WO2008043233A1 - Système d'éclairage, module d'éclairage et procédé de fabrication de ces derniers - Google Patents

Système d'éclairage, module d'éclairage et procédé de fabrication de ces derniers Download PDF

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Publication number
WO2008043233A1
WO2008043233A1 PCT/CN2007/001966 CN2007001966W WO2008043233A1 WO 2008043233 A1 WO2008043233 A1 WO 2008043233A1 CN 2007001966 W CN2007001966 W CN 2007001966W WO 2008043233 A1 WO2008043233 A1 WO 2008043233A1
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WO
WIPO (PCT)
Prior art keywords
light
emitting
column
carrier substrate
layer
Prior art date
Application number
PCT/CN2007/001966
Other languages
English (en)
Chinese (zh)
Inventor
Yu-Chao Wu
Original Assignee
Hong-Yuan Technology Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/CN2006/002625 external-priority patent/WO2007140660A1/fr
Priority claimed from PCT/CN2006/003037 external-priority patent/WO2008043207A1/fr
Application filed by Hong-Yuan Technology Co., Ltd. filed Critical Hong-Yuan Technology Co., Ltd.
Priority to PCT/CN2007/001966 priority Critical patent/WO2008043233A1/fr
Priority to CA002658679A priority patent/CA2658679A1/fr
Priority to PCT/CN2007/002570 priority patent/WO2008058446A1/fr
Priority to EP07800789A priority patent/EP2085683A1/fr
Priority to AU2007321634A priority patent/AU2007321634A1/en
Priority to TW096131464A priority patent/TWI389595B/zh
Priority to CN2009100069595A priority patent/CN101482230B/zh
Publication of WO2008043233A1 publication Critical patent/WO2008043233A1/fr

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • F21V29/74—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades
    • F21V29/76—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks with fins or blades with essentially identical parallel planar fins or blades, e.g. with comb-like cross-section
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50—Cooling arrangements
    • F21V29/51—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S8/00—Lighting devices intended for fixed installation
    • F21S8/08—Lighting devices intended for fixed installation with a standard
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S362/00—Illumination
    • Y10S362/80—Light emitting diode

Definitions

  • Light emitting system Light emitting module and manufacturing method thereof
  • the present invention relates to an illumination system, a illumination module, and a method of fabricating the same, and more particularly to an illumination system having a plurality of illumination columns, a illumination module, and a method of forming the same.
  • Background technique :
  • LED Light Emitting Diode
  • the principle is as follows: Apply a voltage to the diode to drive the electrons in the diode to combine with the holes. The energy generated by the combination is released in the form of light.
  • a phosphor can be added to the structure to adjust the wavelength of the light. (color) and intensity.
  • the current method of manufacturing LEDs is generally packaged by using a single wafer plus a reflector cup, which avoids the problem that heat dissipation of multiple wafers on the same substrate is difficult.
  • the aspect is to prevent two adjacent wafers from blocking the light emitted from the sides of each other, thereby affecting the luminous efficiency.
  • the packaging of such a single wafer will increase the volume of the light-emitting module including a plurality of wafers, and the size thereof is not easily reduced. Therefore, there is a need for a novel light-emitting module structure. Summary of the invention:
  • an embodiment of the present invention provides a light emitting module, including: a carrier substrate; a plurality of light emitting columns are carried on the carrier substrate, and each of the light emitting columns includes a plurality of light emitting elements. And each of the light-emitting columns is surrounded by a light-reflecting structure; and a lens is disposed on the light-emitting column to adjust the light of the light-emitting column to form a light source; wherein the light-emitting elements each include at least one side, and wherein The positive projection surface of either side of at least one of the light-emitting elements does not completely overlap the adjacent light-emitting elements.
  • the overlapping area of the positive projection surface of either side of the at least one light-emitting element and the adjacent light-emitting elements is substantially less than 50% of the front projection surface.
  • the front projection surface of either side of the at least one light-emitting element does not substantially overlap with the adjacent light-emitting elements.
  • the light-emitting element is composed of a polygonal light-emitting chip, and the light emitted by either side of each of the light-emitting chips substantially faces the side wall of the light-reflecting structure.
  • the light-emitting column comprises a light-emitting column that emits light of a higher color temperature and a light-emitting column that emits light of a lower color temperature.
  • the light-emitting element is composed of a polygonal light-emitting chip, and each light-emitting chip includes a diagonal line extending from two end points, and the light-emitting chip is parallel to the diagonal line.
  • the side walls of the reflective structure are arranged in a row.
  • At least one of the light-emitting columns is covered with a layer of the luminescent material in the reflective structure.
  • the bottom of the reflective structure is bonded to the carrier substrate by an adhesive, and the adhesive is mixed with a plurality of luminescent particles.
  • At least one illuminating column is covered with a luminescent material in the reflective structure to emit a first light, and at least one illuminating column does not contain a luminescent material layer to emit a second ray, and The first and second rays are mixed by the lens to output a third light.
