WO2007099518A1 - Masque stencil destiné à une reproduction précise de motif - Google Patents

Masque stencil destiné à une reproduction précise de motif Download PDF

Info

Publication number
WO2007099518A1
WO2007099518A1 PCT/IB2007/050721 IB2007050721W WO2007099518A1 WO 2007099518 A1 WO2007099518 A1 WO 2007099518A1 IB 2007050721 W IB2007050721 W IB 2007050721W WO 2007099518 A1 WO2007099518 A1 WO 2007099518A1
Authority
WO
WIPO (PCT)
Prior art keywords
stencil
sub
substrate
frame
stencil mask
Prior art date
Application number
PCT/IB2007/050721
Other languages
English (en)
Inventor
Juergen Brugger
Lianne Doeswijk
Marc Van Den Boogaart
Original Assignee
Ecole Polytechnique Federale De Lausanne (Epfl)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytechnique Federale De Lausanne (Epfl) filed Critical Ecole Polytechnique Federale De Lausanne (Epfl)
Publication of WO2007099518A1 publication Critical patent/WO2007099518A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Definitions

  • This invention relates in general to lithographic techniques for pattern replication using stencils and more particularly to the prevention of pattern distortion due to thermal effects and/or gap influence for stencil lithography.
  • Micro- and Nanostencil lithography is a surface patterning technique by using thin mechanical stencil masks (ie. membranes with apertures) for local material deposition.
  • Stencils have been used for decades to shadow the deposition of metal vapors, but only recently, miniaturization into the micron and nanometer range have been possible due to progress in micro and nanoengineering.
  • metal or other material fluxes deposit only on the areas exposed through the holes/apertures.
  • the stencils have to be reduced in thickness.
  • 100-500 nm of e.g. low stressed Silicon Nitride (Si x Ny) allows creating surface pattern in the 100s nm range in a simple, reproducible and direct fashion [1, 2].
  • the method is scalable to full wafer range (>100 mm) and constitutes a low-cost alternative to high-resolution lithography.
  • stenciling is a convenient method for the patterning of surfaces that are too fragile for solvent-based photolithography, such as surfaces coated with polymer and (bio)chemical layers as well as free-standing MEMS beams. Furthermore, the stencil mask can be aligned and positioned with micrometer precision on a full wafer scale.
  • a further possibility is to scan the stencil vs. substrate during deposition which gives access to arbitrary patterns [3] [4] [5] [6] and tapered film thickness [7]. It can also be used for the deposition of complex materials using e.g. pulsed laser deposition (PLD) [8]
  • PLD pulsed laser deposition
  • Figure 1 illustrates the principle of a known deposition apparatus.
  • the stencil deposition apparatus comprises at least: -) a standard vacuum-based deposition system (as known per se in the art) -) a shadow-mask stencil or membrane and -) a substrate positioning device (x, y, z stage) for dynamic stencil (optional)
  • the pattern is made by continuously scanning in x, y a basic aperture and 'draw' the pattern on the substrate.
  • Photolithography is widely used to define surface patterns in all technical disciplines (microelectronics, micro-optics, micromechanics, MEMS, integrated microfluidic systems) and increasingly in life-science applications o Photolithography is based on several steps to form the final micro/nanostructure (resist coating, baking, exposure, development, etching or lift-off, resist stripping) o Extension into sub-micron range requires expensive, complex equipment, which is not available widely o Solvent-based photolithography can not be applied to chemical functional surfaces o Lithography can not be done to mechanically fragile surfaces (e.g. on membranes, cantilevers)
  • Nanostencil is a local material adding technique, and does not need any further steps.
  • the nanostencil membranes are placed between the deposition source and substrate.
  • Typical application examples of nanostencil patterns are given in figure 1C. More specifically, the top left image of this figure illustrates a full wafer stencil with detail of membrane aperture; the top right image shows a large area patterning of 300-700-nm Au dots; the bottom left image shows a nanopatterning of free-standing MEMS cantilever and the bottom right image shows a functional nanodevice .
  • An increased demand for micro- and nanometer scale patterning on "unconventional" surfaces and/or non-IC applications has given rise to new and alternative patterning technologies.
  • stencil lithography is a surface patterning technique based on selective deposition of material through stencils.
  • stencil lithography has the advantage of being a direct, resistless vacuum patterning technology, i.e.
  • stencil lithography can create a structured thin film in one process step.
