WO2008014196A3 - Inductively coupled plasma system with internal coil - Google Patents
Inductively coupled plasma system with internal coil Download PDFInfo
- Publication number
- WO2008014196A3 WO2008014196A3 PCT/US2007/074073 US2007074073W WO2008014196A3 WO 2008014196 A3 WO2008014196 A3 WO 2008014196A3 US 2007074073 W US2007074073 W US 2007074073W WO 2008014196 A3 WO2008014196 A3 WO 2008014196A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma system
- inductively coupled
- coupled plasma
- internal coil
- support
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Embodiments of the inventive technology may be a plasma system that comprises a coil powered by a power source so as to generate or enhance a plasma in a process chamber; and a dielectric form that itself is established within the process chamber and that defines an internal volume in which at least a portion of a coil is established. In various embodiments, the dielectric form has two ends supported by at least one support member at two support sites and/or has a form centerline in a system with a substrate support adapted to support a substrate with a process surface that defines a process surface plane that is parallel the form centerline.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/494,652 | 2006-07-26 | ||
US11/494,652 US20080023146A1 (en) | 2006-07-26 | 2006-07-26 | Inductively coupled plasma system with internal coil |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2008014196A2 WO2008014196A2 (en) | 2008-01-31 |
WO2008014196A3 true WO2008014196A3 (en) | 2008-05-02 |
Family
ID=38982232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2007/074073 WO2008014196A2 (en) | 2006-07-26 | 2007-07-23 | Inductively coupled plasma system with internal coil |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080023146A1 (en) |
TW (1) | TW200824507A (en) |
WO (1) | WO2008014196A2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200845833A (en) * | 2007-05-01 | 2008-11-16 | Delta Electronics Inc | Plasma generating device |
JPWO2009110226A1 (en) | 2008-03-05 | 2011-07-14 | 株式会社イー・エム・ディー | High frequency antenna unit and plasma processing apparatus |
JP5702143B2 (en) * | 2008-08-28 | 2015-04-15 | 株式会社イー・エム・ディー | Sputtering thin film forming equipment |
TW201105183A (en) * | 2009-07-21 | 2011-02-01 | Delta Electronics Inc | Plasma generating apparatus |
CN104080947B (en) * | 2012-01-27 | 2016-08-24 | 应用材料公司 | Sectional antenna assembly |
CN104103485B (en) * | 2013-04-15 | 2016-09-07 | 中微半导体设备(上海)有限公司 | Inductance coupled plasma device |
US10293830B2 (en) * | 2016-11-07 | 2019-05-21 | Honeywell International Inc. | Systems and methods for recognizing and analyzing emotional states of a vehicle operator |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6132566A (en) * | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
US20020157793A1 (en) * | 2000-05-25 | 2002-10-31 | Applied Materials, Inc. | Toroidal plasma source for plasma processing |
US20040007326A1 (en) * | 2002-07-12 | 2004-01-15 | Roche Gregory A. | Wafer probe for measuring plasma and surface characteristics in plasma processing enviroments |
US20050034811A1 (en) * | 2003-08-14 | 2005-02-17 | Mahoney Leonard J. | Sensor array for measuring plasma characteristics in plasma processing enviroments |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6103070A (en) * | 1997-05-14 | 2000-08-15 | Applied Materials, Inc. | Powered shield source for high density plasma |
US6136165A (en) * | 1997-11-26 | 2000-10-24 | Cvc Products, Inc. | Apparatus for inductively-coupled-plasma-enhanced ionized physical-vapor deposition |
US6217718B1 (en) * | 1999-02-17 | 2001-04-17 | Applied Materials, Inc. | Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma |
US6237526B1 (en) * | 1999-03-26 | 2001-05-29 | Tokyo Electron Limited | Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma |
JP2004055600A (en) * | 2002-07-16 | 2004-02-19 | Tokyo Electron Ltd | Plasma processing apparatus |
-
2006
- 2006-07-26 US US11/494,652 patent/US20080023146A1/en not_active Abandoned
-
2007
- 2007-07-23 WO PCT/US2007/074073 patent/WO2008014196A2/en active Application Filing
- 2007-07-24 TW TW096126896A patent/TW200824507A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6132566A (en) * | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
US20020157793A1 (en) * | 2000-05-25 | 2002-10-31 | Applied Materials, Inc. | Toroidal plasma source for plasma processing |
US20040007326A1 (en) * | 2002-07-12 | 2004-01-15 | Roche Gregory A. | Wafer probe for measuring plasma and surface characteristics in plasma processing enviroments |
US20050034811A1 (en) * | 2003-08-14 | 2005-02-17 | Mahoney Leonard J. | Sensor array for measuring plasma characteristics in plasma processing enviroments |
Also Published As
Publication number | Publication date |
---|---|
US20080023146A1 (en) | 2008-01-31 |
TW200824507A (en) | 2008-06-01 |
WO2008014196A2 (en) | 2008-01-31 |
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