WO2007043764A1 - Atmospheric pressure plasma shower unit, and equipment and method for manufacturing semiconductor package using the same - Google Patents

Atmospheric pressure plasma shower unit, and equipment and method for manufacturing semiconductor package using the same Download PDF

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Publication number
WO2007043764A1
WO2007043764A1 PCT/KR2006/003954 KR2006003954W WO2007043764A1 WO 2007043764 A1 WO2007043764 A1 WO 2007043764A1 KR 2006003954 W KR2006003954 W KR 2006003954W WO 2007043764 A1 WO2007043764 A1 WO 2007043764A1
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WO
WIPO (PCT)
Prior art keywords
plasma
electrode part
substrate
atmospheric pressure
shower unit
Prior art date
Application number
PCT/KR2006/003954
Other languages
French (fr)
Inventor
Hae Ryong Lee
Keun Ho Lee
Jong Moon Baek
Young Jong Yoo
Dong Jin Um
Original Assignee
Psm Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Psm Inc. filed Critical Psm Inc.
Priority to JP2008534435A priority Critical patent/JP2009511246A/en
Publication of WO2007043764A1 publication Critical patent/WO2007043764A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H05H1/2418—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes the electrodes being embedded in the dielectric
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    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85013—Plasma cleaning
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the present invention relates to the field of manufacture of a semiconductor package, and more specifically, to an atmospheric pressure plasma shower unit for use in manufacturing a semiconductor package. Particularly, the present invention relates to a technique for cleaning a substrate of a semiconductor package using an atmospheric pressure plasma shower unit before a wire bonding process is initiated, in the field of manufacture of the semiconductor package.
  • a semiconductor package is completely manufactured through various unit processes such as die attaching, wire bonding, molding and the like. Further, a process of cleaning a semiconductor component, which has been processed in a preceding process, is added between a finish of the preceding process and a start of a subsequent process in consecutive processes. Such a cleaning process is used to remove various kinds of foreign substances that are generated when a semiconductor component is processed, thereby improving the reliability of an overall semiconductor chip package manufacturing process.
  • Wire bonding is a process of connecting a semiconductor chip to a lead of a chip- mounting substrate by means of a conductive metal wire. It is required to clean the chip-mounting substrate processed in a preceding process so as to guarantee the reliability of the process.
  • a vacuum plasma cleaning process has been prevailingly used as a cleaning process before the wire bonding process.
  • a conventional vacuum plasma cleaning equipment used before a wire bonding process includes an active electrode and a ground electrode facing the active electrode within a vacuum chamber and is constructed to generate plasma in the vacuum chamber by applying a high voltage to the active electrode and by introducing a reaction gas such Ar into the vacuum chamber.
  • the conventional wire bonding apparatus disclosed therein includes an atmospheric pressure plasma cleaning apparatus provided at a front end thereof.
  • the atmospheric pressure plasma cleaning apparatus is constructed such that an index rail passes through between a pair of upper and lower electrode parts each of which has a laminated structure of a plate-shaped metal electrode and a plate-shaped dielectric, and that atmospheric pressure plasma cleaning is performed on a chip-mounting substrate moving along the index rail. Disclosure of Invention Technical Problem
  • the prior art discloses that the reaction gas (N ) is supplied between the pair of electrode parts.
  • the index rail should pass through between the electrode parts, there is a technical limitation in that it is difficult to appropriately supply the reaction gas and generate plasma.
  • the plasma generated by the el ectrode structure of the prior art may generate an arc on an object to be treated (especially, a chip-mounting substrate), resulting in damage to the chip-mounting substrate.
  • the atmospheric pressure plasma cleaning apparatus disclosed in the prior art has the electrode part with a boat-type structure in which the plate-shaped metal electrode is laminated on the dielectric, there are problems in that the metal electrode structure having a larger thickness and surface area requires extension of insulation length and a quantity of parasitic discharge is also inevitably produced. Specifically, since the parasitic discharge described above increases the temperate of the apparatus, there are problems in that a cooling means should be installed and the apparatus becomes bulky accordingly.
  • an object of the present invention is to provide an atmospheric pressure plasma shower unit that is configured to emit plasma toward an object to be treated (especially, a chip-mounting substrate) in a shower manner, is very advantageous to plasma cleaning of the object to be treated which is carried by a carrying means, and solves the problems in the prior art such as increase in temperature due to parasitic discharge.
  • Another object of the present invention is to provide an equipment and method for manufacturing a semiconductor package, wherein plasma is emitted in a shower manner toward a substrate, which is carried by a carrying means, to perform plasma cleaning for the substrate before a process such as a wire bonding process is initiated, and the process such as the wire bonding process for the substrate moved by the carrying means is then performed, thereby considerably shortening process time and simultaneously improving the reliability of the process.
  • An atmospheric pressure plasma shower unit of the present invention comprises an active electrode part formed of a pattern electrode on a dielectric and activated when a high voltage is applied to the pattern electrode; and a ground electrode part disposed to generate plasma between the active electrode part and the ground electrode part and formed with a plurality of plasma holes through which the generated plasma is emitted outwardly.
  • the atmospheric pressure plasma shower unit may further comprise an insulating electrode shield formed to cover the pattern electrode. Further, in this embodiment of the present invention, the plasma holes formed in the ground electrode part may be arranged to correspond to a pattern of the pattern electrode.