  • the deposited structures can either be used directly, transferred into a sub-layer, combined by lift-off processes, or refined by self assembly or other growth processes.
  • An additional advantage of stenciling over other patterning methods is its possible non-contact application avoiding cross-contamination or surface damage in case of fragile surfaces.
  • Stencils have been used for decades but only recently miniaturization into the micron and nanometer range has been possible due to progress in micro- and nanoengineering.
  • Nanostencil lithography typically uses solid-state membranes with structures in the nanometer range ( ⁇ 100 nm) in combination with micrometer features (>10 ⁇ m).
  • the use of thin membranes is necessary to facilitate the fabrication of these small stencil apertures.
  • 100-500 nm thick membranes of low stress silicon nitride are used.
  • stabilization structures are incorporated into the stencil membranes. While going down in resolution, the stencil size has been increased up to full wafer size (100 mm).
  • full-wafer stencil lithography gives way to low-cost structuring of 3D (MEMS) surfaces.
  • MEMS 3D
  • a large gap between the stencil and the substrate leads to a reduced sharpness of the edges of the deposited structures and limited spatial detail.
  • the main current limitations are the following: o Gap control between stencil and substrate o Position control (lateral)
  • Gap control In order to achieve high resolution for patterning, the apertures of the stencil must be 'as close as possible' ( ⁇ 1 micrometer) to the substrate surface. Due to wafer curvature and other local imperfections, it is generally impossible to approach two rigid 2D-surfaces within 1 micrometer. This limitation is illustrated by figures 2A and 2B showing the gap that may be present between a stencil mask 100 and a substrate 101.
  • Position control due to mechanical drift as function of vibration, temperature, stress and other parameters, there is a lateral shift of the apertures during deposition process which has the result to imprecise deposition
  • figure 3 which shows the result of a mechanical drift.
  • the center of the opening has moved to the left of a distance d with respect to the substrate 101.
  • Substrate and/or stencil bending prevents full contact between stencil and substrate on large areas.
  • the membrane is provided with a lithographic pattern consisting of at least one pattern opening, and is advantageously formed of a mechanically rigid material such as silicon.
  • Multiple stress relief openings are formed within the non-sacrificial membrane portion, i.e., the portion outside the at least one pattern opening.
  • the positioning and distribution of the stress relief openings in accordance with the disclosed invention results in the relief of stress concentrations induced by the pattern openings, such that tensional stress is not concentrated in one portion of the membrane but instead is substantially evenly distributed therethrough. Additional material may be added in the stress relieving openings in one embodiment.
  • the shadow mask comprises several layers that form a tapered portion, the layer close to the substrate being of the same material as the substrate.
  • the present invention addresses the issues of misalignment between stencil apertures and substrate structures due to thermal effects or mechanical vibrations, and gap control for full-wafer lithography.
  • the new design according to the invention allows for more flexible, low-cost stencil fabrication and lithography, further improving the reusability of stencils.
  • the present invention proposes following improvements on the state-of-the-art method: o Enable 'intimate' contact between stencil and substrate over a large 2D surface is enabled due to mechanically compliant stencil rims. o As a consequence, the stencil segments adjust themselves to the substrate (out of plane self-alignment) o The segments rim are mechanically stiff enough to prevent (or reduce) stencil bending and lateral shift o Local fixing points between stencil segments and substrate keep the aperture at fixed position during deposition process (in-situ local clamping)
  • the invention proposes to decouple a large stencil into mechanically independent, compliant sub-units.
  • the sub-units are connected to the rigid stencil frame by a flexible body.
  • the flexible body is an integral part of the frame and sub-unit, e.g. is made of the same material (Si wafer).
  • the sub-units can be fixed locally to the substrate after alignment, preventing any movement during deposition.
  • the rigid stencil frame keeps the stencil from bending and facilitates easy stencil handling.
  • the flexible body connecting the sub-units to the rigid stencil frame will preferably be shaped such that the sub-unit is protruding from the stencil surface defined by the rigid stencil frame.
