Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/04—Coating on selected surface areas, e.g. using masks
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32055—Arc discharge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32366—Localised processing
  • H01J37/32376—Scanning across large workpieces
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32917—Plasma diagnostics
  • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Definitions

• the invention relates to a method for depositing a material layer on a substrate surface, wherein the substrate is introduced into a process chamber, wherein the material layer is applied by at least one movable plasma source, wherein the position and the angular position of the plasma source with respect to the substrate are controlled by a control.
• Such a method is known from NL 1022155C.
• This publication shows a method for treating a surface of at least one substrate.
• An advantage of this method over previously shown methods is that, with the invention from the publication, the plasma source can be moved with respect to the substrate.
• the plasma sources according to the publication are displaceable, but since they are located outside the process chamber, the positioning freedom of the plasma source with respect to the substrate is limited. With depositing material on a three-dimensional substrate surface, it is difficult to obtain a desired layer thickness at a desired location on the substrate with above method.
• the positioning freedom of the plasma source is not such that, with the plasma plume, all over the same amount of material can be delivered.
• the size of the substrate to be placed in the process chamber is limited by the size of the process chamber. The size thereof is in turn limited by the range of the plasma plumes of the plasma sources placed on the process chamber.
• the invention provides a method according to the type stated in the introduction, which method is characterized in that, for the purpose of coating a substrate with a three-dimensional surface, the control receives measurement data from a measuring arrangement, which measures a curve of the three-dimensional substrate surface at the location to be deposited, wherein, depending on those measurement data, the control controls the position and the angular position of the plasma source with respect to the deposition location so that the material to be deposited can be applied to the respective location in a desired manner.
• the measuring arrangement enables accurate control of the plasma deposition process.
• the control of the plasma sources according to the invention does not need to be provided with programs geared to the substrate to be deposited. This is particularly favorable for the rate at which different three-dimensional substrate surfaces can be processed in succession and therefore also particularly favorable for the total production rate.
• the measurement of the curve of the substrate surface can take place before the substrate is introduced into the process chamber and with the measurement data being stored in a memory.
• Such a design has the advantage that the measuring device does not need to be resistant against the conditions prevailing in the process chamber.
• the measurement of the curve of the substrate surface can take place in the process chamber.
• the measurement of the curve can then take place during the deposition.
• the measurement of the curve can take place in-process in that the curve is measured at the location of the position at which the deposition is taking place at that moment.
• the at least one plasma source is located in the process chamber.
• the process chamber is not limited as to its dimensioning, so that larger substrates, such as for instance car windows, spoilers and car roofs, can easily be placed in the process chamber.
• the plasma sources are movable.
• the at least one plasma source is displaceable in three dimensions with respect to the substrate surface.
• the plasma source can, at all times, be displaced such that it reaches the most favorable position with respect to the substrate surface, so that deposition will take place with the most optimal deposition angle.
• the substrate it is also possible for the substrate to move through the process chamber. In this manner, an optimal positioning of the substrate with respect to the at least one plasma source can be obtained. According to a further elaboration of the invention, both the movement of the at least one plasma source and the movement of the substrate together result in a deposition of the material layer in the desired manner, while, according to a further elaboration, this involves a substantially uniform thickness of the material layer, so that the layer has a uniform quality .
• Each individual plasma source can be set to the correct position above the part of the substrate surface where the respective plasma source is to deposit material. Especially with a substrate surface with large differences in level, it is important that the plasma sources are accurately positioned so that, for each plasma source, a desired distance between the substrate surface and the source is possible.
• the plasma source can also be rotated with respect to an axis perpendicular to the substrate surface. This is particularly favorable with respect to the uniform deposition of the layer. If the plasma plume is not rotationally symmetric, the deposited layer will become uniform either. If the plasma plume can rotate about the axis perpendicular to the substrate surface, this problem is solved.
• the at least one plasma source can also be rotated about at least one axis extending substantially parallel to the substrate surface.
• Rotation with respect to one axis or multiple axes parallel to the substrate surface is particularly convenient if the substrate surface has large differences in level so that the angle of the substrate surface with respect to the plasma plume is particularly small.
• the deposition angle can be increased so that the material ends up more adequately and more uniformly on the surface. This reduces the required deposition time, since a maximum amount of material strikes the substrate surface. This in contrast with when the deposition angle is small, so that material ends up beside the surface or strikes this surface in a non-efficient manner.
