KR20070038800A - Atmospheric pressure plasma shower unit and wire bonding apparatus and method using the same unit - Google Patents

Atmospheric pressure plasma shower unit and wire bonding apparatus and method using the same unit Download PDF

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KR20070038800A
KR20070038800A KR20050094093A KR20050094093A KR20070038800A KR 20070038800 A KR20070038800 A KR 20070038800A KR 20050094093 A KR20050094093 A KR 20050094093A KR 20050094093 A KR20050094093 A KR 20050094093A KR 20070038800 A KR20070038800 A KR 20070038800A
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plasma
wire bonding
chip mounting
mounting substrate
atmospheric pressure
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KR20050094093A
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Korean (ko)
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KR100708212B1 (en
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유영종
백종문
이해룡
엄동진
이근호
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주식회사 피에스엠
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Priority to KR20050094093A priority Critical patent/KR100708212B1/en
Priority to PCT/KR2006/003954 priority patent/WO2007043764A1/en
Priority to JP2008534435A priority patent/JP2009511246A/en
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract

본 발명은, 대기압 플라즈마 샤워유닛 및 이를 이용하는 와이어본딩 장치에 관한 것으로서, 플라즈마를 샤워식으로 처리대상물(특히, 칩 실장 기판)에 방출하는 구조로 이루어져서, 이송수단 위에서 이동하는 처리대상물의 플라즈마 세정에 매우 유리하며, 기생방전 등에 의한 온도 상승과 같은 종래기술의 문제점을 해결한 대기압 플라즈마 샤워유닛을 제공하는 것을 그 목적으로 한다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atmospheric plasma shower unit and a wire bonding apparatus using the same. It is very advantageous to provide an atmospheric pressure plasma shower unit which solves the problems of the prior art such as temperature rise by parasitic discharge or the like.

전술한 목적을 달성하기 위해, 본 발명은, 유전체 상에 패턴전극이 형성되어 이루어지며, 상기 패턴전극에 고전압이 인가될 때 활성화되는 활성전극부와; 상기 활성전극부와의 사이에서 플라즈마를 발생시키도록 배치되며, 발생된 플라즈마를 외부로 방출하기 위한 다수의 플라즈마홀이 형성된 접지전극부를; 포함하는 대기압 플라즈마 샤워유닛을 개시한다.In order to achieve the above object, the present invention is formed by forming a pattern electrode on the dielectric, the active electrode portion is activated when a high voltage is applied to the pattern electrode; A ground electrode part disposed to generate plasma between the active electrode part and having a plurality of plasma holes for emitting the generated plasma to the outside; An atmospheric pressure plasma shower unit is disclosed.

와이어본딩, 샤워유닛, 패턴전극, 활성전극부, 유전체, 전극쉴드, 플라즈마 Wire bonding, shower unit, pattern electrode, active electrode, dielectric, electrode shield, plasma

Description

대기압 플라즈마 샤워유닛 이를 이용한 와이어본딩 장치 및 방법 {ATMOSPHERIC PRESSURE PLASMA SHOWER UNIT AND WIRE BONDING APPARATUS AND METHOD USING THE SAME UNIT}Atmospheric pressure plasma shower unit Wire bonding device and method using same {ATMOSPHERIC PRESSURE PLASMA SHOWER UNIT AND WIRE BONDING APPARATUS AND METHOD USING THE SAME UNIT}

도 1은 본 발명의 실시예에 따른 대기압 플라즈마 샤워유닛의 내부구성을 설명하기 위한 대기압 플라즈마 샤워유닛의 절개사시도.1 is an exploded perspective view of an atmospheric pressure plasma shower unit for explaining the internal configuration of the atmospheric pressure plasma shower unit according to an embodiment of the present invention.

도 2는 도 1에 도시된 대기압 플라즈마 샤워유닛의 개략적인 단면도.FIG. 2 is a schematic cross-sectional view of the atmospheric plasma shower unit shown in FIG. 1. FIG.

도 3a 내지 도 3c는 도 1 및 도2에 도시된 플라즈마 샤워유닛의 전극부 구조를 설명하기 위한 도면들로서, 각각 활성전극부, 접지전극부, 그리고, 활성전극부와 접지전극부가 중첩되어 있는 상태를 도시한 도면.3A to 3C are diagrams for describing the electrode part structure of the plasma shower unit shown in FIGS. 1 and 2, wherein the active electrode part, the ground electrode part, and the active electrode part and the ground electrode part overlap with each other. Figure.

도 4는 본 발명의 실시예에 따른 와이어본딩 장치를 개략적으로 도시한 도면. 4 schematically illustrates a wire bonding apparatus according to an embodiment of the present invention.

<도면의 주요부분에 대한 부호설명><Code Description of Main Parts of Drawing>

10: 플라즈마 샤워유닛 12: 활성전극부10: plasma shower unit 12: active electrode portion

16: 접지전극부 122: 유전체16: ground electrode 122: dielectric

124a, 124b: 패턴전극 162: 플라즈마홀124a and 124b: pattern electrode 162: plasma hole

20: 이송수단 30: 와이어본딩 유닛20: transfer means 30: wire bonding unit

본 발명은, 대기압 플라즈마 샤워유닛과 그 대기압 플라즈마 샤워유닛을 반도체 칩 패키지 제조분야에 이용하는 장치 및 방법에 관한 것으로서, 특히, 반도체 칩 패키지 제조분야 중에서도 와이어본딩 공정에서 대기압 플라즈마 샤워유닛을 이용하여 칩 실장 기판을 세정하는 와이어본딩 장치 및 방법에 관한 것이다.The present invention relates to an apparatus and a method for using the atmospheric plasma shower unit and the atmospheric plasma shower unit in the semiconductor chip package manufacturing field, and in particular, in the semiconductor chip package manufacturing field, the chip mounting using the atmospheric plasma shower unit in the wire bonding process. A wire bonding apparatus and method for cleaning a substrate.

