WO2007029414A1 - Capteur de mode de guide d'onde de lumière - Google Patents

Capteur de mode de guide d'onde de lumière Download PDF

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Publication number
WO2007029414A1
WO2007029414A1 PCT/JP2006/313647 JP2006313647W WO2007029414A1 WO 2007029414 A1 WO2007029414 A1 WO 2007029414A1 JP 2006313647 W JP2006313647 W JP 2006313647W WO 2007029414 A1 WO2007029414 A1 WO 2007029414A1
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Prior art keywords
optical waveguide
light
waveguide mode
reflective film
dielectric layer
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PCT/JP2006/313647
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English (en)
Japanese (ja)
Inventor
Makoto Fujimaki
Nobuko Fukuda
Kaoru Tamada
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National Institute Of Advanced Industrial Science And Technology
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Priority to JP2007534274A priority Critical patent/JP4581135B2/ja
Publication of WO2007029414A1 publication Critical patent/WO2007029414A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons

Definitions

  • the present invention relates to an optical waveguide mode sensor capable of increasing detection sensitivity of a sample to be detected by utilizing an optical waveguide mode.
  • a technique using a surface plasmon resonance (SPR) mode as a biosensor such as a protein such as DNA or an antigen antibody, a sugar chain, or a chemical substance sensor such as a metal ion or an organic molecule is known.
  • SPR surface plasmon resonance
  • noble metal gold, silver, etc.
  • an optical prism via refractive index adjusting oil.
  • laser light or white light is applied to the glass through the prism, and the intensity of the reflected light is detected.
  • Incident light is incident on glass under conditions that cause total reflection, and surface plasmon resonance occurs at a certain incident angle by an evanescent wave that leaks to the interface on the surface side of the metal.
  • the evanescent wave is absorbed by the surface plasmon, so that the intensity of the reflected light is remarkably reduced in the vicinity of the incident angle.
  • the incident angle and reflected light intensity at which surface plasmon resonance appears change depending on the thickness of the deposit on the metal surface and the dielectric constant, so the substance that binds to or adsorbs the sample to be detected on the metal surface is modified.
  • the change in the incident angle and the reflectance intensity that occurs when the sample to be detected is bound or adsorbed is detected and converted to the amount of binding (film thickness or mass) of the sample to be detected.
  • a molecular recognition functional film facing the surface of a solution flow channel through which an analyte sample flows a metal thin film provided on the back surface of the molecular recognition functional film, and the metal thin film
  • An optical sensor equipped with a Fourier transform spectrometer using an excitation light source that allows white p-polarized light and parallel light to enter from the side and an interferometer that receives the reflected light that is generated when the incident light is reflected from the surface of the metal thin film It is disclosed (see Patent Document 1).
  • a surface plasmon sensor that focuses the light beam at the interface between the dielectric block and the metal film is also provided.
  • a technology has been disclosed in which a cylindrical lens is provided that collects components with different reflection angles in a line in a direction that continues in one direction. (See Patent Document 2).
  • the conventional technique using the above-described surface plasmon resonance mode has a problem that the sensitivity is insufficient when detecting a sample to be detected having a small size. Therefore, in order to detect a sample to be detected having a small size, a process such as labeling a molecule having a large size or a molecule having a high dielectric constant onto the sample to be detected is required, and the process that is merely inferior in accuracy is complicated. Then there is a disadvantage!
  • Patent Document 1 JP-A-6-58873
  • Patent Document 2 JP 2002-195942
  • the present invention aims to solve the above-mentioned problems, and is a light guide that can detect a sample to be detected with high sensitivity and a smaller size than a conventional technique that uses surface plasmon resonance.
  • An optical waveguide mode sensor of the present invention comprises a transparent dielectric material or transparent conductive material substrate, a reflective film coated thereon, and a dielectric layer formed on the reflective film. Is used.
  • a light incident mechanism that makes light incident on the reflective film from the substrate side of the chip, and a light detection mechanism that detects reflected light of the light reflected by the reflective film, and a part or all of the incident light is A substance to be detected is adsorbed or adhered to the surface of the dielectric layer by using a light incident angle region in which reflected light intensity decreases by coupling with an optical waveguide mode propagating in the optical waveguide made of the dielectric layer. The substance is detected by reading the change in the incident angle or reflected light intensity that occurs during the process.
  • the reflective film is a metal thin film having one or more components selected from metals of groups 4 to 14 of the periodic table of elements or alloys based on these metals.
  • the material of the metal or alloy thin film formed on the substrate is not particularly limited as long as the group 4-14 force of the periodic table of elements is also selected.
  • the adhesion to the substrate is not limited. It is desirable to use high materials Yes.
  • As a means for coating the metal thin film there is no particular limitation as long as it can be applied to the substrate by vapor deposition, sputtering, electroless plating, electroplating, and the like.
  • the reflective film can be a thin film of a semiconductor material.
