WO2007130630A2 - Method and apparatus for isolated bevel edge clean - Google Patents
Method and apparatus for isolated bevel edge clean Download PDFInfo
- Publication number
- WO2007130630A2 WO2007130630A2 PCT/US2007/010929 US2007010929W WO2007130630A2 WO 2007130630 A2 WO2007130630 A2 WO 2007130630A2 US 2007010929 W US2007010929 W US 2007010929W WO 2007130630 A2 WO2007130630 A2 WO 2007130630A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- edge
- bristle brush
- brush unit
- clean
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
- B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
- B08B11/02—Devices for holding articles during cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Definitions
- the present invention relates generally to semiconductor substrate processing, and more particularly, to a method and apparatus for cleaning substrate edges before, during and after fabrication operations.
- Semiconductor chip fabrication is a complicated process that involves a coordinated series of fabrication operations. These operations can be broadly characterized to include steps such as layering, patterning, etching, doping, chemical mechanical polishing (CMP), etc. It is well known that during the various steps of these operations, the surfaces, edges, bevels and notches of the semiconductor substrate (wafer) become contaminated with a layer of residue comprised of particulates, organic materials, metallic impurities, etc. There is a need to clean the surface of the substrate of these contaminated particles in order to maximize the yield of contaminant-free chips.
- steps such as layering, patterning, etching, doping, chemical mechanical polishing (CMP), etc. It is well known that during the various steps of these operations, the surfaces, edges, bevels and notches of the semiconductor substrate (wafer) become contaminated with a layer of residue comprised of particulates, organic materials, metallic impurities, etc. There is a need to clean the surface of the substrate of these contaminated particles in order to maximize
- Some examples of operations that may result in unwanted substrate contamination include plasma etching and CMP.
- plasma etching the substrate is placed in a reaction chamber and exposed to charged plasma which physically or chemically removes layers of material off the substrate surface.
- a post-etch cleaning step follows whereby contaminant residue deposited on the substrate during the etching process is removed.
- this post-etch cleaning step significantly removes or reduces the amount of post-etch contaminant residue on the substrate.
- one type of post-etch residue that does not readily lend itself to removal by conventional post-etch chemical-based cleaning methods is organic 'bevel' polymer residue found on the substrate bevel edge, notch, and the portion of the backside of the substrate.
- Bevel polymers have unique properties, in that they are relatively inert and adhere to each other and to the substrate surface with a strong bond that is relatively hard to break.
- semiconductor fabricators look towards shrinking the edge exclusion zone of the semiconductor substrate to increase the substrate's chip yield, it is becoming increasingly important to remove this type of residue.
- the present invention fills the need by providing an improved apparatus for cleaning bevel polymer deposited on a substrate edge. It should be appreciated that the present invention can be implemented in numerous ways, including as an apparatus, a system and a method. Several inventive embodiments of the present invention are described below.
- an apparatus for cleaning an edge of a substrate includes a housing to receive the edge of the substrate.
- a bristle brush unit with a plurality of outwardly extending vanes is located within the housing.
- the bristle brush unit is mounted on a rotating shaft within the housing and aligned such that the outwardly extending vanes contact the edge of the substrate when rotating, for efficient cleaning.
- a system for cleaning an edge of a substrate includes a substrate supporting device to support the substrate.
- the system also includes a bristle brush applicator.
- the bristle brush applicator includes a housing configured to receive the edge of the substrate and a bristle brush unit to aid in the substrate edge cleaning.
- the bristle brush unit has a plurality of outwardly extending vanes and is mounted on a rotating shaft. The bristle brush unit is aligned inside the housing such that the outwardly extending vanes make contact with the edge of the substrate when rotating.
- a method for cleaning an edge of a substrate.
- the method includes receiving the edge of the substrate within a housing.
- a bristle brush unit within the housing is rotated in a direction opposite to an angle of curvature of the outwardly extending vanes.
- the rotating bristle brush unit assists in cleaning the edge of the substrate.
- Figures 1 is a simplified schematic diagram illustrating an edge of a substrate before a cleaning process is applied to the substrate, in accordance with an embodiment of the invention.