  • the carrier substrate is a metal substrate, and the surface thereof further comprises a metal insulating layer, and the surface of the metal insulating layer further comprises a patterned conductive layer for electrically connecting the light-emitting elements.
  • the surface of the metal insulating layer is covered with a film of insulating oil.
  • the carrier substrate is an aluminum substrate
  • the metal insulating layer is an aluminum oxide layer.
  • the patterned conductive layer is formed by plasma heat curing.
  • the insulating oil film of the layer is composed of methyl silicone oil.
  • the carrier substrate is made of a silicon carbide material.
  • the projection surface of the lens facing the carrier substrate is a polygonal shape.
  • the lens is rectangular or square, and includes a circuit area on the carrier substrate on the outer side of the lens.
  • the lighting module of the present invention further includes a frame fixed to the carrier substrate, the frame including an inner frame to frame the light-emitting column, and an outer frame to frame the circuit area.
  • the reflective structure is part of the frame.
  • the lighting module of the present invention further includes an inner cover layer fixed in the reflective structure and covering the light-emitting column.
  • a lighting system including: a casing body having an opening; a heat dissipating plate fixed to the opening of the casing body to form a receiving space; and a plurality of the lighting modules as described above, The detachable manner is fixed to the outer side surface of the heat dissipation plate; wherein a heat dissipating portion is included in the accommodating space, and is attached to the inner side surface of the heat dissipation plate.
  • the heat dissipating portion includes: a plurality of heat pipes, which are attached to the inner side of the support plate, wherein the support plate serves as a heat dissipating plate; and a plurality of heat dissipating blocks are attached to the inner side of the support plate and The heat pipe is embedded; and a plurality of honeycomb heat dissipation ceramic structures are attached to the inner side surface of the support plate and the heat dissipation block.
  • the illumination system of the present invention further includes a power-free heat sink fixed to the housing body or the receiving space.
  • the carrier substrate of the illumination module is a part of the housing body
  • a further embodiment of the present invention provides a method for manufacturing a light emitting module, comprising: providing a carrier substrate; and fixing a reflective structure on the carrier substrate, wherein the reflective structure comprises a plurality of column spaces; respectively An element is formed on the carrier substrate in the column space to form a light-emitting column; and a lens is provided to cover the light-emitting column and the light-reflecting structure to adjust the light of the light-emitting column to form a light source;
  • the light-emitting elements each include at least one side and are arranged such that the positive projection surface of either side of at least one of the light-emitting elements does not completely overlap the adjacent light-emitting elements.
  • the lens is formed by: providing a circular or elliptical lens; and cutting four arc sides to leave a polygonal lens.
  • the area of the projection surface of the polygonal lens accounts for 2 to 2/3 of the area of the projection surface of the circular or elliptical lens.
  • the method for manufacturing a light-emitting module according to the present invention further includes forming at least one layer of luminescent material in one of the column spaces to cover the light-emitting element, and forming the luminescent material layer includes the following steps 1 or 2 Step 1: Applying the phosphor particles to the column space by spraying; Step 2: mixing a plurality of phosphor particles with a liquid without a binder to form a mixed solution; filling the mixture in the column And removing the liquid to agglomerate the phosphor particles into a phosphor particle layer.
  • the method for manufacturing the light-emitting module of the present invention further includes: forming an insulating layer on the carrier substrate; forming a patterned conductive layer on the insulating layer; and forming an insulation on the insulating layer of the carrier substrate
  • the oil film seals the possible leakage path.
  • the carrier substrate is an aluminum substrate
  • the method further comprises: forming an aluminum oxide layer on the surface of the aluminum substrate by anodizing; sintering at a high temperature of 400-600 degrees Celsius
  • the method comprises printing conductive ink on the aluminum oxide layer to form a patterned conductive layer; and when cooling to below 350 degrees Celsius, immersing in an insulating oil having a temperature above 100 degrees Celsius to buffer the conductive ink and oxidize A stress between the aluminum layer and the aluminum substrate forms an insulating oil film on the aluminum oxide layer to seal a possible leakage path.
  • the insulating oil is a silicone-based silicone oil.
  • the conductive ink comprises a plasma or a solder paste.
  • the method for fabricating a light emitting module according to the present invention further includes the step of forming an inner cover layer to cover the light emitting columns.
  • Another embodiment of the present invention provides a lighting module, including:
  • each of the light-emitting columns includes a plurality of light-emitting elements, and each of the light-emitting columns is surrounded by a light-reflecting structure; and a lens is disposed on the light-emitting column to Adjusting the light of the light-emitting column to form a light source; wherein, at least one first light-emitting column emits a first light having a first color temperature, and at least one second light-emitting column emits a second light having a second color temperature, and passes The lens mixes the first and second rays to output a third ray having a third color temperature.