• control can control each plasma source individually, which makes it possible that each location on the substrate surface can be subjected to the same extent of deposition.
• control will keep the centerline of a plasma plume formed by the plasma source substantially perpendicular to the surface of the respective location. Due to this perpendicular position, the plasma plume will deposit material on the substrate surface in a uniform manner. The material layer will then have a regular thickness at the respective location, unlike when the plasma plume deposits material in an inclined position.
• control brings about that that the distance between the respective plasma source and a desired location of the three-dimensional surface is substantially constant for the successive locations. This also results in an accurately controlled plasma source which manufactures a material layer on the three-dimensional surface according to the desired manner.
• the control can control the position of the at least one plasma source before and/or during the deposition of the layer.
• the plasma source Before the deposition starts, the plasma source is already positioned so that the deposition angle and plasma source distance are properly set. Should there be factors which make a change of position during deposition necessary, then the control can adjust the position of the plasma source. The different locations of the substrate surface can be reached with the plasma plume during deposition, while a great extent of control over the deposition to be carried out is realized.
• the plasma sources can be switched on independently of one another, which contributes to good control of the deposition.
• the plasma sources can be switched on or off. At locations where the layer thickness needs to be smaller than at locations where the layer thickness needs to be greater, the plasma sources will be switched off sooner or be switched on later compared to the plasma sources which are to provide the thicker layer thickness. It is also possible to vary the process settings of the different sources so that more or less material can be applied. Thus, the possible desire to deposit more on particular parts and less on particular parts can be realized.
• the at least one plasma source is controlled such that, on each part of the substrate surface, substantially the same amount of material is deposited. If the substrate surface needs to be provided completely with a material layer with uniform thickness, the control controls the positioning, the switching on and off and/or the process parameters of the different plasma sources such that the material layer is indeed uniform all over.
• the measuring arrangement measures quality parameters of the deposited layer during and/or after deposition of the layer, which offers the possibility to still adjust the plasma deposition process during deposition and/or during a run of the same types of substrates.
• any deviations in the final material layer can be prevented, for instance by in-process adjustment of the position and/or angular position of the at least one source with respect to the substrate, by adjusting the process parameters or by switching on and/or off particular sources. Errors can be detected quickly and reliably and can be corrected or at least it can be realized that these errors do not occur with subsequent products. This is favorable for the number of produced substrates provided with a material layer which meets the requirement. Production of products which do not meet the requirements is minimized.
• the measuring arrangement for determining the curve and for determining the quality parameters of the deposited layer may comprise an assembly of measuring instruments.
• the measuring arrangement may, for instance, comprise a curve measuring device which is arranged outside the process chamber and comprise an optical quality measuring device which is arranged in the process chamber and which is designed to measure the optical quality of the substrate.
• the quality parameters are measured utilizing the optical properties of the deposited layer, such as color and/or reflection and/or transmission.
• Quality parameters may, for instance, be the layer thickness or the surface quality, such as surface roughness of the layer.
• Different layer thicknesses can result in material which absorbs different frequencies of electromagnetic radiation so that the surface of the substrate may, for instance, comprise different colors. If a substrate has different colors while the layer thickness needs to be uniform, it is possible that the surface quality is not optimal, but the layer thickness could also vary. For coating car windows, usually a visually transparent layer will be applied. The differences in layer thickness can then become manifest in optical differences with electromagnetic beams having wavelengths outside the visible range.
• the control can adjust the amount of material to be deposited and/or the location of the deposition on the basis of the measurement data. This means that the deposition can at all times be adjusted to the conditions. This prevents substrate with material layers having an undesired quality or layer thickness. During deposition, extra material can be deposited at locations where, upon measurement, it is found that there is too little material. In addition, non-controllable environmental factors are less important for disturbance of the deposition process than with a process with preprogrammed positions of the plasma sources and amounts of material to be delivered. If, with the method according to the invention, a disturbing environmental factor occurs, the measuring arrangement will carry out a deviating measurement, after which this is passed on to the control, which then ensures a correct control of the plasma sources to compensate for the observed deviation.
• each plasma source comprises a measuring arrangement. Especially when the substrate surface comprises many differences in level, it is necessary that each plasma source can be brought to the correct position and into the correct angular position with respect to the substrate during the plasma deposition.