  • a semiconductor package manufacturing equipment comprises a carrying means moved to carry a substrate positioned thereon, wherein a chip has been mounted or is to be mounted on the substrate; an atmospheric pressure plasma shower unit which includes an active electrode part and a ground electrode part formed with a plurality of plasma holes and is disposed over the carrying means so that plasma generated between the active electrode part and the ground electrode part can be emitted through the plasma holes toward the substrate positioned on the carrying means to clean an upper portion of the substrate; and a processing unit for performing a subsequent semiconductor process on the substrate which has been cleaned in the atmospheric pressure plasma shower unit and then carried by the carrying means.
  • the processing unit may be a wire bonding unit for performing a wire bonding process on the substrate with the semiconductor chip mounted thereon.
  • the processing unit may be a unit for performing one of various processes, such as molding, heat treatment, die attaching or ball attaching, in addition to the wire bonding on the substrate.
  • the present invention also discloses a method for manufacturing a semiconductor package.
  • the method for manufacturing a semiconductor package comprises the steps of (a) positioning a substrate on a carrying means, and moving the carrying means to move the substrate, wherein a chip has been mounted or is to be mounted on the substrate; (b) emitting plasma in a shower manner from above the substrate toward the substrate to clean an upper portion of the substrate while the substrate is moved by the carrying means or is in a stationary state; and (c) performing a subsequent semiconductor process on the substrate carried by the carrying means after the cleaning.
  • a wire bonding process may be performed on the substrate with the chip mounted thereon, which has been cleaned in step (b).
  • an atmospheric pressure plasma shower unit comprising an active electrode part and a ground electrode part formed with a plurality of plasma holes may be used to emit plasma generated between the active electrode part and the ground electrode part through the plasma holes in the shower manner.
  • the atmospheric pressure plasma shower unit according to the present invention has an advantage in that plasma enough to perform a plasma cleaning process is generated only with a small amount of power consumption. Further, since the atmospheric pressure plasma shower unit according to the present invention has a compact structure and is constructed to emit plasma generated in the plasma shower unit outwardly in a shower manner, it can be advantageously used to clean a substrate in a semiconductor package manufacturing equipment such as a wire bonding equipment.
  • a metal electrode formed on a dielectric comprises a pattern electrode that is covered with an insulating electrode shield in the present invention, it is possible to prevent increases in the temperatures of the plasma shower unit and a semiconductor package manufacturing equipment including the plasma shower unit by resistance heat due to application of a higher voltage. This eliminates a need for installation of a cooling means, which is required to prevent an increase in the temperature of a conventional plasma cleaning apparatus, thereby improving economic efficiency and preventing the apparatus from being bulky.
  • the present invention since the present invention has a structure in which the plasma shower unit is mounted over the carrying means, substrates cleaned in the plasma shower unit can be immediately carried to a subsequent processing unit such as a wire bonding unit. This reduces standby time before the subsequent process. Accordingly, it is possible to secure the reliability of the subsequent semiconductor package process, especially the wire bonding process.
  • FIG. 1 is a sectional perspective view of an atmospheric pressure plasma shower unit according to an embodiment of the present invention, showing the inner con- figuration of the atmospheric pressure plasma shower unit.
  • FIG. 2 is a schematic sectional view of the atmospheric pressure plasma shower unit shown in Fig. 1.
  • FIGs. 3 to 5 are views illustrating the structures of electrode parts of the atmospheric pressure plasma shower unit according to the embodiment of the present invention, showing an active electrode part, a ground electrode part, and an superimposed state of the active and ground electrode parts, respectively.
  • FIG. 6 schematically shows a semiconductor package manufacturing equipment according to an embodiment of the present invention.
  • Plasma shower unit 12 Active electrode part
  • FIG. 1 is a sectional perspective view of an atmospheric pressure plasma shower unit according to an embodiment of the present invention, showing the inner configuration of the atmospheric pressure plasma shower unit;
  • Fig. 2 is a sectional view of the atmospheric pressure plasma shower unit shown in Fig. 1; and
  • Figs. 3 to 5 are plan views showing an active electrode part, a ground electrode part, and a state where the two electrode parts are arranged to face each other in the atmospheric pressure plasma shower unit according to the embodiment of the present invention, respectively.
  • the plasma shower unit 10 includes an active electrode part 12 and a ground electrode part 16. Further, the active electrode part 12 and the ground electrode part 16 are positioned in a reaction chamber 18 that is compartmentally defined by a frame 17. Specifically, the ground electrode part 16 is integrally connected to a portion of a lower wall of the frame 17 while being disposed to face inner and outer sides of the reaction chamber 18.
  • the active electrode part 12 is a part to which high voltage power is applied, and includes a dielectric 122 made of ceramic for forming atmospheric pressure plasma by means of dielectric barrier discharge (DBD). More specifically, the active electrode part 12 comprises the dielectric 122 and pattern electrodes 124a and 124b which are printed with a predetermined pattern on the dielectric 122. Since the metal electrode formed on the dielectric 122 comprises the pattern electrodes 124a and 124b that partially cover the dielectric, unnecessary discharge is eliminated to greatly reduce power consumption when plasma is generated.
  • DBD dielectric barrier discharge
  • the pattern electrodes 124a and 124b comprise a plurality of lateral electrodes 124a formed in a lateral direction and in parallel to one another on the plate-shaped dielectric 122, and a longitudinal electrode 124b formed on the dielectric 122 to intersect the lateral electrodes 124a.
