WO2008012898A1 - Appareil d'amplification de puissance - Google Patents

Appareil d'amplification de puissance Download PDF

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Publication number
WO2008012898A1
WO2008012898A1 PCT/JP2006/314899 JP2006314899W WO2008012898A1 WO 2008012898 A1 WO2008012898 A1 WO 2008012898A1 JP 2006314899 W JP2006314899 W JP 2006314899W WO 2008012898 A1 WO2008012898 A1 WO 2008012898A1
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WO
WIPO (PCT)
Prior art keywords
amplifier
power
bias
value
peak amplifier
Prior art date
Application number
PCT/JP2006/314899
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English (en)
Japanese (ja)
Inventor
Shinji Ueda
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to PCT/JP2006/314899 priority Critical patent/WO2008012898A1/fr
Publication of WO2008012898A1 publication Critical patent/WO2008012898A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/04—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers
    • H03F1/06—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in discharge-tube amplifiers to raise the efficiency of amplifying modulated radio frequency waves; to raise the efficiency of amplifiers acting also as modulators
    • H03F1/07—Doherty-type amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only

Definitions

  • the present invention relates to a power amplifying apparatus that can be mounted on a multi-carrier portable terminal that transmits and receives multi-carrier signals.
  • a Doherty amplifier is known as a power amplifying apparatus that can amplify even a multicarrier signal having such a high peak power with high efficiency (for example, see Non-Patent Document 1).
  • FIG. 1 is a schematic configuration diagram of a commonly known Dono / Tee amplifier.
  • the Doherty amplifier consists of a splitter 1 that distributes the input RF signal, a carrier amplifier 2, a peak amplifier 3, and a first ⁇ ⁇ 4 transmission line 4 that performs a phase delay of 90 °.
  • the second ⁇ 4 transmission line 5 and the third ⁇ 4 transmission line 6 are used.
  • the load impedance of the carrier amplifier 2 is modulated by the output current of the peak amplifier 3 by the action of the phase delay of 90 ° by the first ⁇ ⁇ 4 transmission line 4 and the second ⁇ ⁇ 4 transmission line 5. .
  • the carrier amplifier 2 in a region where the input power is low, only the carrier amplifier 2 operates in a state where the load impedance is high and operates at a high efficiency, and in a region where the input power is high. Since the load impedance of the carrier amplifier 2 is lowered by the output current of the peak amplifier 3 and the saturation power is raised while maintaining high efficiency, even a signal having high peak power can be amplified with high efficiency. That is, it is possible to perform high-efficiency amplification even in a region where the input power is low even in a region where the input power is high.
  • the carrier amplifier 2 operates with a high load impedance. However, there is a problem that distortion characteristics deteriorate.
  • FIG. 2 is a circuit diagram showing a configuration summarizing the power amplifying device disclosed in Patent Document 1.
  • the circuit configuration of the power amplifier shown in Fig. 2 controls the bias of the first bias control network 7 and the peak amplifier 3 to control the bias of the carrier amplifier 2 in addition to the configuration of the Dono and Tee amplifiers in Fig. 1.
  • the second bias control network 8 is configured.
  • FIG. 3 is a characteristic diagram showing the relationship between output power and efficiency in the power amplifying apparatus shown in FIG. 2, with the horizontal axis representing power and the vertical axis representing efficiency. That is, in the circuit configuration shown in FIG. 2, when the output power of the power amplifying device (that is, the output power of the third ⁇ 4 transmission line 6) is low and the low power mode, the power amplifying device operates as a Doherty amplifier.
  • the second bias control network 8 is controlled so that the power amplifier operates as a balance amplifier (that is, a class amplifier) in the high power mode where the output power of the power amplifier is high. 8 is controlling.
  • the second bias control network 8 controls the peak amplifier 3 to be turned off so that the power amplifier operates as a Doherty amplifier.
  • the bias of the peak amplifier 3 is controlled by the second bias control network 8 so that the power amplifying device operates as a balance amplifier (class AB amplifier).
