WO2007114440A1 - Procede de fabrication d'un dispositif d'affichage d'image - Google Patents

Procede de fabrication d'un dispositif d'affichage d'image Download PDF

Info

Publication number
WO2007114440A1
WO2007114440A1 PCT/JP2007/057479 JP2007057479W WO2007114440A1 WO 2007114440 A1 WO2007114440 A1 WO 2007114440A1 JP 2007057479 W JP2007057479 W JP 2007057479W WO 2007114440 A1 WO2007114440 A1 WO 2007114440A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
image display
manufacturing
display device
electrons
Prior art date
Application number
PCT/JP2007/057479
Other languages
English (en)
Japanese (ja)
Inventor
Shinya Nakamichi
Akiyoshi Yamada
Original Assignee
Kabushiki Kaisha Toshiba
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kabushiki Kaisha Toshiba filed Critical Kabushiki Kaisha Toshiba
Publication of WO2007114440A1 publication Critical patent/WO2007114440A1/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/38Exhausting, degassing, filling, or cleaning vessels
    • H01J9/39Degassing vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/10AC-PDPs with at least one main electrode being out of contact with the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00Cathode ray tubes; Electron beam tubes
    • H01J31/08Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123Flat display tubes
    • H01J31/125Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group

Definitions

  • the present invention relates to a method for manufacturing an image display device including a front substrate and a rear substrate that are arranged to face each other.
  • a liquid crystal display (hereinafter referred to as LCD) that controls the intensity of light using the orientation of liquid crystal
  • a plasma display panel that emits a phosphor by ultraviolet rays of plasma discharge (Hereinafter referred to as “PDP”)
  • field emission display (hereinafter referred to as “FED”) that emits a phosphor by electron irradiation of a field emission electron emission device
  • phosphor emission by electron irradiation of a surface conduction electron emission device phosphor emission by electron irradiation of a surface conduction electron emission device.
  • SEDs Surface-conduction electron emission displays
  • the FED generally has a front substrate and a rear substrate opposed to each other with a predetermined gap therebetween, and these substrates are connected to each other at peripheral portions via a rectangular frame-shaped side wall.
  • a vacuum envelope is configured.
  • a phosphor screen is formed on the inner surface of the front substrate, and a plurality of electron-emitting devices are provided on the inner surface of the rear substrate as electron emission sources that excite the phosphor to emit light.
  • a plurality of support members are disposed between the substrates.
  • the potential on the back substrate side is almost the ground potential, and 10 kV, for example, is applied to the phosphor screen as the anode voltage.
  • the red, green, and blue phosphors that make up the phosphor screen are irradiated with electrons emitted from the electron-emitting devices, and the phosphors emit light to display an image.
  • Japanese Patent Laid-Open No. 11-191378 proposes a method of forming a non-evaporable getter layer in a region adjacent to the panel side of the PDP.
  • the front substrate and the rear substrate are put into a vacuum chamber and processed at a high temperature of 300 to 450 ° C. before becoming a product.
  • the degassing effect of the substrate is obtained.
  • the present invention has been made in view of the above points, and an object of the present invention is to provide a method for manufacturing an image display device that maintains high display performance over a long period of time.
  • a method for manufacturing an image display device is a method for manufacturing an image display device including an envelope composed of a plurality of substrates, and for at least one of the substrates, Irradiate electrons at high temperature.
  • An image display device manufacturing method is a method for manufacturing an image display device including an envelope constituted by a plurality of substrates, and performs a degassing process by heating.
  • the irradiated substrate is irradiated with electrons in a high temperature state.
  • FIG. 1 is a perspective view showing an SED according to an embodiment of the present invention.
  • Fig. 2 is a cross-sectional view of the SED along line II II in Fig. 1.
  • FIG. 3 schematically shows a processing chamber used in the manufacturing method according to the embodiment of the present invention.
  • FIG. 4 is a diagram comparing the amount of residual released gas between a substrate according to the present embodiment and a substrate according to a comparative example.
  • an SED provided with a surface conduction electron-emitting device will be described as an example.
  • this SED includes a front substrate 11 and a rear substrate 12 each having a rectangular glass plate force as insulating substrates, and these substrates have a gap of l to 3 mm. It is placed facing each other.
  • the front substrate 11 and the back substrate 12 constitute a flat rectangular vacuum envelope 10 whose peripheral portions are joined to each other via a rectangular frame-shaped side wall 13 and the inside is maintained in a vacuum state.
  • the side wall 13 functioning as a bonding member is sealed to the peripheral edge portion of the front substrate 11 and the peripheral edge portion of the rear substrate 12 by, for example, a sealing material 23 such as a low melting point glass or a low melting point metal. It is joined.
  • a plurality of spacers 14 are provided to support an atmospheric pressure load applied to the front substrate 11 and the rear substrate 12.
  • a plate-like or columnar spacer can be used as the spacer 14.
  • a phosphor screen 15 is formed as an image display surface.
  • the phosphor screen 15 has red, green, and blue phosphor layers 16 and a light shielding layer 17 formed in a matrix.
  • the phosphor layer 16 is formed in stripes or dots.
  • a metal back 20 having an aluminum film and the like is formed, and a getter film 22 is formed on the metal back.
