WO2007057948A1 - ワイヤ放電加工方法、半導体ウエハ製造方法及び太陽電池用セル製造方法 - Google Patents
ワイヤ放電加工方法、半導体ウエハ製造方法及び太陽電池用セル製造方法 Download PDFInfo
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- WO2007057948A1 WO2007057948A1 PCT/JP2005/021002 JP2005021002W WO2007057948A1 WO 2007057948 A1 WO2007057948 A1 WO 2007057948A1 JP 2005021002 W JP2005021002 W JP 2005021002W WO 2007057948 A1 WO2007057948 A1 WO 2007057948A1
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- WIPO (PCT)
- Prior art keywords
- pulse
- wire electrode
- solar cell
- wire
- semiconductor wafer
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H7/00—Processes or apparatus applicable to both electrical discharge machining and electrochemical machining
- B23H7/02—Wire-cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H9/00—Machining specially adapted for treating particular metal objects or for obtaining special effects or results on metal objects
Definitions
- the present invention relates to a wire electric discharge machining method for a defective conductor such as silicon for solar cells, a semiconductor wafer manufacturing method and a solar cell manufacturing method based on the wire electric discharge machining method.
- a low peak current of 0.1A is used for sliced wafers of silicon material with a relatively small specific resistance of about 10 _2 ⁇ 'cm, which is used for epitaxial wafers.
- Patent Document 1 4 pages, 2nd to 9th lines), long pulse width (5 ⁇ sec to several seconds), and low peak current (22 A or less)
- Examples of electrical discharge machining using deionized water as a liquid have been reported (Non-Patent Document 1, page 16, left column, lines 4 to 5 and right column, lines 7 to 24).
- Patent Document 1 Japanese Patent Laid-Open No. 9 248719
- Patent Document 2 Japanese Patent Laid-Open No. 9-253935
- Non-Patent Document 1 Journal of the Electromachining Society Vol. 34, No. 75, 2000
- Non-Patent Document 2 Journal of the Electromachining Society Vol. 30, No. 65, 1996
- a method in which decomposed carbon generated by the thermal action of electric discharge is attached to the surface of a workpiece and machining is continued by using the electrical conductivity of the workpiece has a low machining speed and is impractical.
- this method uses an oil-based machining fluid rather than deionized water, which is generally used for wire discharge power, in terms of fire prevention measures, handling when replenishing the machining fluid, and environmental protection measures. This puts a heavy burden on the user.
- the present invention has been made to solve the above-described problems, and is represented by silicon for solar cells, regardless of whether the processing fluid is oily or deionized water.
- the purpose is to process a defective conductor of 5 ⁇ 'cm or more at a practically sufficient speed.
- the pulse width of the wire electrode is 1 ⁇ sec or more and 4 sec or less, and the peak current during processing of the wire electrode is 10 A or more and 50 A or less.
- a pulse voltage By applying a pulse voltage, a discharge pulse is generated between the wire electrode and a processing object having a specific resistance value of 0.5 ⁇ ′ cm or more and 5 ⁇ ′ cm or less, and the processing object It's what you want.
- the metal component adhering to the processed surface of the semiconductor wafer for solar cells is subjected to discharge processing on the light receiving surface of the semiconductor wafer for solar cells.
- the texturing process is performed using the mask.
- the wire is discharged at a practically sufficient speed without disconnection. Processing is possible.
- electric discharge machining since it is possible to perform electric discharge machining at a practically sufficient speed without breaking hard and brittle materials, it can also be used for manufacturing semiconductor wafers and solar battery cells.
- the metal component adhering to the processed surface by electric discharge machining can be used as a mask, so that the labor and cost of manufacturing the mask can be reduced and the light receiving surface can be easily fined. A texture with irregularities can be formed. Thereby, reflection on the light receiving surface is suppressed, and a solar cell can be easily manufactured with high power generation efficiency.
- FIG. 1 is a diagram showing a slicing step according to Embodiment 1 of the present invention.
- FIG. 2 is a diagram showing a group pulse voltage waveform according to the first embodiment of the present invention.
