WO2007096995A1

WO2007096995A1 - Rapid heat treatment equipment

Info

Publication number: WO2007096995A1
Application number: PCT/JP2006/303466
Authority: WO
Inventors: Sunil Wickramanayaka
Original assignee: Canon Anelva Corporation
Priority date: 2006-02-24
Filing date: 2006-02-24
Publication date: 2007-08-30

Abstract

[PROBLEMS] To provide rapid heat treatment (RTP) equipment for use in semiconductor industry in fabrication of a semiconductor device in which accurate temperature control performance and uniformity over a wide substrate can be attained by improving conversion efficiency of power into IR radiation for heating a film deposited on a substrate. [MEANS FOR SOLVING PROBLEMS] The RTP equipment comprises a chamber having a gas inlet and a gas outlet, a substrate holder provided in the chamber, and an infrared light emitting diode or an infrared laser diode provided in the chamber. A substrate arranged on the substrate holder is heated to a high temperature with infrared rays emitted from the infrared light emitting diode or an infrared laser diode.

Description

Specification

Rapid heat treatment equipment

Technical field

[0001] The present invention relates to a rapid thermal processing apparatus used in the semiconductor industry in the manufacture of semiconductor devices.

Background art

[0002] Rapid thermal processing (hereinafter referred to as "RTP") is a film force that is deposited on a substrate in a chamber under a controlled gas mixture and pressure. In between, it is heated to a high temperature, and then the high temperature is maintained for a few seconds, typically a few seconds not exceeding 60 seconds. This process can be an important step in fabricating semiconductor devices on Si and other substrates. The heated film deposited on the substrate is then cooled.

[0003] RTP has been implemented for many different reasons. The first reason is to proceed with a chemical reaction process such as RTP oxide under an oxygen gas atmosphere. The second reason is to mix the different thin films stacked by a temperature melting process to make the different thin films stacked into one uniform composition. The third reason is to heat a pre-formed film and rearrange the atoms in the film to create a stable state. The fourth reason is to remove unnecessary gaseous substances adsorbed in the membrane.

[0004] At present, there are various forms of RTP devices. One of these devices is shown in Figure 9. Fig. 9 is a cross-sectional view of a conventional RTP apparatus. This apparatus has a gas inlet 59 and a gas outlet 55, and is composed of a chamber called an RTP chamber. A substrate holder 61, which is supported by the shaft 60 !, is provided in the chamber. A substrate carry-in Z carry-out port 54 is provided on the chamber wall 58. An incandescent infrared (hereinafter “IR”) lamp 51 connected to electrical connection 57 and made of heated filament becomes the IR radiation source! A quartz plate 52 is usually placed between the IR lamp 51 and the substrate 53 placed on the substrate holder 61. IR radiation passes through the quartz plate 52. Furthermore, the quartz plate 52 has an IR lamp Since it acts as a vacuum shield between the assembly and the RTP chamber, the lower part of the RTP chamber is evacuated to a low pressure. Since the shape of the IR lamp 51 shown in FIG. 9 is circular, a tube-shaped IR lamp or other different shapes can be used. The electrical connection 57 and the IR lamp 51 are surrounded by an insulator 56.

[0005] Almost all incandescent IR lamps have low efficiency in converting power into infrared radiation. This is because much of the power is used to heat the coil to a high temperature. The efficiency of converting power to visible light was measured in lumens / watt (lumen Z watts) and a comparison is shown in Figure 10. As clearly shown, light emitting diodes (hereinafter “LEDs”) are nearly 10 times more efficient. Therefore, using an IR lamp to heat the substrate in an RTP device is less efficient, uses more energy, and results in higher running costs.

[0006] The diameter of each IR lamp 51 of the conventional RTP apparatus shown in FIG. 9 is very large, for example, 50 mm. In addition, the IR lamps 51 are usually separated by more than 10 mm. Because of these large sizes, the intensity uniformity of IR radiation across the quartz plate 52 is extremely non-uniform. Therefore, the IR radiation from adjacent IR lamps 51 affects each other and the temperature distribution across the entire surface of the substrate 53 is completely uniform between the IR lamp 51 and the substrate 53. It is necessary to keep a large distance. Because of this large distance between the IR lamp 51 and the substrate 53, much of the IR radiation is consumed and the power usage efficiency is reduced.

Furthermore, because of the large size described above, it has been difficult and powerful to obtain a highly uniform temperature distribution on the substrate surface. For example, many conventional RTP devices as shown in Fig. 9 have a non-uniformity of ± 5 ° C around the set temperature. If the set temperature is high, this non-uniformity will also be high.

