Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
  • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
  • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/481—Disposition
  • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
  • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/481—Disposition
  • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
  • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/102—Material of the semiconductor or solid state bodies
  • H01L2924/1025—Semiconducting materials
  • H01L2924/10251—Elemental semiconductors, i.e. Group IV
  • H01L2924/10253—Silicon [Si]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/30—Technical effects
  • H01L2924/301—Electrical effects
  • H01L2924/3025—Electromagnetic shielding
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/483—Containers
  • H01L33/486—Containers adapted for surface mounting
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/58—Optical field-shaping elements
  • H01L33/60—Reflective elements

Definitions

• the present invention relates to a method of manufacturing a light emitting device used in a backlight source, an LED display, a signal device, an illumination, and various indicators, and more particularly, to a light emitting device in which a mount portion for bonding a chip and a reflector for reflecting light are adhered after being separately manufactured.
• a light emitting device is an electronic device generally formed of a chemical compound.
• a typical LED generates light when a forward voltage is supplied to both electrodes thereof, that is, a cathode and an anode.
• an LED that generates an infrared ray is referred to as an infrared emitting diode (IRED), to be distinguished from an LED that emits a visible ray.
• IRED infrared emitting diode
• LEDs can effectively emit a light beam with vivid color, and have longer lifespan and better driving characteristics than those of a light bulb or a fluorescent lamp.
• the LEDs are used for various indicators, remote controllers, and various light sources. Further, the LEDs are widely used in illuminations for vehicles and displays.
• FIG. 1 is a cross-sectional view of a lead-type light emitting diode.
• the lead-type light emitting diode includes a mount-lead 105 and an inner-lead 106.
• An LED chip 102 is mounted on a cup portion 105a of the mount-lead 105.
• a specific photo-luminance phosphor is applied in the cup portion 105a so as to encompass the LED chip 102, or a coating resin 101 which is not applied is filled and is then resin-molded.
• an n-electrode and a p-electrode of the LED chip 102 are respectively connected to the mount-lead 105 and the inner-lead 106 via a wire 103.
• the substrate may be directly connected to the mount-lead 105.
• a mold member 104 has a lens function for condensing or diffusing light emitted from the LED chip 102.
• a transparent resin material or a glass material such as an epoxy resin, a urea resin, a silicon resin, etc., is suitable for the mold member 104 due to its excellent durability. Further, the mold member 104 has a function for externally protecting the LED chip 102, the conductive wire 103, and the coating resin 101.
• the photo-luminance phosphor When the photo-luminance phosphor is included within the lead-type light emitting device having the aforementioned structure, a portion of light emitted by the light emitting device chip (LED chip) 102 excites the photo-luminance phosphor contained in the coating resin 101, and generates phosphor having a wavelength different from that of the LED chip 102. In this case, light output from the LED chip 102 is mixed in color irrespective of phosphor generated by the photo-luminance phosphor and excitation of the photo-luminance phosphor.
• LED chip light emitting device chip
• FIG. 2 is a cross-sectional view of a chip-type light emitting diode according to an embodiment of the present invention.
• An LED chip 202 is mounted on a metal-plated PCB board 201. Thereafter, a mold resin 204 is shielded.
• FIG. 3 is a cross-sectional view of a chip-type light emitting diode according to another embodiment of the present invention.
• the chip-type light emitting diode is formed such that a mount portion 300 and a chassis 304 are integrated using injection molding.
• An LED chip 302 is mounted on a concave portion of the chassis 304, and a coating portion 301 is formed on the concave portion.
• the LED chip 302 is fixed by an epoxy resin containing, for example, silver (Ag).
• An n-electrode and a p- electrode of the LED chip 302 are respectively connected to a PN electrode terminal 305 disposed on the chassis 304 by using die-bonding of a conductive wire 303.
• the PN electrode terminal 305 encompasses the upper side and the lower side of the mount portion 300. When any one of the electrodes of the LED chip 302 is directly connected to the PN electrode terminal 305, only one conductive wire 303 is necessary.
