WO2008052067A3 - Grain semi-conducteur et couche d'oxyde pour cellules photovoltaïques - Google Patents

Grain semi-conducteur et couche d'oxyde pour cellules photovoltaïques Download PDF

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Publication number
WO2008052067A3
WO2008052067A3 PCT/US2007/082405 US2007082405W WO2008052067A3 WO 2008052067 A3 WO2008052067 A3 WO 2008052067A3 US 2007082405 W US2007082405 W US 2007082405W WO 2008052067 A3 WO2008052067 A3 WO 2008052067A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxide layer
semiconductor
photovoltaic cells
oxide
semiconductor grain
Prior art date
Application number
PCT/US2007/082405
Other languages
English (en)
Other versions
WO2008052067A2 (fr
Inventor
Mariana R Munteanu
Erol Girt
Original Assignee
Applied Quantum Technology Llc
Mariana R Munteanu
Erol Girt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Quantum Technology Llc, Mariana R Munteanu, Erol Girt filed Critical Applied Quantum Technology Llc
Priority claimed from US11/923,036 external-priority patent/US8426722B2/en
Priority claimed from US11/923,070 external-priority patent/US8373060B2/en
Publication of WO2008052067A2 publication Critical patent/WO2008052067A2/fr
Publication of WO2008052067A3 publication Critical patent/WO2008052067A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne des structures photovoltaïques destinées à la conversion de rayonnements solaires en énergie électrique libre. Selon un mode de réalisation particulier, une cellule photovoltaïque comprend un semi-conducteur granulaire et une couche d'oxyde, les grains semi-conducteurs de taille nanométrique étant entourés par une matrice d'oxyde. La couche de semi-conducteur et d'oxyde est disposée entre des couches conductrices d'électrons et de trous. Selon certains modes de réalisation, de multiples couches de semi-conducteur et d'oxyde peuvent être déposées.
PCT/US2007/082405 2006-10-24 2007-10-24 Grain semi-conducteur et couche d'oxyde pour cellules photovoltaïques WO2008052067A2 (fr)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US85422606P 2006-10-24 2006-10-24
US60/854,226 2006-10-24
US85796706P 2006-11-10 2006-11-10
US60/857,967 2006-11-10
US85959306P 2006-11-17 2006-11-17
US60/859,593 2006-11-17
US88101307P 2007-01-17 2007-01-17
US60/881,013 2007-01-17
US11/923,036 US8426722B2 (en) 2006-10-24 2007-10-24 Semiconductor grain and oxide layer for photovoltaic cells
US11/923,036 2007-10-24
US11/923,070 2007-10-24
US11/923,070 US8373060B2 (en) 2006-10-24 2007-10-24 Semiconductor grain microstructures for photovoltaic cells

Publications (2)

Publication Number Publication Date
WO2008052067A2 WO2008052067A2 (fr) 2008-05-02
WO2008052067A3 true WO2008052067A3 (fr) 2008-07-17

Family

ID=39325395

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/082405 WO2008052067A2 (fr) 2006-10-24 2007-10-24 Grain semi-conducteur et couche d'oxyde pour cellules photovoltaïques

Country Status (1)

Country Link
WO (1) WO2008052067A2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201000693D0 (en) * 2010-01-15 2010-03-03 Isis Innovation A solar cell
US20110303904A1 (en) * 2010-05-24 2011-12-15 Sushobhan Avasthi Photovoltaic device and method of making same
GB2484455B (en) * 2010-09-30 2015-04-01 Univ Bolton Photovoltaic cells
LU92800B1 (en) * 2015-08-14 2017-02-14 Forsman White Glas Kermaicus Sarl Transparent low thermal conducting low phonon dynamic polycrystalline encapsulated photo-magneto-electric glass crystallization and methods of manufacturing thereof
CN108376700A (zh) * 2018-02-09 2018-08-07 沈阳工程学院 一种聚苯二甲酸乙二酯衬底异质结构器件及其制备方法
CN114000106A (zh) * 2021-10-15 2022-02-01 九江学院 一种低摩擦系数MoS2基复合固体润滑涂层及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050050289A1 (en) * 2003-08-29 2005-03-03 Raad George B. Method and apparatus for self-timed data ordering for multi-data rate memories and system incorporating same
US20050155641A1 (en) * 2004-01-20 2005-07-21 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
US20060008580A1 (en) * 2000-11-24 2006-01-12 Gabrielle Nelles Hybrid solar cells with thermal deposited semiconductive oxide layer
US6995371B2 (en) * 2003-06-12 2006-02-07 Sirica Corporation Steady-state non-equilibrium distribution of free carriers and photon energy up-conversion using same
US20060086385A1 (en) * 2004-10-20 2006-04-27 Mitsubishi Heavy Industries, Ltd. Tandem thin film solar cell
US7087831B2 (en) * 1999-09-22 2006-08-08 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7087831B2 (en) * 1999-09-22 2006-08-08 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
US20060008580A1 (en) * 2000-11-24 2006-01-12 Gabrielle Nelles Hybrid solar cells with thermal deposited semiconductive oxide layer
US6995371B2 (en) * 2003-06-12 2006-02-07 Sirica Corporation Steady-state non-equilibrium distribution of free carriers and photon energy up-conversion using same
US20050050289A1 (en) * 2003-08-29 2005-03-03 Raad George B. Method and apparatus for self-timed data ordering for multi-data rate memories and system incorporating same
US20050155641A1 (en) * 2004-01-20 2005-07-21 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
US20060086385A1 (en) * 2004-10-20 2006-04-27 Mitsubishi Heavy Industries, Ltd. Tandem thin film solar cell

Also Published As

Publication number Publication date
WO2008052067A2 (fr) 2008-05-02

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