Patent Document 1: JP 2001-118803

Disclosure of the invention

Problems to be solved by the invention

[0008] The present invention contributes to the examination of the above-mentioned problems. The object of the present invention is to convert the power used to heat the film deposited on the substrate into IR radiation. Is to provide a rapid thermal processing equipment (RTP equipment) that can achieve more accurate temperature control performance and uniformity over a wide range of substrates.

Means for solving the problem

To achieve the above object, the present invention provides a chamber having a gas inlet and a gas outlet, a substrate holder provided in the chamber, an infrared light emitting diode or an infrared laser provided in the chamber. A rapid heat treatment apparatus comprising a diode, wherein the substrate is disposed on a substrate holder, and the substrate is an infrared light emitting diode, and is heated to a high temperature by infrared light emitted from an infrared laser diode. Propose.

[0010] This RTP apparatus is used for RTP used in the semiconductor industry in the manufacture of semiconductor devices. Usually, the rapid heating process by the RTP apparatus is performed in a chamber under a controlled mixed gas, for example, an oxygen gas atmosphere and pressure.

[0011] In the RTP device of the present invention, a solid state IR LED or a solid state IR laser diode, that is, an IR LED or an IR laser that does not use a liquid or gaseous substance. The diode can be used as an IR LED or IR laser diode, respectively.

In the present invention, the infrared light emitting diode or the infrared laser diode can be arranged so that the light emitting surface formed by the light emitting surfaces is a plane parallel to the substrate surface. According to this configuration, the IR radiation from each IR diode or IR laser diode reaches the substrate surface at approximately 90 ° C.

Instead, in the present invention, the infrared light emitting diode or the infrared laser diode has a dome shape in which the light emitting surface formed by the light emitting surface faces the substrate surface. It can also be arranged in a plane.

[0014] In the present invention, the infrared light emitted from the infrared light emitting diode or the infrared laser diode is connected to one end of each infrared light emitting diode or each infrared laser diode. It can also be arranged such that the end terminates near the substrate and is transmitted through the optical fiber, with the other end of the optical fiber forming the light emitting surface. According to this configuration, IR emission from each IR diode or IR laser diode is possible. The radiation is transmitted to the substrate and Z or near the substrate surface by an optical cable such as an optical fiber.

In this embodiment, the other end of the optical fiber can be arranged so that the light emitting surface formed by the other end of the optical fiber is a plane parallel to the substrate surface. Alternatively, the other end of the optical fiber may be arranged so that the light emitting surface formed by the other end of the optical fiber is a domed surface facing the substrate surface.

[0016] Also, each IR LED is! /, And in these embodiments where IR radiation from the IR laser diode is transmitted through the optical fiber to the substrate and Z or near the substrate surface, each IR LED is! The IR laser diode can be placed inside or outside the chamber.

[0017] In each RTP apparatus of the present invention described above, the substrate holder can be rotated during the rapid heating process.

[0018] Further, in each of the RTP devices of the present invention described above, the substrate can be placed on three or several needle pins fixed to the substrate holder.

[0019] Instead of this, in each of the RTP devices of the present invention described above, there are three, which are fixed to the bottom plate of the chamber, so that the substrate is placed on several needle pins. be able to.

Furthermore, in each RTP device of the present invention described above, a light emitting surface can be placed on the upper side of the substrate and Z or the lower side of the substrate. According to this embodiment, the substrate is heated from the upper side, the lower side, or both sides.

[0021] According to the RTP device of the present invention described above, the RTP device is smaller in size than the radiation power of the incandescent IR lamp used in the conventional RTP device shown and described in FIG. The array power of many infrared light emitting diodes (IR LEDs) or IR laser diodes is also high. The array of infrared light emitting diodes (IR LEDs) or IR laser diodes is placed on the substrate surface and Z or just below the substrate V, and is deposited on the substrate. The conversion efficiency of the power used to heat the IR to IR radiation has been improved, resulting in more accurate temperature control performance and uniformity across a wide substrate. IR LED and IR laser diodes are deposited on the substrate This is because the conversion efficiency of the power for heating the film to IR radiation is very high, and the RTP device of the present invention consumes less energy.

The invention's effect

[0022] According to the present invention, a rapid heat treatment apparatus (RTP apparatus) based on an IR LED or an IR laser diode has been proposed. According to this RTP apparatus, the conversion efficiency of the power used to heat the V film deposited on the substrate to IR radiation is improved, and more accurate temperature control performance, Wide and uniform across the substrate.

