WO2008018729A1 - Cleaning apparatus for cleaning mixing vaporizer - Google Patents

Cleaning apparatus for cleaning mixing vaporizer Download PDF

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Publication number
WO2008018729A1
WO2008018729A1 PCT/KR2007/003774 KR2007003774W WO2008018729A1 WO 2008018729 A1 WO2008018729 A1 WO 2008018729A1 KR 2007003774 W KR2007003774 W KR 2007003774W WO 2008018729 A1 WO2008018729 A1 WO 2008018729A1
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WO
WIPO (PCT)
Prior art keywords
cleaning
liquid
mixing
cleaning liquid
pipe
Prior art date
Application number
PCT/KR2007/003774
Other languages
French (fr)
Inventor
Dong Young Ryou
Original Assignee
Sts Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sts Co., Ltd. filed Critical Sts Co., Ltd.
Publication of WO2008018729A1 publication Critical patent/WO2008018729A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
    • B08B9/027—Cleaning the internal surfaces; Removal of blockages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material

Definitions

  • the present invention relates to a cleaning apparatus, and more particularly to a cleaning apparatus for cleaning a mixing vaporizer, that is used in a chemical vapor deposition (CVD) apparatus, which can remove material adhering to an inner part of the mixing vaporizer without disassembling the mixing vaporizer.
  • CVD chemical vapor deposition
  • the chemical vapor deposition (CVD) process is for depositing mixture of a gas state onto surface of a wafer that is provided in a chamber.
  • a mixing vaporizer (refer to 70 in FIG. 1) is used for supplying the mixture of a gas state into the chamber.
  • the mixing vaporizer 70 mixes a material liquid, that forms a thin film, with a conveying gas to vaporize the material liquid thus providing it to a reaction space of the chamber.
  • FIG. 1 is a sectional view that schematically shows a composition of the mixing vaporizer which is used for mixing and vaporizing the material liquid with the conveying gas in a thin film deposition process.
  • the mixing vaporizer 70 includes a vapor liquid mixing unit 30 and a vaporizing unit 60.
  • the vapor liquid mixing unit 30 which is for mixing the material liquid and the conveying gas includes a material liquid inflow opening 12 through which the material liquid flows in, a conveying gas inflow opening 14 through which the conveying gas flows in, and a mixing space 16 where the material liquid and the conveying gas are mixed together to generate a mixed gas.
  • Amount of the inflow of the material liquid and the conveying gas is regulated by regulating valves 12a and 14a.
  • a diaphragm 24 combined with a piezo valve 22 is provided in the mixing space 16.
  • the diaphragm 24 may control the flow in detail.
  • a uniform temperature may be maintained by a first heater 28 that is combined with the control unit (not shown) when the material liquid is mixed with the conveying gas.
  • the vaporizing unit 60 is for receiving the mixed gas from the vapor liquid mixing unit 30, vaporizing the mixed gas and providing it through a nozzle opening 50a into the chamber.
  • the vaporizing unit 60 includes a flow pipe 18 which communicates with the mixing space 16 of the vapor liquid mixing unit 30 to enable the inflow of the mixed gas, a second heater 48 which is connected with the control unit (not shown) to heat and vaporize the mixed gas that has flown in, and an injecting pipe 50 which provides the vaporized mixed gas to the reaction space of the chamber.
  • An housing 26 forms the material liquid inlet opening 12, the conveying gas inlet opening 14 and the mixing space 16, and is combined with the piezo valve 22.
  • the second heater 48, the flow pipe 18, the injecting pipe 50 and others known in the art that are included in the vaporizing unit 60 are installed within the case 46 or laid across the case 46.