  • the longitudinal electrode 124b is connected directly to an external high voltage power supply 11, and the lateral electrodes 124a is supplied with power by a current flowing from the longitudinal electrode 124b.
  • the pattern electrode comprising the lateral electrodes and the longitudinal electrode has been used, it will be apparent that the configuration and structure of the pattern electrode may be variously modified.
  • the active electrode part 12 may include an insulting electrode shield 125 for entirely covering the pattern electrode 124a and 124b described above.
  • the electrode shield 125 prevents parasite discharges such as an arc from being generated between the pattern electrode 124a and 124b and the frame 17 upon application of a higher voltage. This also prevents increases in the temperatures of the plasma shower unit 10 itself and an apparatus or equipment on which the plasma shower unit 10 is to be mounted, thereby eliminating a need for additional installation of a cooling means.
  • the ground electrode part 16 is integrally connected to the lower wall of the frame 17 while being arranged to face the active electrode part 12, so that a space in which plasma is generated can be defined between the active electrode part 12 and the ground electrode part 16. Therefore, when a reaction gas such as N or Ar or another reaction gas is introduced into the reaction chamber 18 under the atmospheric pressure and high voltage power is supplied to the active electrode part 12, plasma is generated between the active electrode part 12 and the ground electrode part 16.
  • a reaction gas such as N or Ar or another reaction gas
  • the ground electrode part 16 is formed with a plurality of plasma holes
  • the plasma holes 162 formed in the ground electrode part 16 are arranged to correspond to the pattern electrodes 124a and 124b of the active electrode part 12, so that all the plasma holes 162 can face the pattern electrodes 124a and 124b. Since this ensures that the region where plasma is substantially generated is aligned with the plasma holes 162 through which the plasma is emitted, plasma cleaning efficiency for an object to be treated (especially, a chip-mounting substrate) can be maximized upon supply of certain power.
  • FIG. 6 schematically shows a wire bonding equipment 1 using the plasma shower unit 10 described above among semiconductor package manufacturing equipments.
  • the wire bonding equipment 1 includes a carrying means 20 for carrying a chip-mounting substrate 2, the atmospheric pressure plasma shower unit 10 for cleaning the chip-mounting substrate 2 positioned on the carrying means 20 in a shower manner, and a wire bonding unit 30 for performing a wire bonding process for the chip-mounting substrate 2 that have been subjected to the plasma cleaning and then carried by the carrying means 20.
  • a wire bonding unit 30 for performing the wire bonding process an arbitrary unit for performing another process may be provided to implement another semiconductor package manufacturing equipment.
  • the carrying means 20 described above functions to receive the chip-mounting substrate 2 from the loading apparatus 4 and to carry the chip-mounting substrate 2 to the unloading apparatus 6 via the plasma shower unit 10 and the wire bonding unit 30. Since the loading apparatus 4 and the unloading apparatus 6 have been already disclosed in Korean Patent Laid-Open Publication No. 10-2004-80580 that is incorporated herein by reference, a detailed description thereof will be omitted.
  • the carrying means 20 comprises a carrying rail 22 and carrying grippers 24.
  • the carrying rail 22 serves to guide the chip-mounting substrate 2 mounted thereon, and the carrying gripper 24 serves to carry the chip-mounting substrate 2 whenever processes are changed on the carrying rail 22.
  • the atmospheric pressure plasma shower unit (hereinafter, referred to as the "plasma shower unit") 10 serves to clean the chip-mounting substrate 2 in a shower manner by emitting plasma from above the carrying means 20 toward the chip- mounting substrate 2 positioned on the carrying means 20.
  • the plasma shower unit 10 when the chip-mounting substrate 2 is carried by the carrying means 20 and positioned just below the plasma shower unit 10, the plasma shower unit 10 generates atmospheric pressure plasma therein and emits the atmospheric pressure plasma onto the chip- mounting substrate 2 through the plasma holes 162 (see Figs. 1 to 5) formed in the ground electrode part 16, thereby cleaning the chip-mounting substrate 2.
  • the wire bonding unit 30 performs, using a capillary 32, a wire bonding process of connecting a semiconductor chip and a lead to each other with a conductive metal wire on a chip-mounting substrate 2 that has been already cleaned and has arrived in advance. Since the wire bonding unit 30 has been already disclosed in Korean Patent Laid-Open Publication No. 10-2004-0080580 incorporated herein by reference, a detailed description thereof will be omitted.
  • the chip-mounting substrate 2 that has been completely subjected to the plasma cleaning process in the preceding stage is carried toward the wire bonding unit 30 by means of driving of the carrying means 20, specifically by the movement of the carrying gripper 24.
  • another chip-mounting substrate 2 that is on standby on the loading apparatus 4 is pushed away by the carrying gripper 24 and then carried toward a position just below the plasma shower unit 10.
  • the structure of the plasma shower unit 10 for emitting plasma downwardly and the carrying means 20 passing below the plasma shower unit 10 enable the chip-mounting substrates 2 to be continuously supplied toward the wire bonding unit 30. This considerably reduces the standby time of the chip-mounting substrate 2 just before the wire bonding process, thereby greatly contributing to improvement of the reliability of the wire bonding process. Furthermore, since the plasma shower unit 10 according to the present embodiment continuously performs the cleaning of the chip-mounting substrate 2 even while the wire boding process is performed downstream, it is possible to nearly completely remove the standby time of the chip-mounting substrate 2 before the wire bonding process.
