WO2007046415A1

WO2007046415A1 - Exposure apparatus and method of exposure

Info

Publication number: WO2007046415A1
Application number: PCT/JP2006/320738
Authority: WO
Inventors: Motoi Ueda; Soichi Owa
Original assignee: Nikon Corporation
Priority date: 2005-10-18
Filing date: 2006-10-18
Publication date: 2007-04-26
Also published as: TW200725190A; JP2009009954A

Abstract

An exposure apparatus designed so as to effect exposure of a substrate via a liquid, including impurity removing means for removing of impurities contained in the liquid.

Description

Specification

Exposure apparatus and exposure method

Technical field

The present invention relates to an exposure apparatus and an exposure method used in a lithographic process for manufacturing a device such as a semiconductor element, an imaging element (CCD, etc.), a liquid crystal display element, or a thin film magnetic head, for example. is there.

This application claims priority based on Japanese Patent Application No. 2005-303748 filed on October 18, 2005, the contents of which are incorporated herein by reference.

Background art

[0002] When a microdevice such as a semiconductor element is manufactured, a wafer (or a glass plate or the like) coated with a resist as a photosensitive substrate through a projection optical system for an image of a reticle pattern as a mask An exposure apparatus that exposes each upper shot area is used. Conventionally, step-and-repeat type exposure devices (steppers) have been widely used as exposure devices, but recently, step-and-scan type exposure devices that perform exposure by scanning the reticle and wafer synchronously are also available. It's getting attention.

[0003] The resolution of the projection optical system is higher as the exposure wavelength used is shorter and the numerical aperture of the projection optical system is larger. With the miniaturization of integrated circuits, the exposure wavelength used in the exposure apparatus has become shorter year by year, and the numerical aperture of the projection optical system has also increased. Currently, the mainstream exposure wavelength is 248 nm for KrF excimer lasers, and 193 nm for ArF excimer lasers with short wavelengths are also in practical use.

[0004] When performing exposure, the depth of focus (DOF) is important as well as the resolution. Resolution R and depth of focus δ are expressed by the following equations.

R = kλ / ΝΑ

^{δ = k - λ / ΝΑ 2} · '· (2)

2

Here, E is the exposure wavelength, ΝΑ is the numerical aperture of the projection optical system, and k and k are process coefficients. (

1 2

From Eqs. (1) and (2), it can be seen that if the exposure wavelength is shortened and the numerical aperture NA is increased to increase the resolution R, the depth of focus δ becomes narrower. [0005] Therefore, an exposure apparatus using an immersion method that substantially shortens the exposure wavelength and increases the depth of focus has been proposed (for example, see Patent Document 1). This is because the space between the lower surface of the projection optical system and the wafer surface is filled with water or a liquid such as an organic solvent, and the wavelength force of the exposure light in the liquid l / n in air (where n is the refractive index of the liquid (Normally 1.2-2: 1.6) is used to improve the resolution and expand the depth of focus by approximately n times.

Patent Document 1: JP-A-10-303114

Disclosure of the invention

Problems to be solved by the invention

[0006] In the immersion type exposure apparatus, there is a problem that if the transmittance of the liquid decreases, the exposure apparatus does not exhibit a desired performance.

An object of the present invention is to provide an exposure apparatus and an exposure method capable of exposing a substrate with desired performance even when an immersion method is applied.

Means for solving the problem

According to the first aspect of the present invention, there is provided an exposure apparatus that exposes a substrate through a liquid, and includes an impurity removal mechanism that removes impurities contained in the liquid.

[0008] According to this exposure apparatus, it is possible to remove impurities contained in the liquid and perform desired exposure.

[0009] The liquid includes, for example, decahydronaphthalene (C H). The impurities are, for example,

10 18

It is oxygen. The impurity removal mechanism is, for example, an oxygen removal filter.

[0010] According to the second aspect of the present invention, there is provided an exposure method for exposing a substrate through a liquid, wherein impurities contained in the liquid are removed, and exposure is performed through the liquid from which the impurities have been removed. There is provided an exposure method for exposing the substrate by irradiating the substrate with a beam.

[0011] According to the third aspect of the present invention, there is provided an exposure apparatus that exposes a substrate through a liquid, wherein a chamber that substantially seals the substrate and a rare gas is introduced into the chamber An exposure apparatus is provided that includes an introduction port and a discharge port for discharging the rare gas in the chamber.

