WO2007041877A1 - Source de lumiere a del plane ayant une sortie de lumiere efficace - Google Patents

Source de lumiere a del plane ayant une sortie de lumiere efficace Download PDF

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Publication number
WO2007041877A1
WO2007041877A1 PCT/CH2006/000533 CH2006000533W WO2007041877A1 WO 2007041877 A1 WO2007041877 A1 WO 2007041877A1 CH 2006000533 W CH2006000533 W CH 2006000533W WO 2007041877 A1 WO2007041877 A1 WO 2007041877A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
light source
semiconductor chip
source according
reflector
Prior art date
Application number
PCT/CH2006/000533
Other languages
German (de)
English (en)
Inventor
Gerhard Staufert
Original Assignee
Lucea Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucea Ag filed Critical Lucea Ag
Priority to EP06790924A priority Critical patent/EP1935036A1/fr
Publication of WO2007041877A1 publication Critical patent/WO2007041877A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the invention relates to a light source with at least one light-emitting semiconductor chip.
  • a light-emitting semiconductor chip (or LED chip) is often surrounded by an optically transparent, possibly offset with conversion dye investment, which protects the chip from environmental influences. Furthermore, it is known to mount the chip in a trough-like reflector so that light emitted laterally from the chip is deflected in the forward direction, thereby increasing the efficiency.
  • the boundary surface of the embedding mass toward the surrounding medium is advantageously shaped such that the embedding compound has a domed lens-like structure. As a result, the proportion of light that is totally reflected from the interface back into the investment material and thus lost can be minimized.
  • the light source as a whole were flat, for example, in that its thickness does not exceed 2 mm or even smaller.
  • the mentioned conventional auspicious LEDs are not suitable because they have a considerable extent, in particular in the emission direction. This can not be reduced to a certain extent due to the domicle lens-like structure mentioned, without the losses by total reflection would be considerable.
  • convex lenses forbid for flat light sources but the upper limit must be approximately one plane for geometric reasons.
  • a flat interface between an optical material with a refractive index, for example 1.5, and air, which is arranged closely above the light-generating chip inevitably leads to a large part of the light striking the interface from the chip being totally "reflected back" in the general direction. This is completely undesirable, because in all previously known LED structures this light is lost. The amount of light thus lost depends on the emission characteristics of the chip. For chips that emit a lot of light at a shallow angle, the theoretical loss may be 70% or more.
  • LED chip-based light sources that do not require domicle-type structures have also been proposed, for example in WO 2004/102064 or DE202004011015U.
  • the reflectors described therein have a high optical efficiency (about 90%) and cause the light to be focused on e.g. + 10 ° through.
  • Their height is necessarily about 2 mm or more. This height ensures that light rays which impinge directly on the chip, without deflection at the reflector, on the "upper", approximately flat boundary surface of the optically transparent filling material, are not totally reflected there.
  • a reflector with at least approximately the same optical efficiency but with a height of, for example, only 0.5 mm would not only allow additional applications, but it would result in a mechanically more robust overall structure, because the moments acting on the junction reflector to carrier, are significantly smaller ,
  • the light source should be nevertheless have a good optical efficiency, ie a large part of the light generated by the primary light-generating element should be usable.
  • the structure of the light source should be such that its advantageous properties are also usable if the light source has a conversion dye, ie also emits light of different wavelengths than the wavelength of the light generated primarily by the light-generating element.
  • the light source in addition to at least one light-emitting semiconductor chip as a light-generating element and at least partially surrounding at least partially transparent material, also has a reflector arrangement which has the following properties:
  • Light which is radiated from the interface between the at least partially transparent material and a surrounding medium (back) into the surrounding medium and is not absorbed, is for the most part incident on the reflector arrangement.
  • the reflector arrangement has flat reflection surfaces mainly with respect to a primary emission direction-defined as the center of gravity axis of the light emitted by the semiconductor chip.
  • At least 70% of the reflection surfaces is, for example, at least 45 °, preferably at least 50 °, particularly preferably at least 55 °.