  • the wire bonding equipment 1 employ the atmospheric pressure plasma shower unit 10 having the pattern electrode and the electrode shield as in the previous embodiment.
  • the effects of reduction of standby time before wire bonding can also be obtained even with other plasma cleaning units having different structures for emitting plasma in a shower manner. That is, the use of the shower-type atmospheric pressure plasma cleaning unit in the wire bonding equipment 1 has a great effect on the wire bonding process together with the presence of the carrying means 20 that is a main component, and cannot be easily conceived in the art. Accordingly, this should be construed as falling within the scope of the present invention.
  • the wire bonding equipment 1 employ the atmospheric pressure plasma shower unit 10 having the pattern electrode and the electrode shield as in the previous embodiment.
  • the effects of reduction of standby time before wire bonding can also be obtained even with other plasma cleaning units having different structures for emitting plasma in a shower manner. That is, the use of the shower-type atmospheric pressure plasma cleaning unit in the wire bonding equipment 1 has a great effect on the wire bonding process together with the presence of the carrying means 20 that is a main component, and cannot be easily conceived in the art. Accordingly, this should be construed as falling within the scope of the present invention.
  • the atmospheric pressure plasma shower unit according to the present invention has an advantage in that plasma enough to perform a plasma cleaning process is generated only with a small amount of power consumption. Further, since the atmospheric pressure plasma shower unit according to the present invention has a compact structure and is constructed to emit plasma generated in the plasma shower unit outwardly in a shower manner, it can be advantageously used to clean a substrate in a semiconductor package manufacturing equipment such as a wire bonding equipment.
  • a metal electrode formed on a dielectric comprises a pattern electrode that is covered with an insulating electrode shield in the present invention, it is possible to prevent increases in the temperatures of the plasma shower unit and a semiconductor package manufacturing equipment including the plasma shower unit by resistance heat due to application of a higher voltage. This eliminates a need for installation of a cooling means, which is required to prevent an increase in the temperature of a conventional plasma cleaning apparatus, thereby improving economic efficiency and preventing the apparatus from being bulky.
  • the present invention since the present invention has a structure in which the plasma shower unit is mounted over the carrying means, substrates cleaned in the plasma shower unit can be immediately carried to a subsequent processing unit such as a wire bonding unit. This reduces standby time before the subsequent process. Accordingly, it is possible to secure the reliability of the subsequent semiconductor package process, especially the wire bonding process.

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Abstract

The present invention relates to an atmospheric pressure plasma shower unit. An object of the present invention is to provide an atmospheric pressure plasma shower unit that is configured to emit plasma toward an object to be treated (especially, a chip-mounting substrate) in a shower manner, is very advantageous to plasma cleaning of the object to be treated which is carried by a carrying means, and solves the problems in the prior art such as increase in temperature due to parasitic discharge. To achieve the object, the present invention provides an atmospheric pressure plasma shower unit, comprising an active electrode part formed of a pattern electrode on a dielectric and activated when a high voltage is applied to the pattern electrode; and a ground electrode part disposed to generate plasma between the active electrode part and the ground electrode part and formed with a plurality of plasma holes through which the generated plasma is emitted outwardly.

Description

Description
ATMOSPHERIC PRESSURE PLASMA SHOWER UNIT, AND EQUIPMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE USING THE SAME
Technical Field
[1] The present invention relates to the field of manufacture of a semiconductor package, and more specifically, to an atmospheric pressure plasma shower unit for use in manufacturing a semiconductor package. Particularly, the present invention relates to a technique for cleaning a substrate of a semiconductor package using an atmospheric pressure plasma shower unit before a wire bonding process is initiated, in the field of manufacture of the semiconductor package. Background Art
[2] Generally, a semiconductor package is completely manufactured through various unit processes such as die attaching, wire bonding, molding and the like. Further, a process of cleaning a semiconductor component, which has been processed in a preceding process, is added between a finish of the preceding process and a start of a subsequent process in consecutive processes. Such a cleaning process is used to remove various kinds of foreign substances that are generated when a semiconductor component is processed, thereby improving the reliability of an overall semiconductor chip package manufacturing process.
[3] Wire bonding is a process of connecting a semiconductor chip to a lead of a chip- mounting substrate by means of a conductive metal wire. It is required to clean the chip-mounting substrate processed in a preceding process so as to guarantee the reliability of the process. Currently, a vacuum plasma cleaning process has been prevailingly used as a cleaning process before the wire bonding process.
[4] A conventional vacuum plasma cleaning equipment used before a wire bonding process includes an active electrode and a ground electrode facing the active electrode within a vacuum chamber and is constructed to generate plasma in the vacuum chamber by applying a high voltage to the active electrode and by introducing a reaction gas such Ar into the vacuum chamber.
[5] However, since this vacuum plasma cleaning equipment is prepared separately from a wire bonding apparatus, there is a problem in that it is not possible to sequentially and continuously perform a cleaning process and a wire bonding process. Furthermore, if the plasma cleaning equipment described above is used, a plurality of chip-mounting substrates that have been cleaned and then taken out from the vacuum chamber should be on standby for a long time before they are subjected to the wire bonding process. Thus, foreign substances may be deposited or an oxide film may be generated on the chip-mounting substrates during the standby time. Accordingly, the reliability of the process is degraded and there is also inconvenience in that the chip-mounting substrates should be cleaned once more.
