WO2007083592A1

WO2007083592A1 - Substrate holding apparatus, exposure apparatus, and device production method

Info

Publication number: WO2007083592A1
Application number: PCT/JP2007/050402
Authority: WO
Inventors: Takeyuki Mizutani; Yuichi Shibazaki
Original assignee: Nikon Corporation
Priority date: 2006-01-17
Filing date: 2007-01-15
Publication date: 2007-07-26
Also published as: JPWO2007083592A1; TW200731032A

Abstract

A substrate holding apparatus (4T) has a base member (30), a support section (81) formed on the base member (30) and supporting a substrate (P), a peripheral wall formed on the base member (30) and surrounding the support section (81), a first region (31) provided in an annular shape on the base member (30), along the peripheral wall (33), the first region (31) forming a first gap (G1) between the first region and the back face of the substrate (P) supported by the support section (81), the first region (31) holding influent liquid (LQ) entering from between the substrate (P) supported by the support section (81) and the peripheral wall (33), the influent liquid (LQ) being held between the first region (31) and the substrate (P), and a second region (32) provided on the base member (30), inside the first region (31) relative to the peripheral wall (33), the second region (32) forming a second gap (G2) between the second region (32) and the back face of the substrate (P) supported by the support section (81), the second gap (G2) being greater than the first gap (G1).

Description

Specification

Substrate holding apparatus, exposure apparatus, and device manufacturing method

Technical field

The present invention relates to a substrate holding device that holds a substrate, and an exposure device that exposes the substrate through a liquid

And a device manufacturing method.

This application claims priority based on Japanese Patent Application No. 2006-008555 filed on Jan. 17, 2006, the contents of which are incorporated herein by reference.

Background art

In an exposure apparatus used in the photolithography process, an immersion type exposure apparatus that exposes a substrate through a liquid as disclosed in the following patent document is known!

Patent Document 1: Pamphlet of International Publication No. 99Z49504

Patent Document 2: Japanese Patent Application Laid-Open No. 2004-289127

Disclosure of the invention

Problems to be solved by the invention

[0003] If the liquid enters the back side of the substrate through a gap between the substrate and the substrate stage, and the liquid adheres to a predetermined region on the back side of the substrate, various problems may occur. . For example, if liquid that has entered the space on the back side of the substrate adheres to a predetermined region on the back side of the substrate, the substrate stage holder may not be able to hold the substrate satisfactorily. Or, when carrying out (unloading) a holder force substrate using a predetermined transport device, liquid may adhere to the transport device, or the liquid may splash on the transport path, which may increase damage. The

[0004] An object of the present invention is to provide a substrate holding apparatus and exposure apparatus that can prevent liquid from adhering to a predetermined region on the back surface of the substrate, and a device manufacturing method using the exposure apparatus.

Means for solving the problem

[0005] According to a first aspect of the present invention, there is provided a substrate holding apparatus for holding a substrate irradiated with exposure light through a liquid, the substrate being formed on the substrate, Support to support And a peripheral wall that is formed on the base material and surrounds the support part, and is provided annularly along the peripheral wall on the base material, and a back surface of the substrate supported by the support part and a first gap. A first region formed and held between the substrate and the substrate supported by the support portion between the substrate and the peripheral wall; and the first region with respect to the peripheral wall on the base material There is provided a substrate holding device including a rear surface of the substrate supported by the support portion and a second region forming a second gap larger than the first gear.

[0006] According to the first aspect of the present invention, it is possible to suppress the liquid from adhering to a predetermined region on the back surface of the substrate.

According to the second aspect of the present invention, the substrate holding device of the above aspect is provided, an immersion region is formed on the substrate held by the substrate holding device, and the liquid in the immersion region is passed through. An exposure apparatus for exposing the substrate held by the substrate holding apparatus is provided.

[0008] According to the second aspect of the present invention, it is possible to suppress the liquid from adhering to a predetermined region on the back surface of the substrate, so that the substrate can be well exposed.

According to the third aspect of the present invention, a device manufacturing method using the exposure apparatus of the above aspect is provided.

[0010] According to the third aspect of the present invention, a device can be manufactured using an exposure apparatus that can satisfactorily expose a substrate.

The invention's effect

[0011] According to the present invention, it is possible to suppress the liquid that has entered the back surface side of the substrate from adhering to a predetermined region on the back surface of the substrate, and to expose the substrate satisfactorily.

Brief Description of Drawings

FIG. 1 is a schematic block diagram that shows an exposure apparatus according to a first embodiment.

FIG. 2 is a side sectional view of the table according to the first embodiment.

FIG. 3 is a plan view of the table holding the substrate.

FIG. 4 is a plan view of the table with the substrate removed.

FIG. 5 is a plan view showing a state in which a substrate and a plate member are removed.

FIG. 6 is a side sectional view showing a main part of the table according to the first embodiment. FIG. 7 is a schematic diagram for explaining the operation of the table according to the first embodiment.

FIG. 8 is a schematic diagram for explaining a gas flow.

FIG. 9 is a schematic diagram for explaining a gas flow.

FIG. 10A is a diagram showing a state where the back surface of the substrate is held by the transfer device.

FIG. 10B is a diagram showing a state where the back surface of the substrate is held by the transfer device.

FIG. 11 is a schematic diagram for explaining a table according to the second embodiment.

FIG. 12 is a schematic diagram for explaining a table according to the third embodiment.

FIG. 13A is a schematic diagram for explaining the relationship between the angle and the liquid state.

FIG. 13B is a schematic diagram for explaining the relationship between the angle of the angle and the state of the liquid.

FIG. 14 is a schematic diagram for explaining a table according to the fourth embodiment.

FIG. 15 is a flowchart for explaining an example of a microdevice manufacturing process.

[0013] 1 ... Immersion system, 4 ... Substrate stage, 4T ... Table, 30 ... Base material, 31 ... First region, 32 ... Second region, 33 ... First peripheral wall, 33A ... First 1 upper surface, 41 ... 1st space, 81 ... support member, 8 1A ... 1st support member, 82A ... 2nd support member, 83 ... corner, 84 ... groove, 86, 86 '... side, EL ... exposure light, EX ... exposure device, G1 ... first gap, G2 ... second gap, LQ ... liquid, P ~ substrate

BEST MODE FOR CARRYING OUT THE INVENTION

[0014] Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The predetermined direction in the horizontal plane is the X-axis direction, the direction orthogonal to the X-axis direction in the horizontal plane is the Y-axis direction, and the direction orthogonal to the X-axis direction and the Y-axis direction (that is, the vertical direction) is the Z-axis direction. To do. The rotation (tilt) directions around the X, Y, and Z axes are the 0 X, 0 Y, and 0 Z directions, respectively.

[0015] <First embodiment>

A first embodiment will be described. FIG. 1 is a schematic diagram showing an exposure apparatus EX according to the first embodiment. FIG. In FIG. 1, the exposure apparatus EX exposes a mask stage 3 that can move while holding the mask M, a substrate stage 4 that can move while holding the substrate P, and the mask M held by the mask stage 3. Illumination system IL that illuminates with light EL, projection optical system PL that projects the pattern image of mask M illuminated with exposure light EL onto substrate P, and optical path space of exposure light EL near the image plane of projection optical system PL An immersion system 1 that forms an immersion area LR on the substrate P so as to fill K with liquid LQ, and a control device 7 that controls the operation of the entire exposure apparatus EX are provided. In addition, the exposure apparatus EX includes a transport apparatus 100 that can transport the substrate P to the substrate stage 4.

