WO2008061602A1 - Procédé et dispositif pour produire un plasma, et utilisations du plasma - Google Patents

Procédé et dispositif pour produire un plasma, et utilisations du plasma Download PDF

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Publication number
WO2008061602A1
WO2008061602A1 PCT/EP2007/009268 EP2007009268W WO2008061602A1 WO 2008061602 A1 WO2008061602 A1 WO 2008061602A1 EP 2007009268 W EP2007009268 W EP 2007009268W WO 2008061602 A1 WO2008061602 A1 WO 2008061602A1
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WO
WIPO (PCT)
Prior art keywords
plasma
shield
workpiece
gas
treatment
Prior art date
Application number
PCT/EP2007/009268
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German (de)
English (en)
Inventor
Christian Buske
Original Assignee
Plasmatreat Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plasmatreat Gmbh filed Critical Plasmatreat Gmbh
Priority to DE202007018327U priority Critical patent/DE202007018327U1/de
Publication of WO2008061602A1 publication Critical patent/WO2008061602A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc

Definitions

  • the invention relates to a method and a device for generating a plasma as well as various applications of this plasma.
  • the prior art discloses methods and apparatus for generating a low pressure plasma for cleaning, pretreatment, and also plasma coating. These are essentially based on the fact that in a low-pressure chamber, a negative pressure is generated.
  • a working gas is deliberately introduced, in which a gas discharge is ignited between two electrodes.
  • the working gas contained in the low pressure chamber which may also be generally a gas mixture, is then excited by the discharge to a plasma.
  • the generated plasma is distributed due to thermal effects within the low pressure chamber.
  • the plasma excitation can also be effected by a microwave field.
  • a so-called atmospheric plasma jet so a plasma jet, which is passed directly into the ambient atmosphere at atmospheric pressure, generated and is directed to a workpiece to be treated.
  • the atmospheric plasma jet is therefore always aimed at only a limited part of the surface of a workpiece, so that for larger surfaces of the plasma jet must be moved relative to the workpiece.
  • a plasma jet is generated by applying a high-frequency high voltage in a nozzle tube between a pin electrode and an electrode in the region of the nozzle opening by means of a non-thermal discharge from the working gas, which emerges from the nozzle opening.
  • This non-thermal plasma jet has no electric sparks at a suitably set flow rate, so that only the high-energy but low-tempered plasma jet leaves the nozzle opening.
  • the characterization of the plasma jet is also referred to as a high electron temperature and a low ion temperature.
  • the plasma jet is generated by means of a corona discharge by an ionization of a working gas, for example. Air.
  • the device consists of a ceramic tube which is surrounded on the outer wall with an outer electrode. With a few millimeters from the inner wall of the ceramic tube, an inner electrode is arranged as a rod. Through the gap between the inner wall of the Keramikrohre ⁇ and the inner electrode, an ionizable gas such as air or oxygen is passed. A high-frequency high-voltage field is applied to the two electrodes, as used in corona pretreatment of films. Through the alternating field, the gas is ionized and exits at the end of the pipe.
  • a disadvantage of the atmospheric plasma jet explained above is the interaction with the surrounding gas, usually air. Because the unexcited gas particles lead to an effective de-excitation of the excited plasma gas, also called quenching. This affects the range and extent of the plasma jet. Thus, the intensity of the atmospheric plasma jet is already reduced after a relatively short range.
  • the present invention is therefore based on the technical problem of improving the effectiveness of the known methods and devices for generating a plasma in a given volume and for the application of such a plasma.
  • the method consists of the two method steps that a plasma jet is introduced into an at least partially surrounded by a shielding treatment room and that the plasma is at least partially distributed in the treatment room, wherein the pressure in the treatment chamber corresponds at least to the ambient pressure.
  • a shield according to the invention ensures that the excited plasma, that is to say the particles of the plasma gas, can interact little or not at all with the ambient atmosphere, in particular the ambient air. Therefore, the quenching described above is reduced and the excitation within the plasma is retained longer. This results in a greater intensity of the plasma within the shield compared to a plasma jet which is introduced into the free ambient atmosphere.
  • the treatment room is preferably completely filled with the plasma gas, but it is sufficient in the context of the present invention that the treatment room is also only partially filled.
  • the plasma source can produce the plasma jet in different ways, as described above with reference to the prior art. Particularly preferred is the generation of the plasma jet by means of a high-frequency high voltage, as has already been described above.
  • the plasma jet is generated by exciting a working gas by means of a high-frequency high voltage, preferably by the high-frequency high voltage, an arc discharge is generated.
  • a gas or gas mixture is used as the working gas, wherein at least one component of the working gas has a long half-life of the excited state.
  • excited state is meant all ionized and excited electronic states of the atoms and molecules.
