WO2008065930A1 - Corps chauffant en feuille - Google Patents

Corps chauffant en feuille Download PDF

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Publication number
WO2008065930A1
WO2008065930A1 PCT/JP2007/072433 JP2007072433W WO2008065930A1 WO 2008065930 A1 WO2008065930 A1 WO 2008065930A1 JP 2007072433 W JP2007072433 W JP 2007072433W WO 2008065930 A1 WO2008065930 A1 WO 2008065930A1
Authority
WO
WIPO (PCT)
Prior art keywords
heating element
heater
resin
resin layer
layer
Prior art date
Application number
PCT/JP2007/072433
Other languages
English (en)
Japanese (ja)
Inventor
Kinya Miyashita
Yoshiaki Tatsumi
Original Assignee
Creative Technology Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Creative Technology Corporation filed Critical Creative Technology Corporation
Priority to JP2008546953A priority Critical patent/JPWO2008065930A1/ja
Priority to TW097119321A priority patent/TWI504307B/zh
Publication of WO2008065930A1 publication Critical patent/WO2008065930A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Definitions

  • the present invention relates to a heater for heating a semiconductor wafer or glass substrate in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, an ion doping apparatus, a plasma immersion apparatus, an exposure apparatus, and a plasma processing apparatus used for etching and thin film formation. It is about. Background art
  • the temperature of a semiconductor wafer to be processed is raised to a certain temperature, maintained at a certain temperature during processing, and then at room temperature. Some require temperature control to lower the temperature to This is because, depending on the temperature, the chemical or physical reaction rate of the object to be processed and plasma or ions, some! /, Etc., vary with other reactants. In general, chemical and physical reactions are promoted as the temperature increases.
  • the means for raising the temperature is generally a means of passing an electric current through an electrode made of a metal having electrical resistance, causing the electrode to generate heat by its Joule heat generation, and transferring the heat to the object to be processed. This is because temperature control and heat generation can be performed relatively easily. Since the treatment of wafers and the like is usually performed in a vacuum, it is also common to shorten the temperature drop time of the object to be treated by using it together with a cooling system using refrigerant circulation. If there is a vacuum gap between the workpiece and its mounting part, heat transfer due to convection and heat conduction is eliminated and only radiation is emitted, so natural cooling takes a lot of time to lower the temperature, and the throughput of the equipment This is because of lowering.
  • the temperature control of the object to be processed depends on the semiconductor manufacturing process, it may require ⁇ 1 ° C or less throughout the entire area.
  • the diameter of a silicon wafer tends to be as large as 300 mm, so it is quite difficult to raise the entire wafer at a uniform temperature.
  • the temperature is not managed well by heat conduction alone because the part on which the wafer is placed is not completely flat and has irregularities in the manufacturing process of about several tens of meters.
  • the insulation of the heater is made of ceramic and is The heat capacity of the mounting part including the power heater, which is used in many cases that can withstand the thermal shock of temperature rise and cooling, is increased. This is because the entire mounting portion is heated by a heater and the temperature rise of the object to be processed is made uniform by the force and other radiation.
  • Japanese Unexamined Patent Application Publication No. 2004-179058 discloses a sheet heater used for cooking utensils and carpets.
  • the heating element is made of a metal thin film with a relatively strong tensile strength, such as stainless steel.
  • Japanese Patent Laid-Open No. 2003-217800 discloses a heater that can be used in a semiconductor manufacturing process and can be heated to a high temperature of 350 ° C.
  • Japanese Patent Application Laid-Open No. 8-180962 discloses a heater that improves heat transfer by strengthening the adhesion between a metal heating element and an insulating layer covering the metal heating element.
  • Japanese Patent Application Laid-Open No. 63-72085 discloses a heating element whose main component is an alloy but whose surface is covered with aluminum.