  • At least partially transparent material is meant here at least partially translucent material which surrounds the semiconductor chip, which may be a homogeneous embedding compound or a heterogeneous structure, a structure of different at least partially transparent layers,
  • the at least partially transparent material may contain optically active substances or elements, for example conversion dyes or diffusers.
  • surrounding medium is meant the medium which adjoins the light source, depending on the application, it is the ambient air (or possibly water etc.) or else another transparent object connected to the light source, for example a plate a display, a conversion foil, etc.
  • the surrounding medium is air.
  • the light source is preferably so shallow that a substantial part of the light radiation emitted primarily by the semiconductor chip passes at an angle to the interface under which it is totally reflected, for example at least 20%, at least 30% or even (possibly significantly) more.
  • the reflector arrangement can be a mirror-finished surface of a metal element or mirrored non-metallic element surrounding the LED chip, for example, or an arrangement of different reflective surfaces tapered, for example, circular opening, which is applied with the narrow side of the opening towards the bottom of a support.Together with the support results in a structure of the kind of a very shallow well, in which at the bottom is the LED chip
  • the reflective trough can also be incorporated directly in a suitable carrier, for example by means of a forming process such as stamping or thermoforming or by means of a machining process such as electroerosion or by means of a molding process such as injection molding, for example, the trough is filled with the optically transparent materialUpper limit of the material (corresponding to said interface) does not protrude or not significantly above the upper limit of the reflector, so that a total plate (or platelet-like structure.
  • the interface between the at least partially transparent material and the surrounding medium is, for example, a plane, or it is slightly curved or consists from several facets, wherein, for example, the surface normal (possibly with the exception of microlens-like structures, see below) varies by a maximum of 15 °.
  • the interface is on average approximately perpendicular to the axis of gravity of the light emitted by the semiconductor chip.
  • other configurations are also conceivable due to the application, in which, for example, intentionally an asymmetry of the emission characteristics of the light source is desired.
  • the total height of the light source is less than 1 mm, preferably about 0.5 mm, as mentioned but the said interface approximate a plane.
  • this flat interface between the at least partially transparent material with a refractive index, for example 1.5 and air, which is arranged closely above the light-generating chip, causes a large part of the chip to be totally reflected back onto this interface in the general direction "backwards" .
  • the construction according to the invention makes use of precisely this, otherwise unwanted, total reflection.
  • Below the totally reflective, approximately flat or slightly curved interface of the transparent material is the reflector arrangement, which sends the totally reflected light at a steep angle in the "forward direction" again. In this way, the light within the desired bundling angle emerges from the super flat LED.
  • the inventive approach allows the light source as a whole flat, for example, 1.5 mm or thinner to produce, without the efficiency is significantly impaired. This opens up until now unrealizable
  • a flat LED with bundled light can, for example, in credit cards or similar card-like
  • Objects are introduced, ie the credit card works as a flashlight.
  • Flat light sources with focused light can also be present, for example, in the (possibly red) cover of a pocket knife, without the number of blades having to be reduced for a given pocket knife thickness due to the light source. Even such a pocket knife works as a flashlight.
  • a light source according to the invention can also have an array of light-emitting semiconductor chips (or groups of semiconductor chips), each having an associated reflector. Such can be present as a stiff or foil-like flexible light source due to their small thickness and be used for example as a road marking or wall mounted backlight. With regard to such applications, reference is made to document WO 2004/102064. Also, diffractive or refractive light-deflecting means, which cause an asymmetrical radiation characteristic with respect to the light source plane, can be used in connection with the invention. Such Lichtumlenkstoff are described in the cited document. With regard to applications and light deflection means, the content of WO 2004/102064 belongs to the disclosure content of the present application
  • LED chips give their light in a very large angle range (eg + 80 ° to + 110 °). This means that light rays running flat would impinge only very long distance from the chip or not on the described approximately flat or slightly curved interface of an optically transparent material, but hit flat on the generally flat extending reflector and would thus be distracted in an undesirable angle range , This can be prevented by the mentioned reflector arrangement according to a particularly preferred embodiment having two different zones. The first, from the LED chip farther away zone is responsible for the described back-reflection of the totally reflected rays.