[6] In this regard, there has been proposed a technique in which an atmospheric pressure plasma cleaning apparatus is installed in a wire bonding apparatus. Such a conventional technique is disclosed in Korean Patent Laid-Open Publication No. 10-2004-0080580. The conventional wire bonding apparatus disclosed therein includes an atmospheric pressure plasma cleaning apparatus provided at a front end thereof. The atmospheric pressure plasma cleaning apparatus is constructed such that an index rail passes through between a pair of upper and lower electrode parts each of which has a laminated structure of a plate-shaped metal electrode and a plate-shaped dielectric, and that atmospheric pressure plasma cleaning is performed on a chip-mounting substrate moving along the index rail. Disclosure of Invention Technical Problem
[7] The prior art discloses that the reaction gas (N ) is supplied between the pair of electrode parts. However, since the index rail should pass through between the electrode parts, there is a technical limitation in that it is difficult to appropriately supply the reaction gas and generate plasma. Further, the plasma generated by the el ectrode structure of the prior art may generate an arc on an object to be treated (especially, a chip-mounting substrate), resulting in damage to the chip-mounting substrate.
[8] Furthermore, since the atmospheric pressure plasma cleaning apparatus disclosed in the prior art has the electrode part with a boat-type structure in which the plate-shaped metal electrode is laminated on the dielectric, there are problems in that the metal electrode structure having a larger thickness and surface area requires extension of insulation length and a quantity of parasitic discharge is also inevitably produced. Specifically, since the parasitic discharge described above increases the temperate of the apparatus, there are problems in that a cooling means should be installed and the apparatus becomes bulky accordingly.
[9] The present invention is conceived to solve the aforementioned problems in the prior art. Accordingly, an object of the present invention is to provide an atmospheric pressure plasma shower unit that is configured to emit plasma toward an object to be treated (especially, a chip-mounting substrate) in a shower manner, is very advantageous to plasma cleaning of the object to be treated which is carried by a carrying means, and solves the problems in the prior art such as increase in temperature due to parasitic discharge.
[10] Another object of the present invention is to provide an equipment and method for manufacturing a semiconductor package, wherein plasma is emitted in a shower manner toward a substrate, which is carried by a carrying means, to perform plasma cleaning for the substrate before a process such as a wire bonding process is initiated, and the process such as the wire bonding process for the substrate moved by the carrying means is then performed, thereby considerably shortening process time and simultaneously improving the reliability of the process. Technical Solution
[11] An atmospheric pressure plasma shower unit of the present invention comprises an active electrode part formed of a pattern electrode on a dielectric and activated when a high voltage is applied to the pattern electrode; and a ground electrode part disposed to generate plasma between the active electrode part and the ground electrode part and formed with a plurality of plasma holes through which the generated plasma is emitted outwardly.
[12] In the atmospheric pressure plasma shower unit may further comprise an insulating electrode shield formed to cover the pattern electrode. Further, in this embodiment of the present invention, the plasma holes formed in the ground electrode part may be arranged to correspond to a pattern of the pattern electrode.
[13] The present invention also discloses a semiconductor package manufacturing equipment. A semiconductor package manufacturing equipment according to the present invention comprises a carrying means moved to carry a substrate positioned thereon, wherein a chip has been mounted or is to be mounted on the substrate; an atmospheric pressure plasma shower unit which includes an active electrode part and a ground electrode part formed with a plurality of plasma holes and is disposed over the carrying means so that plasma generated between the active electrode part and the ground electrode part can be emitted through the plasma holes toward the substrate positioned on the carrying means to clean an upper portion of the substrate; and a processing unit for performing a subsequent semiconductor process on the substrate which has been cleaned in the atmospheric pressure plasma shower unit and then carried by the carrying means. At this time, the processing unit may be a wire bonding unit for performing a wire bonding process on the substrate with the semiconductor chip mounted thereon. In this case, the processing unit may be a unit for performing one of various processes, such as molding, heat treatment, die attaching or ball attaching, in addition to the wire bonding on the substrate.
[14] The present invention also discloses a method for manufacturing a semiconductor package. The method for manufacturing a semiconductor package comprises the steps of (a) positioning a substrate on a carrying means, and moving the carrying means to move the substrate, wherein a chip has been mounted or is to be mounted on the substrate; (b) emitting plasma in a shower manner from above the substrate toward the substrate to clean an upper portion of the substrate while the substrate is moved by the carrying means or is in a stationary state; and (c) performing a subsequent semiconductor process on the substrate carried by the carrying means after the cleaning. [15] At this time, in step (c), a wire bonding process may be performed on the substrate with the chip mounted thereon, which has been cleaned in step (b). In step (b), an atmospheric pressure plasma shower unit comprising an active electrode part and a ground electrode part formed with a plurality of plasma holes may be used to emit plasma generated between the active electrode part and the ground electrode part through the plasma holes in the shower manner.