  • the material liquid which includes silicon (Si) as its component such as tetraethyl orthosilicate (Si(OC 2 H 5 ) 4 , TEOS) is used in the mixing vaporizer 70 described above.
  • an adhering material including Si sticks onto an inner wall of the mixing vaporizer 70 as shown in FIG. 2.
  • the mixing vaporizer 70 is no longer used in the end because the conveying gas inlet opening 15 or the nozzle opening 50a is closed.
  • the mixing vaporizer 70 is disassembled to clean the part which the adhering material having Si sticks onto, then the mixing vaporizer 70 is assembled to be re-used, which causes inconvenience.
  • CVD chemical vapor deposition
  • the present invention provides a cleaning apparatus for cleaning a mixing vaporizer which comprises a vapor liquid mixing unit having a material liquid inlet opening where material liquid flows in, a conveying gas inlet opening where conveying gas flows in and a mixing space where the material liquid and the conveying gas are mixed to generate mixed gas, and a vaporizing unit which receives the mixed gas from the vapor liquid mixing unit to vaporize the mixed gas and inject the mixed gas through an injecting pipe
  • the cleaning apparatus comprising: a cleaning liquid tank which accommodates cleaning liquid; a circulating pump which is connected with the cleaning liquid tank; a first pipe which connects the cleaning liquid tank with the material liquid inlet opening of the vapor liquid mixing unit and provides the cleaning liquid to the mixing space of the vapor liquid mixing unit due to the circulating pump; and a second pipe which enables the cleaning liquid, that passes through the mixing space of the vapor liquid mixing unit and is provided to the vaporizing unit and discharged to the injecting pipe, to return to the cleaning liquid tank.
  • the cleaning apparatus further c omprises a third pipe which has one end part communicating with the first pipe and the other end part connected with the conveying gas inlet opening of the vapor liquid mixing unit.
  • the cleaning liquid comprises fluorine (F).
  • the cleaning liquid comprises at least one of Hydrofluoric Acid (HF), Ammonium Hydrogenfluride (NH HF ) and
  • the present invention provides a cleaning liquid for cleaning mixing vaporizer which comprises a vapor liquid mixing unit that mixes material liquid with conveying gas to generate mixed gas and a vaporizing unit that vaporizes and injects the mixed gas, the cleaning liquid comprising fluorine (F).
  • the cleaning liquid comprises at least one of Hydrofluoric Acid (HF), Ammonium Hydrogenfluride (NH HF ) and Tetrahydrofurane (THF).
  • HF Hydrofluoric Acid
  • NH HF Ammonium Hydrogenfluride
  • THF Tetrahydrofurane
  • a material adhering to an inner part of a mixing vaporizer used in a chemical vapor deposition (CVD) apparatus can be removed without disassembling the mixing vaporizer.
  • FIG. 1 is a sectional view schematically showing a composition of the mixing vaporizer.
  • FIG. 2 is a sectional view showing a state of the mixing vaporizer where material adhering thereon is present.
  • FIG. 3 is a configurational view showing a schematic structure of a combination of a cleaning apparatus according to an exemplary embodiment of the present invention and the mixing vaporizer of FIG 1. Best Mode for Carrying Out the Invention
  • FIG. 3 shows a schematic structure of a cleaning apparatus according to an exemplary embodiment of the present invention that is combined to a mixing vaporizer.
  • the cleaning apparatus includes a cleaning liquid tank 100, a circulating pump 200, a first pipe 310 and a second pipe 320.
  • a cleaning liquid 110 used in the cleaning apparatus according to the embodiment of the present invention includes fluorine (F) because material adhering to an inner wall of the mixing vaporizer 70 includes silicon (Si), so that it reacts with the fluorine (F) and can be removed and discharged from the inner wall of the mixing vaporizer 70.
