LU92800B1 - Transparent low thermal conducting low phonon dynamic polycrystalline encapsulated photo-magneto-electric glass crystallization and methods of manufacturing thereof - Google Patents

Abstract

The invention relates to a transparent polymeric polycrystalline encapsulated Photo-magneto-electric cell and a method of making the Photo-magneto-electric cell. The Photo-magneto-electric cell device comprises a first, second, and third layer of a glass polycrystalline material matrix laminated together to form a single piece of transparent glass. The first layer is p-type doped, the second layer is enhanced with photo-luminescent, magnetic, and photoconductive compounds, and the third layer is n-type doped. The layers of the polycrystalline material matrix are manufacturing using a series of mixing, milling, and sintering operations.

Description

TITLE "TRANSPARENT LOW THERMAL CONDUCTING LOW PHONON DYNAMIC POLYCRYSTALLINE ENCAPSULATED PHOTO-MAGNETO-ELECTRIC GLASS CRYSTALLIZATION AND METHODS OF MANUFACTURING THEREOF"

BACKGROUND

The present disclosure is generally to a transparent polycrystalline encapsulated photo-magneto-electric cell with low phonon dynamics. Quantum Mechanics discusses the wave-particle duality, which is that elementary particle exhibits the properties of both particles and waves. These particles can have energy (£ - N w) and momentum (P = Nk '). Additionally, so called "elastic waves" (e.g., sound waves) are particles too, and these particles are called phonons. The energy of a phonon (E = N w) and the momentum of a phonon (P = N k) can be described using the same equations for particles above.

[0002] At higher temperatures, at lower temperatures, at higher temperatures, at lower temperatures, and at lower temperatures, atoms are often closer together and do not move around much. For elastic waves, at higher temperatures, the amplitude of the wave (e.g., sound wave) is larger (i.e., more phonons). At lower temperatures, the amplitude is smaller (i.e., less phonons). Thus, at higher temperatures there are more phones and at lower temperatures, there are fewer phones. The average phonon number depends on the temperature T, the frequency of the phonons w, and a fundamental physics constant N and kB.

The band gap effect can be seen in nature, where bright colors that are seen in butterfly wings are the result of naturally occurring periodic microstructures. The periodic microstructure in the butterfly wing results in a photonic band gap. The prevention of light propagation in certain bands causes the light to be reflected back. The reflected light is seen as bright colors.

In chemistry, nuclear physics, and particle physics, inelastic scattering is a fundamental scattering process in which the kinetic energy of an incident particle is not conserved (in contrast to elastic scattering). In an inelastic scattering process, some of the energy particles are lost or increased. Although the term is historically related to the concept of inelastic collision in dynamics, the two concepts are quite distinct; in the total kinetic energy is not conserved. In general, scattering due to inelastic collisions wants to be inelastic, but, since elastic collisions often transfer kinetic energy between particles, scattering due to elastic collisions can also be inelastic, as in Compton scattering.

Compton scattering is the inelastic scattering of a photon by a charged particle, usually an electron. It is called "photon effect" (which may be an X-ray or gamma ray photon), called the "Compton Effect." Part of the photon energy is transferred to the recoiling electron. Inverse Compton scattering thus exists in which a charged particle transfer part of its energy to a photon.

Spintronics or spin transport electronics (also known as spinelectronics or fluxtronics) is the study of the intrinsic spin of the electron. Spintronics is therefore on the associated magnetic moment and the fundamental electronic charge in solid-state devices. A previous area of study included magneto electronics, which differs from spintronics in that spins are manipulated by both magnetic and electrical fields. Giant magnetoresistance (GMR), which is a quantum mechanical magnetoresistance effect, is observed in thin-film structures. In general, the effect of the magnetization of adjacent ferromagnetic layers (low resistance for parallel alignment and high resistance for anti-parallel alignment). The orientation or magnetization direction can be controlled by applying to external magnetic field.

Generally, one of the main applications of GMR is in hard disk drives and microelectromechanical systems (MEMS), however, the present disclosure relates to a polycrystalline formulation for photo-magneto-electric cells, thermal management, and magneto-optical properties of the photo-magneto-electric cells.

[0008] Thermal conduction is the transfer of internal energy by microscopic diffusion and collisions of particles or quasi-particles within a body. The microscopically diffusing and colliding objects include molecules, atoms, and electrons. They transfer disorganized microscopic kinetic and potential energy, which are known as internal energy. Conduction can only take place in an object or material, or between two objects that are in contact with each other. It is distinctly recognizable only when it comes to chemical reactions or differential chemical constituents. In the presence of chemically defined contributing sub-processes, only the flow of internal energy is recognizable, as distinct from thermal conduction. When the process of conduction yield a net flow of energy across a boundary because of a temperature gradient, the process is characterized as a flow of heat.

Heat spontaneously flows from a hotter to a colder body. In the absence of external drivers, temperature differences decay over time, and the bodies approach thermal equilibrium or saturation.

[0010] Thermal radiation is generated by the thermal motion of charged particles in matter. All matter with a temperature greater than absolute zero emission thermal radiation. When the temperature of the body is greater than zero, interatomic collisions cause the kinetic energy of the atoms or molecules to change. These results in charge-acceleration and / or dipole oscillation, which produces electromagnetic radiation, and which broad spectrum of radiation reflects the wide spectrum of energy and accelerations that occur at a single temperature.

Examples of thermal radiation include the visible light and infrared emitted by an incandescent light bulb, the infrared radiation emitted by animals and detectable with an infrared camera, and the cosmic microwave background radiation. Thermal radiation is different from thermal convection and thermal conduction-a person near a raging bonfire feels radiant heating from the fire, even if the surrounding air is very cold.

Greater power densities in ever smaller electronic components represent a major challenge for thermal management of high power electronics. Inadequate cooling impacts on the reliability and service life of semiconductor components. Electronic components often fail because of damage resulting from thermal or thermal factors. These issues are particularly relevant to the development of high performance semiconducting electronic components. Hot water management solutions focus on the high thermal conductivity abilities of heat spreaders and heat. However, these solutions are limited when considering the long term exponential needs of high performance electrical processors. Therefore, there is a need to look beyond the confines of common thermal dynamics.

[0013] Photonic crystals can not support photons lying in the photonic band gap. A traditional photonic band Gap Crystal is a periodic optical nanostructure that affects the motion of photons in much the same way that ionic lattices affect electrons in solids. [0014] Traditionally, multiple junction solar cells split into the electromagnetic or light spectrum into separate bands, respectively band gap. Each junction operates at a voltage proportional to the band gap energy. The output of the multiple band gaps are combined to achieve an accumulative efficiency of the device with each spectral band junction. The multi-layered material junctions are dependent on the efficiency of light penetration to convert light into electricity.

Traditional solar cells absorb sunlight but do not allow the light to pass through the medium to strike the back of the human eye. These traditional solar cells have been developed in several building applications, but are limited to installations that do not require transparent surfaces.

SUMMARY

The present disclosure relates to a transparent polycrystalline encapsulated photo-magneto-electric cell. By encapsulating semiconducting, photo-luminescent, magnetic, and photoconductive component materials into a polycrystalline glass matrix or a transparent heterogeneous gel suspension, it is possible to produce it in a transparent laminate, because every crystal quenched frit of the material matrix has all the semiconducting crystal structures, energy gaps and band gaps required to harvest photons from the infrared and ultraviolet spectrum to produce electricity.

The present disclosure is generally to a transparent polycrystalline formulation with low thermal conductivity and optical transparency. Therefore, the polycrystalline formulation is not a traditional heat sink or insulator of radiated heat. Instead, the polycrystalline formulation provides thermal self-containment and management of positive energy in the form of light in the ultraviolet and infrared spectrums. Furthermore, the transparent polycrystalline preparation exhibits and unprecedentedly low thermal conductivity (below 10 W / mK at room temperature), which results from the unique atomic structure and relationship between the non-crystalline and crystalline components in a sintered homogeneous or suspended heterogeneous form The results of a major vibrational mismatch between these two components result in special internal refractive moments. Each energetic refractive moment of source or radiated heat energy wants to be absorbed at a low rate. Additionally, the absorbed energy is dissipated and the components of the crystalline structure of the non-crystalline and crystalline components of the polycrystalline structure. Thus, this relationship induces significantly inefficient heat transfer.

[0018] Low frequency thermal energy results in the extremely low thermal conductivity due to the flat phonon dispersion curves (low phonon group velocities). High temperature insulation performance (according to EN ISO 1182. The high temperature insulation performance (according to EN ISO 1182. The invention relates to a high temperature insulation performance ) confirmed this result. For example, when heated to a constant temperature between 7820 C and 7860 C. When heated, the surface temperature of the samples between 7790 C and 8160 C, the temperature 2mm from the surface showed a temperature reduction of 3500 ° C, and the temperature 22mm from the surface exhibited a temperature between 180 ° C and 270 ° C after heating for a 40 minute period.

In common terms, the surface of the polycrystalline material matrix (eg, plastics, wood, cloths, for, etc.) wants to feel warmer. This is because the materials are transferring the heat from your hand easily, so your hand loses heat and feels cooler. Other materials such as insulators do not transfer the heat easily, so your hand still feels warm. At a higher level, the molecules are moving faster than the molecules of the polycrystalline material matrix at room temperature. If you were to feel the heat in the metal, it would decrease the motion of the molecules in your skin and make your skin feel colder. Conversely, if you touch an insulator, even though the molecules in your finger are moving faster than an insulator at room temperature, the finger is transferred to the insulator. Since the motion of the molecules in the skin stays the same, your skin temperature does not appear to change.

[0021] Due to wave interference at the surface and internally via internal refraction dynamics of the polycrystalline formulations, phonon velocities are modified which age the state and density of the polycrystalline structure. This effect creates forbidden energy band gaps for thermal phonons. The material is thermo-conductive and is used to control thermal vibrations.

The technological potential of the disclosed material of the polycrystalline formulation has been exploited in the design and implementation of enhanced thermoelectric energy conversion, high band gap non-silicon based processors, and improved thermal operation with electrical and photovoltaic devices. electrical components. The components may be transparent and exhibit low thermal conductivity, low thermal radiation, highly efficient phonon wave interference, and high thermal band gaps. Additionally, the Disclosure provides the development of high band gap supercomputer as well as radio and optical applications capable of operating at 500GHz, well beyond any other material currently used in RF applications. Unique examples of a photo-magneto-electric cell, which show the rational design and fabrication of nanostructures provides unprecedented opportunities for creating wave-like behavior of heat. These findings lead to a fundamental approach to manipulating the transfer of photoelectrical and thermal energy.

The disclosure of the encapsulated polycrystalline device of a photo-magneto-electric cell with High Temperature Superconducting (HTS) wire melt electric connectors (capable of transition temperatures of up to 77K (-320 ° F or minus -196.15 ° C), Low-temperature superconductors (LTS) electric connectors are currently used in the field of high-voltage superconductors (LTS). They cause and high levels of heat to the components which causes large thermal management issues.

[0024] The present disclosure achieves wide band gap and high thermal conductivity. The materials gain the energy by absorbing heat in a wide-interval, elastic arrangement of atoms, or photons (light) Conversions in the form of positive emission energy. However, phonons (heat) are conducted or radiated as low phonons (heat) energy via the internal refraction dynamics of the disclosure of the polycrystalline formulation.

[0025] The invention relates to a wide band gap of transparent polycrystalline dielectric and low thermal conductivity. The electrical extraction from the polycrystalline material matrix is enabled by the strategic embedding of High Temperature Superconducting (HTS) wire melt electrical connectors (capable of transition temperatures up to 77K (-320 ° F or minus -196.15 ° C).

In the case of High Temperature Superconducting (HTS) wire powder melts in the case of a sintered embodiment of the transparent polycrystalline material matrix with Outer electric connectors (capable of transitioning to temperatures up to 77K (-320 ° F or minus -196.15 ° C)) In another embodiment, more traditional fixed-solid lattices of High Temperature Superconducting (HTS) can be engineered into the structure with Outer electric connectors (capable of transition temperatures up to 77K (-320 ° F or minus -196.15 ° C).

The present disclosure generally relates to a transparent polycrystalline formulation with low phonon dynamics that effectively prevents light and heat transmission while permitting light to propagate through its structure. The structure may be a homogeneous crystal or a heterogeneous suspension in an electrically conductive and transparent polymeric composite. Additionally, an example of what happens in the electronic band gap and support photons lying in the photonic band gap.

The breakdown voltage of an insulator is the minimum voltage that causes a portion of an insulator to. In an example embodiment, the dielectric constant is 7.9 at 100 KHz. Therefore, in order to achieve optimum electrical performance, it is important to provide electrical insulation. High-temperature superconducting (HTS) wire, which may lead to short-circuiting, may or may not be dissipated.

It is imperative to provide high insulation capacitance, which is an advantage of the present disclosure. High-voltage superconducting (HTS) on high-performance superconducting (HTS) connection between the high-band gap semiconductors and the micro and nano-sized lattices of high temperature superconducting (HTS) wire fast helps prevent short circuiting. Additionally, an article on the topic of high-temperature superconducting (HTS) wire to prevent insulation and microelectronics has been published to create a shell against corrosion. The optimum performance in a relationship to a dielectric constants and passivation. For example, the dielectric elements of the polycrystalline material matrix may be viewed as completely filling the space between the capacitor plates or in this case, the space between the high-gap superconducting (HTS) wire with a dielectric in the form of the polycrystalline photonic crystal of the polycrystalline formulation of the present disclosure.

Every material has a dielectric constant k. This is the ratio of the field without the dielectric (Eo) to the net field (E) with the dielectric: κ = Eo / E. Therefore, the dielectric elements of the polycrystalline formulation enable a capacitance by a factor of 7.9 at 100 KHz. Additionally, C = κ Co, where Co is the capacitance with no dielectric between the plates. Thus, completely filling the space between capacitor plates with a dielectric increases the capacitance by a factor of the dielectric constant. By the same token, the capacitance is given by: C = κ so A / d and the capacitance is maximized, and the capacitor plates have large area and are as close as possible. By contrast, if a metal is used instead of an insulator, the field inside the metal would be zero, corresponding to an infinite dielectric constant. The dielectric usually fills the entire space between the capacitor plates, however, and if a metal did it.

The present-or-seen-about, generally known as polycrystalline-formulation-method, is disclosed in combination with photoelectric semiconductor ceramics, as have heavy metal doped glasses and minerals, which have ferroelectric and photovoltaic properties. Magnetic field multipole quadruples of toroidal dipole moments, despite the importance of static toroidal moment in solid-state systems and particle physics has been recognized, the dynamic toroidal dipole moment in classical electromagnetism is less understood. Unlike the conventional dynamic multipoles, the toroidal dipole moment is not included in the standard multipole expansion as Photo-magneto-electric current.

The present disclosure is generally to a transparent polycrystalline encapsulated photo-magneto-electric cell, an artificial sub-wavelength structure, which is not available in natural materials. The photo-magneto-electric current is increased by minority carrier trapping through an increase in diffusion length. Equations may be used for approximate trapping, which takes into account the applied magnetic field as well as ambipolar diffusivity, drift velocity, and lifetime functions. Additionally, it is used in a process of concentration and concentration, and it is used in the concentration concentration. Minority-carrier trapping, recombination, and majority-carrier trapping criteria are well-established for the purposes of shallow and deep traps by properly arranging opposing three-dimensional split ambipolar magnetic rings in the disclosed polycrystalline formulation in a photo-magneto-electric current unit cell. The photo-magneto-electric cell is capable of demonstrating the existence of the toroidal dipolar resonance in the microwave frequency.

Furthermore, the cell's resonance to the optical frequency is improved by scaling down the opposing three-dimensional split ambipolar magnetic split-ring size. The magnetic split-ring is produced by high temperature superconducting (HTS) wire electric connectors (-320 ° F or minus -196.15 ° C) cooling needs of HTS wire offer performance advantages to electric power devices, in multifold double-rings of toroidal dipolar resonance, photoelectric-magnetic cell, which includes metal-dielectric-metal (MIM) transparent photoelectric semiconductor The Shockley-Read Electron and hole lifetimes, and that for recombination centers in the presence of (nonrecombinative) traps; linear and nonlinear steady-state and transient photoconductivity; the photo-magneto-electric effect; and drift of an injected pulse.

Accordingly, in a general embodiment, a transparent heterogeneous gel suspension may include optoelectronic semiconducting materials created using photolithographic surface micromachining or soft lithography microfluidics to form a magnetic photoelectric conversion element including rare earth doped bismuth glasses; a cathode or a first layer and anode or third layer, which contain an electron accepting compound; a second layer with rare earth doped bismuth glasses for enhanced photoluminescence containing an electron-donating compound alkyl groups, phenyl groups formed adjacently in a transparent heterogeneous gel suspension of optoelectronic semiconducting materials to the first active layer; A second layer is formed between the cathode and second layer.

In another general embodiment, a transparent photo-magneto-electric cell includes a first layer, a second layer, and a third layer. The first layer includes at least one first impurity that creates a positive region within the first layer. The second layer includes at least one component material. Furthermore, the third layer contains at least one second impurity that creates a negative region within the third layer. Additionally, the second layer is located between the first layer and the third layer, which creates the second layer. The second stage of the electrolysis of the second layer has been completed so that the free electrons can flow to the third layer and be used as electricity.