  • Japanese Laid-Open Patent Publication No. 2002-8984 discloses a ceramic heater for a semiconductor manufacturing process in which aluminum nitride is used as an insulator and a heating element is provided therein.
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2004-179058
  • Patent Document 2 Japanese Patent Laid-Open No. 2003-217800
  • Patent Document 3 Japanese Patent Laid-Open No. 8-180962
  • Patent Document 4 JP-A 63-72085
  • Patent Document 5 Japanese Patent Application Laid-Open No. 2002-8984
  • the first problem is to efficiently transfer the heat from the heater to the workpiece such as a wafer.
  • the insulator containing the heating element is ceramic
  • the ceramic surface is hard and the surface has fine irregularities, so there is a disadvantage that almost no heat conduction due to contact with the object to be processed can be expected.
  • the insulator containing the heating element is a resin
  • the resin is more flexible than ceramic, so it may be familiar to the surface of the object to be treated to some extent, but the thickness of the electrode layer that forms the heating element It is unavoidable that appears on the surface of the insulator and becomes uneven.
  • the second problem is to manufacture the heater at a low cost. It is necessary to use a high-priced material such as ceramic as the insulating material, and to reduce the volume of the mounting part that holds the workpiece and includes the heater. If the insulator is ceramic, it is difficult to make it thin, so the volume increases and the material cost is high. If the volume of the mounting portion is reduced, the heat capacity is also reduced, so the specifications of the peripheral components of the heater, for example, the power source of the heating element can be reduced, and the cost can be reduced. The same applies to the specifications of the cooling system of the mounting section.
  • the invention according to claim 1 is the invention according to claim 1, wherein in the heater having a heat generating element comprising a resin as an insulator and an aluminum metal force, the unevenness of the resin surface is 1 m or less. This is a sheet heater. This is because if the surface roughness of the resin is 1 ⁇ m or less, it can be expected that the ratio of contact with the surface of the object to be processed will be sufficiently large due to the flexibility of the resin.
  • the material of the heating element in the aluminum metal that the volume resistivity is in the range of 2 ⁇ 7 X 10- 6 ⁇ 3. 5 X 10- 6 ⁇ 'cm
  • the reason for forming the heating element with aluminum metal is that it is necessary to form the volume resistivity with good reproducibility on the thin-film heating element.
  • the volume resistivity of normal aluminum butter is 2.7 X 10_ 6 Q 'cm at room temperature.
  • the higher one is advantageous because the heating value increases when the same current flows. It is.
  • the heating element can be solid or put in an appropriate shape.
  • the film may be formed and then etched after the entire surface, or the mask may be formed first and then only the necessary part may be formed.
  • the invention according to claim 3 is the sheet heater according to claim 1, wherein the aluminum metal heating element has a thickness of 1 ⁇ m or less.
  • the formation method is important. By performing the vapor deposition method, it is possible to form an extremely thin aluminum metal film of 0.1 m to l ⁇ m with good reproducibility. By setting the thickness of the heating element to 1 ⁇ m or less, the unevenness appearing in the electrically insulating resin layer covering this is It becomes relatively easy to make it below m.
  • Other means for forming an aluminum metal film include an ion plating method and a plating method.
  • the invention according to claim 4 is the sheet heater according to claim 1, characterized in that a resin gas barrier layer is provided on at least one side of the aluminum metal heating element.
  • a resin gas barrier layer is provided on at least one side of the aluminum metal heating element.
  • This material has a low oxygen permeability of about two orders of magnitude compared to polyimide.
  • TORAY's Mikutron registered trademark of TORAY
  • Others TEIJIN ALAMICA registered trademark of TEIJIN