  • the second bias control network 8 switches the peak amplifier 3 to OFF and ON according to the magnitude of the output power, which is the low power mode or the high power mode.
  • the characteristics as a Doherty amplifier and the characteristics as a class AB amplifier are switched.
  • the second bias control network 8 is connected to the peak amplifier 3. Is turned on (that is, in the high power mode region), increasing the noise and operating as a balance amplifier (Class AB amplifier).
  • the Dono and Tee amplifier characteristics (a) in the region of low output power and low power mode are shown in FIG. As high as In the high power mode region where the output power is high, the efficiency is reduced, but the distortion characteristics are low distortion as in the balanced amplifier characteristics (Class AB amplifier characteristics) (b).
  • Class AB amplifier characteristics Class AB amplifier characteristics
  • the power amplifying device shown in FIG. 2 functions as a balance amplifier (class AB amplifier) in the high power mode region, high-efficiency characteristics cannot be obtained in order to prioritize distortion characteristics.
  • the distortion is low in the high power mode region, the efficiency is lower than that of the Doherty amplifier characteristics (a).
  • FIG. 4 is a circuit diagram showing a configuration summarizing the power amplifying device disclosed in Patent Document 2.
  • a power bra 9 for extracting a signal so as not to reduce the gain of the input RF signal 9 The configuration includes a detector 10 for detecting input power, a first bias control unit 11, and a second bias control unit 12.
  • the active bias is such that the biases of the first bias control unit 11 and the second bias control unit 12 change substantially proportionally as the input power detected by the detector 10 increases.
  • the first bias controller 11 reduces the bias of the carrier amplifier 2 and the second bias. Since the control unit 12 increases the bias of the peak amplifier 3, as shown in the characteristic (c) of Patent Document 2 of the alternate long and short dash line in FIG.
  • the efficiency is low, in the high power mode it is more efficient than the class AB amplifier characteristics (b). In this way, low distortion characteristics can be maintained while maintaining a relatively high efficiency in the range of the low power mode and the high power mode.
  • Patent Document 1 Japanese Unexamined Patent Application Publication No. 2004-173231
  • Patent Document 2 Special Table 2000-513535
  • the detector 10 for detecting the input power the first bias control unit 11 and the second noisy control unit 12. Since the circuit scale becomes large due to the complexity of the configuration and the increase in the number of adjustment points of the analog circuit, such a power amplifier is not available for portable terminals intended for miniaturization. It becomes extremely difficult to implement.
  • the modulation scheme of the multi-carrier signal to be transmitted changes, so that when the peak factor of the multi-carrier signal becomes large, the balance amplifier (AB Even if it operates as a class amplifier), the low distortion characteristics cannot be maintained, and as a result, there is a problem that the distortion in the power amplifying device deteriorates.
  • the peak factor of a multicarrier signal changes, such as switching between R99 and Rel5 in WCDMA (Wideband Code Division Multiple Access) or switching between QPSK (Quadri Phase Shift Keying) and 16QAM (16 Quadrature Amplitude Modulation).
  • An object of the present invention is to provide a high-efficiency and low-distortion power amplifying apparatus that can be applied to a mobile terminal, particularly a multi-carrier mobile terminal.
  • a power amplifying apparatus of the present invention is a power amplifying apparatus that branches an input signal and performs power amplification by a Doherty amplification function using a carrier amplifier and a peak amplifier.
  • the bias voltage control means for controlling the bias voltage or the bias current of the peak amplifier is used. According to such a configuration, the optimum bias voltage corresponding to the output power without using a complicated circuit is increased in peak. Since it can be applied to the width device, a low distortion and high efficiency power amplifier can be easily realized.
  • the balance amplifier (AB) is set by setting the noise value of the peak amplifier so that the distortion characteristic falls below a predetermined threshold.
  • Class amplification This makes it possible to use the TPC setting value of the variable gain amplifier that allows the mobile terminal to perform transmission power control over a high dynamic range, thereby improving efficiency and reducing distortion without adding a complicated circuit. Can be realized.