  • the stencil sub-units can adjust themselves to the curves of a large area substrate (out-of-plane self-alignment), reducing the local gap present between stencil membrane and substrate surface. This will increase the sharpness of the edge of the stencil-deposited structures and the spatial resolution.
  • the sub-units are designed such that they comprise holders in which small stencils can be placed.
  • the holders as sub-units connected by flexible bodies to the rigid stencil frame can be fabricated independently from the small stencils.
  • the small stencils can be placed that are fabricated by a standard process. This separates the more complex fabrication steps from the simple stencil fabrication.
  • the interchangeable stencils also facilitate quick prototyping.
  • the combination of the three proposed stencil improvements in a large-area stencil results in a flexible, low-cost patterning method with high resolution, good pattern definition, and aligned deposition.
  • the stencil features according to the invention have the following characteristics: o Wafer stencil is decoupled into mechanically compliant sub-units o Stencil sub-units are connected to stencil frame by a flexible body o
  • the flexible units are laterally and vertically not stiff (as in the past) but elastic in both directions; this can be achieved by micromechanical springs, cantilever, or eventually elastic polymers o
  • the sub-units stencil frames
  • the main frame is not fixed and can move, this is important to release the stress and drift occurring during deposition.
  • FIGS IA to 1C illustrate devices of the prior art
  • FIGS. 2A and 2B illustrate the problem of gap control
  • FIG. 3 illustrates the problem of alignment control
  • Figures 4 A and 4B are a first illustration of the principle of the invention.
  • FIG. 5 is a second illustration of the principle of the invention.
  • Figure 6 shows a first illustrative embodiment of the invention
  • Figure 7 shows a second illustrative embodiment of the invention
  • Figure 8 shows a third illustrative embodiment of the invention.
  • a state-of-the-art stencil consists of two components, namely thin stencil membranes (e.g. SiN) with apertures within a rigid, thick frame (e.g. Si). These stencils are fabricated by standard micro/nanomachining processes (i.e. photolithography, RIE etching, KOH etching). In the present invention, the two components are connected through a flexible body. Accordingly, the stencil of the invention is in fact formed of at least a stencil frame (i.e.
  • a large stencil with one or more openings and at least one sub-unit in said opening, said sub-unit comprising a small-sized stencil which has at least one aperture of the shape to be deposited, the sub-units being attached to the stencil frame by flexible means, for example flexible bodies.
  • the flexible body can be formed by e.g. micromechanical suspensions and springs, still using standard processes.
  • the flexible body can also be formed by the introduction of elastic materials (e.g. polymers) between the sub-units and the frame.
  • these flexible bodies decouple the sub-units in X and Y direction, and partly in Z direction, from the rigid frame.
  • This flexibility allows for the sub-units to be fixed separately to the substrate, if required.
  • the sub-units can be locally kept in place by e.g. laser welding, thin resist structures, glue, electrostatic or magnetic forces.
  • the stencil frame will expand laterally at elevated temperatures during deposition, but the sub-units will stay in place, aligned to the substrate.
  • These stencils with sub-units as described above can be used in different lithography processes such as for example stencil lithography, ion beam lithography, laser irradiation, ion implantation, proton lithography, or plasma etching.
  • the flexible bodies can be shaped in such a way that the sub-unit is protruding from the stencil surface defined by the rigid stencil frame.
  • the protruding sub-unit can be achieved e.g. by deposition of a stressed metal film on the micromechanical suspensions/springs, by etching back the surface of the rigid stencil frame, or by deposition of the flexible body on an inclined sacrificial layer.
  • the protruding sub-units can then adjust themselves to the curves of a large area substrate (out-of-plane self- alignment), bringing them in close contact with the substrate surface (see figure 5).
  • the flexible body can also be connected to a holder as sub-unit instead of directly to a stencil membrane.
  • This holder could have simply the shape of a tray or frame in which a small sized stencil can then be placed. This means that the system of holders, flexible bodies, and the rigid stencil frame can be fabricated independently from the stencils. This separates the more complex fabrication steps from the simple stencil fabrication process. In case of stencil damage or of the need to alter locally stencil aperture designs, only a small stencil needs to be replaced in the corresponding holder instead of the need for fabrication of a completely new full-wafer stencil.
