WO2007129847A1 - Chip-type led package and light emitting apparatus having the same - Google Patents

Chip-type led package and light emitting apparatus having the same Download PDF

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Publication number
WO2007129847A1
WO2007129847A1 PCT/KR2007/002229 KR2007002229W WO2007129847A1 WO 2007129847 A1 WO2007129847 A1 WO 2007129847A1 KR 2007002229 W KR2007002229 W KR 2007002229W WO 2007129847 A1 WO2007129847 A1 WO 2007129847A1
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WO
WIPO (PCT)
Prior art keywords
chip
molding portion
led package
type led
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2007/002229
Other languages
French (fr)
Inventor
Yeo Jin Yoon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Semiconductor Co Ltd
Original Assignee
Seoul Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Priority to US12/298,238 priority Critical patent/US7999276B2/en
Publication of WO2007129847A1 publication Critical patent/WO2007129847A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present invention relates to a light emitting diode (LED) package and a light emitting apparatus having the same, and more particularly, to a chip-type LED package and a light emitting apparatus having the same.
  • LED light emitting diode
  • a chip-type LED package includes an LED chip mounted on a printed circuit board (PCB) and a molding portion covering the LED chip.
  • the molding portion contains a phosphor to convert the wavelength of light emitted from the LED chip.
  • the LED chip may be a gallium nitride-based compound semiconductor capable of emitting ultraviolet or blue light, and the phosphor converts the ultraviolet or blue light into light with another color. Accordingly, it is possible to implement light with various colors, particularly white light, by combining the LED chip with the phosphor.
  • this chip-type LED package has a very simple structure, a manufacturing process is simplified and it is possible to mass-produce light, thin, simple and small products. Accordingly, the chip-type LED package is widely used for various application products that require small light sources, for example, as a backlight source for a liquid crystal display (LCD) of a mobile communication terminal.
  • LCD liquid crystal display
  • the molding portion containing the phosphor is formed by dotting or casting a liquid epoxy resin containing the phosphor onto a PCB.
  • an inorganic phosphor has relatively greater specific gravity than the liquid epoxy resin, the phosphor precipitates within the liquid epoxy resin. Accordingly, since the phosphor is irregularly dispersed within the molding portion, it is not possible to provide an LED package with uniform luminance.
  • Korean Patent No. 10-0348377 discloses a method of manufacturing a chip-type LED package having a molding portion with a phosphor uniformly dispersed therein.
  • Fig. 1 is a sectional view illustrating the method of manufacturing a chip-type LED package disclosed in the Korean patent.
  • an LED chip 3 is mounted on a PCB 6 with lead electrodes 7 printed thereon.
  • the LED chip 3 is mounted on and electrically connected to any one of the lead electrodes 7 using a conductive adhesive 4 and is also electrically connected to the other of the lead electrodes 7 by means of a bonding wire 5.
  • a molding portion 1 containing a phosphor 2 covers the LED chip 3.
  • the molding portion 1 is formed by making a tablet out of a mixture of the phosphor 2 and solid resin powder and subsequently performing transfer molding using the tablet.
  • the molding portion is formed by curing a resin within a short period of time at a temperature relatively higher than a general curing temperature.
  • the molding portion 1 has relatively higher hardness so as to protect the
  • the molding portion 1 covering the LED chip has relatively higher hardness, the molding portion 1 may be deformed due to thermal stress generated during operation of the LED chip.
  • the deformation of the molding portion 1 causes variations in light emitting luminance and also causes separation of the molding portion 1 from the PCB 6, thereby shortening the life span of the LED package.
  • An object of the present invention is to provide a chip-type LED package in which it is possible to prevent device failure due to thermal deformation of a molding portion, and a light emitting apparatus having the same.
  • Another object of the present invention is to provide a chip-type LED package having a uniform luminance characteristic, and a light emitting apparatus having the same.
  • a further object of the present invention is to provide a chip-type LED package in which a power chip operating at a high current can be mounted and operated, and a light emitting apparatus having the same.
  • an aspect of the present invention provides a chip- type LED package.
  • the chip-type LED package includes a thermally conductive substrate with lead electrodes formed thereon.
  • An LED chip is mounted on the thermally conductive substrate, and a lower molding portion covers the LED chip.
  • an upper molding portion having hardness higher than that of the lower molding portion covers the lower molding portion.
  • the upper molding portion is formed by performing transfer molding using resin powder. Accordingly, since the lower molding portion can be formed of a resin having hardness smaller than that of the upper molding portion, it is possible to prevent deterioration of a device due to thermal deformation of the molding portion.
  • the upper molding portion may be formed by performing the transfer molding using a mixture of resin powder and phosphor, so that the upper molding portion can contain the phosphor uniformly dispersed therein. Accordingly, it is possible to provide a chip-type LED package representing uniform luminance.
  • the thermally conductive substrate transfers heat generated from the LED chip to the outside, thereby promoting heat dissipation.
  • the thermally conductive substrate may be a metal core printed circuit board (MCPCB) or a ceramic substrate.
  • the ceramic may be, for example, alumina (Al O ), silicon carbide (SiC) or aluminum nitride (AlN).
  • the lower molding portion is not needed to contain a phosphor with specific gravity larger than that of a resin.
  • the lower molding portion may be formed by dotting a liquid resin, for example, a silicone resin.
  • an intermediate molding portion may be interposed between the lower and upper molding portions.
  • the intermediate molding portion preferably has the same shape as the upper molding portion.