  • semiconductor material formed on the substrate but considering the stability of the sensor, it is desirable to use a material with high adhesion to the substrate.
  • vapor deposition, sputtering, molecular beam epitaxy (MBE), etc. can be used, and there is no particular limitation as long as it is a means capable of covering a substrate.
  • the optical waveguide mode sensor performs detection using a secondary optical waveguide mode of an optical waveguide made of the dielectric layer.
  • the dielectric layer has a thickness sufficient to develop a second-order optical waveguide mode.
  • the dielectric layer is formed mainly of silicon oxide, polymer based on polymethylmethacrylic acid, metal oxide, metal nitride, oxide of semiconductor material, or nitride of semiconductor material. .
  • a chip having a molecular recognition group chemically modified on the surface of the dielectric layer is used.
  • the optical prism is provided with a structure in which a surface of the substrate opposite to the surface on which the dielectric layer is formed is in close contact with a refractive index adjusting oil.
  • a refractive index adjusting oil is included in the optical waveguide modes that appear when p-polarized light or s-polarized light is incident at an angle with respect to the central axis of the optical prism.
  • the first order generated when the thickness of the dielectric layer is increased.
  • the incident angle is fixed near the incident angle where the coupling between the second-order optical waveguide mode that occurs second and the incident light occurs, and the intensity of the reflected light is detected.
  • the thickness, mass, or dielectric constant of a molecule, ion, or molecular assembly that selectively adsorbs or chemically binds to a molecular recognition group chemically modified on the surface of the dielectric layer in a gas or liquid. taking measurement.
  • the optical waveguide mode sensor chip of the present invention is used for an optical waveguide mode sensor. Then, a reflective film is coated on the substrate, and a dielectric optical waveguide is provided on the reflective film.
  • the reflective film is a thin film of one or more components selected from metals of groups 4 to 14 of the periodic table of elements or alloys based on these metals.
  • the material of the metal or alloy thin film to be formed on the substrate is not particularly limited as long as the group 4-14 force of the periodic table of elements is also selected, but considering the stability of the sensor, the adhesion to the substrate is not limited. It is desirable to use a material having high properties.
  • the reflective film is a thin film of a semiconductor material.
  • the semiconductor material to be formed on the substrate is not particularly limited. Considering the stability of the force sensor, it is desirable to use a material with high adhesion to the substrate. Vapor deposition, sputtering, molecular beam epitaxy (MBE), etc. can be used as means for coating a thin film of semiconductor material, and any means can be used as long as it can coat a substrate.
  • the present invention it is possible to detect a detected sample of a small size with higher sensitivity and label-free than the conventional technique using surface plasmon resonance.
  • a metal or semiconductor material having high adhesion to the substrate as the reflective film a stable sensor with high long-term reliability can be provided.
  • the use of the secondary optical waveguide mode has an excellent effect that the detection sensitivity of the sample to be detected can be increased. Compared to the conventional technique using surface plasmon resonance, it has a remarkable effect that a sample to be detected can be detected with high sensitivity and a small size without using a label.
  • FIG. 1 is a diagram showing a chip structure that exhibits an optical waveguide mode.
  • FIG. 2 is an explanatory diagram showing an example of an optical arrangement for inducing an optical waveguide mode.
  • FIG. 3 is a diagram illustrating a configuration example of an optical waveguide mode sensor.
  • FIG. 4 A diagram showing how the film thickness and mode are manifested when silicon oxide is used in an optical waveguide.
  • FIG. 5 is a diagram showing how the film thickness and mode are manifested when silicon oxide is used for the optical waveguide.
  • FIG. 6 is a diagram showing a result of calculating an estimation of a change in reflectance (oxide silicon 760) using Fresnel's equation.
  • FIG. 8 is a graph showing the incident angle dependence of the reflected light intensity in this example.
  • FIG. 10 is a graph showing changes in reflected light intensity due to specific adsorption of streptavidin in the present example.
  • FIG. 11 is a graph showing changes in reflected light intensity characteristics in the second-order optical waveguide mode due to adsorption of streptavidin in the present example.
  • FIG. 16 is a diagram showing a dip due to coupling with a second-order waveguide mode when silicon is used for the reflection film, and the relationship between the reflectance change amount and the incident angle.
  • FIG. 17 is a diagram when the conditions are different from those in FIG.
  • FIG. 18 is a diagram showing a dip due to coupling with the second-order waveguide mode when copper is used for the reflective film, and the relationship between the reflectivity change amount and the incident angle.
  • FIG. 19 is a diagram when the conditions are different from those in FIG.
  • FIG. 20 is a diagram when the conditions are different from those in FIGS. 18 and 19.
  • FIG. 21 is a diagram showing a dip due to coupling with a second-order waveguide mode when chromium is used for the reflective film, and the relationship between the reflectance change amount and the incident angle.