  • the cleaning liquid 110 includes at least one of Hydrofluoric Acid (HF), Ammonium Hydrogenfluride (NH HF ) and Tetrahydrofurane (THF).
  • HF Hydrofluoric Acid
  • NH HF Ammonium Hydrogenfluride
  • THF Tetrahydrofurane
  • the cleaning liquid 110 used in this embodiment of the present invention is an aqueous solution where water and Ammonium Hydrogenfluride (NH HF ) are mixed according to the following weight ratio.
  • the cleaning liquid tank 100 accommodates the cleaning liquid 110. It is preferable but not necessary that the inner wall of the cleaning liquid tank 100 receives anti- corrosive treatment or is made of anticorrosive material so that it may not corrode when the cleaning liquid 110 is accommodated. Also, it is preferable but not necessary that the cleaning liquid tank 100 has its size enough to accommodate the cleaning liquid 110 that is required for cleaning the mixing vaporizer 70.
  • the circulating pump 200 circulates the cleaning liquid 110 accommodated in the cleaning liquid tank 100 into the mixing vaporizer 70.
  • the circulating pump 200 is combined to a predetermined part of the first pipe 310 which connects the cleaning liquid tank 100 with the material liquid inlet opening 12 of the vapor liquid mixing unit 30, so that it enables the cleaning liquid 110 accommodated within the cleaning liquid tank 100 to flow into the material liquid inlet opening 12 through the first pipe 310.
  • a third pipe 330 which has one end part formed to communicate with the first pipe 310 and the other end part connected with the conveying gas inlet opening 14 is further provided, so that the cleaning liquid 110 accommodated within the cleaning liquid tank 100 can flow into the mixing space 16 through each material liquid inlet opening 12 and conveying gas inlet opening 14.
  • the cleaning liquid 110 which has flown into the material liquid inlet opening 12 and the conveying gas inlet opening 14 passes through the mixing space 16, a flow pipe 18 and the nozzle opening 50a in order and is finally discharged to the injecting pipe 50. In this case, the cleaning liquid 110 returns to the cleaning liquid tank 100 through the second pipe 320 which connects the injecting pipe 50 with the cleaning liquid tank 100.
  • the second pipe 320 has a regulating valve
  • the cleaning liquid 110 accommodated within the cleaning liquid tank 100 flows into the material liquid inlet opening 12 of the vapor liquid mixing unit 30 through the first pipe 310 and flows into the conveying gas inlet opening 14 through the third pipe 330.
  • whether to permit the cleaning liquid 110 to flows in at the material liquid inlet opening 12 or at the conveying gas inlet opening 14 can be selectively chosen by using the regulating valve 12a of the material liquid inlet opening 12 and the regulating valve 14a of the conveying gas inlet opening 14.
  • the conveying gas inlet opening 14 passes through the mixing space 16, it removes the material adhering onto the inner wall from the material liquid inlet opening 12 to the mixing space 16, the material adhering onto the inner wall from the conveying gas inlet opening 14 to the mixing space 16 and the material adhering onto the inner wall of the mixing space 16.
  • the cleaning liquid 110 flows into the material liquid inlet opening 12 or the conveying gas inlet opening 14, passes through the mixing space 16, the flow pipe 18, the nozzle opening 50a and the injecting pipe 50 in order thus removing the material adhering onto the inner walls of the vapor liquid mixing unit 30 and the vaporizing unit 60, and returns to the cleaning liquid tank 100 through the second pipe 320.
  • the circulating amount of the cleaning liquid 110 can be controlled by the regulating valve 320a.