  • a second zone located near the LED chip has one Angle on, with the very flat emerging from the chip beams are unglenkt so steeply that they either emerge directly through the interface, or be directed within the maximum allowable distance from the LED chip from the interface to the first zone of the reflector ,
  • the second zone thus forms a reflecting structure of the type of a very small well, with relatively steep walls around the chip, in comparison to the mentioned trough-like structure, the height of the small well not exceeding the thickness of the semiconductor chip by orders of magnitude but, for example, at most that is three times the thickness of the semiconductor chip.
  • a "micro-optical lens” in the sense of this text is formed by a structure whose characteristic sizes (heights, etc.) are very small in comparison to the dimensions of the light source, for example, the heights of elevations are not greater as 0.1 mm.
  • the micro-optical lens can act as a diffractive and / or a refractive lens.
  • Light source "shine”, etc. refer in this text always on both visible light and radiation in the infrared and ultraviolet range of the
  • a particular category of light sources according to the invention are the white light sources or other light sources which contain a conversion dye.
  • White light by means of LEDs is usually produced today in such a way that the immediate surroundings of a light-emitting semiconductor chip (LED chip) emitting blue or ultraviolet light are enriched with a dye (phosphorus). This dye absorbs a portion of the short wavelength light and is thereby excited to emit longer wavelength light. The mixture of different wavelengths produces white. The emission of the longer-wavelength light from a certain colorant grain takes place over the full solid angle, which means that a very large proportion of the emitted light is directed "backwards" and lost. This causes a dramatic reduction of the light output to half or less. Although it has already been proposed in such an arrangement, the environment of the LED chip with a trough-like reflector Mistake. This solves the problem of reducing the light output but for geometric reasons only to a small extent.
  • a first possibility is that the reflective surfaces of the reflector assembly is coated prior to assembly with a thin layer of conversion dye. This has the effect that short-wave light not absorbed by the dye continues to be deflected at the metal reflector into the desired angular range. But it also causes the dye to be reversed, i. in the direction of the reflector, emitted light is deflected in the desired direction. Calculations show that in this way compared to a LED without conversion significantly less than 20% of the rays are lost for the desired spatial area and in total only less than 5%.
  • a second possibility is that the repeatedly mentioned approximately flat or slightly curved interface of the at least partially transparent material is coated with conversion dye, which is preferably embedded in an optically transparent material with the same or similar refractive index as the material forming the interface.
  • the coating can be achieved, for example, very efficiently by pouring and curing the mixture.
  • the dye may be one of the known inorganic dyes, such as YAG: Ce.
  • organic solubilizing dye such as a perylene (Lumogen from BASF).
  • solubilizing dyes firstly have an increased quantum efficiency, secondly extremely low concentrations ( ⁇ 1% or even ⁇ 0.1%) are required, so that the transparent material also remains transparent and thirdly, no scattering occurs (because no longer exist because the dye is dissolved) on color grains. Overall, this results in a further, not inconsiderable increase in the efficiency.
  • Particularly preferred is the combination of such a dissolved organic dye with the filler silicone.
  • the inventive design of the light source in combination with a conversion dye brings an improved light output.
  • a significant increase in the conversion efficiency brings an improved luminous flux and thus by a. improved ratio lumens / price unit a wider field of application of the LED.
  • 5a and 5b each show a sectional view of a light source according to the invention
  • FIGS. 6, 7a and 7b each show a sectional view of a conversion light source according to the invention
  • top bottom and lateral in this text are always to be understood in relation to the emission direction, ie the light source radiates from “bottom” to “top.” This also corresponds to the representation in all figures except for the FIGS. 8a and 9.
  • the light source 10 according to the invention according to FIG. 1 has an LED chip 11 which is arranged on a support (not shown) with means for electrical contacting of the LED chip and with the exception of a lower surface resting on the support of a transparent material, namely surrounded by a transparent investment material 16.