In another general embodiment, a transparent photo-magneto-electric cell includes a transparent sheet that allows light to pass through the sheet. Additionally, the photo-magneto-electric cell includes a magnetic and a magnetic component. The compound of the magnetic particles is in the transparent sheet and the magnetic component is in the transparent sheet. Furthermore, the photovoltaic-electric circuit is used to measure electrical current from the electrons in the transparent sheet.

In another embodiment, a method of making a photo-magneto-electric cell includes: forming a first layer with at least one first impurity that creates a positive region within the first layer; forming a second layer with at least one component material; forming a third layer with at least one second impurity that creates a negative region within the third layer; and combining the first layer, the second layer, and the third layer so that the second layer is between the first layer and the third layer.

In another general embodiment, a method of manufacturing a polycrystalline material matrix includes: blending a mixture of at least one liquid base material; adding at least one component material; stirring the mixture of the at least one liquid material and the at least one component material; and allowing the mixture to gel.

In another general embodiment, a method of manufacturing a polycrystalline material matrix includes: mixing at least one base material and at least one component material; sintering the mixture of the at least one base material and the at least one component material to form a fused material; milling the fused material to produce pellets; and forming a sheet of polycrystalline material matrix from the pellets.

In another general embodiment, a transparent window includes a first layer, a second layer, and a third layer. Additionally, the transparent window may include a first outer layer and a second outer layer. The first layer may thus include a first intermediate layer placed between the cathode region and the first outer layer. Additionally, the third layer may also be located between the anode region and the second outer layer. The first intermediate layer and the second intermediate layer include high temperature superconducting (HTS) wire-coupled electrical connectors that extend through opposing groups of three-dimensional split ambipolar magnetic rings. Additionally, the HTS wires extend through the anode and into the cathode into an opposing space-charge region / depletion region (or second layer). For example, in an embodiment, the second layer is interconnected to the third layer (anode region) and the first layer (Cathode region) sections of the photo-magneto-electric cell by the HTS wire rings included in the first intermediate layer and the second intermediate layer. The second layer includes at least one positive and negative semiconducting component material. Additionally, the second layer may include an electron-accepting compound and an electron-donating compound that creates a space-charge region / depletion region interconnected through the anode or cathode layers. Additionally, the second layer is formed between the first layer and the third layer, which creates a layer of water. The second stage of the electrolysis of the second layer has been completed so that the free electrons can flow to the third layer and be used as electricity. The current created from the flow of electrons is energized by hydromagnetic processes, which obtains their energy by convection from the Sun.

In another general embodiment, a transparent window includes a first layer, a second layer, and a third layer. The first layer includes at least one first impurity that creates a positive region within the first layer. The second layer includes at least one component material. The third layer includes at least one second impurity that creates a negative region within the third layer. Additionally, the second layer is located between the first layer and the third layer, which creates the second layer. The second stage of the electrolysis of the second layer has been completed so that the free electrons can flow to the third layer and be used as electricity.

In another general embodiment, a photo-magneto-electric cell includes a transparent sheet that allows light to pass through the sheet. Additionally, the photo-magneto-electric cell contains a plastic compound with the transparent sheet. The electrons in the transparent sheet are used as electricity.

Additional features and advantages are described herein and will be apparent from the following.

LETTER OF THE FIGURES

Figure 1 shows a schematic view of a photo-magneto-electric cell, according to an embodiment of the present disclosure.

FIG. 2A shows a schematic view of the material structure of a photo-magneto-electric cell, according to an embodiment of the present disclosure.

Figure 2B shows a schematic view of electrons and holes within a photo-magneto-electric cell, according to an embodiment of the present disclosure.

Figure 2C shows a schematic view of electrons and holes forming a boundary within a photo-magneto-electric cell, according to an embodiment of the present disclosure.

Figure 2D shows a schematic view of electrons and holes forming a boundary within a photo-magneto-electric cell, according to an embodiment of the present disclosure.

Figure 2E shows a schematic view of a photo-magneto-electric cell harvesting photon, according to an embodiment of the present disclosure.

Figure 2F shows a schematic view of a photo-magneto-electric cell connected to a circuit, according to an embodiment of the present disclosure.

Figure 3 shows a schematic view of the neutral layer producing electrons within a photo-magneto-electric cell, according to an embodiment of the present disclosure; Figure 4A shows a schematic view of a photo-magneto-electric cell, according to an embodiment of the present disclosure.

Figure 4B shows a schematic view of a photo-magneto-electric cell, according to an embodiment of the present disclosure.

Figure 4C shows a schematic view of a photo-magneto-electric cell, according to an embodiment of the present disclosure.

Figure 4D shows a schematic view of a photo-magneto-electric cell, according to an embodiment of the present disclosure.

Figure 5 shows a flow chart illustrating an exemplary process for manufacturing a sheet of transparent polycrystalline material matrix, according to an embodiment of the present disclosure.

Figure 6 shows a flowchart of another example process for manufacturing a sheet of transparent polycrystalline material matrix, according to an embodiment of the present disclosure.

[0059] Figure 7 shows a flowchart of another example process for manufacturing a sheet of transparent polycrystalline material matrix, according to an embodiment of the present disclosure.

Figure 8 shows a flowchart illustrating an exemplary process for manufacturing a single glass sheet for a photo-magneto-electric cell, according to an embodiment of the present disclosure.

Figure 9 shows a flowchart other example process for manufacturing a sheet of transparent polycrystalline material matrix, according to an embodiment of the present disclosure.

Figure 10 shows a flowchart of another example process for manufacturing a sheet of transparent polycrystalline material matrix, according to an embodiment of the present disclosure.

Embodiment of the present disclosure Figure 11 shows data obtained for the electromagnetic properties.

[0064] Figure 12A is a graph of the transmission percent for various wavelength bands and various thicknesses of an example of the present disclosure.

Figure 12B is a graph of the reflections percent for various wavelength bands and various thicknesses of an example of the present disclosure.

[0066] Figure 13 is a table of the electrical capacitance of the present disclosure.

DETAILED DESCRIPTION

As used in this disclosure and the appended claims, the singular forms "a," "an" and "the" include plural referents unless the context dictates otherwise. Thus, for example, reference to "a material" or "the material" includes two or more materials.

The words "comprising," "comprising" and "comprising" are interpreted to be inclusive rather than exclusive. Likewise, the terms "include," "including" and "or" should be construed as inclusive, unless construed as being construed from context. The devices and compositions disclosed in, however, may lack any element that is not specifically disclosed. Thus, a disclosure of the term "comprising" includes a disclosure of the term "comprising substantially" and "consisting of" the components identified. Similarly, the methods disclosed in. Thus, a disclosure of the term "comprising" includes a disclosure of the term "comprising substantially" and "comprising" the steps identified. 85% of the identified components, more than 75% of the identified components, more than 75% of the identified components , for example at least 99% of the identified components.

The term "and / or" used in the context of "X and / or Y" should be construed as "X," or "Y," or "X and Y." where used, the terms "example "And as such, especially when followed by a listing of terms, are not exemplary and should not be construed as exclusive or comprehensive. Any one of the following may be combined with any other desired procedure.

[0070] All percentages expressed herein are by weight of the total weight. As used in, "about" and "approximately" are given in the range of -10% to + 10% of the referenced number, preferably within -5% to + 5% of -0.1% to +0.1% of the referenced number. All numerical ranges should be understood to include all integers, whole or fractions, within the range. Moreover, these numerical ranges should be construed as providing support for a claim. 1 to 8, from 3 to 7, from 1 to 9, from 3.6 to 4.6, from 3.5 to 9.9, and so forth.

Numerical adjectives, such as "first" and "second," are only used to distinguish components. These numerical adjectives do not imply the presence of other components, a relative positioning, or any chronological implementation. In this regard, the presence of a "second material" does not imply that a "first material" is necessarily present. Further, in this regard, a "second material" may be used before, after, or simultaneously with any "first material." [0072] The methods and apparatuses and other advances are contemplated and are not limited to particular methodologies, protocols, and materials because, as the skilled artisan wants to appreciate, they may vary. Further, the terminology is used in the scope of which is disclosed or claimed.

Unless defined otherwise, all technical and scientific terms, terms of art, and acronyms used in the field in the field (s ) where the term is used. Although any compositions or materials are similar to those described herein, the preferred devices, methods, articles of manufacture, or materials are described herein.

Fig. 1 shows an embodiment of a transparent polycrystalline encapsulated photo-magneto-electric cell 100 formed of a plexiglass of one or more transparent polycrystalline material matrices and / or one or more optically transparent polyvinyl alcohol (PVA) I Polydimethylsiloxane membrane encapsulated within polycarbonate sheets. In the embodiment, the transparent polycrystalline encapsulated photo-magneto-electric cell 100 is formed from a polycrystalline material matrix (110, 120, and 130) and transparent polycarbonate sheets (190 and 192) which are laminated together 140. Each layer of the transparent polycrystalline material matrix includes a mixture of one or more base materials and may also include one or more component materials. The base materials may include glass particles and kaolin (clay), may be made entirely of glass powders such as bismuth boron-alumino-silicate glass, or may include a polymer blend such as poly (3,4-thylenedioxythiophene) -poly (styrene sulfonates), thus referred to as (PEDOT: PSS), or the like. For example, Eagle XG Alkaline Earth Boro-aluminosilicate glass wafers is a material suitable for use in the form of a substrate and glass powder. The transparent polycarbonate sheets (190 and 192) may be made from LEXAN®, Tuffak®, Makrolon®, or the like. As explained in more detail below, the single piece of transparent laminated glass 140 includes a positive region or p-type doped layer, a neutral layer, and a negative region or n-type doped layer, which work together to harvest light (photons) and convert the photons into electricity.

In another exemplary embodiment, gallium lanthanum sulfide, gallium lanthanum sulfide oxide glasses, or chalcogenide glasses may be used. Chalcogenide glasses are based on the chalcogen elements S, Se, and Te are formed by the addition of other elements such as Ge, As, Sb, Ga, etc. The chalcogenide glasses are low-phonon-energy materials and are generally transparent He, Nd, Pr, etc. Low-phonon-energy materials enable enhanced energy transfer processes when doped with rare earth ions. The chalcogenide glass may be used as a light conduit for transporting light from one location to another without changing the optical properties, other than those due to scattering, absorption, and reflection.

The luminescence spectra of (a) bi-doped Li Ο-Al O -SiO glass, (b) chalcogenide glass, (c) germanate and germanium silicate glasses, and (d) internal gain at 1300 and 1560 nm as a function of pumping power. The standard telecommunication bands (O, E, S, C, L, U) The possibilities for energy to be transmitted wirelessly given the right configuration parameters as to an embodiment of the disclosed polycrystalline formulation.

In an embodiment, the photoelectric conversion element may include rare earth doped bismuth glasses, an anode and anode, which may be classified as a first active layer (s) containing an electron accepting compound. Additionally, a space batch

Anode / depletion region formed between the anode and the cathode, which may be classified as second active layer with rare earth doped bismuth glasses for enhanced photoluminescence containing an electron-donating compound alkyl groups and / or phenyl groups. The second active layer or the space-charge region / depletion region may be adjacently formed in a transparent heterogeneous gel suspension of optoelectronic semiconducting materials to the first active layer (s); and the second active layer adjacently to the cathode.

In an embodiment, the photoelectric conversion element may include an anode and a first active layer (s) containing an electron-accepting and electron-donating compound. Additionally, the second and second active layer adjoined to the cathode, respectively, and the second active layer adjoined to the cathode (or anode).

In an exemplary embodiment, the photoelectric conversion element may be coupled to an anode, an anode, and an anode. heterogeneous formulas of photo luminescent materials including bismuth sulfides (B12S3) nanosurfactants; and a functional layer formed between the cathode and the active layer adjacent to the anode. The Nano rods may exhibit a low band gap, high absorption coefficient, and good dispersity. The incorporated B12S3 Nano rods may contribute to light harvesting and may provide a more ordered structure. Additionally, the Nano rods show a significant negative shift (-34 mV) under white light illumination. The rule anions-to-anode, cations-to-cathode, applies only inside the cell.

Photo-magneto-electric cell 100 is formed by three layers of a transparent polycrystalline material matrix (110, 120 and 130) and two layers of a transparent polycarbonate sheet (190 and 192) ultraviolet 160, visible 170, and infrared 180 light. When the first layers 110 and the third layer 130 are connected together, the second layer 120, a flow of electrons, may act as a pn junction diode The third layer 130 (n-type doped) to the first layer 110 (p-type doped) when connected by an external circuit 290. The first outer layer 190 and the second outer layer 192 encapsulate the first or second layer second layer 120, and the second layer 130. The middle layer 120 of the second layer 120 is shown.

FIGS. 2A through 2E show the process of electrons 230 inside the transparent layer 230 inside the transparent layer 230 inside the transparent layer 230 inside to the first layer 110 inside a transparent polycrystalline encapsulated photo-magneto-electric cell 100. As shown in Figs. 2A and 2B, the first layer 110 has a positive region or p-type doping that produces a hole 250. Because the first layer has 230 abundance of positive charges 120. As shown in Figure 2C, the first layer 110 and the second layer layer 130 create a boundary 280 where equilibrium is achieved within the second layer 120.

For example, as shown in Fig. 2C and Fig. 2D, a hole 250 leaving behind the first layer is left on the top side of the boundary 280 (ie. the side closer to the first layer 110). Additionally, at electron 230 from the third layer, the left side of the boundary layer is left behind. The separated static positive charges 270 and static negative charges 260 creates an electric field at the boundary 280 or depletion zone which has more electrons 230 and holes 250 moving between the two layers.

As shown in Figure 2E, as the solar energy or photons are absorbed by the encapsulated component materials 240, electrons 230 are freed or excited to a higher energy state, creating an extra mobile electron 230 and an extra mobile hole 250, which both flow through the material matrix. Because the electrons 230 are attracted to the positive static charge 270 at the bottom of the boundary layer 280 and the depletion zone causes the mobile electrons 230 to flow to the third layer 130 and repelled by the negative static charge 260 in the top layer 110 near the first layer 110 and repelled by the positive static charge 270 in the bottom layer 130. As more freed electrons 230 are pushed into the third layer 130, the electrons 230 repel each other because of the electrons 230 are of like charge. Similarly, the holes 250 repel each other.

As shown in Figure 2F, connecting the first layer 110 and third layer 130 to an external circuit 290 allows electrons 230 and holes to recombine in an effort to return the photo-magneto-electric cell 100 to equilibrium position of neutral charge. The electrons 230 and holes 250 in the first layer 110 in the form of electrical current can be used as electricity.

In an example embodiment, the first layer 110 may be doped with one or more first impurities 210, such as a trivalent impurity, or any other suitable material. The first layer of the material matrix. Aluminum, Boron, Indium, or the like, which has only three valence electrons available in its outer orbital, prevents a fourth closed bond with the other atoms in the material matrix. This gives the polycrystalline material matrix to which it is responsible. Because an electron 230 is effectively missing near one of these first impurities 210 or trivalent impurities, a neighboring electron 230 may move to the hole 250. However, that electron 230 will effectively leave a hole 250 hind it, and as this process continues, the movement and exchange of electrons 230 gives it a positive charge through the crystal structure and as a result positive poles. 110. For example, the first impurity 210 as a trivalent impurity may be added as a component material in the formulation of a transparent polycrystalline material matrix. Other methods such as diffusion and ion implantation may be used.

The second layer 120 or neutral layer includes several components that enhance the layer's ability to harvest photons and convert those photons into electricity. In as example barium titanate oxides, germanium oxides, germanium selenides, gallium arsenides, gallium oxides, bismuth (III) sulfides, tellurium bromides, antimony oxides, indium, indium (III) Oxides, poly (3,4-thylenedioxythiophene) -poly (styrenesulfonates), and / or any other material suitable for enhancing the ability of the second layer 120 to harvest photons and convert them to photons into electricity. For example, barium titanate oxide is. The component materials have a high specificity and / or characteristics transparent when formed into a large scale and may be used as a dielectric layer. Tellurium is a semiconductor that exhibits a high level of electrical conductivity in certain directions based on atomic alignment, and bismuth (III) sulfides is a photo conducting material. Additionally, germanium is semiconducting material and antimony oxide may be added to increase the amount of light trapped. Indium may also be used in the form of indium oxides, which is a semiconducting material, or indium tin oxide, which is a transparent oxide that is often used because of its electrical conductivity and optical transparency. Additionally, the component materials 240 have varying band gaps, which allow them to absorb different levels of light. For example, barium titanate has a band gap of 3.2 electronvolt (eV) at room-temperature, germanium has a band gap of 0.661 eV to 4.6 eV, antimony tin oxide (Sb2O5) has a band gap between 3.8 eV and 11 eV, antimony has a band gap of 4.85 eV, Boron has a band gap of 1.50 eV to 1.56 eV, Bismuth has a band gap of 4.69 eV, and Bismuth boron-alumino-silicate has a band gap of 2.34 eV. Light or photons absorbed within the second layer 120 may excite an electron 230 from a value band to a conduction band (i.e., a higher energy level). These excited electrons 230 may eventually stabilize to a lower energy position if they are not harvested as electricity by the photo-magneto-electric cell 100. For example, in an example embodiment where the transparent polycrystalline encapsulated photo-magneto-electric cell 100 is connected to an external circuit, electrons 290 will eventually stabilize into a lower energy position in the valence band and recombine with the material. 290. In an embodiment, the band gap of the polycrystalline material matrix is based on Alkaline Earth Boro Aluminosilicate Glass is approximately 5 eV (similar to that of Diamond, which is approximately 5.5 eV).