  • FIG. 22 is a diagram showing the dip due to coupling with the second-order waveguide mode when tantalum is used for the reflective film, and the relationship between the reflectance change amount and the incident angle.
  • the present invention uses an optical waveguide mode in order to improve sensitivity.
  • a chip as shown in FIG. 1 is used.
  • This chip is composed of a glass substrate, a reflective film coated thereon, and a dielectric layer formed on the reflective film.
  • This dielectric layer becomes an optical waveguide, and part or all of the incident light is propagated in the optical waveguide made of this dielectric layer under specific conditions.
  • Figure 2 shows such an example.
  • a transparent dielectric material such as plastic (grease), ceramics, insulator, etc., or ITO, etc.
  • the transparent conductor material can be used.
  • FIG. 2 shows the relationship between the incident angle of light and the intensity of reflected light when a prism is arranged on the glass side of the chip of FIG. 1 and light is incident thereon.
  • a prism is arranged on the glass side of the chip of FIG. 1 and light is incident thereon.
  • the dip of the reflected light intensity is due to this surface plasmon resonance.
  • Surface plasmon resonance is a phenomenon that occurs when a metal with a negative dielectric constant, especially a noble metal, is used as the reflective film, and is a phenomenon that occurs even without the dielectric optical waveguide shown in Fig. 1. Also, the decrease in reflected light due to this surface plasmon resonance does not occur in the case of incident light power 3 ⁇ 4 polarized light!
  • Another decrease in reflected light intensity is caused by the optical waveguide mode.
  • the dielectric layer shown in 1 that is, the dielectric optical waveguide is absent or thin.
  • the minimum thickness of the dielectric layer where the light wave mode is generated varies depending on the polarization state of the light used, but in general, the higher the refractive index of the dielectric layer, the thinner the wavelength of light that is acceptable. It's fine.
  • a thick dielectric layer is required when the refractive index of the dielectric is low or when the wavelength of light used is long.
  • the thickness of the dielectric layer when using a light with a refractive index of 1.457 and a wavelength of 633 nm, the thickness of the dielectric layer must be at least about lOOnm in the case of light polarization, and about 200 nm or more in the case of p polarization. Thickness is necessary.
  • a phenomenon in which the intensity of reflected light suddenly decreases at a specific incident angle resulting from the optical waveguide mode, that is, a dip occurs, is used to adsorb and contact molecules on the surface of the dielectric optical waveguide layer. , Detect binding.
  • the optical waveguide mode is a state where light is confined and propagated in a certain finite space.
  • the most well-known optical waveguide mode is the propagation state of light in an optical fiber.
  • An optical fiber forms a high refractive index part (usually called a core) at the center of a fiber-like (usually very long cylindrical) material with a low refractive index, and reflection of light caused by this refractive index difference The light is confined in the core and propagated.
  • a slab type optical waveguide in which light propagates through a plate-like material sandwiched between substances having a low refractive index (including air and vacuum conditions) is also well known.
  • the structure of the chip used in the present invention is formed by forming a reflective film on a glass serving as a substrate, and further forming a dielectric layer thereon.
  • the upper (surface side) force of this dielectric layer When touching a material with a lower refractive index than this dielectric, such as air or water, this dielectric layer has a structure similar to that of a slab waveguide. Light can be confined and propagated in the body layer. Thus, the state force in which light is confined and propagated in the dielectric layer is the optical waveguide mode in this case.
  • the number of optical waveguide modes increases or decreases depending on the wavelength of propagating light, the plane of polarization, and the thickness of the film to be a dielectric optical waveguide.
  • the optical waveguide mode does not occur.
  • the optical waveguide mode is generated.
  • the first optical waveguide mode is generated as the primary optical waveguide mode, and when the film thickness is increased further, the next optical waveguide mode is generated. This is called a secondary optical waveguide mode.
  • the number of third- and fourth-order waveguide modes increases.
  • the optical waveguide mode sensor of the present invention has a dielectric layer added to the surface of the reflective film.
  • the optical side modes of the optical waveguide (dielectric optical waveguide) by this dielectric layer and the incident light are incident under specific conditions. Bonding occurs. That is, incident light becomes an optical waveguide mode. Due to the coupling between this optical waveguide mode and the incident light, a part or all of the incident light is propagated in the dielectric optical waveguide.
  • the reflected light intensity decreases.
  • the decrease in light intensity reflected by the reflective film is detected by the detector.
  • two polarizing plates are often used. Of the two polarizing plates, the polarizing plate closer to the prism is p-polarized light or perpendicular to the reflecting surface. It is installed to select s-polarized light.
  • the polarizing plate closer to the laser light source is installed to adjust the intensity of light incident on the optical waveguide.
  • any prism such as a cylindrical prism or a hemispherical prism can be used as the optical prism.
  • the optical waveguide mode can be developed without using an optical prism. The optical prism functions to change the incident angle of light at which coupling between the optical waveguide mode and incident light occurs.
