KR20080013352A - Cleaning apparatus for cleaning mixing vaporizer - Google Patents

Cleaning apparatus for cleaning mixing vaporizer Download PDF

Info

Publication number
KR20080013352A
KR20080013352A KR1020060074773A KR20060074773A KR20080013352A KR 20080013352 A KR20080013352 A KR 20080013352A KR 1020060074773 A KR1020060074773 A KR 1020060074773A KR 20060074773 A KR20060074773 A KR 20060074773A KR 20080013352 A KR20080013352 A KR 20080013352A
Authority
KR
South Korea
Prior art keywords
cleaning
liquid
mixing
gas
vaporizer
Prior art date
Application number
KR1020060074773A
Other languages
Korean (ko)
Inventor
류동영
Original Assignee
류동영
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 류동영 filed Critical 류동영
Priority to KR1020060074773A priority Critical patent/KR20080013352A/en
Priority to PCT/KR2007/003774 priority patent/WO2008018729A1/en
Publication of KR20080013352A publication Critical patent/KR20080013352A/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
    • B08B9/027—Cleaning the internal surfaces; Removal of blockages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material

Abstract

A cleaning apparatus for cleaning a mixing vaporizer is provided to eliminate attachment adhered to the inner wall of the mixing vaporizer without disassembling the mixing apparatus by circulating cleaning solution through first and second pipes and the mixing vaporizer. A cleaning apparatus for cleaning a mixing vaporizer comprises a cleaning solution tank(100), a circulation pump(200), a first pipe(310), a second pipe(320). Cleaning solution is stored in the cleaning solution tank. The circulation pipe is connected to the cleaning solution tank. The first pipe connects the cleaning solution tank with a raw material liquid inlet(12) of a gas-liquid mixing unit(30), and feeds cleaning solution liquid to a mixing space(16) of the gas-liquid mixing unit through the circulation pump. The second pipe returns the cleaning solution, which passed through the mixing space of the gas-liquid mixing unit, sent to a vaporization unit(60), and then exhausted to an injection pipe(50), to the cleaning solution tank.

Description

혼합기화기를 세정하기 위한 세정장치{Cleaning apparatus for cleaning mixing vaporizer}Cleaning apparatus for cleaning mixing vaporizer

도 1은 혼합기화기의 개략적인 구성을 나타내는 단면도.1 is a cross-sectional view showing a schematic configuration of a mixer vaporizer.

도 2는 혼합기화기에 고착물질이 고착된 상태를 나타내는 단면도.2 is a cross-sectional view showing a state in which a fixed substance is fixed to the mixer vaporizer.

도 3은 도 1의 혼합기화기에 본 발명의 실시예에 따른 세정장치가 결합된 개략적인 구성을 나타내는 구성도.3 is a block diagram showing a schematic configuration in which the cleaning apparatus according to the embodiment of the present invention is coupled to the mixer vaporizer of FIG.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

12:원료액유입구 14:반송가스유입구12: Raw material liquid inlet 14: Return gas inlet

15:반송가스유입공 16:혼합공간15: Return gas inlet hole 16: Mixed space

18:흐름관 22:피에조(piezo)밸브18: flow pipe 22: piezo valve

24:다이어프램(diaphragm) 26:하우징24: diaphragm 26: housing

28:제1히터 30:기액혼합부28: first heater 30: gas-liquid mixing unit

46:케이스 48:제2히터46: Case 48: Second heater

50:분사관 50a:노즐공50: spray pipe 50a: nozzle ball

60:기화부 70:혼합기화기(Mixing Vaporizer)60: vaporizer 70: Mixing Vaporizer

100:세정액탱크 110:세정액100: washing liquid tank 110: washing liquid

200:순환펌프 310:제1관200: circulating pump 310: the first tube

320:제2관 330:제3관320: building 2, building 330: building 3

12a, 14a, 320a:조절밸브12a, 14a, 320a: Control valve

본 발명은 세정장치에 관한 것으로서, 보다 상세하게는 CVD(chemical vapor deposition)장치에 사용되는 혼합기화기(Mixing Vaporizer)를 분해하지 않고, 내부에 고착된 고착물질을 제거할 수 있는 혼합기화기 세정용 세정장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning apparatus, and more particularly, to cleaning a mixed vaporizer that can remove a fixed substance fixed therein without disassembling a mixing vaporizer used in a chemical vapor deposition (CVD) apparatus. Relates to a device.