Advantageous Effects
[16] The atmospheric pressure plasma shower unit according to the present invention has an advantage in that plasma enough to perform a plasma cleaning process is generated only with a small amount of power consumption. Further, since the atmospheric pressure plasma shower unit according to the present invention has a compact structure and is constructed to emit plasma generated in the plasma shower unit outwardly in a shower manner, it can be advantageously used to clean a substrate in a semiconductor package manufacturing equipment such as a wire bonding equipment.
[17] Moreover, since a metal electrode formed on a dielectric comprises a pattern electrode that is covered with an insulating electrode shield in the present invention, it is possible to prevent increases in the temperatures of the plasma shower unit and a semiconductor package manufacturing equipment including the plasma shower unit by resistance heat due to application of a higher voltage. This eliminates a need for installation of a cooling means, which is required to prevent an increase in the temperature of a conventional plasma cleaning apparatus, thereby improving economic efficiency and preventing the apparatus from being bulky.
[18] In addition, since the present invention has a structure in which the plasma shower unit is mounted over the carrying means, substrates cleaned in the plasma shower unit can be immediately carried to a subsequent processing unit such as a wire bonding unit. This reduces standby time before the subsequent process. Accordingly, it is possible to secure the reliability of the subsequent semiconductor package process, especially the wire bonding process. Brief Description of the Drawings
[19] Fig. 1 is a sectional perspective view of an atmospheric pressure plasma shower unit according to an embodiment of the present invention, showing the inner con- figuration of the atmospheric pressure plasma shower unit.
[20] Fig. 2 is a schematic sectional view of the atmospheric pressure plasma shower unit shown in Fig. 1.
[21] Figs. 3 to 5 are views illustrating the structures of electrode parts of the atmospheric pressure plasma shower unit according to the embodiment of the present invention, showing an active electrode part, a ground electrode part, and an superimposed state of the active and ground electrode parts, respectively.
[22] Fig. 6 schematically shows a semiconductor package manufacturing equipment according to an embodiment of the present invention.
[23] <Explanation of Reference Numerals for Main Portions in Drawings>
[24] 10: Plasma shower unit 12: Active electrode part
[25] 16: Ground electrode part 122: Dielectric
[26] 124a, 124b: Pattern electrode 162: Plasma hole
[27] 20: Carrying means 30: Wire bonding unit
Best Mode for Carrying Out the Invention
[28] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
[29] Fig. 1 is a sectional perspective view of an atmospheric pressure plasma shower unit according to an embodiment of the present invention, showing the inner configuration of the atmospheric pressure plasma shower unit; Fig. 2 is a sectional view of the atmospheric pressure plasma shower unit shown in Fig. 1; and Figs. 3 to 5 are plan views showing an active electrode part, a ground electrode part, and a state where the two electrode parts are arranged to face each other in the atmospheric pressure plasma shower unit according to the embodiment of the present invention, respectively.
[30] As shown in the figures, the plasma shower unit 10 according to the embodiment of the present invention includes an active electrode part 12 and a ground electrode part 16. Further, the active electrode part 12 and the ground electrode part 16 are positioned in a reaction chamber 18 that is compartmentally defined by a frame 17. Specifically, the ground electrode part 16 is integrally connected to a portion of a lower wall of the frame 17 while being disposed to face inner and outer sides of the reaction chamber 18.
[31] The active electrode part 12 is a part to which high voltage power is applied, and includes a dielectric 122 made of ceramic for forming atmospheric pressure plasma by means of dielectric barrier discharge (DBD). More specifically, the active electrode part 12 comprises the dielectric 122 and pattern electrodes 124a and 124b which are printed with a predetermined pattern on the dielectric 122. Since the metal electrode formed on the dielectric 122 comprises the pattern electrodes 124a and 124b that partially cover the dielectric, unnecessary discharge is eliminated to greatly reduce power consumption when plasma is generated.
[32] According to the embodiment of the present invention, the pattern electrodes 124a and 124b comprise a plurality of lateral electrodes 124a formed in a lateral direction and in parallel to one another on the plate-shaped dielectric 122, and a longitudinal electrode 124b formed on the dielectric 122 to intersect the lateral electrodes 124a. At this time, the longitudinal electrode 124b is connected directly to an external high voltage power supply 11, and the lateral electrodes 124a is supplied with power by a current flowing from the longitudinal electrode 124b. Although the pattern electrode comprising the lateral electrodes and the longitudinal electrode has been used, it will be apparent that the configuration and structure of the pattern electrode may be variously modified.
[33] Further, the active electrode part 12 may include an insulting electrode shield 125 for entirely covering the pattern electrode 124a and 124b described above. The electrode shield 125 prevents parasite discharges such as an arc from being generated between the pattern electrode 124a and 124b and the frame 17 upon application of a higher voltage. This also prevents increases in the temperatures of the plasma shower unit 10 itself and an apparatus or equipment on which the plasma shower unit 10 is to be mounted, thereby eliminating a need for additional installation of a cooling means.
[34] Meanwhile, the ground electrode part 16 is integrally connected to the lower wall of the frame 17 while being arranged to face the active electrode part 12, so that a space in which plasma is generated can be defined between the active electrode part 12 and the ground electrode part 16. Therefore, when a reaction gas such as N or Ar or another reaction gas is introduced into the reaction chamber 18 under the atmospheric pressure and high voltage power is supplied to the active electrode part 12, plasma is generated between the active electrode part 12 and the ground electrode part 16.