BEST MODE FOR CARRYING OUT THE INVENTION

[0023] Preferred embodiments of the present invention are described in detail in the following examples, using the accompanying drawings.

Example 1

Embodiment 1 of the present invention will be described with reference to FIGS.

FIG. 1 is a cross-sectional view showing an RTP device according to an embodiment of the present invention.

This apparatus is composed of a chamber 25 having a gas inlet 3 and a gas outlet 4.

This chamber 25 is called the RTP chamber. A substrate holder 2 having a substrate holding portion 8 and supported by a shaft 23 is disposed in the chamber 25. A substrate carry-in Z carry-out port 19 is provided in the chamber wall 16.

In this embodiment, the substrate 5 to be rapidly heated is supported by the needle pins 9. The needle pin 9 can be fixed on the substrate holding part 8. Alternatively, although not shown, the needle pin 9 can be fixed on the bottom plate of the chamber 25. Further, the needle-like pins 9 are moved so as to move up and down from the substrate holder 2 or the bottom plate of the chamber 25 by themselves.

[0028] This RTP device includes a plurality of rows of IR LEDs la, lb. Multiple IR LEDla, lb are tightly packed, thus forming IR diode 1. The IR LED can be replaced by an IR laser diode consisting of multiple IR laser diodes. Therefore, in this specification, the IR LED composed of a plurality of IR LEDs la and lb and the IR laser diode composed of a plurality of IR laser diodes la and lb are simply referred to as IR diode 1.

A cooling plate 22 is placed on the IR diode 1 connected to the electrical connection 20.

As shown in Fig. 1, the space between IR diode 1 and the inner wall of chamber 25 is filled with insulator 21. ing.

[0030] The plurality of IR LED la, lb or IR laser diodes la, lb are arranged such that a light emitting surface is formed by their light emitting surfaces. As shown in FIG. 1, the light emitting surface formed by the light emitting surfaces of a plurality of IR LE Dla, lb or IR laser diodes la, lb is the same surface parallel to the surface of the substrate 5 to be processed.

[0031] The array of IR diodes 1 can take a circular shape, a rectangular shape, or other shapes depending on the shape of the substrate 5 to be processed. In Figure 2, the array of IR diodes 1 is circular.

[0032] The dimensions of the array of IR diodes 1 are larger than the dimensions of the substrate. For example, if the substrate processed by the RTP device is a 200 mm Si substrate, the IR diode 1 row dimension would be 25 Omm. The dimensions of a single IR LEDla, lb or IR laser diode la, lb are not critical, but are preferably smaller. In this way, a larger number of IR LED la, lb or IR laser diodes la, lb can be arranged in the arrangement region shown in FIG. The cross-sectional shape of the IR diodes la and lb is also not important.

FIG. 3 is a perspective view of an IR LED diode la that also has a force with an IR light emitting semiconductor 6, a lens 7 that parallels IR radiation 12, and an electrical connection portion 13 that is connected to an electrical connection portion 20.

[0034] The energy of IR radiation from each IR LEDla, lb can vary from a few mW to a few W, which is not important. Usually the IR LEDla, lb or IR laser diode la, lb, which has the highest radiant energy, is used.

[0035] At present, IR LED la, lb or IR laser diode la, lb with radiation energy exceeding 50 W is commercially available. In this embodiment, these IR LEDla, lb or IR laser diode la, lb is used.

[0036] IR LEDs or IR laser diodes generally have a high efficiency in converting power into IR radiation. This is because IR light is generated as a result of electron-hole pair recombination in the active region between the p-type semiconductor and the n-type semiconductor. This is a cold process compared to incandescent lamps. For example, the power required when illuminating a given area with an IR LED or IR laser diode is one tenth of the power required for an incandescent lamp. [0037] The substrate holder 8 of the substrate holder 2 is usually formed of an insulator, for example, quartz.

Although not shown, the substrate 5 can be placed on the substrate holder 2 such that the back surface of the entire substrate 5 is in contact with the substrate holder 8.

Further, as shown in FIG. 1, the substrate 5 can be placed on three or several pins 9 made of an insulating material, for example, quartz. In this embodiment, since the substrate 5 is placed on three or several pins 9, the loss of heat from the substrate 5 to the substrate holder 2 can be reduced.