- Figure 2 is a simplified schematic diagram illustrating a substrate with a bristle brush unit received within a notch of the substrate, in accordance with an embodiment of the invention.
- Figure 3 illustrates a cross-sectional view of a cavity in a housing containing the bristle brush unit, in accordance with an embodiment of the invention.
- Figures 4A is a cross-sectional view illustrating a housing with a bristle brush unit contained therein and an upper and a lower drainage channel positioned over and under the bristle brush unit, in accordance with an embodiment of the invention.
- Figure 4B is an- alternative embodiment to Figure 4A illustrating two upper drainage channels over and a lower drainage channel under the bristle brush unit, in accordance with an embodiment of the invention.
- Figure 5 illustrates a system with proximity head to introduce a liquid meniscus on a top surface of the substrate in accordance with an embodiment of the invention.
- Figure 6 illustrates a substrate edge cleaning system in accordance with an embodiment of the invention.
- Substrate edge cleaning apparatus, systems and methods are very important to the ultimate quality of the resulting semiconductor products, e.g., microchips.
- the bevel polymers deposited on the substrate edges are treated with mechanical and chemical scrubbing that cuts, tears and removes the bevel polymers from the substrate edge.
- a substrate is used to refer to a thin slice of a semi-conductor material (usually silicon), from which microchips are made.
- the substrate can also be a flat panel substrate, which typically takes on a rectangular or square shape.
- Figure 1 shows a substrate 100 having an edge 101 and a notch 102.
- the bevel polymer 103 forms in the notch 102 and on the outer curvature and back underside curvature of the edge 101 with more concentration on the back underside curvature of the edge 101 of the substrate 100.
- This concentration of the bevel polymer 103 is common due to the nature of the fabrication operations and the placement of the substrate 100 in various tools during different stages of the fabrication process.
- Figure 2 illustrates a simplified schematic diagram of a substrate 100 with the edge 101 and notch 102 of the substrate 100 being placed in contact with a bristle brush unit 200 mounted on a rotating shaft 202.
- a bristle brush unit 200 mounted on a rotating shaft 202.
- the vanes of the bristle brush unit 200 contacts the substrate 100 to clean the edge 101 and notch 102 of the substrate 100.
- Figure 2 illustrates a single bristle brush unit 200 mounted on the rotating shaft 202, a plurality of bristle brush units 200 could be mounted on the rotating shaft 202 to cover a wider cleaning area and aid in efficient cleaning.
- the bristle brush unit 200 efficiently cleans the edge 101 of the substrate 100 and any hard-to-reach areas of the substrate 100, such as the notch 102, where the bevel polymer 103 is deposited.
- Figure 3 illustrates a cross-sectional view of a cavity 210 in a housing 205 containing a bristle brush unit 200, in an embodiment of the invention.
- the housing 205 is used to: a) hold the bristle brush unit 200, and b) receive the edge 101 of the substrate 100 for cleaning.
- the housing 205 may be made of a chemically resistant material such as PolyVinylidine DiFluoride (commonly marketed as KYNAR), Polytetrafluoroethylene (commonly marketed as TEFLON), Polypropolene, Polyethylene Terephthalate (PET), polyvinyl chloride (PVC), Acrylic, Polyetheretherketone (PEEK), Delrin, Acetal, or Polyphenylene Sulfide (PPS). Other chemically resistant materials may be used so long as the material is compatible with any cleaning chemistries provided herein.
- the cavity 210 in the housing 205 is a hollow area in which the bristle brush unit 200 is located.
- the bristle brush unit 200 is oriented so that portions of the outwardly extending vanes (vanes) 201 that make up the bristle brush unit 200 come in contact with the substrate 100 for efficient cleaning.
- the bristle brush unit 200 inside the cavity 210 in the housing 205 is mounted on a rotating shaft 202.
- the vanes 201 of the bristle brush unit 200 are placed in contact with the surface of the substrate 100 and as the bristle brush unit 200 rotates, the vanes 201 will hit the underside surface edge of the substrate 100 to forcibly abrade any deposited layer.
- the bristle brush unit 200 enables the delivery of fluids, such as a cleaning chemistry that aid in substrate edge cleaning.
