WO2007109652A2 - Aluminum bump bonding for fine aluminum wire - Google Patents

Aluminum bump bonding for fine aluminum wire Download PDF

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Publication number
WO2007109652A2
WO2007109652A2 PCT/US2007/064373 US2007064373W WO2007109652A2 WO 2007109652 A2 WO2007109652 A2 WO 2007109652A2 US 2007064373 W US2007064373 W US 2007064373W WO 2007109652 A2 WO2007109652 A2 WO 2007109652A2
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WO
WIPO (PCT)
Prior art keywords
wire
bump
aluminum
bond
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2007/064373
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French (fr)
Other versions
WO2007109652A3 (en
Inventor
Adams Zhu
Xingquan Fang
Fred Ren
Yongsuk Kwon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
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Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Priority to DE200711000671 priority Critical patent/DE112007000671T8/en
Priority to JP2009501692A priority patent/JP2009530872A/en
Priority to KR1020087022387A priority patent/KR101355987B1/en
Priority to CN2007800094755A priority patent/CN101405860B/en
Publication of WO2007109652A2 publication Critical patent/WO2007109652A2/en
Publication of WO2007109652A3 publication Critical patent/WO2007109652A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5434—Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • This invention relates to the bonding application of aluminum wire to a surface such as a leadframe or a contact on a semiconductor device.
  • the bond stitch on bump method for bonding gold wires to a leadframe uses a gold bump on the leadframe as the interface between the bond wire and the leadframe. This relaxes the range of bonding parameters for gold bond wires.
  • Other methods may use solder bumps in a similar fashion. However, neither of these methods are suitable for bonding aluminum wire.
  • the invention comprises, in one form thereof, a packaged semiconductor device in which the bond wires are bonded to the leads with an aluminum bump bond.
  • the semiconductor device is mounted on a leadframe having leads with a nickel plating.
  • a fine aluminum wire such as a 2 mil diameter wire
  • an aluminum bump is bonded to the nickel plating and the wire is bonded to the bump.
  • the bump is aluminum doped with nickel and is formed from a large diameter wire, such as a 6 mil diameter wire.
  • the invention includes a method for packaging a semiconductor device.
  • the method comprises the steps of providing a leadframe with a semiconductor device attached thereto, wherein the leadframe has a plurality of leads; building a bump on the surface of one or more of the leads; and wire bonding an aluminum bond wire to each of the bumps.
  • the bond wire has a fine diameter, such as a diameter of about 2 mil, and the bump has a large diameter, such as a diameter of about 6 mil.
  • the bump comprises aluminum and it may be doped with nickel.
  • the leads may have a nickel plating.
  • the method may also include the further step of encapsulating the leadframe, semiconductor device, and bond wires in a nonconducting encapsulation polymer.
  • An advantage of the present invention is that the aluminum to nickel bond is achieved through the large diameter bump and the fine aluminum wire is the able to be bonded to an aluminum surface. While the fine wire aluminum to nickel bond has been shown to be unreliable and particularly sensitive to surface conditions and bonding parameters, the large diameter wire aluminum to nickel bond has been shown to be robust and less sensitive to surface conditions and bonding parameters. Further, the invention shows a great reduction in bond lift and heel crack conditions.
  • Fig. 1. is a cross-sectional view of a semiconductor package using aluminum bump bonds according to the present invention