일반적으로, 반도체(半導體, semiconductor)부품을 제조하기 위한 반도체 공정은 본질상 대부분이 화학공학과 관련되어 있으며, 상세하게는 불순물 주입 및 확산공정, 산화공정, 화학기상증착공정, 사진식각공정, 세정공정 등으로 구성되고, 반도체의 제조는 이러한 단위공정들의 반복 사용을 통해 이루어진다.In general, semiconductor processes for manufacturing semiconductor components are mostly related to chemical engineering, and in detail, impurity implantation and diffusion processes, oxidation processes, chemical vapor deposition processes, photolithography processes, and cleaning processes. And the like, and the semiconductor is manufactured through repeated use of these unit processes.

상술한 공정 중 박막증착공정(chemical vapor deposition; CVD)은 챔버 내에 마련된 웨이퍼의 표면에 가스상태의 혼합물을 증착시키는 공정으로서, 챔버 내에 가스상태의 혼합물을 제공하기 위해서 혼합기화기(도 1의 70)가 사용되며, 이 혼합기화기(70)는 박막을 형성하기 위한 원료액을 반송가스와 혼합하여 기화시킨 후 챔버의 반응공간으로 제공하게 된다.Chemical vapor deposition (CVD) is a process of depositing a gaseous mixture on the surface of a wafer provided in a chamber, and provides a gaseous mixture in the chamber (70 in FIG. 1). Is used, and the mixed vaporizer 70 is mixed with the carrier gas to vaporize the raw material liquid for forming a thin film and then provided to the reaction space of the chamber.

도 1은 박막증착공정에서 원료액과 반송가스를 혼합하여 기화시키기 위한 혼 합기화기의 개략적인 구성을 나타내는 단면도로서, 도 1에 도시된 바와 같이, 혼합기화기(70)는 크게 기액혼합부(30)와 기화부(60)를 포함하여 구성된다.1 is a cross-sectional view showing a schematic configuration of a mixture vaporizer for vaporizing a mixture of the raw material liquid and the carrier gas in the thin film deposition process, as shown in Figure 1, the mixed vaporizer 70 is large gas-liquid mixing unit 30 ) And the vaporization unit 60 is configured.

기액혼합부(30)는 원료액과 반송가스를 혼합시키기 위한 부분으로서, 원료액이 유입되는 원료액유입구(12)와, 반송가스가 유입되는 반송가스유입구(14) 및 상기 원료액과 반송가스를 혼합하여 혼합가스를 생성하는 혼합공간(16)을 포함하여 이루어진다.The gas-liquid mixing unit 30 is a portion for mixing the raw material liquid and the conveying gas, the raw material liquid inlet 12 into which the raw material liquid flows, the conveying gas inlet 14 through which the conveying gas flows, and the raw material liquid and the conveying gas It comprises a mixing space 16 for generating a mixed gas by mixing.

한편, 원료액과 반송가스의 유입량은 조절밸브(12a, 14a)에 의해서 조절되는데, 통상의 박막증착공정에 있어서, 단위 시간당 원료액의 유량은 매우 적기 때문에, 상기 혼합공간(16)에는 피에조(piezo)밸브(22)와 결합된 다이어프램(24, diaphragm)이 마련되며, 제어부(미도시)에 의한 피에조밸브(22)의 동작에 의해서 다이어프램(24)이 유량을 미세하게 제어한다.On the other hand, the inflow amount of the feedstock liquid and the carrier gas is controlled by the control valves 12a and 14a. In a typical thin film deposition process, the flow rate of the feedstock liquid per unit time is very small, so that the mixing space 16 has a piezo ( A diaphragm 24 coupled with the valve 22 is provided, and the diaphragm 24 finely controls the flow rate by the operation of the piezo valve 22 by a controller (not shown).

또한, 제어부(미도시)와 연결된 제1히터(28)에 의해 원료액과 반송가스의 혼합 시 일정한 온도가 유지되도록 한다.In addition, the first heater 28 connected to the control unit (not shown) to maintain a constant temperature when mixing the raw material liquid and the carrier gas.

기화부(60)는 상술한 기액혼합부(30)로부터 혼합가스를 제공받아 기화시킨 후 노즐공(50a)을 통해서 챔버 내로 제공하기 위한 부분으로서, 상술한 기액혼합부(30)의 혼합공간(16)과 연통되어 혼합가스가 유입되도록 하는 흐름관(18)과, 제어부(미도시)와 연결되어 유입된 혼합가스를 가열하여 기화시키기 위한 제2히터(48) 및 기화된 혼합가스를 챔버의 반응공간으로 제공하기 위한 분사관(50)을 포함하여 이루어진다.The vaporization unit 60 is a portion for providing gas into the chamber through the nozzle hole 50a after receiving the gas mixture from the gas-liquid mixing unit 30 described above and vaporizing the gas mixture. 16 and a second heater 48 and a vaporized mixed gas which are connected to a control pipe (18) and connected to a controller (not shown) to heat and vaporize the mixed gas introduced therein. It comprises a spray pipe 50 for providing to the reaction space.