- FIG. 3 is a diagram showing a relationship between processing conditions and processing speed according to Embodiment 1 of the present invention.
- FIG. 4 is a diagram showing wire electric discharge machining in a pn separation step according to Embodiment 2 of the present invention.
- Fig. 5 is a view showing surface properties of a wafer obtained by a slicing step according to Embodiment 3 of the present invention, where an etching process using an alkali is performed.
- FIG. 6 is a view showing surface properties of a wafer obtained by a slicing process according to Embodiment 3 of the present invention, where an etching process using a mixed acid is performed.
- FIG. 7 is a view showing surface properties of a wafer obtained through a slicing process according to Embodiment 3 of the present invention, which is subjected to reactive ion etching.
- FIG. 8 shows another wire discharge cache process according to the third embodiment of the present invention.
- FIG. 9 is a diagram showing a sculpting electric discharge machining process according to a third embodiment of the present invention.
- the discharge force from the wire electrode is set to a low peak, short pulse condition, and a discharge force is applied to the high specific resistance material.
- FIG. 1 is a diagram showing a slicing process of a high specific resistance material according to Embodiment 1 of the present invention.
- 1 is a wire electrode
- 2 is an electric supply for supplying a current from a machining power source, which will be described later, to the wire electrode 1
- 3 is a current limit set to limit the current supplied to the wire electrode 1.
- 4 is a machining power source that supplies the wire electrode 1 with an electric discharge current used for electric discharge machining via a current limiting resistor 3 and a power supply 2
- 5 is an object to be machined. It is a block.
- Reference numeral 6 denotes a cutting liquid poured into the processing portion between the processing object 5 and the wire electrode 1 during processing.
- the wire discharge carriage device is a device that processes the workpiece 5 by discharge between the wire electrode 1 and the carriage object 5, and includes the wire electrode 1, the power supply 2, the current limiting resistance 3, and Including cab power supply 4.
- a metal wire electrode 1 is connected to one pole of a machining power source 4 via a power supply 2 and a current limiting resistor 3 and travels in the longitudinal direction of the wire electrode.
- the workpiece 5 is connected to the other pole of the machining power source 4, and the relative position is always controlled by a control device (not shown) so as to face the wire electrode 1 with a minute distance.
- An insulating machining liquid 6 is supplied between the wire electrode 1 and the workpiece 5.
- the machining liquid 6 may be sprayed between the wire electrode 1 and the cleaning object 5 by a nozzle, or the wire electrode 1 and the machining object 5 are installed in a processing tank (not shown) for processing.
- a method of filling the processing tank with the liquid 6 may be used.
- the machining power source 4 generates a low peak short pulse discharge described later between the wire electrode 1 and the cache object 5 via the current limiting resistor 3.
- the processing object 5 is removed because the generated electric discharge melts and removes the periphery of the wire electrode 1 because the position of the processing object 5 is controlled so that the distance from the wire electrode 1 is not too far.
- the object 5 moves toward the wire electrode 1 as much as possible. Since this is sequentially repeated, the workpiece 5 is cast in a slit shape. If the end surface of the workpiece 5 or the immediate vicinity of the existing slit is machined in parallel, the silicon is sliced like a wafer.
- FIG. 2 is a conceptual diagram showing a group pulse voltage waveform applied to a wire electrode 1 in FIG. Note that this pulse voltage waveform is different from the pulse current waveform during discharge. Since the pulse current waveform rises when discharge starts after applying this pulse voltage waveform, the width of the pulse current is usually smaller than the width of the pulse voltage. Therefore, by reducing the pulse voltage width applied to the wire electrode 1 and keeping the current peak value low by the current limiting resistor 3, the discharge current waveform becomes a low peak short pulse waveform.
- the reasons for using low peak and short pulse current as the processing conditions are as follows.