Here, the substrate includes a substrate such as a semiconductor wafer coated with a photosensitive material (photoresist). The substrate includes a substrate in which a film such as a protective film is formed on a photosensitive material. The mask includes a reticle on which a device pattern to be reduced and projected on a substrate is formed. In this embodiment, a force reflection type mask using a transmission type mask may be used as the mask.

The illumination system IL illuminates a predetermined illumination area on the mask M with exposure light EL having a uniform illuminance distribution. Illumination system IL force As exposure light EL emitted, for example, bright ultraviolet rays (g-line, h-line, i-line) emitted from mercury lamps and far ultraviolet light (DUV light) such as KrF excimer laser light (wavelength 248 nm), ArF excimer laser light (wavelength 193nm) and F laser light (wavelength 15)

2

Vacuum ultraviolet light (VUV light) such as 7 nm) is used. In the present embodiment, ArF excimer laser light is used as the exposure light EL.

The mask stage 3 is movable in the X axis, Y axis, and θ Z directions while holding the mask M by a mask stage driving device including an actuator such as a linear motor. The position information of mask stage 3 (and hence mask M) is measured by laser interferometer 3L. The laser interferometer 3L measures the position information of the mask stage 3 using a reflecting mirror 3K provided on the mask stage 3. The control device 7 controls the mask stage driving device based on the measurement result of the laser interferometer 3L, and controls the position of the mask M held by the mask stage 3.

Note that the reflecting mirror 3K may include not only a plane mirror but also a corner cube (retro reflector). Instead of fixing the reflecting mirror 3K to the mask stage, for example, a mask step The end surface (side surface) of the surface 3 may be mirror-finished to form a reflective surface. Further, the mask stage 3 may be configured to be capable of coarse and fine movement disclosed in, for example, Japanese Patent Laid-Open No. 8-130179 (corresponding US Pat. No. 6,721,034).

Projection optical system PL projects the pattern image of mask M onto substrate P at a predetermined projection magnification.

Projection optical system PL has a plurality of optical elements, and these optical elements are held by lens barrel PK. The projection optical system PL of the present embodiment is a reduction system whose projection magnification is, for example, 1Z4, 1/5, 1Z8, etc., and forms a reduced image of a mask pattern in a projection area conjugate with the illumination area described above. The projection optical system PL may be any of a reduction system, a unity magnification system, and an enlargement system. In the present embodiment, the optical axis AX of the projection optical system PL is parallel to the Z-axis direction. Further, the projection optical system PL may be any of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, and a catadioptric system that includes a reflective optical element and a refractive optical element. Further, the projection optical system PL may form either an inverted image or an erect image.

[0021] The substrate stage 4 includes a stage main body 4B, a table 4T mounted on the stage main body 4B, a first holder HD1 provided on the table 4T and detachably holding the substrate P, and a first holder HD1 A plate member T disposed so as to surround the periphery of the substrate P held by the substrate, and a second holder HD2 provided on the table 4T and detachably holding the plate member T.

[0022] The stage body 4B is supported in a non-contact manner on the upper surface (guide surface) of the base member BP by the air bearing 4A. The upper surface of the base member BP is substantially parallel to the XY plane, and the substrate stage 4 is movable on the base member BP in the XY direction.

[0023] The substrate stage 4 can be moved on the base member BP while the substrate P is held in the first holder HD1 by a substrate stage driving device including an actuator such as a linear motor. The substrate stage driving apparatus moves the stage body 4B on the base member BP in the X axis direction, the Y axis direction, and the θ Z direction, thereby moving the table 4T mounted on the stage body 4B in the X axis direction, A first drive system that can move in the Y-axis direction and θZ direction, and a second drive system that can move the table 4T in the Z-axis direction, 0 X direction, and 0 Y direction relative to the stage body 4B. ing.

[0024] The first drive system includes an actuator such as a linear motor. The second drive system is an actuator such as a voice coil motor interposed between the stage main body 4B and the table 4T. 4V and a measuring device (not shown) (not shown) that measures the driving amount of each actuator. The table 4T is supported on the stage body 4B by at least three actuators 4V. Each of the actuators 4V can drive the table 4T independently of the stage body 4B in the Z-axis direction. The control device 7 moves the table 4T in the Z axis direction, θ X direction, and θ Y direction with respect to the stage main body 4B by adjusting the driving amount of each of the three actuators 4V. As described above, the substrate stage drive apparatus including the first and second drive systems is capable of moving the table 4T of the substrate stage 4 on the X axis, Y axis, Z axis, 0 X, θ Y, and θ Z directions. It is possible to move in the direction of The control device 7 controls the substrate stage driving device to control the X axis, Y axis, Z axis, 0 X, 0 Y, and 0 Z directions of the surface of the substrate P held by the first holder HD1 of the table 4T. It is possible to control the position in the direction of 6 degrees of freedom.

[0025] The position information of the table 4T of the substrate stage 4 (H! /, The substrate P) is measured by the laser interferometer 4L. The laser interferometer 4L uses the reflecting mirror 4K provided on the table 4T to measure position information regarding the X axis, the Y axis, and the θZ direction of the table 4T. In addition, the surface position information (position information regarding the Z axis, ΘX, and ΘY directions) of the surface of the substrate P held by the first holder HD1 of the table 4T is a focus' leveling detection system (not shown). Detected by. The control device 7 controls the substrate stage driving device based on the measurement result of the laser interferometer 4L and the detection result of the focus' leveling detection system, and controls the position of the substrate P held by the first holder HD1. I do.

[0026] The focus' leveling detection system detects the tilt information (rotation angle) in the Θ X and Θ Y directions of the substrate by measuring the position information in the Z-axis direction of the substrate at each of the multiple measurement points. To do. Furthermore, for example, when the laser interferometer can measure the position information in the Z-axis, ΘX and ΘY directions of the substrate, the position information in the Z-axis direction can be measured during the substrate exposure operation. It is possible to control the position of the substrate P in the Z-axis, ΘX, and ΘY directions using the measurement results of the laser interferometer, at least during the exposure operation.

The immersion system 1 fills the optical path space K of the exposure light EL near the image plane of the projection optical system PL with the liquid LQ. The immersion system 1 includes a plurality of optical elements of the projection optical system PL. The optical path space K of the exposure light EL between the lower surface of the final optical element FL closest to the image plane of the projection optical system PL and the surface of the object disposed at a position facing the final optical element FL is defined as a liquid LQ. A liquid immersion region LR is formed on the object so as to fill. In this embodiment, water (pure water) is used as the liquid LQ.

In the present embodiment, the object that can be placed at a position facing the final optical element FL is the substrate P held by the substrate stage 4 (first holder HD1) and the substrate stage 4 (second holder HD 2). Including at least one of the plate members T held on the plate. In the following, the case where the substrate P is disposed at a position facing the final optical element FL will be mainly described.

[0029] The immersion system 1 is provided in the vicinity of the optical path space K of the exposure light EL on the exit surface side of the final optical element FL, and includes a supply port 12 for supplying the liquid LQ and a circuit for recovering the liquid LQ. A nozzle member 70 having an accumulator 22, a liquid supply device 11 for supplying a liquid LQ to the supply port 12 via a supply pipe 13 and a supply flow path formed inside the nozzle member 70, and a nozzle member 70 A liquid recovery device 21 that recovers the liquid LQ recovered from the recovery port 22 via a recovery flow path formed inside the nozzle member 70 and the recovery pipe 23 is provided. In the present embodiment, the nozzle member 70 is provided in an annular shape so as to surround the optical path space K of the exposure light EL.