In general, the substrate holder 2 is fixed to the bottom plate of the chamber 25. Therefore, when the substrate 5 is placed or removed, the substrate support pin 9 moves to receive the substrate 5 from the robot arm or to place the substrate 5.

However, as shown by the arrow 10 in FIG. 1, the hard ware can be configured so that the substrate holder 2 moves up and down.

[0042] Further, during the RTP process, the substrate holder 2 preferably rotates as indicated by arrow 11 in FIG. The mechanism by which the substrate holder 2 rotates is not shown. An example of the rapid heating process performed by the RTP apparatus described above is as follows.

First, the substrate 5 is placed on the substrate holder 2. Preferably, it is placed on three pins 9. The pressure in the chamber 25 is adjusted to a desired value using a desired gas or mixed gas. Next, the substrate 5 is lifted upward to approach the light emitting surface formed by the light emitting surface of the plurality of IR diodes la and lb. Thus, the distance between the surface of the substrate 5 and the light emitting surface of the IR diode 1 becomes very short. For example, lmn! ~ 3mm. The substrate 5 is moved by moving the entire substrate holder 2 or only the substrate support pins 9.

The IR diode 1 is supplied with electric power for radiating IR to heat the substrate 5.

[0045] The heating rate (hereinafter referred to as "ramp rate") is controlled by controlling the current Z voltage characteristics supplied to the IR diode or by controlling the IR diode in the Nors mode.

[0046] Continuous IR radiation gives the highest amp rate.

[0047] The ramp rate can be reduced by introducing an appropriate IR radiation pulse. For example, The ramp rate can be reduced by increasing the loose-off time.

[0048] Further, in order to more accurately control the set temperature, the IR diode is controlled in a pulse mode. As mentioned in the prior art section, an important feature compared to the heating mechanism with resistive heating coils is that there is no IR radiation when the diode is turned off. Therefore, the set temperature value is accurately controlled, and an allowable error around the value is reduced. If a resistance coil is used, as in a conventional RTP device, the heated coil slowly cools down, even if the current is cut off, and the IR radiation does not stop suddenly. This affects the control of the set temperature value and its tolerance.

[0049] Preferably, the substrate 5 is rotated as indicated by arrow 11 during the RTP process to improve temperature uniformity at the surface of the substrate 5.

[0050] As described above, according to the RTP device of the present invention, the distance between the IR-radiated surface and the surface of the substrate 5 is, for example, lmn! ~ 3mm, very small. Therefore, IR radiation can be used effectively with less stray IR radiation.

[0051] During operation, the current Z voltage characteristics of each IR LED or IR laser diode are independently controlled. Therefore, IR emission from each IR LED or IR laser diode is controlled independently. This facilitates very accurate control of the substrate temperature uniformity.

However, to control each IR LED or IR laser diode independently, an expensive and complicated electric circuit is required. Therefore, several IR LEDs or IR laser diodes are combined in close proximity to form one set 14 as shown in FIG. 4, and the same current is applied to each IR LED or IR laser diode in one set 14. A voltage can be supplied. In this way, each set 14 of IR LED la, lb or IR laser diode la, lb must be controlled, which is a simpler electrical circuit than the one described above.

[0053] However, there is a trade-off between temperature uniformity and simplification of the power supply circuit.

[0054] In order to assemble several IR LEDla, lb or IR laser diode la, lb into one set 14, separate IR LEDs or IR laser diodes can be used, or several IR LED la, lb or IR laser diode la, lb It can also be assembled directly on the semiconductor substrate with the air circuit.

Example 2

[0055] Embodiment 2 of the present invention will be described with reference to FIG.

[0056] In this embodiment, the substrate 5 is arranged on both sides of the substrate 5, and using a row of IR diodes 1

, Its both side force is heated.

The row form of each IR diode 1 is the same as that described in the first embodiment.

[0058] In this embodiment, there is no substrate holder. The substrate 5 is placed on the quartz frame 15. The quartz frame 15 can be an integrated part of the substrate transfer robot, or can be fixed to the chamber wall 16 as appropriate.

[0059] The method of fixing the quartz frame 15 can be changed to another method, and will not be described in detail here.

[0060] Except for the changes described above, all other hardware and operation processes are the same as described in Example 1. Therefore, similar parts are denoted by similar reference numerals. Since these parts are common to the first embodiment and the second embodiment, they are not described here in order to avoid duplication. In this embodiment, since heating is performed from both sides of the substrate 5, a faster heating gradient and a higher temperature can be obtained.