  • Other suitable resins include polyvinylidene chloride, ethylene butyl alcohol copolymer, polyatylonitrile, resin group polyamide, polyethylene terephthalate, polyphenylene sulfide, polychlorinated butyl, and the like.
  • the thickness of the gas barrier layer is in the range of 10 m to 100 m and is determined in consideration of the gas penetration rate and operating temperature.
  • the invention according to claim 5 is the sheet-like heater according to claim 1, wherein a metal heat dispersion layer is provided on at least one surface side of the aluminum metal heating element.
  • the heat from the heating element needs to be uniformly transmitted to the heater surface. If the shape of the heating element is not on the whole surface of the heater but has a pattern, there will be a part without the heating element directly under the heater surface.
  • at least one heat dispersion layer is provided between the heat generating element and the heater surface layer to make the heat uniform from the heat generating element to the heater surface.
  • the heat dispersion layer is a metal layer of 5 to 30 m, and the material is preferably high thermal conductivity! / Aluminum or copper.
  • the invention of claim 6 is characterized in that the thickness of the resin insulation on the mounting side of the heating element made of aluminum metal is 50 to 100 m. It is a sheet heater.
  • the maximum thickness of the heating element is 1 in. If it is not thicker than the thickness of the heating element, the unevenness caused by the thickness of the heating element cannot be absorbed. If the thickness of the resin insulator is 50 to 100 times the thickness of the heating element, the unevenness on the surface of the insulator can be suppressed to 1 ⁇ m or less even if there are irregularities for the thickness of the heating element.
  • the thickness of the insulator is 50 Hm or less, the unevenness of the insulator surface is 1 ⁇ m or more, and when the thickness is 100 m or more, the thermal resistance from the heating element to the surface on which the workpiece is placed becomes too large.
  • the disadvantage is that it takes longer time.
  • the resin used for electrical insulation of the heating element is polyimide, aramid, polyamide, polyethylene terephthalate, polyetherimide, polyethylene naphthalate, polyphenylene sulfide, polyethersulfine, poly 2.
  • Polyimide, aramid, polyamide, polyethylene terephthalate, polyetherimide, polyethylene naphthalate, polyphenylene sulfide, polyethersulfine, and polymethylolene pentene each have sufficient electrical insulation properties and can be used at high temperatures of around 200 ° C. Yes, it is possible.
  • polyimide and aramid are preferable materials because of their excellent chemical corrosion resistance.
  • the unevenness of the surface of the insulating layer of the resin covering the heating element can be 1 m or less, it becomes possible to effectively transfer heat from the heating element to the object to be processed. It is possible to raise the temperature of the entire treatment to a uniform temperature in a short time.
  • the aluminum heating element prevents the entry of oxygen and water vapor from the surroundings by the gas noble layer, its oxidation is suppressed and the life is extended.
  • the metal heat dispersion layer inside the heater even when the heater electrode has a pattern and does not have a heater electrode directly under the heater surface, the temperature uniformity of the heater surface is maintained.
  • FIG. 1 shows a first embodiment of a sheet heater according to the present invention
  • FIG. 1 (a) is a schematic plan view
  • FIG. 1 (b) is a schematic cross-sectional configuration diagram. is there.
  • FIG. 2 shows a second embodiment of the sheet heater according to the present invention
  • FIG. 2 (a) is a schematic plan view
  • FIG. 2 (b) is a schematic cross-sectional configuration diagram.
  • FIG. 3 shows a third embodiment of the sheet heater of the present invention, and is a schematic view of the plane (a) of FIG.
  • FIG. 3B is a schematic configuration diagram of a cross section.
  • the first resin layer 3 and the second resin layer 6 mainly form a gas barrier layer.
  • the first resin layer 3 and the second resin layer 6 were both made of aramid (TORAY Mictron (registered trademark of TORAY)) having excellent gas barrier properties.
  • aramid TORAY Mictron (registered trademark of TORAY)
  • Aluminum was deposited on the second resin layer 6 by vapor deposition to a thickness of 1 inch using a mask in a pattern as shown in FIG.