The third layer 130 has a negative region or n-type doping such that the semiconductor material has an abundance of free mobile electrons 230 or current-carrying electrons 230. In an example embodiment, the third layer 130 may be doped with one or more second impurities 220 such as a pentavalent impurity, or any other suitable material. The presence of a second impurity 220 or a pentavalent impurity such as Arsenic, Antimony, Phosphorous, or the like, which has four electrons available in its orbit, allows four of the electrons to form bonds with the other atoms in the material matrix. 230. Because of the abundance of current-carrying electrons 230, the third layer 130 is effectively turned into a negative pole.

FIG. 3 shows an example embodiment of a transparent polycrystalline encapsulated photo-magneto-electric cell. In the same way, the second layer may also include component-like materials 310 such as photo-luminescent sand and / or organic salts 310. Examples of organic salts may include sodium chloride, potassium bromide, calcium fluoride or the like, and / or any other adequate material capable of ultraviolet 160 and infrared 180 light and luminescing (glowing) as another wavelength of infrared light 180 (thus non-visible). The addition of photo-luminescent sand and / or organic salts 310 in the second layer 120 allows the polycrystalline material matrix to be used. Additionally, in an example of the present disclosure, Indium Tin Oxide (ITO) and Gallium Nitride (GaN), which are semiconducting photoconductive ultraviolet absorbers, may also be added to the polycrystalline material matrix light to free at electron 230. The freed electron 230 can be used by the photo-magneto-electric cell 100 to generate electricity.

The component materials 240 (photo-luminescent sand, organic salts, ITO and / or GaN) become encapsulated within the polycrystalline material matrix to create the second layer 120, which is a material matrix that is highly dielectric and capable of absorbing ultraviolet 160 and infrared 180 light with high emissivity "blackbody" radiation properties. For example, the emitted infrared light and / or organic salts 310 reacts with the positive and negative indium tin oxide (ITO) and gallium nitride (GaN) encapsulated within the matrix to create electricity by freeing electrons 230 Because the ITO and GaN are semiconducting photoconductive ultraviolet absorbing materials within the polycrystalline material matrix. The infrared light produced by photo-luminescent sand and / or organic salts may also be used as a photoconductive material in the material matrix. When the light is absorbed through the material matrix, the light may or may not be amplified. Furthermore, the second layer 120 that absorb the ultraviolet 160 light to excite an electron 230 to a higher energy level. The flow of electrons 230 from the second layer 120 combine with the effects of the electron flow from the first layer 110 and the third layer 130 to produce electricity when connected to an external circuit 290.

In an embodiment of the present invention, the charged mobile carriers (electrons) transfer to current flow via diffusion and drift mechanisms. At various locations along the diode (from the p-side contact to the n-side contact) the total current is the same, but the components of current (hole drift, hole diffusion, electron drift, electron diffusion) may be different. For example, due to the large carrier concentration gradients, there is a strong tendency for holes 250 to diffuse to the n-type side (or third layer 130) and for electrons 230 to diffuse to the p-type side (or first layer 110 ). 110. The only carriers (electrons 230 or holes 250) that diffuse across the junction (or barrier 280). to become minority carriers to the other side, those are sufficient kinetic energy to overcome the potential barrier.

In an embodiment, when the cell is in equilibrium, diffuse across the junction (or barrier 280). This diffusion current may be canceled out by the very small amount of minority carriers that drift across the junction. For example, in an embodiment, the diffusion current is balanced by the drift current in the opposite direction.

[0092] In another example embodiment, the cell may be placed in forward bias. A forward bias (Fa> 0) reduces the potential barrier to carrier diffusion. The number of carriers (electrons 230 or holes 250) exponentially with increasing barrier height - due to the exponential distribution of electrons 230 and holes 250 within the conduction and valence bands - and thus the diffusion current flowing across the junction increases exponentially with increasing forward bias. Additionally, the drift current flowing in the opposite direction does not depend on the potential barrier height. Therefore, the current state of the art is dominated by the larger number of different energy carriers (electrons 230), which increases exponentially with increasing forward bias voltage. Generally, the more heavily doped side or layer more to the carrier diffusion (now current flow) across the metallurgical junction under forward bias. Additionally, the majority of the carriers are in a state of quasi-neutral regions on the other side or layer. This may be referred to as minority carrier injection under forward bias.

In an embodiment, the minority-carrier diffusion length is the average distance that a minority carrier survives before it is annihilated by recombination. The shorter the minority carrier diffusion length, the more or less the minority carrier concentration goes to zero within the quasi-neutral region, i. e. the steeper the minority-carrier concentration profile and hence the larger the minority-carrier diffusion current. Each component of the cell current may be inversely dependent on the minority carrier diffusion length.

In another embodiment, the cell may be placed in reverse bias. A reverse bias (Fa <0) increases the potential barrier to carriers (electrons 230 or holes 250) diffusion, so that the number of carriers (electrons 230 or holes 250) with sufficient kinetic energy to overcome the potential barrier decreases exponentially with decreasing barrier height and becomes negligible as compared to the drift current flowing in the opposite direction. For example, under reverse bias the dominant current dominated by minority carrier drift across the junction, which is a weak function of reverse bias voltage. Since the minority carrier concentration is greater, the greater the light and the greater the greater the light and the greater the greater the light. The minority carriers (electrons 230 or holes 250) which drift across the metallurgical junction become carriers in the quasi-neutral regions on the other side or layer. This may be referred to as minority carrier collection under reverse bias.

In an exemplary embodiment, under forward bias, the product of the carrier concentrations (not each individual carrier concentration) within the depletion region or second layer 120 is greater than in equilibrium. Which is why the depletion approximation is valid. For example, within the depletion region or second layer 120 (which is not in equilibrium when Fa ^ 0 due to the significant electric field within this region), the electron 230 and hole concentrations may be tracked using the quasi-Fermi levels. It can be seen that Fr and Fn do not change significantly within the depletion region. Due to energy-band bending within the depletion region, however, Fp-Fand Fnchange monotonically within the depletion region and the carrier contexts decay almost exponentially (from /? Pto electrons) across the depletion region ,

In an exemplary embodiment, if the quasi-neutral region is shorter than the minority carrier diffusion length, then approximately all of the injected minority carriers will want to return to the metal contact before recombining with majority carriers. For example, very few of the minority carriers want to be distributed by means of recombining with majority carriers within the quasi-neutral region and hence the minority carrier diffusion current will not be decayed with distance (ie, the diffusion current wants to be constant throughout the quasi-neutral region). neutral region). The minority-carrier concentration profile is constant (Le., The minority carrier concentration is a linear function of distance). The gradient of the minority-carrier concentration profile becomes steeper as the quasineutral region becomes narrower. Therefore, in an example embodiment, the minority carrier diffusion current increases with decreasing quasi-neutral region width, if it is much shorter than the minority carrier diffusion length.

In an embodiment, when an electron 230 moves in a smoothly-varying non-co-linear magnetic structure, its spin orientation adapts constantly, thereby inducing forces act on the magnetic structure and on the electron 230. These forces may be described by electric and magnetic fields of emergent electrodynamics. The topologically quantized winding of so-called skyrmions may have been generated by a type of magnetic whirl recently in chiral magnets. Neodymium magnets blended with chalcogenide glasses, bismuth boron alumino-silicate, and other heavy metals in the glass. The powder may be blended and included in a ring shape between two circles having an outer and inner diameter that are made of high

Temperature Superconducting (HTS) wire melt electric connectors (described in more detail below in Figure 4D0) In an exemplary embodiment, the HTS may be up to 77K (-3 20 ° F or minus -196.15 ° C In addition, the reduced cooling needs of HTS offer performance advantages to low-temperature superconductors (LTS). In an example embodiment, asymmetric double-ringed photo-magneto-electric current circuit may be exposed to multifold double-rings of toroidal dipolar resonance in the form of a magneto-electric metal-dielectric-metal (MIM) transparent photoelectric nanostructure which includes semiconductor materials sandwiched together in a plurality of layers nterconnects through the anode (third layer 130) and cathode (first layer 110) sections of the photo-magneto-electric cell from the polydimethylsiloxane (PDMS) to the space-charge region depletion region (second layer 120).

In photopolymeric semiconducting charge carriers having an example second layer 120 of the polycrystalline material matrix. These component materials 240 photovoltaic and photo-magneto-electric semiconducting energy elements. For example, the component materials can be effectively vacuum encapsulated electron transport nano-environments for photon-harvesting. These nano-environments are capable of large scale photon energy conversions from multiple semiconducting excitation generation interactions of the heterogeneous polycrystalline compounds including rare earth doped bismuth glass within the layered encapsulations. The layered encapsulations may include a transparent polyvinyl alcohol (PVA) in which specific reactive heterogeneous suspensions of photoelectric local field effect (LFE) induced surface plasmon resonance of the nanoparticles are enabled by photoelectric conversions by including rare earth doped bismuth glass. In an embodiment of the present disclosure, the power of a photon may be generated by third harmonic generation, which is the generation of light with a tripled frequency as three photons are destroyed. The phenomenon of the triple photon merging into a single high-powered photon within the semiconductor is encapsulated within a bismuth silicate glass based polycrystalline glass formulation. This process is generally referred to as the "thermal loss and increase the efficiency of a photo-magneto-electric cell 100" according to an embodiment of the present disclosure.

In an embodiment, the incident light may have been converted to higher wavelengths and partly transmitted. Efficiency is determined by the transparency of the material at the wavelengths that lie above the luminescence excitation bands. Bi2C> 3-doped glasses may have large emission, which distinguishes the Bi2O3 doped glasses from traditional rare earth dopants such as erbium and neodymium. High-quality refraction, high nonlinearities, and large windows of transparency, making them ideal for use in frequency comb generation, microlasing and all-optical processing. In particular, crystalline materials may thus possess a non-centrosymmetric structure, which gives rise to the second or nonlinearity. Second order nonlinearity is necessary for three photon processes such as frequency doubling and parametric down-conversion. Bismuth glasses show various emission centers from the ultraviolet-visible region for various species of bismuth as Bi3 +, Bi2 +, Bi +, Bi °, etc. Therefore, these glasses are very promising optical materials for photonic as well as optoelectronic applications. The rare earth doped bismuth glasses may show enhanced photoluminescence. The enhanced photoluminescence may be considered due to energy transfer mechanisms from the above ionic species of bismuth.

In an embodiment of the present disclosure, the material matrix formulations are proposed based on the high-infrared absorption and emissivity of the core encapsulating polycrystalline. Specifically, the thermal emission of polycrystalline material for photovoltaic systems via Q-matching. In the case of the emissivity and the polycrystalline material, the resonances are matched. Within the polycrystalline encapsulations of the second layer 120, such as bismuth boron-alumino-silicates are efficiently collected and the external quantum efficiency is enhanced by seven orders of magnitude.

In another embodiment of the present disclosure, magnets such as neodymium or an alloy of neodymium, iron, and boron Nd2Fei4B may be added to the polycrystalline material matrix of the first layer 110 or third layer 130 as component materials 240. Additionally , the magnets may be external physical magnets. The Nd2Fei4B alloy forms a rare-earth magnet, which has a tetragonal crystalline structure. The addition of this alloy allows for the implementation of the magnetic field. The addition of the rare-earth magnet elements within the polycrystalline material matrix described in the preceding paragraphs creates an electrical circuit, which is further stimulated and magnified by changes in magnetic fields. For example, the relatively high energy for lattice phonons in the polycrystalline material matrix and the exponential increase in the rates for non-radiative multi-phonon relaxation are due to the electronic devices that are required to bridge the gap. This embodiment may be used in photoconductive solar energy lamination, transparent photovoltaic solar cells, and in low-band gap semiconducting material cells like silicon. The polycrystalline material matrix is a transparent luminescent solar concentrator (TLSC) with photoconductive, magnetic, low thermal conductivity polycrystalline material with high band gap and dielectric properties. 170 light, ultraviolet 160 light, infrared 180 light, and / or gamma radiation.

[00102] An example embodiment of the polycrystalline material matrix (electricity) is shown as being capable of dissipating the photons into free electrons 230. Traditional solar cells absorb sunlight but do not allow it to pass through the medium. In the present disclosure, however, the non-visible wavelengths to the human eye are absorbed and therefore minimally transmitted through the transparent polycrystalline material matrix.

[00103] In another embodiment, the polycrystalline material may be combined with indium diselenide (CuInSe2 or CIS), which has an extremely high absorptivity such that 99% of the ultraviolet and infrared light Shining on the CIS is absorbed in the first micrometer of the material. Such a material may be used as an active solar energy substrate. The polycrystalline material matrix of the present disclosure has the electrical capacitance capability to an electrical charge. Class 2 and 3 ceramic capacitors, which have a high to very high thermal conductivity, have a high dielectric strength and resistance high permittivity (200 to 14,000 resistance). In an embodiment of the present disclosure, the semiconducting material 240 encapsulated in the polycrystalline material matrix of the second layer 120 experiences a changing magnetic field and produce a photo-magneto-electric effect. Thus, a photo-magneto-electric cell 100, which may have a heterojunction structure embedded in the transparent polycrystalline material matrix, and an active solar energy substrate or second layer 120, may provide a capacitor with Class 2 to 3 energy capacitor capabilities.

Additionally, most single-crystal cells do not require a metal grid for the top electrical contact. Instead, the present invention may include a thin layer of transparent polyvinyl alcohol (PVA) / DMSO based compound, which may include a heterogeneous suspension of a polycrystalline material matrix combined with a conducting oxide, such as tin oxide or the like to serve as a connection for the external circuit 290. These are the active materials used in the process of photovoltaic cells ) capacitor and antireflection device. For example, the first layer 110 may be used as a cathode and the third layer 130 may be used as an anode.

In an embodiment of the present disclosure, multiple layers of the transparent polyvinyl alcohol (PVA) / DMSO based insulated conductive gel, which may include a heterogeneous suspension of a polycrystalline matrix, may be laminated together. For example, the multiple layers may be combined using soft lithography techniques and may be encapsulated within a clear polydimethylsiloxane membrane. Each layer of polycrystalline matrix material may include component materials 240 having different band gaps encapsulated within the transparent heterogeneous suspension of the polycrystalline matrix. For example, barium titanate has a band gap of 3.2 electronvolt (eV) at room-temperature, germanium has a band gap of 0.661 eV to 4.6 eV, antimony tin oxide (Sb2O5) has a band gap between 3.8 eV and 11 eV, antimony has a band gap of 4.85 eV, Boron has a band gap of 1.50 eV to 1.56 eV, Bismuth has a band gap of 4.69 eV, and Bismuth boron-alumino-silicate has a band gap of 2.34 eV. These material properties allow the photo-magneto-electric cell to be used as a transparent polycrystalline super-capacitor photovoltaic and photo-magneto-electric cell junction. This capacitor may exhibit a capacitance with values up to 10,000 farads at more than 1.2 volts. This bridge bridges the gap between electrolytic capacitors and rechargeable batteries as well as electrolytic capacitors, and it can accept and deliver a solar charge solar systems linked to batteries. Further to an embodiment of the present invention, it is possible to tolerate many more charge and discharge cycles than conventional rechargeable batteries due to the varying band gaps and capacitance of the component materials.

In an example embodiment, the first layer has less than 0.1 microns which has a band gap of 2.8 eV or more second layer 120. In this case, the absorbing layer is the transparent polycrystalline material as disclosed in one or more of the present disclosure. In an embodiment, positive charges ions gather on the surface of the negatively charged electrode and negative ions on the surface of the positive electrode. Since the ions do not actually combine with the atoms of the electrodes, no chemical reaction is involved. In an exemplary embodiment, extra surface area may be achieved by placing microholes in each of the opposing films of the first layer 110 and the third layer 130 to increase the storage capacity. For example, each layer of the transparent material matrix may be applied to a soft-lithography process.