일반적으로, 반도체 칩 패키지는 다이 어태치(die attach), 와이어본딩(wire bonding), 몰딩(molding) 등의 여러 단위 공정을 거쳐 제작이 완료된다. 그리고, 연속되는 공정의 완료와 시작 사이에는 앞선 공정에서 가공된 반도체 부품을 세정하는 공정이 추가된다. 이러한 세정 공정은 반도체 부품을 가공하는 중에 생긴 각종 이물질을 제거하여 전체적인 반도체 칩 패키지 제작공정의 신뢰성을 향상시켜 준다.In general, a semiconductor chip package is manufactured through various unit processes such as die attach, wire bonding, and molding. In addition, between the completion and start of the subsequent process, a process of cleaning the semiconductor component processed in the previous process is added. This cleaning process removes various foreign matters generated during processing of semiconductor components, thereby improving the reliability of the overall semiconductor chip package manufacturing process.

와이어본딩은, 칩 실장 기판의 리드와 반도체 칩을 도전성의 금속선으로 연결하는 공정으로서, 공정의 신뢰성 확보를 위해, 그 전 공정에서 가공된 칩 실장 기판을 세정하는 공정이 요구된다. 현재, 와이어본딩 전의 세정 공정에는 진공 플라즈마 세정이 가장 널리 사용되고 있다. Wire bonding is a process of connecting the lead of a chip mounting board and a semiconductor chip with a conductive metal wire, and the process of washing the chip mounting board processed in the previous process is calculated | required in order to ensure process reliability. Currently, vacuum plasma cleaning is the most widely used cleaning process before wire bonding.

와이어본딩 공정에 이용되는 기존의 진공 플라즈마 세정장비는, 진공챔버 내에 활성전극과 이와 마주하는 접지전극을 구비하여, 활성전극에 고전압이 인가되고 아르곤 등의 반응가스가 진공챔버 내에 투입됨으로써 진공챔버 내에 플라즈마를 생성시키도록 구성되어 있다.Existing vacuum plasma cleaning equipment used in the wire bonding process has an active electrode and a ground electrode facing the same in the vacuum chamber, and a high voltage is applied to the active electrode and a reaction gas such as argon is introduced into the vacuum chamber to allow the inside of the vacuum chamber. And generate a plasma.

이러한 플라즈마 세정설비는 와이어본딩 장치와 별도로 마련되어야 하므로 세정과 와이어본딩으로 이어지는 연속적인 공정이 불가능하다는 문제점을 안고 있다. 게다가, 위와 같은 플라즈마 세정설비를 이용하는 경우, 세정된 후 진공챔버로부터 반출된 다량의 칩 실장 기판이 와이어본딩 공정을 수행하기 위해 장시간 대기되므로, 그 대기시간 동안에 칩 실장 기판에 이물질의 침착과 산화막 등이 생성되어 공정의 신뢰성을 떨어뜨리고 더 나아가서는 칩 실장 기판을 재차 세정해야 하는 번거로움까지 야기한다.Since the plasma cleaning equipment has to be provided separately from the wire bonding apparatus, there is a problem in that a continuous process leading to cleaning and wire bonding is impossible. In addition, in the case of using the plasma cleaning equipment as described above, since a large amount of the chip mounting substrate removed from the vacuum chamber after being cleaned is waited for a long time to perform the wire bonding process, deposition of foreign matter on the chip mounting substrate and oxide film, etc. during the waiting time. This creates a less reliable process and furthermore the hassle of having to clean the chip mounting substrate again.

이에 대하여, 종래에는 대기압 플라즈마 세정기를 와이어본딩 장치에 설치한 기술이 제안된 바 있으며, 이러한 종래의 기술은 국내 공개특허 2004-0080580호에 개시되어 있다. 개시된 종래의 와이어본딩 장치는 자체 전단부에 대기압 플라즈마 세정기를 구비한다. 이 대기압 플라즈마 세정기는 판상의 금속전극과 판상의 유전체가 적층구조로 이루어진 상하 한 쌍의 전극부 사이로 인덱스 레일이 통과되게 하고 그 인덱스 레일 위에서 이동되는 칩 실장 기판에 대하여 대기압 플라즈마 세정을 수행하도록 구성된다. On the other hand, in the related art, a technique in which an atmospheric pressure plasma scrubber is installed in a wire bonding apparatus has been proposed, and this conventional technique is disclosed in Korean Patent Laid-Open Publication No. 2004-0080580. The disclosed conventional wirebonding apparatus has an atmospheric plasma cleaner at its front end. The atmospheric plasma scrubber is configured to allow an index rail to pass between a pair of upper and lower electrode portions in which a plate-shaped metal electrode and a plate-like dielectric are stacked, and perform atmospheric pressure plasma cleaning on a chip mounted substrate moved on the index rail. .