[0012] According to this exposure apparatus, the liquid is used in an environment where the oxygen concentration is extremely low. That Therefore, it is possible to suppress a decrease in the transmittance of the liquid and perform desired exposure.

[0013] The rare gas is, for example, nitrogen gas, helium gas, argon gas, or a mixed gas thereof.

[0014] According to a fourth aspect of the present invention, there is provided an exposure method for exposing a substrate through a liquid, the substrate being carried into a chamber that substantially seals the substrate, An exposure method is provided in which a rare gas is introduced into the chamber and the rare gas in the chamber is discharged.

[0015] According to the fifth aspect of the present invention, there is provided an exposure apparatus that exposes a substrate through a liquid, the exposure apparatus including a transmittance suppression mechanism that suppresses a decrease in the transmittance of the liquid with respect to an exposure beam. The

[0016] In a fifth aspect, the apparatus further includes a liquid supply mechanism that supplies the liquid, and the transmittance suppression mechanism includes an oxygen removal device that removes oxygen in the liquid supplied from the liquid supply mechanism. It can be configured as follows.

[0017] Further, according to the fifth aspect, the transmittance suppressing mechanism has a predetermined periphery around the liquid on the substrate so that the liquid on the substrate does not come into contact with oxygen. A gas supply mechanism for supplying gas can be included.

[0018] According to a sixth aspect of the present invention, there is provided an exposure apparatus that exposes a substrate by irradiating exposure light through a liquid, the liquid supply unit supplying liquid to the liquid immersion area on the substrate An exposure apparatus is provided that includes a gas supply unit that supplies gas around the liquid on the substrate.

[0019] According to the seventh aspect of the present invention, there is provided an exposure apparatus that exposes a substrate by irradiating exposure light through a liquid, wherein the liquid supply unit supplies the liquid to an immersion area on the substrate. And an exposure apparatus that prevents a decrease in the transmittance of the liquid with respect to the exposure light.

[0020] According to the eighth aspect of the present invention, there is provided an exposure apparatus that exposes a substrate by irradiating exposure light through a liquid, wherein the liquid supply unit supplies the liquid to an immersion region on the substrate. And an exposure apparatus comprising: a chamber that houses the substrate; and a gas supply unit that supplies a rare gas into the chamber.

The invention's effect According to the exposure apparatus and the exposure method of the present invention, the substrate can be exposed in an optimum state even when the liquid immersion method is applied.

Brief Description of Drawings

FIG. 1 is a view showing a schematic configuration of an exposure apparatus used in the first embodiment.

FIG. 2 is a view showing a schematic configuration of an exposure apparatus used in the second embodiment. Explanation of symbols

[0023] R ... reticle, PL ... projection optical system, W ... Ueno, 1 ... illumination optical system, 5 ... liquid supply device, 6 ... liquid recovery device, 7 ... liquid (decalin), 9 ... 10—XY stage, 14 ... Main control system, 21 ... Supply pipe, 21a ... Discharge nozzle, 23 ... Recovery pipe, 23a ... Inlet nozzle, 55 ... Oxygen removal filter, 101 ... Wafer chamber, 102 ... Noble gas Inlet, 103 ... Noble gas outlet BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. FIG. 1 is a view showing a schematic configuration of a step-and-repeat type exposure apparatus that works on the first embodiment. In the following description, the XYZ rectangular coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to this XYZ rectangular coordinate system. In the XYZ Cartesian coordinate system, the X axis and Y axis are set to be parallel to the wafer W, and the Z axis is set to a direction orthogonal to the wafer W. Actually, the XY plane is set to a plane parallel to the horizontal plane, and the Z axis is set to the vertical direction.

In this embodiment, as shown in FIG. 1, the exposure apparatus includes an ArF excimer laser light source that is an exposure light source, and includes illumination optical optics including an optical integrator (homogenizer), a field stop, a condenser lens, and the like. System 1 is provided. Exposure light (exposure beam) IL made up of ultraviolet pulsed light having a wavelength of 193 nm emitted from a light source passes through illumination optical system 1 and illuminates a pattern provided on reticle (mask) R. The light that has passed through the reticle R passes through the telecentric projection optical system PL on both sides (or one side on the wafer W side) and is projected to a predetermined projection magnification β (for example, on the exposure region on the wafer (substrate) W coated with the photoresist. , Β is 1Ζ4, 1Ζ5, etc.).