  • the upper molding portion is formed to have a generally uniform thickness on the intermediate molding portion. Accordingly, the lengths of optical paths passing through the upper molding portion become substantially identical with one another, thereby improving luminance uniformity.
  • the intermediate molding portion may be formed by performing transfer molding using resin powder.
  • Another aspect of the present invention provides a light emitting apparatus having the chip-type LED package.
  • the light emitting apparatus includes a heat-sink slug.
  • the chip-type LED package is mounted on the heat-sink slug. Accordingly, heat dissipation from the LED package is promoted through the heat-sink slug.
  • the heat-sink slug may have a recess, and the thermally conductive substrate of the chip-type LED package is mounted in the recess.
  • the recess determines a mounting position of the chip-type LED package, and also fixes the chip-type LED package.
  • Fig. 1 is a sectional view showing a conventional chip-type LED package.
  • Fig. 2 is a sectional view showing a chip-type LED package according to an embodiment of the present invention.
  • Fig. 3 is a sectional view showing a chip-type LED package according to another embodiment of the present invention.
  • FIG. 4 is a sectional view showing a light emitting apparatus having the chip-type
  • Fig. 2 is a sectional view showing a chip-type LED package 20 according to an embodiment of the present invention.
  • the chip-type LED package 20 includes a thermally conductive substrate 21 with lead electrodes 23a and 23b formed thereon.
  • the thermally conductive substrate 21 may be a metal core printed circuit board (MCPCB) or a ceramic substrate.
  • the ceramic may be, for example, alumina (Al O ), silicon carbide (SiC) or aluminum nitride (AlN).
  • the lead electrodes 23a and 23b are formed on an upper surface of the substrate 21 and may extend in various manners depending on uses thereof. For example, the lead electrodes 23a and 23b may extend to a lower surface of the substrate 21 as shown in Fig. 2 so that they can be surface-mounted.
  • An LED chip 25 is mounted on the thermally conductive substrate 21.
  • the LED chip 25 is bonded to the lead electrode 23a by means of a conductive adhesive (not shown) and electrically connected to the lead electrode 23b by means of a bonding wire.
  • the LED chip 25 represents a 1-bond die having an electrode on each of upper and lower surfaces thereof.
  • the LED chip 25 may be a 2-bond die having two electrodes on an upper surface thereof.
  • the electrodes are electrically connected to the lead electrodes 23a and 23b by means of bonding wires.
  • the LED chip 25 may be a flip chip having bumps. In this case, the LED chip may be flip-bonded to the lead electrodes 23a and 23b using the bumps.
  • a lower molding portion 27 covers the LED chip 25.
  • the lower molding portion 27 may be formed by dotting a silicone resin.
  • the silicone resin preferably does not contain a phosphor.
  • the lower molding portion has relatively low hardness and thus absorbs thermal stress caused by heat generated from the LED chip 25. Accordingly, the lower molding portion 27 is prevented from being separated from the LED chip 25 or the substrate 21.
  • the upper molding portion 29 may be formed by performing transfer molding using resin powder. That is, a tablet is made using the resin powder, and the transfer molding is performed using the tablet, thereby forming the upper molding portion 29. At this time, the transfer molding may be performed using a mixture of resin powder and phosphor to form the upper molding portion 29. Accordingly, there is provided a chip- type LED package having uniform luminance, wherein the upper molding portion 29 containing the phosphor uniformly dispersed therein is formed.
  • Fig. 3 is a sectional view showing a chip-type LED package 30 according to another embodiment of the present invention.
  • the chip-type LED package 30 is substantially identical with the chip-type LED package 20 of Fig. 2. Thus, the following description will be made in connection with differences therebetween.
  • an intermediate molding portion 31 is interposed between an upper molding portion 33 and a lower molding portion 27. That is, the intermediate molding portion 31 covers the lower molding portion 27, and the upper molding portion 33 covers the intermediate molding portion 31.
  • the intermediate molding portion 31 may be formed by performing transfer molding using resin powder, and the upper molding portion 33 may be formed in the same manner as the upper molding portion 29 of Fig. 2.
  • the intermediate molding portion 31 may have the generally same shape as the upper molding portion 33 but preferably does not contain a phosphor.
  • the upper molding portion 33 is formed to have a substantially uniform thickness on the intermediate molding portion 31.
  • the lengths of optical paths of light that is generated from the LED chip 25 and passes through the upper molding portion 33 become substantially identical with one another regardless of positions in the upper molding portion 33.
  • the wavelength of light can be more uniformly converted due to the phosphor, so that the luminance uniformity of the chip-type LED package 30 is more improved.
  • Fig. 4 is a sectional view showing a light emitting apparatus 40 having the chip-type
  • the heat-sink slug 35 may be made of a material with high thermal conductivity, for example, metal.
  • the heat-sink slug 35 is made of a conductive material such as metal
  • at least one of the lead electrodes 23a and 23b of the chip-type LED package 30 is insulated from the heat-sink slug 35.
  • the lead electrodes 23a and 23b may be defined on the substrate 21, as shown in Fig. 4.
  • the heat-sink slug 35 may have a recess, and the thermally conductive substrate 21 may be engaged with the recess of the heat-sink slug 35 as shown in the figure.
  • the recess facilitates alignment of the chip-type LED package 30 and also fixes the chip-type LED package 30.
  • the lead terminals and the lead electrodes 23a and 23b may be electrically connected to each other in various manners, for example, by means of bonding wires (not shown) or welding.
  • a power-type LED package with an LED chip mounted on a heat sink is generally on the market, it is difficult to provide a molding portion with a phosphor uniformly dispersed therein since such an LED package is difficult to form the molding portion by means of transfer molding.
  • the chip-type LED package 30 is mounted on the heat-sink slug 35 in this embodiment, it is possible to provide a molding portion with a phosphor uniformly dispersed therein by means of the transfer molding technique. Accordingly, it is possible to provide a light emitting apparatus with improved luminance uniformity.

Landscapes

  • Led Device Packages (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)

Abstract

Disclosed are a chip-type LED package and a light emitting apparatus having the same. The chip-type LED package includes a thermally conductive substrate with lead electrodes formed thereon. An LED chip is mounted on the thermally conductive substrate, and a lower molding portion covers the LED chip. In addition, an upper molding portion having hardness higher than that of the lower molding portion covers the lower molding portion. The upper molding portion is formed by performing transfer molding using resin powder. Accordingly, since the lower molding portion can be formed of a resin having hardness smaller than that of the upper molding portion, it is possible to provide a chip-type LED package in which device failure due to thermal deformation of the molding portion can be prevented.

Description

Description
CHIP-TYPE LED PACKAGE AND LIGHT EMITTING APPARATUS HAVING THE SAME
Technical Field
[1] The present invention relates to a light emitting diode (LED) package and a light emitting apparatus having the same, and more particularly, to a chip-type LED package and a light emitting apparatus having the same. Background Art
[2] Generally, a chip-type LED package includes an LED chip mounted on a printed circuit board (PCB) and a molding portion covering the LED chip. The molding portion contains a phosphor to convert the wavelength of light emitted from the LED chip. For example, the LED chip may be a gallium nitride-based compound semiconductor capable of emitting ultraviolet or blue light, and the phosphor converts the ultraviolet or blue light into light with another color. Accordingly, it is possible to implement light with various colors, particularly white light, by combining the LED chip with the phosphor.
[3] Since this chip-type LED package has a very simple structure, a manufacturing process is simplified and it is possible to mass-produce light, thin, simple and small products. Accordingly, the chip-type LED package is widely used for various application products that require small light sources, for example, as a backlight source for a liquid crystal display (LCD) of a mobile communication terminal.
[4] Conventionally, the molding portion containing the phosphor is formed by dotting or casting a liquid epoxy resin containing the phosphor onto a PCB. However, since an inorganic phosphor has relatively greater specific gravity than the liquid epoxy resin, the phosphor precipitates within the liquid epoxy resin. Accordingly, since the phosphor is irregularly dispersed within the molding portion, it is not possible to provide an LED package with uniform luminance.
[5] Meanwhile, Korean Patent No. 10-0348377 discloses a method of manufacturing a chip-type LED package having a molding portion with a phosphor uniformly dispersed therein. Fig. 1 is a sectional view illustrating the method of manufacturing a chip-type LED package disclosed in the Korean patent.
[6] Referring to Fig. 1, an LED chip 3 is mounted on a PCB 6 with lead electrodes 7 printed thereon. The LED chip 3 is mounted on and electrically connected to any one of the lead electrodes 7 using a conductive adhesive 4 and is also electrically connected to the other of the lead electrodes 7 by means of a bonding wire 5.
[7] Meanwhile, a molding portion 1 containing a phosphor 2 covers the LED chip 3. The molding portion 1 is formed by making a tablet out of a mixture of the phosphor 2 and solid resin powder and subsequently performing transfer molding using the tablet. In the transfer molding, the molding portion is formed by curing a resin within a short period of time at a temperature relatively higher than a general curing temperature. Thus, it is possible to prevent precipitation of the phosphor 2 within the molding portion 1 due to a difference in specific gravity, resulting in the molding portion 1 with the phosphor 2 uniformly dispersed therein. Accordingly, it is possible to provide a chip-type LED package having uniform luminance due to the molding portion 1 with the phosphor 2 uniformly dispersed therein.
[8] However, the molding portion 1 has relatively higher hardness so as to protect the
LED chip against external environments such as an external force. In the case where the molding portion 1 covering the LED chip has relatively higher hardness, the molding portion 1 may be deformed due to thermal stress generated during operation of the LED chip. The deformation of the molding portion 1 causes variations in light emitting luminance and also causes separation of the molding portion 1 from the PCB 6, thereby shortening the life span of the LED package.
[9] Furthermore, in order to meet development of color realization and demand for enhancement of brightness of an LCD, a chip-type LED package with high output power is required as a backlight source. To this end, it is necessary to use a chip-type LED package on which a power chip operating at a relatively significantly higher current such as about 35OmA compared with a conventional LED chip operating at about 2OmA is mounted. However, an increase of the operating current increases heat generation from the LED chip, and thus, the molding portion is more deformed. In addition, since a PCB made of glass epoxy with low thermal conductivity cannot rapidly dissipate heat generated from the LED chip, the thermal deformation of the molding portion is further promoted. Disclosure of Invention Technical Problem
[10] An object of the present invention is to provide a chip-type LED package in which it is possible to prevent device failure due to thermal deformation of a molding portion, and a light emitting apparatus having the same.
[11] Another object of the present invention is to provide a chip-type LED package having a uniform luminance characteristic, and a light emitting apparatus having the same.
[12] A further object of the present invention is to provide a chip-type LED package in which a power chip operating at a high current can be mounted and operated, and a light emitting apparatus having the same. Technical Solution
[13] In order to achieve these objects, an aspect of the present invention provides a chip- type LED package. The chip-type LED package includes a thermally conductive substrate with lead electrodes formed thereon. An LED chip is mounted on the thermally conductive substrate, and a lower molding portion covers the LED chip. In addition, an upper molding portion having hardness higher than that of the lower molding portion covers the lower molding portion. The upper molding portion is formed by performing transfer molding using resin powder. Accordingly, since the lower molding portion can be formed of a resin having hardness smaller than that of the upper molding portion, it is possible to prevent deterioration of a device due to thermal deformation of the molding portion.
[14] Meanwhile, the upper molding portion may be formed by performing the transfer molding using a mixture of resin powder and phosphor, so that the upper molding portion can contain the phosphor uniformly dispersed therein. Accordingly, it is possible to provide a chip-type LED package representing uniform luminance.
[15] In the meantime, the thermally conductive substrate transfers heat generated from the LED chip to the outside, thereby promoting heat dissipation. The thermally conductive substrate may be a metal core printed circuit board (MCPCB) or a ceramic substrate. The ceramic may be, for example, alumina (Al O ), silicon carbide (SiC) or aluminum nitride (AlN).
[16] The lower molding portion is not needed to contain a phosphor with specific gravity larger than that of a resin. Thus, the lower molding portion may be formed by dotting a liquid resin, for example, a silicone resin.
[17] Meanwhile, an intermediate molding portion may be interposed between the lower and upper molding portions. The intermediate molding portion preferably has the same shape as the upper molding portion. As a result, the upper molding portion is formed to have a generally uniform thickness on the intermediate molding portion. Accordingly, the lengths of optical paths passing through the upper molding portion become substantially identical with one another, thereby improving luminance uniformity. The intermediate molding portion may be formed by performing transfer molding using resin powder.
[18] Another aspect of the present invention provides a light emitting apparatus having the chip-type LED package. The light emitting apparatus includes a heat-sink slug. The chip-type LED package is mounted on the heat-sink slug. Accordingly, heat dissipation from the LED package is promoted through the heat-sink slug.
[19] The heat-sink slug may have a recess, and the thermally conductive substrate of the chip-type LED package is mounted in the recess. The recess determines a mounting position of the chip-type LED package, and also fixes the chip-type LED package.
Advantageous Effects
[20] According to the present invention, it is possible to provide a chip-type LED package which has a uniform luminance characteristic and in which device failure due to thermal deformation of a molding portion can be prevented, and a light emitting apparatus having the same. In addition, it is possible to provide a chip-type LED package in which a power chip operating at a high current can be mounted and operated, and a light emitting apparatus having the same. Brief Description of the Drawings
[21] Fig. 1 is a sectional view showing a conventional chip-type LED package.
[22] Fig. 2 is a sectional view showing a chip-type LED package according to an embodiment of the present invention.
[23] Fig. 3 is a sectional view showing a chip-type LED package according to another embodiment of the present invention.
[24] Fig. 4 is a sectional view showing a light emitting apparatus having the chip-type
LED package according to an embodiment of the present invention. Best Mode for Carrying Out the Invention
[25] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided only for illustrative purposes to fully convey the scope of the present invention to those skilled in the art. Therefore, the present invention is not limited to the embodiments set forth herein but can be implemented in different forms. In the drawings, the widths, lengths, thicknesses and the like of components may be exaggerated for convenience of illustration. Like reference numerals indicate like elements throughout the specification.
[26] Fig. 2 is a sectional view showing a chip-type LED package 20 according to an embodiment of the present invention.
[27] Referring to Fig. 2, the chip-type LED package 20 includes a thermally conductive substrate 21 with lead electrodes 23a and 23b formed thereon. The thermally conductive substrate 21 may be a metal core printed circuit board (MCPCB) or a ceramic substrate. The ceramic may be, for example, alumina (Al O ), silicon carbide (SiC) or aluminum nitride (AlN). The lead electrodes 23a and 23b are formed on an upper surface of the substrate 21 and may extend in various manners depending on uses thereof. For example, the lead electrodes 23a and 23b may extend to a lower surface of the substrate 21 as shown in Fig. 2 so that they can be surface-mounted.
[28] An LED chip 25 is mounted on the thermally conductive substrate 21. The LED chip 25 is bonded to the lead electrode 23a by means of a conductive adhesive (not shown) and electrically connected to the lead electrode 23b by means of a bonding wire. Here, the LED chip 25 represents a 1-bond die having an electrode on each of upper and lower surfaces thereof. Alternatively, the LED chip 25 may be a 2-bond die having two electrodes on an upper surface thereof. In this case, the electrodes are electrically connected to the lead electrodes 23a and 23b by means of bonding wires. In addition, the LED chip 25 may be a flip chip having bumps. In this case, the LED chip may be flip-bonded to the lead electrodes 23a and 23b using the bumps.
[29] A lower molding portion 27 covers the LED chip 25. The lower molding portion 27 may be formed by dotting a silicone resin. At this time, the silicone resin preferably does not contain a phosphor. The lower molding portion has relatively low hardness and thus absorbs thermal stress caused by heat generated from the LED chip 25. Accordingly, the lower molding portion 27 is prevented from being separated from the LED chip 25 or the substrate 21.
[30] Meanwhile, an upper molding portion 29 covers the lower molding portion 27. The upper molding portion has hardness relatively higher than that of the lower molding portion 27, so that it protects the LED chip 25 from external environments such as an external force. The upper molding portion 29 may contain a phosphor for converting the wavelength of light emitted from the LED chip 25. The LED chip 25 and the phosphor are combined to implement various colors, for example, white light.
[31] The upper molding portion 29 may be formed by performing transfer molding using resin powder. That is, a tablet is made using the resin powder, and the transfer molding is performed using the tablet, thereby forming the upper molding portion 29. At this time, the transfer molding may be performed using a mixture of resin powder and phosphor to form the upper molding portion 29. Accordingly, there is provided a chip- type LED package having uniform luminance, wherein the upper molding portion 29 containing the phosphor uniformly dispersed therein is formed.
[32] Although it has been illustrated in this embodiment that the single LED chip 25 is mounted on the single substrate 21, the present invention is not limited thereto. A plurality of LED chips 25 may be mounted in an array on a single substrate 21. At this time, the lower molding portion 27 and the upper molding portion 29 may be formed to cover the plurality of LED chips 25, respectively.
[33] Fig. 3 is a sectional view showing a chip-type LED package 30 according to another embodiment of the present invention.
[34] Referring to Fig. 3, the chip-type LED package 30 is substantially identical with the chip-type LED package 20 of Fig. 2. Thus, the following description will be made in connection with differences therebetween.
[35] In this embodiment, an intermediate molding portion 31 is interposed between an upper molding portion 33 and a lower molding portion 27. That is, the intermediate molding portion 31 covers the lower molding portion 27, and the upper molding portion 33 covers the intermediate molding portion 31. The intermediate molding portion 31 may be formed by performing transfer molding using resin powder, and the upper molding portion 33 may be formed in the same manner as the upper molding portion 29 of Fig. 2.
[36] The intermediate molding portion 31 may have the generally same shape as the upper molding portion 33 but preferably does not contain a phosphor. The upper molding portion 33 is formed to have a substantially uniform thickness on the intermediate molding portion 31. As a result, the lengths of optical paths of light that is generated from the LED chip 25 and passes through the upper molding portion 33 become substantially identical with one another regardless of positions in the upper molding portion 33. Thus, in a case where the upper molding portion 33 contains a phosphor, the wavelength of light can be more uniformly converted due to the phosphor, so that the luminance uniformity of the chip-type LED package 30 is more improved.
[37] Fig. 4 is a sectional view showing a light emitting apparatus 40 having the chip-type
LED package of the present invention.
[38] The light emitting apparatus 40 has the chip-type LED package 20 or 30 described with reference to Fig. 2 or 3. Here, the following description will be made in connection with the light emitting apparatus 40 having the chip-type LED package 30 of Fig. 3.
[39] The chip-type LED package 30 is mounted on a heat-sink slug 35. The thermally conductive substrate 21 of the chip-type LED package 30 is mounted on the heat-sink slug 35. At this time, the thermally conductive substrate 21 may be bonded to the heat- sink slug 35 by means of a thermally conductive adhesive (not shown).
[40] The heat-sink slug 35 may be made of a material with high thermal conductivity, for example, metal. In the case where the heat-sink slug 35 is made of a conductive material such as metal, at least one of the lead electrodes 23a and 23b of the chip-type LED package 30 is insulated from the heat-sink slug 35. To this end, the lead electrodes 23a and 23b may be defined on the substrate 21, as shown in Fig. 4.
[41] Meanwhile, the heat-sink slug 35 may have a recess, and the thermally conductive substrate 21 may be engaged with the recess of the heat-sink slug 35 as shown in the figure. The recess facilitates alignment of the chip-type LED package 30 and also fixes the chip-type LED package 30.
[42] Meanwhile, lead terminals (not shown) for connecting the lead electrodes 23a and
23b to an external power source may be provided, and the lead terminals and the lead electrodes 23a and 23b may be electrically connected to each other in various manners, for example, by means of bonding wires (not shown) or welding. [43] Although a power-type LED package with an LED chip mounted on a heat sink is generally on the market, it is difficult to provide a molding portion with a phosphor uniformly dispersed therein since such an LED package is difficult to form the molding portion by means of transfer molding. However, since the chip-type LED package 30 is mounted on the heat-sink slug 35 in this embodiment, it is possible to provide a molding portion with a phosphor uniformly dispersed therein by means of the transfer molding technique. Accordingly, it is possible to provide a light emitting apparatus with improved luminance uniformity.

Claims

Claims
[1] A chip-type light emitting diode (LED) package, comprising: a thermally conductive substrate with lead electrodes formed thereon; an LED chip mounted on the thermally conductive substrate; a lower molding portion covering the LED chip; and an upper molding portion covering the lower molding portion, the upper molding portion having hardness higher than that of the lower molding portion and being formed by performing transfer molding using resin powder.
[2] The chip-type LED package as claimed in claim 1, wherein the thermally conductive substrate is a metal core printed circuit board (MCPCB) or a ceramic substrate.
[3] The chip-type LED package as claimed in claim 1, wherein the upper molding portion is formed by performing the transfer molding using a mixture of resin powder and phosphor, so that the upper molding portion contains the phosphor uniformly dispersed therein.
[4] The chip-type LED package as claimed in claim 1, wherein the lower molding portion is formed by dotting a silicone resin.
[5] The chip-type LED package as claimed in claim 1, further comprising an intermediate molding portion interposed between the lower and upper molding portions and having the same shape as the upper molding portion.
[6] The chip-type LED package as claimed in claim 5, wherein the intermediate molding portion is formed by performing transfer molding using resin powder.
[7] A light emitting apparatus, comprising: a heat- sink slug; and a chip-type LED package according to any one of claims 1 to 6, the chip-type LED package being mounted on the heat-sink slug.
[8] The light emitting apparatus as claimed in claim 7, wherein the heat-sink slug has a recess, and the thermally conductive substrate of the chip-type LED package is mounted in the recess.
PCT/KR2007/002229 2006-05-08 2007-05-07 Chip-type led package and light emitting apparatus having the same Ceased WO2007129847A1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110031523A1 (en) * 2008-04-17 2011-02-10 Kabushiki Kaisha Toshiba White light emitting device, backlight, liquid crystal display device, and illuminating device
CN101981715A (en) * 2008-07-21 2011-02-23 Lg伊诺特有限公司 Light-emitting diode and manufacturing method thereof, light-emitting device and manufacturing method thereof

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5543084B2 (en) * 2008-06-24 2014-07-09 ピーエスフォー ルクスコ エスエイアールエル Manufacturing method of semiconductor device
KR20120024104A (en) * 2010-09-06 2012-03-14 서울옵토디바이스주식회사 Light emitting element
KR101725220B1 (en) 2010-12-22 2017-04-10 삼성전자 주식회사 Method of depositing phosphor on semiconductor light emitting device and an apparatus for depositing phosphor on semiconductor light emitting device
WO2018179538A1 (en) * 2017-03-29 2018-10-04 株式会社村田製作所 Power module and method for manufacturing power module
DE102017211727A1 (en) * 2017-07-10 2019-01-10 Tridonic Jennersdorf Gmbh Bonded LED chips in a polymer matrix
US10680147B2 (en) 2017-11-24 2020-06-09 Osram Oled Gmbh Method of producing a lighting device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001111115A (en) * 1999-10-12 2001-04-20 Rohm Co Ltd Semiconductor light emitting device
US6741029B2 (en) * 2001-03-30 2004-05-25 Sumitomo Electric Industries, Ltd. Light emission apparatus and method of fabricating the same
KR20050029384A (en) * 2003-09-22 2005-03-28 엘지이노텍 주식회사 Light emitting diode package and method for manufacturing light emitting diode package
KR20060004569A (en) * 2004-07-09 2006-01-12 서울반도체 주식회사 LED package having integrated heat sink and method for manufacturing same

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6962829B2 (en) * 1996-10-31 2005-11-08 Amkor Technology, Inc. Method of making near chip size integrated circuit package
US6217886B1 (en) * 1997-07-14 2001-04-17 The Board Of Trustees Of The University Of Illinois Materials and methods for making improved micelle compositions
JP3674333B2 (en) * 1998-09-11 2005-07-20 株式会社日立製作所 Power semiconductor module and electric motor drive system using the same
KR100302593B1 (en) * 1998-10-24 2001-09-22 김영환 Semiconductor package and fabricating method thereof
KR100348377B1 (en) 2000-07-28 2002-08-10 이정훈 Method for Manufacturing White Light-emitting Diode
JP3683179B2 (en) * 2000-12-26 2005-08-17 松下電器産業株式会社 Semiconductor device and manufacturing method thereof
US6686676B2 (en) * 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
US6719446B2 (en) * 2001-08-24 2004-04-13 Densen Cao Semiconductor light source for providing visible light to illuminate a physical space
JP3749243B2 (en) * 2001-09-03 2006-02-22 松下電器産業株式会社 Semiconductor light emitting device, light emitting apparatus, and method for manufacturing semiconductor light emitting device
MY149573A (en) * 2002-10-16 2013-09-13 Nichia Corp Oxynitride phosphor and production process thereof, and light-emitting device using oxynitride phosphor
KR20040044701A (en) * 2002-11-21 2004-05-31 삼성전기주식회사 A light emitting device package and a method of manufacturing the same
US6922024B2 (en) * 2002-11-25 2005-07-26 Matsushita Electric Industrial Co., Ltd. LED lamp
US7129577B2 (en) * 2003-02-27 2006-10-31 Power-One, Inc. Power supply packaging system
US6853064B2 (en) * 2003-05-12 2005-02-08 Micron Technology, Inc. Semiconductor component having stacked, encapsulated dice
JP4138586B2 (en) * 2003-06-13 2008-08-27 スタンレー電気株式会社 LED lamp for light source and vehicle headlamp using the same
US7029935B2 (en) * 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
JP2005197369A (en) * 2004-01-05 2005-07-21 Toshiba Corp Optical semiconductor device
JP2005252219A (en) * 2004-02-06 2005-09-15 Toyoda Gosei Co Ltd Light emitting device and sealing member
JP2005286312A (en) * 2004-03-02 2005-10-13 Fujikura Ltd LIGHT EMITTING DEVICE AND LIGHTING DEVICE
US7517728B2 (en) * 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
WO2005103199A1 (en) * 2004-04-27 2005-11-03 Matsushita Electric Industrial Co., Ltd. Phosphor composition and method for producing the same, and light-emitting device using the same
US20050264194A1 (en) * 2004-05-25 2005-12-01 Ng Kee Y Mold compound with fluorescent material and a light-emitting device made therefrom
US7456499B2 (en) * 2004-06-04 2008-11-25 Cree, Inc. Power light emitting die package with reflecting lens and the method of making the same
US7145253B1 (en) * 2004-06-09 2006-12-05 Amkor Technology, Inc. Encapsulated sensor device
EP1794808B1 (en) * 2004-09-10 2017-08-09 Seoul Semiconductor Co., Ltd. Light emitting diode package having multiple molding resins
CN102660260B (en) * 2004-09-22 2015-09-30 独立行政法人物质·材料研究机构 Fluor and manufacture method thereof and light-emitting instrument
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
KR101115800B1 (en) * 2004-12-27 2012-03-08 엘지디스플레이 주식회사 Light-emitting device package, method for fabricating the same and backlight unit
US20070114562A1 (en) * 2005-11-22 2007-05-24 Gelcore, Llc Red and yellow phosphor-converted LEDs for signal applications
US7598606B2 (en) * 2005-02-22 2009-10-06 Stats Chippac Ltd. Integrated circuit package system with die and package combination
US7405433B2 (en) * 2005-02-22 2008-07-29 Avago Technologies Ecbu Ip Pte Ltd Semiconductor light emitting device
TWM280540U (en) * 2005-03-28 2005-11-11 Everlight Electronics Co Ltd LED assembly structure
TW200638558A (en) * 2005-04-29 2006-11-01 Teknowledge Dev Corp White light emitting diode device
JP2006310710A (en) * 2005-05-02 2006-11-09 Sony Corp Semiconductor light emitting device
US7365371B2 (en) * 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
US7847302B2 (en) * 2005-08-26 2010-12-07 Koninklijke Philips Electronics, N.V. Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature
KR100724591B1 (en) * 2005-09-30 2007-06-04 서울반도체 주식회사 Light emitting device and LED backlight including same
US8039849B2 (en) * 2005-11-23 2011-10-18 Taiwan Oasis Technology Co., Ltd. LED module
JP4417906B2 (en) * 2005-12-16 2010-02-17 株式会社東芝 Light emitting device and manufacturing method thereof
US7521728B2 (en) * 2006-01-20 2009-04-21 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed reflectors and methods of forming the same
US8969908B2 (en) * 2006-04-04 2015-03-03 Cree, Inc. Uniform emission LED package
US7317182B2 (en) * 2006-05-24 2008-01-08 3M Innovative Properties Company Backlight wedge with encapsulated light source
US7781783B2 (en) * 2007-02-07 2010-08-24 SemiLEDs Optoelectronics Co., Ltd. White light LED device
US7709853B2 (en) * 2007-02-12 2010-05-04 Cree, Inc. Packaged semiconductor light emitting devices having multiple optical elements

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001111115A (en) * 1999-10-12 2001-04-20 Rohm Co Ltd Semiconductor light emitting device
US6741029B2 (en) * 2001-03-30 2004-05-25 Sumitomo Electric Industries, Ltd. Light emission apparatus and method of fabricating the same
KR20050029384A (en) * 2003-09-22 2005-03-28 엘지이노텍 주식회사 Light emitting diode package and method for manufacturing light emitting diode package
KR20060004569A (en) * 2004-07-09 2006-01-12 서울반도체 주식회사 LED package having integrated heat sink and method for manufacturing same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110031523A1 (en) * 2008-04-17 2011-02-10 Kabushiki Kaisha Toshiba White light emitting device, backlight, liquid crystal display device, and illuminating device
US8598618B2 (en) * 2008-04-17 2013-12-03 Kabushiki Kaisha Toshiba White light emitting device, backlight, liquid crystal display device, and illuminating device
CN101981715A (en) * 2008-07-21 2011-02-23 Lg伊诺特有限公司 Light-emitting diode and manufacturing method thereof, light-emitting device and manufacturing method thereof
US8823028B2 (en) 2008-07-21 2014-09-02 Lg Innotek Co., Ltd. Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device
CN101981715B (en) * 2008-07-21 2015-09-16 Lg伊诺特有限公司 Light-emitting diode and manufacturing method thereof, light-emitting device and manufacturing method thereof
CN105185887A (en) * 2008-07-21 2015-12-23 Lg伊诺特有限公司 Light Emitting Diode And Method Of Manufacturing The Same, And Light Emitting Device And Method Of Manufacturing The Light Emitting Device.
US9680064B2 (en) 2008-07-21 2017-06-13 Lg Innotek Co., Ltd. Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device
CN105185887B (en) * 2008-07-21 2019-06-25 Lg伊诺特有限公司 Light-emitting diode and its manufacturing method and light-emitting device and its manufacturing method

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TWI415291B (en) 2013-11-11
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US20090200567A1 (en) 2009-08-13
TW200746482A (en) 2007-12-16

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