그러나, 종래의 기술은 한 쌍의 전극부 사이로 반응가스(N2)를 공급한다고 개시하고 있으나, 전극부 사이로 인덱스 레일을 통과시켜야 한다는 점에서 반응가스의 공급 및 플라즈마 발생이 제대로 이루지기 어렵다는 기술적인 한계를 갖고 있다. 또한, 종래기술의 전극 구조에 의해 발생되는 플라즈마는 처리대상물(특히, 칩 실장 기판)에 아크를 발생시켜 실장 기판을 손상시킬 수 있다.However, the prior art discloses supplying the reaction gas (N 2 ) between a pair of electrode portions. However, since the index rail must be passed between the electrode portions, the supply of the reaction gas and plasma generation are difficult. There is a limit. In addition, the plasma generated by the electrode structure of the prior art can generate an arc on the object to be treated (particularly, the chip mounting substrate) to damage the mounting substrate.

게다가, 종래 기술에 개시된 대기압 플라즈마 세정기는 전극부의 구조가 유전체 위에 판형의 금속전극이 적층되어 있는 보트(boat)형의 구조이므로 두께 및 표면적이 큰 금속전극 구조로 인해 절연길이의 확장이 요구되고 또한 다량의 기생방전이 일어날 수밖에 없는 문제점을 안고 있다. 특히, 위와 같은 기생방전은 장치의 온도를 상승시켜 냉각수단 설치 및 이에 따른 장치의 비대화와 같은 문제점을 야기한다.In addition, the atmospheric pressure plasma scrubber disclosed in the prior art has a boat-type structure in which a plate-shaped metal electrode is stacked on a dielectric, so that the insulation length is extended due to the metal electrode structure having a large thickness and surface area. There is a problem that a lot of parasitic discharge must occur. In particular, such a parasitic discharge raises the temperature of the device, causing problems such as installation of cooling means and consequent enlargement of the device.

본 발명은, 종래기술의 문제점을 해결하기 위한 것으로서, 플라즈마를 샤워식으로 처리대상물(특히, 칩 실장 기판에)에 방출하는 구조로 이루어져서, 이송수단 위에서 이동하는 처리대상물의 플라즈마 세정에 매우 유리하며, 기생방전 등에 의한 온도 상승 등의 기존 기술의 문제점을 제거한 대기압 플라즈마 샤워유닛을 제공하는 것을 그 목적으로 한다. The present invention is to solve the problems of the prior art, and has a structure in which the plasma is discharged to the object to be processed (particularly to the chip mounting substrate) in the shower, it is very advantageous for plasma cleaning of the object to be moved on the transfer means It is an object of the present invention to provide an atmospheric pressure plasma shower unit that eliminates the problems of the existing technology such as temperature rise due to parasitic discharge.

또한, 본 발명의 다른 목적은, 칩 실장 기판을 이용한 와이어본딩 공정에서, 이송수단을 타고 이동하는 칩 실장 기판에 대해여 플라즈마를 샤워식으로 방출하여 그 칩 실장 기판에 대한 플라즈마 세정을 수행하고 그 후 이송수단을 타고 이동하는 칩 실장 기판에 대하여 와이어본딩 공정을 수행하여 와이어본딩 공정 시간을 크게 단축시킴과 동시에 공정의 신뢰성을 향상시킬 수 있는 와이어본딩 장치 및 방법을 제공하는 것이다.In addition, another object of the present invention, in the wire bonding process using a chip mounting substrate, to discharge the plasma in the shower to the chip mounting substrate moving by the transfer means to perform a plasma cleaning for the chip mounting substrate The present invention provides a wire bonding apparatus and method that can shorten the wire bonding process time and improve the reliability of a process by performing a wire bonding process on a chip mounting substrate moving through a transfer means.

전술한 목적을 달성하기 위해, 본 발명에 따른 대기압 플라즈마 샤워유닛은, 유전체 상에 패턴전극이 형성되어 이루어지며 상기 패턴전극에 고전압이 인가될 때 활성화되는 활성전극부와, 상기 활성전극부와의 사이에서 플라즈마를 발생시키도록 배치되며, 발생된 플라즈마를 방출하기 위한 다수의 플라즈마홀이 형성된 접지전극부를 포함한다.In order to achieve the above object, the atmospheric pressure plasma shower unit according to the present invention, the pattern electrode is formed on a dielectric and is activated when a high voltage is applied to the pattern electrode and the active electrode portion and It is arranged to generate a plasma therebetween, and includes a ground electrode portion formed with a plurality of plasma holes for emitting the generated plasma.

본 발명의 실시예에 따른 대기압 플라즈마 샤워유닛은, 상기 패턴전극을 덮도록 형성된 절연성의 전극쉴드를 더 포함하는 것이 바람직하다. 또한, 본 발명의 실시예에 따라, 상기 접지전극부에 형성된 다수의 플라즈마홀은 상기 패턴전극의 패턴에 상응하는 배열로써 형성되는 것이 바람직하다.Atmospheric pressure plasma shower unit according to an embodiment of the present invention, preferably further comprises an insulating electrode shield formed to cover the pattern electrode. In addition, according to an embodiment of the present invention, the plurality of plasma holes formed in the ground electrode part is preferably formed in an array corresponding to the pattern of the pattern electrode.