  • FIG. 3 shows a configuration example of an optical waveguide mode sensor system, which normally includes a laser light source, a polarizer, a goometer, a photodetector, and analysis software.
  • a combination of a liquid cell, a chip, and a prism is placed on a gometer for incident angle control, and p- or s-polarized laser light is incident on the prism side through a polarizing plate. The reflected light is captured by the photodetector.
  • the liquid cell is used to hold the sample solution on the molecular detection surface of the chip, that is, the surface of the dielectric layer.
  • Choppers and lock-in amplifiers are sometimes used to suppress noise from outside light (such as room light) other than laser light.
  • the glass used for the substrate preferably has a refractive index power of about 1.4 to 2.2 for light used for detection, and more preferably about 1.6 to 2.0.
  • the dielectric optical waveguide can be basically any material as long as it is transparent to the light used for detection.
  • silicon oxide is used for this dielectric optical waveguide, it can be easily deposited on the reflective film, an optically smooth surface can be obtained, and it is inactive against biological materials.
  • it since it has a feature that chemical modification of the surface is easy, it can be said to be a preferable material.
  • a sol-gel method, a thermal oxidation method, a sputtering method, or the like can be used as a method for depositing the silicon oxide.
  • a polymer material for example, a polymer formed mainly of polymethylmethacrylic acid One of them has the same effect as that of silicon oxide and can be said to be a desirable material.
  • a highly transparent dielectric material such as a nitride of a semiconductor material such as silicon nitride, a metal oxide such as titanium oxide, and a metal nitride such as aluminum nitride is a preferable material.
  • the light used for detection is basically not particularly limited as long as it is an electromagnetic wave, but it is desirable to use light in the infrared to ultraviolet region because it is easy to handle.
  • any material can be used for the reflective film as long as it is a chemically and physically stable metal thin film or a semiconductor material thin film. Therefore, as a metal material, the periodic table of elements
  • the semiconductor material may be a compound semiconductor composed of two or more elements other than a semiconductor composed of one element such as Si or Ge.
  • the semiconductor may be any of p-type, n-type, and intrinsic semiconductor.
  • P polarization and s polarization in the polarization state of light. In this sensor, in FIG. 2, light whose electric field oscillation direction is perpendicular to the y direction is P-polarized light, and light whose electric field vibration direction is horizontal to the y direction is s-polarized light.
  • This sensor sets the incident angle of light in the vicinity of ⁇ a when the incident light angle ⁇ a is the angle at which the reflected light intensity decreases significantly due to the coupling between incident light and the optical waveguide mode.
  • the substance is detected by reading the change in the incident angle ⁇ a and the change in the reflected light intensity that occur when the substance to be detected is adsorbed or adhered to the surface of the film.
  • ⁇ a is an angle such as 0, ⁇ , 0 shown in FIG. Therefore, the intensity of reflected light around 0 a
  • the degree of decrease the better the sensitivity of the sensor as soon as the change in ⁇ a or the change in reflected light intensity is read. For this reason, if the reflected light intensity during total reflection is 1, the degree of change in reflected light intensity at an angle 0 a, that is, the reduction amount AR of the reflectance near the angle ⁇ a is preferably at least 0.1 or more. Moreover, it is more desirable that it is about 0.3 or more.
  • the reflected light intensity generally decreases, and the phenomenon that the reflected light intensity significantly decreases at a specific incident angle does not appear clearly. Such a decrease in measurement sensitivity depends on the refractive index n and the attenuation coefficient k of the material used as the reflective film.
  • Fig. 12 shows the range
  • Fig. 13 shows the range of n and k for which high sensitivity cannot be expected for s-polarized light. Therefore, it is desirable to use a material with n and k outside this region as the reflective film.
  • n and k of a substance vary depending on the wavelength of light. Therefore, even with the same material, the sensitivity may increase or decrease depending on the light used for detection. For example, when p-polarized light is used and silver is used for the reflection film, n and k are 0.173 and 1.95, respectively, when the wavelength of light is 400 nm. Therefore, it is outside the region where high sensitivity shown in FIG. 12 cannot be expected. On the other hand, when the wavelength of light is 300 nm, n and k are 1.522 and 0.992, respectively, and are in the region where high sensitivity shown in Fig. 12 cannot be expected.
  • Figure 14 shows the result of calculating the relationship between the reflected light intensity and the incident angle in the case of silver using the Fresnel equation based on Fresnel's law.
  • the incident light is p-polarized light, and as shown in Fig. 2, it was incident through a triangular prism with a vertex of 90 °, and the refractive index of glass was calculated as 1.8.
  • the refractive index and thickness of the dielectric optical waveguide film and the thickness of the silver thin film were 1.488, 600 nm, and 17 nm for light with a wavelength of 300 nm, and 1.470, 750 nm, and 33 nm for wavelength 400 nm, respectively.