  • Fig. 2 is a side view of the aluminum bump bond of a wire to a lead according to Fig. 1 ;
  • Fig. 3A is a front view of the tip of a wedge tool for forming the aluminum bumps according to Fig. 2;
  • Fig. 3B is a cross-sectional view of the wedge tool tip of Fig. 3 A.
  • Fig. 4 is a flow chart of the aluminum bump bonding process of the present invention.
  • FIG. 1 there is shown a semiconductor package having the aluminum bump bonds of the present invention.
  • the package 10 includes a semiconductor device 12, a leadframe 14, several aluminum bond wires 16, and several bump bonds 1 8.
  • the leadframe 14 includes several leads 20 and a die pad 22 for supporting the semiconductor device 12.
  • the semiconductor device includes several electrodes for being connected to the leads 20 by the bond wires 16.
  • the bond wires 16 have a diameter of about 2 mil (50 ⁇ m) and a composition of about 99% aluminum and about 1% silicon.
  • the wire 16 may have alternative characteristics in different embodiments.
  • a fine wire is a wire having a diameter of 3 mil or less and a large diameter wire has a diameter of greater than 3 mil.
  • the bump bond 18 is shown in detail in Fig. 2, bonding a wire 16 to a lead 20.
  • the lead 20 is typically copper with a nickel plating 24 on its surface.
  • the bump bond 18 includes an aluminum bump 26 comprising a portion of large diameter aluminum wire, such as a diameter of about 6 mil (150 ⁇ m).
  • the bump 26 comprises aluminum doped with nickel.
  • the bump 26 is bonded to the nickel plating 24 similarly to the leadframe bonding of a 6 mil wire, except that the wedge tool has a flat surface as opposed to the triangular wedge normally used.
  • the flat tip wedge tool 28, shown in Figs. 3A and 3B, provides a bonded bump 26 with a flat surface for bonding with the wire 16. Since the bump 26 doesn't have heel like a wire would, the wedge tool 28 does not have an upward curve on the wedge surface to accommodate the heel as a conventional wedge tool would,
  • the process of the invention includes the steps of wafer sawing 30, die attach 32, bump building 34, wire bonding 36, encapsulation 38, and the typical end-of-line finishing and testing 40.
  • the wafer sawing step 30 and the die attach step 32 are particular to the semiconductor device and leadframe.
  • the bump building step 34 comprises the bonding of the end of a 6 mil aluminum wire to the nickel plating 24 on a lead 20 using the flat tip wedge tool 28. The 6 mil wire is then broken away from the end to leave the bump 26. In a particular embodiment, care is taken to line up the length of the bump 26 with the direction of the wire 16 that will be bonded thereto. Further, the size of the bump 26 should be at least as big as the gate pad opening on the semiconductor chip.
  • the end of the aluminum wire 16 is bonded to the aluminum bump 26 using typical wire bonding techniques.
  • Non-conducting encapsulation polymer 42 (Fig. 1) is mo ⁇ ded over the package in the encapsulation step 38.
  • the typical finishing and testing is then carried out in step 40.
  • the aluminum to nickel bond is between the nickel plating 24 and the bump 26, which is a piece of 6 mil aluminum wire.
  • Such bonds have been shown to be a much more reliable process with relaxed bond parameters than the direct bonding between a fine aluminum wire and the nickel plating.
  • the fine aluminum wire 16 is bonded to the bump 26 in an aluminum to aluminum bond, which is inherently more reliable than the aluminum to nickel bond of the fine wire.
  • the bump bond 18 has improved results in a bond shear test and a bond pull test over the fine wire aluminum to nickel bond. Further, the bond thickness of the wire 16 is improved resulting in belter resistance to heel crack.
  • wire and bond sizes may be used.
  • a wire bond for a 5 mil wire may use a 20 mil bump.