[0030] The liquid supply device 11 includes a temperature adjustment device that adjusts the temperature of the liquid LQ, a degassing device that reduces the gas components in the liquid LQ, and a filter unit that removes foreign matters in the liquid LQ. Liquid LQ whose temperature is adjusted with can be delivered. The liquid recovery apparatus 21 includes a vacuum system or the like and can recover the liquid LQ. The operation of the immersion system 1 including the liquid supply device 11 and the liquid recovery device 21 is controlled by the control device 7. The liquid LQ delivered from the liquid supply apparatus 11 flows through the supply pipe 13 and the supply flow path of the nozzle member 70, and then is supplied from the supply port 12 to the optical path space K of the exposure light EL. Further, the liquid LQ recovered from the recovery port 22 by driving the liquid recovery device 21 flows through the recovery path of the nozzle member 70 and is then recovered by the liquid recovery device 21 via the recovery pipe 23. The control device 7 controls the liquid immersion system 1 to perform the liquid supply operation by the liquid supply device 11 and the liquid recovery operation by the liquid recovery device 21 in parallel, so that the final optical element FL and the substrate P are separated. Exposure of light LQ liquid immersion area LR on substrate P so that the optical path space K of EL is filled with liquid LQ Form.

The exposure apparatus EX projects at least the pattern image of the mask M onto the substrate P, and fills the optical path space K of the exposure light EL with the liquid LQ by using the liquid immersion system 1. The exposure apparatus EX irradiates the exposure light EL that has passed through the mask M onto the substrate P held by the first holder HD1 via the projection optical system PL and the liquid LQ filled in the optical path space K of the exposure light EL. Thus, the pattern image of the mask M is projected onto the substrate P, and the substrate P is exposed. In addition, the exposure apparatus EX of the present embodiment has a liquid LQ force filled in the optical path space K of the exposure light EL between the final optical element FL and the substrate P. On the substrate P including the projection area AR of the projection optical system PL. A partial liquid immersion method in which a liquid LQ liquid immersion area LR that is larger than the projection area AR and smaller than the substrate P is locally formed in a part of the area is adopted.

[0032] As described above, the liquid immersion region LR is located on an object disposed at a position facing the lower surface of the final optical element FL on the image plane side of the projection optical system PL that extends only on the substrate P, for example, It can also be formed on a part of the plate member T.

Next, the table 4T according to the present embodiment will be described with reference to FIGS. 2 is a side sectional view of the table 4T with the substrate P held by the first holder HD1, and FIG. 3 is a plan view of the table 4T with the substrate P held by the first holder HD 1 as seen from above. Is a plan view of the table 4T with the substrate P removed from the first holder HD1, and FIG. 5 is a plan view of the substrate P and the plate member T removed from the first and second holders HD1 and HD2. FIG. 6 is an enlarged side sectional view of a part of the table 4T.

[0034] As shown in FIG. 2 and the like, the table 4T is provided on the base member 30, the first holder HD1 that is provided on the base member 30 and detachably holds the substrate P, and is provided on the base member 30, and is a plate member. It has a second holder HD2 that holds T in a removable manner. The plate member T held by the second holder HD2 is arranged so as to surround the periphery of the substrate P held by the first holder HD1.

[0035] The first holder HD1 will be described. As shown in FIGS. 2 to 6, the first holder HD1 is formed on the base material 30 and is formed on the base material 30 to support the back surface of the substrate P, and is supported on the support member 81. The first peripheral wall 33 has a first upper surface 33A facing the back surface of the substrate P and is provided so as to surround the support member 81, and is provided on the upper surface of the base material 30, and is surrounded by the first peripheral wall 33. In the first space 41, the back surface of the substrate P supported by the support member 81 and the first gear A first region 31 that forms a Yap Gl; and a back surface of a substrate P that is provided near the center of the first space 41 with respect to the first region 31 on the upper surface of the base material 30 and supported by the support member 81. And a second region 32 that forms a second gap G2 that is larger than the first gap G1. A step is formed between the first region 31 and the second region 32. Around the second region 32, a side surface 86 substantially parallel to the Z-axis is provided. The side surface 86 is connected to the first region 31 at its upper end and connected to the second region 32 at its lower end. Yes. In the present embodiment, the angle 83 formed by the first region 31 and the side surface 86 is approximately 90 degrees. In the present embodiment, the angle formed by the side surface 86 and the second region 32 is also approximately 90 degrees.

[0036] The first peripheral wall 33 is formed in an annular shape that is substantially the same shape as the outer shape of the substrate P, and the first upper surface 33A of the first peripheral wall 33 is the peripheral edge of the back surface of the substrate P supported by the support member 81. It is provided to face the area (edge area). On the back surface side of the substrate P held by the first holder HD1, the first space 41 is surrounded by the back surface of the substrate P, the first peripheral wall 33, and the base material 30. The first holder HD1 holds the substrate P so that the center of the first space 41 and the center of the back surface of the substrate P substantially coincide.

In the present embodiment, the outer diameter of the first peripheral wall 33 is smaller than the outer diameter of the substrate P. In other words, the first peripheral wall 33 is located on the inner side (center side of the substrate P) than the edge of the substrate P supported by the support member 81. That is, the edge region of the substrate P supported by the support member 81 overhangs a predetermined amount on the outside of the first peripheral wall 33. In the following description, a region overhanging outside the first peripheral wall 33 of the substrate P is appropriately referred to as an overhang region HI (see FIG. 6). In the present embodiment, the width of the overhanging region HI is about 1.5 mm.

As shown in FIG. 6, in the present embodiment, the first peripheral wall 33 is formed so that the back surface of the substrate P supported by the support member 81 and the first upper surface 33A are in contact with each other. That is, the upper end of the support member 81 and the first upper surface 33A of the first peripheral wall 33 are located substantially on the same plane, and the back surface of the substrate P supported by the support member 81 and the first upper surface 33A of the first peripheral wall 33 There is almost no gap between them. In the present embodiment, the width of the first upper surface 33A is set to about 0.5 mm.

The first region 31 is provided in the vicinity of the first peripheral wall 33 on the upper surface of the base material 30. First region 31 is The first peripheral wall 33 is provided inside. That is, the first region 31 is disposed in the first space 41. In the present embodiment, the first region 31 is provided in an annular shape along the first peripheral wall 33. The second region 32 is provided in a substantially circular shape on the inner side of the first region 31 with respect to the first peripheral wall 33. In the present embodiment, the first gap G1 between the back surface of the substrate P supported by the support member 81 and the first region 31 is set to about 50 m. The second gap G 2 between the back surface of the substrate P supported by the support member 81 and the second region 32 is set to 200 to 1000 / ζ πι 〖. Further, each of the first region 31 and the second region 32 is substantially parallel to the heel plane, and the back surface of the substrate ridge supported by the support member 81 is also substantially parallel to the heel plane. That is, each of the first region 31 and the second region 32 on the upper surface of the base material 30 is substantially parallel to the back surface of the substrate board supported by the support member 81.

[0040] The support member 81 is a pin-like protruding member formed on the upper surface of the base material 30, and is disposed at each of a plurality of predetermined positions on the upper surface of the base material 30 inside the first peripheral wall 33. . In the present embodiment, the support member 81 is provided substantially uniformly in each of the first region 31 and the second region 32 on the upper surface of the substrate 30. In the following description, the support member 81 provided in the first region 31 on the upper surface of the base material 30 is appropriately referred to as a first support member 81 Α and provided in the second region 32 on the upper surface of the base material 30. The support member 81 is appropriately referred to as a second support member 81Β.

