WO2008039067A2 - Method of manufacturing crystalline silicon solar cells with improved surface passivation - Google Patents
Method of manufacturing crystalline silicon solar cells with improved surface passivation Download PDFInfo
- Publication number
- WO2008039067A2 WO2008039067A2 PCT/NL2007/050459 NL2007050459W WO2008039067A2 WO 2008039067 A2 WO2008039067 A2 WO 2008039067A2 NL 2007050459 W NL2007050459 W NL 2007050459W WO 2008039067 A2 WO2008039067 A2 WO 2008039067A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- coating film
- oxide film
- dielectric coating
- solution containing
- crystalline silicon
- Prior art date
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000002161 passivation Methods 0.000 title abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000011248 coating agent Substances 0.000 claims abstract description 27
- 238000000576 coating method Methods 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 26
- 239000000126 substance Substances 0.000 claims abstract description 16
- 238000002791 soaking Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- -1 ammonium hydride Chemical compound 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 238000009835 boiling Methods 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001117 sulphuric acid Substances 0.000 claims description 2
- 235000011149 sulphuric acid Nutrition 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 57
- 239000010410 layer Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 241001091538 Dimorphandra Group A Species 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2007300831A AU2007300831A1 (en) | 2006-09-25 | 2007-09-20 | Method of manufacturing crystalline silicon solar cells with improved surface passivation |
KR1020097007845A KR101389546B1 (en) | 2006-09-25 | 2007-09-20 | Method of manufacturing crystalline silicon solar cells with improved surface passivation |
EP07834602A EP2070128B1 (en) | 2006-09-25 | 2007-09-20 | Method of manufacturing crystalline silicon solar cells with improved surface passivation |
DE602007011470T DE602007011470D1 (en) | 2006-09-25 | 2007-09-20 | PROCESS FOR PREPARING CRYSTALLINE SILICON SO |
MX2009003195A MX2009003195A (en) | 2006-09-25 | 2007-09-20 | Method of manufacturing crystalline silicon solar cells with improved surface passivation. |
JP2009530299A JP2010504651A (en) | 2006-09-25 | 2007-09-20 | Method for manufacturing crystalline silicon solar cell with improved surface passivation |
US12/442,935 US8709853B2 (en) | 2006-09-25 | 2007-09-20 | Method of manufacturing crystalline silicon solar cells with improved surface passivation |
CN2007800354818A CN101548395B (en) | 2006-09-25 | 2007-09-20 | Method of manufacturing crystalline silicon solar cells with improved surface passivation |
AT07834602T ATE492908T1 (en) | 2006-09-25 | 2007-09-20 | METHOD FOR PRODUCING CRYSTALLINE SILICON SOLAR CELLS WITH INCREASED SURFACE PASSIVATION |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL2000248A NL2000248C2 (en) | 2006-09-25 | 2006-09-25 | Process for the production of crystalline silicon solar cells with improved surface passivation. |
NL2000248 | 2006-09-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008039067A2 true WO2008039067A2 (en) | 2008-04-03 |
WO2008039067A3 WO2008039067A3 (en) | 2008-06-19 |
Family
ID=38006862
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/NL2007/050459 WO2008039067A2 (en) | 2006-09-25 | 2007-09-20 | Method of manufacturing crystalline silicon solar cells with improved surface passivation |
Country Status (15)
Country | Link |
---|---|
US (1) | US8709853B2 (en) |
EP (1) | EP2070128B1 (en) |
JP (1) | JP2010504651A (en) |
KR (1) | KR101389546B1 (en) |
CN (1) | CN101548395B (en) |
AT (1) | ATE492908T1 (en) |
AU (1) | AU2007300831A1 (en) |
DE (1) | DE602007011470D1 (en) |
ES (1) | ES2359531T3 (en) |
MX (1) | MX2009003195A (en) |
MY (1) | MY145709A (en) |
NL (1) | NL2000248C2 (en) |
PT (1) | PT2070128E (en) |
TW (1) | TWI459577B (en) |
WO (1) | WO2008039067A2 (en) |
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US7741225B2 (en) | 2007-05-07 | 2010-06-22 | Georgia Tech Research Corporation | Method for cleaning a solar cell surface opening made with a solar etch paste |