또한, 본 발명은 와이어본딩 장치를 개시한다. 본 발명에 따른 와이어본딩 장치는, 칩 실장 기판을 이동시키기 위한 이송수단과; 상기 이송수단 위쪽에 설치되며, 활성전극부와 접지전극부 사이에서 발생한 플라즈마를 접지전극부에 형성된 다수의 플라즈마홀을 통해 상기 이송수단 위의 칩 실장 기판에 방출시켜 그 칩 실장 기판을 세정하는 대기압 플라즈마 샤워유닛과; 상기 대기압 플라즈마 샤워유닛에 의해 세정된 후 상기 이송수단을 타고 이동한 상기 칩 실장 기판에 대해 와이어 본딩 공정을 수행하는 와이어본딩 유닛을 포함한다. The present invention also discloses a wire bonding apparatus. A wire bonding apparatus according to the present invention includes: a transfer means for moving a chip mounting substrate; Atmospheric pressure is installed above the transfer means, the plasma generated between the active electrode portion and the ground electrode portion is discharged to the chip mounting substrate on the transfer means through a plurality of plasma holes formed in the ground electrode portion to clean the chip mounting substrate A plasma shower unit; And a wire bonding unit performing a wire bonding process on the chip mounted substrate moved by the transfer means after being cleaned by the atmospheric pressure plasma shower unit.

또한, 본 발명은 와이어본딩 방법을 개시하며, 본 발명에 따른 와이어본딩 방법은, 칩 실장 기판을 이송수단 위에 올려놓고 그 이송수단을 구동시켜 칩 실장 기판을 이동시키는 공정과; 칩 실장 기판이 이송수단을 타고 이동 또는 정지해 있는 중에, 칩 실장 기판 위쪽에서 상기 칩 실장 기판을 향해 플라즈마를 샤워식으로 방출하여 상기 칩 실장 기판을 세정하는 공정과; 칩 실장 기판이 세정된 후 상기 이송수단을 타고 이송된 칩 실장 기판에 대해 와이어본딩을 행하는 공정을; 포함한다.In addition, the present invention discloses a wire bonding method, the wire bonding method according to the present invention comprises the steps of placing the chip mounting substrate on the transfer means and driving the transfer means to move the chip mounting substrate; Washing the chip mounting substrate by shower-releasing plasma from above the chip mounting substrate toward the chip mounting substrate while the chip mounting substrate is moved or stopped by a transfer means; Performing wire bonding on the chip mounted substrate transferred by the transfer means after the chip mounted substrate is cleaned; Include.

<실시예><Example>

이하 첨부된 도면을 참조로 하여 본 발명의 바람직한 실시예를 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

도 1은 본 발명의 실시예에 따른 대기압 플라즈마 샤워유닛의 내부구성을 보이기 위해 도시된 절개사시도이고, 도 2는 도 1에 도시된 대기압 플라즈마 샤워유닛의 단면도이며, 도 3a 내지 도 3b는 본 실시예에 따른 대기압 플라즈마 샤워유닛의 활성전극부, 접지전극부, 그리고, 두 전극부가 서로 마주하게 배치된 상태를 도시한 평면도이다.1 is a cutaway perspective view showing an internal configuration of an atmospheric pressure plasma shower unit according to an embodiment of the present invention, Figure 2 is a cross-sectional view of the atmospheric pressure plasma shower unit shown in Figure 1, Figures 3a to 3b 4 is a plan view illustrating a state in which an active electrode part, a ground electrode part, and two electrode parts of the atmospheric pressure plasma shower unit are disposed to face each other.

도시된 바와 같이, 본 실시예에 따른 플라즈마 샤워유닛(10)은 활성전극부(12)와 접지전극부(16)를 포함한다. 그리고, 활성전극부(12)와 접지전극부(16)는 프레임(17)에 의해 구획형성되는 반응챔버(18) 내에 위치한다. 특히, 접지전극부(16)는 프레임(17)의 하부벽 일부와 일체로 연결된 채 반응챔버(18)의 내외측과 면해 있도록 배치된다.As shown, the plasma shower unit 10 according to the present embodiment includes an active electrode unit 12 and a ground electrode unit 16. The active electrode portion 12 and the ground electrode portion 16 are located in the reaction chamber 18 defined by the frame 17. In particular, the ground electrode 16 is disposed to face the inside and outside of the reaction chamber 18 while being integrally connected to a part of the lower wall of the frame 17.

활성전극부(12)는, 고전압의 전원이 인가되는 부분으로서, 유전체 장벽 방전(DBD 방전)을 통한 대기압 플라즈마 형성을 위해 세라믹 소재의 유전체(122)를 포함한다. 보다 구체적으로는, 활성전극부(12)가 유전체(122)와 그 유전체(122) 상에 소정의 패턴으로 프린팅된 패턴전극(124a, 124b)으로 이루어진다. 이와 같이, 유전 체(122) 상에 형성되는 금속 전극이 유전체의 일부를 덮는 패턴전극(124a, 124b)으로 이루어짐으로써 불필요한 방전을 줄여 플라즈마 형성시의 전력소모를 크게 줄일 수 있다.The active electrode part 12 is a portion to which a high voltage power is applied and includes a dielectric material 122 of ceramic material for forming an atmospheric pressure plasma through a dielectric barrier discharge (DBD discharge). More specifically, the active electrode portion 12 is composed of the dielectric 122 and the pattern electrodes 124a and 124b printed on the dielectric 122 in a predetermined pattern. As described above, since the metal electrode formed on the dielectric body 122 is formed of the pattern electrodes 124a and 124b covering a part of the dielectric, unnecessary discharge can be reduced to greatly reduce power consumption during plasma formation.

