Hayward, CA) (Morgan Advanced Ceramics).
Usually, because multiple treatment step can be there is for single semiconductor wafer, so semi-conductor industry expects that described method will provide relatively high material removal rate.The material removal rate obtained with specific abrasive product usually with mechanical condition and process wafer surface type and change.But, although usually desirably have high conductor or dielectric substance removes speed, described conductor or dielectric substance can be selected to remove speed with the surface characteristics making it can not damage required surface smoothness and/or described wafer surface.
Referring now to Fig. 2, in the illustrative methods on grinding wafers surface, employ burnishing device 200.In this method, structured abrasive article 100 contacts base wad 210 and is fixed to base wad 210, and base wad 210 is fixed to platen 220 then.Base wad 210 can comprise foam (such as, polyurethane foam) or other compressible material, has the first window 212 in it, and platen 220 has the second window 222 in it.Wafer chuck 233 is installed on head unit (head unit) 231, and described head unit is connected on motor (not shown).Universal joint chuck 232 extends to wafer chuck 233 from head unit 231.Wafer chuck 233 helps wafer 240 to be fixed on head unit 231 and also also prevents described semiconductor wafer to be shifted in planarization.Wafer chuck 233 extends along wafer 240 at loop section 233a.Loop section 233a (being optional) can be independent sheet material or can form one with wafer chuck 233.Make the abrasive material 120 of wafer 240 contact structures abrasive product 100, and wafer 240 and abrasive material 120 relative to each other move.To use through the second window 222, first window 212 and structured abrasive article 100 and the oxide surface 242 of wafer 240 is left in reflection and the laser beam 250 in its path of then turning back monitors the process of polishing/grinding.Optional working fluid 260 can be used to promote described process of lapping.Reservoir 237 stores optional working fluid 260, and described working fluid is pumped into the interface between semiconductor wafer and described abrasive material by pipe 238.Available working fluid comprises those that enumerate in such as U.S. Patent number 5,958,794 (people such as Bruxvoort).
Usually, the wafer surface polishing substantially without scratch and defect is desirable.The surface smoothness of wafer is evaluated by known method.One method measures Rt value, and it provides measuring of roughness, and can show scratch or other blemish.The described wafer surface of usual finishing is to obtain the Rt value being not more than about 0.4 nanometer, being more generally not more than about 0.2 nanometer, being even more generally not more than about 0.05 nanometer.Usual employing laser interferometer, as Wyko RST PLUS interferometer (Wei Yike company (the Wyko Corp. of Arizona State Du Sang, Tucson,) or Tencor profilograph (KLA-Tencor company (the KLA-Tencor Corp. of San Jose AZ), San Jose, CA)) measure Rt.Scratch detection can also be carried out by dark field microscope method.Scratch depth can be measured by atomic force microscopy.
Wafer surface processing can be carried out under the existence of working fluid, described working fluid can be selected according to the composition of wafer surface.In some applications, described working fluid comprises water usually.Described working fluid contributes to being processed together with described abrasive product by chemical mechanical polishing method.In the chemical part process of polishing, described working fluid can react with the outer surface of wafer or exposed surface.Then at the mechanical part of processing, abrasive product can remove this product.
The current trend of memory storage device and other electronic device is miniaturized.Needs polishing can have the wafer of very little feature and do not produce the abrasive product of defect.Some exemplary devices have the little feature to 32nm, 28nm or even 20nm.For these wafers of polishing, importantly, abrasive product can produce the smooth surface with considerably less defect with relatively high speed.In addition, after polishing, diameter can be 100mm or larger wafer need there is the uniform shape having minimum pit.Be surprised to find, the structured abrasive article comprising the abrasive material having acid complexing agent and be optionally dispersed in nonionic surface active agent wherein can exceed the speed of/min bends down defect, low nitrogen nitride removes speed and good WIWNU from thermal oxide wafer removing materials.