- the melting point of silicon is not necessarily higher than that of steel, and since it is a hard and brittle material, it is considered that the periphery of the melted part due to discharge is destroyed by thermal shock. It is assumed that the processing energy required for realization is not so large. Therefore, a method of increasing the discharge repetition frequency and improving the processing speed while generating a small current discharge pulse to prevent wire breakage and wafer breakage, that is, generating a low peak short pulse current at a high repetition frequency. The method of making it suitable will be suitable. In other words, despite the fact that silicon solar cell slicing is a rough erosion process, the finishing force of low peak short pulses with low energy input in a single discharge is required for processing. At first glance, it is an unacceptable measure to apply the matter Is suitable as a processing condition. Based on the above consideration, the slicing force experiment conducted to obtain the machining condition of low peak short pulse applied to the rough machining according to the present invention will be described.
- the table shown in Fig. 3 summarizes the results of slicing experiments performed using the device shown in Fig. 1 and applying the group pulse voltage shown in Fig. 2 to the wire electrode 1, and shows the relationship between the machining conditions and the machining speed. Is shown.
- the used cache object 5 is a polycrystalline silicon block for solar cells having a specific surface resistance of 1.2 ⁇ 'cm and a sliced carving surface of 150 mm X 150 mm.
- the “current limiting resistor” in the table is connected in series to the discharge circuit as described above, and is a resistor for limiting the current value due to the voltage applied to the wire electrode 1 and realizing a low peak current.
- the resistance “open voltage” is the peak value of the pulse voltage applied to the wire electrode 1.
- the current flowing through the wire electrode 1 during discharge never exceeds the value obtained by dividing this "open circuit voltage value” by the "current limiting resistance” value. This value is displayed as “peak current” in this table.
- “ON time” is the time during which the pulse is ON in the group pulse, and is equal to the pulse width.
- the “OFF time” is the time during which pulses between adjacent pulses are OFF during the group pulse.
- “Number of ONZOFF” is the number of ONZOFF of a pulse included in one group pulse, and is equal to the number of included pulses.
- the value obtained by multiplying this number by the sum of “ON time” and “OFF time” is “group pulse 1 duration”.
- “Pause time” indicates the time between the end of one group pulse and the start of the next group pulse.
- the “pause time” shown in Fig. 2 displays a group of pulses as starting from the OFF state, then turning on, and finally ending the ON state and ending the group of pulses.
- “Positive side group pulse” and “Negative side group pulse” indicate whether the voltage value of the pulse applied to the wire electrode 1 is positive or negative, respectively.
- “Aqueous” described in the “Working liquid” column indicates deionized water, and “Processing speed” indicates the processing speed obtained when processing under the processing conditions described in each row in the table.
- the "machining speed" is l It can be said that lmm 2 Zmin or more is preferable.
- Nos. 1 and 2 were tested by alternately inverting the pulse polarity on the positive and negative sides for each group pulse, and No. 3 and later were tested using the negative group pulse. The following can be extracted from Fig. 3.
- the pulse width of the pulse voltage applied to the wire electrode 1 is 1 ⁇ sec or more and 4 ⁇ sec or less
- the machining speed of 11mm 2 Zmin or more is satisfied. This applies to all cases except for No. 10 and No. 14, which are marked as “Unprocessable” in the table. Even if the peak current is 1 OA, the value is slightly smaller than the preferable calorie speed l lmm 2 Zmin. However, since the machining speed in the vicinity can be secured, the lower limit of the peak current may be 10 A.
- the processing speed was the best in No. 9, using an aqueous machining fluid, open-circuit voltage 150 V, current limiting resistance 4 ⁇ (peak current 37.5 A), unipolar pulse , O NZOFF time each 2 ⁇ sec (repetition frequency 250 kHz), ONZOFF number 8 and pause time 70 ⁇ sec.
- the machining speed is improved by making the pause time longer than the group pulse duration.
- No. 3, 4, 5 Both are for unipolar pulses, No. 3 is for the same pause time and group pulse 1 duration, No. 4, 5 is for pause time for group pulse 1 Set longer than duration This is the case. In both cases of No. 4 and 5, the machining speed is improved over that of No. 3. The same effect is observed when the duration of the group pulse 1 is changed from 30 sec to 60 sec.
- the machining speed is l lmm 2 Zmin or more as long as the above condition (1) is satisfied.
- the machining speed with a unipolar pulse is slightly higher than the bipolar pulse. This is because the processing target is P-type silicon, so the unipolar pulse that applies only the pulse whose wire potential is lower than the workpiece is better.