• the fact that each plasma source individually comprises a measuring arrangement enables a local surface measurement so that the control process can be realized relatively simply and accurately.
• the invention further relates to an apparatus for applying a material layer to a substrate surface utilizing the method as described hereinabove.
• the known apparatus is, inter alia due to the positioning of the plasma sources with respect to the process chamber, less suitable for providing large three-dimensional substrates with a homogenous material layer which meets the set requirements, such as for instance uniformity.
• the invention contemplates an apparatus which is suitable for providing three-dimensional substrates with material layers, with which the position and the angular position of the at least one source with respect to the substrate are controllable.
• the apparatus comprises at least one process chamber, into which a substrate can be introduced, while the apparatus is provided with at least one plasma source movable with respect to the substrate and at least one measuring arrangement, the measuring arrangement being designed to determine the curve of a three-dimensional surface of the substrate at a location at which, in use of the apparatus, a material layer is to be deposited, the apparatus comprising at least one control for controlling the position and the angular position of the at least one plasma source depending on the measurement data of the at least one measuring arrangement, so that the material to be deposited can be applied to the respective location in a desired manner.
• the plasma sources can move relatively freely through the process chamber, the positioning freedom of the plasma plumes from the plasma sources with respect to the substrate surface is great.
• the size of the process chamber is not the limiting factor for the dimensions of the substrate to be introduced into the process chamber.
• the measuring arrangement in combination with the control, ensures that the deposition process can proceed in a controlled manner. Any manual operations with respect to the control of the surface quality can be minimized, just like the number of products provided with a material layer which does not meet the desired requirements.
• the measuring arrangement may also be designed to determine quality parameters of the deposited layer during and/or after deposition of the layer.
• the measuring arrangement or at least a measuring device thereof, can be arranged in the process chamber.
• the measuring arrangement or at least a measuring device thereof, to be arranged outside the process chamber, the determination of the curve of the substrate taking place prior to the deposition process.
• the determination of the quality parameters may take place automatically after the substrate has been removed from the process chamber.
• the control may be arranged such that the measurement data are also used for controlling the process settings and for switching on and off the at least one plasma source.
• the invention further provides a substrate, provided with a surface with at least one layer of material deposited thereon, while the layer has been deposited utilizing the above-described method and/or has been manufactured with the aid of an above-described apparatus.
• Fig. 1 shows a cross section of a process chamber with a number of plasma sources therein;
• Fig. 2 shows a cross-sectional view of a three-dimensional substrate, in which the movement of the plasma sources can be seen;
• FIG. 3 shows a cross-sectional vie% of a first exemplary embodiment of a manipulator on which a plasma source is mountable;
• Fig. 4 schematically shows, in perspective, a second exemplary embodiment of a manipulator;
• Fig. 5 shows a part of the manipulator shown in Fig. 4 on which the plasma source is mountable
• Fig. 6 shows a side elevational view of the part of the manipulator shown in Fig. 4 with a plasma source mounted thereon.
• Fig. 1 shows a cross section of a process chamber P with a substrate S introduced therein, which has a three-dimensional surface O.
• a number of plasma sources 1 are located to provide the substrate surface O with a material layer 2.
• Each plasma source 1 is provided with a measuring arrangement 3.
• a light beam 4 in this example a laser beam
• the curve C of the substrate surface O is measured at the location where the plasma source 1 is to deposit material.
• the measuring arrangement 3 passes on the measurement data, including the position and the angle, to the control 5.
• the control 5 translates the measurement data into a positioning and a desired delivery amount of the deposition material from the plasma source 1.
• the control 5 then controls the plasma source 1 such that the plasma source 1 deposits material on the substrate surface O in the desired manner.
• the control 5 will position the plasma source 1 such that the angle which the plasma plume 6 makes with the substrate surface O is substantially perpendicular. Also, the control 5 will keep the distance from the plasma source 1 to the substrate surface O substantially equal. Further, the control 5 can control each plasma source 1 individually. This also means that the control 5 can switch on or off each plasma source 1 individually. At a location where the material layer 2 needs to be less thick than at other locations, a plasma source 1 can be switched off sooner or be positioned at a larger distance from, the substrate. Further, the process parameters can be adjusted to adjust the amount of material. The control will also take into account overlap in deposition if multiple sources are used.
• the three-dimensional substrate S is positioned in the process chamber P with the aid of a positioning arrangement 7.
• the substrate S can move through the process chamber P, so that the substrate S can be positioned in an optimal position for deposition with respect to the plasma sources 1.
• the plasma sources 1 are displaceable and rotatable in three dimensions. More limited freedom of movement of the sources is also possible. This will greatly depend on the complexity of the product to be coated.