Abstract

The present invention relates to a cleaning apparatus for cleaning a mixing vaporizer and is characterized in that, as a cleaning apparatus for cleaning a mixing vaporizer which comprises a vapor liquid mixing unit having a material liquid inlet opening where material liquid flows in, a conveying gas inlet opening where conveying gas flows in and a mixing space where the material liquid and the conveying gas are mixed to generate mixed gas, and a vaporizing unit which receives the mixed gas from the vapor liquid mixing unit to vaporize the mixed gas and inject the mixed gas through an injecting pipe, the cleaning apparatus comprises a cleaning liquid tank which accommodates cleaning liquid; a circulating pump which is connected with the cleaning liquid tank; a first pipe which connects the cleaning liquid tank with the material liquid inlet opening of the vapor liquid mixing unit and provides the cleaning liquid to the mixing space of the vapor liquid mixing unit due to the circulating pump; and a second pipe which enables the cleaning liquid, that passes through the mixing space of the vapor liquid mixing unit and is provided to the vaporizing unit and discharged to the injecting pipe, to return to the cleaning liquid tank. According to the present invention having the above configuration, a material adhering to an inner part of a mixing vaporizer used in a chemical vapor deposition (CVD) apparatus can be removed without disassembling the mixing vaporizer.

Description

Description
CLEANING APPARATUS FOR CLEANING MIXING
VAPORIZER
Technical Field
[1] The present invention relates to a cleaning apparatus, and more particularly to a cleaning apparatus for cleaning a mixing vaporizer, that is used in a chemical vapor deposition (CVD) apparatus, which can remove material adhering to an inner part of the mixing vaporizer without disassembling the mixing vaporizer. Background Art
[2] Generally, most semiconductor processes for manufacturing semiconductor parts relate to chemical engineering and include a impurity injecting and diffusing process, a chemical vapor deposition process, a photolithography process, a cleaning process and other processes. Manufacture of a semiconductor is performed by repeatedly using such unit processes.
[3] Among the above processes, the chemical vapor deposition (CVD) process is for depositing mixture of a gas state onto surface of a wafer that is provided in a chamber. A mixing vaporizer (refer to 70 in FIG. 1) is used for supplying the mixture of a gas state into the chamber. The mixing vaporizer 70 mixes a material liquid, that forms a thin film, with a conveying gas to vaporize the material liquid thus providing it to a reaction space of the chamber.
[4] FIG. 1 is a sectional view that schematically shows a composition of the mixing vaporizer which is used for mixing and vaporizing the material liquid with the conveying gas in a thin film deposition process.
[5] As shown in FIG. 1, the mixing vaporizer 70 includes a vapor liquid mixing unit 30 and a vaporizing unit 60.
[6] The vapor liquid mixing unit 30 which is for mixing the material liquid and the conveying gas includes a material liquid inflow opening 12 through which the material liquid flows in, a conveying gas inflow opening 14 through which the conveying gas flows in, and a mixing space 16 where the material liquid and the conveying gas are mixed together to generate a mixed gas.
[7] Amount of the inflow of the material liquid and the conveying gas is regulated by regulating valves 12a and 14a. In general, as a flow of the material liquid per time unit is very small in the thin film deposition process, a diaphragm 24 combined with a piezo valve 22 is provided in the mixing space 16. By the operation of the piezo valve 22 using a control unit (not shown), the diaphragm 24 may control the flow in detail.
[8] Also, a uniform temperature may be maintained by a first heater 28 that is combined with the control unit (not shown) when the material liquid is mixed with the conveying gas. [9] The vaporizing unit 60 is for receiving the mixed gas from the vapor liquid mixing unit 30, vaporizing the mixed gas and providing it through a nozzle opening 50a into the chamber. [10] The vaporizing unit 60 includes a flow pipe 18 which communicates with the mixing space 16 of the vapor liquid mixing unit 30 to enable the inflow of the mixed gas, a second heater 48 which is connected with the control unit (not shown) to heat and vaporize the mixed gas that has flown in, and an injecting pipe 50 which provides the vaporized mixed gas to the reaction space of the chamber. [11] An housing 26 forms the material liquid inlet opening 12, the conveying gas inlet opening 14 and the mixing space 16, and is combined with the piezo valve 22. [12] The second heater 48, the flow pipe 18, the injecting pipe 50 and others known in the art that are included in the vaporizing unit 60 are installed within the case 46 or laid across the case 46. [13] The material liquid which includes silicon (Si) as its component such as tetraethyl orthosilicate (Si(OC 2 H 5 ) 4 , TEOS) is used in the mixing vaporizer 70 described above.