하우징(26)은 원료액유입구(12)와 반송가스유입구(14) 및 혼합공간(16)을 형 성하며, 피에조밸브(22)와 결합된다.The housing 26 forms a raw material liquid inlet 12, a carrier gas inlet 14, and a mixing space 16, and is coupled to the piezo valve 22.

케이스(46)의 내측 또는 내측에 걸쳐서, 기화부의 제2히터(48)와 흐름관(18) 및 분사관(50) 등이 설치된다.The second heater 48, the flow pipe 18, the injection pipe 50, and the like of the vaporization portion are provided over the inside or the inside of the case 46.

상술한 바와 같은 혼합기화기(70)에 사용되는 원료액으로는 테오스(Si(OC2H5)4,TEOS, Tetraethyl orthosilicate) 등과 같이 규소(Si) 성분이 포함된 원료액을 사용하는데, 규소(Si)가 포함된 원료액을 장시간 사용할 경우, 도 2에 도시된 바와 같이, 규소(Si)가 포함된 고착물질이 혼합기화기(70)의 내벽에 고착되는 현상이 발생된다.As the raw material liquid used in the mixed vaporizer 70 as described above is used a raw material liquid containing a silicon (Si) component, such as Teos (Si (OC 2 H 5 ) 4 , TEOS, Tetraethyl orthosilicate), silicon When the raw material solution containing (Si) is used for a long time, as shown in FIG. 2, a phenomenon in which a fixed material including silicon (Si) is fixed to the inner wall of the mixed vaporizer 70 is generated.

이로 인하여 결국에는 반송가스유입공(15) 또는 노즐공(50a)이 막혀서 사용할 수 없게 되는데, 이를 해결하기 위해서 종래에는 혼합기화기(70)를 분해시켜 규소(Si)가 포함된 고착물질이 고착된 부분을 세정한 후 조립하여 재사용을 해야 불편함이 있었다.As a result, the return gas inlet hole 15 or the nozzle hole 50a is blocked and cannot be used. In order to solve this problem, conventionally, a fixed substance including silicon (Si) is fixed by decomposing the mixed vaporizer 70. After washing the parts, assembly and reuse were inconvenient.

또한, 혼합기화기(70)를 분해시켜 세정한 후 정확하게 조립을 하지 못하면, 미세한 유량을 제어하기 위한 다이어프램(24)이 제대로 동작되지 못하게 되고, 이로 인하여 웨이퍼 표면에 혼합가스 증착 시, 파티클 발생 또는 이상 막질 형성을 유발하게 되는 문제점이 있었다.In addition, if disassembly and cleaning of the vaporizer 70 is not correctly assembled, the diaphragm 24 for controlling the fine flow rate is not properly operated, which causes particles or abnormalities during deposition of the mixed gas on the wafer surface There was a problem that causes the formation of the membrane.

본 발명은 상기와 같은 문제점을 감안하여 안출한 것으로서, CVD(chemical vapor deposition)장치에 사용되는 혼합기화기(Mixing Vaporizer)를 분해하지 않 고, 내부에 고착된 고착물질을 제거할 수 있는 혼합기화기를 세정하기 위한 세정장치를 제공하는 것을 그 목적으로 한다.The present invention has been made in view of the above problems, and does not decompose the mixing vaporizer (Mixing Vaporizer) used in the CVD (chemical vapor deposition) apparatus, the mixer vaporizer that can remove the fixed matter stuck inside It is an object to provide a cleaning device for cleaning.