  • the third color temperature value is between the first color temperature value and the second color temperature value.
  • the light-emitting elements of the first and second light-emitting columns are covered with a layer of luminescent material.
  • the first illuminating column is covered with a luminescent material in the reflective structure to emit a first light
  • the second illuminating column does not contain a luminescent material layer to emit a second ray. And mixing the first and second rays through the lens to output a third light.
  • the illuminating system, the illuminating module and the manufacturing method thereof can effectively guide the light emitted from the side of the illuminating chip, and the solid shield faces the side reflecting surface of the reflective structure without being blocked by other illuminating wafers. Therefore, the luminous efficiency can be effectively improved.
  • FIG. 1 is a partial cross-sectional view of a light emitting module according to an embodiment.
  • FIG. 2A is a partial cross-sectional view of a light emitting module according to another embodiment.
  • FIG. 2B illustrates the arrangement of the light-emitting elements in the light-emitting column of FIG. 1.
  • FIG. 3 is a schematic diagram of a combination of a light emitting module according to an embodiment.
  • FIG. 4 is a schematic diagram of a combination of a light emitting module according to another embodiment.
  • 5A-5B illustrate a lens crust of an embodiment and a method of fabricating the same.
  • FIG. 6 is a schematic diagram showing the combination of a light emitting module and a lens structure according to an embodiment.
  • FIG. 7 is a schematic diagram of a lighting device combining a plurality of light emitting modules according to an embodiment.
  • Figure 8 is a diagram showing a heat dissipating portion used in an embodiment of the lighting device of Figure 7.
  • Figure 9 illustrates a heat sink used in another embodiment of the illumination device.
  • Figure 10 is a diagram showing a heat dissipating portion used in another embodiment of the lighting device of Figure 7.
  • FIG. 11 is a schematic diagram of a light emitting module having a light emitting column emitting light of different color temperatures according to an embodiment.
  • FIG. 12 is a schematic diagram of a light emitting module having a light-emitting column emitting light of different color temperatures according to another embodiment. Best practice:
  • a light-emitting module having a light-reflecting structure and a heat-conducting method thereof, and a lighting device of a plurality of light-emitting module combinations, and a manufacturing method of the light-emitting module are mainly illustrated, but these embodiments are only used.
  • the invention is illustrated and not intended to limit the scope of the invention.
  • the term "reflective structure” generally refers to a closed structure.
  • a rectangular shape such as a rectangle or a square, or a region surrounded by a circular reflective structure is illustrated, it is not intended to limit the scope of the present invention; in other embodiments, the reflective structure is The enclosed area can also be any other shape.
  • the retroreflective structure used in accordance with embodiments of the present invention, in addition to concentrating light from the sides of the wafer, is more resistant to heat sinking.
  • the light-reflecting structure is not limited to a single-ring structure, and may include a plurality of single-ring structures or a multiple-ring structure in different embodiments, and the light-emitting columns composed of a plurality of light-emitting elements may be surrounded by the light-reflecting structure.
  • the illuminating element can be a luminescent wafer, such as a light emitting diode.
  • the illuminating module 100 includes a common carrier substrate 102 for carrying at least one illuminating column 130.
  • Each illuminating column 130 includes a plurality of illuminating elements 104, such as illuminating wafers, and each illuminating column 130 is surrounded by a reflective structure 110.
  • the reflective structure 110 includes a plurality of column spaces corresponding to the light-emitting columns 130 to fix the plurality of light-emitting elements 104 on the carrier substrate 102 in the column space.
  • the light emitting module can further include an inner cover 108 fixed in the reflective structure 110 and covering the light emitting element 104.
  • the at least one illuminating column may optionally further comprise a luminescent material layer 106 disposed on the surface of the plurality of illuminating elements 104 in the same column or on the illuminating path thereof, for example, composed of a fluorescent material, in a specific example, It may be selected to form a van der Waals force bond by drying without an adhesive.
  • the phosphor particle layer 106 completely covers the upper surface and sides of each of the light-emitting elements 104 in the same column.
  • the light emitting module can further include an inner cover layer 108 affixed in the reflective structure 110 and covering the luminescent material layer 106.
  • the area enclosed by the reflective structure 110 may be a polygon, such as a rectangle or a pentagon, or a circle or an ellipse. Please refer to the schematic diagram of the reflective structure 110 shown in FIG.
  • the inner cover layer 108 can be formed by applying a soft polymer material such as silica gel to the reflective structure, or by using a formed hard glass layer or an acrylic resin layer. The manner is directly embedded in the reflective structure 110 to be pressed against the light-emitting element 104 or the layer of luminescent material. This prevents the luminescent material layer from falling off or preventing moisture from penetrating.
  • a soft polymer material such as silica gel
  • a formed hard glass layer or an acrylic resin layer The manner is directly embedded in the reflective structure 110 to be pressed against the light-emitting element 104 or the layer of luminescent material. This prevents the luminescent material layer from falling off or preventing moisture from penetrating.