• the light emitting diode having the aforementioned structure if the photo- luminance phosphor is used, light generated from the photo-luminance phosphor and light of the light emitting diode that is transmitted without being absorbed by the photo-luminance phosphor are output while being mixed in color. As a result, the light emitting diode also outputs light having a different wavelength from that of light generated by the LED chip 302.
• FIGS. 1 and 3 show a case of providing a reflector (reflective surface) to further effectively emit light generated in an isotropic manner from an illuminant
• FIG. 2 shows a case of not providing a reflector for reflecting light.
• Light has to be emitted not only upwards but also laterally with respect to the surface where the illuminant is mounted due to a difference in an optical refractive index between mold resin and air and a design of a mold resine shape.
• the light emitting diode of FlG. 3 has a structure suitable for injection molding, a heat dissipation function is not provided, and light is weakly reflected from an internal resin. Thus, it is not appropriate for illumination.
• the wire portion has to be appropriate for an injection device, and a plastic reflector formed using the injection molding is not conductive. Further, a plurality of LED chips cannot be formed on the mount portion 300. Disclosure of Invention Technical Problem
• an object of the present invention is to provide a light emitting device in which a mount portion for bonding a chip and a reflector for reflecting light are adhered after being separately manufactured.
• a light emitting device comprising: a mount portion on which one or more LED chips are bonded; a wire portion which is formed to connect an n-electrode and a p-electrode of the LED chip; and a reflector which is separated from the mount portion, and is bonded with the mount portion so as to reflect light emitted from the LED chip.
• the mount portion has a groove in the middle, and the LED chip is bonded with the groove.
• the LED chip is bonded in various polygonal shapes such as a square or a lozenge.
• one ore more LED chips are formed, wherein internal reflectors are respectively formed around areas where the plurality of LED chips are formed, and external reflectors are further formed out of areas where the plurality of internal reflectors are formed.
• the LED chips and the internal reflectors are subjected to molding or lens formation, and the external reflectors are subjected to molding or lens formation so as to be entirely encompassed.
• a Zener diode is further formed on the silicon mount portion so as to protect an ESD of the LED chip.
• the Zener diode is formed in a silicon wafer manufacturing process.
• the reflector has a hole in various shapes such as a square, a rectangle, a circle, or an oval, and a size thereof and a distance from an illuminant are determined according to directivity and brightness of the LED chip.
• a hole of which a center is placed with the LED chip is formed by using a wet-etching method based on a typical MEMS manufacturing method or a dry-etching method.
• the hole of which a center is placed with the LED chip is formed by using a stamping method based on mold punching or an etching method.
• FIG. 1 is a cross-sectional view of a lead-type light emitting device.
• FIG. 2 is a cross-sectional view of a chip-type light emitting device according to an embodiment of the present invention.
• FIG. 3 is a cross-sectional view of a chip-type light emitting device according to another embodiment of the present invention.
• FIG. 4 is a cross-sectional view of a light emitting device according to an embodiment of the present invention.
• FIG. 5 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.
• FIGS. 6 and 7 are cross-sectional views of a light emitting device according to another embodiment of the present invention.
• FIGS. 8 and 9 are plan views of a light emitting device according to another embodiment of the present invention. [37] FIGS.
• FIGS. 10 and 11 are cross-sectional views of a light emitting device according to another embodiment of the present invention.
• FIGS. 12 and 13 show a wire portion of a light emitting device according to an embodiment of the present invention.
• FIGS. 14 and 15 show an LED chip mounted on a mount portion according to an embodiment of the present invention.
• FIGS. 17 to 19 show a light emitting device including a Zener diode according to an embodiment of the present invention.
• FIGS. 20 and 21 are plan views of a light emitting device having multi-chips according to an embodiment of the present invention.
• FIGS. 22 to 26 are cross-sectional views of a light emitting device having multi- chips according to an embodiment of the present invention.
• FIGS. 27 to 29 show a shape of a reflector formed in a light emitting device having multi-chips according to an embodiment of the present invention.
• FIG. 30 shows a light emitting device according to another embodiment of the present invention.
• FIG. 31 is a perspective view of a light emitting device having multi-chips according to an embodiment of the present invention.