  • the surface of the dielectric optical waveguide is immersed in water.
  • a sharp dip is observed at a wavelength of 400 nm, and high sensitivity can be expected, but at a wavelength of 300 nm, the dip is shallow and the width is wide. Sensitivity cannot be expected.
  • the region force k for which high sensitivity cannot be expected is closer to the region side where the sensitivity is small.
  • metals have a large k in the infrared to ultraviolet region, so most metals can be used as a reflective film when p-polarized light is used.
  • s-polarized light is used, as shown in Fig. 13, the region where high sensitivity cannot be expected extends to the region where k is large. Therefore, when s-polarized light is used, usable materials are limited.
  • the width of the dip may be narrower when using s-polarized light than when using p-polarized light.
  • FIG. 15 shows a case in which light with a wavelength of 633 nm is used to form a 31-thick Cu film as a reflective film on a glass with a refractive index of 1.8, and 1.1 ⁇ m thick silicon oxide (refractive index of 1.457). It is a simulation result at the time of forming. Again, as shown in Fig. 2, the incident light is incident through a triangular prism with a vertex of 90 °, and the surface of the dielectric optical waveguide is immersed in water. Figure 15 shows the simulation result for dotted force ⁇ polarization. The solid line force is a simulation result for polarized light.
  • the dip width is narrower when s-polarized light is used.
  • the amount of change in the angle at which the dip occurs is about the same for both s-polarized light and p-polarized light. Force Sensitivity is improved.
  • the thickness of the reflective film also greatly affects the depth and width of the dip, it is necessary to select an optimum value. For example, if the reflective film is too thick, the light will not reach the optical waveguide and dip will not appear.
  • other properties of the reflective film such as temperature stability and adhesion to glass, are also important. When using a material that is difficult to adhere to glass, for example, when gold or silver is used as a reflective film, it is effective to sandwich an adhesive layer such as Cr in order to improve the adhesion to glass.
  • Figure 4 p-polarized light
  • Figure 5 s-polarized light
  • glass with a refractive index of 1.846 and gold with a thickness of 47 nm were used as the reflection film, and the irradiation light wavelength was 633.
  • the surface of the dielectric layer is assumed to be immersed in a phosphate buffer solution (PBS buffer solution).
  • PBS buffer solution phosphate buffer solution
  • FIG. 6 shows an estimate of the amount of change in reflectance expected when a substance is adsorbed on the surface of an optical waveguide formed of silicon oxide (oxide silicon 760). This assumes that a protein with a refractive index of 1.45 is adsorbed at a film thickness of 5 in a phosphate buffer.
  • Fig. 6 uses the conventional surface plasmon resonance (SPR) mode dip, and the right side shows the s-polarization coupled with the second-order optical waveguide mode.
  • SPR surface plasmon resonance
  • a maximum change of 0.15 is expected, whereas when a dip due to coupling of s-polarized light with the second-order optical waveguide mode is used, a maximum change of 0.62 is expected.
  • the Therefore, high sensitivity can be expected by using the optical waveguide mode.
  • the dip due to coupling with the optical waveguide mode is characterized in that the range of the incident angle where the reflected light intensity decreases, that is, the width of the dip, is very narrow compared to the case of surface plasmon resonance. Therefore, when the sample to be detected is adsorbed or bonded to the surface of the optical waveguide, the incident angle at which the reflected light intensity decreases greatly changes.
  • the amount of change in reflectivity obtained when the incident angle is fixed at the angle at which dip occurs due to coupling with the second-order optical waveguide mode is compared to the case where surface plasmon resonance is used. Theoretically, it is about 4 times larger. Therefore, it is possible to detect a sample to be detected with a high sensitivity and a smaller size than conventional techniques using surface plasmon resonance without labeling.
  • the dip due to the coupling with the second-order optical waveguide mode has a wider incident angle range in which the reflected light intensity decreases than the dip due to the coupling with the first-order optical waveguide mode.
  • the half-value width in the first-order optical waveguide mode is 0.03 °, whereas it is estimated to be 0.08 ° in the second-order optical waveguide mode. Therefore, the second-order optical waveguide mode has the remarkable feature that the incident angle can be controlled more easily than the first-order optical waveguide mode.
  • vacuum 5 nm
  • gold 47 nm
  • chromium 5 nm
  • a chip was produced by sputtering.
  • the chromium used here was used to improve the bond strength between gold and glass.
  • a chip is mounted on the liquid cell so that the sputtered optical waveguide surface is in contact with the 1 / 15M phosphate buffer, and the surface opposite to the optical waveguide surface is adhered to the optical prism via refractive index adjusting oil. It was. This was mounted on a gometer for controlling the incident angle, and an s-polarized helium-neon laser (633 nm) was applied to the chip through an optical prism.
  • the reflected light intensity was detected with a photodiode through a condenser lens.