  • Light emitted by the chip 11 in the forward direction passes through the interface 13 to the environment and is usable.
  • the light source 10 as a whole is so flat that light coming from the semiconductor chip and emitted at an angle to the forward direction is partially totally reflected and reflected back from the interface 13.
  • a reflector 17 is arranged, which deflects from chip coming, reflected by the interface light by reflection at a reflection surface 12.
  • the reflector 17 can also serve as a mechanical protection for the LED chip, the contacts and the investment material at the same time and divert the heat generated by the chip partially upwards.
  • the reflector 17 may be made of aluminum or another metal or of coated plastic.
  • the investment material 16 may be, for example, permanently elastic silicone or amorphous Teflon which partially envelops the chip and forms the totally reflecting interface. It can also consist of several Consist of layers of transparent material, for example, consist of a chip partly enveloping permanently elastic material and an overlying also transparent but, for example, curable material (eg epoxy) exist.
  • FIGS. 1 to 7b show the path of selected light beams (in FIG. 1: center: light emitted in the forward direction, right: in the manner described above by total reflections at interface 13 and reflection surface 12 deflected light, to the left of the LED chip in FIG very shallow angle laterally emitted light).
  • the illustration shows that the light source as a whole also emits light in the lateral direction. This is, for example, the case for the light beam shown on the left in the figure, which runs flat and does not impinge on the described approximately even or slightly curved interface of an optically transparent material at a very great distance from the chip or flat, but flat on the generally flat extending reflector and thus is deflected in an approximately parallel to the light source plane angle range.
  • the lateral transmission of light must not be detrimental or even desirable.
  • such laterally emitted light may also be 'lost', i. not be usable.
  • FIG. 1 light source 20 A correspondingly modified compared to FIG. 1 light source 20 is shown in Figure 2.
  • the first, further away from the LED chip zone 22a of the reflection surface is responsible for the described back-reflection of the totally reflected rays.
  • a second zone 22b located near the LED chip has an angle at which the very flat emerging from the chip beams are steered so steeply upwards that they either emerge directly through the interface, or within a maximum allowable distance from LED chip from the interface to the first zone of the Reflectors are steered.
  • the leftmost light beam in the figure illustrates the function of the second zone.
  • the height of the chip at least partially surrounding, formed by the second zone trough-like reflective structure is only slightly larger than the thickness of the semiconductor chip in the illustrated embodiment.
  • FIG. 2 there are still light rays which emerge from the light source in a very flat angle, which is undesirable depending on the application.
  • a light beam is illustrated in FIG. 2, namely the second light beam from the right. It is about light, which hits at an angle close to the critical angle for total reflection on said interface. So that also such light can be deflected in a desired direction, it is proposed according to FIG. 3 to provide the light source 30 with lens-like structures.
  • the interface has a lens in its central region 33a. This can, if the flatness of the light source is not important, be present as a convex refractive lens.
  • a peripheral area 33a of the interface is substantially flat as in the above embodiments.
  • a light source 40 according to the invention is also shown in FIG. There you can see how the LED chip 41 is applied to a thin carrier 44.
  • the reflector 42 like that of FIG. 2, has at its reflection surface a first and a second zone 42b; 42a.
  • the boundary surface 43 of the embedding compound 46 may, but need not be provided with a diffractive or refractive, microlens-like structure.
  • the carrier may be formed, for example, in the manner of a semiconductor plate, a flex-print or a printed circuit board structure with flexible and rigid sections. It has means (preferably contact pads) for contacting the semiconductor chip (s),
  • FIG. 5a An alternative embodiment of a light source 50 can be seen in FIG. 5a.
  • the light source has a solid body 52 made of optically transparent material whose outer surfaces on the one hand form the totally reflecting approximately flat boundary surface 52c and, on the other hand, a reflecting surface 52a, 52b which also totally replaces the above metal reflector and which is totally reflective against air.
  • the reflective surfaces can also have two zones 52a, 52b as shown and can optionally be provided with a reflective coating, whereby they also reflect light incident at a steep angle.
  • the solid body 52 is placed on the LED chip 51 with a cavity 52d present in its center, wherein the addressed cavity is filled with an optically transparent investment material (eg silicone, amorphous Teflon) which is still viscous at this time.