[0041] The substrate bag is supported by each of the upper end of the first support member 81A and the upper end of the second support member 81B. That is, the upper end of the first support member 81A provided in the first region 31 and the upper end of the second support member 81B provided in the second region 32 form a support surface that contacts the back surface of the substrate substrate. ing. In the present embodiment, the upper end of the first support member 81A provided in the first region 31 and the upper end of the second support member 81B provided in the second region 32 are substantially the same height (in the axial direction). The position is almost the same). Therefore, the size of the first support member 81A provided in the first region 31 in the longitudinal direction (height direction) is the same as that of the second support member 81B provided in the second region 32. ) Is smaller than the size.

A plurality of first suction ports 62 that suck fluid (mainly gas) in the first space 41 are provided on the base material 30 inside the first peripheral wall 33. The first suction port 62 is for sucking and holding the substrate. [0043] The first suction ports 62 are formed at a plurality of predetermined positions other than the first and second support members 81A and 81B, respectively. In the present embodiment, the first suction port 62 is formed in each of the first region 31 and the second region 32 on the upper surface of the substrate 30.

[0044] Each of the first suction ports 62 is connected to a suction device (not shown) including a vacuum system or the like via a flow path, and is also connected to the first space 41. The control device 7 can suck the fluid (including gas and liquid) in the first space 41 by driving the suction device connected to the first suction port 62. The control device 7 sucks the gas in the first space 41 surrounded by the substrate P, the base material 30, and the first peripheral wall 33 in a state where the substrate P is supported by the support member 81, thereby increasing the size of the first space 41. By setting the pressure in the first space 41 to be lower than the pressure in the outer space by making the pressure negative compared to the atmospheric pressure, the substrate P is supported by the support member 81 (first and second support members 81A and 81B). Hold by adsorption. Further, by canceling the suction operation by the suction device connected to the first suction port 62, the substrate P can be removed from the first holder HD1. Thus, in the present embodiment, the substrate P can be attached to and detached from the first holder HD1 by performing the suction operation using the first suction port 62 and the release of the suction operation. The first holder HD 1 in this embodiment includes a so-called pin chuck mechanism.

In addition, the table 4T has a second upper surface 34A that is formed on the base material 30 and faces the back surface of the substrate P supported by the support member 81, and is provided so as to surround the first peripheral wall 33. The second peripheral wall 34 and a second suction port 63 for sucking fluid between the first peripheral wall 33 and the second peripheral wall 34 are provided.

The second upper surface 34 A of the second peripheral wall 34 faces the overhang region HI on the back surface of the substrate P supported by the support member 81. In the present embodiment, a third gap G3 is formed between the overhang region HI on the back surface of the substrate P supported by the support member 81 and the second upper surface 34A of the second peripheral wall 34. In the present embodiment, the third gap G3 is set to about 1 to 1 O / zm, for example. In the present embodiment, the width of the second upper surface 34A is set to about 0.5 mm.

[0047] The second suction port 63 is connected to a suction device (not shown) including a vacuum system or the like via a flow path. The second suction port 63 is connected to the second space 42 between the first peripheral wall 33 and the second peripheral wall 34. The second space 42 is a space surrounded by the overhang region HI on the back surface of the substrate P, the first peripheral wall 33, the second peripheral wall 34, and the base material 30. The control device 7 is connected to the second suction port 63. By driving the suction device, the fluid (including gas and liquid) in the second space 42 can be sucked.

In the present embodiment, a plurality of second suction ports 63 are formed at predetermined intervals so as to surround the first peripheral wall 33 on the base material 30 between the first peripheral wall 33 and the second peripheral wall 34. . In the present embodiment, each of the second suction ports 63 is circular, but may be rectangular. In the present embodiment, a plurality of second suction ports 63 are formed around the first peripheral wall 33 at substantially equal intervals.

In the present embodiment, a groove 53 is formed on the base material 30 between the first peripheral wall 33 and the second peripheral wall 34 so as to surround the first peripheral wall 33. The second suction port 63 is formed inside the groove 53.

Further, a slit 37 is formed in a part of the second peripheral wall 34. The slit 37 is formed at each of a plurality of predetermined positions in the circumferential direction of the second peripheral wall 34. In the present embodiment, a plurality of slits 37 are formed at substantially equal intervals in the circumferential direction of the second peripheral wall 34.

In the present embodiment, the slit 37 is formed so as to extend in the vertical direction (Z-axis direction), and the lower end of the slit 37 reaches the substrate 30. On the other hand, the upper end of the slit 37 reaches the second upper surface 34 A of the second peripheral wall 34. Therefore, the second peripheral wall 34 in the present embodiment is a combination of a plurality of arc-shaped wall portions in plan view, and by arranging the arc-shaped wall portions along the first peripheral wall 33, the entire It is almost circular. Each of the second suction ports 63 is provided between the slits 37 adjacent to each other.

[0052] Next, the plate member T and the second holder HD2 that detachably holds the plate member T will be described. The plate member T is a member different from the table 4T and is detachable from the base material 30. Further, as shown in FIG. 3 and the like, a substantially circular opening TH in which the substrate P can be placed is formed in the center of the plate member T. The plate member T held by the second holder HD2 is arranged so as to surround the periphery of the substrate P held by the first holder HD1. In this embodiment! The surface of the plate member T held by the second holder HD2 is a flat surface that is almost the same height (level) as the surface of the substrate P held by the first holder HD1. . Note that the surface of the substrate P held by the first holder HD1 and the surface of the plate member T held by the second holder HD2 There may be a step between them.

[0053] The outer edge (side surface) of the substrate P held by the first holder HD1 and the inner side (opening TH side) of the plate member T disposed outside the substrate P and held by the second holder HD2. A fourth gap G4 is formed between the edges (inner side). The fourth gap G4 is set to about 0.1 to 1. Omm, for example. Further, the outer shape of the plate member T has a rectangular shape in plan view, and in this embodiment, is substantially the same shape as the outer shape of the base material 30.

[0054] The surface of the plate member T has liquid repellency with respect to the liquid LQ. For example, the contact angle between the surface of the plate member T and the liquid LQ is 90 degrees or more, preferably 110 degrees or more. The plate member T is formed of a material having liquid repellency such as a fluorine-based resin such as polytetrafluoroethylene (Teflon (registered trademark)) or an acrylic resin. The plate member T may be formed of metal or the like, and the surface thereof may be coated with a liquid repellent material such as fluorine-based grease.

[0055] The second holder HD2 is formed on the base material 30, and supports the plate member T. The second holder HD2 is opposed to the back surface of the plate member T formed on the base material 30 and supported by the support member 82. The third peripheral wall 35 provided to surround the second peripheral wall 34, and the rear surface of the plate member T formed on the base material 30 and supported by the support member 82. And a fourth peripheral wall 36 having a fourth upper surface 36A and provided to surround the third peripheral wall 35. The support member 82 that supports the plate member T is formed between the third peripheral wall 35 and the fourth peripheral wall 36.

[0056] The third upper surface 35A of the third peripheral wall 35 is provided to face the inner edge region (inner edge region) near the opening TH on the back surface of the plate member T supported by the support member 82. The fourth upper surface 36A of the fourth peripheral wall 36 is provided so as to face the outer edge region (outer edge region) on the back surface of the plate member T. A third space 43 is formed between the third peripheral wall 35 and the fourth peripheral wall 36. When the plate member T is held in the second holder HD2, the back surface of the plate member T, the third peripheral wall 35, and the The third space 43 surrounded by the four peripheral walls 36 and the base material 30 is almost a closed space.

[0057] In the present embodiment, the third peripheral wall 35 is formed so that the back surface of the plate member T supported by the support member 82 and the third upper surface 35A are in contact with each other, and the fourth peripheral wall 36 is the support member. It is formed so that the back surface of the plate member T supported by 82 and the fourth upper surface 36A are in contact with each other.