[0026] The exposure light IL includes, for example, an emission line (g-line, h-line, i-line) emitted from a mercury lamp force, far ultraviolet light (DUV light) such as Kr F excimer laser light (wavelength 248 nm), ArF excimer laser light (Wavelength 193nm) and vacuum ultraviolet light (VUV light) such as F laser light (wavelength 157nm)

2

I can.

In the present embodiment, the wafer includes a substrate in which a film such as a photosensitive material (photoresist) or a protective film is applied. The reticle includes a device pattern on which a reduced projection is formed on a substrate. In the present embodiment, a force reflection type using a transmission type as a reticle may be used.

The reticle R is held on the reticle stage RST, and a mechanism for finely moving the reticle R in the X direction, the Y direction, and the rotation direction is incorporated in the reticle stage RST. The positions of the reticle stage RST in the X, Y, and rotational directions are measured and controlled in real time by a reticle laser interferometer (not shown).

The wafer W is fixed on the Z stage 9 via a wafer holder (not shown). τ Tage 9 moves along a plane that is substantially parallel to the image plane of projection optical system PL ΧΥ It is fixed on stage 10 and controls the position of wafer W (position in the Z direction) and tilt angle To do. The positions of the Z stage 9 in the X direction, the Y direction, and the rotation direction are measured and controlled in real time by a wafer laser interferometer 13 using a movable mirror 12 positioned on the Z stage 9. The XY stage 10 is mounted on the base 11 and controls the X direction, Y direction, and rotation direction of the wafer W.

The exposure apparatus includes a main control system 14 that adjusts the position of the reticle R in the X direction, the Y direction, and the rotation direction based on the measurement value measured by the reticle laser interferometer. That is, the main control system 14 adjusts the position of the reticle R by sending a control signal to the mechanism incorporated in the reticle stage RST and finely moving the reticle stage RST.

Further, the main control system 14 aligns the surface on the wafer W with the image plane of the projection optical system PL by the autofocus method and the autoleveling method, so that the focus position of the wafer W (position in the Z direction) and Adjust the tilt angle. That is, the main control system 14 transmits a control signal to the wafer stage drive system 15 and drives the Z stage 9 by the wafer stage drive system 15 to adjust the focus position and tilt angle of the wafer W. Further, the main control system 14 adjusts the position of the wafer W in the X direction, the Y direction, and the rotation direction based on the measurement values measured by the wafer laser interferometer 13. That is, the main control system 14 The control signal is transmitted to the stage drive system 15 and the wafer stage drive system 15 drives the XY stage 10 to adjust the position of the wafer W in the X direction, Y direction, and rotation direction.

[0032] The laser interferometer 13 can measure the position of the Z stage 9 in the Z-axis direction and the rotation information in the ΘX and θY directions. For example, see JP-A-2001-510577. (Corresponding to International Publication No. 1999/28790 pamphlet). Further, instead of fixing the movable mirror 12 to the Z stage 9, for example, a reflecting surface formed by mirror-applying a part of the Z stage 9 (side surface, etc.) can be used.

In addition, the focus / leveling detection system measures the position information of the wafer W in the Z-axis direction at each of the plurality of measurement points, so that the tilt information (rotation information) of the wafer W in the ΘX and ΘY directions is rotated. The multiple measurement points may be set at least partially within the immersion area (or projection area), or all of them may be set outside the immersion area. You can be done. Furthermore, for example, when the laser interferometer 13 can measure the position information of the wafer W in the Z-axis, θ X and θ Y directions, the position information in the Z-axis direction can be measured during the wafer W exposure operation. The position of the wafer W with respect to the Z-axis, θ X and θ Y directions using the measurement results of the laser interferometer 13 during the exposure operation, at least during the exposure operation. Control may be performed.

The projection optical system PL of the present embodiment is a reduction system whose projection magnification is, for example, 1/4, 1/5, 1/8, etc., and a reduced image of the mask pattern is displayed in a projection area conjugate with the illumination area. Form. Note that the projection optical system PL may be any of a reduction system, an equal magnification system, and an enlargement system. Further, the projection optical system PL may be any of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, and a catadioptric system that includes a reflective optical element and a refractive optical element. Further, the projection optical system PL may form either an inverted image or an erect image.