  • the reflected light intensity was measured while changing the incident angle from 45 ° to 60 °.
  • the primary optical waveguide mode was around 57 ° and the secondary optical waveguide was around 48 °. A dip due to coupling with the mode was detected.
  • the chip was immersed in a weak alkaline aqueous solution for 1 hour and then dried, and then immersed in an ethanol solution of 0.2 wt.% 3-aminopropyltriethoxysilane for 2 hours to modify reactive amino groups on the silicon oxide surface. .
  • 1/15 M phosphate buffer containing 0.1 mM sulfosuccinimidyl-N- (D-piotul) -6-aminohexanate was injected into the liquid cell.
  • FIG. 9 is an explanatory diagram of the biochemical modification to the silicon oxide surface.
  • a hydroxyl group one OH appears on the surface of the silicon oxide (shown as SiO in the figure), which is an optical waveguide.
  • an amino group (one NH 3) that is an active group can be easily modified on the surface of the acid silicon.
  • a solution in which a piotin compound having a succinimide group is dissolved in a phosphate buffer PH7.4
  • a chip modified with a heamino group By immersing a chip modified with a heamino group in the liquid, it is possible to easily modify the piotin that specifically recognizes the protein (streptavidin), thereby creating a useful value as a biosensor.
  • the incident light angle was fixed at 47.79 °, and the reflected light intensity was increased while injecting a 1 / 15M phosphate buffer containing 1 ⁇ of streptavidin that specifically adsorbs to the piotinyl group into the liquid cell. It was measured. As shown in Fig. 10, the reflected light intensity increased significantly immediately after injection and became almost constant in about 20 minutes.
  • the observed change in reflectance was 0.448.
  • Fig. 11 when the reflected light intensity was measured while changing the incident angle from 45 ° to 60 °, the film thickness increased due to the adsorption of streptavidin. The incident angle at which the dip due to the coupling appears shifts to the high angle side. At this time, in the case of the second-order optical waveguide mode, the angle at which the reflected light intensity was minimized shifted to the 0.08 ° higher angle side after the introduction of the piochul group.
  • the silicon reflective film had a thickness of 30 °
  • the incident light wavelength was 633 nm
  • the optical waveguide layer had a refractive index of 1.457
  • a thickness of 1080 nm The incident light is s-polarized light, and a dip by coupling with the second-order guided mode is used. It was.
  • the left figure in Fig. 16 shows the dip due to the coupling with the second-order guided mode.
  • the right figure in Fig. 16 shows the relationship between the change in reflectivity and the incident angle when a substance with a refractive index of 1.45 and a thickness of 5 nm is adsorbed on the surface of the dielectric optical waveguide. It can be seen that a change (decrease) in reflectance of 0.26 at maximum can be expected.
  • a calculation result is shown in the case of using a silica glass having a copper reflection film thickness of 31 nm, an incident light wavelength of 826.5 nm, and an optical waveguide layer having a refractive index of 1.452 and a thickness of 1400 nm.
  • the incident light is s-polarized light, and a dip by coupling with the second-order guided mode is used.
  • the left figure in Fig. 19 shows the dip due to the coupling with this guided mode.
  • the right figure in Fig. 19 shows the relationship between the change in reflectivity and the incident angle when a substance with a refractive index of 1.45 thickness is adsorbed on the surface of the dielectric optical waveguide.
  • FIGS. 19 and 20 it can be seen that a very large change in reflectance can be obtained by using copper for the reflective film and using s-polarized light. Copper has better adhesion to glass materials than gold and silver. Therefore, a stable and highly sensitive sensor can be obtained.
  • a case where chromium is used for the reflective film is shown.
  • the calculation was performed assuming that the chromium reflective film has a thickness of 10 mm, the wavelength of incident light is 300 nm, the optical waveguide layer has a refractive index of 1.488, and a thickness of 300 nm.
  • the incident light was s-polarized light, and a dip by coupling with the first-order guided mode was used.
  • the left figure in Fig. 21 shows the dip due to the coupling with this guided mode.
  • the right figure in Fig. 21 shows the relationship between the change in reflectivity and the incident angle when a substance with a refractive index of 1.45 and a thickness of 5 nm is adsorbed on the surface of the dielectric optical waveguide.
  • the film thickness of the tantalum reflective film was 22 nm
  • the wavelength of incident light was 1000 nm
  • the optical waveguide layer was calculated as silica glass with a refractive index of 1.45 and a thickness of lOOOnm.
  • the incident light was s-polarized light, and a dip by coupling with the first-order guided mode was used.
  • the left figure of FIG. 22 shows the dip due to the coupling with the waveguide mode.
  • the right figure in Fig. 22 shows the relationship between the change in reflectivity and the incident angle when a substance with a refractive index of 1.45 thickness is adsorbed on the surface of the dielectric optical waveguide. It can be seen that a change in reflectance (increased calorie) of up to 0.21 can be expected.