본 발명의 실시예에 따라, 패턴전극(124a, 124b)은 판상의 유전체(122) 상에서 횡으로 나란하게 형성되는 복수의 횡전극(124a)들과 그 횡전극(124a)들을 가로지도록 유전체(122) 상에 형성된 하나의 종전극으로(124b)로 이루어진다. 이때, 종전극(124b)은 외부의 고전압 전원(11)에 직접 연결되며, 복수의 횡전극(124a)들은 종전극(124b)으로부터 흐른 전류에 의해 전원을 인가받게 된다. 본 실시예에서는, 횡전극과 종전극으로 이루어진 패턴전극이 사용되지만, 패턴전극의 형태 및 구조가 다양하게 변경될 수 있음은 물론이다.According to the exemplary embodiment of the present invention, the pattern electrodes 124a and 124b cross the plurality of transverse electrodes 124a and the transverse electrodes 124a formed laterally side by side on the plate-like dielectric 122. It consists of one vertical electrode (124b) formed on the (). In this case, the vertical electrode 124b is directly connected to an external high voltage power source 11, and the plurality of horizontal electrodes 124a are supplied with power by a current flowing from the vertical electrode 124b. In this embodiment, although a pattern electrode consisting of a horizontal electrode and a vertical electrode is used, the shape and structure of the pattern electrode can be variously changed.

또한, 활성전극부(12)는 전술한 패턴전극(124a, 124b)을 전체적으로 덮는 절연성의 전극쉴드(125)를 포함할 수 있다. 이 전극쉴드(125)는 고전압 인가시에 패턴전극(124a, 124b)과 프레임(17) 사이에 아크와 같은 기생방전이 발생하는 것을 막아준다. 이는 플라즈마 샤워유닛(10) 및 그 플라즈마 샤워유닛(10)이 설치되는 장치의 온도 상승을 막아주어 냉각수단이 별도로 설치되지 않도록 해준다.In addition, the active electrode unit 12 may include an insulating electrode shield 125 that entirely covers the pattern electrodes 124a and 124b described above. The electrode shield 125 prevents parasitic discharge such as an arc from occurring between the pattern electrodes 124a and 124b and the frame 17 when a high voltage is applied. This prevents the temperature rise of the plasma shower unit 10 and the apparatus in which the plasma shower unit 10 is installed so that the cooling means is not separately installed.

한편, 접지전극부(16)는 프레임(17) 하부벽과 일체로 연결된 채 활성전극부(12)와 마주하게 배치되며, 이에 따라, 활성전극부(12)와 접지전극부(16) 사이에는 플라즈마가 발생하는 공간이 형성된다. 따라서, 대기압의 반응챔버(18) 내에 예컨대, N2, 아르곤 또는 기타 다른 반응가스가 유입되고 활성전극부(12)에 고전압의 전 원이 인가되면, 활성전극부(12)와 접지전극부(16) 사이에는 플라즈마가 발생된다. Meanwhile, the ground electrode part 16 is disposed to face the active electrode part 12 while being integrally connected to the lower wall of the frame 17. Accordingly, the ground electrode part 16 is disposed between the active electrode part 12 and the ground electrode part 16. The space in which the plasma is generated is formed. Therefore, when N 2 , argon or other reaction gas is introduced into the reaction chamber 18 at atmospheric pressure and high voltage power is applied to the active electrode unit 12, the active electrode unit 12 and the ground electrode unit ( Between 16) a plasma is generated.

특히, 접지전극부(16)에는 다수의 플라즈마홀(162)이 형성되는데, 이 플라즈마홀(162)들은 활성전극부(12)와 접지전극부(16) 사이에서 발생한 플라즈마가 샤워식으로 외부에 방출되는 것을 허용한다. 도 3a 내지 도 3c에 가장 잘 도시된 바와 같이, 접지전극부(16)에 형성된 다수의 플라즈마홀(162)은 활성전극부(12)의 패턴전극(124a, 124b)에 상응하는 배열로 형성되어, 그 플라즈마홀(162)들 모두가 패턴전극(124a, 124b)과 마주하게 된다. 이는 플라즈마가 실질적으로 발생하는 영역과 플라즈마가 방출되는 플라즈마홀(162)들을 일치시키므로, 정해진 공급 전력 하에서 처리대상물(특히, 칩 실장 기판)에 대한 플라즈마 세정효율을 극대화시켜줄 수 있다.In particular, a plurality of plasma holes 162 are formed in the ground electrode part 16, and the plasma holes 162 are formed by showering the plasma generated between the active electrode part 12 and the ground electrode part 16. Allow to be released. As best shown in FIGS. 3A to 3C, the plurality of plasma holes 162 formed in the ground electrode part 16 are formed in an arrangement corresponding to the pattern electrodes 124a and 124b of the active electrode part 12. All of the plasma holes 162 face the pattern electrodes 124a and 124b. This matches the region where the plasma is substantially generated and the plasma holes 162 where the plasma is emitted, thereby maximizing the plasma cleaning efficiency for the object to be processed (particularly, the chip mounting substrate) under a predetermined power supply.

도 4는 전술한 플라즈마 유닛(10)을 이용하는 와이어본딩 장치 및 방법을 설명하기 위한 와이어본딩 장치(1)의 개략적인 구성도이다.4 is a schematic configuration diagram of the wire bonding apparatus 1 for explaining the wire bonding apparatus and method using the plasma unit 10 described above.

도 4에 도시된 바와 같이, 본 실시예에 따른 와이어본딩 장치(1)는, 칩 실장 기판(2)을 이동시키는 이송수단(20)과, 그 이송수단(20) 위에 놓인 칩 실장 기판(2)을 샤워식으로 세정하는 대기압 플라즈마 샤워유닛(10)과, 플라즈마 세정된 후 이송수단(20)을 타고 이동한 칩 실장 기판(2)에 대해 와이어본딩 공정을 수행하는 와이어본딩 유닛(30)으로 구성된다.As shown in FIG. 4, the wire bonding apparatus 1 according to the present embodiment includes a transfer means 20 for moving the chip mounting substrate 2, and a chip mount substrate 2 placed on the transfer means 20. ) As a wire bonding unit 30 performing a wire bonding process on the atmospheric pressure plasma shower unit 10 for shower type cleaning and the chip mounting substrate 2 moved on the transfer means 20 after the plasma cleaning. It is composed.