[35] Particularly, the ground electrode part 16 is formed with a plurality of plasma holes
162 that allow the plasma generated between the active electrode part 12 and the ground electrode part 16 to be emitted to the outside in a shower manner. As shown in Figs. 3 to 5, the plasma holes 162 formed in the ground electrode part 16 are arranged to correspond to the pattern electrodes 124a and 124b of the active electrode part 12, so that all the plasma holes 162 can face the pattern electrodes 124a and 124b. Since this ensures that the region where plasma is substantially generated is aligned with the plasma holes 162 through which the plasma is emitted, plasma cleaning efficiency for an object to be treated (especially, a chip-mounting substrate) can be maximized upon supply of certain power. Mode for the Invention
[36] Fig. 6 schematically shows a wire bonding equipment 1 using the plasma shower unit 10 described above among semiconductor package manufacturing equipments.
[37] As shown in Fig. 6, the wire bonding equipment 1 according to the present embodiment includes a carrying means 20 for carrying a chip-mounting substrate 2, the atmospheric pressure plasma shower unit 10 for cleaning the chip-mounting substrate 2 positioned on the carrying means 20 in a shower manner, and a wire bonding unit 30 for performing a wire bonding process for the chip-mounting substrate 2 that have been subjected to the plasma cleaning and then carried by the carrying means 20. Instead of the wire bonding unit 30 for performing the wire bonding process, an arbitrary unit for performing another process may be provided to implement another semiconductor package manufacturing equipment.
[38] According to the embodiment of the present invention, the wire bonding equipment
1 is disposed adjacent to a loading apparatus 4 in front of the plasma shower unit 10 and adjacent to an unloading apparatus 6 at the rear of the wire bonding unit 30. Further, the carrying means 20 described above functions to receive the chip-mounting substrate 2 from the loading apparatus 4 and to carry the chip-mounting substrate 2 to the unloading apparatus 6 via the plasma shower unit 10 and the wire bonding unit 30. Since the loading apparatus 4 and the unloading apparatus 6 have been already disclosed in Korean Patent Laid-Open Publication No. 10-2004-80580 that is incorporated herein by reference, a detailed description thereof will be omitted.
[39] In the present embodiment, the carrying means 20 comprises a carrying rail 22 and carrying grippers 24. The carrying rail 22 serves to guide the chip-mounting substrate 2 mounted thereon, and the carrying gripper 24 serves to carry the chip-mounting substrate 2 whenever processes are changed on the carrying rail 22.
[40] Meanwhile, the atmospheric pressure plasma shower unit (hereinafter, referred to as the "plasma shower unit") 10 serves to clean the chip-mounting substrate 2 in a shower manner by emitting plasma from above the carrying means 20 toward the chip- mounting substrate 2 positioned on the carrying means 20. For example, when the chip-mounting substrate 2 is carried by the carrying means 20 and positioned just below the plasma shower unit 10, the plasma shower unit 10 generates atmospheric pressure plasma therein and emits the atmospheric pressure plasma onto the chip- mounting substrate 2 through the plasma holes 162 (see Figs. 1 to 5) formed in the ground electrode part 16, thereby cleaning the chip-mounting substrate 2. While the plasma shower unit 10 performs the cleaning process for the chip-mounting substrate 2, the wire bonding unit 30 performs, using a capillary 32, a wire bonding process of connecting a semiconductor chip and a lead to each other with a conductive metal wire on a chip-mounting substrate 2 that has been already cleaned and has arrived in advance. Since the wire bonding unit 30 has been already disclosed in Korean Patent Laid-Open Publication No. 10-2004-0080580 incorporated herein by reference, a detailed description thereof will be omitted.
[41] Meanwhile, when the wire bonding process has been completed in the wire bonding unit 30, the chip-mounting substrate 2 that has been completely subjected to the plasma cleaning process in the preceding stage is carried toward the wire bonding unit 30 by means of driving of the carrying means 20, specifically by the movement of the carrying gripper 24. At the same time, another chip-mounting substrate 2 that is on standby on the loading apparatus 4 is pushed away by the carrying gripper 24 and then carried toward a position just below the plasma shower unit 10.
[42] As described above, in the wire bonding equipment 1 according to the present embodiment, the structure of the plasma shower unit 10 for emitting plasma downwardly and the carrying means 20 passing below the plasma shower unit 10 enable the chip-mounting substrates 2 to be continuously supplied toward the wire bonding unit 30. This considerably reduces the standby time of the chip-mounting substrate 2 just before the wire bonding process, thereby greatly contributing to improvement of the reliability of the wire bonding process. Furthermore, since the plasma shower unit 10 according to the present embodiment continuously performs the cleaning of the chip-mounting substrate 2 even while the wire boding process is performed downstream, it is possible to nearly completely remove the standby time of the chip-mounting substrate 2 before the wire bonding process.