  • both the sensitivity as a sensor and the adhesion of the reflective film are good.
  • using a long-wavelength light source has the advantage of reducing damage to molecules when observing biomolecules.
  • the present invention has an excellent effect that it is possible to increase the detection sensitivity of the sample to be detected by using the optical waveguide mode, and than the conventional technology using surface plasmon resonance, It has a remarkable effect that it can detect a sample with high sensitivity and small size without using a label.
  • DNA, antigen-proteins such as antibodies, sugar sensors such as sugar chains, metal ions, organic molecules Applicable to chemical sensors such as It can be used in fields such as medicine, drug discovery, food, and environment.
  • the refractive index, dielectric constant, thickness, etc. of this thin film can be measured, so it can also be used as a sensor for thin film materials and as a measuring instrument for measuring the characteristics of thin film materials. Can be used.

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  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

La présente invention se rapporte à une puce qui comprend un verre, un film réfléchissant recouvrant le verre et une couche diélectrique formée sur le film réfléchissant. Un capteur du mode de guide d'onde de lumière comprend un mécanisme de direction de la lumière qui introduit la lumière sur le film réfléchissant depuis le côté du verre de la puce et un mécanisme de détection de la lumière qui détecte la lumière réfléchie par le film réfléchissant. En employant une région à angle incident de lumière dans laquelle l'intensité de la lumière réfléchie diminue en associant tout ou partie de la lumière incidente 0 un mode de guide d'onde de lumière se propageant dans un parcours de guide d'onde de lumière formé par une couche diélectrique, il est possible de lire la variation de l'angle incident ou l'intensité de la lumière réfléchie qui survient lorsqu'une substance à détecter est adsorbée ou attachée sur la surface de la couche diélectrique, pour ainsi détecter la substance.
PCT/JP2006/313647 2005-09-06 2006-07-10 Capteur de mode de guide d'onde de lumière WO2007029414A1 (fr)

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JP2008286778A (ja) * 2007-04-16 2008-11-27 National Institute Of Advanced Industrial & Technology 周期構造を有するマイクロプレートおよびそれを用いた表面プラズモン励起増強蛍光顕微鏡または蛍光マイクロプレートリーダー
WO2009041195A1 (fr) * 2007-09-28 2009-04-02 National Institute Of Advanced Industrial Science And Technology Capteur à mode de guide d'ondes optiques utilisant un film d'oxyde et son procédé de fabrication
JP2010508527A (ja) * 2006-11-03 2010-03-18 コミサリア、ア、レネルジ、アトミク−セーエーアー プラズモン共鳴センサのための改良型光学的検出機構
JP2010066252A (ja) * 2008-08-13 2010-03-25 Kobe Steel Ltd 超音波顕微鏡
WO2010087088A1 (fr) * 2009-01-30 2010-08-05 独立行政法人産業技術総合研究所 Détecteur d'échantillon et procédé de détection d'échantillon
JPWO2011155179A1 (ja) * 2010-06-10 2013-08-01 コニカミノルタ株式会社 分析素子チップ
WO2014003529A2 (fr) * 2012-06-28 2014-01-03 Moroccan Foundation For Advanced Science, Innovation & Research (Mascir) Design d'un capteur à haute performance à base de modes optiques guides dans une micro puce à structure periodique de milieux dielectriques
US8937721B2 (en) 2011-01-20 2015-01-20 National Institute Of Advanced Industrial Science And Technology Sensing device
JP2017219512A (ja) * 2016-06-10 2017-12-14 国立研究開発法人産業技術総合研究所 光学的測定方法及び測定装置
CN108132232A (zh) * 2017-12-28 2018-06-08 中国地质大学（武汉） 一种表面等离子体共振传感器
CN108613949A (zh) * 2018-07-30 2018-10-02 兰州理工大学 基于非对称金属包覆介质波导的角度扫描折射率传感器
JP2018179785A (ja) * 2017-04-14 2018-11-15 国立研究開発法人産業技術総合研究所 目的物質検出チップ、目的物質検出装置及び目的物質検出方法
CN111257288A (zh) * 2020-03-30 2020-06-09 京东方科技集团股份有限公司 浓度检测传感器及其检测方法、浓度检测装置
US10768112B2 (en) 2016-07-12 2020-09-08 National Institute Of Advanced Industrial Science And Technology Optical detection device and optical detection method
CN116008200A (zh) * 2023-02-02 2023-04-25 深圳大学 一种光学传感器
WO2023189138A1 (fr) * 2022-03-30 2023-10-05 京セラ株式会社 Dispositifs optiques et biocapteur

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WO2013011831A1 (fr) 2011-07-15 2013-01-24 独立行政法人産業技術総合研究所 Puce de détection de substance cible, plaque de détection de substance cible, dispositif de détection de substance cible et procédé de détection de substance cible
MX2022006341A (es) * 2019-12-09 2022-06-23 Claudio Oliveira Egalon Sistemas y metodos de iluminacion lateral de guias de ondas.