• FlG. 4 is a cross-sectional view of a light emitting device according to an embodiment of the present invention.
• the light emitting device is constructed such that a mount portion 401 on which an illuminant is placed and a reflector 402 which forms a reflective surface are separated from each other.
• the reflector 402 is formed of silicon or a metal material such as aluminum, nickel, or copper. Further, gold, silver, tin, or other compound metals may be plated with silicon or the above metal material.
• a hole portion 402a of which a center is placed with the illuminant is formed by using a wet-etching method based on a typical MEMS manufacturing method or a dry-etching.
• a corresponding metal plate is used.
• the hole portion 402a is formed by using a stamping method based on mold punching or an etching method, or various methods in addition thereto.
• a thickness 402b and an angle 402c of the reflector 402 are determined in association with a design of optical feature of an LED chip.
• a shape of the hole portion 402a is square, rectangle, circle, or oval.
• a size and a distance 402d from the illuminant are determined according to directivity and brightness of the light emitting device.
• a shape of the hole portion 402a is determined according to a crystal orientation of a silicon substrate.
• the shape may be square or rectangle according to a pattern.
• a metal material on the surface of the reflective surface 402e may be shielded by using plating, depositing, or sputtering.
• the mount portion 401 on which an LED chip 403 is placed is formed of a material such as silicon, ceramic, metal, or PCB.
• a metal layer which is shielded by using an appropriate method for each material is patterned, so that an anode terminal and a cathode terminal are separated from each other by using these materials.
• the reflector 402 and the mount portion 401 may be adhered by using a synthetic resin such as an epoxy resin, a acryl resin, or an imide resin.
• the mount portion 401 is formed of silicon, ceramic, or PCB. When a metal material on a bonding portion of the reflector 402 is shielded, the reflector 402 and the mount portion 401 may be connected by the use of heat, or a suitable pressure along with heat.
• the bonding portion with respect to the reflector 402 may be selectively shielded by depositing or sputtering a metal material in a wafer manufacturing process.
• the bonding portion is generally shielded by using a plating method.
• the mount portion 401 and the reflector 402 are formed of silicon, the mount portion 401 and the reflector 402 may be bonded by using a typical wafer direct bonding method.
• the reflector 402 alone may be used even when the mount portion 401 is not mounted.
• a substrate formed of a conductive material instead of a substrate formed of a conductive material, a substrate formed of a ceramic material or a PCB material is used, and a metal material is plated on the upper side thereof.
• the reflector 402 if the reflector 402 is mounted or attached on a ceramic material or a PCB material, and thereafter a chip is shielded with a mold resin, heat may not be smoothly transferred from the mount portion 401 to the reflector 402. In this case, the reflector 402 mainly performs a function of reflector that simply reflects light to be emitted.
• the reflector 402 may perform a function of heat sink for dissipating heat generated from the light emitting device. Further, when a material of which a thermal conductivity is significantly different from that of the mount portion 401 is determined for a reflector, the heat radiating function may be further intensified.
• a heat radiating characteristic may be further improved when a plated portion of the ceramic material or the PCB material adhered to the reflector 402 is adhered to an anode terminal or a cathode terminal via a connection path independent from the reflector of the light emitting device by using a multi-layer processing method.
• the reflector is formed of a metal material or silicon.
• the reflector is aligned with respect to the substrate in the same manner as when a typical light emitting device s mold resin, a wire portion, a PCB, and ceramic are aligned with respect to the substrate. That is, within a pin of which a position is fixed, an alignment hole having the same x-y coordinates are aligned to each edge of a plate. Thereafter, a mold for the mold resin is also aligned in the same position, so that a shielding mold or a plastic lens is formed.
• FIG. 5 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.
• a first reflector 404 is formed by using a ceramic material above a mount portion
• a second reflector 402 is formed above the first reflector 404.
• the second reflector 402 is inserted inside a hole 404a formed in the first reflector 404.
• FIGS. 6 and 7 are cross-sectional views of a light emitting device according to another embodiment of the present invention.
• a wire portion 505 is formed below a mount portion 501 where an LED chip 503 is placed. Then, molding or lens formation is carried out.