  • a number of surface conduction electron-emitting devices 18 that emit electrons are provided on the inner surface of the rear substrate 12. These electron-emitting devices 18 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel. Each electron-emitting device 18 includes an electron-emitting portion (not shown) and a pair of device electrodes for applying a voltage to the electron-emitting portion.
  • a large number of wirings 21 for supplying a potential to the electron-emitting device 18 are provided in a matrix shape, and ends thereof are drawn out of the vacuum envelope 10.
  • an anode voltage is applied to the phosphor screen 15 and the metal back 20 and electrons of a predetermined current amount are emitted from the electron-emitting device 18. Then, the electrons emitted from the electron-emitting device 18 are accelerated by the anode voltage and collide with the phosphor screen. As a result, the phosphor layer 16 of the phosphor screen 15 is excited to emit light and display a color image.
  • a front substrate 11 having a phosphor screen 15 and a metal back 20 formed on the inner surface, and a rear substrate 12 having an electron-emitting device 18 are prepared.
  • a side wall 13 and a plurality of spacers 14 are joined to the back substrate 12 in advance.
  • a sealing material is filled along the entire upper surface of the side wall 13.
  • indium was used as the sealing material.
  • the front substrate 11 and the rear substrate 12 are heat-treated in a processing chamber to perform a degassing process.
  • a plate-like heater 33 is provided in the processing chamber 30.
  • two electron emission sources 31 are provided in the processing chamber 30. These electron emission sources 31 irradiate electrons toward the substrate.
  • An exhaust pump 36 is connected to the processing chamber 30 so that the inside of the chamber can be evacuated.
  • the front substrate 11 is put into the processing chamber 30 and placed facing the heater 33. Thereafter, the inside of the processing chamber 30 is evacuated by the exhaust pump 36 to create a vacuum atmosphere. Subsequently, the front substrate 11 is heated to 200 to 550 ° C., preferably 250 to 350 ° C. by the heater 33, and the gas contained in the front substrate 11 and on the surface is released. In addition, with the substrate temperature of the front substrate 11 maintained at a high temperature of 200 ° C or higher, a voltage of 10 kV or more is applied from the power source 34 to the front substrate 11, and electrons are emitted from the electron emission source 31 to the front substrate 11 To do.
  • the amount of electron current applied to the front substrate 11 is defined by the amount of charge that is the product of the current density and time.
  • the amount of electron current is set higher than the amount of electron current emitted by 18 electron emitters during normal SED image display.For example, the current density is 2 mAZcm 2 for 3 hours. Process. This value is equivalent to 22 CZcm 2 in terms of charge, and corresponds to 1 Z 10 of the panel life at the time of product.
  • the charge amount range By setting the charge amount range to 1CZcm 2 or more, the effect of degassing the substrate can be obtained, and in order to prevent deterioration of the luminous efficiency of the phosphor, it is set to 50CZcm 2 or less. Further, the electron beam is scanned so that the entire surface of the front substrate 11 is irradiated, or electrons are irradiated while the front substrate 11 is moved relative to the electron emission source 31. During the degassing process, evacuation by the exhaust pump 36 is continued, and the desorbed gas components are exhausted from the processing chamber 30 to the outside, and the inside of the processing chamber is maintained in a clean vacuum state.
  • the atmosphere in the processing chamber 30 is preferably evacuated, but air or other gas atmosphere can be selected depending on the time and temperature.
  • the back substrate 12 is also degassed in the processing chamber 30 as described above.
  • a getter film is formed on the front substrate 11. Thereafter, the front substrate 11 and the rear substrate 12 are sealed with the side wall 13 in between, and the vacuum envelope 10 is formed.
  • the present inventor uses the processing chamber 30 described above to perform degassing by irradiating electrons with the substrate temperature heated to 300 ° C, and the substrate temperature to room temperature.
  • a substrate for comparison that has been degassed by irradiating electrons is prepared, and the SED envelope according to this embodiment and the envelope as a comparative example are formed using these substrates, respectively. did.
  • these SEDs were driven, and the amount of released gas when a certain time passed was compared.
  • the substrate that was degassed by irradiating electrons with the substrate temperature heated to 300 ° C. is a residual emission gas compared to the case of using the substrate of the comparative example. You can see that the amount is small. Therefore, according to this embodiment, the substrate can be efficiently degassed, the amount of gas released inside the SED during operation can be reduced, and the inside of the vacuum envelope can be maintained at a high degree of vacuum. Possible SEDs can be obtained. This makes it possible to obtain an SED that can maintain high display performance over a long period of time.
  • the present invention is not limited to the above-described embodiment, and can be embodied by modifying the constituent elements without departing from the scope in the implementation stage. Further, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, constituent elements over different embodiments may be appropriately combined.
  • the present invention is not limited to SED, and may be applied to other image display devices such as FED and PDP.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'un dispositif d'affichage d'image qui comprend une enveloppe composée d'une pluralité de substrats. Le procédé consiste à irradier au moins un des substrats (11) avec des électrons à haute température.
PCT/JP2007/057479 2006-04-06 2007-04-03 Procede de fabrication d'un dispositif d'affichage d'image WO2007114440A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006105477A JP2007280763A (ja) 2006-04-06 2006-04-06 画像表示装置の製造方法
JP2006-105477 2006-04-06