[0058] The support member 82 is a pin-like protruding member formed on the upper surface of the base material 30, and is provided at a plurality of predetermined positions on the upper surface of the base material 30 between the third peripheral wall 35 and the fourth peripheral wall 36. Placed in each Yes.

[0059] On the base material 30, a third suction port 64 for sucking fluid (mainly gas) in the third space 43 is provided. The third suction port 64 is for holding the plate member T by suction. In the third space 43, the third suction ports 64 are formed at a plurality of predetermined positions other than the support member 82, respectively.

[0060] Each of the third suction ports 64 is connected to a suction device (not shown) including a vacuum system or the like via a flow path, and is connected to the third space 43. The control device 7 can suck the fluid (including gas and liquid) in the third space 43 by driving the suction device connected to the third suction port 64. With the support member 82 supporting the plate member T, the control device 7 sucks the gas in the third space 43 surrounded by the plate member T, the base material 30, the third peripheral wall 35, and the fourth peripheral wall 36. Thus, by making the third space 43 into a negative pressure (by making the pressure in the third space 43 lower than the pressure in the outer space), the back surface of the plate member T is sucked and held by the support member 82. . Further, by releasing the suction operation by the suction device connected to the third suction port 64, the plate member T can be removed from the second holder HD2. Thus, in the present embodiment, the plate member T can be attached to and detached from the second holder HD2 by performing the suction operation using the third suction port 64 and the release of the suction operation. The second holder HD2 in the present embodiment includes a so-called pin chuck mechanism.

Further, as shown in FIG. 6 and the like, a fourth space 44 is formed between the second peripheral wall 34 and the third peripheral wall 35. When the substrate P is held by the first holder HD1 and the plate member T is held by the second holder HD2, it is surrounded by the overhang region HI, the second peripheral wall 34, the third peripheral wall 35, and the base material 30 on the back surface of the substrate P. The fourth space 44 is connected to an external space (atmospheric space) through a fourth gap G4 formed between the substrate P and the plate member T.

[0062] As shown in FIG. 6 and the like, when the substrate P is held by the first holder HD1 and the plate member T is held by the second holder HD2, the overhang region HI and the first peripheral wall on the back surface of the substrate P 33, the second peripheral wall 34, and the substrate 30 are surrounded by the second gap 42, the third gap G3 formed between the second upper surface 34A of the second peripheral wall 34 and the back surface of the substrate P, and the substrate P. Is connected to the external space (atmospheric space) through the fourth gap G4 formed between the plate member T and the external space (atmospheric space) through the slit 37 and the fourth gap G4. Has been. That is, substrate P is Even when the plate member T is held by the second holder HD2 in the first holder HD1, the second space 42 and the external space (atmospheric space) are separated by the slit 37, the third gap G3, and the fourth gap G4. Gas can flow between the two.

[0063] Next, the operation and action of the table 4T will be described.

[0064] The control device 7 places the substrate stage 4 at a predetermined substrate exchange position (loading position), and the first holder HD1 of the table 4T of the substrate stage 4 is exposed using the transfer device 100. The board P to be loaded is loaded. The control device 7 drives the suction device connected to the first suction port 62 at a predetermined timing, and is surrounded by the back surface of the substrate P loaded on the first holder HD1, the first peripheral wall 33, and the base material 30. The substrate P is sucked and held by the support member 81 by setting the first space 41 to a negative pressure. The plate member T is already held by the second holder HD2 before the substrate P is held by the first holder HD1.

The control device 7 forms an immersion region LR of the liquid LQ on the substrate P using the immersion system 1 in order to perform immersion exposure of the substrate P held by the first holder HD1. The control device 7 exposes the substrate P held in the first holder HD1 of the table 4T through the liquid LQ in the immersion area LR.

[0066] For example, when immersion exposure is performed on the edge region of the surface of the substrate P, a part of the immersion region LR may be formed outside the substrate P, and the immersion region LR may be formed on the fourth gap G4. There is sex. In that case, the fourth gap G4 between the substrate P held by the first holder HD1 and the plate member T held by the second holder HD2 is set to about 0.1 to 1. Omm. The surface tension of the liquid LQ prevents the liquid LQ from entering the fourth gap G4. Further, since the surface of the plate member T has liquid repellency, the liquid LQ is prevented from entering the fourth space 44 on the back side of the substrate P through the fourth gap G4. Accordingly, even when the edge region on the surface of the substrate P is exposed, the liquid LQ can be held under the projection optical system PL because the plate member T is disposed around the substrate P.

[0067] While moving, the back surface of the substrate P passes through the fourth gap G4 due to the movement of the table 4T and the pressure change of the liquid LQ that forms the Z or immersion region LR. Liquid LQ may enter the fourth space 44 on the side. The liquid LQ that has entered the fourth space 44 through the fourth gap G4 enters the second space 42 through the third gap G3 and / or the slit 37. Even in this case, since the back surface of the substrate P and the first upper surface 33A of the first peripheral wall 33 are in contact (contact), the liquid LQ can be prevented from entering the inside of the first peripheral wall 33. In addition, since the second space 42 is provided between the first peripheral wall 33 and the second peripheral wall 34, the liquid LQ that has entered through the gaps G4, G3, etc. is held in the second space 42. Can do. In the present embodiment, the control device 7 does not perform the suction operation using the second suction port 63 at least during the exposure of the substrate P. That is, the control device 7 stops driving the suction device connected to the second suction port 63 while exposing the substrate P at least.

[0068] In addition, for example, there is unevenness in a region in contact with the first upper surface 33A of the first peripheral wall 33 on the back surface of the substrate P, or the substrate P is warped. There is a possibility that a gap is formed between the first peripheral wall 33 and the first upper surface 33A. In this case, the liquid LQ may enter the inside of the first peripheral wall 33, that is, the first space 41, between the back surface of the substrate P and the first upper surface 33 A of the first peripheral wall 33. However, the first region 31 that forms the first gap G1 with the back surface of the substrate P is provided in the vicinity of the first peripheral wall 33 on the upper surface of the base material 30. The liquid LQ can be prevented from entering inside (for example, inside the corner 83). That is, by providing the first region 31 inside the first peripheral wall 33, it is possible to suppress the liquid LQ from entering the space between the second region 32 and the back surface of the substrate P.

FIG. 7 is a view showing a state in which the liquid LQ has entered the first space 41 from between the first upper surface 33 A of the first peripheral wall 33 and the back surface of the substrate P. As shown in FIG. 7, a minute first gap G1 of about 50 m is formed between the first region 31 and the back surface of the substrate P. It is held between the back side of the substrate P. Since the first gap G1 between the first region 31 and the back surface of the substrate P is smaller than the second gap G2 between the second region 32 and the substrate P, the liquid LQ that has entered the first space 41 is Due to the surface tension, it remains in the space between the first region 31 and the back surface of the substrate P, and does not flow into the space between the second region 32 and the back surface of the substrate P. Further, the liquid LQ that has entered the first space 41 spreads in the circumferential direction along the first region 31 that is formed in an annular shape by capillary action. As described above, even if the liquid LQ has entered the first space 41, the first region 31 causes the liquid LQ that has entered the first space 41 to pass between the back surface of the substrate P. Therefore, it is possible to suppress the liquid LQ that has entered the first space 41 from reaching the space between the second region 32 and the back surface of the substrate P.