Further illustrate objects and advantages of the present invention by following limiting examples, but the concrete material described in these examples and consumption thereof and other conditions and details should not be considered as carrying out improper restriction to the present invention.
example
The present invention has in the following example and describes more specifically, and described example is only illustrative, because the many modification in the scope of the invention and change will be apparent to those skilled in the art.Except as otherwise noted, all numbers, percentage and the ratio that describe in following example are all by weight.
material
method of testing
wafer polishing
Use and can derive from Applied Materials (the Applied Materials of Santa Clara by trade name REFLEXION polishing machine, Inc., Santa Clara, CA) CMP polishing machine, by the thermal oxidation silicon of fixed-abrasive web polishing 300mm diameter and PECVD silicon nitride blanket wafers and the oxide/nitride patterned wafers with MIT764 test pattern.One of polishing station of web instrument is equipped with the web balladeur train being suitable for installation and operation FA web on polishing tool.On the platen of polishing machine, install base wad, described base wad trade name " 3M CMP FIXED ABRASIVE P7100SUB PAD " can derive from the 3M company (3M Company, St.Paul, Minnesota) of St. Paul, MN.In the carriage assembly of polishing machine, install fixed-abrasive web makes web align with the base wad be arranged on platen and above base wad.Process conditions are as follows:
Platen speeds: 40rpm.
Rubbing head speed: 32rpm.
Rubbing head pressure: clasp 4.2psi, district 13.4psi, district 21.9psi, district 32.0psi, district 42.0psi, district 52.0psi.
Polishing time: each blanket wafers 60 seconds, each patterned wafers 30 seconds.
The every wafer of web increment: 3mm.
Polishing fluids (standard): the L-PROLINE in deionized water of 2.5 % by weight, pH10.5.
Flow velocity: 200ml/min.
In some cases, in above-mentioned standard polishing solution, add additive, various additive and concentration used are see table 1.Potassium hydroxide is used to regulate the pH to 10.5 of solution.300mm code-pattern oxide wafer measures oxide removal rate and unevenness.Average silicon nitride loss on silica and silicon nitride pattern wafer on 50 μm of lines is shown in Table 1.
Use is measured to the oxide of both blanket wafers and patterned wafers and nitride removal rates and is integrated with REFLEXION polishing machine and NovaScan 3060 ellipsometer supplied by Applied Materials (Applied Materials) carries out.Code-pattern oxide and nitride wafers use the 25-pt diameter scans getting rid of 3mm edge to measure.Nitride loss is measured and is carried out near the center line of 50 micro wire/50 micrometer air space arrays.7 different crystal grain places measured pattern wafers of outermost crystal grain (die) are being shifted to from center wafer.With minimum 25 code-pattern oxide wafers, then use patterned wafers, then by each new web of code-pattern nitride wafers test.Report from the average removal rate of last 10 code-pattern oxides as oxide removal rate.Nitride removal rates data and nitride lost data is obtained respectively from single nitride blanket wafers and patterned wafers.If use different polishing fluids to carry out extra test to same web, then use identical test program, report that the mean value of last 5 wafers is as oxide removal rate unlike only polishing 10 code-pattern oxide wafers.
example 1: the fixed-abrasive web in a binder with L-arginine
the preparation of cerium oxide dispersions 1
Prepare cerium oxide dispersions as follows: in mixer, pour into 11.4045kg Ce-A, then while mixing with the blade scribbling polytetrafluoroethylene (PTFE), slowly add 703g 2-2-MEEAA, 568g β-CEA and 2.7907kg 1-M-2-Pr.Described mixture is heated to 50 DEG C and mixes spend the night.Subsequently described mixture is transferred in rotary evaporator and also under reduced pressure removes excessive water.Dispersions obtained, cerium oxide dispersions 1, has the solids content of 49.54 % by weight.
the preparation of slurry 1
In mixer, add 1,243.4g cerium oxide dispersions 1 and 18.5g D-111 and mix.In this mixture, add 3.49g 2-HEMA, 8.85g SR 339,67.86g SR 351,3.81g β-CEA, 14.0g L-Arg and 0.42g are dissolved in Phth in 20g 1-M-2-Pr.Mix described mixture 30 minutes with the blade scribbling polytetrafluoroethylene (PTFE), then transfer to rotary evaporator to remove 1-M-2-Pr.After removing solvent, slurry is cooled to room temperature, then adds 0.71g IRG 819,0.71gVAZO 52 and 0.18g HQME, then mix two hours, produce slurry 1.