Example 3

Example 3 will be described with reference to FIG. IR LEDs 1 a, lb or IR laser diode la, lb force constituting the IR diode 1 are arranged so as to form a light emitting surface by their light emitting surface, and the light emitting surface faces the surface of the substrate 5 A dome-shaped plane is formed.

[0062] Due to the dome shape, the light emitting surface area is increased as compared to the configuration in which the dome shape is arranged in parallel as described in the first embodiment.

[0063] Therefore, more IR LED la, lb or IR laser diode la, lb can be arranged. That is, it is advantageous for higher ramp rate and higher temperature on the substrate surface.

[0064] Except for the changes described above, all other hardware and operation processes are the same as described in the first embodiment. Therefore, attach similar reference numerals to similar parts. Yes. Since these parts are common to the first embodiment and the third embodiment, they are not described here in order to avoid duplication.

Example 4

Example 4 will be described with reference to FIG. IR radiation emitted from the IR diode 1 is transmitted via the optical cable 17.

[0066] As shown in FIG. 7, the IR diode 1 is composed of a plurality of IR LEDla, lb! /, And the IR laser diode la, lb forms a light emitting surface by their light emitting surfaces. The light emitting surface forms a dome-shaped plane facing the surface of the substrate 5.

[0067] One end of the optical cable 17 is connected to each IR LEDla, lb or IR laser diode la, 1b. The other end of the optical cable 17 terminates near the substrate 5, for example, just above the surface of the substrate 5. The distance between the other end of the optical cable 17 and the surface of the substrate 5 is set to be very short, for example, 1 mm to 3 mm. As shown in FIG. 7, the other end of the optical cable 17 is arranged to form a light emitting surface. The light emitting surface is in the same plane parallel to the surface of the substrate 5.

Although not shown, the other end of the optical cable 17 forms a light emitting surface, and the light emitting surface force is formed so as to form a dome-shaped plane facing the surface of the substrate 5 as shown in FIG. Click here.

[0069] Although not shown, a plurality of IR LED la, lb or IR laser diode la, lb force constituting the IR diode 1 are arranged so as to form a light emitting surface by their light emitting surfaces. The light emitting surface can also be in the same plane parallel to the surface of the substrate 5 being processed. One end of the optical cable 17 is connected to each IR LEDla, lb or IR laser diode la, lb, and the other end is terminated near the substrate 5, for example, just above the surface of the substrate 5. ! /

[0070] The optical cable 17 is a flexible cape that can transmit with reduced consumption of IR radiation.

Further, the cross section of the optical cable 17 in the vicinity of the IR LED la, lb or the IR laser diode la, lb is wider than the other end that terminates just above the surface of the substrate 5. IR L EDla, lb or IR laser diode la, lb wide cross section near IR LEDla, lb Or it is advantageous to extract more IR radiation emitted from the IR laser diode la, lb. Similarly, a narrow cross section near the substrate is advantageous for coupling a greater number of optical cables 17 in a surface area just above the surface of the substrate 5.

[0072] The configuration of the RTP device shown in FIG. 7 is such that more IR radiation emitted from each IR LEDla, lb or IR laser diode la, 1b is near the surface of the substrate 5, eg, just above the surface of the substrate 5. As compared with the first embodiment, a larger number of IR LEDla, lb or IR laser diodes la, lb can be used. Thus, compared to Example 1, this configuration provides more heating power, thereby achieving a higher ramp rate and higher substrate surface temperature.

[0073] Except for the changes described above, all other hardware and operation processes are the same as described in the first embodiment. Therefore, similar parts are denoted by similar reference numerals. Since these parts are common to the first embodiment and the third embodiment, they are not described here in order to avoid duplication.

Example 5

Example 5 will be described with reference to FIG. IR LED la, lb or IR laser diode la, lb force Located in a separate room outside chamber 25. The IR radiation emitted from each IR LED la, lb or IR laser diode la, lb is transmitted via the optical cable 17.

[0075] Not all optical cables 17 are represented in FIG. 8 in order to facilitate the drawing. The position or angle of IR LEDla, lb or IR laser diode la, lb is not important.

[0076] An important difference between Examples 4 and 5 is that, in Example 4, IR diode 1 composed of a plurality of IR LED la, lb or IR laser diode la, lb is provided in chamber 25. In Example 5, the IR diode 1 composed of a plurality of IR LEDla, lb or IR laser diode la, lb is arranged outside the chamber 25. .