  • an optically transparent investment material eg silicone, amorphous Teflon
  • this solid body has a "jacket", e.g. in the form of a hollow cylinder 52e.
  • the embedding compound and the solid body 52 together form the optically transparent material; the refractive indices of the embedding compound and the solid body are preferably identical or almost identical.
  • FIG. 6 shows a modification of the embodiment of FIG. 4, in which the light source 60 together with chip 61, carrier 64, reflector 62 and embedding material 63 have a Conversion dye has. This is present in a coating 65 of the reflection surfaces (two zones 62a, 62b) of the reflector 62 are also shown here.
  • Light not emitted in the forward direction by the LED chip 61 passes either directly or by reflection at the interface 63 to the conversion dye. Due to the procedure according to the invention, this light which is not absorbed or emitted in the backward direction is not lost but can be emitted forward after reflection at the reflection surface (if appropriate after a conversion). Light emitted by the chip in the forward direction is not converted in this embodiment. This can be accommodated if necessary by providing the conversion dye in a condition and concentration such that the light emitted by it and the light emitted in forward direction complement each other to light the desired color composition (for example white light).
  • a multilayer structure may be present, wherein at least one of the layers contains conversion dye.
  • FIG. 7a shows the aforementioned second possibility, according to which the interface 73 of the light source 70 of a conversion dye-containing coating 75 is provided.
  • the optically transparent material which forms the coating together with the dye and serves as a matrix, preferably has a refractive index similar to the embedding material 76 (or other material forming the optically transparent material, abutting the surface 73).
  • Reference numerals 71 and 74 denote the LED chip and the carrier, respectively; 72a and 72b represent the second or first zone of the reflection surface.
  • the reflection surface of the reflector has, in addition to the zones 72a, 72b, a third zone 72c with a steep angle (ie the angle to the axis of gravity of the primary emission direction is small, for example less than 45 °).
  • a steep angle ie the angle to the axis of gravity of the primary emission direction is small, for example less than 45 °.
  • FIGS. 8a and 8b a panel-like light source 80 configured according to the invention with a plurality of LED chips 81 arranged like an array is shown in a very schematic representation in sections.
  • the light source has a carrier 84 holding the plurality of chips.
  • the reflector body 87 can be in one piece as shown, or it can be present per chip a separate reflector body.
  • the individual chips - instead of individual chips may also be arranged in groups of, for example. In different wavelengths emitting chips - reflective surfaces may as shown directly adjoin one another, or they may be spaced apart.
  • the reflection surfaces illustrated in FIGS. 8a and 8b also have a first zone 82b and a second zone 82a whose function has already been explained, for example, with reference to FIG.
  • a conversion coating 85 or film is present; Of course, this is not the case with every panel-type light source designed according to the invention.
  • FIG. 9 illustrates the case in which the light source according to the invention is designed as a line light source is.
  • the LED chips 91 are arranged in a linear configuration; the zones 92a, 92b of the reflecting surface are present on both sides with respect to the linear arrangement.
  • a panel-type light source may also have a juxtaposition of linear arrays similar to the light source of FIG.
  • inventive light source as a single LED, as an RGB light source, as a line or panel-like light source (ready-made or with fixed dimensions), etc. are possible.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne une source de lumière (20) qui présente, en plus d'au moins une puce à semi-conducteur luminescente (21) en tant qu'élément luminescent, et d'une matière au moins partiellement transparente (26) qui entoure au moins partiellement cet élément, également un dispositif réfléchissant qui a les propriétés suivantes: une grande partie de la lumière qui est émise (renvoyée) par la surface limite (23) entre la matière/les matières au moins partiellement transparente(s) et un milieu environnant, vers l'intérieur du milieu environnant, et qui n'est pas absorbée, rencontre le dispositif réfléchissant; une grande partie de la lumière qui provient de ladite surface limite et rencontre le dispositif réfléchissant, est réfléchie en direction de la surface limite.
PCT/CH2006/000533 2005-10-14 2006-10-02 Source de lumiere a del plane ayant une sortie de lumiere efficace WO2007041877A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP06790924A EP1935036A1 (fr) 2005-10-14 2006-10-02 Source de lumiere a del plane ayant une sortie de lumiere efficace