the preparation of fixed-abrasive web 1
Use as United States Patent (USP) the 5th, the micro-manufacturing technology that copies described in 152, No. 917 people such as () Pieper forms fixed abrasive articles of the present invention.Width is provided to be the roller of the polypropylene tool of production of 30 inches (76 centimetres).The described polypropylene tool of production for having the polypropylene screen of the hexagonal array (center is 350 microns) of hexagon cylindrical chamber (wide 125 μm, dark 30 μm), corresponding to the chamber zone of 10%.The described tool of production is the reversion pattern of the required form of abrasive composites in final structured abrasive article, size and arrangement substantially.(roll gap power is 1 to use casting roller and nip rolls, 300 pounds (5.78kN)), then by having UV light source (V bulb, model EPIQ, spoke deep ultraviolet system house of Gaithersburg, MD city (Fusion UV Systems can be derived from, Inc., Gaithersburg, slurry 1 is coated between the chamber of the tool of production and backing 1 by UV curing station Maryland)), linear velocity is 10 feet/min (3.0m/min), and total exposure is 6.0kW/ inch (15.2kW/cm).Be separated polypropylene instrument from backing 1, produce the abrasive material of solidification, described abrasive material has the abrasive composites of Accurate Shaping, adheres to backing 1, forms fixed-abrasive web 1, i.e. example 1.The polish results of the wafer of use-case 1 polishing is shown in Table 1.
example 2: the fixed-abrasive web in a binder with L-arginine and Tergitol
the preparation of slurry 2
In mixer, add 969.6g Ce-A and 9.8g D-111 and mix.In this mixture, add 4.49g 2-HEMA, 11.37g SR 339,87.24g SR 351,3.0 grams of L-Arg, 6.0g T-15-7-S and 0.54g are dissolved in Phth in 20g 1-M-2-Pr.Mix described mixture 30 minutes with the blade scribbling polytetrafluoroethylene (PTFE), then transfer to rotary evaporator to remove 1-M-2-Pr.After removing solvent, slurry is cooled to room temperature, then adds 0.99g IRG 819,0.99g VAZO 52 and 0.25gHQME, then mix two hours, produce slurry 2.
the preparation of fixed-abrasive web 2
Use the program identical with described in example 1 to prepare fixed-abrasive web, replace slurry 1 unlike the use of slurry 2.Gained fixed-abrasive is named as fixed-abrasive web 2, i.e. example 2.The polish results of the wafer of use-case 2 polishing is shown in Table 1.
example 3: the fixed-abrasive web in a binder with L-PROLINE
the preparation of slurry 3
In mixer, add 1,253.8g cerium oxide dispersions 1 and 18.5g D-111 and mix.In this mixture, add 3.49g 2-HEMA, 8.85g SR 339,67.86g SR 351,3.81g β-CEA, the solution of L-PROLINE in the water/1_M-2-Pr of 50/50 ratio of 70g 20% and 0.42g be dissolved in Phth in 20g 1-M-2-Pr.Mix described mixture 30 minutes with the blade scribbling polytetrafluoroethylene (PTFE), then transfer to rotary evaporator to remove 1-M-2-Pr.After removing solvent, slurry is cooled to room temperature, then adds 0.74g IRG 819,0.74g VAZO 52 and 0.185g HQME, then mix two hours, produce slurry 3.
the preparation of fixed-abrasive web 3
Use the program identical with described in example 1 to prepare fixed-abrasive web, replace slurry 1 unlike the use of slurry 3.Gained fixed-abrasive is named as fixed-abrasive web 3, i.e. example 3.The polish results of the wafer of use-case 3 polishing is shown in Table 1.