- the bristle brush unit 200, including the vanes 201 is made up of a porous material such as nylon with 1 micron alumina impregnated in the nylon. It should be noted that the bristle brush unit 200 is configured within the housing 205 such that the bristle brush unit 200 can be removed and replaced, thus bristle brush unit 200 is a consumable item.
- an abrasive material is distributed within and throughout the bristle brush unit 200, including the vanes 201, to provide greater frictional contact and apply more abrasive force to the bevel polymer 103 on the surface of the substrate 100 during the cleaning process.
- the distribution of the abrasive material can be random or can be uniform.
- the amount and nature of abrasive material distributed throughout the bristle brush unit and the vanes 201 may depend on the nature of the bevel polymer deposit and the amount of frictional contact that is needed to scrape the bevel polymer from the edge 101 and notch 102 of the substrate.
- the abrasive material is chosen such that it is capable of removing the bevel polymer 103 from the edge 101 of substrate 100 without scratching or damaging the surface of the substrate 100.
- an abrasive material that has a hardness level greater than the hardness level of the bevel polymer 103 but less than the hardness level of the substrate 100, is used. Keeping the hardness level of the abrasive material greater than the hardness level of the bevel polymer 103 facilitates in the scrubbing and removal of the bevel polymer 103 from substrate edge 101.
- the hardness level of abrasive material in this embodiment of the invention, is between about 3 Mohs and about 7 Mohs on the Mohs hardness scale.
- abrasive material used in this embodiment examples include titanium oxide (5.5 — 6.5 Mohs), zirconium oxide (6.5 Mohs), or amorphous silicon oxide (6.5 — 7 Mohs), and silicon (7 Mohs).
- abrasive materials with hardness level greater than the hardness level of the substrate's surface have been shown to aid in removing bevel polymer without scratching or damaging the surface of the substrate 100.
- the hardness level of abrasive material, in this embodiment of the invention is between about 8 Mohs and 9 Mohs on the Mohs hardness scale.
- Example of abrasive material used in this embodiment include alumina (8-9 Mohs).
- the vanes 201 of the bristle brush unit 200 are configured with an angle of curvature.
- the bristle brush unit 200 is rotated around the axis of rotation defined by the rotating shaft 202 in such a way that the direction of rotation of the bristle brush unit 200 is in a direction opposite to the direction of the angle of curvature of the vanes 201.
- Other rotational directions may be implemented as long as the bristle brush unit is capable of making contact with the edge of the substrate 100 and efficiently cleaning the edge of the substrate 100.
- the curvature of the vanes 201 and the. direction of rotation is specified here, this is not meant to be limiting as any suitable shape of vanes 201 and rotation direction may be applied such that the bevel polymer 103 deposited on the underside surface of the substrate 100 gets cleaned.
- a fluid distributor channel 301 in the housing 205 introduces cleaning chemistry to the vanes 201.
- the cleaning chemistry is conducted through the fluid distributor channel 301 and introduced into the cavity 210 and sprayed directly onto the vanes 201 when rotating.
- the fluid distributor channel 301 may be part of the rotating shaft 202 and introduce the cleaning chemistry directly into the bristle brush unit 200 and distributed throughout the vanes 201 while rotating. It should be appreciated that the fluid distributor channel 301 can be positioned anywhere in the housing 205 so long as the function of introducing cleaning chemistry to the vanes 201 of the bristle brush unit 200 is met.
- the cleaning chemistry introduced into the vanes 201 acts as a lubricant on the surface of the substrate and also assists in the breakdown of bevel polymer 103. Continuous exposure to the cleaning chemistry along with the abrasive forces provided by the bristle brush unit 200 breaks down the bevel polymer 103 deposited on the surface of the substrate 100.
- Some examples of cleaning chemistries that may be applied to the substrate edge cleaning process of the present embodiment include about 0.049% to about 49% by weight of Hydrogen fluoride to de-ionized water, about 1% to about 50% by weight of Ammonia to de-ionized water or about 1% to about 100% by weight of one or more amines including Triethlamine, Triethanolamine, Hydroxyethlmorpholine, Hydroxylamine, Dimethylformamide, Dimethylacetamide, Methyldiethanolamine, Diglycolamine, Polymethyldiethylenetriamine to de-ionized water.
