WO2008000243A3 - Oberflächenemittierender halbleiterkörper mit vertikaler emissionsrichtung und stabilisierter emissionswellenlänge - Google Patents

Oberflächenemittierender halbleiterkörper mit vertikaler emissionsrichtung und stabilisierter emissionswellenlänge Download PDF

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Publication number
WO2008000243A3
WO2008000243A3 PCT/DE2007/001148 DE2007001148W WO2008000243A3 WO 2008000243 A3 WO2008000243 A3 WO 2008000243A3 DE 2007001148 W DE2007001148 W DE 2007001148W WO 2008000243 A3 WO2008000243 A3 WO 2008000243A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor body
surface emitting
stabilised
emitting semiconductor
emission direction
Prior art date
Application number
PCT/DE2007/001148
Other languages
English (en)
French (fr)
Other versions
WO2008000243A2 (de
Inventor
Peter Brick
Wolfgang Diehl
Stephan Lutgen
Original Assignee
Osram Opto Semiconductors Gmbh
Peter Brick
Wolfgang Diehl
Stephan Lutgen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh, Peter Brick, Wolfgang Diehl, Stephan Lutgen filed Critical Osram Opto Semiconductors Gmbh
Priority to US12/307,120 priority Critical patent/US8208512B2/en
Priority to EP07785581A priority patent/EP2036171A2/de
Priority to JP2009516890A priority patent/JP2009542016A/ja
Publication of WO2008000243A2 publication Critical patent/WO2008000243A2/de
Publication of WO2008000243A3 publication Critical patent/WO2008000243A3/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

Es wird ein oberflächenemittierender Halbleiterkörper mit einer vertikalen Emissionsrichtung angegeben, welcher zum Betrieb mit einem Resonator vorgesehen ist und eine Halbleiterschichtenfolge mit einem aktiven Bereich umfasst, wobei der Halbleiterkörper derart wellenlängenstabilisierend ausgebildet ist, dass eine Peak-Wellenlänge der im aktiven Bereich erzeugten Strahlung in einem vorgegebenen Betriebsbereich des Halbleiterkörpers gegenüber Änderungen der Ausgangsleistung der im aktiven Bereich erzeugten Strahlung stabilisiert ist.
PCT/DE2007/001148 2006-06-30 2007-06-28 Oberflächenemittierender halbleiterkörper mit vertikaler emissionsrichtung und stabilisierter emissionswellenlänge WO2008000243A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/307,120 US8208512B2 (en) 2006-06-30 2007-06-28 Surface emitting semiconductor body with vertical emission direction and stabilized emission wavelength
EP07785581A EP2036171A2 (de) 2006-06-30 2007-06-28 Oberflächenemittierender halbleiterkörper mit vertikaler emissionsrichtung und stabilisierter emissionswellenlänge
JP2009516890A JP2009542016A (ja) 2006-06-30 2007-06-28 垂直方向の放射方向および安定化された放射波長を有する表面発光型の半導体基体

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102006030247 2006-06-30
DE102006030247.8 2006-06-30
DE102006042196.5 2006-09-08
DE102006042196A DE102006042196A1 (de) 2006-06-30 2006-09-08 Oberflächenemittierender Halbleiterkörper mit vertikaler Emissionsrichtung und stabilisierter Emissionswellenlänge

Publications (2)

Publication Number Publication Date
WO2008000243A2 WO2008000243A2 (de) 2008-01-03
WO2008000243A3 true WO2008000243A3 (de) 2008-12-04

Family

ID=38757150

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2007/001148 WO2008000243A2 (de) 2006-06-30 2007-06-28 Oberflächenemittierender halbleiterkörper mit vertikaler emissionsrichtung und stabilisierter emissionswellenlänge

Country Status (6)