[43] It is most preferred that the wire bonding equipment 1 employ the atmospheric pressure plasma shower unit 10 having the pattern electrode and the electrode shield as in the previous embodiment. However, the effects of reduction of standby time before wire bonding can also be obtained even with other plasma cleaning units having different structures for emitting plasma in a shower manner. That is, the use of the shower-type atmospheric pressure plasma cleaning unit in the wire bonding equipment 1 has a great effect on the wire bonding process together with the presence of the carrying means 20 that is a main component, and cannot be easily conceived in the art. Accordingly, this should be construed as falling within the scope of the present invention. Industrial Applicability
[44] It is most preferred that the wire bonding equipment 1 employ the atmospheric pressure plasma shower unit 10 having the pattern electrode and the electrode shield as in the previous embodiment. However, the effects of reduction of standby time before wire bonding can also be obtained even with other plasma cleaning units having different structures for emitting plasma in a shower manner. That is, the use of the shower-type atmospheric pressure plasma cleaning unit in the wire bonding equipment 1 has a great effect on the wire bonding process together with the presence of the carrying means 20 that is a main component, and cannot be easily conceived in the art. Accordingly, this should be construed as falling within the scope of the present invention.
[45] The atmospheric pressure plasma shower unit according to the present invention has an advantage in that plasma enough to perform a plasma cleaning process is generated only with a small amount of power consumption. Further, since the atmospheric pressure plasma shower unit according to the present invention has a compact structure and is constructed to emit plasma generated in the plasma shower unit outwardly in a shower manner, it can be advantageously used to clean a substrate in a semiconductor package manufacturing equipment such as a wire bonding equipment.
[46] Moreover, since a metal electrode formed on a dielectric comprises a pattern electrode that is covered with an insulating electrode shield in the present invention, it is possible to prevent increases in the temperatures of the plasma shower unit and a semiconductor package manufacturing equipment including the plasma shower unit by resistance heat due to application of a higher voltage. This eliminates a need for installation of a cooling means, which is required to prevent an increase in the temperature of a conventional plasma cleaning apparatus, thereby improving economic efficiency and preventing the apparatus from being bulky.
[47] In addition, since the present invention has a structure in which the plasma shower unit is mounted over the carrying means, substrates cleaned in the plasma shower unit can be immediately carried to a subsequent processing unit such as a wire bonding unit. This reduces standby time before the subsequent process. Accordingly, it is possible to secure the reliability of the subsequent semiconductor package process, especially the wire bonding process.
[48]

Claims

Claims
[1] An atmospheric pressure plasma shower unit, comprising: an active electrode part formed by printing a pattern electrode on a dielectric and activated when a high voltage is applied to the pattern electrode; and a ground electrode part disposed to generate plasma between the active electrode part and the ground electrode part and formed with a plurality of plasma holes through which the generated plasma is emitted outwardly
[2] The atmospheric pressure plasma shower unit as claimed in claim 1, further comprising an insulating electrode shield formed to cover the pattern electrode.
[3] The atmospheric pressure plasma shower unit as claimed in claim 1, wherein the plasma holes formed in the ground electrode part are arranged to correspond to a pattern of the pattern electrode.
[4] A semiconductor package manufacturing equipment, comprising: a carrying means moved to carry a substrate positioned thereon, wherein a chip has been mounted or is to be mounted on the substrate; an atmospheric pressure plasma shower unit including an active electrode part and a ground electrode part formed with a plurality of plasma holes, the atmospheric pressure plasma shower unit being disposed over the carrying means so that plasma generated between the active electrode part and the ground electrode part can be emitted through the plasma holes toward the substrate positioned on the carrying means to clean an upper portion of the substrate; and a processing unit for performing a subsequent semiconductor process on the substrate which has been cleaned in the atmospheric pressure plasma shower unit and then carried by the carrying means.
[5] The semiconductor package manufacturing equipment as claimed in claim 4, wherein the processing unit is a wire bonding unit for performing a wire bonding process on the substrate with the semiconductor chip mounted thereon.
[6] The semiconductor package manufacturing equipment as claimed in claim 4 or 5, wherein the active electrode part includes a dielectric and a pattern electrode formed by means of printing on the dielectric.
[7] The semiconductor package manufacturing equipment as claimed in claim 6, further comprising an insulating electrode shield formed to cover the pattern electrode.
[8] The semiconductor package manufacturing equipment as claimed in claim 6, wherein the plurality of plasma holes formed in the ground electrode part are arranged to correspond to a pattern of the pattern electrode.
[9] A method for manufacturing a semiconductor package, comprising the steps of: (a) positioning a substrate on a carrying means, and moving the carrying means to move the substrate, wherein a chip has been mounted or is to be mounted on the substrate;
(b) emitting plasma in a shower manner from above the substrate toward the substrate to clean an upper portion of the substrate while the substrate is moved by the carrying means or is in a stationary state; and
(c) performing a subsequent semiconductor process on the substrate carried by the carrying means after the cleaning.
[10] The method as claimed in claim 8, wherein, in step (c), a wire bonding process is performed on the substrate with the chip mounted thereon, which has been cleaned in step (b).
[11] The method as claimed in claim 9 or 10, wherein, in step (b), an atmospheric pressure plasma shower unit comprising an active electrode part and a ground electrode part formed with a plurality of plasma holes is used to emit plasma generated between the active electrode part and the ground electrode part through the plasma holes in the shower manner.
[12] The method as claimed in claim 10, wherein the active electrode part comprises a dielectric and a pattern electrode formed by means of printing on the dielectric.
[13] The method as claimed in claim 10, wherein the atmospheric pressure plasma shower unit further comprises an insulating shield formed to cover the pattern electrode.
PCT/KR2006/003954 2005-10-07 2006-10-02 Atmospheric pressure plasma shower unit, and equipment and method for manufacturing semiconductor package using the same WO2007043764A1 (en)

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