If the material liquid including Si is used for a long time, an adhering material including Si sticks onto an inner wall of the mixing vaporizer 70 as shown in FIG. 2.
[14] Accordingly, the mixing vaporizer 70 is no longer used in the end because the conveying gas inlet opening 15 or the nozzle opening 50a is closed.
[15] To solve such a problem, according to a conventional method, the mixing vaporizer
70 is disassembled to clean the part which the adhering material having Si sticks onto, then the mixing vaporizer 70 is assembled to be re-used, which causes inconvenience.
[16] Also, if the mixing vaporizer 70 is not accurately assembled after it is disassembled and cleaned, the diaphragm 24 is not properly operated for controlling the flow in de tail thus causing generation of particles and formation of films having abnormal quality.
Disclosure of Invention Technical Problem
[17] It is an object of the present invention to provide a cleaning apparatus for cleaning a mixing vaporizer used in a chemical vapor deposition (CVD) apparatus, which can remove material adhering to an inner part of the mixing vaporizer without disassembling the mixing vaporizer. Technical Solution
[18] To accomplish the above object, the present invention provides a cleaning apparatus for cleaning a mixing vaporizer which comprises a vapor liquid mixing unit having a material liquid inlet opening where material liquid flows in, a conveying gas inlet opening where conveying gas flows in and a mixing space where the material liquid and the conveying gas are mixed to generate mixed gas, and a vaporizing unit which receives the mixed gas from the vapor liquid mixing unit to vaporize the mixed gas and inject the mixed gas through an injecting pipe, the cleaning apparatus comprising: a cleaning liquid tank which accommodates cleaning liquid; a circulating pump which is connected with the cleaning liquid tank; a first pipe which connects the cleaning liquid tank with the material liquid inlet opening of the vapor liquid mixing unit and provides the cleaning liquid to the mixing space of the vapor liquid mixing unit due to the circulating pump; and a second pipe which enables the cleaning liquid, that passes through the mixing space of the vapor liquid mixing unit and is provided to the vaporizing unit and discharged to the injecting pipe, to return to the cleaning liquid tank.
[19] According to an aspect of the present invention, the cleaning apparatus further c omprises a third pipe which has one end part communicating with the first pipe and the other end part connected with the conveying gas inlet opening of the vapor liquid mixing unit.
[20] According to an aspect of the present invention, the cleaning liquid comprises fluorine (F).
[21] According to an aspect of the present invention, the cleaning liquid comprises at least one of Hydrofluoric Acid (HF), Ammonium Hydrogenfluride (NH HF ) and
4 2
Tetrahydrofurane (THF).
[22] Also, to accomplish the above object, the present invention provides a cleaning liquid for cleaning mixing vaporizer which comprises a vapor liquid mixing unit that mixes material liquid with conveying gas to generate mixed gas and a vaporizing unit that vaporizes and injects the mixed gas, the cleaning liquid comprising fluorine (F).
[23] According to an aspect of the present invention, the cleaning liquid comprises at least one of Hydrofluoric Acid (HF), Ammonium Hydrogenfluride (NH HF ) and Tetrahydrofurane (THF).
Advantageous Effects
[24] According to the present invention decribed above, a material adhering to an inner part of a mixing vaporizer used in a chemical vapor deposition (CVD) apparatus can be removed without disassembling the mixing vaporizer.
Brief Description of the Drawings [25] FIG. 1 is a sectional view schematically showing a composition of the mixing vaporizer. [26] FIG. 2 is a sectional view showing a state of the mixing vaporizer where material adhering thereon is present.
[27] FIG. 3 is a configurational view showing a schematic structure of a combination of a cleaning apparatus according to an exemplary embodiment of the present invention and the mixing vaporizer of FIG 1. Best Mode for Carrying Out the Invention
[28] FIG. 3 shows a schematic structure of a cleaning apparatus according to an exemplary embodiment of the present invention that is combined to a mixing vaporizer. The cleaning apparatus includes a cleaning liquid tank 100, a circulating pump 200, a first pipe 310 and a second pipe 320.
[29] A cleaning liquid 110 used in the cleaning apparatus according to the embodiment of the present invention includes fluorine (F) because material adhering to an inner wall of the mixing vaporizer 70 includes silicon (Si), so that it reacts with the fluorine (F) and can be removed and discharged from the inner wall of the mixing vaporizer 70.