Country Link
US (1) US8208512B2 (de)
EP (1) EP2036171A2 (de)
JP (1) JP2009542016A (de)
DE (1) DE102006042196A1 (de)
TW (1) TWI373181B (de)
WO (1) WO2008000243A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008009108A1 (de) * 2008-02-14 2009-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterlasers sowie Halbleiterlaser
DE102008038804A1 (de) * 2008-08-13 2010-02-18 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaserchip und Laseranordnung mit einem oberflächenemittierenden Halbleiterchip
JP2021114594A (ja) * 2019-08-27 2021-08-05 株式会社東芝 光半導体素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5712865A (en) * 1995-09-28 1998-01-27 Sandia Corporation Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof
WO2002047223A1 (en) * 2000-12-08 2002-06-13 University Of Southampton Optically pumped vertical cavity semiconductor laser device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2500605B2 (ja) * 1993-06-08 1996-05-29 日本電気株式会社 面型発光素子
JPH07226535A (ja) * 1994-02-09 1995-08-22 Omron Corp 半導体発光素子、光学検知装置、光学的情報検知装置、投光器及び光ファイバーモジュール
JPH0992924A (ja) * 1995-09-25 1997-04-04 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
US6327293B1 (en) * 1998-08-12 2001-12-04 Coherent, Inc. Optically-pumped external-mirror vertical-cavity semiconductor-laser
JP2003107241A (ja) * 2001-09-28 2003-04-09 Nagoya Industrial Science Research Inst 多層反射膜
TW595059B (en) * 2002-05-03 2004-06-21 Osram Opto Semiconductors Gmbh Optically pumped semiconductor laser device
US6859481B2 (en) * 2002-07-16 2005-02-22 Applied Optoelectronics, Inc. Optically-pumped multiple-quantum well active region with improved distribution of optical pumping power
DE102004011456A1 (de) * 2004-01-30 2005-08-18 Osram Opto Semiconductors Gmbh Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter
EP1560306B1 (de) 2004-01-30 2014-11-19 OSRAM Opto Semiconductors GmbH Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter
JP4409484B2 (ja) * 2004-08-20 2010-02-03 パナソニック株式会社 半導体発光装置
KR101168283B1 (ko) * 2005-08-09 2012-07-30 삼성전자주식회사 고출력 수직외부공진형 표면발광 레이저
US7801197B2 (en) * 2006-06-16 2010-09-21 Epicrystals Oy High power laser device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5712865A (en) * 1995-09-28 1998-01-27 Sandia Corporation Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof
WO2002047223A1 (en) * 2000-12-08 2002-06-13 University Of Southampton Optically pumped vertical cavity semiconductor laser device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BONDAREV V YU ET AL: "E-beam pumped GaInP/AlGaInP MQW VCSEL", 2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS. CONFERENCE PROCEEDINGS. (IPRM). SANTA BARBARA, CA, MAY 12 - 16, 2003; [INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS], NEW YORK, NY : IEEE, US, 12 May 2003 (2003-05-12), pages 182 - 185, XP010746870, ISBN: 978-0-7803-7704-2 *
CORZINE S W ET AL: "DESIGN OF FABRY-PEROT SURFACE-EMITTING LASERS WITH A PERIODIC GAIN STRUCTURE", IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, USA, vol. 25, no. 6, 1 June 1989 (1989-06-01), pages 1513 - 1524, XP000054772, ISSN: 0018-9197 *
MARK KUZNETSOV ET AL: "Design and Characteristics of High-Power (0.5-W CW) Diode-Pumped Vertical-External-Cavity Surface-Emitting Semiconductor Lasers with Circular TEM Beams", IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 5, no. 3, 1 June 1999 (1999-06-01), XP011062541, ISSN: 1077-260X *

Also Published As

Publication number Publication date
TWI373181B (en) 2012-09-21
JP2009542016A (ja) 2009-11-26
WO2008000243A2 (de) 2008-01-03
EP2036171A2 (de) 2009-03-18
US8208512B2 (en) 2012-06-26
US20100014549A1 (en) 2010-01-21
TW200818641A (en) 2008-04-16
DE102006042196A1 (de) 2008-01-03

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