[00107] FIGS. 4A through 4D shows schematic views of transparent photo-magneto-electric cells 400, 402, 404 and 406, respectively, according to example of the present disclosure. In the illustrated embodiment of Fig. 4A, the photo-magneto-electric cell 400 includes a transparent sheet of glass or polymer blend. In the illustration, the transparent sheet may be formed by laminating multiple layers of transparent polyvinyl alcohol (PVA) / DMSO-based, which may include a heterogeneous suspension encapsulated with a polydimethylsiloxane membrane via soft lithography processes, together to form a Photo-magneto-electric cell 400. For example, the multiple layers may include a first layer 110, a second layer 120, and a third layer 130. Additionally, the photo-magneto-electric cell may include a first outer layer and a second outer layer (not picture) of a transparent clear polycarbonate sheet such as Lexan® or the like. The photo-magneto-electric cell 400 may also include an inductor coil 410, a cathode 420, and an anode 430. The photo-magneto-electric cell 400 may also include magnetic electrodes 440a and 440b and magnets 450 (first magnet 450a, second magnet 450b, third magnet 450c, and fourth magnet 450d) such as neodymium magnets to create a permanent quadrupole Photo-magneto-electric circuit. In an embodiment, the magnets may be used in the first layer 110 or cathode 420 and the third layer 130 or anode 430. The electrodes act as carriers and stimulators of Eddy currents or Foucault currents, which in a magnetic field in the conductor, due to Faraday's law of induction. Eddy currents flow in closed loops in the direction of the magnetic field. The eddy currents can be generated by a magnet or transformer, for example, or by relative motion between a magnet and a nearby conductor. The magnitude of the current in a given loop is proportional to the strength of the magnetic field, the area of the loop, and the rate of change of the flux, and inversely proportional to the resistivity of the material.

In the first embodiment, the magnetic electrodes 440a and 440b may be the first and second ends of a single copper wire 480, which has been coiled around all of the magnets 450 (450a, 450b, 450c, and 450d) and forms and inductor coil 410. The magnets 450 such as neodymium magnets create quadrupole magnetic field within the copper wire 480. Additionally, the transparent glass or polymer sheet may be placed on an anode Cathode Trunk Circuit in a permanent quadrupole Photo-magneto-electric circuit nanostructured polycrystalline within thin intersecting electrodes. For example, a circuit is made with the copper wire 480, the first layer 110, and the third layer 130 or anode layer, the inductor coil 410, and the electrodes (420, 430, 440a, and 440b). The external circuit for the photo-magneto-electric cell 400 allows the electrons 230 to flow from the anode 430 to the cathode 420 to be used as electricity at a measurable output voltage 460. In an example embodiment, the photo-magneto-electric cell 400 has a second layer 120, which includes component materials 240 encapsulated within the material matrix. The component materials may include barium titanate oxides, germanium oxides, antimony oxides, indium, or the like. Additionally, the magnets 450 create a quadra-pole magnetic field and associated magnetic flux density 470 throughout the material.

The quadrupole permanent photo-magneto-electric circuit enhances the efficiency of the photo-magneto-electric cell 400 by guiding freed electrons 230 and enhancing the photovoltaic effects of the material matrix. The quadrupole permanent Photo-magneto-electric circuit interacting with an electron 230 in a manner that alters the velocity of kinetic energy. For example, the electrons are used in the field of electromagnetic field propagation, such as in an infinite uniform field, moving electrons the quadrupole permanent Photo-magneto-electric circuit. Additionally, the movement of the electrons 230 is thus dependent on the electron velocity and the child of oscillations associated with the form of gravitational wave produced within the field of the forces of the lamination. In the embodiment, the quadrupole permanent photo-magneto-electric circuit created by the magnets 450 and the copper wire 490 makes the photo-magneto-electric cell 400 act like a Hall element. The effect of Photo-magneto-electric cell 400 Acting like a Hall element allows the electrons 230 and holes 250 to accumulate on the respective surfaces of the photo-magneto-electric cell 400 search that is equal to and opposite charge on the opposing sides of the photo-magneto-electric cell 400.

[00110] FIG. 4B shows a schematic view of a transparent photo-magneto-electric cell 402, according to an embodiment of the present disclosure. In the embodiment, the photo-magneto-electric cell 402 includes a wire 482 such as an enameled copper magnetic wire. Additionally, the photo-magneto-electric cell 402 may also include two metal bar inductors 412. The enameled copper magnetic wire 482 may be coiled around all of the magnets 450 (450a, 450b, 450c, and 450d) and the ends inserted into the second layer 120. Similar to the photo-magneto-electric cell 400 in FIG. 4A, the transparent glass or polymer sheet may be placed inside an anode cathode trunk circuit. The anode trunk circuit may be permanent in a quadrupole Photo-magneto-electric circuit of heterogeneous suspension nanostructured polycrystalline material matrices or tough gel sheets with thin intersecting electrodes. The circuit contains the same elements as discussed above in FIG. 4A and thus includes additional metal bar inductors 412.

FIG. 4C shows a schematic view of a transparent photo-magneto-electric cell 404, according to an embodiment of the present disclosure. In the exemplary embodiment, the photo-magneto-electric cell 404 includes a first outer layer 190 and a second outer layer 192. In an embodiment, the first outer layer 190 and the second outer layer 192 may be a transparent clear polycarbonate having a thickness of up to 6 mm. Additionally, the Photo-magneto-electric cell 404 includes wires 484a and 484b and wires 486a and 486b. Wires 484a and 484b may have copper-clad steel (CCS) wire having a thickness of up to 1 mm. In an example embodiment, wire 484a is wrapped around a pair of magnets 450 (first magnet 450a and second magnet 450b) and attached to a pair of electrodes 444. Additionally, wire 484b is wrapped around a pair of magnets 450 (third magnet 450c and fourth magnet 450d) and attached to a pair of electrodes diameter of up to 12 mm. Additionally, wires 486a and 486b may have a 2G HTS wire having a thickness of about 0.095 mm. In an exemplary embodiment, the wire 486a attaches the second pair of electrodes to the second layer 120 to the second layer 486a and 486b may spread throughout the second layer 120.

Additionally, the transparent photo-magneto-electric cell 404 includes bars 454 that connect adjacent magnets 450 and secure the magnets 450 to the first outer layer 190 and the second outer layer 192 respectively. For example, one bar 454 may connect the first magnet 450a with the third magnet 450c and the other 454 may connect the second magnet 450b and the fourth magnet 450d. Additionally, the first and second magnets (450a and 450b) secure the third and third magnets (450c and 450d) to the second outer transparent layer 192 example embodiment, the bars 454 may be PU coated steel bars having up to a 4mm diameter.

[00113] In the first and second ends of a single copper wire 484a or 484b, which has been previously described as being a pair of magnets 440 may 130. The magnets 450 such as neodymium magnets create a quadrupole permanent 484 and 486. Additionally, the transparent glass or Polymer sheet may be placed inside an anode Cathode Trunk Circuit in a quadrupole permanent Photo-magneto-electric circuit nano structured polycrystalline suspension. The polycrystalline suspension may be encapsulated in a transparent polyvinyl alcohol (PVA) I DMSO based on an electro-conductive coating, which may include heterogeneous suspensions of thin intersecting electrodes. The electrically conductive polydimethylsiloxane membrane may be further embedded in a clear polydimethylsiloxane membrane. For an example, the external circuit may be embedded in a clear

Polydimethylsiloxane membrane, and the external circuit for the photo-magneto-electric cell 460. In an example embodiment, the photo-electromag- magneto-electric cell 404 has a second layer 120, which includes component materials encapsulated within a transparent polyvinyl alcohol (PVA) / DMSO based. The component materials may include barium fluorides, barium titanate oxides, germanium oxides, antimony oxides, indium oxides, indium, bismuth sulfides, and bismuth boron-alumino-silicate glass or the like, or any other component materials discussed. Additionally, the magnets 450 create a quadrupole permanent Photo-magneto-electric circuit and associated magnetic flux density 470 throughout the material.

FIG. 4D shows a schematic view of a transparent photo-magneto-electric cell 406, according to an embodiment of the present disclosure. In the exemplary embodiment, the photo-magneto-electric cell 406 includes a first outer layer 190 and a second outer layer 192. In an example embodiment, the first outer layer 190 and the second outer layer 192 may have a coated polycarbonate having a thickness of up to 6 mm. The photo-magneto-electric cell 406 may thus include a first layer 110, a second layer 120, and a third layer 130. The first layer 110 may also include a second intermediate layer layer 490. Additionally, the Photo-magneto-electric cell 406 may include electrodes 444. In the embodiment, the first layer 110 may be a transparent polyvinyl alcohol (PVA) / DMSO based on a heterogeneous suspension of a cathode blend of component materials 240 may include antimony tin oxide and barium titanate oxides. The third layer 130 may also be a transparent polyvinyl alcohol (PVA) / DMSO based compound that is a heterogeneous suspension of an anode. III) oxides and barium titanate oxides. Additionally, the photo-magneto-electric cell 406 includes wires 494 that electrically interconnects the first layer 110, the second layer 120, and the third layer 130. In an exemplary embodiment, wires 494 may be a 2G HTS wire having a thickness of about 0.095 mm. Additionally, in an embodiment, the electrodes 444.

The first intermediate layer 488 and the second intermediate layer 490. The first intermediate layer 490 may be composed of polydimethylsiloxane (PDMS) that has groups of concentric rings 496 and 498 embedded within the structure. The inner rings 496 may have a specified inner ring diameter. Additionally, the outer rings 498 may have a specified outer ring diameter. 494. For example, in the first intermediate layer 488, the group of concentric rings 496 and 498 may be connected in series by wire 494a. The wire 494 a may extend from an electrode 444 on one end of the first intermediate layer 488 through the group of concentric rings 496 and 498 to another electrode 444. The wire 494a may extend from the concentric ring to the first layer 120. Similarly, wire 494b may be used to connect the concentric ring in the second intermediate layer and thus connect the group to the third layer 130 to the second layer 120.

[00116] In an example embodiment, the photo-magneto-electric cell 406 may also include magnets 491. The magnets may be arranged between the inner rings 496 and the outer rings 498. the magnetic powder may include neodymium magnetic powder. Furthermore, in an example embodiment, the magnetic powder includes about 5% north / south polarity neodymium magnetic powder and about 95% bismuth boron-alumino-silicate glass powder. The magnetic powder may therefore be embedded in the PDMS of the first intermediate layer 488 and the second intermediate layer 490.

[00117] uniquely sharp contrasting regions of enhanced and suppressed emission, and precise fabrication of periodic nanostructures to be embedded within a polycarbonate for laminations over large scale areas while maintaining macroscopic correlation.

[00118] architectural facades, window glazing and frames, windshields, mobile phone screens, with the connection to the internal battery of the mobile internetworking telecommunications device, or the like, and turn each window, mobile internetworking telecommunications device, electrical hybrid automobile, or architectural structure into a solar power collector and storage unit. In addition, solar thermal photovoltaic (STPV) systems are also being used, such as stray light absorption and suppression, optical packaging, laser devices, IR systems, and passive thermal control systems ,

[00119] Additionally, the present disclosure provides a three-dimensional, multi-band gap, photonic, dielectric, semiconducting, and transparent polycrystalline material capable of operating under high voltage and high switching frequency conditions. In addition, the present invention has been published in the United Kingdom. The polycrystalline material matrix is stable enough to operate in harsh environments and high voltage breakdowns. For example, the polycrystalline material matrix may be used for industrial functions, such as motor drives and power supplies, automotive and transportation systems including hybrid and electric vehicles, aircraft, ships, and wireless communications, military systems, space programs, and clean energy generations from solar inverters and wind turbines.

[00160] Unlike conventional glass, which absorbs only a very small amount of light, at least 95% (according to EN 12898 by means of a spectral reflectance measurement using a Perkin Elmer Lambda 883 spectrophotometer having a range of 2.5-50 microns at the time of the tests). The heterogeneous polycrystalline material matrix has not been fully transparent since it is transparent, but therefore because of the natural ultraviolet light absorption at 94.5%. The bismuth based Heavy Metal Oxides (HMO) transparent polyvinyl alcohol (PVA) / DMSO based on a conductive material is a conductive material that converts into a solid-state matrix with bismuth boron-alumino-silicate glass optic and optoelectronic components.

The example of the second layer 120 of the transparent polyvinyl alcohol (PVA) I DMSO is based on a conductive material of the type polycrystalline material matrix to 2500 nanometers range) while reflecting 6.5% of the solar energy. The total amount of solar energy absorbed in the present invention is made up of the transparent polyvinyl Alcohol (PVA) I DMSO based on the use of conductive materials. Additionally, the transparent polycrystalline material matrix has an ultralow Ultra Violet Reflection g-value of 0.051% over a spectrum of λ = 200 to 380 nm, which only transmits low amounts of heat beyond the glass. For comparison, conventional uncoated glass has a g-value of about 0.85, which means that 85% of the incoming heat can be transmitted to the room behind the glass. Additionally, modern triple glazed glass has a g-value of approximately 0.55. Examples of the Electromagnetic Properties, Transmissions, Reflections, and Electrical Capacitance are shown in Figs. 11 to 13.

A bismuth glass encapsulation technique. A silicate based glass encapsulation of the transparent polycrystalline material. Additionally a bismuth based polycrystalline transparent glass may be prepared based on the material formulation method described in detail below. Additionally, the transparent polyvinyl alcohol (PVA) / DMSO is isolated from a polycarbonate alcohol (polyvinyl alcohol). PVA), polyurethane, or polydimethylsiloxanes spray coating. The transparent piece of laminated polyvinyl alcohol (PVA) / DMSO is based on an electroconductive material matrix that is capable of transmitting and transforming electromagnetic radiation (visible light, ultraviolet, infrared, gamma radiation) into electricity. Additionally, another example is a capacitor or a battery. Bismuth boron-alumino-silicate glass or soda lime glass may also be used as aluminum silicate (kaolin), bismuth sulfide, barium titanate, and ferroelectric electro-ceramic materials, which have high dielectric constant, photorefractive effect, and piezoelectric properties. Additionally, the component materials include high indices of internal refraction, high nonlinearities (Snell's Law), and large windows of transparency, making them ideal for use in frequency comb generation, microlasing and all-optical processing.

In another embodiment of the present invention, the polycrystalline material in a thixotropic bio-resin heterogeneous matrix may be combined with bitumen or asphalt to create an industrial asphalt formula. For example, asphalt modified with the polycrystalline material. What does it look like? A 3.4 ° C cool surface than unmodified Asphalt after exposure to the ultraviolet light at 20 ° C.

Bismuth boron alumino-silicate glass bismuth based heavy metal oxide (HMO) polycrystalline material. FIG 130. Although the method 500 is described with reference to the flow chart illustrated in FIG 500 may be used. For example, the blocks may be intermittently repeated or performed, certain blocks may be combined with other blocks, and blocks may be optional or may only be contingently performed. The example process 500 may begin with producing a bismuth boron alumino-silicate glass (block 502). In an example embodiment of the present disclosure, the glass is a boron-alumino-silicate glass, but other glass may be used as any other time of silica content glass. Then, the glass is milled to form a heterogeneous blend of 35μm base glass particles (block 504) and mixed with the component materials (block 506). The milling operation may use media milling or wet media milling. However, wet media milling is preferred due to the particle size requirements. For example, the media milling process may be used in a ball or bead filled with balls, which grinds the material to the appropriate particle size distribution by friction and the impact with the tumbling balls. Additionally, other milling processes such as milling, SAG milling, pebble milling, or the like may be used, or any other process that lends itself to the appropriate particle size distribution. Heterogeneous blend of component materials to. 20% by weight and about 180 - 200μηχ Then base glass particles and the component materials may be mixed in a ratio of 20% 80 percent glass particles. In another exemplary embodiment, the one or more first impurities, and / or the one or more component materials may be blended with bismuth boron-alumino-silicate glass particles or into a transparent polyvinyl alcohol (PVA) I DMSO-based electro-conductive compound containing hydrogen fluoride, barium titanate oxides , Tellurium bromides, germanium oxides, antimony oxides, and indium. Additionally, the component material formulation may include Au-20 weight percent Sn eutectic solder, Sn-3.5 weight percent Ag eutectic solder, and Sn3Lu or Au4Lu. The mixture of base glass particles and component materials are sintered (block 508). Next, the mixture of base glass particles and component materials may be sintered onto the surface of a first bismuth boron alumino-silicate glass disk (block 510). Then the other half of the mixture of glass particles and component materials may be sintered onto the surface of a second bismuth boron alumino-silicate glass disk (block 512). The first and second bismuth boron-alumino-silicate glass disks have sintered together on their respective surfaces, the first and second glass disks are then sintered together to form an encapsulated disk of barium titanate oxides, germanium oxides , Antimony Oxide, and Indium heterogeneous semiconducting polycrystalline composite in a bismuth boron alumino-silicate glass (block 514). In an embodiment, the disks may be sintered together at a temperature between 300 ° C and 380 ° C. Thereafter, the encapsulated disk is milled until the material reaches a particle size of 35 pm (block 516). Finally, the finished glass powder may be used as a transparent polycrystalline laminate (block 518), which may be used as the first layer 110, the second layer 120, or the third layer 130 depending on the component materials used.

FIG. 6 includes a flowchart of another example process 600 for manufacturing a sheet of transparent polyvinyl alcohol (PVA) / DMSO based on a heterogeneous suspension of polycrystalline material matrix, for the first layer 110, the second layer 120 and / or the third layer 130. Although process 600 is described with reference to the flowchart illustrated in FIG. 6, it is intended to be appreciated. For example, the blocks may be intermittently repeated or performed, certain blocks may be combined with other blocks, and blocks may be optional or may only be contingently performed. In an example embodiment, the manufacturing process may use soft lithography or other microfabrication techniques.