상기와 같은 목적을 달성하기 위한 본 발명은 원료액이 유입되는 원료액유입구와, 반송가스가 유입되는 반송가스유입구 및 상기 원료액과 반송가스를 혼합하여 혼합가스를 생성하는 혼합공간을 포함하는 기액혼합부와; 상기 기액혼합부로부터 상기 혼합가스를 제공받아 기화시킨 후 분사관으로 분사하는 기화부;를 포함하여 구성된 혼합기화기(Mixing Vaporizer)를 세정하기 위한 세정장치에 있어서, 세정액이 수용되는 세정액탱크와; 상기 세정액탱크와 연결되는 순환펌프와; 상기 세정액탱크와 상기 기액혼합부의 원료액유입구를 연결하며, 상기 순환펌프에 의해 상기 세정액을 상기 기액혼합부의 혼합공간으로 제공하는 제1관 및; 상기 기액혼합부의 혼합공간을 통과하여 상기 기화부로 제공된 후 상기 분사관으로 배출되는 상기 세정액을 상기 세정액탱크로 복귀시키는 제2관을 포함하는 것을 특징으로 한다.The present invention for achieving the above object is a gas-liquid including a raw material liquid inlet through which the raw material liquid is introduced, a carrier gas inlet through which the carrier gas is introduced and a mixed space by mixing the raw material liquid and the carrier gas to generate a mixed gas A mixing section; A vaporizing unit for receiving the mixed gas from the gas-liquid mixing unit and vaporizing the gas, and then spraying the gas into the injection tube, comprising: a cleaning liquid tank containing a cleaning liquid; A circulation pump connected to the cleaning liquid tank; A first pipe connecting the cleaning liquid tank and the raw material liquid inlet of the gas-liquid mixing part and providing the cleaning liquid to the mixing space of the gas-liquid mixing part by the circulation pump; And a second pipe passing through the mixing space of the gas-liquid mixing part to the vaporization part and returning the cleaning liquid discharged to the cleaning tube to the cleaning liquid tank.

바람직하게, 일측이 상기 제1관과 연통되어 형성되고, 타측이 상기 기액혼합부의 반송가스유입구와 연결되는 제3관을 더 포함하여 구성된 것을 특징으로 한다.Preferably, one side is formed in communication with the first tube, the other side is characterized in that it further comprises a third pipe connected to the carrier gas inlet of the gas-liquid mixing portion.

바람직하게, 상기 세정액은 불소(F)를 포함하는 것을 특징으로 한다.Preferably, the cleaning solution is characterized in that it contains fluorine (F).

더욱 바람직하게, 상기 세정액은 불산(HF), 산성불화암모늄(NH4HF2), 테트라 하이드로 퓨란(THF) 중 적어도 어느 하나를 포함하는 것을 특징으로 한다.More preferably, the cleaning solution is characterized in that it comprises at least one of hydrofluoric acid (HF), acidic ammonium fluoride (NH 4 HF 2 ), tetra hydrofuran (THF).

한편, 상기 목적을 달성하기 위한 본 발명은 원료액과 반송가스를 혼합하여 혼합가스를 생성하는 기액혼합부와, 상기 혼합가스를 기화시켜 분사하는 기화부를 포함하는 혼합기화기(Mixing Vaporizer)를 세정하기 위한 세정액에 있어서, 불소(F)를 포함하는 것을 특징으로 한다.On the other hand, the present invention for achieving the above object is to clean a Mixing Vaporizer comprising a gas-liquid mixing unit for mixing the raw material liquid and the carrier gas to produce a mixed gas, and a vaporizing unit for vaporizing and spraying the mixed gas In the cleaning liquid for fluorine (F), it is characterized by the above-mentioned.

바람직하게, 상기 세정액은 불산(HF), 산성불화암모늄(NH4HF2), 테트라 하이드로 퓨란(THF) 중 적어도 어느 하나를 포함하는 것을 특징으로 한다.Preferably, the cleaning solution is characterized in that it comprises at least one of hydrofluoric acid (HF), acidic ammonium fluoride (NH 4 HF 2 ), tetrahydrofuran (THF).

이하, 첨부된 도면을 참조하여 본 발명에 따른 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 3은, 혼합기화기에 본 실시예의 세정장치가 결합된 개략적인 구성을 나타내는 구성도로서, 본 실시예의 세정장치는 크게 세정액탱크(100), 순환펌프(200), 제1관(310) 및 제2관(320)을 포함하여 이루어진다.3 is a block diagram showing a schematic configuration in which the cleaning device of the present embodiment is coupled to a mixer vaporizer, and the cleaning device of this embodiment includes a cleaning liquid tank 100, a circulation pump 200, a first pipe 310 and It comprises a second tube (320).

본 실시예의 세정장치에 사용되는 세정액(110)은 불소(F)를 포함하는데, 이는 혼합기화기(70)의 내벽에 고착된 규성(Si) 성분이 포함된 고착물질이 불소(F)와 반응하여, 혼합기화기(70)의 내벽으로부터 떨어져 배출되기 때문이다.The cleaning liquid 110 used in the cleaning apparatus of this embodiment includes fluorine (F), which is a fixing material containing silicic (Si) component fixed to the inner wall of the mixer vaporizer 70 reacts with the fluorine (F) This is because it is discharged away from the inner wall of the mixer vaporizer 70.