At the time of exposure, the main control system 14 transmits a control signal to the wafer stage drive system 15, and drives the XY stage 10 by the wafer stage drive system 15, so that each shot area on the wafer W is changed. Step by step to the exposure position. That is, the operation of exposing the pattern image of the reticle R onto the wafer W by the step-and-repeat method is repeated.

In this exposure apparatus, the exposure wavelength is substantially shortened and the resolution is improved. Therefore, the immersion method is applied. Here, in the exposure apparatus to which the immersion method is applied, at least while the pattern image of the reticle R is transferred onto the wafer W, the surface of the wafer W and the transmission optics on the wafer W side of the projection optical system PL are transmitted. A predetermined liquid 7 is filled between the elements 4. The projection optical system PL includes a lens barrel 3 that houses a plurality of optical elements formed of synthetic quartz glass or the like that constitutes the projection optical system PL. In this projection optical system PL, the transmissive optical element 4 closest to the wafer W is made of synthetic quartz glass, and only the surface of the transmissive optical element 4 is in contact with the liquid 7. As a result, corrosion or the like of the lens barrel 3 which is a metallic force is prevented.

The transmission optical element 4 may be formed of a material having a higher refractive index than quartz, Z, or fluorite (eg, 1.6 or more). For example, the optical element of the projection optical system can be formed using sapphire, germanium dioxide, or the like as disclosed in WO 2005/059617. Alternatively, the optical element of the projection optical system can be formed using potassium chloride (refractive index: about 1.75) or the like as disclosed in International Publication No. 2005/059618.

[0038] In the present embodiment, the liquid 7 is decahydronaphthalene (C

H) (hereinafter referred to as decalin) is used.

10 18

In this embodiment, the exposure apparatus includes a liquid supply device 5 that controls the supply of decalin 7 and a liquid recovery device 6 that controls the discharge of decalin 7.

[0040] The liquid supply device 5 includes a decalin 7 tank (not shown), a pressure pump (not shown), a temperature control device (not shown), an oxygen removal filter 55, and the like. Further, a discharge nozzle 2 la having a thin tip on the wafer W side is connected to the liquid supply apparatus 5 via a supply pipe 21. The liquid supply device 5 adjusts the temperature of the decalin 7 by the temperature control device, and supplies the decalin 7 whose temperature is adjusted from the discharge nozzle 21 a via the supply pipe 21 onto the wafer W. Note that the temperature of the decalin 7 is set by the temperature control device, for example, to the same level as the temperature in the chamber in which the exposure apparatus is accommodated.

[0041] The liquid recovery device 6 includes a tank (not shown) of decalin 7, a suction pump (not shown), and the like. In addition, an inflow nozzle 23a having a wide tip is connected to the liquid recovery apparatus 6 via a recovery pipe 23. [0042] The liquid recovery apparatus 6 recovers the decalin 7 from the inflow nozzle 23a via the recovery pipe 23 with the upper force of the wafer W.

[0043] According to this exposure apparatus, since the oxygen removing filter 55 for removing oxygen contained in the decalin 7 is provided in the liquid supply device 5, it is possible to prevent a decrease in the transmittance of the decalin 7 due to oxygen absorption. it can.

In the present embodiment, the oxygen removing filter is provided in the liquid supply device 5, but it may be provided in the supply pipe 21.

[0045] Next, a second embodiment will be described. FIG. 2 is a front view showing the lower part of the projection optical system PLA, the liquid supply device 5, the liquid recovery device 6 and the like of the step-and-scan type exposure apparatus which is useful for the second embodiment. In the following description, components that are the same as or equivalent to those in the above-described embodiment are denoted by the same reference numerals, and the description thereof is simplified or omitted.

The wafer chamber 101 is provided so as to substantially seal the wafer W, the Z stage 9, the XY stage 10, the supply pipe 21, or the recovery pipe 23. A rare gas inlet 102 for introducing nitrogen gas into the wafer chamber 101 and a rare gas outlet 103 for discharging nitrogen gas are provided. The rare gas inlet 102 is connected to a nitrogen tank (not shown). The rare gas outlet is connected to a filter (not shown).

According to this exposure apparatus, since Decalin 7 is filled between wafer W and projection optical system PL in a nitrogen atmosphere, it is possible to prevent a decrease in transmittance due to oxygen absorption of decalin.