  • the second adhesive layer 4 is sandwiched between the second resin layer 6 and the first resin layer 3 with the heating element 5 inside, and the first adhesive layer is further interposed between the first resin layer 3 and the substrate 1.
  • the sheet-like heater 50 of the first example was completed by simultaneously bonding the aluminum substrate 1 to the aluminum substrate 1 at a processing temperature of 150 ° C. and a pressure of 2 MPa.
  • Base 1 has a thickness of 10mm and a diameter of 298mm.
  • the first adhesive layer 2 and the second adhesive layer 4 are both 20 m thick thermoplastic polyimide.
  • the heating element 5 is connected to a DC or AC power source. Lead wires are connected to both ends of the heating element (not shown).
  • the second resin layer 6 mainly forms a gas noble layer.
  • the third resin layer 7 and the fourth resin layer 8 use a relatively flexible polyimide resin. This is because the surface irregularities are minimized by using a flexible material for these layers.
  • the second resin layer 6 is gas burrs.
  • a fourth resin layer 8 having the same diameter and the same thickness as the third resin layer 7 having a diameter of 298 mm and a thickness of 50 m is prepared. Further, a second resin layer 6 having a diameter of 298 mm and a thickness of 25 m is prepared. The thickness of the fourth resin layer 8 is 50 m.
  • Aluminum is deposited on the fourth resin layer 8 by vapor deposition to a thickness of 1 m using a mask as shown in Fig. 2 to generate heat.
  • Body 5 Next, the second adhesive layer 4 is sandwiched between the fourth resin layer 8 and the third resin layer 7 with the heating element 5 inside, and the second resin layer 6 is placed on the opposite side of the fourth resin layer 8.
  • the first adhesive layer 2 is sandwiched between the third resin layer 7 and the base 1, and simultaneously bonded to the aluminum base 1 at a processing temperature of 150 ° C and a pressure of 2 MPa, and the sheet of the second embodiment Shaped heater 51 was completed.
  • Base 1 has a thickness of 10 mm and a diameter of 298 mm.
  • Both the first adhesive layer 2 and the second adhesive layer 4 are thermoplastic polyimide having a thickness of 20 m.
  • the heating element 5 is connected to a DC or AC power source, but this was done by connecting lead wires (not shown) to both ends of the heating element.
  • the second resin layer 6 mainly forms a gas noble layer.
  • the sheet heater of this embodiment further has a heat dispersion layer 10.
  • the third resin layer 7 and the fourth resin layer 8 use relatively flexible polyimide resin. This is for the same reason as in the second embodiment.
  • the second resin layer 6 used was aramid (TORAY Mictron (registered trademark of TORAY)) with excellent gas barrier properties.
  • a third resin layer 7 and a fourth resin layer 8 having a diameter of 298 mm and a thickness of 50 m are prepared.
  • One side of the fourth resin layer 8 is pre-coated with a 25-thick copper foil.
  • a second resin layer 6 having a diameter of 298 mm and a thickness of 25 m is prepared.
  • the thickness of the fourth resin layer 8 is 50 m, and aluminum is deposited on one side of the fourth resin layer 8 by vapor deposition to form a film with a pattern as shown in Fig. 3 to a thickness of 1 ⁇ m. Heater 5 was obtained. Furthermore, the copper foil on the opposite surface was concentrically removed by etching only in the surrounding area to obtain a heat dispersion layer 10. Next, the second adhesive layer 4 is sandwiched between the fourth resin layer 8 and the third resin layer 7 with the heating element 5 inside, and the second resin layer 6 is placed on the opposite side of the fourth resin layer 8.
  • first adhesive layer 2 is sandwiched between the third resin layer 7 and the substrate 1, and simultaneously bonded to the aluminum substrate 1 at a processing temperature of 150 ° C and a pressure of 2 MPa.
  • Base 1 has a thickness of 10mm and a diameter of 298mm.
  • the first adhesive layer 2 and the second adhesive layer 4 are both 20 and 1 m thick thermoplastic polyimide, and the third adhesive layer 9 is 30 ⁇ m thick thermoplastic polyimide.
  • the heating element 5 has a direct current! /, A force for connecting an AC power source. This was done by connecting lead wires (not shown) to both ends of the heating element.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Heating Bodies (AREA)
  • Resistance Heating (AREA)