  • the light reflecting structure 110 can be used to adjust the direction of the light emitted from the light emitting element 104, For example, shielding, reflecting, collecting or focusing, therefore, when the luminescent material layer 106 does not completely cover the side of the illuminating element, the light leakage phenomenon on the side of the illuminating element 104 can be solved, and the problem of color eccentricity of the light can be improved.
  • the reflective structure 110 can generally be a metal material having a reflective surface, or a plastic body, and a reflective material layer can be formed on the surface, for example, a reflective material such as chromium, nickel, silver, zinc fluoride or magnesium sulfide is selectively plated.
  • the light-reflecting structure 110 and the light-emitting element 104 are disposed on the same surface, if a material having a better heat-dissipating property, such as polishing to form a metal material having a reflective surface, heat dissipation efficiency can be improved.
  • a lens 200 may be disposed on the light-emitting column to adjust the light of the light-emitting column to form a light source, for example, made of glass, epoxy or PE plastic to cover the substrate 102, the light-emitting element 104, and the inner cover layer 108.
  • a reflective structure 110 a reflective structure 110.
  • the lens 200 can be adhered to the carrier substrate 102 or the reflective structure 110 to form a closed cavity.
  • the sealed cavity can be a vacuum environment or filled with an inert gas to maintain stability in the closed cavity.
  • the material of the reflective structure 110 is metal, plastic or resin, such as stainless steel; and the surface of the reflective structure 110 may be selected to increase the reflection effect.
  • the phosphor particles in the phosphor particle layer 106 are free of glue, so that the luminous efficiency can be increased.
  • the number of wafers of the light-emitting element 104 is determined as needed; in this example, the wafer is a light-emitting diode.
  • the shape of the area surrounded by the reflective structure 110 may be appropriately changed as needed, for example, a rectangle, a circle, or the like; and the shape of the reflective structure 110 itself may be arbitrarily changed.
  • the cross-sectional shape thereof may be trapezoidal, triangular or curved.
  • the area enclosed by the reflective structure may be any other shape, such as a space suitable for the backlight module to fabricate a suitable elongated reflective structure.
  • the carrier substrate 102 may be a silicon carbide substrate, or a metal substrate such as an aluminum substrate in this embodiment.
  • a surface of the carrier substrate may be further formed with a planarization insulating layer 160, such as a metal oxide layer.
  • a planarization insulating layer 160 such as a metal oxide layer.
  • One embodiment is anodized on the surface of the aluminum substrate 102 to form an aluminum oxide insulating layer having a thickness of about 30 ⁇ m to 50 ⁇ m. .
  • the planarization insulating layer 160 and the substrate 102 can be tightly bonded, the thermal resistance is lowered and the heat conduction efficiency can be improved.
  • a patterned conductive layer 170 is further formed on the surface of the planarization insulating layer 160 of the carrier substrate 102 , and includes a contact pad 170 a for connecting the light emitting element 104 through the wire 190.
  • the height of the bottom of the element 104 and the contact pad 170a are such that a load-bearing portion 170b is formed on the surface of the planarization insulating layer 160 to carry the light-emitting element 104.
  • the light-emitting element 104 can be affixed to the carrier portion 170b by laser welding the patterned conductive layer 170.
  • a metal material may be selectively deposited on the planarization insulating layer 160 by electroplating or magnetron sputtering as the patterned conductive layer 170.
  • Another way is to use a screen print-conductive ink on the planarization insulating layer, and then thermally cure the conductive ink on the planarization insulating layer 160 as the patterned conductive layer 170.
  • the conductive ink may be a conductive filled thermosetting polymer resin ink, for example, a plasma composition disclosed in U.S. Patent No. 5,859,581.
  • Another embodiment is to form a patterned conductive layer including the contact pad 170a by using a high-temperature process, for example, 400-600 degrees Celsius, and a carrier portion 170b that can be closely bonded to the light-emitting chip.
  • the plasma can be mixed into the glass powder.
  • a resin material to improve the adhesion.
  • the indium material may be mixed with silver and glass powder as a plasma to form a patterned conductive layer. To increase the thermal conductivity.
  • the thin metal insulating layer structure is damaged due to the high temperature process of 400 - 600 degrees, and a leakage path is formed, so that it is possible to select a high temperature.
  • a layer of insulating oil sealing film is coated on the surface of the metal insulating layer, for example, immersed in methyl silicone oil to reduce the different stress generated by the high temperature of the metal and metal insulating layer, and the possible leakage path can be closed again.
  • an aluminum oxide layer 160 is formed on the surface of the aluminum substrate 102 by anodizing, and a conductive ink is printed on the aluminum oxide layer 160 by high-temperature sintering to form a patterned conductive layer 170.