• a mold member 506 has a shape of a concave lens or a shape of a convex lens. Further, the mold member 506 has a shape of circle or a shape of oval, or a shape in combination of circle oval in terms of light emission.
• the wire portion 505 is formed below the mount portion 501.
• a reflector 502 is formed on the mount portion 501, and a conductive adhesive 507 is inserted between the mount portion 501 and the wire portion 505.
• the wire portion 505 is formed in the shape of U above and below of the mount portion 501.
• the reflector 502 is formed above the wire portion 505.
• the remaining electrode of the LED chip 503 is bonded with the remaining wire portion 505 by a conductive wire.
• a shape and a size of the mold and the lens are adjusted according to a height and a reflection angle of the reflector 502.
• FIGS. 8 and 9 are plan views of a light emitting device according to another embodiment of the present invention.
• FlG. 8 is a plan view of a light emitting device having the same shape as that used in FlG. 6.
• the light emitting device is constructed such that a wire portion 605 is formed below a mount portion 601.
• a reflector 602 and an LED chip 603 are formed on the mount portion 601.
• FIG. 9 is a plan view of a light emitting device having the same shape as that used in FlG. 7.
• the light emitting device is constructed such that the wire portion 605 is formed above the mount portion 601 so as to encompass a specific portion of a lateral side and a lower side.
• the reflector 602 and the LED chip 603 are formed on the wire portion 605.
• a positive electrode and a negative electrode of the wire portion 605 are separated into a left side and a right side.
• the positive electrode and the negative electrode are open in order to prevent electrical short.
• FIGS. 10 and 11 are cross-sectional views of a light emitting device according to another embodiment of the present invention.
• a concave portion 708 is formed in the middle of a mount portion 701.
• An LED chip 703 is formed in the concave portion 708.
• FIGS. 12 and 13 are top views of a wire portion of a light emitting device which is packaged into a final product of the light emitting device of FlG. 6, according to an embodiment of the present invention.
• An LED chip 803 is placed above a mount portion 801.
• a reflector 802 is formed around the LED chip 803.
• the mount portion 801 is placed above a wire portion 804.
• a lens 805 may be formed in a suitable shape.
• a positive electrode and a negative electrode are separated into a left side and a right s ide.
• the positive electrode and the negative electrode are formed on either the left side or the right side.
• FIGS. 14 and 15 show an LED chip mounted on a mount portion according to an embodiment of the present invention.
• an LED chip 903 is mounted on a mount portion 901 in a square shape equivalent to that of a reflector 902 formed on the mount portion 901.
• the LED chip 903 is mounted on the mount portion 901 in a lozenge shape equivalent to that of the reflector 902 formed on the mount portion 901.
• FIG. 16 shows a reflector having a circular shape.
• the shape of the reflector is not limited thereto.
• FIGS. 17 to 19 show a light emitting device including a Zener diode according to an embodiment of the present invention.
• FlG. 17 shows a connection of a Zener diode 1005 in a state that an LED chip 1003 is mounted in a square shape.
• FIG. 18 shows a connection of the Zener diode 1005 in a state that the LED chip 1003 is mounted in a lozenge shape.
• FIG. 19 shows a connection of the Zener diode 1005 in a state that a plurality of LED chips 1003 is provided.
• a mount portion 1001 where the LED chip 1003 is placed is formed of silicon
• a reflector 1002 is attached to a silicon mount portion 1001
• the Zener diode 1005 is formed on the mount portion 1001 in order to protect an ESD of the LED chip 1003.
• the Zener diode 1005 is formed in a silicon wafer manufacturing process.
• the LED chip 1003 is connected to the silicon mount portion 1001 where the LED chip 1003 is connected to the silicon mount portion 1001 where the
• Zener diode 1005 is generally formed by using a flip chip process based on a metal bumper process. [87] In the flip chip process, the surface of the LED chip 1003 is faced down, so that an anode of the LED chip 1003 is adhered to a cathode of the Zener diode 1005, and a cathode of the LED chip 1003 is adhered to an anode of the Zener diode 1005.