- Ammonia solutions may also contain about 0% to about 50% Ammonium Fluoride or about 0% to about 50% Hydrogen Peroxide.
- the amine solutions may also include about 0% to about 70% of Catechol, about 0% to about 70% Phenol, about 0% to about 50% Ammonium Fluoride or about 0% to about 10% of Iminodiacetic acid.
- the cavity 210 inside the housing 205 holding the bristle brush unit 200 further includes a lower drainage channel 303 to receive and remove the chemicals and particles from cleaning.
- the lower drainage channel 303 is located inside the cavity 210 under the bristle brush unit 200 so that the chemicals and particles released during the cleaning process are directed towards an opening of the lower drainage channel 303 and removed.
- the •lower drainage channel 303 is positioned in such a way that the opening of the lower drainage channel 303 inside the cavity 210 is under at least a portion of the bristle brush unit 200 so that the chemicals and particles released during the cleaning process are captured and removed.
- the lower drainage channel 303 is operatively connected to a vacuum source to allow efficient removal of the particles and chemicals.
- the lower drainage channel 303 can be positioned anywhere in the housing 205 so long as the function of removing chemicals and particles released during the cleaning from under the bristle brush unit 200 is met.
- Figures 4A and 4B illustrate two variations of a housing with a bristle brush unit 200 contained therein and channels positioned over and under the bristle brush unit.
- the cavity 210 inside the housing 205 holding the bristle brush unit 200 further includes an upper drainage channel 401 to receive and remove the chemicals and particles released during cleaning.
- the upper drainage channel 401 is positioned over the bristle brush unit 200 inside the cavity 210 so that the chemicals and particles released during the cleaning process are directed towards an opening of the upper drainage channel 401 and removed.
- the upper drainage channel 401 is located tangentially over the surface of the substrate to direct the particles and chemicals released during cleaning into the opening of the upper drainage channel 401.
- the upper drainage channel 401 is located inside the cavity 210 over the bristle brush unit 200 such that the opening of the upper drainage channel 401 inside the cavity 210 is over at least a portion of the bristle brush unit 200.
- the upper drainage channel 401 is operatively connected to a vacuum source to allow efficient removal of the particles and chemicals.
- the upper drainage channel 401 can be positioned anywhere in the housing 205 so long as the function of removing the chemicals and particles released during the cleaning process from over the bristle brush unit 200 is met.
- Figure 4B illustrates a variation of the housing in Figure 4A.
- a pair of upper drainage channels 40 IA and 401B are located inside the cavity 210 of the housing 205 and positioned over the bristle brush unit 200 so that the chemicals and particles released during the cleaning process are directed towards an opening in each of the upper drainage channels 401 A and 40 IB and removed.
- the upper drainage channels 401A and 401B can be positioned anywhere in the housing 205 so long as the function of removing the chemicals and particles released during the cleaning process from over the bristle brush unit 200 is met. Additional upper drainage channels may be used for effective removal of the chemicals and particles from over the bristle brush unit 200.
- a nozzle 305 is provided to introduce fluids, such as de-ionized water, or gases, such as gaseous nitrogen, onto a top surface of the substrate 100.
- the fluids or gases are introduced onto the top surface of the substrate 100 to remove any cleaning chemistry that may make their way on to the top surface of substrate 100 during the cleaning process.
- the fluid acts as a fluid curtain to prevent any material from migrating to a top surface of the substrate being cleaned. It should be appreciated that as the substrate is rotating, centrifugal force will assist in the removal of cleaning chemistry from the top surface of the substrate.
- the nozzle 305 maybe used to spray fluids, such as de-ionized water, or gases, such as gaseous nitrogen, onto the top surface of the substrate.
- fluids such as de-ionized water, or gases, such as gaseous nitrogen
- gases such as gaseous nitrogen
- Other fluids or gases may also be used to clean the surface of the substrate 100 as long as these fluids or gases are compatible with the top surface of the substrate 100 and the cleaning chemistry used.