  • the relationship between the TPC set value and the bias value of the peak amplifier whose distortion characteristic falls below a predetermined threshold is set by the TPC set value.
  • the ACLR characteristics are set to the minimum bias value that is less than the standard value. Therefore, the distortion characteristics can be satisfied and the high-efficiency operation of the Doherty amplifier can be maintained.
  • the power amplifying device of the present invention when the TPC set value is the maximum value, the noise value of the peak amplifier is made equal to or less than the bias value of the carrier amplifier. . Therefore, at the time of maximum output, both the peak amplifier and the carrier amplifier have a configuration close to a balance amplifier as a class AB amplifier, so that the maximum output power can be achieved with low distortion while maintaining a state close to saturation power. In addition, highly efficient operation can be realized. Therefore, the power amplifying apparatus of the present invention can be applied to a portable terminal that can transmit a radio signal with high efficiency and low distortion.
  • FIG. 1 Schematic configuration diagram of commonly known Dono and Tee amplifiers
  • FIG. 2 is a circuit diagram showing a configuration summarizing the power amplifying device disclosed in Patent Document 1.
  • FIG. 3 Characteristic diagram showing the relationship between output power and efficiency in the power amplifying device shown in FIG. 2 ⁇ 4] Circuit diagram showing a configuration summarizing the power amplifying device disclosed in Patent Document 2
  • FIG. 5 is a configuration diagram of a power amplification device applied to Embodiment 1 of the present invention.
  • FIG. 6 is a diagram showing an example of a table stored in the bias value table shown in FIG.
  • FIG. 7 is a characteristic diagram showing the relationship between output power and distortion in the power amplifying apparatus shown in FIG.
  • FIG. 8 is a characteristic diagram showing the relationship between output power and efficiency in the power amplifying apparatus shown in FIG.
  • FIG. 9 is a circuit diagram showing the configuration of the carrier amplifier shown in FIG.
  • FIG. 10 is a circuit diagram showing the configuration of the peak amplifier shown in FIG.
  • FIG. 11 is a configuration diagram of a power amplifying device applied to Embodiment 2 of the present invention.
  • FIG. 12 is a configuration diagram of a power amplifying device applied to Embodiment 3 of the present invention.
  • FIG. 13 is a configuration diagram of a power amplifying device applied to Embodiment 4 of the present invention.
  • the power amplifying apparatus of the present invention obtains a noise value of a peak amplifier that maximizes efficiency while satisfying a desired low distortion condition in advance, and uses the transmission power control set value (TPC set value) to determine the peak amplifier.
  • the bias value is switched. That is, the bias value of the peak amplifier is controlled according to the TPC setting value.
  • the optimum bias value for the peak amplifier can be set according to the output power without using a complicated circuit, so that it can be applied over a wide power range from the low power mode to the high power mode. Therefore, high efficiency and low distortion can be realized.
  • the power amplifying apparatus of the present invention switches the bias value of the peak amplifier using a modulation mode such as a modulation scheme and the number of code multiplexes and a TPC setting value.
  • a modulation mode such as a modulation scheme and the number of code multiplexes and a TPC setting value.
  • a temperature detection unit is provided, and the temperature information detected by the temperature detection unit and the bias value of the TPC set value force peak amplifier are switched. As a result, even when the operating temperature of the power amplification device fluctuates, it is possible to achieve low distortion characteristics while maintaining high efficiency characteristics.
  • FIG. 5 is a configuration diagram of a power amplifying device applied to Embodiment 1 of the present invention.
  • This power amplifying device includes a modulation unit 1 01, frequency converter 102, variable gain amplifier 103, splitter 104, carrier amplifier 105, peak amplifier 106, first ⁇ 4 transmission line 107, second ⁇ 4 transmission line 108, third ⁇ 4 transmission line 109, A transmission power setting unit 110, a delay adjustment unit 111, a bias value table 112, and a bias setting unit (bias voltage control means) 113 are included.