  • the aluminum substrate 102 is cooled down to 350 degrees or less, the immersion in the insulating oil having a temperature of 100 degrees or more is reduced by the high stress generated by the high temperature of the metal and the metal insulating layer, and an insulating seal is formed on the aluminum oxide layer. Possible leakage path.
  • the aluminum substrate is previously oxidized by the anodic treatment to form an aluminum oxide layer (such as aluminum oxide), it may be necessary to form a plasma conductive line on the surface of the aluminum oxide layer, since the plasma needs about 400 - The 600 ° C skin can be cured, and the aluminum oxide layer and the aluminum substrate may have different internal stresses after being subjected to a high temperature of 400 - 600 degrees, thereby causing the plasma layer to rupture and causing plasma infiltration, forming a leakage path.
  • an aluminum oxide layer such as aluminum oxide
  • a feature of the present example is that it can be immersed in an insulating oil of about 100 to 150 degrees before it is completely cooled in the plasma thermal curing process, so that the plasma can be buffered and reduced during the cooling process after the high temperature curing plasma.
  • the different internal stresses generated by the different materials of the aluminum oxide layer and the aluminum substrate after being subjected to a high temperature of 400 to 600 degrees, and secondly, the leakage path which may be generated by the insulating oil to reclose the aluminum oxide layer, and in an embodiment, the above-mentioned cooling The process takes about 5 - 30 minutes.
  • the bottom of the carrier substrate 102 further includes a heat conducting portion 180 that can accommodate one or more heat pipes 112 to derive heat flow caused by the light emitting elements 104.
  • the surface of the heat conducting portion 180 includes one or more grooves 102a to accommodate the heat pipe 112.
  • the light emitting module 100 further selectively includes a heat sink 114 located below the carrier substrate 102. The heat dissipating portion 114 can be closely adhered to the heat conducting tube 112 and the carrier substrate 102 through the corresponding recess 112a.
  • the lower surface of the heat dissipating portion 114 may include a heat dissipating fin or a honeycomb, porous ceramic structure 115 to promote a heat dissipating effect, wherein when the carrier substrate 102 is a silicon carbide material layer, it may be honeycombed and porous with silicon carbide.
  • the ceramic heat dissipation structure is co-fired and integrally formed.
  • the bottom of the reflective structure 110 is bonded to the carrier substrate 102 by the adhesive 150.
  • the adhesive 150 has a certain height after curing, the side light emitted from the side of the light-emitting element 104 may have a part. It will enter the interface between the reflective structure 110 and the carrier substrate 102. Therefore, regardless of whether the adhesive is made of a transparent or opaque resin, the light entering the interface cannot be reflected by the reflective structure, and thus the luminous efficiency of the light-emitting column may be degraded.
  • a plurality of luminescent particles such as phosphors, are mixed in the adhesive 150 such as a transparent resin, so that the side light entering the interface between the reflective structure 110 and the carrier substrate 102 can re-energize the light in the adhesive.
  • the luminescence caused by the particles is re-entered into the illuminating column, thereby improving the luminous efficiency.
  • the conventional light-emitting module is mainly a package form in which a reflective cup surrounds a single wafer, and the reason why the plurality of wafers are not arranged is that each light-emitting is The sides of the wafer may each shield the side light emitted by the sides of the other light-emitting wafers, thereby detracting from the luminous efficiency.
  • the arrangement and the reflective structure of the light-emitting wafer disclosed in the embodiment can be applied to the light-emitting module described in the previous embodiment.
  • the light emitting module includes a plurality of light emitting columns 130a, 130b, and each of the light emitting columns is surrounded by a light reflecting structure 110.
  • a light reflecting structure 110 Taking the light-emitting column 130b as an example, it includes a plurality of light-emitting elements, such as a light-emitting chip.
  • 104a, 104b can be carried on the substrate 102.
  • the sidewall of the reflective structure 110 includes a reflective surface for reflecting the light L emitted by the luminescent wafer.
  • the light-emitting elements 104a, 104b each include at least one side 124a, 124b, and wherein the positive projection surface of any one of the side edges 124a of at least one of the light-emitting elements 104a and the adjacent light-emitting element 104b is substantially Not completely overlapping.
  • the area of overlap between the front projection surface of either side 124a of the at least one light-emitting element 104a and the adjacent light-emitting element 104b is substantially less than 50% of the front projection surface.
  • the light-emitting element may alternatively be formed of a polygonal light-emitting wafer, such as a quadrilateral or a hexagon, as required by the higher luminous efficiency, in addition to the at least one light-emitting element 104a.
  • the light L emitted by either side of each of the light-emitting wafers is substantially toward the sidewall of the light-reflecting structure.
  • each illuminating wafer includes a diagonal line extending from both ends Therefore, the illuminating wafers may be arranged in a line diagonally parallel to the sidewalls of the light reflecting structure 110, such as the diamond arrangement shown in FIG. 2B.