[30] In this case, it is preferable but not necessary that the cleaning liquid 110 includes at least one of Hydrofluoric Acid (HF), Ammonium Hydrogenfluride (NH HF ) and Tetrahydrofurane (THF). The cleaning liquid 110 used in this embodiment of the present invention is an aqueous solution where water and Ammonium Hydrogenfluride (NH HF ) are mixed according to the following weight ratio.
[31] Water (H O) : Ammonium Hydrogenfluride (NH HF ) = 10 : 1
[32] The cleaning liquid tank 100 accommodates the cleaning liquid 110. It is preferable but not necessary that the inner wall of the cleaning liquid tank 100 receives anti- corrosive treatment or is made of anticorrosive material so that it may not corrode when the cleaning liquid 110 is accommodated. Also, it is preferable but not necessary that the cleaning liquid tank 100 has its size enough to accommodate the cleaning liquid 110 that is required for cleaning the mixing vaporizer 70.
[33] The circulating pump 200 circulates the cleaning liquid 110 accommodated in the cleaning liquid tank 100 into the mixing vaporizer 70. The circulating pump 200 is combined to a predetermined part of the first pipe 310 which connects the cleaning liquid tank 100 with the material liquid inlet opening 12 of the vapor liquid mixing unit 30, so that it enables the cleaning liquid 110 accommodated within the cleaning liquid tank 100 to flow into the material liquid inlet opening 12 through the first pipe 310.
[34] On the other hand, it is preferable but not necessary that a third pipe 330 which has one end part formed to communicate with the first pipe 310 and the other end part connected with the conveying gas inlet opening 14 is further provided, so that the cleaning liquid 110 accommodated within the cleaning liquid tank 100 can flow into the mixing space 16 through each material liquid inlet opening 12 and conveying gas inlet opening 14. [35] The cleaning liquid 110 which has flown into the material liquid inlet opening 12 and the conveying gas inlet opening 14 passes through the mixing space 16, a flow pipe 18 and the nozzle opening 50a in order and is finally discharged to the injecting pipe 50. In this case, the cleaning liquid 110 returns to the cleaning liquid tank 100 through the second pipe 320 which connects the injecting pipe 50 with the cleaning liquid tank 100.
[36] It is preferable but not necessary that the second pipe 320 has a regulating valve
320a which can regulate circulating amount of the cleaning liquid 110.
[37] Hereinafter, an operation of the cleaning apparatus according to the exemplary embodiment of the present invention is described with reference to FIG. 3.
[38] Firstly, by the circulating pump 200, the cleaning liquid 110 accommodated within the cleaning liquid tank 100 flows into the material liquid inlet opening 12 of the vapor liquid mixing unit 30 through the first pipe 310 and flows into the conveying gas inlet opening 14 through the third pipe 330.
[39] In this case, whether to permit the cleaning liquid 110 to flows in at the material liquid inlet opening 12 or at the conveying gas inlet opening 14 can be selectively chosen by using the regulating valve 12a of the material liquid inlet opening 12 and the regulating valve 14a of the conveying gas inlet opening 14.
[40] While the cleaning liquid 110 that has flown into the material liquid inlet opening
12 or the conveying gas inlet opening 14 passes through the mixing space 16, it removes the material adhering onto the inner wall from the material liquid inlet opening 12 to the mixing space 16, the material adhering onto the inner wall from the conveying gas inlet opening 14 to the mixing space 16 and the material adhering onto the inner wall of the mixing space 16.
[41] Secondly, while the cleaning liquid 110 that has flown into the vaporizing unit 60 through flow pipe 18 passes through the nozzle opening 50a and the injecting pipe 50, it removes the material adhering onto the inner wall from the mixing space 16 to the flow pipe 18, the nozzle opening 50a and the injecting pipe 50.
[42] As described above, the cleaning liquid 110 flows into the material liquid inlet opening 12 or the conveying gas inlet opening 14, passes through the mixing space 16, the flow pipe 18, the nozzle opening 50a and the injecting pipe 50 in order thus removing the material adhering onto the inner walls of the vapor liquid mixing unit 30 and the vaporizing unit 60, and returns to the cleaning liquid tank 100 through the second pipe 320.
[43] In this case, the circulating amount of the cleaning liquid 110 can be controlled by the regulating valve 320a.
[44] According the cleaning apparatus of the exemplary embodiment of the present invention as decribed above, if the weight ratio between the water (H O) and the Ammonium Hydrogenfluride (NH HF ) is water (H O): Ammonium Hydro- genfluride(NH HF )=10: 1 and the pressure of the cleaning liquid flowing through the
4 2 first, second and third pipes is set to 2.5kgf/cm , it takes about two days to completely clean the mixing vaporizer. [45] While the present invention has been particularly shown and described with reference to the exemplary embodiment thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.