The example process 600 may begin with dry mixing the appropriate proportions of base materials of glass, kaolin, and polymeric component materials (block 602). For example, the base materials and component materials may be mixed for up to 3.5 hours. Then, the mixture is heated (block 604) at room temperature or up to 30 ° C. In an embodiment, the mixture may be heated by using a sintering process. For example, the mixture may be sintered at a specific temperature and pressure. After heating, a lubrication fluid may be added to the mixture of base and component materials (block 606). Ketjenlube 552 water-soluble copolymer or the like may be used. Next, the lubrication fluid and sintered glass mixture may be milled to produce pellets (block 608). Additionally, in an embodiment of the present disclosure, the mixture may be milled to a nano / sub-micron colloidal stabilized fraction. Preferably, a particle size distribution of 540 to 580 nm should be considered as 60% of the powder being 1000 nm the appropriate particle size distribution by friction and the impact with the tumbling balls. Additionally, other milling processes such as milling, SAG milling, pebble milling, or the like may be used, or any other process that lends itself to the appropriate particle size distribution. Then, the finished glass powder may be used to form a sheet of transparent polycrystalline laminate (block 610).

Figure 7 includes a flow chart of an example process 700 for manufacturing a sheet of polycrystalline material matrix for the first layer 110, the second layer 120 and / or the third layer 130. Although process 700 is described with reference to the flowchart illustrated in FIG. 7, it is intended to be used. For example, the blocks may be intermittently repeated or performed, certain blocks may be combined with other blacks, and blocks may or may not be contingently performed.

[00129] The example process 700 may be with producing a glass such as bismuth boron-alumino-silicate glass, or the like (block 702). In an example embodiment of the present disclosure, the glass is a boron-alumino-silicate glass, but other glass materials may also be used as poly (3,4-ethylenedioxythiophene) -poly (styrene sulfonate) or any other silicate based glass , Then, the glass is milled to form a heterogeneous blend of 35 pm base glass particles to form a base material (block 704). The milling operation may use media milling or wet media milling. For example, the media milling process may be used in a ball or bead filled with balls, which grinds the material to the appropriate particle size distribution by friction and the impact with the tumbling balls. Additionally, other milling processes such as milling, SAG milling, pebble milling, or the like may be used, or any other process that lends itself to the appropriate particle size distribution. Next, the base material is blended with component materials in an aqueous suspension (block 706). In an exemplary embodiment, the formulation of the present invention has an average size of 5 μ m, but may be smaller and have an average size of about 50 to about 100 nm materials may include barium titanate oxides, germanium oxides, antimony oxides, and indium (III) oxides. Then, the blended aqueous suspension may be dried to remove the water from the suspension resulting in a final powder mixture (block 708). The suspension has been dried at various temperatures for a long time until it has sufficiently evaporated. Then, the final powder mixture is heated or hot compounded to form a polymer composite (block 710). Finally, the finished glass powder may be used to form a sheet of transparent polycrystalline laminate (block 712).

FIG. 8 shows a flowchart of an example process 800 for manufacturing a single sheet of transparent glass 140 for a photo-magneto-electric cell 100. Although process 800 is illustrated with reference to the flow chart illustrated in FIG. 8, it wants to be appreciated that other methods of performing the act associated with the process 800 may be used. For example, the blocks may be intermittently repeated or performed, certain blocks may be combined with other blocks, and blocks may be optional or may only be contingently performed.

[00131] The example process 800 may begin with a first outer transparent layer 190 (block 802). In a first embodiment of the present disclosure, the first outer transparent layer may be transparent clear polycarbonate sheet such as LEXAN®, Tuffak®, Makrolon®, or the like. 110 of transparent polycrystalline material matrix to form an anode or cathode layer (block 804). For example, the first outer layer may be coated using an airless spray system to form an anode or cathode layer. For example, the first layer may be designated as a cathode layer, which may include polyaniline (PANI), antimony tin oxides (SboO), and barium titanate oxides. Next, the first layer may be configured with tape (block 806). For example, the first layer 110 may be configured using a soft lithography technique. In an example embodiment, the first layer 110 or cathode layer may be covered lengthwise with rows of tape to form a pattern of covered and uncovered rows of equal width of material. For example, the uncoated and coated sections may have 15mm and 20mm widths. Then, the first layer 110 is coated with a clear coat as a 2K clear coat (block 808). In an embodiment, the clear coat may be less than 250 pm thick. After clear coating, the tape is removed from the first layer 110 (block 810), which uncovers rows of the first layer 110 that are not coated with the clear coat. Then, the uncoated sections may be filled with a transparent polycrystalline material matrix for the second layer 120 (block 812). In an embodiment, the second layer may be 15 mm wide and 2 mm high or 20 mm wide and 2 mm tall. For example, the second layer may include transparent polyaniline (PANI) which has a heterogeneous blend of semiconducting component materials such as barium titanate oxides, germanium oxides, antimony oxides, indium, and bismuth boron alumino-silicates. Next, a second outer transparent layer 192 may be produced (block 814) and the steps performed on the first outer transparent layer 190 (block 804 to block 812) may be repeated for the second outer transparent layer 192 (block 816). In an example embodiment, the second outer transparent layer 130 of transparent polycrystalline material is matrix to form an anode layer, which may include polyaniline (PANI), indium (III) oxide (In2O3), and barium titanate oxides. Additionally, the third layer 130 shows that the first outer layer 190 with the cathode layer and the second outer layer 192 with the anode layer may be combined (block 818) ). 15mm wide strips of tape with 15mm spacing (15mm wide strips of tape with 20mm spacing) patterned rows of the second layer 120 on the second outer layer 192. In an example embodiment, the two patterned second layers 120 , Then, the first outer layer 190, the first layer 110, the second layer 120, the third layer 130, and the second outer layer 192 may be sealed with a clear coat such as a 2K clear coat or bismuth boron alumino-silicate glass (block 820).

9 shows an example process 900 for manufacturing a sheet of polycrystalline material matrix for the first layer 110, the second layer 120 and / or the third layer 130. Although process 900 is illustrated with reference to the flow chart illustrated in FIG 9, it wants to be used that other methods of performing the acts associated with the process. For example, the blocks may be intermittently repeated or performed, certain blocks may be combined with other blacks, and blocks may or may not be contingently performed.

[00133] The example process 900 may begin with blending water and DMSO in a mixture of about 20 weight percent water and about 20 weight percent DMSO (block 902). An example of DMSO or dimethyl sulfoxide - (CHA) SO is available from Sigma Aldrich (Product Number W387520-1KG) Thereafter, about 20 weight percent polyvinyl alcohol (PVA) may be added to the mixture (block 904) may be Mowiol® 4-88 - poly (vinyl alcohol) provided by Sigma Aldrich (Product Number 81381-1KG) .Then, about 20 weight percent of glutaraldehyde solution may be added to the mixture (block 906) to Example glutaraldehyde solution may be Glutaric dialdehyde solution (OHC (CH2) 3CHO provided by Sigma Aldrich (Product Number W512303-1KG-K) .No, component materials may be added to the mixture (block 908) .For example, if manufacturing a first layer 110 or a cathode layer, the component materials may include Antimony Tin Oxide and Barium Titanate Oxide, and the mixture is stirred for a certain amount of time at a specific temperature (block 908) C, or until the component materials and added solutions are temporarily incorporated. After stirring the mixture, the mixture is left to gel (block 912). Once the mixture has gelled, the gel is submerged in acetone to remove all of the water, which will reduce the dimensions of the gel (block914). An example of Acetone CH3COCH3 is Sigma Aldrich (Product Number 650501-IL). After the acetone has dehydrated the gel, the gel is rehydrated with DMSO (block 916) and left to dry to a transparent gel (block 918). Then, the tough transparent gel is processed with gamma irradiation (block 920). In an embodiment, the processed gel may encapsulate coated with a 2k polyurethane clear coat.

FIG. 10 shows an example process 1000 for manufacturing a sheet of polycrystalline material matrix for the first layer 110, the second layer 120 and / or the third layer 130. Although the process 1000 is illustrated with reference to the flow chart illustrated in FIG 10, it wants to be appreciated that other methods of performing the act associated with the process 1000 may be used. For example, the blocks may be intermittently repeated or performed, certain blocks may be combined with other blacks, and blocks may or may not be contingently performed.

The example process 1000 may begin with dip-coating a first precursor film on a PDMS stamp (block 1002). In an embodiment of the PDMS stamp may be plasma treated. Then, the PDMS stamp may be placed on a second precursor film (block 1004). For example, the PDMS stamp may be placed on the plasma-treated polycarbonate or alkaline earth boro aluminosilicate glass. In another exemplary embodiment, the PDMS is printed on a second precursor film as a transparent polyvinyl alcohol (PVA). For example, the non-cross-linked part of the polymer thin film on the polycarbonate or alkaline earth boro aluminosilicate glass wafer may be used to generate the final pattern using photolithographic surface micromachining. Then, the PDMS stamp may be dip-coated with the first precursor film (block 1008). Next, a first substrate and a second substrate may be contacted for a Selective Contact Thermochemical Reaction (SCTR) (block 1010). For example, a first substrate is searched for as the PVA / DMSO based on the other hand. Then, the non-cross linked part of the thin film may be developed for an electrically conductive tough gel (block 1012). For example, the non-cross-linked part of the thin film may be developed for fabricating nano or micro arrays of transparent polyvinyl alcohol (PVA) / DMSO based, which may include heterogeneous suspensions of select semiconducting powders. Each region is encapsulated in PDMS and each section is separated by a thin barrier of PDMS and the dielectric insulator. Then, the entire cell is bonded and encapsulated together in PDMS. In an embodiment, the semiconducting powders may include up to 80% bismuth boron-alumino-silicate glass with an anode or a cathode blend.

In an exemplary embodiment, the mixture includes about 80 weight percent base material such as bismuth boron-alumino-silicate glass. Antimony Tin Oxide (Sb ^ Os) and about 10 weight percent Barium Titanate Oxide. In addition, the barium titanate may have a particle size of less than 3 pm. In addition, the barium titanate may have a particle size of less than 3 pm.

In an embodiment, the mixture includes about 80 weight percent base material such as bismuth boron-alumino-silicate glass. Indium (III) oxides (In2Os) and about 10 weight percent barium titanate oxides. In addition, the barium titanate may have a particle size less than 100 nm. In addition, the barium titanate may have a particle size of less than 3 pm.

In an exemplary embodiment, the mixture includes about 80 weight percent base material such as bismuth boron-alumino-silicate glass. Barium titanate oxides, about 5 weight percent germanium oxides, about 5 weight percent antimony oxides, and about 5 weight percent indium (III) oxides (In 2 C> 3). In addition, the barium titanate may have a particle size less than 100 nm. In addition, the barium titanate may have a particle size of less than 3 pm. The Antimony Tin Oxide may have a nanopowder having a particle size of less than 50 nm and the germanium (IV) oxides. In an example embodiment, the base material starts as 100 weight percent glass particles. Thereafter, about 20 weight percent kaolin, about 0.6 weight percent of neodymium ironboron (NdFeB) permanent magnetic powder, about 0.6 weight percent indium tin oxide, and about 0.6 weight percent gallium nitride powder are added. The kaolin should be AS400 or finer equivalent grade and the neodymium iron-boron permanent magnetic powder should have particles with a particle size of 35 pm or less. Additionally the gallium nitride powder should have particles with a particle size of 35 pm or less. The indium tin oxide particles should have a particle size of 35 pm or less.

[00140] In an example embodiment, the base material starts as 100 weight percent glass particles. Thereafter, about 20 weight percent kaolin, about 0.6 weight percent of neodymium ironboron (NdFeB) permanent magnetic powder, about 0.6 weight percent indium oxide, and about 0.6 weight percent indium phosphide are added. The kaolin should be AS400 or finer equivalent grade and the neodymium iron-boron permanent magnetic powder should have particles with a particle size of 35 pm or less. Additionally, the indium phosphide powder should have particles with a particle size of 35 pm or less. The indium tin oxide particles should have a particle size of 35 pm or less.

In an example embodiment, the base material starts as 100 weight percent glass particles. Thereafter, about 20 weight percent kaolin, about 0.6 weight percent of neodymium ironboron (NdFeB) permanent magnetic powder, about 0.6 weight percent indium oxide, about 0.6 weight percent of indium phosphide, and about 0.6 weight percent of aluminum gallium arsenide are added , The kaolin should be AS400 or finer equivalent grade and the neodymium iron-boron permanent magnetic powder should have particles with a particle size of 35 pm or less. Additionally the indium phosphide powder should have particles with a particle size of 35 pm or less. Furthermore, the aluminum gallium arsenide powder should have particles with a diameter of 35 pm or less. The indium tin oxide particles should have a particle size of 35 pm or less.

In an example embodiment, the base material starts as 100 weight percent glass particles. Thereafter, about 20 weight percent kaolin, about 0.6 weight percent of neodymium ironboron (NdFeB) permanent magnetic powder, about 0.6 weight percent indium tin oxide, about 0.6 weight percent indium phosphide, and about 0.6 weight percent Copper Indium Diselenide are added , The kaolin should be AS400 or finer equivalent grade and the neodymium iron-boron permanent magnetic powder should have particles with a particle size of 35 pm or less. Additionally the indium phosphide powder should have particles with a particle size of 35 pm or less. Furthermore, the Copper Indium Diselenide powder should have particles with a diameter of 35 pm or less. The indium tin oxide particles should have a particle size of 35 pm or less.

In an embodiment, the base material starts as 100 weight percent poly (3,4-ethylenedioxythiophene) -poly (styrenesulfonate). Thereafter, about 10 weight percent of Antimony Tin Oxide (Sb20s) and about 10 weight percent of Barium Titanate Oxide are added.

In an embodiment, the base material starts as 100 weight percent poly (3,4-ethylenedioxythiophene) -poly (styrene sulfonates). Thereafter, about 10 weight percent of Indium (III) oxides (I112O3) and about 10 weight percent of Barium titanate oxides are added.

[00145] EXAMPLES

The following non-limiting examples are illustrative of the invention and their contents.

Example 1: Heat-insulating formation (base material for 110, 120, or 130) [00148] In an example embodiment, the base polycrystalline material matrix comprises about 60 weight percent to about 90 weight percent glass powder, about 80 weight percent glass powder such as a bismuth boro-silicate glass or the like. Kaolin (clay) about 20 weight percent kaolin (clay). The kaolin should preferably be AS400 or finer equivalent grade at 35 pm or less particle size. Additionally, the glass powder should have a particle size of 35 pm or less. Table 1 shows an example of a material matrix composition.

Table 1: Preferred Base Glass Formulation

[00150] Example 2: P-type doped Formulation (layer 110) [00151] The following tables represent non-limiting examples and are given by way of example the present disclosure and advantages thereof.

There is a positive region or p-type doping that has the semiconductor material. For example, the first layer may include additional component materials such as Barium Titanate Oxide and Indium. In an exemplary embodiment, the first layer may be about 60 weight percent to about 90 weight percent glass powder, about 78.14 weight percent glass powder such as a bismuth boro-silicate glass or the like. Kaolin (clay), about 19.54 weight percent kaolin (clay). The polycrystalline matrix may also contain about 0.1 to about 10 weight percent Barium Titanate Oxide, more about 0.58 weight percent and about 0.1 to about 10 weight percent Indium, more about 0.58 weight percent. Embodiment of a transparent polycrystalline material matrix for the first layer 110.

[00153] Table 2: Preferred Glass Formulation - positive region (layer 110)

[00154] In another embodiment, the first layer may be about 60 weight percent to about 90 weight percent glass powder. Kaolin (clay), about 16.67 weight percent kaolin (clay). So, the polycrystalline matrix may contain about 1 to about 15 weight percent germanium, more preferably 8.33 weight percent. The polycrystalline matrix may also contain about 15 weight percent, more about 8.33 weight percent, of a trivalent impurity 210 such as Aluminum, Boron, Indium, or the like.

The presence of a first impurity 210 or a trivalent impurity such as aluminum, boron, indium, or the like, which has only three valence electrons available in its outermost orbital, prevents a fourth closed bond to be formed with the other atoms in the material matrix. This gives the polycrystalline material matrix to which it is responsible. Because an electron 230 is effectively missing near one of these trivalent impurities, a neighboring electron may be attracted to it and may move to fill the hole. However, that electron 230 will effectively leave a hole behind it, and as this process continues, the movement and exchange of electrons 230 gives it a positive charge through the crystal structure and as a result, the first layer 110 is essentially turned into a positive pole. Embodiment of a transparent polycrystalline material matrix for the first layer 110.

[00156] Table 3: Preferred Glass Formulation - Positive Region (Layer 110)

In another embodiment, the first layer comprises about 60 weight percent to about 90 weight percent poly (3,4-ethylene dioxythiopene) -poly (styrene sulfonate) or (PEDOTrPSS), preferably about 80 weight percent. Indium (III) oxides (In2O3), about 10 weight percent. The polycrystalline matrix may also contain about 1 to about 20 weight percent barium titanate oxides, especially about 10 weight percent. Embodiment of a transparent polycrystalline material matrix for the first layer 110.