본 발명의 실시예에 따라, 와이어본딩 장치(1)는 플라즈마 샤워유닛(10)의 앞쪽으로는 로딩장치(4)와 인접해 있고 와이어본딩 유닛(30)의 뒤쪽으로는 언로딩장치(6)와 인접해 있다. 그리고, 전술한 이송수단(20)은 칩 실장 기판(2)을 로딩장 치(4)로부터 받아 이를 플라즈마 샤워유닛(10) 및 와이어본딩 유닛(30)을 거쳐 언로딩장치(6)로 이송하는 기능을 수행한다. 위와 같은 로딩장치(4) 및 언로딩장치(6)는 본 명세서의 참조로써 병합된 국내 공개특허 2004-0080580호에 이미 개시되어 있으므로 그 구체적인 설명을 생략하기로 한다.According to an embodiment of the invention, the wire bonding device 1 is adjacent to the loading device 4 in front of the plasma shower unit 10 and the unloading device 6 in the back of the wire bonding unit 30. Adjacent to. The transfer means 20 receives the chip mounting substrate 2 from the loading device 4 and transfers the chip mounting substrate 2 to the unloading device 6 via the plasma shower unit 10 and the wire bonding unit 30. Perform the function. The loading device 4 and the unloading device 6 as described above are already disclosed in Korean Patent Laid-Open Publication No. 2004-0080580, which is incorporated by reference herein, so that detailed description thereof will be omitted.

본 실시예에 따라, 이송수단(20)은 이송레일(22)과 이송그리퍼(24)로 구성된다. 이송레일(22)은 탑재된 칩 실장 기판(2)을 안내하는 기능을 하며 이송그리퍼(24)는 이송레일(22) 상에서 공정이 바뀔 때마다 칩 실장 기판(2)을 이송시키는 기능을 수행한다.According to this embodiment, the conveying means 20 is composed of a conveying rail 22 and a conveying gripper 24. The transfer rail 22 serves to guide the mounted chip mounting substrate 2, and the transfer gripper 24 performs a function of transferring the chip mounting substrate 2 whenever the process is changed on the transfer rail 22. .

한편, 대기압 플라즈마 샤워유닛(10; 이하, '플라즈마 샤워유닛'이라 함) 은 이송수단(20) 위쪽에서 그 이송수단(20) 위에 놓인 칩 실장 기판(2)에 대해 플라즈마를 방출시켜 그 칩 실장 기판(2)을 샤워식으로 세정시키는 역할을 한다. 예컨대, 이송수단(20)에 의해 이송되어 플라즈마 샤워유닛(10) 바로 아래쪽에 칩 실장 기판(2)이 위치하면, 플라즈마 샤워유닛(10)은 대기압 플라즈마를 내부에서 발생시킨 후 그 대기압 플라즈마를 접지전극부(16)에 형성된 플라즈마홀(162; 도 1 내지 도3 참조)들을 통해 칩 실장 기판(2)에 방출하여 그 칩 실장 기판(2)에 대한 세정을 수행한다. 플라즈마 샤워유닛(10)이 칩 실장 기판(2)에 대해 세정공정을 수행하는 동안, 와이어본딩 유닛(30)은 캐필러리(32)를 이용하여 먼저 세정되어 미리 도착해 있는 칩 실장 기판(2)에 대해 반도체 칩과 리드를 도전성 금속선으로 연결시키는 와이어본딩을 수행한다. 이 때, 와이어본딩 유닛(30)은 본 명세서의 참조로써 병합된 국내 공개특허 2004-0080580호 등에 이미 개시되어 있으므로 그 구체적인 설명 을 생략하기로 한다.Meanwhile, the atmospheric pressure plasma shower unit 10 (hereinafter referred to as a "plasma shower unit") emits a plasma to the chip mounting substrate 2 placed on the transfer means 20 above the transfer means 20, thereby chip mounting. It serves to clean the substrate 2 by shower. For example, when the chip mounting substrate 2 is positioned under the plasma shower unit 10 by being transferred by the transfer means 20, the plasma shower unit 10 generates an atmospheric plasma therein and then grounds the atmospheric plasma. The chip mounting substrate 2 is discharged to the chip mounting substrate 2 through the plasma holes 162 (see FIGS. 1 to 3) formed in the electrode unit 16, and the chip mounting substrate 2 is cleaned. While the plasma shower unit 10 performs the cleaning process on the chip mounting substrate 2, the wire bonding unit 30 is first cleaned using the capillary 32 and arrived in advance. Wire bonding is performed to connect the semiconductor chip and the lead with a conductive metal wire. At this time, since the wire bonding unit 30 is already disclosed in Korean Patent Publication No. 2004-0080580, which is incorporated by reference herein, the detailed description thereof will be omitted.