In the present embodiment, decalin 7 is filled between wafer W and projection optical system PL under a nitrogen atmosphere in wafer chamber 101. Instead, as disclosed in, for example, Japanese Patent Application Laid-Open No. 2004-289126, nitrogen may be used as a gas used in a gas seal mechanism for containing liquid (decalin) 7 in a predetermined region.

In this embodiment, nitrogen is used as a rare gas, but helium gas, argon gas, or a mixed gas thereof may be used.

[0050] In the present embodiment, decahydronaphthalene (decalin) is used as the high refractive index liquid. However, the present invention is not limited to this. For example, 1,1-dicyclohexyl (chemical formula C H), Tetrahydrodicyclohexagen (Chemical Formula CH), Perhydropyrene (Chemical Formula)

22 12 20

C H).

16 26

[0051] In each of the above embodiments, decahydronaphthalene (C H

Ten

) Force using cis-decahydronaphthalene (C H), trans-decahydronaphthalene (C

18 10 18 10

H) and mixtures thereof may be used.

18

[0052] In each of the above-described embodiments, the liquid or oxygen in the liquid is allowed in a range that does not affect the exposure. For example, a slight amount of oxygen may be contained in the liquid or the liquid as long as the exposure processing or the exposure apparatus does not cause inconvenience.

In each of the above-described embodiments, the configuration of the immersion system that fills the optical path space between the optical element 4 and the wafer W with the liquid is not limited to the above-described configuration, and various configurations can be adopted. it can. For example, configurations as disclosed in US Patent Publication No. 2004Z0165159 and International Publication No. 2004/055 803 can be adopted.

[0054] The form of the immersion system including Nozunore is not limited to the above-described one. Nosole members disclosed in Japanese Patent No. 6,952,253) may also be used. Specifically, in each of the embodiments described above, the lower surface of the nozzle member is set to the same height (Z position) as the lower end surface (exit surface) of the projection optical system. It may be set closer to the image plane side (substrate side) than the lower end surface of the projection optical system. In this case, a part (lower end) of the nozzle member may be provided so as to be submerged to the lower side of the projection optical system (final optical element) so as not to block the exposure light. Further, a supply port may be provided on the lower surface of the nozzle member, for example, a supply port may be provided on the inner side surface (inclined surface) of the nozzle member facing the side surface of the final optical element of the projection optical system.

In each of the above-described embodiments, the force is used to measure the position information of the reticle stage and the wafer stage (Z stage, XY stage) using an interferometer system. You can also use an encoder system that detects the scale (diffraction grating). In this case, it is preferable that the hybrid system includes both the interferometer system and the encoder system, and the measurement result of the encoder system is calibrated using the measurement result of the interferometer system. Also, the interferometer system and Yenko It is also possible to control the position of the stage by switching between the driver system and using both.

In each of the above embodiments, an optical element is attached to the tip of the projection optical system, and the optical characteristics of the projection optical system, for example, aberration (spherical aberration, coma aberration, etc.) are adjusted by this optical element. Can do. The optical element attached to the tip of the projection optical system may be an optical plate used for adjusting the optical characteristics of the projection optical system. Alternatively, it may be a plane parallel plate (such as a cover glass) that can transmit exposure light.

[0057] When the pressure between the optical element at the tip of the projection optical system and the substrate generated by the flow of the liquid is large, the optical element is not allowed to be exchanged. You can fix it firmly.

In each of the above embodiments, the space between the projection optical system and the substrate surface is filled with the liquid. For example, the liquid is filled with a cover glass made of a plane-parallel plate attached to the surface of the substrate. It may be a configuration.

The substrate (wafer) of each of the above embodiments is not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate for a display device, a ceramic wafer for a thin film magnetic head, or a mask used in an exposure apparatus. Or reticle reticles (synthetic quartz, silicon wafers) are used.

[0060] As an exposure apparatus, in addition to a step-and-'scan type scanning exposure apparatus (scanning stepper) that scans and exposes a mask pattern by moving a mask (reticle) and a substrate (wafer) synchronously. The present invention can also be applied to a step-and-repeat projection exposure apparatus (stepper) in which a mask pattern is collectively exposed while the mask and the substrate are stationary, and the substrate is sequentially moved stepwise.