- the nozzle 305 can be placed anywhere in the apparatus so long as it is able to efficiently introduce fluids or gases which assist in the removal of any unwanted chemicals that may make their way onto the top surface of the substrate
- liquid or gas acting as a curtain will reduce any possibility of a chemical reaction between the top surface of the substrate and the cleaning chemistry, by preventing any migration of unwanted chemicals from the bevel edge to the top surface.
- FIG. 5 shows the presence of a proximity head 500 over the top surface edge 101 of the substrate 100 in the housing 205 that aids in introducing a liquid meniscus over the immediate top surface edge of the substrate 100.
- the location of the proximity head 500 is not constrained to the location illustrated in Figure 5.
- the proximity head 500 can be located anywhere within the housing 205 so long as it is able to introduce liquid meniscus over the immediate top surface edge of the substrate 100. In another embodiment of the invention, the proximity head 500 can be located to the side of the surface edge of the substrate 100.
- the liquid meniscus provides a continuous barrier over the immediate top surface of the substrate 100 and prevents any cleaning chemistry or other impurities in the form of particles from reaching the top surface edge of the substrate 100.
- the meniscus barrier thus, prevents interaction between the cleaning chemistry and exposed metal lines present on the top of the substrate 100, thereby reducing damage to the top surface of the substrate 100.
- the proximity head 500 includes the capability to continuously introduce liquid , such as de-ionized water, to form a meniscus.
- a vacuum source to aid in the formation of the meniscus and an optimal drying agent such as isopropylalcohol are also included.
- the proximity head 500 has been described in detail in other co-pending application of the assignee, referenced below.
- proximity head For additional information with respect to the proximity head, reference can be made to an exemplary proximity head, as described in the U.S. Patent No. 6,616,772, issued on September 9, 2003 and entitled "METHODS FOR WAFER PROXIMITY CLEANING AND DRYING.”
- Figure 6 illustrates an edge cleaning system in one embodiment of the invention.
- the substrate edge cleaning system as illustrated in Figure 6, includes a substrate supporting device and a bristle brush applicator.
- the supporting device is provided to receive and support the substrate on a selected plane.
- the substrate supporting device includes a pair of drive rollers 602 distributed along the circumference of the substrate 100 to receive the edge 101 of the substrate 100, in one embodiment of the invention. These drive rollers 602 fit the profile of the substrate edge 101 and assist in spinning the substrate 100 around to expose different areas of the substrate edge 101 to the bristle brush unit 200. Different configurations and positions for the drive rollers 602 are possible.
- the drive rollers 602 and the substrate 100 could be rotated along their axes by use of a motor (not shown) or by other mechanical means.
- the substrate supporting device also includes one or more stabilizer wheels 604 distributed along the circumference of the substrate 100, to stabilize the substrate 100 along the selected plane of rotation during the cleaning process.
- a pair of stabilizer wheels 604 has been used. Different configurations and positions for the stabilizer wheels 604 are possible as long as the stabilizer wheels 604 are able to stabilize and maintain the substrate 100 in the selected plane of rotation, during the cleaning process.
- a bristle brush applicator is provided to the underside of the substrate 100.
- the bristle brush applicator includes a housing 205 and a bristle brush unit 200 inside a cavity 210 in the housing 205.
- the bristle brush unit 200 is made up of a plurality of outwardly extending vanes 201 and mounted on a rotating shaft 202 so that the vanes 201 of the bristle brush unit 200 are in contact with the edge 101 of the substrate 100.
- the bristle brush unit 200 is configured within the housing 205 such that the bristle brush unit 200 can be removed and replaced with a newer and fresher bristle brush unit 200.
- a fluid distributor channel 301 introduces cleaning chemistry into the vanes 201 of the bristle brush unit 200.
- a nozzle 305 to spray or introduce fluids, such as de-ionized water, or gases, such as gaseous Nitrogen, onto the top surface of the substrate 100, is provided within the housing 205.
- the nozzle 305 is capable of varying the pressure of gases or fluids introduced over the top surface of the substrate 100.
- a proximity head 500 to introduce liquid meniscus layer over the immediate top surface edge of the substrate 100 is provided.