  • half-life is meant the period of time during which half of the atoms and molecules are either recombined or again in a lower electronic state.
  • long half-life in the context of this specification is meant a half-life which, under given flow conditions in the plasma source and in the shield, allows the excited gas constituents to flow over a distance greater than the simple value of the largest dimension of the shield before they get distracted.
  • the working gas comprises air, nitrogen, forming gas (mixture of nitrogen and hydrogen) or a noble gas, in particular argon or helium.
  • a noble gas in particular argon or helium.
  • a preferred application of the overprint plasma is in the treatment of workpiece surfaces. Therefore, in a preferred application of the overpressure plasma, a workpiece is placed in the shield. For a full-surface cleaning, pretreatment and / or plasma coating is possible.
  • the surface is cleaned of and / or that surface layers are removed and / or that the surface is activated.
  • the cleaning of the surface of contaminants is based, for example, on the fact that with the aid of an aggressive working gas, for example having oxygen, argon, nitrogen, pentane or mixtures thereof, a plasma with high energy is produced which leads to burning or transformation the pollution leads.
  • an aggressive working gas for example having oxygen, argon, nitrogen, pentane or mixtures thereof
  • organic soils such as fats and oils can be removed from the surface of the workpiece and removed.
  • this method is preferred in metallic workpieces or workpieces made of ceramic materials. The method can also be applied to plastics.
  • the de-coating of the surface is based on the fact that the energy of the plasma is coupled into the surface layer and thus leads to melting and evaporation of the layer material.
  • the thus separated and at least partially transferred into the gas phase layer material can then be removed via the gas flow through the outlet openings.
  • Activation of the surface serves to provide the surface with better wettability to liquids after pretreatment.
  • the surface of the workpiece itself remains essentially unchanged. In any case, the aim is to avoid physical or chemical surface changes.
  • the workpiece is subjected to a plasma gas in which a precursor material has already been added during the generation of the plasma jet or later.
  • the precursor material reacts in the plasma propagating in the shield and the workpiece is at least partially coated with the reaction products formed in the plasma from the precursor material.
  • the intense plasma jet can also be used advantageously for plasma coating.
  • the precursor material which may be gaseous, liquid or solid, may be supplied either directly in the shield or inside the plasma source. Within the plasma source, the precursor material can either be supplied to the working gas or in the region of the nozzle opening to the plasma jet.
  • the method and the device known from EP 1230414 are preferably used.
  • the precursor material is supplied to the plasma jet in the region of the nozzle opening after the plasma gas has left the region of the discharge within the nozzle tube.
  • the precursor material then reacts in the plasma jet emerging from the nozzle opening and the resulting reaction products are deposited from the gas phase on impact with the surface of the workpiece.
  • the shield has at least one opening and the plasma and the depleted working gas is discharged via at least one outlet opening arranged in the shield.
  • the shield can be selected in the form of an open funnel, from which the plasma jet introduced at the funnel constriction through the larger outlet opening can flow out.
  • the workpiece that is to be treated by the plasma can then be arranged, for example, in the flow direction before, in or behind the outlet opening.
  • the outlet opening of the shield is smaller than the outlet opening of the plasma source, then the pressure increase within the shield will increase. Because during the introduction of the plasma jet, which always has a higher gas pressure than inside the shield, an overpressure builds up in the shield, which depends on the working gas flow into the shield and on the gas flow through the at least one outlet opening. Thus, there is a balance between the recessed plasma gas together with the remaining part of the non-excited working gas and the gas released. As a result, a plasma with high intensity spreads within the shield. In other words, the plasma is at least partially trapped within the shield.
  • the advantage of the invention is that a working gas is excited under pressures equal to or greater than ambient pressure to a plasma and thus forms an intense plasma jet.
  • the flow conditions through the plasma source and through the outlet openings then determine the overpressure within the shield.
  • the respective pressure ratios and geometries within the shield and the pressure of the working gas used in the plasma source thus essentially influence the distribution of the plasma within the shield.
  • Another advantage of the invention is that due to the overpressure in the shield, the plasma has a longer residence time than is the case with plasma generation under atmospheric pressure in a free environment. The plasma can thus be used for a longer period of time than has been the case in the previously known application of the plasma sources. Compared to the above-mentioned low-pressure plasma application, not only the residence time is longer because the pumping is absent, but also the density and thus the intensity of the plasma are much higher.
  • the shield is formed in two parts, wherein a first part of the shield for receiving at least one workpiece is formed and wherein the first part is moved relative to the second part.