  • the stencil 1 comprises at least a stencil frame 2 with an opening 3 and a sub-unit 4 with a sub-unit stencil in said opening 3.
  • the sub-unit 4 is attached to the frame 2 through flexible means 5 allowing the sub-unit 4 to be moved relatively to the frame 2.
  • the sub-unit 4 is displaced at least in the Z (vertical) direction with respect to the frame 2 to come close to the surface of the substrate 6.
  • additional means 7 used to maintain locally the sub-unit 4 in position.
  • said additional means may include laser welding, thin resist structures, glue, electrostatic or magnetic forces.
  • FIG 4A As illustrated in figure 4B (in which the same elements are identified by identical references), the configuration of figure 4A allows a relative movement between the frame 2 and the sub-unit 4 without relative movement between the sub-unit 4 and the substrate 6.
  • Figure 5 illustrate a general lateral cut view of the situation of a large stencil 8, where the surface of the substrate 9 is not planar.
  • several sub-units 10 are attached to the stencil frame 8 through flexible means 11, and if the sub-units 10 protrude from the mask surface, it is possible to follow the surface with the individual successive neighbouring sub-units 10 without acting on the frame 8 but only on using the distance between the substrate and the frame 8 by self adjustment of the sub-units 10.
  • the holder may be formed by a sub- unit frame that is attached to the stencil frame by the disclosed flexible means 11 (springs or membrane) and a small stencil is mounted in the frame.
  • the sub-units 10 comprise a holder 10' (or sub-unit frame) and a small stencil 13 which contains the apertures for the deposition.
  • the advantage of this configuration is that the small stencils 13 may be changed individually (in case of defect or change of design) and the holders 10' remain in position in the stencil frame.
  • the holder 10' may have any shape, for example a shape corresponding to the shape of the opening of the stencil frame 2 or 8.
  • the small stencil 13 is attached to the holder 10' by mechanical means (springs or clamps) or by a temporary adhesive layer (such as glue or monolayer of polymer).
  • a temporary adhesive layer such as glue or monolayer of polymer.
  • Figures 4A, 4B and 5 thus illustrate an example of a patterning system using the principle of the present invention with a stencil mask 1 and a substrate 6, 9 on which the deposition has to take place according to the principle exposed in the present application.
  • Figures 6 to 8 illustrates several embodiments of possible flexible means.
  • the flexible means are made of four lateral springs 12 each connecting one side of the sub-unit 4 to the inner side of the opening of the frame 2.
  • the sub-unit further comprises the sub stencil 13 used for the deposition attached to a holder 10'.
  • this design of flexible means may induce a rotation of the sub-unit when displaced vertically (perpendicularly to the plane of the figure), it may be useful to anticipate this rotation in the design of the openings of the stencil to compensate this rotation.
  • this configuration comprises a holder 10', it is possible to avoid the use of such holder 10' and attached the membrane 13 directly to the flexible means 14.
  • the principle of the flexible means is similar to that of figure 6 with lateral springs 15. These springs have a different shape and avoid a rotation of the sub-unit when it is displaced vertically (perpendicularly to the plane of the figure).
  • the flexible means are formed by a flexible membrane 15 which allows a relative displacement between the sub-unit 4 with the stencil 13 and the frame 2, according to the principle of the present invention.
  • the membrane is possibly made of an elastomeric material. Typical materials include for example polyimide or PDMS.
  • the material is preferably spin coated to a very thin layer and chemical adhesive forces between the surfaces maintain the membrane 15 in position.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un masque stencil diminuant les effets thermiques lors de l'alignement entre le stencil et le substrat, et réduisant la présence globale d'un espace entre le stencil et le substrat. En outre, cette conception permet un échange aisé des stencils, rendant les altérations locales des ouvertures de stencil possibles sans avoir à fabriquer un stencil totalement neuf.
PCT/IB2007/050721 2006-03-03 2007-03-05 Masque stencil destiné à une reproduction précise de motif WO2007099518A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IBPCT/IB2006/050676 2006-03-03
IB2006050676 2006-03-03