- An upper drainage channel 401 positioned over the bristle brush unit 200 and a lower drainage channel 303 positioned under the bristle brush unit 200 and each connected to a vacuum source assist in removing the cleaning chemistry and particles released during the cleaning process from over and under the bristle brush unit 200.
- an underside roller brush 606 is placed in contact with the underside of the substrate 100 to assist in the removal of cleaning chemistry and particles from the underside of the substrate 100.
- the underside roller brush 606 is made of a porous material such as PVA.
- the underside roller brush 606 is rotated around its axis along the under surface of the substrate 100 using a motor (not shown) or some other mechanical means, to assist in the removal of chemicals and particles that settle on the under surface of the substrate 100.
- the rotational speed of the underside roller brush 606 can be varied to provide for efficient cleaning of the underside of the substrate 100.
- Cleaning chemistry maybe introduced into the underside roller brush 606 using a fluid distributor channel through the underside roller brush 606. The cleaning chemistry provides the lubrication and assists in the chemical break-down of particles that settle on the underside of the substrate 100.
- a method to clean an edge 101 of a substrate 100 is explained in great detail in one embodiment, with reference to the system illustrated in Figure 6.
- the substrate is received and supported on a supporting device and a bristle brush applicator is applied to the edge 101 of the substrate 100.
- the bristle brush applicator includes a housing 205, to receive the edge 101 of the substrate 100 in a particular plane.
- the housing also includes a cavity 210 within which a bristle brush unit 200 with outwardly extending vanes (vanes) 201 is received.
- the bristle brush unit 200 is mounted on a rotating shaft 202 such that the vanes 201 are in contact with the edge 101 of the substrate 100 when the bristle brush applicator is applied to the edge 101 of the substrate 100.
- the supporting device includes a pair of stabilizer wheels 604 to support the substrate 100 along a selected plane.
- a pair of drive rollers 602 receives the edge 101 of the substrate 100 and rotates the substrate 100 along the selected plane.
- a nozzle 305 to spray or introduce fluid or gas onto the top surface of the substrate 100 or a proximity head to introduce a liquid meniscus to the immediate top surface of the substrate is provided.
- Cleaning chemistry is applied to the vanes 201 of the bristle brush unit 200 through a fluid distributor channel 301. Applying the cleaning chemistry to the vanes 201 includes introducing the cleaning chemistry through the fluid distributor channel 301 and spraying the cleaning chemistry directly onto the vanes 201 of the bristle brush unit 200.
- An alternate way of applying cleaning chemistry to the vanes 201 is by conducting the cleaning chemistry through the fluid distributor channel 301 into the bristle brush unit 200 directly and then distributing it throughout the vanes 201.
- the cleaning chemistry assists in lubricating the surface of the substrate 100 and in breaking-down the bevel polymer 103 deposited on the edge of the substrate 100.
- the bristle brush unit 200 is rotated along its axis at a velocity vl with the vanes 201 making contact with the edge of the substrate 100 which is rotating at a velocity v2 along the substrate's selected plane of rotation.
- the bristle brush unit's axis of rotation is perpendicular to the surface of the substrate 100.
- the stabilizer wheels 604 keep the substrate 100 steady along the selected plane of rotation and drive rollers 602 provide the force for the substrate 100 to rotate along the selected plane.
- the rotation of substrate 100, bristle brush unit 200, drive rollers 602 can be achieved by use of one or more motors (not shown) or by any other mechanical means.
- the cleaning chemistry in the vanes 201 of the bristle brush unit 200 interfaces with the edge 101 of the substrate 100 providing the lubrication to the surface of substrate 100. Simultaneously, the cleaning chemistry interacts with the bevel polymer 103 on the edge of substrate 100 to cut the bond binding the bevel polymer 103 to the edge 101 of substrate 100.
- An abrasive material distributed in the vanes 201 of the bristle brush unit 200 exposed to the edge 101 of the substrate 100 contact the edge of the substrate 100 during rotation and simultaneously works to cut and tear the bevel polymer 103 from the edge 101 of substrate 100.
- a nozzle 305 is provided to introduce fluids, such as de- ionized water, or gases, such as gaseous nitrogen, using variable pressure onto the top surface of the substrate 100.