• the LED chip 1003 is attached to the mount portion 1001 by using a general die- bonding method instead of the flip chip process, the surface of the LED chip 1003 is faced up so that the Zener diode 1005 separately manufactured is closely bonded with the LED chip 1003, so as to be connected with each other by a wire such as a metal line.
• Zener diode 1005 for protecting an ESD is connected to the LED chip 1003.
• the LED chip 1003 is connected to the Zener diode 1005 by using the flip chip process.
• FIGS. 20 and 21 are plan views of a light emitting device having multi-chips according to an embodiment of the present invention.
• a first reflector 1102a is arranged for a plurality of LED chip
• a second reflector 1102b entirely encompassing them is arranged in a square shape.
• a first reflector 1102a is arranged for a plurality of LED chip
• a second reflector 1102b entirely encompassing them is arranged in a square shape.
• FIGS. 22 to 26 are cross-sectional views of a light emitting device having multi- chips according to an embodiment of the present invention.
• molding or lens formation is carried out to encompass a first reflector 1202a each formed in a plurality of LED chips 1203. Further, molding or lens formation is carried out to encompass a second reflector 1202b.
• the mold has a convex shape inwardly and outwardly, and the lens has a convex shape.
• FIG. 23 shows an example of molding or lens formation in the absence of the second reflector 1202b each formed in the plurality of LED chips 1203.
• the mold has a convex shape inwardly and outwardly, and the lens has a convex shape.
• FIG. 24 shows another example of molding or lens formation in the absence of the second reflector 1202b each formed in the plurality of LED chips 1203.
• an inward mold or a lens is formed in a concave shape, and an outward mold or a lens is formed in a convex shape.
• FIG. 25 shows another example of molding or lens formation in the absence of the second reflector 1202b each formed in the plurality of LED chips 1203.
• molding or lens formation is carried out only inwardly to have a convex shape.
• FIG. 26 shows another example of molding or lens formation in the absence of the second reflector 1202b each formed in the plurality of LED chips 1203.
• an inward mold or a lens is formed in a convex shape
• an outward mold or a lens is formed in a concave shape.
• the lens may be formed in various shapes such as a convex shape or a concave shape.
• FIGS. 27 to 29 show a shape of a reflector formed in a light emitting device having multi-chips according to an embodiment of the present invention.
• FlG. 30 shows a light emitting device according to another embodiment of the present invention.
• a phosphor 1408 is inserted between an LED chip 1403 and a reflector 1402.
• FIG. 31 is a perspective view of a light emitting device having multi-chips according to an embodiment of the present invention.
• a groove 1505 is formed in a mount portion 1501. An external wall of the groove
• the reference numeral 1504 indicates a position where a plurality of LED chips is placed.
• an emitting wavelength of each light emitting device may belong to the same wavelength range representing the same color, or may belong to a different wavelength range representing different colors.
• a mixed color for wavelengths of the LED chips may belong to the same wavelength range representing the same color, or may belong to a different wavelength range representing different colors.
• a light emitting device (LED) package can be simply manufactured in various sizes by using a method in which a substrate bonded with a chip and a cup portion functioning as a reflector are separately formed, and thereafter the two parts are adhered to be integrated as one part.
• a light emitting device having better light emitting efficiency than a smaller sized light emitting device based on a conventional method.
• a light emitting device having better reliability than the conventional one can be realized.
• An optical directivity of the light emitting device can be easily achieved in terms of diversity. Further, it is possible to manufacture and produce a light emitting device with high brightness in a high-variety low- volume manner.
• the light emitting device can be arranged to have a faster operation time, at a low price, in a wider area in comparison with the conventional light emitting device. Accordingly, an LED display and illumination with high brightness and high efficiency can be easily manufactured.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• Led Device Packages (AREA)

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Cited By (7)

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Citations (4)

• 2005
  • 2005-09-12 KR KR1020050084747A patent/KR100702569B1/ko not_active IP Right Cessation
• 2006
  • 2006-09-06 WO PCT/KR2006/003535 patent/WO2007032619A1/en active Application Filing

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