  • a shortest pitch p is also included between any two adjacent wafers 104a and 104b, for example, the distance between the ends of the two wafers, so that the distance of the shortest pitch p can be adjusted so that the projection surface A1 of the side surface of the wafer 104b and the wafer 104a
  • the overlapping areas of the side surfaces A2 do not completely overlap, for example, substantially zero or substantially less than 50% of the side surface area A1 of the wafer 104b.
  • the light emitted from the sides of the light-emitting chip can be effectively guided, and the light-reflecting surface is substantially directed toward the side wall of the light-reflecting structure without being blocked by other light-emitting chips, so that the light-emitting efficiency can be effectively improved.
  • the light-emitting module further includes a frame 310 fixed on the carrier substrate 102.
  • the frame 310 can be integrally formed with the light-reflecting structure 110 to frame the light-emitting columns 130a, 130b and the like.
  • the surface of the carrier substrate 102 on both sides includes a circuit area 300 for electrically connecting the light-emitting elements of each of the light-emitting columns to a power source.
  • the frame 310 may include an inner frame 310a to frame the light-emitting columns, and an outer frame 310b to frame the circuit area 300.
  • the carrier substrate can be thinned, such as forming a flat substrate 102, to facilitate mounting, and the volume of the light-emitting module can be effectively reduced.
  • the lens 500 covers the entire illuminating column and is fixed on the frame 310 including the reflective structure 110, wherein the lens 500 faces the projection surface of the carrier substrate 102' as a concentrating area. It may be a polygonal face, such as a rectangular or square face, each of which may emit a uniform circular light through the lens 500.
  • a circular or elliptical lens is first prepared, and then the four arc side edges 530 are cut away to leave a polygonal surface, such as a rectangular surface or a square surface.
  • Lens 510 In the case where the lens is too thin, a bottom light transmitting layer 550 may be attached to avoid lens breakage.
  • the projected area of the rectangular lens is about 2 to 2/3 of the area of the original circular or elliptical lens projection surface. Therefore, the rectangular lens structure can be reduced by about 3 points than the circular lens. 1 to 2/1 of the area, and the carrier substrate 102 can also add an additional surface on both sides to accommodate the circuit area. In other words, the size of the light-emitting module of the embodiment can be reduced, and the light-emitting columns are emitted. The light can still be focused by the combination of the reflective structure 110 and the rectangular lens structure 500 to output the mixed light source.
  • the lighting device such as the street lamp or the desk lamp shown in FIG. 7.
  • the lighting device includes a shell body 710 having an opening, and the supporting plate 720 is fixed at the opening of the lamp housing 710 to form a housing.
  • Space chamber, multiple light-emitting modules 600 can be detachable
  • the unloading fixture 730 is fixed to the outer surface of the support plate 720, such as by a screw-locking screw to the carrier substrate 102, and is fixed by a screw hole of the support plate 720.
  • the carrier substrate can be directly part of the housing body, for example using an alumina substrate to make an integrally formed lamp housing and the desired carrier substrate.
  • the illumination device of the embodiment uses a plurality of illumination modules 600, and each of the illumination modules further includes a plurality of illumination columns and their illumination elements, so the heat dissipation portion
  • the 800 is disposed in the accommodating space of the chamber of the entire lamp housing, and is shared by the heat dissipation modules. Therefore, for each of the illuminating elements, the heat dissipation area may include the entire heat dissipation portion 800, and the single illuminating is less likely to occur. The component is damaged due to insufficient heat dissipation.
  • the heat dissipation path of the light-emitting module mainly includes a carrier substrate 102, a support plate 720 which can serve as a heat dissipation plate, and a heat dissipation portion 800 attached to the inner surface of the support plate 720.
  • the heat dissipating portion 800 mainly includes one or more heat conducting tubes 810 and a heat dissipating block 820.
  • the heat conducting tube 810 is L-shaped in this example, so that one side thereof can be attached to the inner surface of the supporting plate 720, and the heat conducting tube 810 is another.
  • One side can pass through the heat dissipation block 820 to preferentially guide the heat of the light emitting module to the heat dissipation block 820, and the heat dissipation block 820 is also attached to the support plate 720 to disperse the heat on the support plate 720.
  • the heat dissipation path can continue to extend to an external mechanism outside the lamp housing.
  • a power-free cooling system can be added to the housing body or the receiving space to increase the heat dissipation effect.
  • a film vibration device such as a metal or alloy spring piece, is added to the accommodating space in the chamber, and the principle of thermal expansion and contraction caused by the temperature difference is used.
  • a wind or thermal (e.g., solar) driven fan may be disposed outside the lamp housing, so that the fan can be operated to cool the lamp housing by natural wind or heat.