  • the delay adjustment unit 111, the bias value table 112, and the bias setting unit 113 are components added according to the present invention, and other components are the conventional dono and tee amplification. Since these are the components of the power amplifying device realized by the device, description of those components will be made to the minimum necessary.
  • Modulation section 101 has a function for modulating the input baseband signal.
  • the frequency conversion unit 102 has a function of performing RFZIF conversion on the modulated baseband signal.
  • the variable gain amplifier 103 has a function of pre-amplifying the RF signal or IF signal before the Doherty amplifier.
  • the splitter 104 has a function of branching the RF signal or IF signal input to the Doherty amplifier.
  • the configuration subsequent to the splitter 104 is a configuration that realizes the Doherty amplification function, and the carrier amplifier 105 has a low input power and is highly efficient because it operates in a region with a high load impedance. It has a function to operate.
  • the peak amplifier 106 is a signal having a high peak power by raising the saturation power while maintaining high efficiency because the load impedance viewed from the carrier amplifier 105 is lowered by the output current of the peak amplifier 106 in a region where the input power is high. Even if it exists, it has a function to perform highly efficient amplification.
  • the first ⁇ ⁇ 4 transmission line 107, the second ⁇ ⁇ 4 transmission line 108, and the third ⁇ ⁇ 4 transmission line 109 are transmission lines for delaying the phase of the input RF signal by 90 °.
  • Transmission power setting section 110 has a function of switching the bias values of variable gain amplifier 103 and peak amplifier 106 and setting TPC setting values for controlling the gains of these amplifiers to desired values.
  • the delay adjustment unit 111 has a function of adjusting the delay of the signal from the variable gain amplifier 103 to the peak amplifier 106. More specifically, the delay adjustment unit 111 includes a variable gain amplifier 103 ⁇ splitter 104 ⁇ second ⁇ 4 transmission line 108. ⁇ A function of absorbing the delay difference between the delay of the signal up to the peak amplifier 106 and the delay of the signal of the bias circuit from the bias value table 112 ⁇ the bias setting unit 113 ⁇ the peak amplifier 106.
  • the bias value table 112 stores a database indicating the relationship between the TPC setting value set by the transmission power setting unit 110 and the minimum bias setting value of the peak amplifier 106 that satisfies the distortion condition at that time. . That is, it has a function of selecting a bias setting value that can realize high-efficiency operation while satisfying the distortion condition at a desired transmission power, and outputting the selected bias setting value to the noise setting unit 113.
  • FIG. 6 is a diagram showing an example of a table stored in the bias value table 112 shown in FIG.
  • the bias setting unit 113 includes a variable voltage conversion unit (not shown) of the bias circuit of the peak amplifier 106 in order to realize an intended bias value based on the noise setting value output from the bias value table 112. A function for outputting a control signal is provided. A detailed description of the bias value table in FIG. 6 will be described later.
  • the gain of the variable gain amplifier 103 is controlled by the TPC setting value set by the transmission power setting unit 110, and is input to the splitter 104 at the input stage of the Dono / tee amplification function to control the power gain.
  • the information of the TPC set value set by the transmission power setting unit 110 is branched into a system to the variable gain amplifier 103 and a system to the delay adjustment unit 111.
  • the information of the TPC set value input to the system of the delay adjustment unit 111 is subjected to delay adjustment by the delay adjustment unit 111, and then is biased by the bias value tape node 112 which is a bias circuit of the peak amplifier 106. .
  • the bias value table 112 has the highest efficiency while the Doherty amplification function satisfies a desired distortion characteristic under the power condition determined based on the TPC setting value set by the transmission power setting unit 110.
  • the bias value of the peak amplifier 106 is stored. Therefore, when input to the bias setting signal force bias setting unit 113 output from the bias value table 112, the bias setting unit 113 sets the peak amplifier 106 so that the maximum amplification efficiency can be obtained with a desired distortion characteristic. Control the bias.