the non-additive fixed-abrasive web of comparative example 4
the preparation of slurry 4
In mixer, add 1,243.4g cerium oxide dispersions 1 and 18.5gD-111 and mix.In this mixture, add 3.48g 2-HEMA, 8.85g SR 339,67.86g SR 351,3.81 grams of β-CEA and 0.42 gram are dissolved in Phth in 20g 1-M-2-Pr.Mix described mixture 30 minutes with the blade scribbling polytetrafluoroethylene (PTFE), then transfer to rotary evaporator to remove 1-M-2-Pr.Slurry is cooled to room temperature, then adds 0.74g IRG 81,0.74g VAZO 52 and 0.18g HQME, then mix two hours, produce slurry 4.
relatively with the preparation of fixed-abrasive web 4
Use the program identical with described in example 1 to prepare fixed-abrasive web, replace slurry 1 unlike the use of slurry 4.Gained fixed-abrasive is named as to compare uses fixed-abrasive web 4, i.e. comparative example 4.The polish results of the wafer of comparative example 4 polishing is used to be shown in Table 1.Should point out, the general composition (that is, not indicating change) of example 1 and example 3 is suitable with comparative example 4.
comparative example 5: non-additive fixed-abrasive web
the preparation of slurry 5
In mixer, add 825.3g CE-A, 295.9g 1-M-2-Pr and 8.2g D-111 and mix.In this mixture, add 3.64g 2-HEMA, 8.78g SR 339,68.34g SR 351,8.24 grams of β-CEA and 0.45g are dissolved in Phth in 20g 1-M-2-Pr.Mix described mixture 30 minutes with the blade scribbling polytetrafluoroethylene (PTFE), then transfer to rotary evaporator to remove 1-M-2-Pr and water.After removing solvent, slurry is cooled to room temperature, then adds 0.80g IRG 819,0.80g VAZO 52 and 0.44g HQME, then mix two hours, produce slurry 5.
relatively with the preparation of fixed-abrasive web 5
Use the program identical with described in example 1 to prepare fixed-abrasive web, replace slurry 1 unlike the use of slurry 5.Gained fixed-abrasive is named as to compare uses fixed-abrasive web 5, i.e. comparative example 5.The polish results of the wafer of comparative example 5 polishing is used to be shown in Table 1.Should point out, the general composition (that is, not indicating change) of example 2 is suitable with comparative example 5.
table 1
Watch the data of table 1, surprisingly, the abrasive product of the application of the invention can obtain low nitride penalty values.
Under the prerequisite not departing from scope of the present invention and essence, will be apparent for those skilled in the art to various modification of the present invention and change.Should be appreciated that the present invention is not intended to limit undeservedly by exemplary embodiment as herein described and example, and above-described embodiment and example only propose by way of example, category of the present invention is intended to only be limited by this paper claim as described below.The all bibliography quoted in the disclosure are all incorporated to herein in full with way of reference.

Claims (23)

1. a structured abrasive article, comprises:
Backing, described backing has the first opposed first type surface and the second opposed first type surface;
Structured abrasive layer, described structured abrasive layer to be arranged on described first first type surface and to be fixed to described first first type surface, and wherein said structured abrasive layer comprises:
Polymeric binder,
Be dispersed in the abrasive grain in described binding agent; And
Be dispersed in the first additive in described binding agent, wherein said first additive is multiple tooth acid complexing agent,
Wherein said multiple tooth acid complexing agent comprises amino acid, by amino acids formed dipeptides and their combination.
2. structured abrasive article according to claim 1, wherein said amino acid is selected from: alanine, proline, glycine, histidine, lysine, arginine, ornithine, cysteine, tyrosine, and their combination.
3. structured abrasive article according to claim 2, wherein said amino acid is L-PROLINE, one of L-arginine and their combination.
4. structured abrasive article according to claim 1, wherein said acid complexing agent forms about 0.1 % by weight to 3.0 % by weight of described structured abrasive layer.