• a plasma source 1 can also rotate about the axis which is perpendicular to the substrate surface O and also with respect to at least one axis parallel to the substrate surface O. These movements ensure that the plasma source 1 deposits material at the desired location on the substrate surface O in a desired manner at all times.
• the measuring arrangement 3 on the plasma source also measures quality parameters of the applied material layer 2 during deposition.
• the control 5 will adjust the settings of the plasma source 1 on the basis of the measurement data from the measuring arrangement 3. Should the layer of material 2 be too thin at particular locations, then the plasma source can deposit extra material there.
• Fig. 2 shows a cross-sectional view of a three-dimensional substrate S, in which the movement of the plasma source 1 can be seen.
• the substrate S is located in the process chamber P (not drawn).
• Fig. 2 shows one plasma source 1 in different stages of the deposition process. It can clearly be seen that, in stage A, the plasma source 1 is positioned in a particular position with respect to the substrate S.
• the measuring arrangement 3 measures the curve C of the substrate surface O with the aid of the laser beam 4. This measurement needs to take place at least over the surface which is being coated at that moment. It is also possible to measure the shape of the surface in advance, for instance in the load lock, and to store this shape in a memory of the control. Then use can be made of reference points on the product to be coated or on the carrier transporting the product. If the same products are coated, the data can be stored and be used as a reference. On the basis of the curve C measured and optionally stored in the memory, the position of the plasma sources 1 with respect to the substrate surface O is adjusted by the control 5.
• the control 5 ensures that the centerline of a plasma plume 6 formed by the plasma source 1 remains substantially perpendicular to the substrate surface O of the location of deposition.
• stage B it can clearly be recognized that the plasma source 1 has been rotated with respect to the position in stage A.
• the curve of the substrate surface O is different and the measuring arrangement 3 has passed this on to the control 5, which in turn has controlled the plasma source 1.
• the plasma source 1 can then rotate about the axis perpendicular with respect to the substrate surface O, so that homogenous deposition with a non-rotationally symmetric plasma plume 6 is brought about.
• the control 5 will bring about that the distance H between the plasma source 1 and a desired location of the three-dimensional substrate surface O is substantially constant for the successive locations.
• the measuring arrangement 3 then again passes on the measurement data of the shape to the control 5 which controls the plasma source 1.
• Fig. 3 shows a cross-sectional view over the process chamber wall 7 at the location of a manipulator 8 provided in an opening 9 in the process chamber wall 7.
• the manipulator 8 comprises a bar 10 provided with magnets 11 with alternately north and south poles.
• the bar 10 is guided in a guide tube 12 arranged to be displaceable with respect to the process chamber wall 7 via a flexible bellows 13.
• the flexible bellows 13 ensures a gastight sealing between the guide tube 12 and the process chamber wall 7.
• the guide tube 12 may be rotatable in a point of rotation 14 which is arranged fixedly with respect to the process chamber 7.
• the point of rotation 14 may, for instance, be formed by a ball hinge 14.
• a series of coils 15 is placed which can be selectively excited for displacing the bar 10 guided in the tube 12 in the longitudinal direction of the guide tube 12.
• further two linear actuators 16 are connected with which an angular displacement of the guide tube 12 in two planes, which are preferably perpendicular to each other, can be brought about, so that the * end of the bar 10 can be displaced in the directions indicated by the arrows X, Y, Z.
• a plasma source can be placed on the free end 10a of the bar 10.
• the inside of the process chamber is indicated by L in the Figure, while the outside of the process chamber is indicated by E in the Figure.
• FIG. 3 shows a side elevational view of the exemplary embodiment schematically shown in Fig. 5. What is clearly visible is the manner in which the plasma source 1 is mounted on the supporting plate 18.
• the supporting plate 18 is provided with a ring 20 connected therewith provided with gas outlet holes for supplying process gas to the plasma 6 formed by the source 1.
• the linear actuators 17 By controlling the linear actuators 17 in a suitable manner, the position of the supporting plate 18 and accordingly the position of the plasma source 1 can be adjusted in X, Y and Z direction. Both for the exemplary embodiment of Fig. 3 and for the exemplary embodiment of Figs. 4-6, it holds that the angle of the plasma source is also adjustable in space.
• a plasma cascade source of the direct current type in which a carrier gas is excited under relatively high pressure and is injected into a process chamber with a relatively low pressure is particularly suitable for the method and apparatus described due to the fact that this allows a directed plasma plume to be created and the composition of the plasma plume to be controlled properly.
• a plasma cascade source is, for instance, described in WO04/105450, of which application the text and drawings are understood to be incorporated herein by reference.
• the process chamber may, for instance, be equipped to comprise one or more than one substrate at the same time.
• the measuring arrangement may involve different types of measuring methods and the control may also be designed in different manners.

Applications Claiming Priority (2)

Publications (1)

Family

ID=36933367

Family Applications (1)

Country Status (2)

Cited By (1)

Citations (4)

• 2006
  • 2006-01-11 NL NL1030896A patent/NL1030896C2/nl not_active IP Right Cessation
• 2007
  • 2007-01-10 WO PCT/NL2007/000010 patent/WO2007081202A1/en active Application Filing

Patent Citations (4)

Non-Patent Citations (1)

Also Published As

Similar Documents

Legal Events