  • the workpiece can be moved within the plasma to improve the uniformity of the plasma treatment.
  • a rotational movement is preferred. It is also possible to move the receiving holders for fixing the workpiece itself relative to the first part of the shield.
  • several smaller workpieces can be contained in a drum, which is rotated in the plasma, so that the workpieces are supplied from all sides with the plasma.
  • a plasma treatment of single or multiple workpieces is possible only in clock mode.
  • the relative movement can be used to move the first part for attaching and removing the at least one workpiece, and then bringing the two parts of the shield into contact with each other.
  • individual cycles of treatment with positive pressure plasma can be performed.
  • a continuous film treatment is also possible if pressure locks are provided at an inlet and an outlet. In contrast to low-pressure plasma applications, the pressure locks are not exposed to a high pressure difference. The treatment of films is therefore also technically simple and thus cost-effective to implement.
  • the use of the plasma in the treatment of workpieces has been described.
  • the plasma can also be used in the treatment of the inner surface of a container, vessel or bottle.
  • the workpiece to be treated is the shield itself. All of the previously described treatments of workpieces can thus also be used in the treatment of the inner surface.
  • the method can be used advantageously.
  • the shield is closed and the recessed plasma treats the inner surface of the shield.
  • the overpressure increases rapidly until it matches the internal pressure of the plasma source and the flow from the plasma source ceases.
  • the pulse is pulsed, the shield filled with plasma, so that short cycle times are achieved.
  • the closed shield can on the one hand be in two parts, wherein the two shielding parts abut each other in the closed state.
  • the shield may be formed as a container, vessel or bottle, to which the plasma source is mounted close fitting.
  • the shield is supplied with a gas to be treated.
  • gas is generally understood to mean any gas or gas mixture.
  • the gas to be treated can be introduced as working gas for generating the plasma jet within the excitation range of the plasma source.
  • the gas can also be supplied to the plasma jet in the region of the outlet opening of the plasma source.
  • the gas may also be introduced separately from the plasma source of the shield, which then mixes with the plasma within the shield.
  • the excitation energy of the plasma is used to cause a reaction of the gas.
  • the reaction products and any remaining residues of the starting gas are then sucked out of the shield and optionally further processed.
  • the advantage of this method is the possibility of being able to regulate the duration of residence and thus the duration of the treatment of the gas within the shield by means of the operating parameters.
  • the method described above can be used in particular for an exhaust gas purification.
  • even larger amounts of exhaust gas can be continuously exposed to the chemical reactions in the shield.
  • the method described above can be developed in an advantageous manner by introducing microwave radiation into at least part of the treatment space through which the plasma flows. Due to its excitation energy, this microwave radiation effects at least partial maintenance of the excited state of the plasma gas within the treatment space. Due to the extended excitation time and the gas flow of the plasma gas, a more uniform, more homogeneous distribution of the excited plasma gas within the treatment space is achieved. The treatment of a workpiece within the treatment room is thereby further improved.
  • the technical problem indicated above is also solved by a device for generating a plasma with a plasma source for generating a plasma jet, with a shield and with an inlet opening arranged in the shield and receiving the outlet of the plasma source.
  • a device for generating a plasma with a plasma source for generating a plasma jet, with a shield and with an inlet opening arranged in the shield and receiving the outlet of the plasma source.
  • Plasma nozzles known from the prior art are predominantly used with the aid of usually automated handling.
  • automatic handling is not possible in every application, be it for technical or economic reasons. Therefore, there is a need for reliable manual handling of the described plasma nozzle.
  • the shield serves as a spacer.
  • the spacer allows the plasma nozzle to be passed over a surface by hand so that a certain minimum distance is maintained.
  • the shield may touch and slide over the surface, or the user may hold the bottom edge of the shield close to the surface without touching it.
  • the shield may be formed in the manner described above, so in particular also serve to generate a Kochnikplasmas. This is not required for this application.
  • the shield itself may include a series of apertures which reduce the shielding effect, if safe manual handling is preferred.
  • shielding is to be understood to the extent that the shielding effect can only be low.
  • the shield may consist of a few struts, which emanate from the plasma nozzle and point in the direction of the surface to be pretreated.
  • spacers would be synonymous. In the sense of a uniform description of the invention, however, the term shielding is selected in the present application.
  • the shield / the spacer on at least one motion sensor which monitors the movement of the nozzle assembly relative to the workpiece surface.
  • the plasma nozzle can be controlled so that the performance of the operation of the plasma nozzle is reduced or switched off.