한편, 와이어본딩 유닛(30)에서의 와이어본딩 공정이 완료되면, 그 앞쪽에서 플라즈마 세정을 마친 칩 실장 기판(2)이 이송수단(20)의 구동, 특히, 이송그리퍼(24) 이동에 의해 와이어본딩 유닛(30)을 향해 이송된다. 이와 동시에, 로딩장치(4)에서 대기중이던 칩 실장 기판(2)이 이송 그리퍼(24)에 의해 밀려 플라즈마 샤워유닛(10) 바로 아래쪽으로 이송된다.On the other hand, when the wire bonding process in the wire bonding unit 30 is completed, the chip mounting substrate 2 which has been plasma-cleaned in front of the wire bonding unit 30 is driven by the transfer means 20, in particular, by the transfer gripper 24. It is conveyed toward the bonding unit 30. At the same time, the chip mounting substrate 2 that is waiting in the loading device 4 is pushed by the transfer gripper 24 and immediately transferred below the plasma shower unit 10.

위와 같이, 본 실시예에 따른 와이어본딩 장치(1)는, 플라즈마를 아래쪽으로 방출하는 플라즈마 샤워유닛(10)의 구조 및 그 플라즈마 샤워유닛(10) 아래쪽으로 통과하는 이송수단(20)에 의해, 칩 실장 기판(2)을 와이어본딩 유닛(30)을 향해 연속적으로 공급하는 것이 가능하다. 이는 와이어본딩 공정 직전에 칩 실장 기판(2)의 대기시간을 크게 줄여주어 와이어본딩 공정의 신뢰성 향상에 크게 기여한다. 더욱이, 본 실시예에 따른 플라즈마 샤워유닛(10)은, 앞쪽에서 와이어본딩 공정이 이루어지는 동안 칩 실장 기판(2)에 대한 세정을 계속할 수 있으므로 칩 실장 기판(2)의 와이어본딩 전 대기시간을 거의 완전하게 없애주는 것도 가능하다.As described above, the wire bonding apparatus 1 according to the present embodiment, by the structure of the plasma shower unit 10 for emitting a plasma downward and the transport means 20 passing below the plasma shower unit 10, It is possible to continuously supply the chip mounting substrate 2 toward the wire bonding unit 30. This greatly reduces the waiting time of the chip mounting substrate 2 immediately before the wire bonding process, and contributes greatly to the improvement of the reliability of the wire bonding process. Furthermore, the plasma shower unit 10 according to the present embodiment can continue cleaning the chip mounting substrate 2 while the wire bonding process is performed from the front side, so that the waiting time before the wire bonding of the chip mounting substrate 2 is substantially reduced. It can be completely eliminated.

위와 같은 와이어본딩 장치(1)는 앞서 언급된 실시예와 같이 패턴전극 및 전극쉴드를 갖는 대기압 플라즈마 샤워유닛(10)이 사용되는 것이 가장 바람직하다. 그러나, 플라즈마를 샤워식으로 방출하는 공지된 구조의 대기압 플라즈마 세정유닛으로도 와이어본딩의 대기시간을 줄여주는 효과가 구현된다. 즉, 와이어본딩 장치(1)에 기존의 샤워식 대기압 플라즈마 세정유닛을 이용하는 것은 주요 구성요소인 이동수단(20)의 존재와 함께 와이어본딩 공정에서 큰 효과를 제공하는 것으로서, 당해 기술분야에서 그 예측이 어려웠던 것이며, 이 또한 본 발명의 범위 내에 있는 것으로 해석되어져야 할 것이다.The wire bonding apparatus 1 as described above is most preferably used as the atmospheric pressure plasma shower unit 10 having a pattern electrode and an electrode shield as in the aforementioned embodiment. However, an atmospheric pressure plasma cleaning unit having a well-known structure that emits plasma in a shower type also reduces the waiting time of wire bonding. That is, the use of the conventional shower-type atmospheric plasma cleaning unit for the wire bonding apparatus 1 provides a great effect in the wire bonding process with the presence of the moving means 20 which is a main component, and the prediction in the art This was difficult and should also be construed as being within the scope of the present invention.

본 발명에 따른 대기압 플라즈마 샤워유닛은 적은 전력소모량으로도 플라즈마 세정에 필요한 충분한 플라즈마를 생성시키는 효과가 있다. 또한, 본 발명은 콤팩트한 구조를 가지며 내부에서 발생한 플라즈마를 외부에 샤워식으로 방출시키는 구조를 이루므로 와이어본딩 장치에서 칩 실장 기판을 세정하는데 매우 유용하게 이용될 수 있다.Atmospheric pressure plasma shower unit according to the present invention has the effect of generating a sufficient plasma required for plasma cleaning with a small amount of power consumption. In addition, since the present invention has a compact structure and forms a structure in which the plasma generated therein is showered to the outside, the present invention can be very useful for cleaning the chip mounting substrate in the wire bonding apparatus.

또한, 본 발명은, 유전체 상에 형성된 금속전극이 패턴전극으로 이루어지고 그 패턴전극이 절연성의 전극쉴드에 의해 덮여 있으므로, 플라즈마 샤워유닛 및 이를 포함하는 와이어본딩 장치가 고전압 인가에 의한 저항열에 의해 온도가 상승되는 것을 막아준다. 이는 종래 플라즈마 세정장치에서 온도 상승을 막기 위해 요구되던 냉각수단을 설치할 필요성을 제거하여 경제성이 뛰어나며 장치의 비대화를 막아줄 수 있다.In addition, in the present invention, since the metal electrode formed on the dielectric is made of a pattern electrode and the pattern electrode is covered by an insulating electrode shield, the plasma shower unit and the wire bonding apparatus including the same are heated by resistance heat by applying high voltage. To prevent it from rising. This eliminates the need to install the cooling means required to prevent the temperature rise in the conventional plasma cleaning apparatus is excellent in economy and can prevent the enlargement of the device.