[0077] One end of the optical cable 17 is connected to each IR LEDla, lb or IR laser diode la, 1b. The other end of optical cable 17 terminates just above the surface of substrate 5. And The optical cable 17 terminates just above the surface of the substrate 5 and the other end forms a plane parallel to the surface of the substrate 5.

[0078] Except for such changes, all other hardware and operation processes are the same as those described in the first and fourth embodiments. Therefore, similar parts are denoted by similar reference numerals. Since these parts are common to the first, fourth and fifth embodiments, they are not described here in order to avoid duplication.

[0079] According to this embodiment, a large and high-capacity IR LED or IR laser diode can be used. Thus, the heating rate and higher reachable temperature can be increased.

[0080] The present invention is not limited to the above-described preferred embodiments, but can be modified in various forms within the technical scope defined by the appended claims and equivalents thereof.

Brief Description of Drawings

[0081] FIG. 1 is a cross-sectional view of a preferred embodiment of the present invention.

FIG. 2 is a bottom view of an example array of IR LEDs or IR laser diodes.

FIG. 3 is a perspective view of an example of an IR LED.

[FIG. 4] FIG. 4 is a bottom view of another example of an IR LED or IR laser diode array in which several IR LEDs or IR laser diodes are assembled.

FIG. 5 is a cross-sectional view of another preferred embodiment of the present invention.

FIG. 6 is a cross-sectional view of another preferred embodiment of the present invention.

FIG. 7 is a cross-sectional view of another preferred embodiment of the present invention.

FIG. 8 is a cross-sectional view of another preferred embodiment of the present invention.

FIG. 9 is a sectional view of a conventional RTP apparatus.

FIG. 10 is a diagram showing the efficiency of converting electric power into visible light.

Explanation of symbols

[0082] 1 IR LED or IR laser diode array

la, lb IR LED or IR laser diode

2 Board holder Gas inlet

Gas outlet

Substrate

IR light emitting semiconductor lens

Substrate holder

Needle pin

Parallel IR radiation Electrical connection

A set of IR diodes Quartz frame Chamber wall

Optical cable Board loading / unloading Electrical connection Insulator

Shaft

Channo

Claims

The scope of the claims

[1] a chamber having a gas inlet and a gas outlet;

A substrate holder provided in the chamber;

A rapid heat treatment apparatus comprising an infrared light emitting diode or an infrared laser diode provided in a chamber,

The substrate placed on the substrate holder is an infrared light emitting diode, or is heated to a high temperature by the infrared light emitted from the infrared laser diode.

Rapid heat treatment equipment.

[2] The rapid heating apparatus according to claim 1, wherein the infrared light emitting diode or the infrared laser diode is arranged so that a light emitting surface formed by the light emitting surface thereof is a plane parallel to the substrate surface. .

[3] The infrared light emitting diode or the infrared laser diode is arranged so that a light emitting surface formed by the light emitting surface thereof is a dome-shaped surface facing the substrate surface, V, Rapid heat treatment equipment.

[4] Infrared light emitting diode or infrared laser diode force The emitted infrared light is transmitted through an optical fiber with one end connected to each infrared light emitting diode or each infrared laser diode and the other end terminated near the substrate. 2. The rapid heating process according to claim 1, wherein the other end of the optical fiber is arranged so that a light emitting surface formed by the other end of the optical fiber is a plane parallel to the substrate surface. apparatus.

[5] Infrared light emitting diode or infrared laser diode force The emitted infrared light passes through an optical fiber with one end connected to each infrared light emitting diode or each infrared laser diode and the other end terminating near the substrate. The other end of the optical fiber is arranged so that the light emitting surface formed by the other end of the optical fiber is a dome-shaped surface facing the substrate surface. Rapid heat treatment equipment.

6. The rapid heating apparatus according to claim 4 or 5, wherein the infrared light emitting diode or the infrared laser diode is disposed inside or outside the chamber.

[7] The substrate holder according to any one of claims 1 to 6, wherein the substrate holder rotates during the rapid heating process. Rapid heat treatment equipment.

[8] The rapid heating apparatus according to any one of [1] to [7], wherein the substrate is placed on three or a large number of needle pins fixed to the substrate holder.

[9] The rapid heating apparatus according to any one of [1] to [7], wherein the substrate is placed on three or many needle pins fixed to the bottom plate of the chamber.

[10] The rapid heating apparatus according to any one of [2] to [6], wherein the light emitting surface is placed on the upper side of the substrate and on the lower side of the substrate or Z.