Table 4: Preferred Glass Formulation - positive region (layer 110)

In another embodiment, the first layer may be about 60 weight percent to about 90 weight percent of a base material, preferably about 80 weight percent. The base material may be a polyfluorene-based cross-linked and doped with (PEDOT: PSS), polypyrrole (PPy) / poly (methyl methacrylate) (PMMA), or polyaniline (PANI). In another embodiment, the base material may be a blend of water and DMSO and polyvinyl alcohol (PVA), which has a glutaraldehyde solution blended with it to form a gel. The gel is then dehydrated with acetone and rehydrated with DMSO and allowed to In another example embodiment, the base material may be bismuth boron alumino-silicate glass. Indium (III) oxides (Ιη ^ Οβ), about 10 weight percent. The polycrystalline matrix may also contain about 1 to about 20 weight percent barium titanate oxides, especially about 10 weight percent. In an embodiment, all of the materials may be dissolved in a co-solvent such as ethylene glycol

(EG) or dimethyl sulfoxide (DMSO) to form a solution of finely-dispersed solids. Embodiment of a transparent polycrystalline material matrix for the first layer 110.

Table 5: Preferred Glass Formulation (dissolved in a co-solvent) positive region (layer 110)

Example 3: N-type doped Formulation (layer 130) [00162] The following tables represent non-limiting examples and are shown by way of example the present disclosure and advantages thereof.

In an exemplary embodiment, the third layer 130 has a negative region or n-type doping such that the semiconductor material has an abundance of free electrons 230 or current-carrying electrons component materials 240 or component materials such as Barium Titanate Oxide and Antimony Oxide. In an example embodiment, the third layer 130 may be about 60 weight percent to about 90 weight percent glass powder, preferably about 66.67 weight percent glass powder such as a bismuth boro-silicate glass or the like. Kaolin (clay), about 16.67 weight percent kaolin (clay). So, the polycrystalline matrix may contain about 1 to about 15 weight percent Barium Titanate Oxide and about 1 to about 15 weight percent Antimony Oxide, both about 8.33 weight percent. Embodiment of a transparent polycrystalline material matrix for the third layer 130.

Table 6: Preferred Glass Formulation - negative region (layer 130)

In another example embodiment, the third layer 130 may be about 60 weight percent to about 90 weight percent glass powder, about 61.54 weight percent glass powder such as a bismuth boro-silicate glass or the like. Kaolin (clay), about 15.39 weight percent kaolin (clay). So, the polycrystalline matrix may contain about 1 to about 15 weight percent Barium titanate, more about 7.69 weight percent, about 1 to about 15 weight percent Indium Tin Oxide, more about 7.69 weight percent, and about 1 to about 15 weight percent , more preferably about 7.69 weight percent, of a second impurity 220 or a pentavalent impurity such as Arsenic, Antimony, Phosphorous, or the like.

[00166] The presence of a second impurity 220 or a pentavalent impurity such as Arsenic, Antimony, Phosphorous, or the like, which has four electrons in its orbit, allows four of the five valence electrons to form bonds with the other atoms in the material matrix. 230. Because of the abundance of current-carrying electrons 230, the third layer 130 is effectively turned into a negative pole. Embodiment of a transparent polycrystalline material matrix for the third layer 130.

Table 7: Preferred Glass Formulation - negative region (layer 130)

In another embodiment, the third layer comprises about 60 weight percent to about 90 weight percent poly (3,4-ethylene dioxythiopene) -poly (styrene sulfonate) or (PEDOT: PSS), preferably about 80 weight percent. Antimony Tin Oxide (Sb20s), about 10 weight percent. The polycrystalline matrix may also contain about 1 to about 20 weight percent barium titanate oxides, especially about 10 weight percent. Embodiment of a transparent polycrystalline material matrix for the third layer 130.

[001691 Table 8: Preferred Glass Formulation - negative region (layer 130)

In another embodiment, the third layer may be about 60 weight percent to about 90 weight percent of a base material, preferably about 80 weight percent. The base material may be a polyfluorene-based cross-linked and doped with (PEDOT: PSS), polypyrrole (PPy) / poly (methylmethacrylate) (PMMA), or polyaniline (PANI). In another example embodiment, the base material may be a blend of water and DMSO and polyvinyl alcohol

In another example embodiment, the base material may be bismuth boron (PVA), which has a glutaraldehyde solution blended with it to form a gel. The gel is then dehydrated with acetone and rehydrated with DMSO and allowed to dry to a transparent gel -alumino-silicate glass. Antimony Tin Oxide (Sb20s), about 10 weight percent. The polycrystalline matrix may also contain about 1 to about 20 weight percent barium titanate oxides, especially about 10 weight percent. In an embodiment, all of the materials may be dissolved in a co-solvent such as ethylene glycol (EG) or dimethyl sulfoxide (DMSO) to form a solution of finely-dispersed solids. Embodiment of a transparent polycrystalline material matrix for the first layer 130.

Table 9: Preferred Glass Formulation - (dissolved in a co-solvent) negative region (layer 130)

Example 4: Neutral Formulation Flayer 120) The following tables represent non-limiting examples and are given by the present disclosure and are hereby incorporated by reference advantages thereof.

In an embodiment of the invention, for example, neodymium-iron-bomb, indium tin oxide, and gallium nitride. In an example embodiment, the second layer may be about 60 weight percent to about 90

weight percent glass powder, about 78.58 weight percent glass powder such as bismuth boro-silicate glass or the like. Kaolin (clay), about 19.65 weight percent kaolin (clay). So, the polycrystalline matrix may include about 0.1 to about 10 weight percent of each of Neodymium Iron-boron, Indium Tin Oxide, and Gallium Nitride, each more about 0.59 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 10: Preferred Glass Formulation - neutral region (layer 120)

In an embodiment of the invention, for example, neodymium-iron-bomb, indium tin oxide, and indium phosphide. In an example embodiment, the second layer may be about 60 weight percent to about 90 weight percent glass powder, about 78.58 weight percent glass powder such as a bismuth boro-silicate glass or the like. Kaolin (clay), about 19.65 weight percent kaolin (clay). Thus, the polycrystalline matrix may include about 0.1 to about 10 weight percent of each of Neodymium Iron-boron, Indium Tin Oxide, and Indium Phosphide, each more about 0.59 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 11: Preferred Glass Formulation - neutral region (layer 120)

In addition, the neodymium-iron-boms, indium tin oxides, indium phosphides, and aluminum gallium arsenides are also included. In an example embodiment, the second layer may contain about 60 weight percent to about 90 weight percent glass powder, about 78.14 weight percent glass powder such as a bismuth boro-silicate glass or the like. Kaolin (clay), about 19.54 weight percent kaolin (clay). So, the polycrystalline matrix may include about 0.1 to about 10 weight percent of each of Neodymium Iron-boron, Indium Tin Oxide, Indium Phosphide, and Aluminum Gallium Arsenide, each more about 0.58 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 12: Preferred Glass Formulation - neutral region (layer 120)

Indium Tin Oxide, Indium Phosphide, and Copper Indium Diselenide, for example, include Neodymium-iron-bomb, Indium Tin Oxide, Indium Phosphide, and Copper Indium Diselenide. In an example embodiment, the second layer may contain about 60 weight percent to about 90 weight percent glass powder, about 78.14 weight percent glass powder such as a bismuth boro-silicate glass or the like. Kaolin (clay), about 19.54 weight percent kaolin (clay). Thus, the polycrystalline matrix may include about 0.1 to about 10 weight percent of each of Neodymium Iron-boron, Indium Tin Oxide, Indium Phosphide, and Copper Indium Diselenide, each more about 0.58 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 13: Preferred Glass Formulation - neutral region (layer 120)

In an example embodiment, the second layer may include additional component materials such as germanium and barium titanate oxides. In an embodiment, the second layer may be a polycrystalline material matrix

about 60 weight percent to about 90 weight percent glass powder, about 66.67 weight percent glass powder such as a bismuth boro-silicate glass or the like. Kaolin (clay), about 16.67 weight percent kaolin (clay). So, the polycrystalline matrix may contain about 1 to about 15 weight percent of germanium, more preferably about 8.33 weight percent and about 1 to about 15 weight percent barium titanate oxide, more than about 8.33 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 14: Preferred Glass Formulation - neutral region (layer 120)

In an example embodiment, the second layer may include additional component materials such as germanium and indium tin oxides. In an example embodiment, the second layer may be about 60 weight percent to about 90 weight percent glass powder, preferably about 66.67 weight percent glass powder such as a bismuth boro-silicate glass or the like. Kaolin (clay), about 16.67 weight percent kaolin (clay). So, the polycrystalline matrix may contain about 1 to about 15 weight percent of germanium, more preferably about 8.33 weight percent and about 1 to about 15 weight percent Indium Tin Oxide, more than about 8.33 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 15: Preferred Glass Formulation - neutral region (layer 120)

In an example embodiment, the second layer comprises about 10 weight percent to about 90 weight percent glass powder, preferably about 40 weight percent glass powder such as a bismuth boro-silicate glass or the like. The polycrystalline material matrix comprises about 10 weight percent to about 90 weight percent. PEDOT: PSS, about 40 weight percent. Additionally, the polycrystalline material matrix accounts for about 5 weight percent to about 40 weight percent. The semiconducting materials may be finely-dispersed in

Poly (3,4-ethylenedioxythiopene) -poly (styrene sulfonates) and may include about 1 to about 15 weight percent barium titanate oxides, preferably 5 weight percent; about 1 to about 15 weight percent germanium oxides, preferably 5 weight percent; about 1 to about 15 weight percent Antimony Oxide, preferably 5 weight percent; and about 1 to about 15 weight percent indium (III) oxides, about 5 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 16: Preferred Glass Formulation - neutral region (layer 120)

In an example embodiment, the second layer comprises about 60 weight percent to about 90 weight percent glass powder, preferably about 80 weight percent glass powder such as a bismuth boro-silicate glass or the like. Additionally, the polycrystalline matrix may contain about 1 to about 10 weight percent barium titanate, more preferably about 5 weight percent; about 1 to about 10 weight percent germanium selenide, gallium arsenide, or gallium oxide, more important about 5 weight percent; about 1 to about 10 weight percent Indium Oxide, more important about 5 weight percent; and about 1 to about 10 weight percent Bismuth (III) Sulfides, more preferably about 5 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 17: Preferred Glass Formulation - neutral region (layer 120)

[00190] In an example embodiment, the second layer may include additional component materials such as antimony oxides and tellurium bromides. In an example embodiment, the second layer is approximately 60 weight percent to about 90 weight percent glass powder, preferably about 80 weight percent glass powder such as a bismuth boro-silicate glass or the like. Additionally, the polycrystalline matrix may contain about 1 to about 10 weight percent barium titanate, more than about 3.33 weight percent; about 1 to about 10 weight percent germanium selenide, gallium arsenide, or gallium oxide, more especially about 3.33 weight percent; about 1 to about 10 weight percent Indium Oxide, more about

3.33 weight percent; about 1 to about 10 weight percent Antimony Oxide, more about 3.34 weight percent; about 1 to about 10 weight percent Tellurium Bromide, more about about 3.33 weight percent; and about 1 to about 10 weight percent bismuth (III) sulfides, more or about 3.34 weight percent. Table 18 shows an example of a transparent polycrystalline material matrix for the second layer 120.

Table 18: Preferred Glass Formulation - neutral region (layer 120)

Polyfluorene-based polymer cross-linked and doped with PEDOT: PSS, about 80 weight percent polyfluorene-based polymer cross linked and doped with PEDOT: PSS. Bismuth boron-alumino-silicate glass, preferably 16 weight percent. The second layer may include semiconducting materials as about 0.1 to about 5 weight percent barium titanate oxides, preferably 1 weight percent; about 0.1 to about 5 weight percent germanium oxides, preferably 1 weight percent; about 0.1 to about 5 weight percent Antimony Oxide, preferably 1 weight percent; and about 0.1 to about 5 weight percent Indium (III) oxides, about 1 weight percent. In an embodiment, all of the materials may be dissolved in a co-solvent such as ethylene glycol (EG) or dimethyl sulfoxide (DMSO) to form a solution of finely-dispersed solids. Table 19 shows an example of a transparent polycrystalline material matrix for the second

layer 120.

Table 19: Preferred Glass Formulation (dissolved in a co-solvent) neutral region (layer 120)

In a typical embodiment, the second layer comprises about 60 weight percent to about 90 weight percent polypyrrole (PPy) / poly (methyl methacrylate) (PMMA), preferably about 80 weight percent (PPy). / (PMMA). Bismuth boron-alumino-silicate glass, preferably 16 weight percent. The second layer may include semiconducting materials as about 0.1 to about 5 weight percent barium titanate oxides, preferably 1 weight percent; about 0.1 to about 5 weight percent germanium oxides, preferably 1 weight percent; about 0.1 to about 5 weight percent Antimony Oxide, preferably 1 weight percent; and about 0.1 to about 5 weight percent Indium (III) oxides, about 1 weight percent. In an embodiment, all of the materials may be dissolved in a co-solvent such as ethylene glycol (EG) or dimethyl sulfoxide (DMSO) to form a solution of finely-dispersed solids. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 20: Preferred Glass Formulation (dissolved in a co-solvent) neutral region (layer 120)

Polyaniline (PANI), preferably about 80 weight percent (PANI), is about 60 weight percent to about 90 weight percent polyaniline (PANI). Bismuth boron-alumino-silicate glass, preferably 16 weight percent. The second layer may include semiconducting materials as about 0.1 to about 5 weight percent barium titanate oxides, preferably 1 weight percent; about 0.1 to about 5 weight percent germanium oxides, preferably 1 weight percent; about 0.1 to about 5 weight percent Antimony Oxide, preferably 1 weight percent; and about 0.1 to about 5 weight percent Indium (III) oxides, about 1 weight percent. In an embodiment, all of the materials may be dissolved in a co-solvent such as ethylene glycol (EG) or dimethyl sulfoxide (DMSO) to form a solution of finely-dispersed solids. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 21: Preferred Glass Formulation (dissolved in a co-solvent) neutral region (layer 120)

Polyaniline (PANI), preferably about 80 weight percent (PANI), is about 60 weight percent to about 90 weight percent polyaniline (PANI). Bismuth boron-alumino-silicate glass, preferably 16 weight percent. The second layer may include semiconducting materials as about 0.1 to about 5 weight percent barium titanate oxides, preferably 1 weight percent; about 0.1 to about 5 weight percent germanium oxides, preferably 1 weight percent; about 0.1 to about 5 weight percent Antimony Oxide, preferably 1 weight percent; and about 0.1 to about 5 weight percent Indium (III) oxides, about 1 weight percent. The PANI, glass, and the semiconducting materials may be finely-dispersed in Gellan Gum (GG). In an exemplary embodiment, all of the materials may be dissolved in a co-solvent such as Ethylene glycol monopropyl ether or a polyfluorene-based cross linker. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 22: Preferred Glass Formulation (dispersed in gellan gum) - neutral region (layer 120)

In an example embodiment, the second layer comprises about 60 weight percent to about 90 weight percent (PEDOT: PSS), about 80 weight percent (PEDOT: PSS). Additionally, the polycrystalline material matrix is dispersed in Gellan Gum (GG). The second layer may

calcium cross-linked with about 5 weight percent to about 35 weight percent Calcium Chloride, about 20 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 23: Preferred Glass Formulation (dispersed in gellan gum) - neutral region (layer 120)

In an example embodiment, the second layer comprises about 60 weight percent to about 90 weight percent polymer, preferably about 80 weight percent. The polymer may be PEDOT: PSS, (PPy) / (PMMA), or PANI. Additionally, a water-soluble bis (fluorinated phenyl azide) is used to cross link the PEDOT: PSS. Bismuth boron-alumino-silicate glass, about 16 weight percent. The second layer may include semiconducting materials as about 0.1 to about 5 weight percent barium titanate oxides, about 1 weight percent; about 0.1 to about 5 weight percent germanium oxides, about 1 weight percent; about 0.1 to about 5 weight percent Antimony Oxide, about 1 weight percent; and about 0.1 to about 5 weight percent Indium (III) oxides, about 1 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 24: Preferred Glass Formulation (cross-linked with water-soluble bis (fluorinated phenyl azide) - neutral region (layer 120)

In another embodiment, the second layer may be about 60 weight percent to about 90 weight percent of a base material, preferably about 80 weight percent. Which has about 20 weight percent of polyvinyl alcohol (PVA) added to it. The gel is then dehydrated with acetone and rehydrated with DMSO and allowed to dry to a transparent gel. Additionally, the polycrystalline material matrix comprises about 10% by weight of glutaraldehyde solution to about 20 weight percent Bismuth boron alumino-silicate glass, about 16 weight percent. The second layer may include semiconducting materials as about 0.1 to about 5 weight percent barium titanate oxides, about 1 weight percent; about 0.1 to about 5 weight percent germanium oxides, about 1 weight percent; about 0.1 to about 5 weight percent Antimony Oxide, about 1 weight percent; and about 0.1 to about 5 weight percent Indium (III) oxides, about 1 weight percent. Embodiment of a transparent polycrystalline material matrix for the second layer 120.