또한, 본 발명은, 이동수단 위쪽에 플라즈마 샤워유닛이 설치된 구조를 이루므로, 플라즈마 샤워유닛에서 세정된 칩 실장 기판들이 와이어본딩 유닛으로 즉시 이송될 수 있다. 이는 와이어본딩 공정 전의 대기시간을 줄여주고, 이를 통해, 와이어본딩 공정의 신뢰성 확보가 가능하다. In addition, according to the present invention, since the plasma shower unit is installed above the moving means, the chip mounting substrates cleaned in the plasma shower unit may be immediately transferred to the wire bonding unit. This reduces the waiting time before the wire bonding process, thereby ensuring the reliability of the wire bonding process.

Claims (8)

유전체 상에 패턴전극이 형성되어 이루어지며, 상기 패턴전극에 고전압이 인가될 때 활성화되는 활성전극부와;An active electrode part formed by forming a pattern electrode on the dielectric and activated when a high voltage is applied to the pattern electrode; 상기 활성전극부와의 사이에서 플라즈마를 발생시키도록 배치되며, 발생된 플라즈마를 외부로 방출하기 위한 다수의 플라즈마홀이 형성된 접지전극부를;A ground electrode part disposed to generate a plasma between the active electrode part and having a plurality of plasma holes for emitting the generated plasma to the outside; 포함하는 대기압 플라즈마 샤워유닛.Atmospheric pressure plasma shower unit comprising. 청구항 1에 있어서, 상기 패턴전극을 덮도록 형성된 절연성의 전극쉴드를 더 포함하는 것을 특징으로 하는 대기압 플라즈마 샤워유닛.The atmospheric pressure plasma shower unit of claim 1, further comprising an insulating electrode shield formed to cover the pattern electrode. 청구항 1에 있어서, 상기 접지전극부에 형성된 다수의 플라즈마홀은 상기 패턴전극의 패턴에 상응하는 배열로써 형성됨을 특징으로 하는 대기압 플라즈마 샤워유닛.The atmospheric pressure plasma shower unit of claim 1, wherein the plurality of plasma holes formed in the ground electrode part are formed in an arrangement corresponding to the pattern of the pattern electrode. 칩 실장 기판을 이동시키기 위한 이송수단과;Transfer means for moving the chip mounting substrate; 상기 이송수단 위쪽에 설치되며, 활성전극부와 접지전극부 사이에서 발생한 플라즈마를 접지전극부에 형성된 다수의 플라즈마홀을 통해 상기 이송수단 위의 칩 실장 기판에 방출시켜 그 칩 실장 기판을 세정하는 대기압 플라즈마 샤워유닛과;Atmospheric pressure is installed above the transfer means, the plasma generated between the active electrode portion and the ground electrode portion is discharged to the chip mounting substrate on the transfer means through a plurality of plasma holes formed in the ground electrode portion to clean the chip mounting substrate A plasma shower unit; 상기 대기압 플라즈마 샤워유닛에 의해 세정된 후 상기 이송수단을 타고 이 동한 상기 칩 실장 기판에 대해 와이어 본딩 공정을 수행하는 와이어본딩 유닛을;A wire bonding unit which performs a wire bonding process on the chip mounted substrate moved by the transfer means after being cleaned by the atmospheric pressure plasma shower unit; 포함하는 와이어본딩 장치.Wire bonding device comprising. 청구항 4에 있어서, 상기 활성전극부는 유전체 상에 패턴전극이 프린팅되어 형성된 것을 특징으로 하는 와이어본딩 장치.The wire bonding apparatus of claim 4, wherein the active electrode part is formed by printing a pattern electrode on a dielectric. 청구항 5에 있어서, 상기 패턴전극을 덮도록 형성된 절연성의 전극쉴드를 더 포함하는 것을 특징으로 하는 대기압 플라즈마 샤워유닛.The atmospheric pressure plasma shower unit of claim 5, further comprising an insulating electrode shield formed to cover the pattern electrode. 청구항 5 또는 청구항 6에 있어서, 상기 접지전극부에 형성된 다수의 플라즈마홀은 상기 패턴전극의 패턴에 상응하는 배열로써 형성됨을 특징으로 하는 대기압 플라즈마 샤워유닛.The atmospheric pressure plasma shower unit according to claim 5 or 6, wherein the plurality of plasma holes formed in the ground electrode part are formed in an arrangement corresponding to the pattern of the pattern electrode. 칩 실장 기판을 이송수단 위에 올려놓고 그 이송수단을 구동시켜 칩 실장 기판을 이동시키는 공정과;Placing the chip mounting substrate on the transfer means and driving the transfer means to move the chip mounting substrate; 칩 실장 기판이 이송수단을 타고 이동 또는 정지해 있는 중에, 칩 실장 기판 위쪽에서 상기 칩 실장 기판을 향해 플라즈마를 샤워식으로 방출하여 상기 칩 실장 기판을 세정하는 공정과;Washing the chip mounting substrate by shower-releasing plasma from above the chip mounting substrate toward the chip mounting substrate while the chip mounting substrate is moved or stopped by a transfer means; 칩 실장 기판이 세정된 후 상기 이송수단을 타고 이송된 칩 실장 기판에 대해 와이어본딩을 행하는 공정을;Performing wire bonding on the chip mounted substrate transferred by the transfer means after the chip mounted substrate is cleaned; 포함하는 것을 특징으로 하는 와이어본딩 방법. Wire bonding method comprising a.
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