  • the heat pipe 810 can increase the heat transfer efficiency, and includes a body having a vacuum sealed cavity, the body can be made of a heat dissipating metal such as copper or aluminum, and the vacuum tight cavity is Filled with a heat-conducting fluid, such as water, the wick is distributed on the inner wall of the closed cavity. Therefore, the heat-conducting fluid in the heat-conducting tube will evaporate near the heat source and flow to the ends of the body, and will be at the cold regions at both ends. Condensation and then the filament is pulled back to the location of the heat source by the capillary principle to continue the heat conduction.
  • the heat slug and the support plate are generally made of a metal having a good thermal conductivity, such as aluminum, copper or an alloy thereof.
  • the heat dissipation portion 800 further includes a honeycomb heat dissipation ceramic structure 830, for example, sintered from a silicon carbide material, which is attached to the heat dissipation block 820 and supported. On the board 720, better heat dissipation can be achieved.
  • a honeycomb heat dissipation ceramic structure 830 for example, sintered from a silicon carbide material, which is attached to the heat dissipation block 820 and supported.
  • On the board 720 better heat dissipation can be achieved.
  • an adhesive for fixing the heat dissipating parts of the heat dissipating portion attention must be paid to the heat dissipating effect of the adhesive so as not to hinder the heat dissipating path.
  • an atomic ash containing an unsaturated polyester resin component may be used as the adhesive. Agent.
  • the illumination module of the embodiment includes a plurality of illumination columns. Therefore, at least one of the illumination columns can emit a first light having a first color temperature, and at least one of the second illumination columns can emit a second color temperature.
  • the second light beam is then mixed with the first and second light rays through the lens to output a third light having a third color temperature.
  • the third color temperature value is between the first color temperature value and the second color temperature value.
  • the light having the different color temperatures can be arranged on the same carrier substrate 102, and the mixed light can be output through the reflective structure and the lens, so that the light can be integrated according to the overall light.
  • the color temperature requirement is used to set the color temperature of each light column.
  • the color temperature of the light of the current warm color is about 3300k or less
  • the color temperature of the light of the intermediate color is about 3300k - 6500k
  • the color temperature of the light of the cool color is about More than 6500k. Therefore, in this example, if the illumination of the warm white series is to be set, the low color temperature illumination column 130a may occupy a higher proportion than the high color temperature illumination column 130b.
  • FIG. 12 shows another embodiment of a light-emitting column having high and low color temperature
  • a white-emitting light-emitting column 132a covered with a layer of luminescent material may be selected, and then according to the color temperature.
  • the setting is mixed with a light-emitting column 132b containing no luminescent material layer such as red light (low color temperature) or blue light (high color temperature) to form a warm color light of a lower color temperature, or a cool color light of a higher color temperature.
  • This embodiment provides a method for manufacturing a light emitting module.
  • the manufacturing process includes the following steps, but the order of the steps can be adjusted according to the needs of the process without limitation.
  • a substrate 102 is provided, wherein at least one light-emitting wafer 104 is carried on the substrate 102, for example, an LED light-emitting element is fabricated on an aluminum substrate having a planarized aluminum oxide layer, as shown in FIG.
  • a reflective structure 110 is provided, for example, carried on a substrate 102 using a plastic reflective structure having a chrome-plated reflective surface to accommodate the luminescent wafer 104.
  • the retroreflective structure 110 can be integrated into a frame 310, as shown in Figure 4, which includes an inner frame 310a and an outer frame 310b.
  • the phosphor particles can be directly coated in the column space of the illuminating column by spraying; the other method is to mix a plurality of phosphor particles with a liquid without a binder to form a mixed liquid 900, and then, can be filled and mixed.
  • Liquid into the inner frame 310a of the reflective structure 110 for example using a dropping method, and then removing the liquid, for example, by using a drying process, the phosphor particles are agglomerated into a phosphor particle layer 106 by van der Waals force and attached to at least the above On the wafer 104 within the reflective structure 110.
  • the phosphor particles may be nanosized to be more uniformly mixed with the liquid without the binder to form a mixed solution.
  • the organic solvent 910 may be mixed into the liquid containing no binder to more uniformly mix the phosphor particles with the liquid without the binder to form a mixed solution.
  • the liquid and the organic solvent are removed to agglomerate the phosphor particles into a phosphor particle layer and adhere to at least the light-emitting wafer in the reflective structure.
  • the organic solvent is generally selected from paraffin or rosin oil, and finally, the organic solvent can be selected. Excessive high temperature procedures such as 320 degrees Celsius or less to remove organic solvents.
  • the reflective structure 110 used in accordance with an embodiment of the present invention can improve the general precipitation method. effectiveness. That is, only a small amount of the mixed liquid remains in the inner frame 310a, so that the remaining liquid can be removed more quickly by the drying method to form the phosphor particle layer 106 and adhere to the wafer in the reflective structure 110. This will increase process efficiency.
  • the embodiment may optionally embed a formed hard glass layer or an acryl resin layer in the reflective structure 110 to be pressed against the phosphor particle layer 106 as an inner cover layer.