Table 25: Preferred Glass Formulation (gel) - neutral region (layer 120)

Example 5 - Additional Compositions In another example embodiment, the base polycrystalline material matrix may include borosilicate glass (may be recycled), kaolin (clay), bismuth (ΙΠ) sulfide, aluminum oxide (Al 2 O 3), and other miscellaneous traces. In an example embodiment, the polycrystalline material matrix may include about 60 weight percent to about 90 weight percent glass powder, and about 80 weight percent glass powder may be used as a borosilicate glass or the like. Kaolin (clay), about 15 weight percent kaolin (clay) such as (Al2SβO5 (OH) 4). The polycrystalline matrix may also contain about 1 to about 10 weight percent Bismuth (III) sulfide, more preferably about 4.0 weight percent and about 0.1 to about 5 weight percent Aluminum Oxide (AI2O3), more than about 1.0 weight percent. Additionally, the material matrix may contain about 0.0 weight percent to about 1 weight percent more. Table 26 shows an example of a transparent polycrystalline material matrix for an optical grade composition. The formulation must be fired at 1.650 ° C for three hours to obtain a clear and optically transparent glass.

Table 26: Preferred Glass Formulation - Optical Grade Composition

In another example embodiment, the base polycrystalline material matrix may include borosilicate glass (may be recycled), kaolin (clay), tungsten copper composite

(W-Cu composite), barium titanate, and other miscellaneous traces. In an example embodiment, the polycrystalline material matrix may include about 60 weight percent to about 90 weight percent glass powder, and about 80 weight percent glass powder may be used as a borosilicate glass or the like. Additionally, about 10 weight percent kaolin (clay) such as (Al2Si2Os (OH) 4). The polycrystalline matrix may also include about 5 to about 15 weight percent of a tungsten copper composite (W-Cu composite), more about about 9.0 weight percent. The W-Cu composite has approximately 10 to about 40 weight percent of copper. The tungsten-copper composite exhibits a high level of thermal conductivity and low thermal expansion. Barium Titanate, more than 1.0 weight percent. Furthermore, the material matrix may contain about 0.0 weight percent to about 1 weight percent more. Table 27 shows an example of a transparent polycrystalline material matrix for a non-optical grade composition.

[00210] Table 27: Preferred Glass Formulation - Non-Optical Grade Composition

[00211] It should be understood that those skilled in the art are familiar with the art. Such changes and modifications can be made without departing from the spirit and scope of the

present subject matter and without diminishing its intended advantages. It is intended that such changes and amendments be covered by the appended claims.

[00212] ADDITIONAL ASPECTS OF THE PRESENT DISCLOSURE

[00213] Aspects of the subject matter described herein may be used alone or in combination with any one or more of the other aspect. Photo-magneto-electric cell includes a first layer including at least one first impurity that creates a positive region within the first layer, a second layer at least one components, and a third layer, including the second layer, and the third layer The Freed electrons can flow to the second layer third layer and used as electricity.

[00214] In accordance with a second aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the second layer and the third layer are transparent.

[00215] In accordance with a third aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof, the first layer includes a plurality of freely moving positively charged carriers, and the third layer includes a of moving electrons.

[00216] In the present disclosure, which is hereby incorporated by reference, the first impurity is doping a valence electron, and the second impurity includes an additional electron.

[00217] In accordance with a fifth aspect of the present disclosure which is incorporated herein by reference, the photo-magneto-electric cell absorbs non-visible light and is transparent to visible light.

[00218] In accordance with a sixth aspect of the present disclosure which is incorporated herein by reference, the photo-magneto-electric cell includes an electrical circuit which draws electrical current from the first layer and the third layer so that the electrical current can be used as electricity.

[00219] In accordance with a seventh aspect of the present disclosure, which may be used in conjunction with any other aspect or combination of embodiment listed herein. (ii) the third layer is adjacent to the second layer; (iii) a first intermediate element lies between the first and second layers; and (iv) a second intermediate element between the second and third layers.

[00220] In at least one embodiment of the present disclosure, which is incorporated herein by reference, at least one of the transparent first layer, the transparent second layer and the transparent third layer includes a polycrystalline material matrix.

[00221] In accordance with one aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, at least one of the transparent first layer, the transparent second layer and the transparent third layer includes An electrically conducting tough gel.

[00222] In accordance with any aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof, the polycrystalline material matrix includes at least one of: (i) bismuth boro-silicate glass; (ii) poly (3,4-ethylenedioxythiopene) -poly (styrenesulfonates); (iii) polyvinyl alcohol and DMSO based gel; (iv) barium titanate oxides; (v) germanium oxides; (vi) antimony oxides; and (vii) indium (III) oxides.

[00223] In accordance with an aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the component material includes at least one of: (i) encapsulated photo-luminescent materials; (ii) encapsulated magnetic materials; (iii) encapsulated photoconductive materials; and (iv) encapsulated semiconducting materials.

[00224] In accordance with a twofth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed hereinbefore. (I) barium titanate oxides; (ii) germanium oxides; (iii) antimony oxides, (iv) indium (III) oxides; (v) indium tin oxide; (vi) indium phosphides; (vii) gallium nitrides; Aluminum gallium arsenide; (viii) Copper Indium Diselenides; (ix) a trivalent impurity; and (x) a pentavalent impurity.

[00225] In accordance with the present disclosure, which may be used in combination with any other aspect of the invention, the photo-magneto-electric cell is included in a window or a computer screen.

[00226] In accordance with the present disclosure, which is incorporated herein by reference, the photo-magneto-electric cell is incorporated in an architectural façade or protective casing.

Photo-magneto-electric cell includes a transparent sheet that allows light to pass therethrough; Electrical and chemical process. The electricity and the electricity generated by the electrical system are isolated from each other electrons in the transparent sheet so that the electrical current can be used as electricity.

[00228] In accordance with a sixth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the transparent sheet includes: (i) a first layer including at least one first impurity that creates a positive region within the first layer; (ii) a second layer including at least one component material; and (iii) a third layer including at least one second impurity that creates a negative region within the third layer.

[00229] In accordance with a seventeenth aspect of the present disclosure, which may be used in combination with any other aspect of the invention, the second layer is between the first layer and the third layer so as to create a depletion The second layer after the boundary layer has been formed so far that the freed electrons can flow to the third layer and use as electricity.

[00230] In accordance with an aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the second layer is between the first layer and the third layer, and further comprising a first outer layer adjacent to the first layer and a second outer layer adjacent to the third layer.

[00231] In accordance with an aspect of the present disclosure, which is incorporated herein by reference in its entirety, the magnetic component is incorporated herein by reference.

[00232] In accordance with a twentieth aspect of the present disclosure, which is hereby incorporated herein by reference in its entirety.

[00233] In accordance with a twenty-first aspect of the present disclosure which is incorporated herein by reference in its entirety. 1. In accordance with a twenty-second aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof, the magnetic component includes at least one magnet positioned within the third layer.

[00234] In accordance with a twenty-third aspect of the present disclosure, which may be used in conjunction with any other aspect of the invention layer and at least one magnet placed on the outer side of the second outer layer.

[00235] In accordance with a twenty-fourth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein. (ii) a cathode; and (iii) a magnetic electrode.

[00236] In accordance with a twenty-fifth aspect of the present disclosure, which may be used in conjunction with any other aspect of the invention.

[0023] In accordance with a twenty-sixth aspect of the present disclosure, which may be used in conjunction with any other aspect or combination of aspect listed herein first layer; (ii) a cathode in electrical communication with the third layer; and (iii) at least one magnetic electrode in electrical communication with the second layer.

In accordance with a twenty-seventh aspect of the present disclosure, which may be used in combination with any other aspect or combination of the listed herein.

[00239] In accordance with a twenty-eighth aspect of the present disclosure, which may be used in conjunction with any other aspect or combination of the terms herein, the wire component is coiled around the magnetic component.

[00240] In accordance with a twenty-ninth aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof, the magnetic component is a compound of magnets, and the wire component is coiled around the of magnets.

[00241] In accordance with a thirtieth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein.

[00242] In accordance with a first-half aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof; Least one second wire constructed of a second material.

[00243] In accordance with a thirty-second aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed hereinbefore, the first material includes at least one of: (i) copper; (ii) enameled copper; and (iii) copper-clad steel (CCS) wire.

[00244] In accordance with a thirty-third aspect of the present disclosure, which may be used in combination with any other aspect of the invention, the second material is a high temperature superconducting (HTS) wire.

[00245] In accordance with a thirty-fourth aspect of the present disclo sure, which may be used in conjunction with any other aspect or combination thereof, the magnetic component includes a first magnet and a second magnet, the at least one first wire is coiled around the first magnet, and at least one second wire is coiled around the second magnet.

[00246] In accordance with a thirty-fifth aspect of the present disclosure, which may be used in combination with any other aspect of the invention, the magnetic component includes a first magnet and a second magnet wire is coiled around the first magnet in the first layer and the second magnet in the third layer, and at least one second wire is positioned in the second layer.

[00247] In accordance with a thirty-sixth aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof, the electrical circuit includes at least one inductor coil.

[00248] In accordance with a thirty-seventh aspect of the present disclosure, which may be used in conjunction with any other aspect or combination of aspect listed herein.

[00249] In accordance with the present disclosure, which is hereby incorporated by reference herein, the electrical circuit includes a first wire coiled around the magnetic component A first end and a second end, and second end, and second end, respectively, are connected to a second magnetic electrode coiling the first wire into a puzzle of loops.

[00250] In accordance with a third aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof, the electrical circuit includes at least one metal bar inductor Electrodes.

In accordance with a fortuitous aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof, the at least one metal bar inductor includes metal bar inductors positioned on opposite sides of the transparent sheet ,

In accordance with a forty-first aspect of the present disclosure, which may be used in combination with any other aspect or combination thereof, the magnetic component includes a magnet to secure the release of magnets to the first outer layer and the second outer layer.

In accordance with a forty-second aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed, the at least one bar is a polyurethane (PU) coated steel bar.

In accordance with a forty-third aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed in, a method of making a photo-magneto-electric cell includes forming a first layer with at least one first impurity that creates a positive region within the first layer; forming a second layer with at least one component material; forming a third layer with at least one second impurity that creates a negative region within the third layer; and combining the first layer, the second layer, and the third layer so that the second layer is between the first layer and the third layer.

[00255] In accordance with a forty-fourth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the method includes generating electricity as light strikes the second layer.

[00256] In accordance with a forty-fifth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the method includes forming a first outer layer; forming a second outer layer; positioning the first outer layer adjacent to the first layer; and positioning the second outer layer adjacent to the third layer.

In accordance with a forty-sixth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed in, forming the first layer includes coating the first outer layer with the first layer, forming the The second layer includes coating the second layer and the second layer comprises the second layer.

In accordance with a forty-seventh aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein the first layer with a first pattern of removable material; coating the first layer with a clear coat; removing the first pattern of material to expose a first uncovered pattern on the first layer; filling the first uncovered pattern of the first layer with second layer material; cast configuring the third layer with a second pattern of removable material; coating the third layer with a clear coat; removing the second pattern of material to expose a second uncovered pattern on the third layer; and filling the second uncovered pattern of the third layer with the second layer material.

[00259] In accordance with a forty-eighth aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof, the method of manufacturing a polycrystalline material matrix includes: base material; adding at least one component material; stirring the mixture of the at least one liquid material and the at least one component material; and allowing the mixture to gel.

[00260] In accordance with a forty-ninth aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof, the method includes blending the mixture of at least one liquid material with at least one of: (i) water; (ii) DMSO; (iii) polyvinyl alcohol; and (iv) glutaraldehyde solution.

[00261] In accordance with an aspect of the present disclosure, which may be used in combination with any other aspect or combination thereof, the method includes removing water from the gel to form a dehydrated gel; and rehydrating the dehydrated gel with a first liquid to form a hydrated gel.

[00262] In accordance with a fifty-first aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the first liquid is DMSO.

[00263] In accordance with a fifty-second aspect of the present disclosure, which may be used in conjunction with any other aspect or combination of aspect listed herein; and processing the transparent gel with gamma irradiation.

[00264] In accordance with a fifty-third aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, IND. CLAIM

[00265] In accordance with a fifty-fourth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the method includes adding fluid to the fused material prior to milling.

[00266] In accordance with a fifty-fifth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, at least one base material includes at least one of: (i) bismuth boro -silicate glass; (ii) kaolin; (iii) poly (3,4-ethylenedioxythiopene) -poly (styrenesulfonates) (PEDOT: PSS); (iv) polypyrroles (PPY); (v) poly (methyl methacrylate) (PMMA); (vi) polyanilines (PANI); (vii) Gellan gum; and (viii) a gel formed from DMSO, polyvinyl alcohol, and glutaraldehyde solution.

[00267] In accordance with a fifty-sixth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein base material and about 10 to about 40 weight percent of a second base material.

[00268] In accordance with a fifty-seventh aspect of the present disclosure, which may be used in conjunction with any other aspect or combination of aspect listed herein. (ii) poly (3,4-ethylenedioxythiopene) -poly (styrenesulfonate) PEDOT: PSS; (iii) polypyrroles (PPy) / poly (methyl methacrylate) (PMMA); (iii) polyanilines (PANI); and (iv) a DMSO, polyvinyl alcohol, and glutaraldehyde based gel.

[00269] In accordance with a fifty-eighth aspect of the present disclosure, which may be used in combination with any other aspect or combination of second to none; (i) kaolin; and (ii) bismuth boro-silicate glass.

[00270] In accordance with a fifty-ninth aspect of the present disclosure, which may be used in conjunction with any other aspect or combination of the principles listed herein, (i) soda-lime glass, (ii) bismuth silicate glass, (iii) borosilicate glass, or (iv) bismuth-boro silicate glass.

[00271] In accordance with a sixtieth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed hereinbefore, (a) barium fluoride, (i) ii) barium titanate oxides; (iii) indium; (iv) indium oxides; (v) germanium; (vi) aluminum; (vii) Boron; (viii) indium (III) oxides; (ix) antimony oxides; (x) barium titanates; (xi) indium tin oxide; (xii) arsenic; (xiii) antimony; (xiv) phosphorous; (xv) neodymium-iron-boron; (xvi) gallium nitrides; (xvii) indium phosphides; (xix) aluminum gallium arsenide; (xx) Copper Indium Diselenides; (xxi) germanium oxides; (xxii) bismuth sulfides, (xxiii) tellurium bromides, and (xxiv) calcium chlorides.

In accordance with a sixty-first aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the at least one component material comprises about 5 to about 35 weight percent calcium chlorides.

[00273] In accordance with a sixty-second aspect of the present disclosure, which may be used in conjunction with any other aspect or combination of aspect listed herein material and about 0.1 to about 10 weight percent a second component material.

In accordance with a sixty-third aspect of the present disclosure which is incorporated herein by reference, the first component material is barium titanate oxide and the second component material at least one of: (i) indium; and (ii) indium (III) oxides.

[00275] In accordance with a sixty-fourth aspect of the present disclosure, which may be used in conjunction with any other aspect or combination of aspect listed herein material, about 0.1 to about 10 weight percent a second component material, and about 0.1 to about 10 weight percent a third component material.

[00276] In accordance with a sixty-fifth aspect of the present disclosure which is incorporated herein by reference, the first component material is neodymium-iron-bom, the second component material is indium Tin Oxide, and the third component material at least one of: (i) indium phosphides; (ii) gallium nitrides; and (iii) germanium oxides.

[00277] In accordance with a sixty-sixth aspect of the present disclosure, which may be used in conjunction with any other aspect or combination of aspect listed herein material.

[00278] In accordance with a sixty-seventh aspect of the present disclosure, which may be used in combination with any other aspect of the invention, the fourth component material includes at least one of: (i) aluminum gallium arsenide; (ii) Coper Indium Diselenide; and (iii) antimony oxides.

[00279] In accordance with a sixty-eighth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein material and about 1 to about 20 weight percent a second component material.

[00280] In accordance with a sixty-ninth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed hereinbefore. (I) barium titanate oxides; and (ii) indium tin oxide.

In accordance with a seventh aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the second component material includes at least one of: (i) germanium oxides; (ii) germanium; (iii) antimony oxides; (iv) antimony tin oxide; (v) indium (III) oxides; (vi) indium tin oxide; and (vii) a trivalent impurity.

In accordance with a seventh-first aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the trivalent impurity includes at least one of: (i) aluminum; (ii) boron; and (iii) indium.

In accordance with a seventy-second aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein component material.

[00284] In accordance with a seventh-third aspect of the present disclosure, which may be used in conjunction with any other aspect or combination thereof, the third component material is a pentavalent impurity, including at least one of: (i) Arsenic; (ii) antimony; and (iii) phosphorous.

In accordance with a seventy-fourth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the at least one component material includes about 1 to about 20 weight percent barium titanate oxides ; about 1 to about 20 weight percent germanium oxides; about 1 to about 20 weight percent Antimony Oxide; and about 1 to about 20 weight percent indium (III) oxides.

[00286] In accordance with a seventy-fifth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein region within the first layer; a second layer including at least one component material; The third layer of the layer is the second layer of the layer. The electrons are flown out of the third layer The free-flowing electrons from the second layer and the second layer have been formed used as electricity.

In accordance with a seventh-sixth aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, a photo-magneto-electric cell includes a transparent sheet that allows light to pass therethrough ; The electrical current can be used as an electrical current. The electrical current can be used as an electrical current.