[0070] In the present embodiment, the liquid LQ that has entered the first space 41 is held in the space between the first region 31 and the back surface of the substrate P, and between the second region 32 and the back surface of the substrate P. In order not to flow into the space, the step between the first region 31 and the second region 32, the size of the first gap G1, the size of the second gap G2, and the size of the first region 31 (first The distance between the peripheral wall 33 and corner 83) is optimized. Since the amount of liquid LQ that enters the first space 41 is very small, even if the first gear G1 is small, the liquid LQ that has entered can be held between the first region 31 and the back surface of the substrate P. it can. In addition, the suction operation (suction force, etc.) of the first suction port 62 provided in the second region 32 enters the first space 41 and is held between the first region 31 and the back surface of the substrate P. The liquid LQ is optimized so as not to be drawn into the space between the second region 32 and the back surface of the substrate P.

[0071] After the exposure of the substrate P, the control device 7 drives the suction device connected to the second suction port 63 in a state where the substrate P is held by the first holder HD1, and opens the second suction port 63. Start the suction operation used. When the suction device connected to the second suction port 63 is driven, the fluid around the second suction port 63 (that is, the fluid in the second space 42) is sucked into the second suction port 63. The third gap G3 formed between the second upper surface 34A of the second peripheral wall 34 and the overhang region HI on the back surface of the substrate P is a second space 42 between the first peripheral wall 33 and the second peripheral wall 42. A flow path that allows gas to flow between the outer space and the external space is formed. Therefore, as shown in FIG. 8, when the second suction port 63 sucks the gas in the second space 42, the second suction port 63 from the external space (atmospheric space) passes through the fourth gear G4 and the third gap G3. The gas flows into the space 42, and the directional gas flow F3 is generated to the second suction port 63. In addition, the slit 37 provided in a part of the second peripheral wall 34 forms a flow path through which gas can flow between the second space 42 between the first peripheral wall 33 and the second peripheral wall 34 and the external space. is doing. Therefore, as shown in FIG. 9, when the second suction port 63 sucks the gas in the second space 42, the second space 42 enters the second space 42 through the fourth gap G4 and the slit 37 from the external space (atmospheric space). The gas flows in and a directional gas flow F4 is generated to the second suction port 63.

[0072] The gas flows F3 and F4 generated by the suction operation using the second suction port 63 are The liquid LQ adhering to the overhang region HI on the back surface of the plate P, the outer surface of the first peripheral wall 33, the inner surface of the second peripheral wall 34, the upper surface of the base material 30 in the second space 42, etc. The liquid LQ that has moved moves to the second suction port 63 and is collected through the second suction port 63. In this way, by performing the suction operation using the second suction port 63, the liquid LQ that adheres to the overhang region HI on the back surface of the substrate P and the liquid LQ that exists in the second space 42 are reduced. Can be collected.

[0073] In the present embodiment, during the exposure of the substrate P through the liquid LQ, the suction operation using the second suction port 63 is stopped, and the suction operation using the second suction port 63 is This is performed after the exposure of the substrate P through the liquid LQ. Stopping the suction operation using the second suction port 63 during exposure suppresses vibration caused by the suction operation (liquid recovery operation) using the second suction port 63 and deterioration of the flatness of the substrate P surface. Can do. Then, after the exposure via the liquid LQ is completed, the liquid LQ can be smoothly recovered by performing the suction operation using the second suction port 63 while the substrate P is held in the first holder HD1. . Note that the suction operation (liquid recovery operation) using the second suction port 63 is performed after the exposure of the substrate P is completed and before the substrate P is unloaded from the first holder HD1. Do it! /

10A and 10B are diagrams showing a state where the substrate P unloaded from the first holder HD1 is being transported by the transport device 100. FIG. The transport apparatus 100 includes an arm member 101 and a convex member 102 that is provided on the arm member 101 and has a contact surface 103 that comes into contact with a predetermined area PA near the center of the back surface of the substrate P. The second region 32 of the first holder HD1 is set according to a predetermined region PA on the back surface of the substrate P that contacts the contact surface 103 of the transport apparatus 100. As described above, when the first holder HD1 holds the back surface of the substrate P, the first gap G1 formed between the first region 31 and the back surface of the substrate P causes the second region 32 to The liquid LQ is prevented from entering the space between the back surface of the substrate P and the liquid LQ is prevented from adhering to the predetermined area PA on the back surface of the substrate P. Therefore, even when the contact surface 103 of the transport apparatus 100 contacts the predetermined area PA on the back surface of the substrate P, it is possible to suppress the liquid LQ from adhering to the transport apparatus 100.

[0075] As described above, the first region 31 that forms the first gap G1 and the back surface of the substrate P is provided inside the first peripheral wall 33, and the back surface of the substrate P is formed inside the first region 31. 1st gap G By providing the second region 32 that forms the second gap G2 that is larger than 1, the liquid LQ that has entered the first space 41 inside the first peripheral wall 33 is allowed to flow between the first region 31 and the back surface of the substrate P. Can be held between. Therefore, it is possible to suppress the liquid LQ from adhering to the predetermined area PA on the back surface of the substrate P (the area corresponding to the second area 32), and the transfer device 100 contacts the predetermined area PA on the back surface of the substrate P. Even in this case, the liquid LQ can be prevented from adhering to the transfer device 100.

[0076] Further, since the liquid LQ adhering to the overhang region HI of the substrate P is collected by the suction operation of the second suction port 63, the substrate P is transported after unloading the substrate P. In the meantime, the liquid LQ can be prevented from scattering on the transport path. In addition, if necessary, a removal device capable of removing the liquid LQ attached to the substrate P is provided on the substrate P transfer path after being unloaded from four substrate stages. The liquid LQ can be prevented from splashing on the path.

In the above-described embodiment, since the first suction port 62 is also provided in the first region 31, the liquid LQ that has entered the space between the first region 31 and the back surface of the substrate P is removed. It can be recovered from the first suction port 62. In this case, it is necessary to arrange a gas-liquid separator or the like in the flow path between the first suction port 62 and the suction device connected to the first suction port 62.

In addition, the first suction port 62 may not be provided in the first region 31. In particular, when a problem such as heat of vaporization occurs due to the first suction port 62 sucking the liquid LQ, it is desirable to provide the first suction port 62 only in the second region 32.

[0079] <Second Embodiment>

Next, a second embodiment will be described. A characteristic part of this embodiment is that a groove is formed on the upper surface of the base material 30 inside the first peripheral wall 33. In the following description, components that are the same as or equivalent to those in the above embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

FIG. 11 is an enlarged side sectional view of a part of the table 4T according to the second embodiment. In FIG. 11, a groove 84 is formed on the upper surface of the base material 30 inside the first peripheral wall 33. The groove 84 is formed in the vicinity of the first peripheral wall 33, and is formed in an annular shape along the first peripheral wall 33. [0081] The upper surface of the base material 30 between the groove 84 and the first peripheral wall 33 becomes a first region 31 that forms a first gap G1 with the back surface of the substrate P supported by the support member 81. Yes. Further, the bottom surface 85 inside the groove 84 forms a second region 32 that forms a second gap G2 with the back surface of the substrate P supported by the support member 81. That is, in the present embodiment, the second region 32 is provided inside the groove 84.