Landscapes

  • Wire Bonding (AREA)

Abstract

The invention includes a packaged semiconductor device in which the bond wires are bonded to the leads with an aluminum bump bond. The semiconductor device is mounted on a lϵadframc having leads with a nickel plating. To form the bump bond between a fine aluminum wire, such as a 2 mil diameter wire, and the lead, an aluminum bump is bonded to the nickel plating and the wire is bonded to the bump. The bump is aluminum doped with nickel and is formed from a large diameter wire, such as a 6 mil diameter wire.

Description

ALUMINUM BUMP BONDING FOR FINE ALUMINUM WIRE
FIELD OF THE INVENTION
[0001] This invention relates to the bonding application of aluminum wire to a surface such as a leadframe or a contact on a semiconductor device.
BACKGROUND OF THE INVENTION
[0002 j Conventionally, aluminum bond wire connecting the features of a semiconductor die to the leads of a leadframe in a semiconductor package are bonded directly to the leadframe. The common issues associated when using this method with fine aluminum bond wire (less than about 3 mil diameter) include heel break and bond lift. Heel lift occurs when the bonding parameters are set too high and the bond wire breaks at the bond, potentially resulting in the loss of electrical communication between the semiconductor feature and the lead. Bond lift generally occurs when the bonding parameters are set too low and the bond disengages from the lead. Thus, there is a narrow range of bonding parameters that will result in a resilient bond. Further, the bonding parameters for bonding fine aluminum wire directly to the leadframe are quite sensitive to the material composition of the aluminum wire and the surface condition of the leadframe.
[0003] The bond stitch on bump method for bonding gold wires to a leadframe uses a gold bump on the leadframe as the interface between the bond wire and the leadframe. This relaxes the range of bonding parameters for gold bond wires. Other methods may use solder bumps in a similar fashion. However, neither of these methods are suitable for bonding aluminum wire.
[0004] There exists a number of U.S. patents directed to wire bonding in semiconductor packaging including United States Patent Number 6,413,797 issued to Oka, et al. on July 2, 2002. Oka teaches a semiconductor device with electrodes having gold bumps disposed thereon in a gold plating process. The gold bumps facilitate the bonding of gold wires to the electrodes. Oka does not teach an inexpensive and simple method of providing an aluminum bump for bonding fine aluminum wire to surfaces. [0005] Therefore, what is desired is a method of bonding fine aluminum wire that has relaxed bonding parameters, that shows improved reliability in reduced heel crack and bond lift situations, and that is inexpensive.
SUMMARY OF THE INVENTION
|0006) The invention comprises, in one form thereof, a packaged semiconductor device in which the bond wires are bonded to the leads with an aluminum bump bond. The semiconductor device is mounted on a leadframe having leads with a nickel plating. To form the bump bond between a fine aluminum wire, such as a 2 mil diameter wire, and the lead, an aluminum bump is bonded to the nickel plating and the wire is bonded to the bump. The bump is aluminum doped with nickel and is formed from a large diameter wire, such as a 6 mil diameter wire.
[0007] In another form, the invention includes a method for packaging a semiconductor device. The method comprises the steps of providing a leadframe with a semiconductor device attached thereto, wherein the leadframe has a plurality of leads; building a bump on the surface of one or more of the leads; and wire bonding an aluminum bond wire to each of the bumps. The bond wire has a fine diameter, such as a diameter of about 2 mil, and the bump has a large diameter, such as a diameter of about 6 mil. The bump comprises aluminum and it may be doped with nickel. The leads may have a nickel plating. The method may also include the further step of encapsulating the leadframe, semiconductor device, and bond wires in a nonconducting encapsulation polymer.
[0008] An advantage of the present invention is that the aluminum to nickel bond is achieved through the large diameter bump and the fine aluminum wire is the able to be bonded to an aluminum surface. While the fine wire aluminum to nickel bond has been shown to be unreliable and particularly sensitive to surface conditions and bonding parameters, the large diameter wire aluminum to nickel bond has been shown to be robust and less sensitive to surface conditions and bonding parameters. Further, the invention shows a great reduction in bond lift and heel crack conditions. BRIEF DESCRIPTION OF THE DRAWINGS
[Θ009] The present invention is disclosed with reference to the accompanying drawings , wherein:
Fig. 1. is a cross-sectional view of a semiconductor package using aluminum bump bonds according to the present invention;