  • a reduction in performance can be achieved by reducing the flow of the working gas and / or by reducing the electrical power introduced by means of the high-frequency high voltage.
  • the voltage values and / or the pulse lengths of the time-varying voltage (duty cycle) can be reduced.
  • the motion sensors may be in the form of optical and / or mechanical elements, similar to a computer mouse, which measure the relative movement of the shield relative to the surface to be treated.
  • FIG. 1 shows an embodiment of a plasma nozzle, which can be used in the device according to the invention
  • FIG. 2 shows a first embodiment of a device according to the invention for generating a positive pressure plasma and for treating a workpiece
  • FIG. 3 shows a second embodiment of a device according to the invention for generating an overpressure plasma and for treating a workpiece
  • FIG. 4 shows a third exemplary embodiment of a device according to the invention for generating an overpressure plasma and for treating a workpiece
  • FIG. 5 shows a third embodiment of a device according to the invention for generating an overpressure plasma and for treating the inner surface of a container
  • 6 shows a fourth exemplary embodiment of a device according to the invention for generating an overpressure plasma and for treating a workpiece
  • FIG. 5 shows a third embodiment of a device according to the invention for generating an overpressure plasma and for treating the inner surface of a container
  • FIG. 6 shows a fourth exemplary embodiment of a device according to the invention for generating an overpressure plasma and for treating a workpiece
  • Fig. 7 shows a fifth embodiment of a device according to the invention, wherein the shield serves as a spacer
  • a plasma source or plasma nozzle 10 shown in FIG. 1 has a metal nozzle tube 12, which tapers conically to an outlet opening 14. At the end opposite the outlet opening 14, the nozzle tube 12 has a swirling device 16 with an inlet 18 for a working gas, for example for compressed air or nitrogen gas.
  • a working gas for example for compressed air or nitrogen gas.
  • nozzle In Fig. 1, the nozzle is shown with a centered outlet opening. In addition, it is also possible to make the nozzle outlet at an angle and rotatably arranged relative to the housing 12. Thereby, a rotational movement of the outlet 14 is achieved, whereby the plasma is further swirled.
  • a rotary nozzle is known from EP 1 067 829 A2.
  • An intermediate wall 20 of the twisting device 16 has a ring of obliquely in the circumferential direction employed holes 22 through which the working gas is twisted.
  • the downstream, conically tapered part of the nozzle tube is therefore traversed by the working gas in the form of a vortex 24, whose core extends on the longitudinal axis of the nozzle tube.
  • an electrode 26 is arranged centrally, which protrudes coaxially into the tapered portion of the nozzle tube.
  • the electrode 26 is electrically connected to the intermediate wall 20 and the remaining parts of the twisting device 16.
  • the swirl device 16 is electrically insulated from the nozzle tube 12 by a ceramic tube 28. Via the swirl device 16, a high-frequency high voltage, in particular AC voltage or a high-frequency pulsed DC voltage, which is generated by a high-frequency transformer 30, is applied to the electrode 26.
  • the primary voltage is variably adjustable and is for example 300 to 500 V.
  • the secondary voltage can be 1 to 5 kV or more, measured peak-to-peak.
  • the frequency is for example in the order of 1 to 100 kHz and is preferably also adjustable. The frequency can also be set outside the specified values as long as an arc discharge occurs.
  • the swirl device 16 is connected to the high frequency generator 30 via a flexible high voltage cable 32.
  • the inlet 18 is connected via a hose, not shown, to a variable flow rate pressurized working gas source, which is preferably combined with the high frequency generator 30 to form a supply unit.
  • the nozzle tube 12 is grounded.
  • the applied voltage generates a high frequency discharge in the form of an arc 34 between the electrode 26 and the nozzle tube 12.
  • arc is used as a phenomenological description of the discharge, since the discharge occurs in the form of an arc, but the term arc is understood in DC discharges with substantially constant voltage values. Due to the swirling flow of the working gas, however, this arc is channeled in the vortex core on the axis of the nozzle tube 12, so that it branches only in the region of the outlet opening 14 to the wall of the nozzle tube 12.
  • the working gas which rotates in the region of the vortex core and thus in the immediate vicinity of the arc 34 with high flow velocity, comes into intimate contact with the arc and is thereby partially transferred to the plasma state, so that a beam 36 of an atmospheric plasma, such as in the Shape of a candle flame, emerges from the Au ⁇ lassö réelle 14 of the plasma nozzle 10.
  • Fig. 2 shows a first embodiment of a device for generating a plasma, in particular for the treatment of a workpiece.
  • the device has a plasma source 10 previously described with reference to FIG. 1 for generating a plasma jet 36 and a shield 40.
  • the shield 40 is provided with an inlet opening 42 receiving the plasma source 10 and with an outlet opening 43 arranged in the shield 40.
  • the shield 40 in Fig. 2 is a downwardly open funnel.
  • the plasma jet 36 is thus introduced into the shield 40, the plasma is distributed in the shield 40.
  • the distributing plasma is shown within the shield 40 as an irregular dashed line, see FIG. 2.