[0061] In addition, the exposure apparatus projects a reduced image of the first pattern with the first pattern and the substrate substantially stationary, for example, a refraction-type projection optical system that does not include a reflective element at a 1/8 reduction magnification. The present invention can also be applied to an exposure apparatus that performs batch exposure on a substrate using a system. In this case, after that, with the second pattern and the substrate being substantially stationary, a reduced image of the second pattern is exposed onto the substrate in a lump by partially overlapping the first pattern using the projection optical system. It can also be applied to a batch type batch exposure apparatus. As a stitch type exposure device The method can also be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially superimposed and transferred on a substrate and the substrate is moved sequentially.

In the above embodiments, the exposure apparatus provided with the projection optical system has been described as an example. However, the present invention can be applied to an exposure apparatus and an exposure method that do not use the projection optical system. Even when the projection optical system is not used, the exposure light is irradiated onto the substrate via an optical member such as a mask or a lens, and a liquid immersion area is formed in a predetermined space between the optical member and the substrate. It is formed.

[0063] Further, the present invention is disclosed in, for example, Japanese Patent Laid-Open Nos. 10-163099 and 10-214783 (corresponding US Pat. No. 6,590,634), and Japanese Translation of PCT International Publication No. 2000-505958 (corresponding US Pat. 5, 969, 441), US Pat. No. 6,208,407, etc., and can be applied to a multi-stage type exposure apparatus having a plurality of substrate stages. In this case, the above immersion system may be provided on all stages or only on some stages.

[0064] Further, as disclosed in JP-A-11 135400 (corresponding international publication 1999/23692), JP-A 2000-164504 (corresponding US Pat. No. 6,897,963), etc. The present invention can also be applied to an exposure apparatus that includes a substrate stage that holds a substrate, and a measurement stage on which a reference member on which a reference mark is formed and various photoelectric sensors are mounted.

Further, in the above-described embodiment, a force that employs an exposure apparatus that locally fills a liquid between the projection optical system and the substrate. The present invention is disclosed in, for example, Japanese Patent Application Laid-Open No. 6-124873, JP-A-10-303114, US Pat. No. 5,825,043, etc. discloses an immersion exposure apparatus that performs exposure while the entire surface of the substrate to be exposed is immersed in a liquid. Is also applicable.

[0066] The type of exposure apparatus is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on a substrate, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an imaging element ( It can be widely applied to exposure equipment for manufacturing CCD), micromachines, MEMS, DNA chips, or reticles or masks.

In the embodiment described above, a predetermined light shielding pattern (or position) is formed on a light transmissive substrate. Force using a light-transmitting mask formed with a phase pattern (dimming pattern). Instead of this mask, for example, as disclosed in US Pat. No. 6,778,257, the electrons of the pattern to be exposed An electronic mask (also called a variable shaping mask) that forms a transmission pattern, reflection pattern, or light emission pattern based on the data. For example, DMD (Digital Micro-) is a type of non-light-emitting image display device (spatial light modulator). mirror Device) etc.) may be used.

[0068] Further, as disclosed in, for example, International Publication No. 2001/035168, an exposure apparatus (lithography system) that exposes a line and space pattern on a substrate by forming interference fringes on the substrate. ) Can also be applied to the present invention.

[0069] Further, as disclosed in, for example, JP-T-2004-519850 (corresponding US Pat. No. 6,611,316), two mask patterns are combined on a substrate via a projection optical system. The present invention can also be applied to an exposure apparatus that performs double exposure of one shot area on the substrate almost simultaneously by one scan exposure.

[0070] It should be noted that as far as permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in the above embodiments and modifications are incorporated herein by reference.

As described above, the exposure apparatus is manufactured by assembling various subsystems including each component so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, The electrical system is adjusted to achieve electrical accuracy. The assembly process from various subsystems to the exposure system includes mechanical connections, electrical circuit wiring connections, and pneumatic circuit piping connections between the various subsystems. It goes without saying that there is an assembly process for each subsystem before the assembly process from these various subsystems to the exposure system. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies for the exposure apparatus as a whole. It is desirable to manufacture the exposure apparatus in a clean room where the temperature and cleanliness are controlled. For microdevices such as semiconductor devices, the step of designing the function and performance of the microdevice, the step of manufacturing a mask (reticle) based on this design step, the step of manufacturing the substrate which is the base material of the device, the implementation described above Steps including substrate processing processes such as a process of exposing a mask pattern onto a substrate by an exposure apparatus of a form, a process of developing the exposed substrate, heating (curing) and etching of the developed substrate, device assembly step (dicing process, This includes manufacturing processes such as bonding processes and packaging processes, and inspection steps.