In the present embodiment, since the groove 84 that forms the second gap G2 larger than the first gap G1 is provided inside the first region 31 that forms the first gap G1, the above-mentioned description is made. As in the first embodiment, the inflow of the liquid LQ that has entered the first space 41 into the groove 84 (the space between the second region 32 and the back surface of the substrate P) inside the first region 31 is suppressed. The liquid LQ that has entered the space 41 can be held between the first region 31 and the back surface of the substrate P. In addition, for some reason, even if the liquid LQ held between the first region 31 and the back surface of the substrate P flows to the center side (groove 84) of the first space 41 from the first region 31. In the groove 84, liquid LQ can be collected. Therefore, it is possible to suppress the liquid LQ from entering the center side of the first space 41 with respect to the groove 84. As described above, in the present embodiment, the second gap G2 larger than the first gap G1 is formed and the groove 84 capable of collecting the liquid LQ is provided, so that a predetermined region near the center of the back surface of the substrate P is provided. Liquid LQ can be prevented from adhering to PA.

In FIG. 11, the angle 83 is an obtuse angle, and the force angle 83 may be approximately 90 degrees.

[0084] <Third embodiment>

Next, a third embodiment will be described. The characteristic part of this embodiment is that the first region 3

The angle 83 between 1 and the second region 32 is an acute angle.

FIG. 12 is an enlarged side sectional view of a part of the table 4T according to the third embodiment. Figure 1

2, a groove 84 is formed on the upper surface of the base material 30 inside the first peripheral wall 33. The groove 84 is formed in the vicinity of the first peripheral wall 33, and is formed in an annular shape along the first peripheral wall 33 inside the first peripheral wall 33.

[0086] The upper surface of the base material 30 between the groove 84 and the first peripheral wall 33 becomes a first region 31 that forms a first gap G1 with the back surface of the substrate P supported by the support member 81. Yes. Also inside groove 84 The bottom surface 85 of this is a second region 32 that forms a second gap G2 with the back surface of the substrate P supported by the support member 81.

A side surface 86 ′ near the first region 31 of the groove 84 is an outer surface around the second region 32, and the corner 83 is formed between the side surface 86 ′ and the first region 31. In the present embodiment, the angle α of the angle 83 is an acute angle. Angle α is the first region on the side 86 'and the top surface of the substrate 30.

This is the angle formed by 31.

[0088] By making the corner 83 an acute angle, the liquid LQ held between the first region 31 and the back surface of the substrate ridge is allowed to enter the center side of the first space 41 rather than the first region 31. Can be suppressed. This will be described with reference to FIGS. 13A and 13B.

[0089] FIG. 13A is a schematic diagram showing the state of the liquid LQ when the corner 83 is not an acute angle, and FIG.

FIG. 6 is a schematic diagram showing a state of liquid LQ when 83 is an acute angle. In FIG. 13A, the corner 83 is almost a right angle.

[0090] In FIGS. 13A and 13B, in the figure, when the force resisting in the negative direction of the liquid LQ is FL and the force resisting in the + Z direction is FU,

= y X sm a ― γ X cos a (l)

1 1 2 2

FU = γ X sin a-y X cos a (2) holds. However,

2 2 1 1

Ύ _ι : surface tension of liquid LQ on substrate 30

γ: surface tension of liquid LQ on substrate Ρ,

2

a: Contact angle between the substrate 30 and the liquid LQ,

a: Contact angle between the substrate P and the liquid LQ.

2

In order for the liquid LQ held between the first region 31 and the back surface of the substrate P not to move to the center side of the first space 41 (in the + Y direction in FIGS. 13A and 13B),

FL> 0, FU> 0 ...) must be satisfied.

[0092] By making the angle 83¾ϋ¾ so that the equations (1), (2), and FIGS. 13A and 13B are also divided, the condition of equation (3) can be easily satisfied.

[0093] In this way, the liquid held between the first region 31 and the back surface of the substrate substrate is obtained by setting the angle _α ¾ϋ¾ angle of the angle 83 between the first region 31 and the second region 32. It is possible to suppress the LQ from moving to the center side (inside) of the first space 41 from the first region 31. Therefore, the board Ρ It is possible to suppress the liquid LQ from adhering to the predetermined area PA near the center of the back surface.

Note that the angle 83¾ | ¾ angle of the first embodiment described with reference to FIG. 6 and the like may be used.

[0095] <Fourth embodiment>

As shown in FIG. 14, a fifth peripheral wall 38 formed along the first peripheral wall 33 can be provided on the base material 30 inside the first peripheral wall 33. The fifth peripheral wall 38 is formed in the vicinity of the first peripheral wall 33, and is formed annularly along the first peripheral wall 33 inside the first peripheral wall 33. In the present embodiment, a predetermined gap is formed between the fifth upper surface 38A of the fifth peripheral wall 38 and the back surface of the substrate P supported by the support member 81. The surface 38 A and the back surface of the substrate P supported by the support member 81 may be in contact with each other! /.

[0096] Even if the liquid LQ enters the first space 41 from between the first upper surface 33A of the first peripheral wall 33 and the back surface of the substrate P, the fifth peripheral wall 38 causes the liquid LQ to be more than the fifth peripheral wall 38. It is possible to suppress intrusion into the inner side (the center side of the first space 41). Therefore, it is possible to suppress the liquid LQ from adhering to the predetermined area PA near the center of the back surface of the substrate P.

It should be noted that the projection optical system of the above-described embodiment has a force that fills the optical path space on the image plane side of the final optical element with a liquid, as disclosed in International Publication No. 2004Z019128 pamphlet. This is achieved by adopting a projection optical system that fills the optical path space on the object plane side with liquid.

[0098] It should be noted that the liquid LQ of the above-described embodiment may be a liquid other than water, which is water! /, For example, when the light source of the exposure light EL is an F laser, the F laser light is Does not penetrate water

twenty two

For example, perfluoropolyether (PFPE) that can transmit F laser light as liquid LQ

2

) Or fluorinated fluids such as fluorinated oils. In addition, liquid LQ is stable to the photoresist applied to the projection optical system PL or the substrate P surface that is transparent to the exposure light EL and has a refractive index as high as possible (for example, seder). (Oil) can also be used.

[0099] The liquid LQ may have a refractive index of about 1.6 to 1.8. Liquid LQ having a refractive index of about 1.6 to 1.8 may be used. Examples of liquid LQ include isopropanol having a refractive index of about 1.50 and glycerol (glycerin) having a refractive index of about 1.61, a predetermined liquid having a C—H bond or an O—H bond, hexane, and the like. Specific liquids (organic solvent) such as butane and decane, and predetermined liquids such as decalin and bicyclohexyl are listed. Alternatively, any two or more kinds of these predetermined liquids may be mixed, or the predetermined liquid may be added (mixed) to pure water. Alternatively, as the liquid LQ, in pure water, H +, Cs +, K +, Cl _, SO 2_, PO 2_ etc.

44 (base) or acid may be added (mixed). Further, pure water may be added (mixed) with fine particles such as A1 oxide. These liquid LQs can transmit ArF excimer laser light. The liquid LQ is a photosensitive material (or protective film (topcoat film) or reflective film) that is applied to the surface of the projection optical systems PL and Z or the substrate P, which has a small light absorption coefficient and a low temperature dependency. It is preferable that it is stable with respect to a protective film.

[0100] The optical element FL can be formed of, for example, quartz (silica). Or, fluorination power, fluorite, barium fluoride, strontium fluoride, lithium fluoride, sodium fluoride, and BaLiF

It may be formed of a single crystal material of a fluorinated compound such as 3. Further, the optical element may be formed of lutetium aluminum garnet (LuAG). And a single crystal material of a fluoride compound such as sodium fluoride.

[0101] At least one optical element of the projection optical system may be made of a material having a refractive index higher than that of quartz and Z or fluorite (eg, 1.6 or more). For example, as disclosed in WO 2005Z059617 pamphlet, sapphire, diacid germanium, etc., or as disclosed in WO 2005Z059618 pamphlet, salt potassium (with a refractive index of about 1 75) etc. can be used.