한편, 상기 세정액(110)은 불산(HF), 산성불화암모늄(NH4HF2), 테트라 하이드로 퓨란(THF) 중 적어도 어느 하나를 포함하는 것이 바람직하며, 본 실시예에 사용되는 세정액(110)은 물과 산성불화암모늄(NH4HF2)의 중량비를 아래와 같이 혼합한 수용액을 사용한다.Meanwhile, the cleaning solution 110 preferably includes at least one of hydrofluoric acid (HF), acidic ammonium fluoride (NH 4 HF 2 ), and tetrahydrofuran (THF), and the cleaning solution 110 used in the present embodiment. An aqueous solution in which the weight ratio of silver water to acidic ammonium fluoride (NH 4 HF 2 ) is mixed as follows.

물(H2O):산성불화암모늄(NH4HF2)=10:1Water (H 2 O): Acidic ammonium fluoride (NH 4 HF 2 ) = 10: 1

세정액탱크(100)는 세정액(110)이 수용되는 부분으로서, 세정액탱크(100)의 내측 벽면은 세정액(110) 수용 시 부식되지 않도록 부식방지처리가 되거나 부식이 방지되는 소재로 이루어지며, 세정액탱크(100)의 크기는 혼합기화기(70)를 세정하기 위한 세정액(110)을 충분히 수용할 수 있는 정도의 크기로 형성되는 것이 바람직하다.The cleaning liquid tank 100 is a portion in which the cleaning liquid 110 is accommodated. The inner wall surface of the cleaning liquid tank 100 is made of a material that is prevented from corrosion or prevents corrosion when the cleaning liquid 110 is accommodated. The size of the 100 is preferably formed to a size that can sufficiently accommodate the cleaning liquid 110 for cleaning the mixer vaporizer (70).

순환펌프(200)는 세정액탱크(100)에 수용된 세정액(110)을 혼합기화기(70)의 내부로 순환시키기 위한 부분으로서, 세정액탱크(100)와 기액혼합부(30)의 원료액유입구(12)를 연결하는 제1관(310)의 소정부분에 결합되어, 세정액탱크(100)에 수용된 세정액(110)이 제1관(310)을 통해서 원료액유입구(12)로 유입되도록 한다.The circulation pump 200 is a portion for circulating the cleaning liquid 110 contained in the cleaning liquid tank 100 into the mixed vaporizer 70, and the raw material liquid inlet 12 of the cleaning liquid tank 100 and the gas-liquid mixing part 30. ) Is coupled to a predetermined portion of the first pipe 310 to connect, so that the cleaning liquid 110 contained in the cleaning liquid tank 100 flows into the raw material liquid inlet 12 through the first pipe 310.

한편, 일측이 제1관(310)과 연통되어 형성되고, 타측이 기액혼합부(30)의 반송가스유입구(14)와 연결되는 제3관(330)이 더 구성되어, 세정액탱크(100)에 수용된 세정액(110)이 각각의 원료액유입구(12) 및 반송가스유입구(14)를 통해서 혼합공간(16)으로 유입되도록 하는 것이 바람직하다.On the other hand, one side is formed in communication with the first tube 310, the other side is further configured with a third pipe 330 connected to the carrier gas inlet 14 of the gas-liquid mixing unit 30, the cleaning liquid tank 100 It is preferable that the cleaning liquid 110 accommodated in the flow into the mixing space 16 through the respective raw material liquid inlet 12 and the carrier gas inlet 14.

원료액유입구(12) 및 반송가스유입구(14)로 유입된 세정액(110)은 혼합공간(16), 흐름관(18), 노즐공(50a)을 차례로 통과하여 최종적으로 분사관(50)으로 배출하게 되는데, 이때, 분사관(50)과 세정액탱크(100)를 연결하는 제2관(320)을 통해서 세정액(110)이 세정액탱크(100)로 복귀하게 된다.The washing liquid 110 introduced into the raw material liquid inlet 12 and the conveying gas inlet 14 passes through the mixing space 16, the flow tube 18, and the nozzle hole 50a in turn, and finally passes to the injection tube 50. At this time, the cleaning liquid 110 is returned to the cleaning liquid tank 100 through the second pipe 320 connecting the injection pipe 50 and the cleaning liquid tank 100.

한편, 상기 제2관(320)에는 세정액(110)의 순환량을 조절할 수 있도록, 조절밸브(320a)가 마련되는 것이 바람직하다.On the other hand, it is preferable that the control valve 320a is provided in the second pipe 320 so as to adjust the circulation amount of the cleaning liquid 110.

도 3을 참고로 하여 본 실시예의 작용을 설명하면 다음과 같다.Referring to Figure 3 describes the operation of the embodiment as follows.