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JP2002505425A (ja) * 1998-02-24 2002-02-19 ザ・ユニバーシティ・オブ・マンチェスター・インスティテュート・オブ・サイエンス・アンド・テクノロジー 導波路構造
JP2004117298A (ja) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd 全反射減衰を利用した測定方法および測定装置
JP2005098997A (ja) * 2003-09-02 2005-04-14 Fuji Photo Film Co Ltd 測定装置およびセンサーユニット

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JP2005128419A (ja) * 2003-10-27 2005-05-19 Nec Corp 光導波路構造およびその作製方法

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JP2002505425A (ja) * 1998-02-24 2002-02-19 ザ・ユニバーシティ・オブ・マンチェスター・インスティテュート・オブ・サイエンス・アンド・テクノロジー 導波路構造
JP2004117298A (ja) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd 全反射減衰を利用した測定方法および測定装置
JP2005098997A (ja) * 2003-09-02 2005-04-14 Fuji Photo Film Co Ltd 測定装置およびセンサーユニット

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010508527A (ja) * 2006-11-03 2010-03-18 コミサリア、ア、レネルジ、アトミク−セーエーアー プラズモン共鳴センサのための改良型光学的検出機構
JP2014081385A (ja) * 2007-04-16 2014-05-08 National Institute Of Advanced Industrial & Technology 周期構造を有するマイクロプレートおよびそれを用いた表面プラズモン励起増強蛍光顕微鏡または蛍光マイクロプレートリーダー、並びに検出方法
JP2008286778A (ja) * 2007-04-16 2008-11-27 National Institute Of Advanced Industrial & Technology 周期構造を有するマイクロプレートおよびそれを用いた表面プラズモン励起増強蛍光顕微鏡または蛍光マイクロプレートリーダー
WO2009041195A1 (fr) * 2007-09-28 2009-04-02 National Institute Of Advanced Industrial Science And Technology Capteur à mode de guide d'ondes optiques utilisant un film d'oxyde et son procédé de fabrication
JP2009085714A (ja) * 2007-09-28 2009-04-23 National Institute Of Advanced Industrial & Technology 酸化膜を用いた光導波モードセンサー及びその製造方法
JP2010066252A (ja) * 2008-08-13 2010-03-25 Kobe Steel Ltd 超音波顕微鏡
WO2010087088A1 (fr) * 2009-01-30 2010-08-05 独立行政法人産業技術総合研究所 Détecteur d'échantillon et procédé de détection d'échantillon
JP5182900B2 (ja) * 2009-01-30 2013-04-17 独立行政法人産業技術総合研究所 検体検出センサー及び検体検出方法
JPWO2011155179A1 (ja) * 2010-06-10 2013-08-01 コニカミノルタ株式会社 分析素子チップ
US8937721B2 (en) 2011-01-20 2015-01-20 National Institute Of Advanced Industrial Science And Technology Sensing device
WO2014003529A2 (fr) * 2012-06-28 2014-01-03 Moroccan Foundation For Advanced Science, Innovation & Research (Mascir) Design d'un capteur à haute performance à base de modes optiques guides dans une micro puce à structure periodique de milieux dielectriques
WO2014003529A3 (fr) * 2012-06-28 2014-02-27 Moroccan Foundation For Advanced Science, Innovation & Research (Mascir) Design d'un capteur à haute performance à base de modes optiques guides dans une micro puce à structure periodique de milieux dielectriques
JP2017219512A (ja) * 2016-06-10 2017-12-14 国立研究開発法人産業技術総合研究所 光学的測定方法及び測定装置
US10768112B2 (en) 2016-07-12 2020-09-08 National Institute Of Advanced Industrial Science And Technology Optical detection device and optical detection method
JP2018179785A (ja) * 2017-04-14 2018-11-15 国立研究開発法人産業技術総合研究所 目的物質検出チップ、目的物質検出装置及び目的物質検出方法
CN108132232A (zh) * 2017-12-28 2018-06-08 中国地质大学（武汉） 一种表面等离子体共振传感器
CN108613949A (zh) * 2018-07-30 2018-10-02 兰州理工大学 基于非对称金属包覆介质波导的角度扫描折射率传感器
CN108613949B (zh) * 2018-07-30 2023-11-17 兰州理工大学 基于非对称金属包覆介质波导的角度扫描折射率传感器
CN111257288A (zh) * 2020-03-30 2020-06-09 京东方科技集团股份有限公司 浓度检测传感器及其检测方法、浓度检测装置
WO2023189138A1 (fr) * 2022-03-30 2023-10-05 京セラ株式会社 Dispositifs optiques et biocapteur
CN116008200A (zh) * 2023-02-02 2023-04-25 深圳大学 一种光学传感器

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