JP2011511453A (en) * | 2008-08-01 | 2011-04-07 | エルジー エレクトロニクス インコーポレイティド | Solar cell and manufacturing method thereof |
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US20110284068A1 (en) * | 2010-04-23 | 2011-11-24 | Solexel, Inc. | Passivation methods and apparatus for achieving ultra-low surface recombination velocities for high-efficiency solar cells |
WO2012103888A1 (en) | 2011-02-03 | 2012-08-09 | Rena Gmbh | Method for producing a crystalline silicon solar cell avoiding unwanted metal deposits |
US8298850B2 (en) | 2009-05-01 | 2012-10-30 | Silicor Materials Inc. | Bifacial solar cells with overlaid back grid surface |
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WO2015081927A1 (en) * | 2013-12-06 | 2015-06-11 | Helmholtz-Zentrum Für Materialien Und Energie Gmbh | Passivation layer having point contacts for thin-layer solar cells and method for production thereof |
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2006
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US7741225B2 (en) | 2007-05-07 | 2010-06-22 | Georgia Tech Research Corporation | Method for cleaning a solar cell surface opening made with a solar etch paste |
US7842596B2 (en) | 2007-05-07 | 2010-11-30 | Georgia Tech Research Corporation | Method for formation of high quality back contact with screen-printed local back surface field |
WO2010003784A2 (en) * | 2008-06-16 | 2010-01-14 | Institut Für Solarenergieforschung Gmbh | Silicon solar cell comprising a passivated p-type surface and method for producing the same |
WO2010003784A3 (en) * | 2008-06-16 | 2010-07-08 | Institut Für Solarenergieforschung Gmbh | Silicon solar cell comprising a passivated p-type surface and method for producing the same |
US8759140B2 (en) | 2008-08-01 | 2014-06-24 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
JP2011511453A (en) * | 2008-08-01 | 2011-04-07 | エルジー エレクトロニクス インコーポレイティド | Solar cell and manufacturing method thereof |
US8298850B2 (en) | 2009-05-01 | 2012-10-30 | Silicor Materials Inc. | Bifacial solar cells with overlaid back grid surface |
US8404970B2 (en) | 2009-05-01 | 2013-03-26 | Silicor Materials Inc. | Bifacial solar cells with back surface doping |
EP2337089A2 (en) | 2009-12-17 | 2011-06-22 | Rohm and Haas Electronic Materials LLC | Improved method of texturing semiconductor substrates |
TWI427695B (en) * | 2009-12-17 | 2014-02-21 | 羅門哈斯電子材料有限公司 | Improved method of texturing semiconductor substrates |
US20110284068A1 (en) * | 2010-04-23 | 2011-11-24 | Solexel, Inc. | Passivation methods and apparatus for achieving ultra-low surface recombination velocities for high-efficiency solar cells |
WO2012103888A1 (en) | 2011-02-03 | 2012-08-09 | Rena Gmbh | Method for producing a crystalline silicon solar cell avoiding unwanted metal deposits |
DE102011010306A1 (en) | 2011-02-03 | 2012-08-09 | Rena Gmbh | Process for producing a crystalline silicon solar cell while avoiding unwanted metal deposits |
TWI482294B (en) * | 2011-03-22 | 2015-04-21 | Nat Univ Tsing Hua | Method for fabricating silicon solar cells with back passivating layer and rear local contact and the device thereof |
WO2015081927A1 (en) * | 2013-12-06 | 2015-06-11 | Helmholtz-Zentrum Für Materialien Und Energie Gmbh | Passivation layer having point contacts for thin-layer solar cells and method for production thereof |
NL2012212C2 (en) * | 2014-02-06 | 2015-08-10 | Stichting Energie | Surface boron doped layer of crystalline silicon solar cell with improved surface passivation. |
Also Published As
Publication number | Publication date |
---|---|
TWI459577B (en) | 2014-11-01 |
US8709853B2 (en) | 2014-04-29 |
EP2070128A2 (en) | 2009-06-17 |
AU2007300831A1 (en) | 2008-04-03 |
ES2359531T3 (en) | 2011-05-24 |
MX2009003195A (en) | 2009-08-13 |
JP2010504651A (en) | 2010-02-12 |
CN101548395B (en) | 2011-04-06 |
PT2070128E (en) | 2011-04-01 |
TW200818535A (en) | 2008-04-16 |
WO2008039067A3 (en) | 2008-06-19 |
NL2000248C2 (en) | 2008-03-26 |
CN101548395A (en) | 2009-09-30 |
DE602007011470D1 (en) | 2011-02-03 |
US20100154883A1 (en) | 2010-06-24 |
KR101389546B1 (en) | 2014-04-28 |
ATE492908T1 (en) | 2011-01-15 |
MY145709A (en) | 2012-03-30 |
EP2070128B1 (en) | 2010-12-22 |
KR20090088860A (en) | 2009-08-20 |
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