- V ⁇ is preferred as a machining condition rather than a bipolar pulse in which a wire is applied alternately on the positive and negative sides.
- the working fluid is not limited to oil, and even if it is aqueous, the working speed is 11 mm 2 Zmin or more. Furthermore, the processing speed of the aqueous chemistry liquid was higher than that of the oily chemistry liquid (see comparison of No. 9 and No. 15).
- Fig. 3 shows the results of an experiment using a silicon block with a specific resistance value of 1.2 ⁇ 'cm.
- the specific resistance value ranges from 0.5 ⁇ ' cm to 5 ⁇ 'cm. Similar results can be obtained for the workpieces up to.
- the pulse width is 1 ⁇ sec or more and 4 ⁇ sec or less, and the discharge peak current is in the range of 10 to 50 A.
- the machining speed is improved by increasing the pause time for one duration of the group pulse, and the unipolar pulse is slightly improved by the unipolar pulse compared with the bipolar pulse.
- the polarity depends on whether the workpiece is N-type or P-type.
- the present invention is not limited to the slicing force, but is a method generally useful for wire electric discharge machining of a high resistivity material typified by silicon for solar cells.
- the electric discharge machining according to the present invention is applied to a pn separation process in a solar cell manufacturing process.
- FIG. 4 shows the pn separation process according to the present embodiment.
- silicon wafers for solar cells are 0.5
- the back side is a P + type with high conductivity due to the subsequent aluminum electrode formation process.
- the P + layer on the back side is in contact with the n + layer on the wafer surface that becomes the light receiving surface through the n + layer on the wafer side.
- a pn separation process is required to remove the n + layer on the wafer side surface and expose the p layer having a large specific resistance, thereby increasing the electrical resistance of the path from the light receiving surface side to the back surface side.
- the invention according to the third embodiment was obtained by slicing a silicon block having a high specific resistance used for a solar cell with a wire discharge cage under the conditions shown in the first embodiment.
- a texturing process is performed on a silicon wafer by using the metal component adhering to the processed surface as a mask by this electric discharge machining.
- the conventional solar cell manufacturing process includes a slicing process in which a wafer is thinly cut from a silicon block using a wire saw using loose particles, and KOH or the like is used for the silicon wafer obtained by this process. There was a texturing process in which an uneven solution was formed on the surface by etching using an alkaline solution of V.
- the texturing step is a step of forming fine irregularities having the same size as the received light wavelength on the veg surface that reduces the reflected light of the cell surface force.
- an etching process using an alkaline aqueous solution such as potassium hydroxide is used in this texturing process.
- an alkaline aqueous solution such as potassium hydroxide
- a method of miniaturizing the uneven shape by mixing a component that inhibits etching such as alcohol is common, but the effect is not sufficient. There wasn't.
- the specific resistance of silicon used for solar cells is in the range of the specific resistance of the cache object shown in the first embodiment, which is 0.5 ⁇ 'cm or more and 5 Q -cm or less. Included and real Slicing is possible at a practical speed by wire electric discharge machining using the machining conditions shown in Embodiment 1.
- the metal component resulting from the wire electrode material adheres to the surface of the wafer thus sliced. Therefore, the metal component adhering to the wafer surface used as the light receiving surface can be used as a mask function during the texturing process.
- the slicing step for creating a wafer and the step of attaching a metal component that can be used as a mask during texturing to the wafer surface used as a light receiving surface can be simultaneously performed. This eliminates the need for a separate fine mask. This causes non-uniformity in the texturing process, so that a finer texture shape can be easily realized.
- the silicon wafer is sliced by wire discharge force based on the processing conditions according to the present invention, it adheres to the processing surface. It can be said that the obtained metal component is suitable as a mask in the texturing process.
- FIG. 5 is a view showing a wafer cross section when etching with an alkaline aqueous solution is performed using a metal adhering to the wafer surface as a mask.
- a surface in which irregularities having a fine pyramid cross-sectional shape are accumulated at an angle according to the crystal orientation is formed.