Publications (1)

Publication Number Publication Date
WO2007114440A1 true WO2007114440A1 (fr) 2007-10-11

Family

ID=38563704

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/057479 WO2007114440A1 (fr) 2006-04-06 2007-04-03 Procede de fabrication d'un dispositif d'affichage d'image

Country Status (2)

Country Link
JP (1) JP2007280763A (fr)
WO (1) WO2007114440A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000315458A (ja) * 1999-04-28 2000-11-14 Toshiba Corp 平面型画像表示装置の製造方法、および平面型画像表示装置の製造装置
US20010009060A1 (en) * 1998-05-14 2001-07-26 Browning Jim J. Method for cleaning phosphor screens for use with field emission displays

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010009060A1 (en) * 1998-05-14 2001-07-26 Browning Jim J. Method for cleaning phosphor screens for use with field emission displays
JP2000315458A (ja) * 1999-04-28 2000-11-14 Toshiba Corp 平面型画像表示装置の製造方法、および平面型画像表示装置の製造装置

Also Published As

Publication number Publication date
JP2007280763A (ja) 2007-10-25

Similar Documents

Publication Publication Date Title
JP2000323072A (ja) 気密容器および画像形成装置
KR20030065657A (ko) 전계 방출 표시장치 및 그 제조방법
US6702636B2 (en) Method and apparatus for manufacturing image display device
US6827621B1 (en) Method and apparatus for manufacturing flat image display device
WO2007114440A1 (fr) Procede de fabrication d'un dispositif d'affichage d'image
JP2008091149A (ja) 画像表示装置の製造方法
JP2004071294A (ja) 画像表示装置およびその製造方法
KR100372735B1 (ko) 전계방출 표시장치
JP2002100311A (ja) 画像表示装置およびその製造方法
JP3454499B2 (ja) 画像表示装置の製造方法
JP4237469B2 (ja) 表示装置
WO2006035713A1 (fr) Affichage d’images
JP4005872B2 (ja) 画像表示装置の製造方法および製造装置
JPH1064429A (ja) 画像表示装置の製造方法
JP2004349009A (ja) 画像表示装置の製造方法、製造装置、およびこの製造方法により製造された画像表示装置
WO2005020271A1 (fr) Dispositif pour afficher des images
JP2008204825A (ja) 画像表示装置およびその製造方法
WO2004013886A1 (fr) Procede et dispositif pour realiser un dispositif d'affichage d'images
JP2004031276A (ja) 画像表示装置の製造方法
JPH11329243A (ja) 画像表示装置の製造方法
JP2005011557A (ja) フラットパネルディスプレイ装置の製造方法および装置
JP2006019105A (ja) 基板処理方法および基板処理装置
JP2000021338A (ja) 画像表示装置及びその製造方法
JP2006092797A (ja) 基板処理方法および基板処理装置
JP2006100100A (ja) 画像表示装置の製造方法および製造装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07740915

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07740915

Country of ref document: EP

Kind code of ref document: A1