먼저, 순환펌프(200)에 의해서 세정액탱크(100)에 수용된 세정액(110)이 제1 관(310)을 통해 기액혼합부(30)의 원료액유입구(12)로 유입되며, 제3관(330)을 통해 반송가스유입구(14)로 유입된다.First, the cleaning liquid 110 accommodated in the cleaning liquid tank 100 by the circulation pump 200 is introduced into the raw material liquid inlet 12 of the gas-liquid mixing unit 30 through the first pipe 310, and the third pipe ( It is introduced to the carrier gas inlet 14 through 330.

이때, 원료액유입구(12)의 조절밸브(12a)와 반송가스유입구(14)의 조절밸브(14a)를 사용하여, 원료액유입구(12) 또는 반송가스유입구(14)에서의 세정액(110) 유입 여부를 선택하여 사용할 수 있다.At this time, using the control valve 12a of the raw material liquid inlet 12 and the control valve 14a of the carrier gas inlet 14, the cleaning liquid 110 at the raw material liquid inlet 12 or the carrier gas inlet 14. It can be used to select whether it is inflow.

이와 같이, 원료액유입구(12) 또는 반송가스유입구(14)로 유입된 세정액(110)이 혼합공간(16)을 통과하면서, 원료유입구에서 혼합공간(16)까지의 내벽, 반송가스유입구(14)에서 혼합공간(16)까지의 내벽 및 혼합공간(16)의 내벽에 고착된 고착물질을 제거하게 된다.As such, while the cleaning liquid 110 introduced into the raw material liquid inlet 12 or the carrier gas inlet 14 passes through the mixing space 16, the inner wall from the raw material inlet to the mixing space 16 and the carrier gas inlet 14 ) And the fixing material fixed to the inner wall of the mixing space 16 and the inner wall of the mixing space 16.

다음으로, 흐름관(18)을 통해서 기화부(60)로 유입된 세정액(110)이 노즐공(50a) 및 분사관(50)을 통과하면서, 혼합공간(16)에서 흐름관(18), 노즐공(50a) 및 분사관(50)에 걸쳐서 내벽에 고착된 고착물질을 제거하게 된다.Next, while the cleaning liquid 110 introduced into the vaporization unit 60 through the flow pipe 18 passes through the nozzle hole 50a and the injection pipe 50, the flow pipe 18 in the mixing space 16, The fixed substance fixed to the inner wall is removed over the nozzle hole 50a and the injection pipe 50.

상술한 바와 같이, 세정액(110)이 원료액유입구(12) 또는 반송가스유입구(14)로 유입되어, 혼합공간(16), 흐름관(18), 노즐공(50a), 분사관(50)을 순차적으로 통과하면서 기액혼합부(30) 및 기화부(60)의 내벽에 고착된 고착물질을 제거한 후, 제2관(320)을 통해 세정액탱크(100)로 상기 세정액(110)이 복귀하게 된다.As described above, the washing liquid 110 flows into the raw material liquid inlet 12 or the carrier gas inlet 14, and the mixing space 16, the flow tube 18, the nozzle hole 50a, and the injection tube 50 are provided. After passing through the gas-liquid mixing unit 30 and the vaporized material to remove the fixed substance fixed to the inner wall of the 60, the cleaning liquid 110 to return to the cleaning liquid tank 100 through the second pipe 320 do.

이때, 조절밸브(320a)에 의해서 세정액(110)의 순환량을 조절할 수 있다.At this time, the circulating amount of the cleaning liquid 110 may be adjusted by the control valve 320a.

상술한 바와 같은 본 실시예에서, 물(H2O)과 산성불화암모늄(NH4HF2)의 중량비를, 물(H2O):산성불화암모늄(NH4HF2)=10:1로 하고, 제1관, 제2관, 제3관을 흐르는 세정액의 압력이 2.5㎏f/㎠ 가 되게 한 경우, 혼합기화기를 완전하게 세정하기까지 약 2일 정도의 시간이 소요된다.In this embodiment as described above, the weight ratio of water (H 2 O) and acidic ammonium fluoride (NH 4 HF 2 ) is set to water (H 2 O): acidic ammonium fluoride (NH 4 HF 2 ) = 10: 1. When the pressure of the cleaning liquid flowing through the first tube, the second tube and the third tube is 2.5 kgf / cm 2, it takes about two days to completely clean the mixed vaporizer.

이상 설명한 본 발명은 그 기술적 사상 또는 주요한 특징으로부터 벗어남이 없이 다른 여러 가지 형태로 실시될 수 있다. 따라서, 상기 실시예는 모든 점에서 단순한 예시에 지나지 않으며 한정적으로 해석되어서는 안 된다.The present invention described above can be embodied in many other forms without departing from the spirit or main features thereof. Therefore, the above embodiments are merely examples in all respects and should not be interpreted limitedly.