Fig. 2 is a side view of the aluminum bump bond of a wire to a lead according to Fig. 1 ;
Fig. 3A is a front view of the tip of a wedge tool for forming the aluminum bumps according to Fig. 2;
Fig. 3B is a cross-sectional view of the wedge tool tip of Fig. 3 A; and
Fig. 4 is a flow chart of the aluminum bump bonding process of the present invention.
[0010] Corresponding reference characters indicate corresponding parts throughout the several views. The example set out herein illustrates one embodiment of the invention but should not be construed as limiting the scope of the invention in any manner.
DETAILED DESCRIPTION
[0011] Referring to Fig. 1 , there is shown a semiconductor package having the aluminum bump bonds of the present invention. The package 10 includes a semiconductor device 12, a leadframe 14, several aluminum bond wires 16, and several bump bonds 1 8.
[0012] The leadframe 14 includes several leads 20 and a die pad 22 for supporting the semiconductor device 12. The semiconductor device includes several electrodes for being connected to the leads 20 by the bond wires 16. In a particular embodiment, the bond wires 16 have a diameter of about 2 mil (50μm) and a composition of about 99% aluminum and about 1% silicon. However, the wire 16 may have alternative characteristics in different embodiments. For the purposes of this description, a fine wire is a wire having a diameter of 3 mil or less and a large diameter wire has a diameter of greater than 3 mil. [0013] The bump bond 18 is shown in detail in Fig. 2, bonding a wire 16 to a lead 20. The lead 20 is typically copper with a nickel plating 24 on its surface. The bump bond 18 includes an aluminum bump 26 comprising a portion of large diameter aluminum wire, such as a diameter of about 6 mil (150μm). In a particular embodiment, the bump 26 comprises aluminum doped with nickel. The bump 26 is bonded to the nickel plating 24 similarly to the leadframe bonding of a 6 mil wire, except that the wedge tool has a flat surface as opposed to the triangular wedge normally used. The flat tip wedge tool 28, shown in Figs. 3A and 3B, provides a bonded bump 26 with a flat surface for bonding with the wire 16. Since the bump 26 doesn't have heel like a wire would, the wedge tool 28 does not have an upward curve on the wedge surface to accommodate the heel as a conventional wedge tool would,
[0014) Referring to Fig. 4, the process of the invention includes the steps of wafer sawing 30, die attach 32, bump building 34, wire bonding 36, encapsulation 38, and the typical end-of-line finishing and testing 40. The wafer sawing step 30 and the die attach step 32 are particular to the semiconductor device and leadframe. The bump building step 34 comprises the bonding of the end of a 6 mil aluminum wire to the nickel plating 24 on a lead 20 using the flat tip wedge tool 28. The 6 mil wire is then broken away from the end to leave the bump 26. In a particular embodiment, care is taken to line up the length of the bump 26 with the direction of the wire 16 that will be bonded thereto. Further, the size of the bump 26 should be at least as big as the gate pad opening on the semiconductor chip. In the wire bonding step 36, the end of the aluminum wire 16 is bonded to the aluminum bump 26 using typical wire bonding techniques. Non-conducting encapsulation polymer 42 (Fig. 1) is moϊded over the package in the encapsulation step 38. The typical finishing and testing is then carried out in step 40.
[0015] Thus, the aluminum to nickel bond is between the nickel plating 24 and the bump 26, which is a piece of 6 mil aluminum wire. Such bonds have been shown to be a much more reliable process with relaxed bond parameters than the direct bonding between a fine aluminum wire and the nickel plating. Further, the fine aluminum wire 16 is bonded to the bump 26 in an aluminum to aluminum bond, which is inherently more reliable than the aluminum to nickel bond of the fine wire. It has also been shown that even with low bonding parameter specification limits, the bump bond 18 has improved results in a bond shear test and a bond pull test over the fine wire aluminum to nickel bond. Further, the bond thickness of the wire 16 is improved resulting in belter resistance to heel crack.
[0016] In alternative embodiments, other wire and bond sizes may be used. For example, a wire bond for a 5 mil wire may use a 20 mil bump.
[0017] While the invention has been described with reference to preferred embodiments, it will be understood by those skilled in the ail that various changes may be made and equivalents may be substituted for elements thereof to adapt to particular situations without departing from the scope of the invention. Therefore, it is intended that the invention not be limited to the particular embodiments disclosed as the best mode contemplated for carrying out this invention, but that the invention will include all embodiments falling within the scope and spirit of the appended claims.