Claims

The scope of the claims

[I] An exposure apparatus that exposes a substrate through a liquid,

An exposure apparatus comprising an impurity removal mechanism for removing impurities contained in the liquid.

[2] The exposure apparatus according to [1], wherein the liquid contains decahydronaphthalene (C H).

10 18

[3] The exposure apparatus according to [1] or [2], wherein the impurity is oxygen.

4. The exposure apparatus according to claim 1, wherein the impurity removal mechanism is an oxygen removal filter.

[5] An exposure method for exposing a substrate through a liquid,

Removing impurities contained in the liquid;

An exposure method in which the substrate is exposed by irradiating the substrate with an exposure beam through the liquid from which the impurities have been removed.

6. The exposure method according to claim 5, wherein the liquid contains decahydronaphthalene (C H).

10 18

7. The exposure method according to claim 5 or 6, wherein the impurity is oxygen.

[8] An exposure apparatus that exposes a substrate through a liquid,

A chamber for substantially sealing the substrate;

An inlet for introducing a rare gas into the chamber;

An exposure apparatus comprising: a discharge port for discharging a rare gas in the chamber.

9. The exposure apparatus according to claim 8, wherein the rare gas is nitrogen gas, helium gas, argon gas, or a mixed gas thereof.

[10] An exposure method for exposing a substrate through a liquid,

Loading the substrate into the chamber,

Introducing a rare gas into the chamber,

An exposure method for discharging a rare gas in the chamber.

[II] The exposure method according to claim 10, wherein the rare gas is nitrogen gas, helium gas, argon gas, or a mixed gas thereof.

[12] An exposure apparatus that exposes the substrate through the liquid, and

An exposure apparatus comprising a transmittance suppression mechanism that suppresses a decrease in the transmittance of the liquid with respect to an exposure beam.

13. The exposure apparatus according to claim 12, wherein the liquid contains decahydronaphthalene (C H).

10 18

[14] The apparatus further comprises a liquid supply mechanism for supplying the liquid,

14. The exposure apparatus according to claim 13, wherein the transmittance suppressing mechanism includes an oxygen removing device that removes oxygen in the liquid supplied from the liquid supply mechanism.

15. The transmittance control mechanism includes a gas supply mechanism that supplies a predetermined gas around the liquid on the substrate so that the liquid on the substrate does not come into contact with oxygen. Exposure equipment.

[16] An exposure apparatus that exposes a substrate by irradiating exposure light through a liquid,

A liquid supply section for supplying a liquid to an immersion area on the substrate;

An exposure apparatus comprising: a gas supply unit that supplies a gas around the liquid on the substrate.

17. The exposure apparatus according to claim 16, wherein the gas is a rare gas.

18. The exposure apparatus according to claim 17, wherein the rare gas is nitrogen gas, helium gas, argon gas, or a mixed gas thereof.

19. The exposure apparatus according to claim 16, further comprising a storage unit that stores the gas and the substrate.

[20] An exposure apparatus that exposes a substrate by irradiating exposure light through a liquid,

An exposure apparatus comprising: a transmittance decrease prevention mechanism that prevents a decrease in the transmittance of the liquid with respect to the exposure light.

21. The exposure apparatus according to claim 20, wherein the transmittance lowering prevention mechanism is a rare gas supply unit that supplies a rare gas around the liquid on the substrate.

22. The exposure apparatus according to claim 21, wherein the transmittance reduction preventing mechanism further includes a storage unit that stores a liquid on the substrate and a rare gas supplied from the rare gas supply unit.

23. The exposure apparatus according to claim 20, wherein the transmittance reduction preventing mechanism is an oxygen removing member that removes oxygen contained in the liquid.

24. The exposure apparatus according to claim 23, wherein the oxygen removing member is an oxygen removing filter.

[25] An exposure apparatus that exposes a substrate by irradiating exposure light through a liquid, A liquid supply section for supplying a liquid to an immersion area on the substrate;

A chamber for storing the substrate;

An exposure apparatus comprising a gas supply unit that supplies a rare gas into the chamber.

26. The exposure apparatus according to claim 25, wherein the rare gas is nitrogen gas, helium gas, argon gas, or a mixed gas thereof.

27. The exposure apparatus according to claim 25, further comprising a gas recovery unit that recovers the rare gas from within the chamber.