WO2008028458A3 - Lithographieverfahren zur herstellung einer struktur - Google Patents

Lithographieverfahren zur herstellung einer struktur Download PDF

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Publication number
WO2008028458A3
WO2008028458A3 PCT/DE2007/001543 DE2007001543W WO2008028458A3 WO 2008028458 A3 WO2008028458 A3 WO 2008028458A3 DE 2007001543 W DE2007001543 W DE 2007001543W WO 2008028458 A3 WO2008028458 A3 WO 2008028458A3
Authority
WO
WIPO (PCT)
Prior art keywords
feature
producing
resist
positive resist
resists
Prior art date
Application number
PCT/DE2007/001543
Other languages
English (en)
French (fr)
Other versions
WO2008028458A2 (de
Inventor
Michel Marso
Juergen Moers
Original Assignee
Forschungszentrum Juelich Gmbh
Michel Marso
Juergen Moers
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich Gmbh, Michel Marso, Juergen Moers filed Critical Forschungszentrum Juelich Gmbh
Publication of WO2008028458A2 publication Critical patent/WO2008028458A2/de
Publication of WO2008028458A3 publication Critical patent/WO2008028458A3/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung einer Struktur durch Lithographie in einem auf einem Substrat übereinander angeordnetem Schichtsystem aus wenigstens zwei Lagen aus einem Negativlack und einem Positivlack. Das Verfahren umfasst die nachfolgenden Schritte: beide Lacke werden bestrahlt, derartig, dass ein größerer Bereich des Positivlacks als im Negativlack modifiziert wird, beide Lacke werden entwickelt, eine Struktur, deren Abmessungen durch den entfernten Bereich des Positivlacks abzüglich des modifizierten, nicht entfernten Bereichs des Negativlacks definiert sind, wird gebildet. Auf diese Weise ist es möglich, zu sehr eng benachbarten Strukturen im Schichtsystem zu gelangen.
PCT/DE2007/001543 2006-09-04 2007-08-29 Lithographieverfahren zur herstellung einer struktur WO2008028458A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006041774.7 2006-09-04
DE200610041774 DE102006041774A1 (de) 2006-09-04 2006-09-04 Lithographieverfahren zur Herstellung einer Struktur

Publications (2)

Publication Number Publication Date
WO2008028458A2 WO2008028458A2 (de) 2008-03-13
WO2008028458A3 true WO2008028458A3 (de) 2008-06-26

Family

ID=38829204

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2007/001543 WO2008028458A2 (de) 2006-09-04 2007-08-29 Lithographieverfahren zur herstellung einer struktur

Country Status (2)

Country Link
DE (1) DE102006041774A1 (de)
WO (1) WO2008028458A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2442030A (en) * 2006-09-19 2008-03-26 Innos Ltd Resist exposure and patterning process

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2543553A1 (de) * 1975-09-30 1977-03-31 Licentia Gmbh Verfahren zur herstellung einer aetzmaske
US5656414A (en) * 1993-04-23 1997-08-12 Fujitsu Limited Methods of forming tall, high-aspect ratio vias and trenches in photo-imageable materials, photoresist materials, and the like
US6110624A (en) * 1999-01-04 2000-08-29 International Business Machines Corporation Multiple polarity mask exposure method
US6255035B1 (en) * 1999-03-17 2001-07-03 Electron Vision Corporation Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices
EP1120688A1 (de) * 2000-01-28 2001-08-01 Tohoku University Schichtstruktur und Verfahren zu ihrer Herstelllung
US6492094B1 (en) * 2000-04-19 2002-12-10 Seagate Technology Llc Lithography for fast processing of large areas utilizing electron beam exposure
EP1489460A2 (de) * 2003-06-20 2004-12-22 Fuji Photo Film Co., Ltd. Lichtempfindlicher Bogen mit einer Unterlage sowie einer ersten und einer zweiten lichtempfindlichen Schicht
EP1519227A2 (de) * 2003-09-23 2005-03-30 INFM Istituto Nazionale per la Fisica della Materia Verfahren zur Herstellung komplexer dreidimensionaler Strukturen im Submikrometerbereich durch kombinierte Lithographie zweier Resists
US20060134559A1 (en) * 2004-12-21 2006-06-22 Ha Jeong H Method for forming patterns on a semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3027941A1 (de) * 1980-07-23 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von reliefstrukturen aus doppellackschichten fuer integrierte halbleiterschaltungen, wobei zur strukturierung hochenergetische strahlung verwendet wird
DE3377302D1 (en) * 1983-01-24 1988-08-11 American Telephone & Telegraph Bilevel ultraviolet resist system for patterning substrates of high reflectivity
EP0244572B1 (de) * 1986-04-24 1990-09-05 International Business Machines Corporation Zwei-Schichten-Photolack-Verfahren mit Deckschicht
CA2062479A1 (en) * 1991-03-20 1992-09-21 Mark Lelental Photoresist pattern-forming process suitable for integrated circuit production
US6465157B1 (en) * 2000-01-31 2002-10-15 Chartered Semiconductor Manufacturing Ltd Dual layer pattern formation method for dual damascene interconnect

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2543553A1 (de) * 1975-09-30 1977-03-31 Licentia Gmbh Verfahren zur herstellung einer aetzmaske
US5656414A (en) * 1993-04-23 1997-08-12 Fujitsu Limited Methods of forming tall, high-aspect ratio vias and trenches in photo-imageable materials, photoresist materials, and the like
US6110624A (en) * 1999-01-04 2000-08-29 International Business Machines Corporation Multiple polarity mask exposure method
US6255035B1 (en) * 1999-03-17 2001-07-03 Electron Vision Corporation Method of creating optimal photoresist structures used in the manufacture of metal T-gates for high-speed semiconductor devices
EP1120688A1 (de) * 2000-01-28 2001-08-01 Tohoku University Schichtstruktur und Verfahren zu ihrer Herstelllung
US6492094B1 (en) * 2000-04-19 2002-12-10 Seagate Technology Llc Lithography for fast processing of large areas utilizing electron beam exposure
EP1489460A2 (de) * 2003-06-20 2004-12-22 Fuji Photo Film Co., Ltd. Lichtempfindlicher Bogen mit einer Unterlage sowie einer ersten und einer zweiten lichtempfindlichen Schicht
EP1519227A2 (de) * 2003-09-23 2005-03-30 INFM Istituto Nazionale per la Fisica della Materia Verfahren zur Herstellung komplexer dreidimensionaler Strukturen im Submikrometerbereich durch kombinierte Lithographie zweier Resists
US20060134559A1 (en) * 2004-12-21 2006-06-22 Ha Jeong H Method for forming patterns on a semiconductor device

Also Published As

Publication number Publication date
WO2008028458A2 (de) 2008-03-13
DE102006041774A1 (de) 2008-03-20

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