  • FIG. 7 is a characteristic diagram showing the relationship between output power and distortion in the power amplifying apparatus shown in FIG. 5, with the horizontal axis representing output power and the vertical axis representing distortion. In other words, the characteristics of the four broken lines in FIG.
  • FIG. 7 are the distortion characteristics when the bias of the peak amplifier 106 is switched, and show that the distortion increases along the vertical axis. In other words, the lower the level of the vertical axis, the smaller the distortion (low distortion).
  • FIG. 8 is a characteristic diagram showing the relationship between output power and efficiency in the power amplifying apparatus shown in FIG. 5, with the horizontal axis representing output power and the vertical axis representing efficiency.
  • the distortion characteristic can be improved.
  • the level of distortion remains below the threshold. Note that the output power at points X and Y at which the distortion characteristics at the respective bias values reach the threshold is the linear maximum output power that satisfies the distortion condition.
  • the efficiency of the power amplifier decreases from the high efficiency of the Doherty amplifier in the low power mode to the efficiency of the balance amplifier (Class AB amplifier) in the high power mode. Since the bias value of the peak amplifier 106 is switched step by step so that the level of the current does not exceed the threshold, the efficiency of the Norrance amplifier (class AB amplifier) does not decrease so much. In other words, as shown in Fig. 7, the bias value that maximizes the efficiency should be selected under the condition that the distortion levels a, b, c, d at each bias value are less than the preset threshold. Thus, as shown in Fig.
  • the efficiency is lower than that of the original Doherty amplifier, but the efficiency can be improved as compared with the balance amplifier (Class AB amplifier).
  • the efficiency of the balance amplifier in the high power mode in Fig. 8 is as follows. The efficiency can be made almost constant as shown by the dashed line in the figure.
  • the bias value of the peak amplifier 106 is gradually closer to the balance amplifier (class AB amplifier) so that the distortion level falls below the threshold. Bias control is performed so that In other words, the bias that brings the bias condition of the peak amplifier 106 closer to the bias condition of the carrier amplifier 105 Take control.
  • the high power mode is entered, instead of turning the peak amplifier 106 into a balance amplifier (class AB amplifier) all at once, gradually increasing the bias level of the peak amplifier 106 gradually increases the balance amplifier ( This makes it possible to increase the linear maximum output power while producing the high efficiency characteristics of the Doherty amplification function. As a result, it is possible to achieve a higher efficiency than that of a balanced amplifier, and to achieve a lower back-off than a simple Donotty amplifier.
  • FIG. 9 is a circuit diagram showing a configuration of carrier amplifier 105 shown in FIG.
  • the carrier amplifier 105 includes a transistor 121, an input matching circuit 122 for inputting an RF signal, a gate bias circuit 123 for covering the first gate bias, a power circuit 124 for covering the drain power source, and an output matching circuit 125. Since this is the same as that of the conventional carrier amplifier, its description is omitted.
  • the transistor 121 may be a bipolar transistor such as a force HBT that uses an FET in this example. In that case, the gate bias voltage is the base bias current.
  • FIG. 10 is a circuit diagram showing a configuration of peak amplifier 106 shown in FIG.
  • the peak amplifier 106 in FIG. 10 is different from the carrier amplifier in FIG. 9 in that a variable voltage converter 126 is added to the gate bias circuit 123, and the variable voltage converter 126 is connected to the second gate bias based on the bias control signal.
  • the noise voltage applied to the gate of the transistor 121 is changed by controlling the above.
  • the bias of the peak amplifier 106 is controlled to gradually approach the balance amplifier (class AB amplifier) while keeping the distortion level below the threshold. is doing.
  • the transistor 121 may be a bipolar transistor such as a force HBT that uses an FET in this example. In that case, the gate bias voltage becomes the base bias current.
  • This bias value table includes a TPC setting value set by the transmission power setting unit 110, a noise value biased to the peak amplifier 106, and a bias setting for setting the bias value of the peak amplifier 106 to a desired value.