- the metal component adhering to the surface by electric discharge acts as a mask to suppress the etching process, so that finer irregularities are formed than the surface of the conventional alkali etching process. Therefore, the visible light average reflectance without an anti-reflection coating can be reduced by about 25% to about 22%.
- FIG. 6 is a view showing a cross section of the wafer when an etching process using a mixed acid is performed using a metal adhering to the wafer surface as a mask. Since the metal component non-uniformly attached to the surface by the discharge cage acts as a mask to make the etching process non-uniform, the irregularities having a fine mortar-shaped cross section as shown in the figure do not depend on the crystal orientation. It is formed on the entire light receiving surface. Therefore, the visible light average reflectance without the antireflection coating is further reduced to about 20%.
- FIG. 7 is a view showing a cross section of the wafer when dry etching treatment by reactive ion etching is performed using a metal adhering to the wafer surface as a mask.
- the mask with metal deposits is sputtered and a micro masking phenomenon that becomes a finer mask occurs, and as shown in the figure, more fine irregularities are superimposed. Is done. Therefore, the reflectance in the entire visible light can be reduced, and the average visible light reflectance without an antireflection coating can be reduced to about 18%.
- the metal component force of the wire electrode adhered to the entire processed surface by electric discharge machining causes a masking action in the texturing process, and is as fine as the incident light wavelength. Since a textured shape with unevenness is formed, reflection on the light receiving surface is suppressed, and a solar cell with high power generation efficiency can be realized.
- the silicon slicing process and the metal component adhesion process can be performed at the same time, so that the process can be simplified.
- the material of the metal wire has a remarkable effect in brass generally used in wire electric discharge machining, but this effect is not limited to brass, copper, zinc, iron, nickel, chromium, Cobalt, aluminum, titanium, molybdenum, tungsten, niobium, tantalum, etc. Any metal! / !.
- a wafer whose surface has been processed by generating a discharge while moving the wire electrode so as to give up the light receiving surface of the wafer already shaped into a thin plate shape may be used.
- Various effects can be achieved.
- a texture shape having fine irregularities can be formed on a wafer that has already been shaped into a thin plate shape, so that not only a wafer sliced from a silicon block but also a ribbon crystal pulling method, etc. In this way, it can be applied to wafers manufactured by the slicing process.
- a die-sinking electric discharge machining using a solid tool electrode 8 may be used. According to this configuration, the attachment of the metal material from the tool electrode can be performed collectively on the entire light receiving surface, so that high-speed processing is possible.
- the rectangular tool electrode as shown in FIG. 9 has an advantage that it is easy to discharge the machining waste even if a discharge is generated on the side surface of the cylindrical electrode rotated around the central axis.
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Abstract
Description
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007545122A JPWO2007057948A1 (ja) | 2005-11-16 | 2005-11-16 | ワイヤ放電加工方法、半導体ウエハ製造方法及び太陽電池用セル製造方法 |
PCT/JP2005/021002 WO2007057948A1 (ja) | 2005-11-16 | 2005-11-16 | ワイヤ放電加工方法、半導体ウエハ製造方法及び太陽電池用セル製造方法 |
CN2005800520950A CN101309770B (zh) | 2005-11-16 | 2005-11-16 | 线放电加工方法、半导体晶片制造方法以及太阳能电池用单元制造方法 |
US12/093,836 US8138442B2 (en) | 2005-11-16 | 2005-11-16 | Wire electric discharge machining method, semiconductor wafer manufacturing method, and solar battery cell manufacturing method |