In accordance with a seventy-seventh aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, the transparent sheet of the photo-magneto-electric cell includes a first outer layer, a first layer, a second layer, a third layer, and a second outer layer.

[00289] In accordance with a seventh-eighth aspect of the present disclosure, which may be used in combination with any other aspect or combination thereof, the first layer includes a cathode region and a first intermediate layer, and the third layer includes an anode region and a second intermediate layer.

[00290] In accordance with a seventy-ninth aspect of the present disclosure, which may be used in combination with any other aspect or combination of the invention, the photo-magneto-electric cell includes at least one wire and at least one magnetic component.

[00291] In accordance with any aspect of the present disclosure, which may be used in combination with any other aspect or combination of aspect listed herein, at least one of: (i) the first intermediate layer; and (ii) the second intermediate layer is composed of polydimethylsiloxane (PDMS).

[00292] In accordance with an eight-first aspect of the present disclosure, which may be used in combination with any other aspect or combination of the above first intermediate layer and a second group of concentric rings within the second intermediate layer. Each concentric ring in the first group of concentric rings and the second group of concentric rings are connected in series by the at least one wire concentric rings includes an outer ring and an inner ring, and the magnetic component is placed within the first group of concentric rings and the second group of concentric rings.

Claims (81)

A photo-electromagnetic cell comprising: a first layer including at least a first impurity that generates a positive region in the first layer; a second layer including at least one component material; and a third layer including at least a second impurity that creates a negative region in the third layer; wherein the second layer is disposed between the first layer and the third layer to create a depletion region that allows electrons to flow from the third layer to the first layer until a boundary is formed in the second layer, wherein the at least one Component material Eliminates electrons from the second layer when light strikes the second layer after the boundary has been formed, so that the liberated electrons can flow to the third layer and be used as electricity. 2. The photoelectromagnetic cell of claim 1, wherein the first layer, the second layer and the third layer are transparent. The photoelectromagnetic cell of claim 1, wherein the first layer includes a plurality of free-moving positively charged carriers and the third layer includes a plurality of free-moving electrons. The photoelectromagnetic cell of claim 1, wherein the first impurity lacks a valence electron and the second impurity contains an additional valence electron. A photoelectromagnetic cell according to claim 1, which absorbs non-visible light and is transparent to visible light. The photoelectromagnetic cell of claim 1, further comprising a circuit that draws electric current from the first layer and the third layer so that the electric current can be used as electricity. The photoelectromagnetic cell of claim 1, wherein: (i) the second layer is directly adjacent to the first layer; (ii) the third layer is directly adjacent to the second layer; (iii) a first intermediate element lies between the first and the second layer and / or (iv) a second intermediate element lies between the second and the third layer. The photoelectromagnetic cell of claim 1, wherein the translucent first layer, the translucent second layer and / or the translucent third layer comprise a polycrystalline material matrix. 9. The photo-electromagnetic cell according to claim 1, wherein the translucent first layer, the translucent second layer and / or the translucent third layer include an electrically conductive tough gel. The photoelectromagnetic cell of claim 8, wherein the polycrystalline material matrix includes: (i) bismuth borosilicate glass; (ii) poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate); (iii) polyvinyl alcohol and DMSO based gel; (iv) barium titanate oxide; (v) germanium oxide; (vi) antimony oxide and / or (vii) indium (III) oxide. 11. The photoelectromagnetic cell of claim 1, wherein the component material includes: (i) encapsulated photoluminescent materials; (ii) encapsulated magnetic materials; (iii) encapsulated photoconductive materials and / or (iv) encapsulated semiconductive materials. The photoelectromagnetic cell of claim 1, wherein the component material includes: (i) barium titanate oxide; (ii) germanium oxide; (iii) antimony oxide; (iv) indium (III) oxide; (v) indium tin oxide; (vi) indium phosphide; (vii) gallium nitride; aluminum gallium arsenide; (viii) copper indium diselenide; (ix) a trivalent impurity and / or (x) a pentavalent impurity. A photoelectromagnetic cell according to claim 1, which is contained in a window or a computer screen. 14. A photoelectromagnetic cell according to claim 1, which is included in an architectural facade or a protective housing. 15. A photoelectromagnetic cell comprising: a translucent film that allows the light to pass therethrough; a plurality of electrodes in electrical communication with the translucent film and a magnetic component configured to direct free electrons in the translucent film toward the plurality of electrodes, the plurality of electrodes being part of a circuit configured to receive electrical power to pull the free electrons in the translucent film, so that the electric current can be used as electricity. The photoelectromagnetic cell of claim 15, wherein the transparent film includes: (i) a first layer including at least a first impurity that creates a positive region in the first layer; (ii) a second layer comprising at least one component material; and (iii) a third layer that includes at least one second impurity that creates a negative region in the third layer. 17. The photoelectromagnetic cell of claim 16, wherein the second layer is disposed between the first layer and the third layer to create a depletion region that allows electrons to flow from the third layer to the first layer until a boundary in the second layer Layer is formed, and the at least one component material liberates electrons from the second layer when light impinges on the second layer after the boundary has been formed, so that the liberated electrons can flow to the third layer and can be used as electricity. 18. The photoelectromagnetic cell of claim 16, wherein the second layer is disposed between the first layer and the third layer, and further comprising a first outer layer adjacent to the first layer and a second outer layer adjacent to the third layer , includes. The photoelectromagnetic cell of claim 15, wherein the magnetic component is contained as a component material in the translucent film. The photoelectromagnetic cell of claim 15, wherein the magnetic component includes a plurality of magnets. 21. The photoelectromagnetic cell of claim 20, wherein the plurality of magnets are positioned in the translucent film. The photoelectromagnetic cell of claim 16, wherein the magnetic component includes at least one magnet positioned in the first layer and at least one magnet positioned in the third layer. 23. The photoelectromagnetic cell of claim 18, wherein the magnetic component includes at least one magnet positioned on an outer side of the first outer layer and at least one magnet positioned on an outer side of the second outer layer. 24. The photoelectromagnetic cell of claim 15, wherein the plurality of electrodes includes: (i) an anode; (ii) a cathode and / or (iii) a magnetic electrode. The photoelectromagnetic cell of claim 24, wherein the magnetic component includes the magnetic electrode. The photoelectromagnetic cell of claim 16, wherein the plurality of electrodes includes: (i) an anode in electrical communication with the first layer; (ii) a cathode in electrical communication with the third layer; and (iii) at least one magnetic electrode in electrical communication with the second layer. 27. The photoelectromagnetic cell of claim 15, wherein the circuit includes a wire component in electrical communication with the plurality of electrodes. The photoelectromagnetic cell of claim 27, wherein the wire component is wound around the magnetic component. 29. The photoelectromagnetic cell of claim 28, wherein the magnetic component includes a plurality of magnets, and wherein the wire component is wound around the plurality of magnets. The photoelectromagnetic cell of claim 29, wherein the wire component includes a plurality of wires. The photoelectromagnetic cell of claim 30, wherein the plurality of wires includes at least one first wire constructed of a first material and at least one second wire constructed of a second material. 32. The photoelectromagnetic cell of claim 31, wherein the first material includes: (i) copper; (ii) painted copper and / or (iii) copper-clad steel wire (CCS wire). A photoelectromagnetic cell according to claim 31, wherein the second material is a high temperature superconducting wire (HTS wire). 34. The photoelectromagnetic cell of claim 31, wherein the magnetic component includes a first magnet and a second magnet, wherein the at least one first wire is wound around the first magnet and the at least one second wire is wound around the second magnet. 35. The photoelectromagnetic cell of claim 31, wherein the magnetic component includes a first magnet and a second magnet, wherein the at least one first wire is wound around the first magnet in the first layer and the second magnet in the third layer and the at least one second wire is positioned in the second layer. 36. The photoelectromagnetic cell of claim 15, wherein the circuit includes at least one inductor coil. 37. The photoelectromagnetic cell of claim 36, wherein the inductor coil is formed by winding a wire component into a plurality of turns. 38. The photoelectromagnetic cell of claim 37, wherein the circuit includes a first wire wound around the magnetic component, the first wire having a first end and a second end, the first end being in electrical communication with a first magnetic electrode is coupled to the second layer and the second end is coupled to a second magnetic electrode in electrical communication with the second layer, wherein the inductor coil is formed by winding the first wire into multiple turns. 39. The photoelectromagnetic cell of claim 15, wherein the circuit includes at least one metal land inductor in electrical communication with the plurality of electrodes. 40. The photoelectromagnetic cell of claim 39, wherein the at least one metal fin inductor includes metal fin inductors positioned on opposite sides of the translucent sheet. 41. The photoelectromagnetic cell of claim 18, wherein the magnetic component includes a plurality of magnets and includes at least one land configured to secure the plurality of magnets to the first outer layer and the second outer layer. 42. The photoelectromagnetic cell according to claim 41, wherein the at least one web is a polyurethane (PU) coated steel web. 43. A method of making a photoelectromagnetic cell, the method comprising: forming a first layer having at least a first impurity that creates a positive region in the first layer; Forming a second layer with at least one component material; Forming a third layer having at least one second impurity that creates a negative region in the third layer; and combining the first layer, the second layer, and the third layer such that the second layer is disposed between the first layer and the third layer. 44. The method of claim 43, including generating electricity when light impinges on the second layer. 45. The method of claim 43, further comprising: forming a first outer layer; Forming a second outer layer; Positioning the first outer layer adjacent to the first layer and positioning the second outer layer adjacent to the third layer. 46. The method of claim 45, wherein forming the first layer includes coating the first outer layer with the first layer, forming the third layer includes coating the second outer layer with the third layer, and forming the second layer comprises coating Includes sections of the first layer and the third layer with the second layer. 47. The method of claim 46, wherein coating portions of the first layer and the third layer with the second layer comprises: cast-configuring the first layer with a first pattern of a removable material; Coating the first layer with a clearcoat; Removing the first material pattern to expose a first uncovered pattern on the first layer; Filling the first uncovered pattern of the first layer with material of the second layer; Casting configuring the third layer with a second pattern of a removable material; Coating the third layer with a clearcoat; Removing the second material pattern to expose a second uncovered pattern on the third layer; and filling the second uncovered pattern of the third layer with the material of the second layer. 48. A method of producing a polycrystalline material matrix, comprising: mixing a mixture of at least one liquid base material; Adding at least one component material; Stirring the mixture of the at least one liquid base material and the at least one component material and allowing the stirred mixture to gel. 49. The process of claim 48 including mixing the mixture of at least one liquid base material with the following: (i) water; (ii) DMSO; (iii) polyvinyl alcohol and / or (iv) glutaraldehyde solution. The method of claim 48, further comprising: withdrawing water from the gel to form a dehydrated gel; and rehydrating the dehydrated gel with a first liquid to form a hydrated gel. 51. The method of claim 50, wherein the first liquid is DMSO. 52. The method of claim 50, further comprising: drying the hydrated gel to form a translucent gel; and working the translucent gel with gamma irradiation. 53. A method of producing a polycrystalline material matrix, comprising: mixing at least one base material and at least one component material; Sintering the mixture of the at least one base material and the at least one component material to form a fused material; Milling the fused material to produce pellets; and forming a sheet of polycrystalline material matrix from the pellets. 54. The method of claim 53, further comprising adding a lubricating fluid to the fused material prior to milling. 55. The method of claim 53, wherein the at least one base material includes: (i) bismuth borosilicate glass; (ii) kaolin; (iii) poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDOT: PSS); (iv) polypyrrole (PPy); (v) poly (methyl methacrylate) (PMMA); (vi) polyaniline (PANI); (vii) gellan and / or (viii) a gel formed from DMSO, polyvinyl alcohol and glutaraldehyde solution. 56. The method of claim 53, wherein the at least one base material comprises about 60 to about 90 weight percent of a first base material and about 10 to about 40 weight percent of a second base material. 57. The method of claim 56, wherein the first base material includes: (i) glass; (ii) poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate), PEDOT: PSS; (iii) polypyrrole (PPy) / poly (methyl methacrylate) (PMMA); (iii) polyaniline (PANI) and / or (iv) a DMSO, polyvinyl alcohol and glutaraldehyde based gel. 58. The method of claim 56, wherein the second base material includes: (i) kaolin and / or (ii) bismuth borosilicate glass. 59. The method of claim 57, wherein the glass is selected from the group consisting of (i) soda lime glass, (ii) bismuth silicate glass, (iii) borosilicate glass, or (iv) bismuth borosilicate glass. 60. The method of claim 53, wherein the at least one component material includes: (i) barium fluoride, (ii) barium titanate oxide; (iii) indium; (iv) indium oxide; (v) germanium; (vi) aluminum; (vii) boron; (viii) indium (III) oxide; (ix) antimony oxide; (x) barium titanate; (xi) indium tin oxide; (xii) arsenic; (xiii) antimony; (xiv) phosphorus; (xv) neodymium-iron-boron; (xvi) gallium nitride; (xvii) indium phosphide; (xix) aluminum gallium arsenide; (xx) copper indium diselenide; (xxi) germanium oxide; (xxii) bismuth sulfide, (xxiii) tellurium bromide and / or (xxiv) calcium chloride. 61. The method of claim 53, wherein the at least one component material comprises about 5 to about 35 weight percent calcium chloride. 62. The method of claim 53, wherein the at least one component material comprises about 0.1 to about 10 weight percent of a first component material and about 0.1 to about 10 weight percent of a second component material. 63. The method of claim 62, wherein the first component material is barium titanate oxide and the second component material includes: (i) indium and / or (ii) indium (III) oxide. 64. The method of claim 53, wherein the at least one component material comprises about 0.1 to about 10 weight percent of a first component material, about 0.1 to about 10 weight percent of a second component material, and about 0.1 to about 10 weight percent of a third component material. 65. The method of claim 64, wherein the first component material is neodymium-iron-boron, the second component material is indium-tin oxide, and the third component material includes: (i) indium phosphide; (ii) gallium nitride and / or (iii) germanium oxide. 66. The method of claim 64, wherein the at least one component material further comprises about 0.1 to 10 weight percent of a fourth component material. 67. The method of claim 66, wherein the fourth component material includes: (i) aluminum gallium arsenide; (ii) copper indium diselenide and / or (iii) antimony oxide. 68. The method of claim 53, wherein the at least one component material comprises about 1 to about 20 weight percent of a first component material and about 1 to about 20 weight percent of a second component material. 69. The method of claim 68, wherein the first component material includes: (i) barium titanate oxide and / or (ii) indium tin oxide. 70. The method of claim 68, wherein the second component material includes: (i) germanium oxide; (ii) germanium; (iii) antimony oxide; (iv) antimony tin oxide; (v) indium (III) oxide; (vi) indium tin oxide and / or (vii) a trivalent impurity. 71. The method of claim 70, wherein the trivalent contaminant includes: (i) aluminum; (ii) boron and / or (iii) indium. 72. The method of claim 68, wherein the at least one component material further comprises from about 1 to about 20 weight percent of a third component material. 73. The method of claim 72, wherein the third component material is a pentavalent impurity, which includes: (i) arsenic; (ii) antimony and / or (iii) phosphorus. 74. The method of claim 53, wherein the at least one component material comprises about 1 to about 20 weight percent barium titanate oxide, about 1 to about 20 weight percent germanium oxide; from about 1 to about 20 weight percent antimony oxide and from about 1 to about 20 weight percent indium (III) oxide A translucent window, comprising: a first layer including at least a first contaminant that creates a positive region in the first layer; a second layer including at least one component material; and a third layer including at least a second impurity that creates a negative region in the third layer; wherein the second layer is disposed between the first layer and the third layer to create a depletion region that allows electrons to flow from the third layer to the first layer until a boundary is formed in the second layer, wherein the at least one Component material Eliminates electrons from the second layer when light strikes the second layer after the boundary has been formed, so that the liberated electrons can flow to the third layer and be used as electricity. 76. A photo-electromagnetic cell comprising: a translucent film that allows the light to pass therethrough; and a plurality of electrodes in electrical communication with the translucent film, the plurality of electrodes being part of a circuit configured to draw electrical current from the free electrons in the translucent film so that the electrical current can be used as electricity. 77. The photoelectromagnetic cell of claim 77, wherein the translucent film includes a first outer layer, a first layer, a second layer, a third layer and a second outer layer. 78. The photoelectromagnetic cell of claim 78, wherein the first layer includes a cathode region, the first layer includes a first interlayer, the third layer includes an anode region, and the third layer includes a second interlayer. 79. The photoelectromagnetic cell of claim 78, further comprising at least one wire and at least one magnetic component. 80. The photoelectromagnetic cell of claim 80, wherein: (i) the first intermediate layer and / or (ii) the second intermediate layer is composed of polydimethylsiloxane (PDMS). 81. The photoelectromagnetic cell of claim 79, wherein the at least one wire is configured to form a first group of concentric rings in the first interlayer and a second group of concentric rings in the second interlayer, the first group of concentric rings through the at least one a wire is connected in series, the second group of concentric rings is connected in series by the at least one wire, each concentric ring in the first group of concentric rings and the second group of concentric rings includes an outer ring and an inner ring and the at least one magnetic component is positioned in the first group of concentric rings and the second group of concentric rings.