- the fluids or gases introduced using variable pressure further assist in creating a barrier for the cleaning chemistry and other particle debris thereby preventing the cleaning chemistry and particles from reaching the top surface of the substrate and chemically reacting with the metal lines on the top surface of the substrate 100.
- a liquid meniscus is introduced through a proximity head onto the immediate top surface of the substrate 100 creating a liquid barrier. The liquid meniscus prevents any cleaning chemistry and particle debris released during the cleaning process to reach the top surface of the substrate 100.
- the material used to make the bristle brush unit 200 maybe porous and formed from materials such as nylon.
- the abrasive material used in this embodiment are selected from a group consisting of titanium oxide, zirconium oxide, amorphous silicon oxide, silicon and alumina.
- the cleaning chemistry that may be applied to the substrate include about 0.049% to about 49% by weight of Hydrogen fluoride to de-ionized water, about 1% to about 50% by weight of
- Ammonia to de-ionized water or about 1% to about 100% by weight of one or more amines including Triethlamine, Triethanolamine, Hydroxyethlmorpholine, Hydroxylamine, Dimethylformamide, Dimethylacetamide, Methyldiethanolamine, Diglycolamine, Polymethyldiethylenetriamine to de-ionized water.
- Ammonia solutions may also contain about 0% to about 50% Ammonium Fluoride or about 0% to about 50% Hydrogen Peroxide.
- the amine solutions may also include about 0% to about 70% of Catechol, about 0% to about 70% Phenol, about 0% to about 50% Ammonium Fluoride or about 0% to about 10% of Iminodiacetic acid.
- the housing 205 may be made of a chemically resistant material such as PolyVinylidine DiFluoride (commonly marketed as KYNAR), Polytetrafluoroethylene (commonly marketed as TEFLON), Polypropolene, Polyethylene Terephthalate (PET) 3 polyvinyl chloride (PVC), Acrylic, Polyetheretherketone (PEEK), Delrin, Acetal, or Polyphenylene Sulfide (PPS).
- KYNAR PolyVinylidine DiFluoride
- TEFLON Polytetrafluoroethylene
- PET Polyethylene Terephthalate
- PVC Polyvinyl chloride
- PEEK Polyetheretherketone
- Delrin Acetal
- PPS Polyphenylene Sulfide
- Figure 6 is between about 5000 rotations per minute (rpm) to about 20,000 rpm and the velocity of the substrate v2 along the plane of rotation of the substrate 100 is between about 1 rpm to 20 rpm.
- the flow rate resulting from the vacuum source in one embodiment of the invention is about 90 standard liters per minute (slm).
- the substrate 100 is subjected to a cleaning cycle that includes a series of cleaning steps.
- the system used in this embodiment is similar to the system illustrated in Figure 6.
- a trimmed underside roller brush 606 is used to remove bevel polymer 103 that was deposited on the under side of the substrate during fabrication process.
- the underside roller brush 606 is rotated at a velocity relative to the velocity at which the substrate is rotated along the substrate's axis of rotation and applied along the underside surface of the substrate 100.
- the underside roller brush 606 helps in removing the bevel polymer 103, chemicals and particles that may have settled on the underside of the substrate 100 during fabrication and cleaning process.
- the underside roller brush 606 is made of a porous material similar to the bristle brush unit 200 explained earlier.
- the substrate is exposed to the bristle brush unit 200 rotating at about 10,000 rotations per minute.
- the bristle brush unit 200 in this embodiment including the vanes 201, is made of porous material to enable distribution of cleaning chemistry throughout the bristle brush unit 200.
- the cleaning chemistry in the bristle brush unit 200 provides the lubrication to the substrate during the cleaning process.
- the bristle brush unit 200 works on the bevel polymer 103 deposited in the notch and backside edge of the substrate 100, cuts and releases the bevel polymer 103 from the edge and notch of the substrate 100.
- the released bevel polymer, cleaning chemistry and other particles are removed by the upper drainage channel 401 and lower drainage channel 303 provided within the system.