EP05807024A EP1952928A4 (en) | 2005-11-16 | 2005-11-16 | ELECTROEROSION METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR WAFERS AND METHOD FOR MANUFACTURING SOLAR BATTERY CELLS |
Applications Claiming Priority (1)
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PCT/JP2005/021002 WO2007057948A1 (ja) | 2005-11-16 | 2005-11-16 | ワイヤ放電加工方法、半導体ウエハ製造方法及び太陽電池用セル製造方法 |
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WO2007057948A1 true WO2007057948A1 (ja) | 2007-05-24 |
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PCT/JP2005/021002 WO2007057948A1 (ja) | 2005-11-16 | 2005-11-16 | ワイヤ放電加工方法、半導体ウエハ製造方法及び太陽電池用セル製造方法 |
Country Status (5)
Country | Link |
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US (1) | US8138442B2 (ja) |
EP (1) | EP1952928A4 (ja) |
JP (1) | JPWO2007057948A1 (ja) |
CN (1) | CN101309770B (ja) |
WO (1) | WO2007057948A1 (ja) |
Cited By (2)
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JP2010260151A (ja) * | 2009-05-11 | 2010-11-18 | Okayama Univ | ワイヤ放電加工装置及び放電加工方法 |
US9446465B2 (en) | 2012-10-30 | 2016-09-20 | Mitsubishi Electric Corporation | Wire electric-discharge machining apparatus |
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TWI377102B (en) * | 2009-11-18 | 2012-11-21 | Ind Tech Res Inst | Wire cut electrical discharge machine |
FR2970976A1 (fr) * | 2011-02-01 | 2012-08-03 | Peugeot Citroen Automobiles Sa | Procede de preparation de la surface interieure d'un fut de carter cylindres pour l'application d'un revetement, procede de revetement par projection, et vehicule correspondant |
FR2972659A1 (fr) * | 2011-03-18 | 2012-09-21 | Commissariat Energie Atomique | Procede de traitement par electroerosion d'une surface d'un element en silicium et plaque de silicium obtenue grace a un tel traitement |
CN103447641A (zh) * | 2013-08-30 | 2013-12-18 | 广西锦新科技有限公司 | 一种慢走丝电火花线切割金属丝及其制备方法 |
EP2848349B1 (en) * | 2013-09-12 | 2017-11-08 | Agie Charmilles SA | Method and apparatus for spark-erosion machining of a workpiece |
US10272510B2 (en) * | 2016-01-14 | 2019-04-30 | United Technologies Corporation | Electrical discharge machining apparatus |
CN106876262B (zh) * | 2016-12-30 | 2019-10-25 | 常州星海电子股份有限公司 | 一种制作高效玻璃钝化芯片工艺 |
HUE052127T2 (hu) | 2017-06-27 | 2021-04-28 | Szamitastechnikai Es Automatizalasi Ki | Eljárás kerámia anyagok mikro-szikraforgácsolására |
CN111517274B (zh) * | 2020-04-29 | 2022-03-29 | 中国科学院光电技术研究所 | 一种曲面衬底上微纳结构图形高精度刻蚀传递方法 |
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- 2005-11-16 JP JP2007545122A patent/JPWO2007057948A1/ja active Pending
- 2005-11-16 CN CN2005800520950A patent/CN101309770B/zh active Active
- 2005-11-16 WO PCT/JP2005/021002 patent/WO2007057948A1/ja active Application Filing
- 2005-11-16 EP EP05807024A patent/EP1952928A4/en not_active Withdrawn
- 2005-11-16 US US12/093,836 patent/US8138442B2/en active Active
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JPH02185314A (ja) * | 1989-01-06 | 1990-07-19 | Toshiba Corp | 放電加工方法 |
EP0781619A1 (en) * | 1995-12-15 | 1997-07-02 | Cree Research, Inc. | Method of making silicone carbide wafers from silicon carbide bulk crystals |
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ELECTRIC MACHINING JOURNAL, vol. 34, no. 75, 2000 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010260151A (ja) * | 2009-05-11 | 2010-11-18 | Okayama Univ | ワイヤ放電加工装置及び放電加工方法 |
US9446465B2 (en) | 2012-10-30 | 2016-09-20 | Mitsubishi Electric Corporation | Wire electric-discharge machining apparatus |
Also Published As
Publication number | Publication date |
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US8138442B2 (en) | 2012-03-20 |
CN101309770B (zh) | 2010-08-04 |
JPWO2007057948A1 (ja) | 2009-04-30 |
US20090212026A1 (en) | 2009-08-27 |
EP1952928A4 (en) | 2010-01-13 |
CN101309770A (zh) | 2008-11-19 |
EP1952928A1 (en) | 2008-08-06 |
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