WO2007067604A3 - Procede de fabrication de films de chalcogenure dopees, alliees et non dopees par depot chimique metal oxyde en phase vapeur - Google Patents

Procede de fabrication de films de chalcogenure dopees, alliees et non dopees par depot chimique metal oxyde en phase vapeur Download PDF

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Publication number
WO2007067604A3
WO2007067604A3 PCT/US2006/046524 US2006046524W WO2007067604A3 WO 2007067604 A3 WO2007067604 A3 WO 2007067604A3 US 2006046524 W US2006046524 W US 2006046524W WO 2007067604 A3 WO2007067604 A3 WO 2007067604A3
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WO
WIPO (PCT)
Prior art keywords
alloyed
doped chalcogenide
films
chalcogenide films
undoped
Prior art date
Application number
PCT/US2006/046524
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English (en)
Other versions
WO2007067604A2 (fr
Inventor
Edwin M Dons
Gary S Tompa
Catherine E Rice
Joseph D Cuchiaro
Original Assignee
Structured Materials Inc
Edwin M Dons
Gary S Tompa
Catherine E Rice
Joseph D Cuchiaro
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Structured Materials Inc, Edwin M Dons, Gary S Tompa, Catherine E Rice, Joseph D Cuchiaro filed Critical Structured Materials Inc
Publication of WO2007067604A2 publication Critical patent/WO2007067604A2/fr
Publication of WO2007067604A3 publication Critical patent/WO2007067604A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne un procédé de fabrication de pellicules de chalcogénure dopées, alliées et non dopées par dépôt chimique en phase vapeur et en particulier un film de GeSbTe qui est un matériau à changement de phase. Ces films sont utiles dans des dispositifs à mémoire électronique et dans d'autres applications. Selon le procédé de l'invention, les précurseurs en phase gazeuse ou vapeur des éléments sont transportés jusqu'à une chambre de réaction où ils sont déposés sur un substrat chauffé dans des conditions régulées.
PCT/US2006/046524 2005-12-06 2006-12-06 Procede de fabrication de films de chalcogenure dopees, alliees et non dopees par depot chimique metal oxyde en phase vapeur WO2007067604A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US74269105P 2005-12-06 2005-12-06
US60/742,691 2005-12-06

Publications (2)

Publication Number Publication Date
WO2007067604A2 WO2007067604A2 (fr) 2007-06-14
WO2007067604A3 true WO2007067604A3 (fr) 2008-01-03

Family

ID=38123449

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/046524 WO2007067604A2 (fr) 2005-12-06 2006-12-06 Procede de fabrication de films de chalcogenure dopees, alliees et non dopees par depot chimique metal oxyde en phase vapeur

Country Status (1)

Country Link
WO (1) WO2007067604A2 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101473382A (zh) 2006-05-12 2009-07-01 高级技术材料公司 相变化记忆体材料的低温沉积
KR101279925B1 (ko) 2006-11-02 2013-07-08 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속 박막의 ｃｖｄ/ａｌｄ용으로 유용한 안티몬 및 게르마늄 착체
US7749802B2 (en) * 2007-01-09 2010-07-06 International Business Machines Corporation Process for chemical vapor deposition of materials with via filling capability and structure formed thereby
US8454928B2 (en) 2007-09-17 2013-06-04 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Tellurium precursors for GST deposition
KR101458953B1 (ko) 2007-10-11 2014-11-07 삼성전자주식회사 Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
WO2009051799A1 (fr) * 2007-10-18 2009-04-23 Structured Materials Inc. Composés sulfure de germanium pour éléments de mémoire à électrolyte solide
SG152203A1 (en) 2007-10-31 2009-05-29 Advanced Tech Materials Amorphous ge/te deposition process
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
KR101489327B1 (ko) * 2008-05-15 2015-02-03 삼성전자주식회사 물질막의 형성 방법 및 메모리 장치의 제조 방법
JP2011522120A (ja) 2008-05-29 2011-07-28 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード 膜堆積用のテルル前駆体
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8236381B2 (en) 2008-08-08 2012-08-07 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal piperidinate and metal pyridinate precursors for thin film deposition
US8691668B2 (en) 2009-09-02 2014-04-08 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Dihalide germanium(II) precursors for germanium-containing film depositions
KR20120123126A (ko) 2010-02-03 2012-11-07 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 박막 증착용 칼코게나이드-함유 전구체, 그의 제조 방법 및 사용 방법
CN113969395B (zh) * 2021-09-14 2023-09-08 上海交大平湖智能光电研究院 一种基于脉冲激光沉积的相变薄膜的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5431738A (en) * 1991-03-19 1995-07-11 Fujitsu Limited Apparatus for growing group II-VI mixed compound semiconductor
US5753936A (en) * 1978-05-04 1998-05-19 Canon Kabushiki Kaisha Image forming member for electrophotography
US6337266B1 (en) * 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US20040168626A1 (en) * 2001-07-20 2004-09-02 Peter Moeck Process for forming semiconductor quantum dots with superior structural and phological stability
US20040231590A1 (en) * 2003-05-19 2004-11-25 Ovshinsky Stanford R. Deposition apparatus for the formation of polycrystalline materials on mobile substrates

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753936A (en) * 1978-05-04 1998-05-19 Canon Kabushiki Kaisha Image forming member for electrophotography
US5431738A (en) * 1991-03-19 1995-07-11 Fujitsu Limited Apparatus for growing group II-VI mixed compound semiconductor
US6337266B1 (en) * 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US20040168626A1 (en) * 2001-07-20 2004-09-02 Peter Moeck Process for forming semiconductor quantum dots with superior structural and phological stability
US20040231590A1 (en) * 2003-05-19 2004-11-25 Ovshinsky Stanford R. Deposition apparatus for the formation of polycrystalline materials on mobile substrates

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Publication number Publication date
WO2007067604A2 (fr) 2007-06-14

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