  • the pressure within the treatment space formed by the shield 40 is at least equal to the ambient pressure. If, in addition, as shown in FIG. 2, a workpiece 48 is arranged in the outlet opening 43, a backflow occurs it can be assumed that the pressure within the shield increases in comparison to the ambient pressure.
  • Fig. 3 shows a second embodiment of a device for generating a plasma, in particular for the treatment of a workpiece, wherein the same reference numerals denote the same elements as in Fig. 2.
  • the shield 40 is provided with an inlet opening 42 receiving the plasma source 10 and with an outlet opening 44 arranged in the shield 40, which is smaller than the outlet opening shown in FIG. 2.
  • the plasma jet 36 is introduced into the shield 40, the plasma spreads in the shield 40, creating an overpressure.
  • the distributing plasma is shown inside the shield 40 as irregular dotted lines, see FIG. 3.
  • the pressure is then released.
  • the magnitude of the overpressure is determined by the flow rate of the working gas through the plasma source and through the flow cross section of the outlet opening 44. It is also possible to provide the outlet opening 44 with a particular controllable pressure relief valve to adjust the overpressure within the shield 40 can.
  • the shield 40 is formed in one piece. However, it is for the treatment of a workpiece advantageous if the shield 40 is formed in two parts. In this case, then serves a first shielding portion 46 of the shield 40 for receiving at least one workpiece 48, including an attachment, not shown, provided for the workpiece 48 is. Instead of a workpiece but also several workpieces can be connected to the first shielding member 46 to allow the simultaneous treatment of a plurality of workpieces.
  • the two-part embodiment of the shield 40 has the advantage that the first shielding part 46 is designed to be movable relative to a second shielding part 50.
  • the first shielding part 46 can be moved by means of adjusting means, for example, to cyclically equip the first shielding part 46 with different workpieces 48 and to treat the workpieces 48 with a positive pressure plasma in clocking mode.
  • means may also be provided for rotating the first shield member so as to move the workpiece 48 within the overprint plasma to further enhance the uniformity of the treatment.
  • FIG. 4 shows a second embodiment of a device according to the invention for producing a plasma and for treating a workpiece 48, in which the same reference numerals denote the same elements as in FIGS. 2 and 3.
  • the first shielding part 46 can be adjusted with adjusting means in the direction perpendicular to FIG. 4.
  • the adjustment marked with the double arrow A is not only the Cyclic arrangement of workpieces 48 in the shield 40, but the adjustment of the first shielding member 46 allows a variable adjustment of the gap 52 and thus the magnitude of the overpressure in the shield 40.
  • the outflow of the plasma gas and the exhausted working gas is shown in Fig. 4 respectively represented by an arrow which passes through the gap 52.
  • Fig. 5 shows a fourth embodiment of a device according to the invention for generating a plasma and for treating the inner surface of a container, in which like reference numerals denote like elements as in Figs. 2, 3 and 4.
  • a bottle represents the shield 40, with an outlet opening 54 provided on the false neck 56 formed by the gap between the plasma nozzle 10 and the inner wall of the bottle neck 56.
  • the plasma gas or depleted working gas emerging as a result of the resulting overpressure then escapes through this outlet opening 54.
  • the inner wall of the bottle 40 represents the surface to be pretreated.
  • an effective cleaning of the bottle and possibly even the application of a protective inner layer by plasma polymerization is possible.
  • Fig. 6 shows an extension of the device, as has been explained with reference to FIG. Therefore, like reference numerals designate like features as already described with reference to FIG.
  • the device has an antenna 60 as means for introducing microwave radiation, which is arranged inside of the shield 40.
  • the microwave radiation emitted by the microwave antenna 60 passes into at least part of the treatment space through which the plasma flows, as a result of which the plasma gas propagating there is further excited.
  • the excited state is maintained for a longer period of time and the plasma gas can spread more uniformly and homogeneously within the treatment space.
  • a better or a faster treatment of the workpiece to be treated 48 is the result.
  • the device has been described primarily in terms of generating a positive pressure plasma, with the shielding being of particular importance.
  • the shield can also serve as a spacer.
  • Fig. 7 shows an embodiment of a device according to the invention, wherein the shield 40 serves as a spacer. Incidentally, the illustration corresponds substantially to the Fig. 2, wherein like reference numerals designate like elements.
  • the shield or the spacer 40 defines a predetermined distance between the inlet opening 42, which represents the origin of the plasma jet, and the surface of the flat workpiece 70. Thus, it is reliably avoided that the plasma jet 36 is kept too close to the surface.
  • a motion sensor 72 is disposed on the shield which controls the relative movement between the shield 40 and the surface of the workpiece 70 determined.
  • the intensity of the plasma jet 36 can be adjusted. This serves to prevent excessive exposure of the plasma jet to the surface.
  • control means for controlling the power of the plasma jet are provided depending on the measured relative speed.
  • the at least one motion sensor 72 is in the form of an optical and / or mechanical element, as is known, for example, from a computer mouse.