  • the relationship with values is represented in a table. For example, if the TPC setting value set in the transmission power setting section 110 is negative ( ⁇ 50 to ⁇ lOdBm), the bias value is set to OV. Therefore, the bias setting value in the bias value table 112 is set to 0. That is, the bias supplied from the noise setting unit 113 to the peak amplifier 106 is set to zero, the peak amplifier 106 is turned off, and the carrier amplifier 105 is operated as a Dono / tee amplifier.
  • the bias value table 112 is biased to change the bias value from 0.02 to 0.26 V. Switch the set value in steps from 1 to 13. As a result, the bias level applied from the bias setting unit 113 to the peak amplifier 106 increases stepwise, so that the amplification characteristics of the peak amplifier 106 approach the class AB amplifier of the carrier amplifier 105.
  • the bias set value in the bias value table 112 is fixed to 15 in order to keep the bias value constant at 0.30 V. .
  • the maximum value of the bias value of the peak amplifier 106 is set to be equal to or less than the bias value of the carrier amplifier 105. In other words, when the bias values of the carrier amplifier 105 and the peak amplifier 106 become equal, the entire power amplifying apparatus becomes a balance amplifier.
  • FIG. 11 is a configuration diagram of a power amplifying device applied to Embodiment 2 of the present invention.
  • the difference between the power amplifying device of the second embodiment shown in FIG. 1 and the power amplifying device of the first embodiment shown in FIG. 5 is that a temperature detection unit (temperature detection means) 114 is added to the noise value table 112. This is the point where temperature information is input. Therefore, only the parts different from the power amplifying apparatus of the first embodiment shown in FIG. 5 will be described.
  • temperature detector 114 detects the operating temperature of the power amplifier, and inputs the operating temperature of the power amplifier to bias value table 112 together with the TPC set value set by transmission power setting unit 110.
  • the bias value of the peak amplifier 106 is controlled by the bias setting unit 113 so that the distortion is kept below the threshold value even if the distortion of the power amplifier is caused by the temperature fluctuation.
  • the temperature detection unit 114 detects the operating temperature of the power amplifier and corrects the setting value of the bias value table 112, thereby preventing distortion characteristics from being deteriorated due to temperature fluctuation of the power amplifier.
  • the bias value can be corrected by having the bias value table shown in Fig. 6 for each temperature, and the TPC set value and temperature can be corrected.
  • the bias value can be corrected by obtaining the reference address of the force bias value table. In the latter case, you should have one noise value table.
  • FIG. 12 is a configuration diagram of a power amplifying device applied to Embodiment 3 of the present invention.
  • the power amplifying device of Embodiment 3 shown in FIG. 12 differs from the power amplifying device of Embodiment 1 shown in FIG. 5 in that a power deviation table (between the transmission power setting unit 110 and the variable gain amplifier 103 ( (Power deviation means) 115 is added.
  • the gain of the entire power amplifying device changes, so that the TPC set value is set.
  • the deviation is investigated in advance, and the TPC setting value (that is, the variable gain control installation value) input to the variable gain amplifier 103 is corrected by the power deviation table 115.
  • a power deviation table 115 is provided for changing the gain control setting value of the variable gain amplifier 103 in accordance with the TPC setting value of the transmission power setting unit 110.
  • the power deviation table 115 can adjust the set value of the variable gain amplifier 103 to an optimum value.
  • the bias value table 112 is created after considering the power deviation table 115 in the transmission power setting unit 110, the power deviation table 115 may not be provided separately. The configuration in that case is the same as the configuration in FIG.
  • FIG. 13 is a configuration diagram of a power amplifying device applied to Embodiment 4 of the present invention.
  • the difference between the power amplifying device in the fourth embodiment shown in FIG. 13 and the power amplifying device in the first embodiment shown in FIG. 5 is that the configuration for inputting the modulation method switching signal 116 to the bias value table 112 has been added. Is a point. In other words, if the modulation method changes, the peak factor of the transmission power changes and the distortion characteristics change. Therefore, the modulation method switching signal (modulation method switching information detecting means) 116 The bias value is changed to compensate for the change in distortion characteristics.