  • Light-emitting module 100; carrier substrate: 102, 102'; light-emitting element: 104; luminescent material layer: 106; reflective structure: 110; inner cover: 108; lens: 200; illuminating column: 130; 160; heat conducting portion: 180; heat pipe: 112; groove 102a; heat sink: 114; heat sink fin: 115; patterned conductive layer: 170; contact pad: 170b; wire: 190; bearing portion: 170b; : 102a; Groove: 112a; Adhesive: 150; Luminous column: 130a, 130b, 132a, 132b; Light-emitting element: 104a, 104b; Light-emitting element side: 124a, 124b; Side light: L; Shortest pitch: p Projection surface: A1; Wafer side surface: A2; Frame: 310; Circuit area: 300; Inner frame: 310a; Outer frame: 310b; Lens structure: 500; Arc side: 530;

Abstract

L'invention concerne un module d'éclaraige comprenant une base de support (102) et une pluralité de lignes d'éclairage (103a, 103b) montées sur la base de support (102). Chaque ligne d'éclairage comprend une pluralité d'éléments d'éclairage (104a, 104b) et est entourée d'un réflecteur (110). Une lentille (500) est agencée sur les lignes d'éclairage, de sorte que les faisceaux issus des lignes d'éclairage sont modulés et forment une source de lumière. Chaque élément d'éclairage présente au moins un côté. Le plan faisant saillie vers l'avant de n'importe quel côté d'au moins un élément d'éclairage est superposé sur un élément d'éclairage adjacent de manière incomplète. Par conséquent, un faisceau issu d'un côté d'élément d'éclairage est conduit vers la paroi latérale du réflecteur, et ne peut pas être bloqué par d'autres éléments d'éclairage.
PCT/CN2007/001966 2006-10-08 2007-06-22 Système d'éclairage, module d'éclairage et procédé de fabrication de ces derniers WO2008043233A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
PCT/CN2007/001966 WO2008043233A1 (fr) 2006-10-08 2007-06-22 Système d'éclairage, module d'éclairage et procédé de fabrication de ces derniers
CA002658679A CA2658679A1 (fr) 2006-11-13 2007-08-24 Systeme d'emission de lumiere
PCT/CN2007/002570 WO2008058446A1 (fr) 2006-11-13 2007-08-24 Système d'émission de lumière
EP07800789A EP2085683A1 (fr) 2006-11-13 2007-08-24 Système d'émission de lumière
AU2007321634A AU2007321634A1 (en) 2006-11-13 2007-08-24 Light emitting system
TW096131464A TWI389595B (zh) 2006-11-13 2007-08-24 承載基板結構及其製造方法
CN2009100069595A CN101482230B (zh) 2006-11-13 2007-08-24 具有承载基板的结构的制造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
PCT/CN2006/002625 WO2007140660A1 (fr) 2006-06-08 2006-10-08 Système émetteur de lumière, dispositif émetteur de lumière et leur procédé de fabrication
CNPCT/CN2006/002625 2006-10-08
CNPCT/CN2006/003037 2006-11-13
PCT/CN2006/003037 WO2008043207A1 (fr) 2006-10-08 2006-11-13 Système électroluminescent, appareil électroluminescent et procédé de formation associé
PCT/CN2007/001966 WO2008043233A1 (fr) 2006-10-08 2007-06-22 Système d'éclairage, module d'éclairage et procédé de fabrication de ces derniers

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008058446A1 (fr) 2006-11-13 2008-05-22 Hong-Yuan Technology Co., Ltd. Système d'émission de lumière
CN113012559A (zh) * 2019-12-20 2021-06-22 台湾爱司帝科技股份有限公司 背光模块的制作方法

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Publication number Priority date Publication date Assignee Title
JP2004185972A (ja) * 2002-12-03 2004-07-02 Toshiba Lighting & Technology Corp 照明装置
CN1693960A (zh) * 2004-05-03 2005-11-09 三星电机株式会社 提供背光的发光二极管阵列组件及具有该组件的背光单元
CN1698202A (zh) * 2002-09-30 2005-11-16 奥斯兰姆奥普托半导体有限责任公司 用于产生一个成束光流的装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1698202A (zh) * 2002-09-30 2005-11-16 奥斯兰姆奥普托半导体有限责任公司 用于产生一个成束光流的装置
JP2004185972A (ja) * 2002-12-03 2004-07-02 Toshiba Lighting & Technology Corp 照明装置
CN1693960A (zh) * 2004-05-03 2005-11-09 三星电机株式会社 提供背光的发光二极管阵列组件及具有该组件的背光单元

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008058446A1 (fr) 2006-11-13 2008-05-22 Hong-Yuan Technology Co., Ltd. Système d'émission de lumière
CN113012559A (zh) * 2019-12-20 2021-06-22 台湾爱司帝科技股份有限公司 背光模块的制作方法

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