Claims

Claims:
1. Λ packaged semiconductor device having an aluminum bump bond comprising: a bonding surface; an aluminum bump bonded to said bonding surface, said bump comprising a length of a large diameter aluminum wire; and an aluminum bond wire having a bond end that is bonded to said bump, said bond wire comprising a fine aluminum wire,
2. The packaged semiconductor device of Claim 1 , said bonding surface comprising a nickel plating.
3. The packaged semiconductor device of Claim 2, said bump being doped with nickel.
4. The packaged semiconductor device of Claim I5 the large diameter aluminum wire having a diameter of about 6 mil.
5. The packaged semiconductor device of Claim 1 , the fine aluminum wire having a diameter of about 2 mil.
6. The packaged semiconductor device of Claim 1, said bonding surface comprising a lead that is part of a leadframe.
7. The packaged semiconductor device of Claim 1, said bump having a substantially flat surface formed by a flat tip wedge tool to provide a surface for bonding the bond end of said bond wire.
8. A method of packaging a semiconductor device, comprising the steps of: providing a leadframe with a semiconductor device attached thereto, the leadframe having a plurality of leads; building a bump on the surface of one or more of the leads; and wire bonding an aluminum bond wire to each of the bumps.
9. The method of Claim 8, the bond wire having a fine diameter.
10. The method of Claim 9, the bond wire having a diameter of about 2 mil.
1 1. The method of Claim 8. the bump building step comprising bonding a portion of a large-diameter aluminum wire to one or more of the leads; and breaking the large-diameter wire away from the portion to leave a bump.
12. The method of Claim 1 1 , the step of bonding a portion of a large-diameter aluminum wire comprising the use of a flat tip wedge tool.
13. The method of Claim 11 , the bump having a diameter of about 6 mil.
14. The method ofClaim 8, the bump comprising aluminum.
15. The method of Claim 14, the leads having a nickel plating and the bump being doped with nickel.
16. The method of Claim 8, further comprising the step of encapsulating the leadframe, semiconductor device, and bond wires in a non-conducting encapsulation polymer.
PCT/US2007/064373 2006-03-20 2007-03-20 Aluminum bump bonding for fine aluminum wire Ceased WO2007109652A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE200711000671 DE112007000671T8 (en) 2006-03-20 2007-03-20 Aluminum elevation bonding for fine aluminum wire
JP2009501692A JP2009530872A (en) 2006-03-20 2007-03-20 Aluminum bump bonding for thin aluminum wires
KR1020087022387A KR101355987B1 (en) 2006-03-20 2007-03-20 Aluminum bump bonding for fine aluminum wire
CN2007800094755A CN101405860B (en) 2006-03-20 2007-03-20 Aluminum bump bonding for fine aluminum wire

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/385,022 US20070216026A1 (en) 2006-03-20 2006-03-20 Aluminum bump bonding for fine aluminum wire
US11/385,022 2006-03-20

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WO2007109652A2 true WO2007109652A2 (en) 2007-09-27
WO2007109652A3 WO2007109652A3 (en) 2008-01-17

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JP (1) JP2009530872A (en)
KR (1) KR101355987B1 (en)
CN (1) CN101405860B (en)
DE (1) DE112007000671T8 (en)
MY (1) MY147586A (en)
TW (1) TW200742017A (en)
WO (1) WO2007109652A2 (en)

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JP2012243943A (en) * 2011-05-19 2012-12-10 Tokai Rika Co Ltd Wire bonding structure, electronic apparatus, and manufacturing method of electronic apparatus
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JP2009530872A (en) 2009-08-27
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DE112007000671T5 (en) 2009-01-29
US8138081B2 (en) 2012-03-20
US20100035385A1 (en) 2010-02-11
CN101405860B (en) 2011-06-08
MY147586A (en) 2012-12-31
TW200742017A (en) 2007-11-01
KR20080103072A (en) 2008-11-26
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WO2007109652A3 (en) 2008-01-17
US20070216026A1 (en) 2007-09-20

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