  • the power amplifying apparatus of the fourth embodiment inputs the modulation scheme switching signal 116 inputted with the baseband unit power to the bias value table 112 and transmits it by the transmission power setting unit 110 (not shown). Based on the TPC setting value and the modulation system switching signal 116, the bias characteristic of the peak amplifier 106 is switched to compensate for distortion characteristics caused by the peak factor that varies depending on the modulation system.
  • the power amplifier of the present invention can be effectively used for a mobile communication terminal such as a mobile terminal capable of transmitting a radio signal with high efficiency and low distortion.

Abstract

L'invention concerne un appareil d'amplification de puissance applicable à un terminal mobile, notamment un terminal mobile d'un système à porteuses multiples, et offrant un haut rendement et de faibles distorsions. Dans cet appareil d'amplification de puissance, une valeur TPC fixée par une partie (110) de réglage de puissance de transmission est soumise à un réglage de retard par une partie (111) de réglage de retard et ensuite mise en entrée d'une table (112) de valeur de polarisation qui est un circuit de polarisation d'un amplificateur de crête (106). La table (112) de valeur de polarisation stocke une valeur de polarisation de l'amplificateur de crête (106) telle que l'appareil d'amplification de puissance présente le rendement maximal, tout en satisfaisant une caractéristique de distorsion souhaitée sur une condition de puissance décidée selon la valeur de TPC fixée par la partie (110) de réglage de puissance de transmission. Une partie (113) de réglage de polarisation, commande ainsi, à partir d'un signal de réglage de polarisation provenant de la table (112) de valeur de polarisation, la polarisation de l'amplificateur de crête (106) de telle sorte que le rendement d'amplification le plus élevé peut être obtenu avec la caractéristique de distorsion souhaitée. Un amplificateur de type Doherty se transforme donc graduellement en un amplificateur de classe AB.
PCT/JP2006/314899 2006-07-27 2006-07-27 Appareil d'amplification de puissance WO2008012898A1 (fr)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151787A (ja) * 2010-01-20 2011-08-04 Pohang Univ Of Science & Technology Academy-Industry Cooperation 分布ドハティ電力増幅器
JP2012049858A (ja) * 2010-08-27 2012-03-08 Hitachi Kokusai Electric Inc 電力増幅器
EP2980990A4 (fr) * 2013-03-26 2017-03-08 Nec Corporation Amplificateur de puissance
EP3041133A4 (fr) * 2013-08-28 2017-04-26 Kabushiki Kaisha Toshiba Dispositif d'amplification de puissance et procédé de commande pour dispositif d'amplification de puissance
CN107294498A (zh) * 2016-03-30 2017-10-24 中国科学院苏州纳米技术与纳米仿生研究所 一种非对称Doherty放大器

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JP2011151787A (ja) * 2010-01-20 2011-08-04 Pohang Univ Of Science & Technology Academy-Industry Cooperation 分布ドハティ電力増幅器
US8305141B2 (en) 2010-01-20 2012-11-06 Postech Academy-Industry Foundation Distributed Doherty power amplifier
JP2012049858A (ja) * 2010-08-27 2012-03-08 Hitachi Kokusai Electric Inc 電力増幅器
EP2980990A4 (fr) * 2013-03-26 2017-03-08 Nec Corporation Amplificateur de puissance
US9667198B2 (en) 2013-03-26 2017-05-30 Nec Corporation Power amplifier
EP3041133A4 (fr) * 2013-08-28 2017-04-26 Kabushiki Kaisha Toshiba Dispositif d'amplification de puissance et procédé de commande pour dispositif d'amplification de puissance
CN107294498A (zh) * 2016-03-30 2017-10-24 中国科学院苏州纳米技术与纳米仿生研究所 一种非对称Doherty放大器
CN107294498B (zh) * 2016-03-30 2020-11-06 中国科学院苏州纳米技术与纳米仿生研究所 一种非对称Doherty放大器

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