In each of the embodiments described above, the exposure apparatus provided with the projection optical system having a plurality of optical elements has been described as an example. However, a projection optical system configured with one optical element may be used. Alternatively, the present invention can be applied to an exposure apparatus and an exposure method that do not use a projection optical system. Even when the projection optical system is not used, the exposure light is irradiated onto the substrate through an optical member such as a mask or a lens, and an immersion region is formed in a predetermined space between the optical member and the substrate. The

[0103] In each of the embodiments described above, the positional information of the mask stage and the substrate stage is measured using the interferometer system. You can use an encoder system that detects the scale (diffraction grating)! In this case, it is preferable that the hybrid system includes both the interferometer system and the encoder system, and the measurement result of the encoder system is calibrated (calibrated) using the measurement result of the interferometer system. Further, the position of the substrate stage may be controlled by switching between the interferometer system and the encoder system or using both.

[0104] Further, the present invention relates to JP-A-10-163099, JP-A-10-214783, JP 2000-505958, US Pat. No. 6,341,007, US Pat. No. 6,400,441. , U.S. Patent 6,549,269, U.S. Patent 6,590,634, U.S. Patent 6,208,407, U.S. Patent 6,262,796, etc. It can also be applied to a multi-stage type exposure apparatus.

Note that the substrate P in each of the above embodiments is not limited to a semiconductor wafer for manufacturing a semiconductor device, but a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or a mask used in an exposure apparatus. Reticle masters (synthetic quartz, silicon wafers) are applied. The substrate may be in other shapes such as a rectangle other than a circular shape.

The exposure apparatus EX can be applied to a step-and-scan type scanning exposure apparatus (scanning stepper) that performs synchronous exposure of the mask M and the substrate P to scan and expose the pattern of the mask M. However, it should also be applied to a step-and-repeat projection exposure apparatus (stepper) in which the mask M and substrate P are stationary and the pattern of the mask M is exposed at once and the substrate P is moved step by step. Can do.

[0107] Further, as the exposure apparatus EX, a reduced image of the first pattern is projected with the first pattern and the substrate P substantially stationary (for example, a refraction type including a reflective element at a 1Z8 reduction magnification). It can also be applied to an exposure apparatus that uses a projection optical system) to perform batch exposure on the substrate P. In this case, after that, with the second pattern and the substrate P almost stationary, a reduced image of the second pattern is collectively exposed on the substrate P by partially overlapping the first pattern using the projection optical system. It can also be applied to a stitch type batch exposure apparatus. In addition, as a stitch type exposure apparatus, at least two patterns are partially overlapped on the substrate P and transferred. It can also be applied to a step 'and' stitch type exposure apparatus in which the plate P is moved sequentially.

Further, the present invention relates to Japanese Patent Application Laid-Open Nos. 10-163099, 10-214783, 2000-505958, US Pat. No. 6,341,007, US Pat. No. 6,400,441. , U.S. Patent 6,549,269, U.S. Patent 6,590,634, U.S. Patent 6,208,407, U.S. Patent 6,262,796, etc. It can also be applied to a multi-stage type exposure apparatus.

Further, as disclosed in JP-A-11-135400, JP-A-2000-164504, US Pat. No. 6,897,963, etc., a substrate stage for holding the substrate and a reference mark are formed. The present invention can also be applied to an exposure apparatus provided with the measured reference member and a measurement stage on which various photoelectric sensors are mounted.

[0110] The type of exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto a substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, It can be widely applied to exposure devices for manufacturing imaging devices (CCD), micromachines, MEMS, DNA chips, or reticles or masks.

In the above-described embodiment, force using a light-transmitting mask in which a predetermined light-shielding pattern (or phase pattern 'dimming pattern) is formed on a light-transmitting substrate is used instead of this mask. For example, as disclosed in US Pat. No. 6,778,257, an electronic mask that forms a transmission pattern, a reflection pattern, or a light emission pattern based on the electronic data of the pattern to be exposed may be used. Oh ,.

[0112] Further, as disclosed in WO 2001Z035168, an exposure apparatus (lithography system) that exposes a line 'and' space pattern on the substrate P by forming interference fringes on the substrate P. ) Can also be applied to the present invention.

[0113] It should be noted that as far as permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in the above embodiments and modifications are incorporated herein by reference.

As described above, the exposure apparatus EX of the above embodiment assembles various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by. In order to ensure these various accuracies, before and after this assembly, adjustments to achieve optical accuracy for various optical systems, and mechanical accuracy for various mechanical systems are achieved. Adjustments for various electrical systems are made to achieve electrical accuracy. Various subsystem forces The assembly process to the exposure system includes mechanical connections, electrical circuit wiring connections, and pneumatic circuit piping connections between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustments are performed to ensure various accuracies for the exposure apparatus as a whole. It is desirable to manufacture the exposure equipment in a tailored room where the temperature and cleanliness are controlled.

As shown in FIG. 15, a microdevice such as a semiconductor device is composed of a step 201 for designing the function and performance of the microdevice, a step 202 for producing a mask (reticle) based on the design step, and a substrate of the device. Step 203 for manufacturing a substrate, step of exposing the mask pattern onto the substrate by the exposure apparatus EX of the above-described embodiment, step of developing the exposed substrate, heating (curing) of the developed substrate, etching step, etc. It is manufactured through a step 204 including a processing process, a device assembly step (including a dicing process, a bonding process, and a knocking process) 205, an inspection step 206, and the like.

Claims

The scope of the claims

[1] A substrate holding device for holding a substrate irradiated with exposure light through a liquid,

A substrate;

A support part formed on the base material and supporting the substrate;

A peripheral wall formed on the substrate and surrounding the support;

An annular force is provided on the base material along the peripheral wall, forms a first gap with the back surface of the substrate supported by the support portion, and a force between the substrate supported by the support portion and the peripheral wall A first region for holding the immersion liquid between the substrate and the substrate,

On the base material, provided on the inner side of the first region with respect to the peripheral wall, the back surface of the substrate supported by the support portion, and a second region forming a second gap larger than the first gap. A substrate holding device.

2. The substrate holding apparatus according to claim 1, further comprising a groove provided in an annular shape inside the first region and including the second region.

3. The substrate holding apparatus according to claim 2, wherein the groove can collect the intrusion liquid.

[4] It further comprises a side surface provided around the second region,

The substrate holding apparatus according to claim 1, wherein an angle formed by the first region and the outer surface is an acute angle.

[5] The support portion includes a first support portion provided in the first region and a second support portion provided in the second region, and the first support provided in the first region. The substrate holding device according to claim 1, wherein a support surface of the substrate is formed by an upper end of a part and an upper end of the second support part provided in the second region.

[6] It further comprises a suction port provided in the base material,

6. The substrate is adsorbed onto the support portion by sucking a gas in a space surrounded by the substrate supported by the support portion, the peripheral wall, and the base material from the suction port. The substrate holding device according to claim 1.

7. The substrate holding apparatus according to claim 6, wherein the suction port is provided in the second region.

8. The substrate holding device according to claim 7, wherein the suction port is provided in the first region.

[9] The peripheral wall has an upper surface facing a back surface of the substrate supported by the support portion, The substrate holding device according to claim 1, wherein an upper end of the support portion and an upper surface of the peripheral wall are located on the same plane.

[10] A substrate holding device according to any one of claims 1 to 9, comprising a liquid immersion region on a substrate held by the substrate holding device, and passing the liquid in the liquid immersion region. An exposure apparatus that exposes the substrate held by the substrate holding apparatus.

11. A device manufacturing method using the exposure apparatus according to claim 10.