Claims

Claims
[1] A cleaning apparatus for cleaning a mixing vaporizer which comprises a vapor liquid mixing unit having a material liquid inlet opening where material liquid flows in, a conveying gas inlet opening where conveying gas flows in and a mixing space where the material liquid and the conveying gas are mixed to generate mixed gas, and a vaporizing unit which receives the mixed gas from the vapor liquid mixing unit to vaporize the mixed gas and inject the mixed gas through an injecting pipe, the cleaning apparatus comprising: a cleaning liquid tank which accommodates cleaning liquid; a circulating pump which is connected with the cleaning liquid tank; a first pipe which connects the cleaning liquid tank with the material liquid inlet opening of the vapor liquid mixing unit and provides the cleaning liquid to the mixing space of the vapor liquid mixing unit due to the circulating pump; and a second pipe which enables the cleaning liquid, that passes through the mixing space of the vapor liquid mixing unit and is provided to the vaporizing unit and discharged to the injecting pipe, to return to the cleaning liquid tank.
[2] The cleaning apparatus according to claim 1, wherein the cleaning apparatus further comprises a third pipe which has one end part communicating with the first pipe and the other end part connected with the conveying gas inlet opening of the vapor liquid mixing unit.
[3] The cleaning apparatus according to claim 1, wherein the cleaning liquid comprises fluorine (F).
[4] The cleaning apparatus according to claim 1, wherein the cleaning liquid comprises at least one of Hydrofluoric Acid (HF), Ammonium Hydrogenfluride (NH HF ) and Tetrahydrofurane (THF).
[5] A cleaning liquid for cleaning mixing vaporizer which comprises a vapor liquid mixing unit that mixes material liquid with conveying gas to generate mixed gas and a vaporizing unit that vaporizes and injects the mixed gas, the cleaning liquid comprising fluorine (F).
[6] The cleaning liquid according to claim 5, wherein the cleaning liquid comprises at least one of Hydrofluoric Acid (HF), Ammonium Hydrogenfluride (NH HF ) and Tetrahydrofurane (THF).
PCT/KR2007/003774 2006-08-08 2007-08-06 Cleaning apparatus for cleaning mixing vaporizer WO2008018729A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0074773 2006-08-08
KR1020060074773A KR20080013352A (en) 2006-08-08 2006-08-08 Cleaning apparatus for cleaning mixing vaporizer

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Cited By (5)

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CN101780459A (en) * 2010-03-12 2010-07-21 西安热工研究院有限公司 Off-line filter-cell chemically-cleaning device
US20110094547A1 (en) * 2008-06-12 2011-04-28 Sts Co., Ltd. Cleaning device
CN102357497A (en) * 2011-07-19 2012-02-22 中国石油化工股份有限公司 Locking mechanism of tank positive-pressure cleaning equipment
WO2019201684A1 (en) * 2018-04-18 2019-10-24 Khs Corpoplast Gmbh Device for coating hollow articles, having at least one coating station, and method for cleaning a gas lance
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US20110094547A1 (en) * 2008-06-12 2011-04-28 Sts Co., Ltd. Cleaning device
US8769749B2 (en) * 2008-06-12 2014-07-08 Sts Co., Ltd. Cleaning device
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CN102357497A (en) * 2011-07-19 2012-02-22 中国石油化工股份有限公司 Locking mechanism of tank positive-pressure cleaning equipment
CN102357497B (en) * 2011-07-19 2013-07-24 中国石油化工股份有限公司 Locking mechanism of tank positive-pressure cleaning equipment
WO2019201684A1 (en) * 2018-04-18 2019-10-24 Khs Corpoplast Gmbh Device for coating hollow articles, having at least one coating station, and method for cleaning a gas lance
CN112041479A (en) * 2018-04-18 2020-12-04 科埃斯科波普拉斯特有限公司 Device for coating hollow bodies by means of at least one coating station and method for cleaning gas spray gun
WO2022217498A1 (en) * 2021-04-12 2022-10-20 台湾积体电路制造股份有限公司 Gas pipeline cleaning mechanism for chemical vapor deposition system

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