Abstract

La présente invention concerne un corps chauffant en feuille grâce auquel un objet de traitement utilisé dans un appareil de fabrication de semiconducteur ou son équivalent est chauffé à faible coût avec un délai d'augmentation de température plus court et plus uniforme. Une couche d'isolation électrique est formée en empilant une première et une seconde couche adhésive (2, 4) et une première et une seconde couche de résine (3, 6) sur un substrat (1) et en couvrant un corps de génération de chaleur (5) avec ces couches. L'inégalité sur les surfaces des couches d'isolation (2-6) est de 1 μm ou moins. Le corps de génération de chaleur (5) est formé d'aluminium. La première et la seconde couche de résine (3, 6) configurent une couche barrière contre les gaz. En outre, une couche de dispersion thermique est formée pour rendre la chaleur uniforme.
PCT/JP2007/072433 2006-11-30 2007-11-20 Corps chauffant en feuille WO2008065930A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008546953A JPWO2008065930A1 (ja) 2006-11-30 2007-11-20 シート状ヒータ
TW097119321A TWI504307B (zh) 2006-11-30 2008-05-26 片狀加熱器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-357011 2006-11-30
JP2006357011 2006-11-30

Publications (1)

Publication Number Publication Date
WO2008065930A1 true WO2008065930A1 (fr) 2008-06-05

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PCT/JP2007/072433 WO2008065930A1 (fr) 2006-11-30 2007-11-20 Corps chauffant en feuille

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JP (1) JPWO2008065930A1 (fr)
TW (1) TWI504307B (fr)
WO (1) WO2008065930A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013080122A1 (fr) * 2011-12-01 2013-06-06 Koninklijke Philips Electronics N.V. Conception structurale et procédé pour améliorer la modulation de température et la consommation d'énergie d'un émetteur d'infrarouges
JP2021522649A (ja) * 2018-04-17 2021-08-30 ワトロー エレクトリック マニュファクチュアリング カンパニー オールアルミニウムヒーター

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11825570B2 (en) 2018-11-16 2023-11-21 Industrial Technology Research Institute Heater package

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JPS6372085A (ja) * 1986-09-12 1988-04-01 日立電線株式会社 面状発熱体およびその製造方法
JP2005183272A (ja) * 2003-12-22 2005-07-07 Mitsui Eng & Shipbuild Co Ltd 膜状ヒータとその製造方法
JP2006278202A (ja) * 2005-03-30 2006-10-12 Matsushita Electric Ind Co Ltd 高分子発熱体及びその製造方法

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JPH11114299A (ja) * 1997-10-16 1999-04-27 Toshiba Home Techno Corp アイロン
JP2000197290A (ja) * 1998-12-25 2000-07-14 Hitachi Ltd 永久磁石式回転電機及びそれを用いた電動車両
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JP2003217799A (ja) * 2002-01-25 2003-07-31 Nippon Dennetsu Co Ltd 加熱体およびその製造方法
JP2004265654A (ja) * 2003-02-28 2004-09-24 Sukegawa Electric Co Ltd シートヒータとその製造方法
JP2007512665A (ja) * 2003-11-20 2007-05-17 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄膜加熱素子
JP2006140367A (ja) * 2004-11-15 2006-06-01 Sumitomo Electric Ind Ltd 半導体製造装置用加熱体およびこれを搭載した加熱装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6372085A (ja) * 1986-09-12 1988-04-01 日立電線株式会社 面状発熱体およびその製造方法
JP2005183272A (ja) * 2003-12-22 2005-07-07 Mitsui Eng & Shipbuild Co Ltd 膜状ヒータとその製造方法
JP2006278202A (ja) * 2005-03-30 2006-10-12 Matsushita Electric Ind Co Ltd 高分子発熱体及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013080122A1 (fr) * 2011-12-01 2013-06-06 Koninklijke Philips Electronics N.V. Conception structurale et procédé pour améliorer la modulation de température et la consommation d'énergie d'un émetteur d'infrarouges
US10952283B2 (en) 2011-12-01 2021-03-16 Koninklijke Philips N.V. Structural design and process to improve the temperature modulation and power consumption of an IR emitter
JP2021522649A (ja) * 2018-04-17 2021-08-30 ワトロー エレクトリック マニュファクチュアリング カンパニー オールアルミニウムヒーター
JP7379372B2 (ja) 2018-04-17 2023-11-14 ワトロー エレクトリック マニュファクチュアリング カンパニー オールアルミニウムヒーター

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Publication number Publication date
TWI504307B (zh) 2015-10-11
JPWO2008065930A1 (ja) 2010-03-04
TW200950573A (en) 2009-12-01

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