WO2008054240A1 - Manipulateur de croissance pour chambre à vide destiné à la croissance d'hétérostructures semi-conductrices - Google Patents

Manipulateur de croissance pour chambre à vide destiné à la croissance d'hétérostructures semi-conductrices Download PDF

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Publication number
WO2008054240A1
WO2008054240A1 PCT/RU2007/000087 RU2007000087W WO2008054240A1 WO 2008054240 A1 WO2008054240 A1 WO 2008054240A1 RU 2007000087 W RU2007000087 W RU 2007000087W WO 2008054240 A1 WO2008054240 A1 WO 2008054240A1
Authority
WO
WIPO (PCT)
Prior art keywords
tubular element
hollow tubular
vacuum chamber
manipulator
elements
Prior art date
Application number
PCT/RU2007/000087
Other languages
English (en)
Russian (ru)
Inventor
Alexei Nikolaevich Alexeev
Dmitry Arkadievich Baranov
Vladislav Alexeevich Vasiliev
Original Assignee
'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited filed Critical 'nauchnoe I Tekhnologicheskoe Oborudovanie' Limited
Priority to DE212007000078U priority Critical patent/DE212007000078U1/de
Publication of WO2008054240A1 publication Critical patent/WO2008054240A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the utility model relates to the technique used in the growth of thin films of semiconductors by molecular beam epitaxy.
  • the manipulator comprises a rod with a substrate holder at the lower end.
  • a heater is mounted on the rod above the substrate holder.
  • the holder can rotate relative to the longitudinal axis of the rod, GB 21817447 A.
  • the disadvantage of this device is the lack of means for vertical movement of the substrate holder, which complicates the manipulation of the substrate and affects the quality of the grown semiconductor heterostructures.
  • a growth manipulator of a vacuum chamber for growing semiconductor heterostructures placed in a vacuum chamber including a housing and a cover.
  • the growth arm contains a rod with a heater at the lower end.
  • the rod is installed inside the hollow tubular element and mates with it through bearings.
  • the hollow tubular element is equipped with a substrate holder, as well as a vertical reciprocating drive, made in the form of a bellows.
  • the bellows is equipped with a mechanism for compressing and stretching it.
  • the substrate holder is installed with the possibility of capture and release in the gripping mechanism, including L-shaped consoles, horizontal elements of which are made with the possibility of placing the substrate holder on them, and their vertical elements are attached with their upper ends to the disk with a Central hole.
  • the hollow tubular element is passed through this hole and is equipped with a mechanism for its rotation.
  • a carriage is attached along the contour of the central hole, provided with rollers pressed against the outer surface of the hollow tubular element, EP 92117113.8 A, publication NO 529687 A2.
  • the objective of this utility model is to provide the ability to adjust the distance limits between the heater and the substrate, which allows the use of a growth manipulator in vacuum chambers of various sizes; in addition, the task of simplifying and reducing the cost of the design of the device.
  • this problem is solved due to the fact that in a growth manipulator of a vacuum chamber for growing semiconductor heterostructures placed in a vacuum chamber including a housing and a lid containing a rod with a heater at the lower end, a hollow tubular element, a substrate holder, and the rod is installed inside the hollow tubular element, and the substrate holder is installed with the possibility of its capture and release in the gripping mechanism, including L-shaped consoles, horizontal elements of which are made with the possibility of placing a substrate holder on them, and their vertical elements are attached with their upper ends to the disk with the central hole, the hollow tubular element is passed through the central hole of the disk to which a carriage is attached along the contour of the central hole, provided with rollers pressed against the outer surface of the hollow tubular element , new is that on the inner surface of the lid of the vacuum chamber are made with the possibility of abutment in them carriage height-adjustable stops on the outer surface of the logo of the tubular member reinforced with the possibility of abutment of roller