상기와 같이 구성된 본 발명에 의하면, CVD(chemical vapor deposition)장치에 사용되는 혼합기화기(Mixing Vaporizer)를 분해하지 않고, 내부에 고착된 고착물질을 제거할 수 있다.According to the present invention configured as described above, it is possible to remove the fixed substance fixed therein without disassembling the Mixing Vaporizer used in the CVD (chemical vapor deposition) apparatus.

Claims (6)

원료액이 유입되는 원료액유입구와, 반송가스가 유입되는 반송가스유입구 및 상기 원료액과 반송가스를 혼합하여 혼합가스를 생성하는 혼합공간을 포함하는 기액혼합부와; 상기 기액혼합부로부터 상기 혼합가스를 제공받아 기화시킨 후 분사관으로 분사하는 기화부;를 포함하여 구성된 혼합기화기(Mixing Vaporizer)를 세정하기 위한 세정장치에 있어서, A gas-liquid mixing unit including a raw material liquid inlet through which the raw material liquid flows, a carrier gas inlet through which the carrier gas flows, and a mixing space in which the raw material liquid and the carrier gas are mixed to generate a mixed gas; In the cleaning apparatus for cleaning a mixed vaporizer (Mixing Vaporizer) comprising a; vaporization unit for receiving the mixed gas from the gas-liquid mixing unit and vaporized and injected into the injection tube, 세정액이 수용되는 세정액탱크와; A cleaning liquid tank containing the cleaning liquid; 상기 세정액탱크와 연결되는 순환펌프와; A circulation pump connected to the cleaning liquid tank; 상기 세정액탱크와 상기 기액혼합부의 원료액유입구를 연결하며, 상기 순환펌프에 의해 상기 세정액을 상기 기액혼합부의 혼합공간으로 제공하는 제1관 및; A first pipe connecting the cleaning liquid tank and the raw material liquid inlet of the gas-liquid mixing part and providing the cleaning liquid to the mixing space of the gas-liquid mixing part by the circulation pump; 상기 기액혼합부의 혼합공간을 통과하여 상기 기화부로 제공된 후 상기 분사관으로 배출되는 상기 세정액을 상기 세정액탱크로 복귀시키는 제2관을 포함하는 것을 특징으로 하는 세정장치. And a second pipe passing through the mixing space of the gas-liquid mixing part to the vaporization part and returning the cleaning liquid discharged to the injection pipe to the cleaning liquid tank. 제1항에 있어서, The method of claim 1, 일측이 상기 제1관과 연통되어 형성되고, 타측이 상기 기액혼합부의 반송가스유입구와 연결되는 제3관을 더 포함하여 구성된 것을 특징으로 하는 세정장치. One side is formed in communication with the first tube, the other side is a cleaning device characterized in that it further comprises a third pipe connected to the carrier gas inlet of the gas-liquid mixing portion. 제1항에 있어서, The method of claim 1, 상기 세정액은 불소(F)를 포함하는 것을 특징으로 하는 세정장치.The cleaning apparatus, characterized in that the cleaning liquid contains fluorine (F). 제3항에 있어서, The method of claim 3, 상기 세정액은 불산(HF), 산성불화암모늄(NH4HF2), 테트라 하이드로 퓨란(THF) 중 적어도 어느 하나를 포함하는 것을 특징으로 하는 세정장치.The cleaning solution, characterized in that at least any one of hydrofluoric acid (HF), acidic ammonium fluoride (NH 4 HF 2 ), tetrahydrofuran (THF). 원료액과 반송가스를 혼합하여 혼합가스를 생성하는 기액혼합부와, 상기 혼합가스를 기화시켜 분사하는 기화부를 포함하는 혼합기화기(Mixing Vaporizer)를 세정하기 위한 세정액에 있어서, In the cleaning liquid for cleaning a mixed vaporizer (Mixing Vaporizer) comprising a gas-liquid mixing unit for mixing the raw material liquid and the carrier gas to produce a mixed gas, and a vaporization unit for vaporizing and spraying the mixed gas, 불소(F)를 포함하는 것을 특징으로 하는 세정액.A cleaning liquid containing fluorine (F). 제5항에 있어서, The method of claim 5, 상기 세정액은 불산(HF), 산성불화암모늄(NH4HF2), 테트라 하이드로 퓨란(THF) 중 적어도 어느 하나를 포함하는 것을 특징으로 하는 세정액.The cleaning liquid is at least one of hydrofluoric acid (HF), acidic ammonium fluoride (NH 4 HF 2 ), tetrahydrofuran (THF).
KR1020060074773A 2006-08-08 2006-08-08 Cleaning apparatus for cleaning mixing vaporizer KR20080013352A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020060074773A KR20080013352A (en) 2006-08-08 2006-08-08 Cleaning apparatus for cleaning mixing vaporizer
PCT/KR2007/003774 WO2008018729A1 (en) 2006-08-08 2007-08-06 Cleaning apparatus for cleaning mixing vaporizer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060074773A KR20080013352A (en) 2006-08-08 2006-08-08 Cleaning apparatus for cleaning mixing vaporizer

