WO2007040673A1 - Pointe d'emission de champ en diamant et procede de formation - Google Patents

Pointe d'emission de champ en diamant et procede de formation Download PDF

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Publication number
WO2007040673A1
WO2007040673A1 PCT/US2006/022780 US2006022780W WO2007040673A1 WO 2007040673 A1 WO2007040673 A1 WO 2007040673A1 US 2006022780 W US2006022780 W US 2006022780W WO 2007040673 A1 WO2007040673 A1 WO 2007040673A1
Authority
WO
WIPO (PCT)
Prior art keywords
diamond
conductive metal
substrate
layer
forming
Prior art date
Application number
PCT/US2006/022780
Other languages
English (en)
Inventor
Jonathan Gorrell
Original Assignee
Virgin Islands Microsystems, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/238,991 external-priority patent/US7791290B2/en
Application filed by Virgin Islands Microsystems, Inc. filed Critical Virgin Islands Microsystems, Inc.
Publication of WO2007040673A1 publication Critical patent/WO2007040673A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond

Definitions

  • This disclosure relates to an improved charged particle field emission tip.
  • Electromagnetic radiation is produced by the motion of electrically charged
  • Electromagnetic radiation is essentially
  • electromagnetic waves The term can also refer to the emission and propagation of such
  • Electromagnetic radiation falls into
  • Electromagnetic radiation for electron oscillation or excitation at the frequency desired. Electromagnetic radiation
  • electromagnetic radiation at a desired frequency become generally smaller and harder to
  • the micro resonant structure can be used for visible light
  • micro-resonance structures can rival semiconductor devices in size
  • non-semiconductor illuminators such as incandescent, fluorescent, or other
  • FIG. 1 shows a diagrammatic cross-section of a first step in the production
  • FIG. 2 shows a diagrammatic cross-section of the next step in the
  • FIG. 3 shows a diagrammatic cross-section of the next step in the
  • FIG. 4A shows the results of etching a diamond layer during the formation
  • FIG. 4B shows a completed diamond field emission tip from the structure
  • FIG. 5 shows a diagrammatic cross-section of a first step in the production
  • FIG. 6 shows a diagrammatic cross-section of a first step in the production
  • FIG. 7A shows a diagrammatic cross-section of a metal layer etching step
  • FIG 7B shows a completed diamond field emission tip from the structure
  • a surface of a micro-resonant structure is excited by energy from an
  • a source of charged particles referred to
  • the beam can include ions (positive or negative),
  • the beam may be produced by any source, including,
  • a tungsten filament e.g., without limitation an ion gun, a tungsten filament, a cathode, a planar vacuum
  • triode an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, an
  • the beam travels on a path approaching the varying field.
  • the beam is
  • Characteristics of the micro-resonant structure including shape, size and type
  • the intensity of the varying field can be
  • intensifiers A TM ->nn 7 r
  • micro-resonant structure may include structures, nano-structures, sub-
  • An improved charged particle emission tip includes diamond as one of the
  • a substrate material 10 such as
  • CVD chemical vapor deposition
  • the "photoresist" layer 14 is then patterned, as shown in Fig. 2, by using
  • etching techniques including, for example, isotropic etching, RIE etching
  • a reactive ion etch that is tuned to provide an isotropic etch as is known to
  • a conductive material such as, for example, silver (Ag) 22, is then
  • the silver will typically extend above the surface of the diamond
  • edge 34 at least slightly exposed. That way, edge 34 will comprise the emission edge or
  • the shape of the extended portion 26 of the deposited silver 22 can be one of a
  • the diamond layer 12 will be further etched, for example by plasma etching, to cut away
  • This structure 30 can be Attorney Docket 2549-0054
  • P CT/ ⁇ SOB/ ES 70 O formed into a number of shapes including, for example, a circular collar or ring that
  • the structure 30 can be segmented rather than a
  • outer side walls 32 of the resulting final shape 30 will preferably be
  • structure 30 preferably extends only a part of the way up the total vertical height of the
  • deposited silver 22 will comprise the edge, line or tip from which emissions will
  • the substrate 10 will be cut into individual, separate pieces
  • a second method of forming diamond field emission tips begins with a
  • Fig. 5 was formed by being deposited, for example, by CVD techniques.
  • layer 42 is thereafter suitably patterned by depositing a layer of a photoresist or e-beam
  • resist material such as PMMA
  • the diamond layer is then etched by using typically Attorney Docket 2549-0054
  • Each diamond post 44 can have any shape that is desired and
  • a layer of highly conductive metal 46 for example,
  • silver (Ag) is then deposited or otherwise formed on and around the diamond posts 44,
  • the metal layer preferably about 100 nm thick.
  • the layer 46 can be shaped to extend around
  • the posts 44 or layer 46 can undulate over and around the diamond posts 44.
  • an etching process for example slightly anisotropic reactive ion etching, will be
  • PC T/ U S OB / ⁇ S S 78 O form an angle between the top surface 56 of substrate 40 and the outer wall 54 ranging
  • posts 44 can have a spherical, triangular, rounded or other shape. However, it should be
  • metal structure 52 could have other shapes, such as, for example, and
  • metal structure 52 is formed about the sides of the diamond posts 44 substantially in the

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cold Cathode And The Manufacture (AREA)

Abstract

Cette invention concerne une pointe d'émission de champ en diamant et des procédés de formation de telles pointes d'émission de champ en diamant destinées à être utilisées avec des cathodes qui servent de source de particules chargées et qui émettent des faisceaux de particules chargées.
PCT/US2006/022780 2005-09-30 2006-06-12 Pointe d'emission de champ en diamant et procede de formation WO2007040673A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/238,991 2005-09-30
US11/238,991 US7791290B2 (en) 2005-09-30 2005-09-30 Ultra-small resonating charged particle beam modulator
US11/418,263 2006-05-05
US11/418,263 US7791291B2 (en) 2005-09-30 2006-05-05 Diamond field emission tip and a method of formation

Publications (1)

Publication Number Publication Date
WO2007040673A1 true WO2007040673A1 (fr) 2007-04-12

Family

ID=37906475

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/022780 WO2007040673A1 (fr) 2005-09-30 2006-06-12 Pointe d'emission de champ en diamant et procede de formation

Country Status (1)

Country Link
WO (1) WO2007040673A1 (fr)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips

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