5. structured abrasive article according to claim 1, wherein said abrasive material also comprises Second addition, and wherein said Second addition is selected from nonionic surface active agent, silicon surface active agent, fluorine-containing surfactant, water-soluble polymer and their combination.
6. structured abrasive article according to claim 5, wherein said Second addition is nonionic surface active agent.
7. structured abrasive article according to claim 6, wherein said nonionic surface active agent is polyethers nonionic surface active agent.
8. structured abrasive article according to claim 6, wherein said nonionic surface active agent forms about 0.1 % by weight to 3.0 % by weight of described structured abrasive layer.
9. structured abrasive article according to claim 6, wherein said nonionic surface active agent is selected from: the primary alcohol ethoxylate of straight chain, secondary alcohol ethoxyl compound, the secondary alcohol ethoxyl compound of side chain, octylphenol ethoxylate, acetylene series primary alcohol ethoxylate, acetylene series uncle diol ethoxylate, alkane diol, hydroxy-end capped epoxy ethane-epoxy propane random copolymer, fluoroaliphatic polymer ester, and their combination.
10. structured abrasive article according to claim 6, wherein said nonionic surface active agent has the hydrophile-lipophile balance value of about 4 and 20.
11. structured abrasive articles according to claim 6, wherein said nonionic surface active agent has the hydrophile-lipophile balance value at least about 10.
12. structured abrasive articles according to claim 1, wherein said polymeric binder comprises acrylic polymer.
13. structured abrasive articles according to claim 1, also comprise the attachment intermediate layer be directly bonded on described second first type surface.
The method of 14. 1 kinds of grinding work-pieces, comprising:
Make structured abrasive article at least partially with the surface contact of workpiece; And
At least one in described workpiece or described structured abrasive layer is moved relative to another one, and to grind the described surface of described workpiece at least partially, wherein said structured abrasive article comprises:
Backing, described backing has the first opposed first type surface and the second opposed first type surface; With
Structured abrasive layer, described structured abrasive layer to be arranged on described first first type surface and to be fixed to described first first type surface, and wherein said structured abrasive layer comprises:
Polymeric binder,
Be dispersed in the abrasive grain in described binding agent; With
Be dispersed in the first additive in described binding agent, wherein said first additive is multiple tooth acid complexing agent,
Wherein said multiple tooth acid complexing agent comprises amino acid, by amino acids formed dipeptides and their combination.
15. methods according to claim 14, wherein said workpiece comprises the dielectric containing wafer surface.
16. methods according to claim 14, wherein said acid complexing agent forms about 0.1 % by weight to 3 % by weight of described structured abrasive layer.
17. methods according to claim 14, wherein said amino acid is selected from: alanine, proline, glycine, histidine, lysine, arginine, ornithine, cysteine, tyrosine, and their combination.
18. methods according to claim 14, wherein said abrasive material also comprises Second addition, and wherein said Second addition is selected from nonionic surface active agent, silicon surface active agent, fluorine-containing surfactant, water-soluble polymer and their combination.
19. methods according to claim 18, wherein said Second addition is nonionic surface active agent.
20. methods according to claim 19, wherein said nonionic surface active agent is polyethers nonionic surface active agent.
21. methods according to claim 19, wherein said nonionic surface active agent is selected from: the primary alcohol ethoxylate of straight chain, secondary alcohol ethoxyl compound, the secondary alcohol ethoxyl compound of side chain, octylphenol ethoxylate, acetylene series primary alcohol ethoxylate, acetylene series uncle diol ethoxylate, alkane diol, hydroxy-end capped epoxy ethane-epoxy propane random copolymer, fluoroaliphatic polymer ester, and their mixture.
22. methods according to claim 19, wherein said nonionic surface active agent forms about 0.1 % by weight to 3.0 % by weight of described structured abrasive layer.
23. methods according to claim 19, wherein said nonionic surface active agent has the hydrophile-lipophile balance value about between 4 and 20.
CN201380049086.0A 2012-09-21 2013-09-17 Incorporating additives into fixed abrasive webs for improved CMP performance Pending CN104822495A (en)

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Application publication date: 20150805