- the substrate 100 is then subjected to cleaning using a porous polyurethane impregnated polyester polishing pads such as commercially available SUBA pads from Rodel, Inc.
- a porous polyurethane impregnated polyester polishing pads such as commercially available SUBA pads from Rodel, Inc.
- the porosity of the polishing pad enables distribution of cleaning chemistry such as Ammonium Hydroxide throughout the polishing pad.
- the cleaning chemistry provides the lubrication to the surface of the substrate during the cleaning process and further helps in breaking down the bevel polymer 103 deposited along the edge of the substrate.
- the final step in this cleaning cycle is to remove the chemicals and particles, including bevel polymers 103, released during the cleaning process.
- the chemicals and particles are removed from the surface of the substrate using the confinement step.
- the chemicals and particles are confined to the underside and. edge of the substrate and removed as soon as they are released using an upper drainage channel 401 and lower drainage channel 303 each connected to an external vacuum source.
- the vacuum source helps in suctioning the chemicals and particles.
- the top surface of the substrate is kept dry. The strength of vacuum source can be adjusted depending on the cleaning requirements and on the chemicals and particles released during the cleaning process.
- a barrier such as gaseous nitrogen or de-ionized water, or a liquid meniscus is introduced to the immediate top surface of the substrate. This acts as a curtain and prevents the chemicals and particles released during the cleaning process from making their way to the top surface of the substrate 100. At the end of this cleaning cycle, the substrate 100 is substantially clean.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020087026974A KR101379570B1 (en) | 2006-05-05 | 2007-05-04 | Method and apparatus for isolated bevel edge clean |
| CN2007800160564A CN101437630B (en) | 2006-05-05 | 2007-05-04 | Apparatus for isolated bevel edge clean and method for using the same |
| JP2009509760A JP5145328B2 (en) | 2006-05-05 | 2007-05-04 | Apparatus for cleaning part of edge of semiconductor substrate, cleaning system and method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/429,574 | 2006-05-05 | ||
| US11/429,574 US8127395B2 (en) | 2006-05-05 | 2006-05-05 | Apparatus for isolated bevel edge clean and method for using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2007130630A2 true WO2007130630A2 (en) | 2007-11-15 |
| WO2007130630A3 WO2007130630A3 (en) | 2008-12-31 |
Family
ID=38668356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2007/010929 Ceased WO2007130630A2 (en) | 2006-05-05 | 2007-05-04 | Method and apparatus for isolated bevel edge clean |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8127395B2 (en) |
| JP (1) | JP5145328B2 (en) |
| KR (1) | KR101379570B1 (en) |
| CN (1) | CN101437630B (en) |
| MY (1) | MY149595A (en) |
| TW (1) | TWI343843B (en) |
| WO (1) | WO2007130630A2 (en) |
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| JP2009130122A (en) * | 2007-11-22 | 2009-06-11 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
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- 2007-05-04 KR KR1020087026974A patent/KR101379570B1/en not_active Expired - Fee Related
- 2007-05-04 MY MYPI20084358A patent/MY149595A/en unknown
- 2007-05-04 WO PCT/US2007/010929 patent/WO2007130630A2/en not_active Ceased
- 2007-05-04 JP JP2009509760A patent/JP5145328B2/en not_active Expired - Fee Related
- 2007-05-04 TW TW096115896A patent/TWI343843B/en not_active IP Right Cessation
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2012
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009130122A (en) * | 2007-11-22 | 2009-06-11 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and substrate processing method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101379570B1 (en) | 2014-03-31 |
| TWI343843B (en) | 2011-06-21 |
| CN101437630B (en) | 2013-03-20 |
| JP5145328B2 (en) | 2013-02-13 |
| TW200822978A (en) | 2008-06-01 |
| US20120118320A1 (en) | 2012-05-17 |
| CN101437630A (en) | 2009-05-20 |
| MY149595A (en) | 2013-09-13 |
| US8127395B2 (en) | 2012-03-06 |
| KR20090009227A (en) | 2009-01-22 |
| WO2007130630A3 (en) | 2008-12-31 |
| US20090113656A1 (en) | 2009-05-07 |
| JP2009536457A (en) | 2009-10-08 |
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