  • FIG.1 is a longitudinal section of the device; figure 2 is a section A-A in figure 1.
  • the growth manipulator of the vacuum chamber for growing semiconductor heterostructures is placed in the vacuum chamber, which includes a housing 1 and a cover 2.
  • the growth manipulator comprises a rod 3 with a heater 4 mounted on its lower the end.
  • the rod 3 is installed inside the hollow tubular element 5.
  • the holder 6 of the substrate 7 is installed with the possibility of its capture and release in the gripping mechanism, including L-shaped consoles 8.
  • the horizontal elements of the consoles 8 are made with the possibility of placing on them the holder 6 of the substrate 7, and their vertical elements attached to the upper ends of the disk 9 with a central hole 10.
  • the hollow tubular member is passed through the hole 10. by the disk 9 to the contour of the central opening 10 is fixed carriage H 5 provided with rollers 12. In a particular Prima there are 4 pairs of rollers 12.
  • the rollers 12 are pressed against the outer surface of the hollow tubular element 5.
  • the carriages 11 are mounted with the possibility of abutment in them, the height-adjustable stops 13.
  • the stops 13 are screws screwed into cover 2.
  • stops 14 are fixed with the possibility of abutment of the rollers 12 on them.
  • the stops 14 are made in the form of a split ring with screws oh screed.
  • a disk 15 is attached to the lower end of the hollow tubular element 5 with a central hole 16 and holes 17 made on its periphery.
  • a rod 3 is passed into the central hole 16, and vertical elements of the L-shaped consoles are passed into the holes 17. Between the disk 9 attached to the L-shaped consoles and the disk 15 attached to the hollow tubular element, elastic elements are placed, in a specific example of the spring 18.
  • the holder 6 with the substrate 7 is inserted into the housing 1 of the vacuum chamber and extraction from it is carried out through an opening 19 with a cover 20. Maneuvering by a height manipulator in height is performed using a drive 21. Evaporation of materials for growing a semiconductor heterostructure on a substrate 7 occurs using sources 22.
  • the operation of the device is as follows. Using the drive 21 raise the growth arm. At a certain point, the carriage 11 abuts against the stops 13, and the rollers 12 roll down the hollow tubular element 5, while the springs 18 are compressed. The distance between the heater 4 and the horizontal elements of the L-shaped consoles 8 increases. Upon reaching the holder 6 required for insertion with the substrate 7, the values of this distance stop the rise of the growth manipulator; remove the lid 20 and insert the holder 6 with the substrate 7 into the housing 1 of the vacuum chamber manually or by mechanical means through the hole 19, bring the holder 6 to the L-shaped consoles 8 and put the holder on their horizontal elements. Close the hole 19 with the cover 20. Using the drive 21 lower the growth arm.
  • the springs 18 are straightened, and the rollers 12 roll up the hollow tubular element 5 until they reach the stops 14; carriage 1 1 stops.
  • a predetermined distance is established from the holder 6 with the substrate 7 to the sources 22.
  • the substrate 7 mounted in the holder 6 is heated by the heater 4 and the process of growing a semiconductor heterostructure is started.
  • the growth arm is lifted using the drive 21.
  • the carriage 11 abuts against the stops 13, and the rollers 12 roll down the hollow tubular element 5, and the springs 18 are compressed.
  • the cover 20 is removed and removed through the hole 19 manually or by mechanical means holder 6 with a substrate 7 from the housing 1 of the vacuum chamber. After that, close the outlet 19 of the housing 1 of the vacuum chamber with a cover 20.
  • the growth manipulator of the vacuum chamber for growing semiconductor heterostructures is manufactured in the factory using conventional equipment and known materials, which determines, according to the applicant, its compliance with the criterion of “intended applicability)) (IA).

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

L'invention concerne un manipulateur de croissance pour chambre à vide destiné à la croissance de films minces semi-conducteurs par procédé d'épitaxie par jets moléculaires. Le manipulateur est monté dans une chambre à vide qui comprend un boîtier (1) et un couvercle (2). Le manipulateur comprend une tige (3) avec un réchauffeur (4) à son extrémité inférieure, un élément tubulaire creux (5) et un support (6) du substrat (7). La tige est disposée à l'intérieur de l'élément tubulaire. Le support du substrat est monté de façon à saisir et à libérer se dernier au moyen d'un mécanisme de saisi qui comprend des consoles en L (8). Les éléments horizontaux des consoles sont réalisés de manière à pouvoir accueillir le support du substrat. Les éléments verticaux des consoles sont fixés par leurs extrémités supérieures à un disque (9) comportant un orifice central (10). L'élément tubulaire creux passe par l'orifice central du disque. Un chariot (11) est monté sur le disque en suivant le contour de l'orifice central. Ce chariot est muni de rouleaux (12) comprimés contre la surface externe de l'élément tubulaire. La surface interne du couvercle comporte des butées réglables en hauteur (13), et la surface externe de l'élément tubulaire comporte des butées déplaçable en hauteur (14). A l'extrémité inférieure de l'élément tubulaire on a fixé un disque (15) avec un orifice central (16) et des orifices sur la périphérie. La tige passe par l'orifice central (16), et les éléments verticaux des consoles passent par les orifices (17). Entre le disque (9) et le disque (15) on a monté des éléments souples (18). Le manipulateur peut être utilisé dans des chambres à vide de dimensions différentes.
PCT/RU2007/000087 2006-10-31 2007-02-22 Manipulateur de croissance pour chambre à vide destiné à la croissance d'hétérostructures semi-conductrices WO2008054240A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE212007000078U DE212007000078U1 (de) 2006-10-31 2007-02-22 Züchtungsmanipulator

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2006138916 2006-10-31
RU2006138916 2006-10-31

Publications (1)

Publication Number Publication Date
WO2008054240A1 true WO2008054240A1 (fr) 2008-05-08

Family

ID=39344499

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU2007/000087 WO2008054240A1 (fr) 2006-10-31 2007-02-22 Manipulateur de croissance pour chambre à vide destiné à la croissance d'hétérostructures semi-conductrices

Country Status (2)

Country Link
DE (1) DE212007000078U1 (fr)
WO (1) WO2008054240A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EA033207B1 (ru) * 2017-07-18 2019-09-30 Общество С Ограниченной Ответственностью "Изовак" Манипулятор вакуумной камеры

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307190A (ja) * 1987-06-09 1988-12-14 Nissin Electric Co Ltd 液面調節機構付分子線源
SU1700113A1 (ru) * 1989-10-27 1991-12-23 Специальное конструкторско-технологическое бюро специальной электроники и аналитического приборостроения СО АН СССР Устройство дл молекул рно-лучевой эпитаксии
EP0529687A2 (fr) * 1988-03-30 1993-03-03 Rohm Co., Ltd. Appareillage d'épitaxie par jets moléculaires
US6270574B1 (en) * 1997-11-15 2001-08-07 Sharp Kabushiki Kaisha Method of growing a buffer layer using molecular beam epitaxy

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6261315A (ja) 1985-09-11 1987-03-18 Sharp Corp 分子線エピタキシ−装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307190A (ja) * 1987-06-09 1988-12-14 Nissin Electric Co Ltd 液面調節機構付分子線源
EP0529687A2 (fr) * 1988-03-30 1993-03-03 Rohm Co., Ltd. Appareillage d'épitaxie par jets moléculaires
SU1700113A1 (ru) * 1989-10-27 1991-12-23 Специальное конструкторско-технологическое бюро специальной электроники и аналитического приборостроения СО АН СССР Устройство дл молекул рно-лучевой эпитаксии
US6270574B1 (en) * 1997-11-15 2001-08-07 Sharp Kabushiki Kaisha Method of growing a buffer layer using molecular beam epitaxy

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EA033207B1 (ru) * 2017-07-18 2019-09-30 Общество С Ограниченной Ответственностью "Изовак" Манипулятор вакуумной камеры

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DE212007000078U1 (de) 2009-06-25

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