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH16642005 2005-10-14
CH1664/05 2005-10-14

Publications (1)

Publication Number Publication Date
WO2007041877A1 true WO2007041877A1 (fr) 2007-04-19

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PCT/CH2006/000533 WO2007041877A1 (fr) 2005-10-14 2006-10-02 Source de lumiere a del plane ayant une sortie de lumiere efficace

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009063382A1 (fr) * 2007-11-13 2009-05-22 Koninklijke Philips Electronics N.V. Panneau d'éclairage
DE102008013898A1 (de) * 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Anordnung und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013100121A1 (de) * 2013-01-08 2014-07-10 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
DE102015102460A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtemittierenden Bauteils und lichtemittierendes Bauteil
DE202017103633U1 (de) * 2017-06-20 2018-09-24 Tridonic Jennersdorf Gmbh LED Modul mit Reflektor und integrierten Farbkonversionsmitteln

Citations (4)

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Publication number Priority date Publication date Assignee Title
DE19807758A1 (de) * 1997-06-03 1998-12-10 Hewlett Packard Co Lichtemittierendes Element mit verbesserter Lichtextraktion durch Chipformen und Verfahren zum Herstellen desselben
DE10059532A1 (de) * 2000-08-08 2002-06-06 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
US20020085390A1 (en) * 2000-07-14 2002-07-04 Hironobu Kiyomoto Optical device and apparatus employing the same
EP1427029A2 (fr) * 2002-12-05 2004-06-09 Omron Corporation Led

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19807758A1 (de) * 1997-06-03 1998-12-10 Hewlett Packard Co Lichtemittierendes Element mit verbesserter Lichtextraktion durch Chipformen und Verfahren zum Herstellen desselben
US20020085390A1 (en) * 2000-07-14 2002-07-04 Hironobu Kiyomoto Optical device and apparatus employing the same
DE10059532A1 (de) * 2000-08-08 2002-06-06 Osram Opto Semiconductors Gmbh Halbleiterchip für die Optoelektronik
EP1427029A2 (fr) * 2002-12-05 2004-06-09 Omron Corporation Led

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009063382A1 (fr) * 2007-11-13 2009-05-22 Koninklijke Philips Electronics N.V. Panneau d'éclairage
DE102008013898A1 (de) * 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement, Anordnung und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102013100121A1 (de) * 2013-01-08 2014-07-10 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
US9318678B2 (en) 2013-01-08 2016-04-19 Osram Opto Semiconductors Gmbh Reflecto trough for an optoelectronic semiconductor component
DE102015102460A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtemittierenden Bauteils und lichtemittierendes Bauteil
DE202017103633U1 (de) * 2017-06-20 2018-09-24 Tridonic Jennersdorf Gmbh LED Modul mit Reflektor und integrierten Farbkonversionsmitteln

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