Publications (1)

Publication Number Publication Date
WO2007099518A1 true WO2007099518A1 (fr) 2007-09-07

Family

ID=38180139

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2007/050721 WO2007099518A1 (fr) 2006-03-03 2007-03-05 Masque stencil destiné à une reproduction précise de motif

Country Status (1)

Country Link
WO (1) WO2007099518A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2161043A1 (fr) * 2008-09-05 2010-03-10 Ecole Polytechnique Federale De Lausanne (Epfl) Dispositif médical revêtu et procédé de revêtement d'un dispositif médical

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0364747A1 (fr) * 1988-10-03 1990-04-25 International Business Machines Corporation Monture réutilisable pour un dispositif d'évaporation
EP1209522A2 (fr) * 2000-11-28 2002-05-29 Lg Electronics Inc. Masque pour la fabrication de panneaux d'affichage
EP1229144A2 (fr) * 2001-01-31 2002-08-07 Toray Industries, Inc. Masque intégré et méthode et appareillage utilisant ce masque pour la production d'un dispositif électrolumiscent organique
US20040020435A1 (en) * 2001-08-24 2004-02-05 Terunoa Tsuchiya Multi-face forming mask device for vacuum deposition
EP1391783A2 (fr) * 2002-08-01 2004-02-25 Eastman Kodak Company Méthode et appareil pour réaliser un réseau de masques de projection
US20040202821A1 (en) * 2003-03-27 2004-10-14 Samsung Sdi Co., Ltd. Deposition mask for display device and method for fabricating the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0364747A1 (fr) * 1988-10-03 1990-04-25 International Business Machines Corporation Monture réutilisable pour un dispositif d'évaporation
EP1209522A2 (fr) * 2000-11-28 2002-05-29 Lg Electronics Inc. Masque pour la fabrication de panneaux d'affichage
EP1229144A2 (fr) * 2001-01-31 2002-08-07 Toray Industries, Inc. Masque intégré et méthode et appareillage utilisant ce masque pour la production d'un dispositif électrolumiscent organique
US20040020435A1 (en) * 2001-08-24 2004-02-05 Terunoa Tsuchiya Multi-face forming mask device for vacuum deposition
EP1391783A2 (fr) * 2002-08-01 2004-02-25 Eastman Kodak Company Méthode et appareil pour réaliser un réseau de masques de projection
US20040202821A1 (en) * 2003-03-27 2004-10-14 Samsung Sdi Co., Ltd. Deposition mask for display device and method for fabricating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2161043A1 (fr) * 2008-09-05 2010-03-10 Ecole Polytechnique Federale De Lausanne (Epfl) Dispositif médical revêtu et procédé de revêtement d'un dispositif médical
WO2010026557A3 (fr) * 2008-09-05 2010-08-19 Ecole Polytechnique Federale De Lausanne (Epfl) Dispositif médical revêtu et procédé de revêtement d’un dispositif médical destiné à réduire la fibrose et la formation de capsules

Similar Documents

Publication Publication Date Title
KR102307023B1 (ko) 기판, 기판 홀더, 기판 코팅 장치, 기판 코팅 방법 및 코팅 제거 방법
JP4459194B2 (ja) リソグラフィ装置及びデバイス製造方法
KR101489521B1 (ko) 홀딩 장치, 노광 장치, 노광 방법 및, 디바이스 제조 방법
JP2011029641A (ja) インプリントリソグラフィ
US20120297509A1 (en) Massively parallel lithography with two-dimensional pen arrays
JPH09240125A (ja) 物品の面をスタンピングするための装置および方法
Van Den Boogaart et al. Deep-ultraviolet–microelectromechanical systems stencils for high-throughput resistless patterning of mesoscopic structures
CN104620352A (zh) 标记形成方法和器件制造方法
Kim et al. All-photoplastic microstencil with self-alignment for multiple layer shadow-mask patterning
Brugger et al. Self-aligned 3D shadow mask technique for patterning deeply recessed surfaces of micro-electro-mechanical systems devices
US7557044B2 (en) Nanomachined mechanical components using nanoplates, methods of fabricating the same and methods of manufacturing nanomachines
Van Den Boogaart et al. Corrugated membranes for improved pattern definition with micro/nanostencil lithography
WO2007099518A1 (fr) Masque stencil destiné à une reproduction précise de motif
KR20220154695A (ko) 대상물 홀더, 툴 및 대상물 홀더를 제조하는 방법
JP2022544905A (ja) 基板ホルダ、リソグラフィ装置、及び方法
Guo et al. Nanostenciling for fabrication and interconnection of nanopatterns and microelectrodes
CN111479947A (zh) 使用通过被定位的阴影掩模进行气相沉积的制造工艺
JP2002305138A (ja) 露光装置および露光方法
JP4074224B2 (ja) 真空装置及び電子ビーム近接露光装置
WO2000067291A2 (fr) Modele microfabrique pour calibrations de faisceaux a multiples particules chargees et litographie de faisceaux a particules chargees protegees
KR20220124089A (ko) 척, 기판 유지장치, 기판 처리장치, 및 물품의 제조방법
Malek et al. Fast prototyping of high-aspect ratio, high-resolution X-ray masks by gas-assisted focused ion beam
Ali et al. Selective Surface Metallization of Single Crystal Silicon Nanowires via Stencil Lithography
US20130250271A1 (en) Stage assembly with secure device holder
Venstra et al. Photolithography on bulk micromachined substrates

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 07713200

Country of ref document: EP

Kind code of ref document: A1