TWI373181B - Surface-emitting semiconductor body with vertical emission direction and stabilized emission wavelength - Google Patents
Surface-emitting semiconductor body with vertical emission direction and stabilized emission wavelengthInfo
- Publication number
- TWI373181B TWI373181B TW096122054A TW96122054A TWI373181B TW I373181 B TWI373181 B TW I373181B TW 096122054 A TW096122054 A TW 096122054A TW 96122054 A TW96122054 A TW 96122054A TW I373181 B TWI373181 B TW I373181B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor body
- emitting semiconductor
- stabilized
- vertical
- emission wavelength
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006030247 | 2006-06-30 | ||
DE102006042196A DE102006042196A1 (de) | 2006-06-30 | 2006-09-08 | Oberflächenemittierender Halbleiterkörper mit vertikaler Emissionsrichtung und stabilisierter Emissionswellenlänge |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200818641A TW200818641A (en) | 2008-04-16 |
TWI373181B true TWI373181B (en) | 2012-09-21 |
Family
ID=38757150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096122054A TWI373181B (en) | 2006-06-30 | 2007-06-20 | Surface-emitting semiconductor body with vertical emission direction and stabilized emission wavelength |
Country Status (6)
Country | Link |
---|---|
US (1) | US8208512B2 (zh) |
EP (1) | EP2036171A2 (zh) |
JP (1) | JP2009542016A (zh) |
DE (1) | DE102006042196A1 (zh) |
TW (1) | TWI373181B (zh) |
WO (1) | WO2008000243A2 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008009108A1 (de) * | 2008-02-14 | 2009-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterlasers sowie Halbleiterlaser |
DE102008038804A1 (de) * | 2008-08-13 | 2010-02-18 | Osram Opto Semiconductors Gmbh | Oberflächenemittierender Halbleiterlaserchip und Laseranordnung mit einem oberflächenemittierenden Halbleiterchip |
JP2021114594A (ja) * | 2019-08-27 | 2021-08-05 | 株式会社東芝 | 光半導体素子 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2500605B2 (ja) * | 1993-06-08 | 1996-05-29 | 日本電気株式会社 | 面型発光素子 |
JPH07226535A (ja) * | 1994-02-09 | 1995-08-22 | Omron Corp | 半導体発光素子、光学検知装置、光学的情報検知装置、投光器及び光ファイバーモジュール |
JPH0992924A (ja) * | 1995-09-25 | 1997-04-04 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レーザ |
US5712865A (en) * | 1995-09-28 | 1998-01-27 | Sandia Corporation | Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof |
US6327293B1 (en) * | 1998-08-12 | 2001-12-04 | Coherent, Inc. | Optically-pumped external-mirror vertical-cavity semiconductor-laser |
GB2369929A (en) * | 2000-12-08 | 2002-06-12 | Univ Southampton | Semiconductor laser device |
JP2003107241A (ja) * | 2001-09-28 | 2003-04-09 | Nagoya Industrial Science Research Inst | 多層反射膜 |
TW595059B (en) * | 2002-05-03 | 2004-06-21 | Osram Opto Semiconductors Gmbh | Optically pumped semiconductor laser device |
US6859481B2 (en) * | 2002-07-16 | 2005-02-22 | Applied Optoelectronics, Inc. | Optically-pumped multiple-quantum well active region with improved distribution of optical pumping power |
DE102004011456A1 (de) * | 2004-01-30 | 2005-08-18 | Osram Opto Semiconductors Gmbh | Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter |
EP1560306B1 (de) | 2004-01-30 | 2014-11-19 | OSRAM Opto Semiconductors GmbH | Oberflächenemittierender Halbleiterlaser mit einem Interferenzfilter |
JP4409484B2 (ja) * | 2004-08-20 | 2010-02-03 | パナソニック株式会社 | 半導体発光装置 |
KR101168283B1 (ko) * | 2005-08-09 | 2012-07-30 | 삼성전자주식회사 | 고출력 수직외부공진형 표면발광 레이저 |
US7801197B2 (en) * | 2006-06-16 | 2010-09-21 | Epicrystals Oy | High power laser device |
-
2006
- 2006-09-08 DE DE102006042196A patent/DE102006042196A1/de not_active Withdrawn
-
2007
- 2007-06-20 TW TW096122054A patent/TWI373181B/zh not_active IP Right Cessation
- 2007-06-28 WO PCT/DE2007/001148 patent/WO2008000243A2/de active Application Filing
- 2007-06-28 JP JP2009516890A patent/JP2009542016A/ja active Pending
- 2007-06-28 US US12/307,120 patent/US8208512B2/en active Active
- 2007-06-28 EP EP07785581A patent/EP2036171A2/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
DE102006042196A1 (de) | 2008-01-03 |
US20100014549A1 (en) | 2010-01-21 |
WO2008000243A3 (de) | 2008-12-04 |
JP2009542016A (ja) | 2009-11-26 |
WO2008000243A2 (de) | 2008-01-03 |
EP2036171A2 (de) | 2009-03-18 |
US8208512B2 (en) | 2012-06-26 |
TW200818641A (en) | 2008-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |