WO2007117519A2 - Procédé de calcul des paramètres de déformation pour un dispositif tracé dans un système lithographique - Google Patents

Procédé de calcul des paramètres de déformation pour un dispositif tracé dans un système lithographique Download PDF

Info

Publication number
WO2007117519A2
WO2007117519A2 PCT/US2007/008423 US2007008423W WO2007117519A2 WO 2007117519 A2 WO2007117519 A2 WO 2007117519A2 US 2007008423 W US2007008423 W US 2007008423W WO 2007117519 A2 WO2007117519 A2 WO 2007117519A2
Authority
WO
WIPO (PCT)
Prior art keywords
patterned device
forces
pattern
features
substrate
Prior art date
Application number
PCT/US2007/008423
Other languages
English (en)
Other versions
WO2007117519A3 (fr
Inventor
Anshuman Cherala
Sidlgata V. Sreenivasan
Byung-Jin Choi
Ecron Thompson
Original Assignee
Molecular Imprints, Inc.
Board Of Regents - The University Of Texas System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Molecular Imprints, Inc., Board Of Regents - The University Of Texas System filed Critical Molecular Imprints, Inc.
Publication of WO2007117519A2 publication Critical patent/WO2007117519A2/fr
Publication of WO2007117519A3 publication Critical patent/WO2007117519A3/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment

Definitions

  • Nano-fabrication involves the fabrication of very small structures, e.g., having features on the order of nanometers or smaller.
  • One area in which nano- fabrication has had a sizeable impact is in the processing of integrated circuits.
  • nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed.
  • Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
  • An exemplary nano-fabrication technique is commonly referred to as imprint lithography.
  • Exemplary imprint lithography processes are described in detail in numerous publications, such as United States patent application publication 2004/0065976 filed as United States patent application 10/264,960, entitled, “Method and a Mold to Arrange Features on a Substrate to Replicate Features having Minimal Dimensional Variability"; United States patent application publication 2004/0065252 filed as United States patent application 10/264,926, entitled “Method of Forming a Layer on a Substrate to Facilitate Fabrication of Metrology Standards"; and United States patent number 6,936,194, entitled “Functional Patterning Material for Imprint Lithography Processes,” all of which are assigned to the assignee of the present invention.
  • the imprint lithography technique disclosed in each of the aforementioned United States patent application publications and United States patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
  • the substrate may be positioned upon a stage to obtain a desired position to facilitate patterning thereof.
  • a mold is employed spaced-apart from the substrate with a formable liquid present between the mold and the substrate.
  • the liquid is solidified to form a patterned layer that has a pattern recorded therein that is conforming to a shape of the surface of the mold in contact with the liquid.
  • the mold is then separated from the patterned layer such that the mold and the substrate are spaced-apart.
  • the substrate and the patterned layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the patterned layer.
  • Fig. 1 is a simplified side view of a lithographic system having a template spaced- apart from a substrate;
  • Fig. 2 is a simplified side view of the substrate shown in Fig. 1, having a patterned layer positioned thereon;
  • Fig. 3 is a simplified plan view of a holder for the template, both shown in Fig. 1, in accordance with the present invention
  • Fig. 4 is a simplified plan view of the template shown in Fig. 1, having a plurality of alignment marks;
  • Fig. 5 is a simplified plan view showing distortion vectors determined in accordance with the present invention
  • Fig. 6 is a top down view of the template shown in Fig. 1
  • Fig. 7 is a side view of the template shown in Fig. 1
  • Fig. 8 is an exploded view of a portion of the template shown in Fig. 7.
  • Substrate 12 may be coupled to a substrate chuck 14.
  • Substrate chuck 14 may be any chuck including, but not limited to, vacuum, pin-type, groove-type, or electromagnetic, as described in United States patent 6,873,087 entitled "High- Precision Orientation Alignment and Gap Control Stages for Imprint Lithography Processes," which is incorporated herein by reference.
  • Substrate 12 and substrate chuck 14 may be supported upon a stage 16. Further, stage 16, substrate 12, and substrate chuck 14 may be positioned on a base (not shown). Stage 16 may provide motion about the x and y axes.
  • a template 18 Spaced-apart from substrate 12 is a template 18 having first and second opposed sides 20 and 22. Positioned on first side 20 of template 18 is a mesa 24 extending therefrom towards substrate 12 with a patterning surface 26 thereon. Further, mesa 24 may be referred to as a mold 24. Mesa 24 may also be referred to as a nanoimpr ⁇ nt mold 24. In a further embodiment, template 18 may be substantially absent of mold 24. Template 18 and/or mold 24 may be formed from such materials including but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, and hardened sapphire.
  • template 18 and mold 24 may be commonly referred to as patterned device 28.
  • patterning surface 24 comprises features defined by a plurality of spaced-apart recesses 30 and protrusions 32.
  • patterning surface 24 may be substantially smooth and/or planar. Patterning surface 24 may define an original pattern that forms the basis of a pattern to be formed on substrate 12.
  • Template 18 may be coupled to a template chuck (not shown), the template chuck (not shown) being any chuck including, but not limited to, vacuum, pin-type, groove-type, or electromagnetic, as described in United States patent 6,873,087 entitled "High-Precision Orientation Alignment and Gap Control Stages for Imprint Lithography Processes.”
  • Template 18 may be coupled to an imprint head 34 to facilitate movement of template 18 and mold 26.
  • the template chuck (not shown) may be coupled to imprint head 34 to facilitate movement of template 18 and mold 26.
  • System 10 further comprises a fluid dispense system 36. Fluid dispense system 36 may be in fluid communication with substrate 12 so as to deposit a polymeric material 38 thereon.
  • System 10 may comprise any number of fluid dispensers and fluid dispense system 36 may comprise a plurality of dispensing units therein.
  • Polymeric material 38 may be positioned upon substrate 12 using any known technique, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), thin film deposition, thick film deposition, and the like. As shown, polymeric material 38 may be deposited upon substrate 12 as a plurality of spaced-apart droplets 40. Typically, polymeric material 38 is disposed upon substrate 12 before the desired volume is defined between mold 24 and substrate 12. However, polymeric material 38 may fill the volume after the desired volume has been obtained.
  • system 10 further comprises a source 42 of energy 44 coupled to direct energy 44 along a path 46.
  • Imprint head 34 and stage 16 are configured to arrange mold 24 and substrate 12, respectively, to be in superimposition and disposed in path 46. Either imprint head 34, stage 16, or both vary a distance between mold 24 and substrate 12 to define a desired volume therebetween such that mold 24 contacts polymeric material 38 and the desired volume is filled by polymeric material 38. More specifically, polymeric material 38 of droplets 40 may ingress and fill recesses 30 of mold 24.
  • source 42 produces energy 44, e.g., broadband ultraviolet radiation that causes polymeric material 38 to solidify and/or cross-link conforming to the shape of a surface 48 of substrate 12 and patterning surface 26, defining a patterned layer 50 on substrate 12.
  • Patterned layer 50 may comprise a residual layer 52 and a plurality of features shown as protrusions 54 and recessions 56.
  • System 10 may be regulated by a processor 58 that is in data communication with stage 16, imprint head 34, fluid dispense system 36, and source 42, operating on a computer readable program stored in memory 60.
  • system 10 further comprises an actuator system 62 surrounding patterned device 28 to facilitate alignment and overlay registration.
  • actuation system 62 includes a plurality of actuators 64 coupled between a frame 66 and patterned device 20. Each of actuators 64 are arranged to facilitate generation of a force on one of the four sides 70, 72, 74 and 76 of patterned device 28.
  • actuator system 62 comprises sixteen actuators 64a-62p coupled to patterned device 20. More specifically, coupled to side 70 of template 18 are actuators 64a-64d; coupled to side 72 of template 18 are actuators 64e-64h; coupled to side 74 of template 18 are actuators 64i-641; and coupled to side 76 of template 18 are actuators 64m-64p.
  • template 18 may have any number of actuators 64 coupled thereto and may have differing number of actuators 64 coupled to each side of template 18. Template 18 may have any configuration and number of actuators 64 positioned on sides 70, 72, 74, and 76 thereof.
  • Actuation system 62 may be in data communication with processor 58, operating on a computer readable program stored in memory 60, to control an operation thereof, and more specifically, generate control signals that are transmitted to actuators 64 of actuation system 62.
  • Actuation system 62 facilitates alignment and overlay registration by selectively deforming patterned device 20. This facilitates correcting various parameters of the pattern shape, i.e., magnification characteristics, skew/orthogonality characteristics, and trapezoidal characteristics.
  • Magnification characteristics may be magnification error, such as where the overall pattern changes from a square shape to a rectangular shape.
  • Skew/orthogonality characteristics may be skew/orthogonality error where adjacent edges form an oblique or obtuse angle with respect to one another instead of an orthogonal angle.
  • Trapezoidal characteristics may be trapezoidal error where as in where a square/rectangular assumes the shape of a trapezium, with trapezium including a trapezoid.
  • patterned device 20 may be selectively deformed by actuators 64 to minimize, if not cancel, the distortions present, thereby reducing overlay errors.
  • patterned device 20 is inspected employing known image placement or image registration systems, e.g., LMS IPRO3 available from Leica Microsystems of Bannockburn, Illinois.
  • measured information 78 concerning the location of the features on patterned device 20 would be mapped into memory 60.
  • the features that measured information 78 represents are reference marks present on patterned device 20 to facilitate overlay and alignment techniques.
  • the features may include any known alignment mark, such as box-in-box; cross-in-cross and/or vernier scale marks, referred to as overlay features.
  • the overlay features are usually positioned at differing regions of patterned device 20 as room permits and are arranged in a polygonal, if not rectangular grid. As shown in Fig. 4, alignment marks 80 are positioned in the corners of mold 24.
  • Reference information 82 against which measured information 78 would be compared.
  • Reference information 82 would include information concerning an optimal, or desired, location of overlay features and, therefore, the pattern on patterned devices 20. This information may be obtained from an existing reference patterned device (not shown) that may be employed as a standard against which patterned device 20 is measured. Alternatively, reference information 82 may be obtained from a GDS file that is employed to form the pattern on patterned device 20. Considering that errors, or distortion, in the pattern on the patterned device 20 may be attributed to the writing and etch processes used to form patterned device 20, computer data of the type employed in computer aided design software may provide reference information 82 with the most accurate reflection of the optimal pattern. Exemplary computer data is that employed by CATSTM software sold by Synopsis, Inc., of Mountain View, California.
  • Routine 84 also stored in memory 60 is a routine 84 that facilitates comparison of measured information 78 with reference information 82.
  • Routine 84 includes X and Y positional variations between features in measured information 78 with respect to corresponding features in reference information 82 and generates image placement variation data shown in below in Table 1 :
  • Distortion vectors 86 are vectorized representations of the differences in spatial location of the overlay features associated with measured information 78 with respect to corresponding overlay features associated with reference information 82.
  • distortions vectors 86 comprise data 88, mapped into memory 60, concerning a set of spatial locations 90 of features of the pattern on patterned device 20.
  • An exemplary distortion vector 86 generated from image placement variation data would be mapped into memory as a series starting with feature 1 and ending with feature 36 as identifying the x and y variations of each of the features as follows: ⁇ 0.01, -0.012, 0, -0.003, . . .
  • Spatial locations 90 represent the spatial location of the overlay features on patterned device 20.
  • Data 88 includes directional and magnitude characteristics of the differences between measured information 78 and reference information 82. Specifically, data 88 includes information concerning the distance, along two orthogonal axes, between spatial locations 90 of each of the overlay features on patterned device 20 with respect to spatial locations of the corresponding overlay feature of the optimal/desired pattern.
  • actuator system 62 facilitates alignment and overlay registration by selectively deforming patterned device 20 by applying forces upon patterned device 20 by actuators 64. The forces upon patterned device 20 by actuators 64 must satisfy the following equilibrium and moment conditions:
  • Equation (1), (2), and (3) may be modeled as follows:
  • Matrix [K] may be determined by the spatial relationship between actuators 64 and patterned device 20.
  • [K] xl x2 xi x4 xS x6 x7 xS x9 xlO xll x ⁇ 2 xB xU x ⁇ S *16 y ⁇ yi yi j>4 y5 y ⁇ yl y% y9 j>10 y ⁇ y ⁇ 2 y ⁇ 3 >14 y ⁇ 5 yl6 (5) ml ml mi m4 mS m6 ml m& m9 mlO mil ml2 ml3 ml4 ml5 ml6
  • the matrix [K] may be defined as follows:
  • the force vector ⁇ f ⁇ is the forces associated with actuators 64.
  • the force vector ⁇ f ⁇ may be defined as follow:
  • the nullspace basis vectors may be determined.
  • the orthonormal basis of the matrix [K] may be determined using well-known linear algebraic methods and may be defined as follows:
  • each column of the matrix [nK] is an independent force vector and may referred to as ⁇ i, ⁇ 2 ,..., ⁇ n.
  • Force vectors ⁇ i, ⁇ 2 ,..., ⁇ i3 may be referred to as the nullspace basis vectors of equation (4). More specifically, the matrix [nK] may be defined as follows:
  • any force vector ⁇ f ⁇ may be defined as follow:
  • Ps 5 Pe, P7, ps, p9, pio, pn > P12, P13, Pw, P15, and pie are the scalar co-efficients of ⁇ j, ⁇ 2 , ⁇ 3 , ⁇ 4 , ⁇ s, ⁇ s, ⁇ 7 , ⁇ s, ⁇ 9, ⁇ io, ⁇ , ⁇ i 2 , ⁇ n, ⁇ , ⁇ is, and ⁇ i ⁇ » respectively.
  • processor 58 operates on routine
  • routine 84 determines the loads to be applied by actuators 64 in order to selectively deform patterned device 20 solving an inverse transform function as follows:
  • [A] represents the compliance matrix to be specified for patterned device 20
  • ⁇ p ⁇ comprises weighting coefficients for the force vectors ⁇ j, X 2 ,..., ⁇ i3,
  • ⁇ u ⁇ represents spatial translation of features associated with measured information 78 must undergo in order to match the spatial location of the corresponding feature in reference information 82, i.e., ⁇ u ⁇ represents an additive inverse of the distortion vectors 86.
  • FEA finite element analysis
  • n is an integer from 1 to 4 and i is an integer from 1 to 8.
  • An exemplary compliance matrix [A] based upon the conditions set forth in equations 1-3 and 12-13 for 4 overlay features is as follows:
  • routine 84 may determine the magnitude of the forces to be generated ⁇ f ⁇ by actuators by solving for ⁇ p ⁇ . Specifically, routine 84 solves the force vector ⁇ p ⁇ from equation (11) as follows:
  • equation (11) may be re forumulated as follows:
  • Routine 84 may minimize the error vector (e) over the infinity norm given by the following:
  • the reason for selecting to minimize the infinity norm is that it is believed that the magnitude of the absolute value of overlay error that determines a pattern layer's usefulness.
  • the maximum overlay error is believed to be less than l/3 vd the minimum feature size of the pattern, for the pattern layer to be functional.
  • routine 84 minimize this maximum absolute error, i.e., the infinity norm as follows:
  • Objective function (19) is convex piecewise linear in terms of the decision variables, i.e. p,-.
  • a convex piecewise linear function is, by definition, nonlinear. The domain of differences among the set may, therefore, include several local minima.
  • routine 84 may be required to undertake several iterations with a range of trial/guess starting vectors and to implement a directional search routine.
  • a typical iterative procedure in accordance with the present invention commences from an initial point where a function value is calculated. The procedure proceeds to solutions in which the function has lower values. This results in routine 48 computing information concerning the function until convergence is identified. Routine 48 ends the procedure at a minimum value where no further reduction in the functional value is identified within the tolerance.
  • Raphson Methods, Conjugate Gradient methods, Quasi-Newton Methods may be employed to get the optimum ⁇ p ⁇ .
  • One manner in which to implement these techniques is with Microsoft EXCEL, stored in memory 60 and operated on by processor 40 using standard operating systems such as WINDOWS®, available from Microsoft Corporation.
  • the data obtained from the finite element analysis, discussed above, is collated in a matrix form and entered, and the appropriate relationships between the matrices are established, e.g., in accordance with equation (11).
  • One manner in which to improve the calculation of ⁇ p ⁇ is by converting the non-linear formulation (19) into a linear problem. To that end, equation (17) is substituted into equation (19). This allows routine 84 to express equation (19) for the series of data 88, as follows:
  • routine 84 substituting a variable w for (Maximum ei, -ei, ⁇ 2 , -e 2 , . .
  • equation (21) may be defined as follows:
  • routine 84 may solve non-linear equation (19) formulated as equation (22) with the following constraints:
  • patterned device 20 is shown. To that end, it may be desired for patterned device 20 to have dimensions to facilitate magnification and distortion thereof, with the dimensions for geometric parameters of patterned device 20 shown below in Table 2.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)

Abstract

La présente invention concerne un procédé de calcul des paramètres des déformations que doit subir un dispositif tracé pour diminuer les écarts des dimensions entre un tracé reporté sur le dispositif et le tracé coté. Le procédé consiste notamment à comparer les écarts tridimensionnels entre des éléments du tracé reporté et les éléments correspondants du tracé de référence. Le procédé consiste ensuite à calculer les forces de déformation à appliquer au dispositif tracé pour atténuer les écarts de cotes, les forces respectant des contraintes prédéterminées. En l'occurrence, le totalisation d'une grandeur des forces est est sensiblement nulle, la totalisation du moment des forces étant également sensiblement nulle.
PCT/US2007/008423 2006-04-03 2007-04-03 Procédé de calcul des paramètres de déformation pour un dispositif tracé dans un système lithographique WO2007117519A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US78881106P 2006-04-03 2006-04-03
US78881206P 2006-04-03 2006-04-03
US60/788,811 2006-04-03
US60/788,812 2006-04-03

Publications (2)

Publication Number Publication Date
WO2007117519A2 true WO2007117519A2 (fr) 2007-10-18
WO2007117519A3 WO2007117519A3 (fr) 2008-04-03

Family

ID=38581607

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2007/008423 WO2007117519A2 (fr) 2006-04-03 2007-04-03 Procédé de calcul des paramètres de déformation pour un dispositif tracé dans un système lithographique

Country Status (2)

Country Link
TW (1) TW200815912A (fr)
WO (1) WO2007117519A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009067149A1 (fr) * 2007-11-21 2009-05-28 Molecular Imprints, Inc. Procédé de création d'un modèle utilisant un procédé de décollement
JP2014053495A (ja) * 2012-09-07 2014-03-20 Toshiba Corp パターン形成方法及びパターン形成装置
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962859A (en) * 1998-01-09 1999-10-05 International Business Machines Corporation Multiple variable shaped electron beam system with lithographic structure
US20020098426A1 (en) * 2000-07-16 2002-07-25 Sreenivasan S. V. High-resolution overlay alignment methods and systems for imprint lithography
US20030223079A1 (en) * 2002-04-11 2003-12-04 Hill Henry A. Interferometry system error compensation in twin stage lithography tools

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962859A (en) * 1998-01-09 1999-10-05 International Business Machines Corporation Multiple variable shaped electron beam system with lithographic structure
US20020098426A1 (en) * 2000-07-16 2002-07-25 Sreenivasan S. V. High-resolution overlay alignment methods and systems for imprint lithography
US20030223079A1 (en) * 2002-04-11 2003-12-04 Hill Henry A. Interferometry system error compensation in twin stage lithography tools

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ZHANG W-Y. ET AL.: 'Novel Room-Temperature First-Level Packaging Process for Microscale Devices' EUROSENSORS XVIII 2004 - THE 18TH EUROPEAN CONFERENCE ON SOLID-STATE TRANSDUCERS - SENSORS AND ACTUATORS A, PHYSICAL, [Online] vol. 123-124C, 30 September 2005, pages 646 - 654 Retrieved from the Internet: <URL:http://www.lehigh.edu/~wez6/2004_SNA-ESCWBonding-Lehigh_Final.pdf> *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
WO2009067149A1 (fr) * 2007-11-21 2009-05-28 Molecular Imprints, Inc. Procédé de création d'un modèle utilisant un procédé de décollement
US7906274B2 (en) 2007-11-21 2011-03-15 Molecular Imprints, Inc. Method of creating a template employing a lift-off process
JP2014053495A (ja) * 2012-09-07 2014-03-20 Toshiba Corp パターン形成方法及びパターン形成装置

Also Published As

Publication number Publication date
WO2007117519A3 (fr) 2008-04-03
TW200815912A (en) 2008-04-01

Similar Documents

Publication Publication Date Title
US7768624B2 (en) Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
USRE47483E1 (en) Template having a varying thickness to facilitate expelling a gas positioned between a substrate and the template
US7535549B2 (en) System and method for improvement of alignment and overlay for microlithography
US8142850B2 (en) Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US20070231422A1 (en) System to vary dimensions of a thin template
JP5306989B2 (ja) 複数のフィールド及びアライメント・マークを有する基板を同時にパターニングする方法
US8628712B2 (en) Misalignment management
US20060115999A1 (en) Methods of exposure for the purpose of thermal management for imprint lithography processes
EP2449428B1 (fr) Système de mandrin pourvu d&#39;un élément de support évidé
US20090014917A1 (en) Drop Pattern Generation for Imprint Lithography
EP2001646A2 (fr) Système de lithographie par impression
JP5728478B2 (ja) 隣接するフィールドのアラインメント方法
US10866510B2 (en) Overlay improvement in nanoimprint lithography
US20090148032A1 (en) Alignment Using Moire Patterns
WO2007117519A2 (fr) Procédé de calcul des paramètres de déformation pour un dispositif tracé dans un système lithographique
KR102354619B1 (ko) 나노임프린트 리소그래피에서의 템플릿 변형의 실시간 보정
US7874831B2 (en) Template having a silicon nitride, silicon carbide or silicon oxynitride film
Sreenivasan et al. Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
Sreenivasan et al. System and method for improvement of alignment and overlay for microlithography

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07754870

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07754870

Country of ref document: EP

Kind code of ref document: A2