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

L'invention concerne un procédé pour produire un plasma, notamment pour traiter une pièce, selon lequel un jet de plasma est introduit dans une chambre de traitement au moins partiellement entourée par une protection, et selon lequel le plasma est au moins partiellement réparti dans la chambre de traitement, sachant que la pression dans la chambre de traitement correspond au moins à la pression environnante. Ce procédé permet de produire un plasma en surpression intensif pour le prétraitement de surfaces. L'invention concerne également un dispositif pour produire un plasma, notamment pour traiter une pièce, avec une source de plasma (10) pour produire un jet de plasma (36), avec une protection (40) et avec une ouverture d'admission (42) disposée dans la protection (40) et recevant la sortie (14) de la source de plasma (10). La protection peut aussi servir d'écarteur pour une manipulation à la main.
PCT/EP2007/009268 2006-11-23 2007-10-25 Procédé et dispositif pour produire un plasma, et utilisations du plasma WO2008061602A1 (fr)

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DE202007018327U DE202007018327U1 (de) 2006-11-23 2007-10-25 Vorrichtung zum Erzeugen eines Plasmas

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DE102006055668.2 2006-11-23
DE102006055668 2006-11-23
DE102006060941 2006-12-20
DE102006060941.7 2006-12-20

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CN111228649A (zh) * 2020-01-15 2020-06-05 合肥中科离子医学技术装备有限公司 一种强度可调的低温等离子体产生装置

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DE102009006016A1 (de) 2009-01-23 2010-07-29 Plasma Treat Gmbh Verfahren und Vorrichtung zur Detektion von ionisierbaren Gasen, insbesondere organischen Molekülen, vorzugsweise Kohlenwasserstoffen
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DE102015121252A1 (de) 2015-12-07 2017-06-08 Plasmatreat Gmbh Vorrichtung zur Erzeugung eines atmosphärischen Plasmastrahls und Verfahren zur Behandlung der Oberfläche eines Werkstücks
DE102015121253A1 (de) * 2015-12-07 2017-06-08 Plasmatreat Gmbh Vorrichtung zum Erzeugen eines atmosphärischen Plasmastrahls zur Behandlung der Oberfläche eines Werkstücks

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