Publications (1)

Publication Number Publication Date
KR20080013352A true KR20080013352A (en) 2008-02-13

Family

ID=39033218

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060074773A KR20080013352A (en) 2006-08-08 2006-08-08 Cleaning apparatus for cleaning mixing vaporizer

Country Status (2)

Country Link
KR (1) KR20080013352A (en)
WO (1) WO2008018729A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009151303A2 (en) * 2008-06-12 2009-12-17 주식회사 에스티에스 Cleaning device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101780459B (en) * 2010-03-12 2011-10-26 西安热工研究院有限公司 Off-line filter-cell chemically-cleaning device
CN102357497B (en) * 2011-07-19 2013-07-24 中国石油化工股份有限公司 Locking mechanism of tank positive-pressure cleaning equipment
DE102018109217A1 (en) * 2018-04-18 2019-10-24 Khs Corpoplast Gmbh Apparatus for coating hollow bodies with at least one coating station
CN213378315U (en) * 2021-04-12 2021-06-08 台湾积体电路制造股份有限公司 Gas pipeline cleaning mechanism for chemical vapor deposition system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100209751B1 (en) * 1996-04-12 1999-07-15 구본준 Cleaning apparatus for semiconductor wafer
JP2003273030A (en) * 2002-03-18 2003-09-26 Watanabe Shoko:Kk Method of causing cvd thin film for deposition
KR20050099121A (en) * 2004-04-09 2005-10-13 주식회사 네패스 Cleaning composition for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009151303A2 (en) * 2008-06-12 2009-12-17 주식회사 에스티에스 Cleaning device
WO2009151303A3 (en) * 2008-06-12 2010-03-11 주식회사 에스티에스 Cleaning device
US8769749B2 (en) 2008-06-12 2014-07-08 Sts Co., Ltd. Cleaning device

Also Published As

Publication number Publication date
WO2008018729A1 (en) 2008-02-14

Similar Documents

Publication Publication Date Title
JP4553245B2 (en) Vaporizer, film forming apparatus and film forming method
CN1955338B (en) Vaporizer and semiconductor processing system
US6544345B1 (en) Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries
KR101076518B1 (en) Apparatus and methods for chemical vapor deposition
CN100490083C (en) Method of processing substrate and substrate processing apparatus
JP7021237B2 (en) Plasma mitigation technology using water vapor and oxygen reactants
US20090191109A1 (en) Exhaust structure of film-forming apparatus, film-forming apparatus, and method for processing exhaust gas
KR20080013352A (en) Cleaning apparatus for cleaning mixing vaporizer
US7784998B2 (en) Method for liquid mixing supply
CN102036742A (en) Gasification systems and methods for making bubble free solutions of gas in liquid
WO2012073574A1 (en) Method for removal of photoresist
CN104645779A (en) Gas Processing Apparatus
CN103316561B (en) Gas treatment equipment
JP2013064200A (en) Method and apparatus for vaporization of deposition material in substrate processing system
TW201825776A (en) Systems and methods for reducing effluent build-up in a pumping exhaust system
JP2015501380A (en) Integrated multi-head atomizer, vaporization system and vaporization method
US8769749B2 (en) Cleaning device
TW201627055A (en) Vacuum foreline reagent addition for fluorine abatement
TWI459489B (en) Solution preparation apparatus and method for treating individual semiconductor workpiece
KR100331024B1 (en) Liquid source injection vaporizer
JP2007327669A (en) Drying gas supply method, drying gas supply device, and substrate treatment device using the same
US20020160606A1 (en) Method for material removal from an in-process microelectronic substrate
KR100406175B1 (en) Apparatus for supplying a liquid raw materials and a method of forming a copper layer using the same
KR100841085B1 (en) A liquid supply apparatus
KR200480896Y1 (en) Precise temperature control for teos application by heat transfer fluid

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J201 Request for trial against refusal decision
AMND Amendment
B601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20080125

Effective date: 20080627