WO2007004106A1 - Dispositif luminescent - Google Patents

Dispositif luminescent Download PDF

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Publication number
WO2007004106A1
WO2007004106A1 PCT/IB2006/052079 IB2006052079W WO2007004106A1 WO 2007004106 A1 WO2007004106 A1 WO 2007004106A1 IB 2006052079 W IB2006052079 W IB 2006052079W WO 2007004106 A1 WO2007004106 A1 WO 2007004106A1
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WO
WIPO (PCT)
Prior art keywords
light
layer
emitting device
transparent
semi
Prior art date
Application number
PCT/IB2006/052079
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English (en)
Inventor
Frank A. Van Abeelen
Oscar H. Willemsen
Marc W. G. Ponjee
Johannes F. M. Cillessen
Johannes J. W. M. Rosink
Nijs C. Van Der Vaart
Herbert Lifka
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Publication of WO2007004106A1 publication Critical patent/WO2007004106A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8793—Arrangements for polarized light emission

Definitions

  • the invention relates to a light-emitting device comprising a light emissive layer arranged between an at least semi-transparent first electrode layer and an at least semi- reflective second electrode layer.
  • Light-emitting devices such as display panels, back lights for display panels and light sources for illumination purposes, have seen considerable technological developments in recent years.
  • One of these developments relates to the use of microcavity effects, wherein a resonant cavity is formed between a first and a second reflective layer, at least one of which is semi-transparent, and comprises a light emitting layer arranged between these reflective layers.
  • the microcavity effect is caused by coherent interference effects in the very small resonant cavity formed between the first and second reflective layers.
  • Microcavity effects can be used to increase the external light efficiency of the display device and to obtain an improved colour purity.
  • EP-A-I 154 676 discloses an organic electroluminescent device having a first electrode of a light reflective material, an organic layer including an organic light emitting layer, a semitransparent reflection layer, and a second electrode of a transparent material which are stacked sequentially and so configured that the organic layer functions as a cavity portion of a cavity structure.
  • ⁇ designates the phase shift for light reflected by opposite ends of the cavity portion
  • L is the optical path length of the cavity portion
  • ⁇ is the peak wavelength of the spectrum of part of light to be extracted.
  • a drawback of the prior art microcavity display device is that optimisation of the microcavity effect in the light-emitting device may disturb the electrical properties of the device, in particular the delicate balance between electron and hole currents within the organic layers. It is an object of the invention to provide a light-emitting device that may employ microcavity effects with a reduced or eliminated impact on the electrical properties of the light-emitting device.
  • a light-emitting device comprising a light emissive layer arranged between an at least semi-transparent first electrode layer and an at least semi-reflective second electrode layer, wherein said at least semi-transparent first electrode layer is arranged between said light emissive layer and a further at least semi- reflective layer and wherein said further at least semi-reflective layer is separated from said at least semi-transparent first electrode layer by one or more light transparent intermediate layers.
  • a microcavity can be formed between the at least semi-reflective second electrode layer and the further at least semi-reflective layer.
  • a first microcavity can be formed between the at least semi-reflective second electrode layer and the partly reflective first electrode layer and a second microcavity can be formed between the partly reflective first electrode layer and the further at least semi-reflective layer.
  • the invention can be advantageously applied in display devices defined in claim 2, wherein the at least semi-transparent first electrode layer is an at least semi- transparent anode layers, improving the processability of the light-emitting devices.
  • the invention is advantageously being applied in top-emission devices defined in claim 3.
  • the embodiment of the invention as defined in claim 4 has the advantage that a separate at least semi-reflective layer can be omitted.
  • an at least semi-reflective layer or layer stack generally would have a reflectivity exceeding 10% of the incident light.
  • a semi-transparent layer should generally be understood as a layer or stack of layers having a transparency of at least 10%, preferably at least 20% and more preferably at least 50%.
  • a substantially light reflective layer or layer stack would generally have a reflectivity of over 60%, preferably over 70% and more preferably over 80% or 90% of the incident light.
  • the embodiment of the invention as defined in claim 5 allows the formation of a first microcavity between the first electrode layer and the second electrode layer and a second microcavity between the first electrode layer and the reflective layer.
  • the layers of the stack of intermediate layers can be designed with specific optical and/or physical-chemical properties.
  • the stack could have planarizing properties or provide a chemical barrier in between a metallic reflector and subsequent layers.
  • the optical properties of the multi layer stack can be such that the emitted light intensity and/or colour purity of emitted light is optimised and/or the angular distribution of the light-output is optimised.
  • the optical properties can be chosen to minimise reflection of ambient light from the microcavity to improve the daylight contrast of a display.
  • outcoupling structures as defined in claim 10 may be included in the stack to enhance outcoupling of light that would otherwise be subject to waveguiding.
  • a particularly advantageous embodiment of the invention is defined in claim 7.
  • An intermediate light transparent layer with a high index of refraction has been found to reduce the colour shift ⁇ c as a function of the viewing angle to the light-emitting device, i.e. a reduced change of the chromaticity coordinates of emitted light with viewing angle.
  • the intermediate layers comprise a further layer as defined in claim 8 with the function of a transparent tuning layer. Variation of the thickness of the layers with different refractive indices enables tuning of the effective reflection from the microcavity.
  • the reflection can even be made higher than for a microcavity without the light transparent intermediate layer(s) of the invention.
  • the intermediate light transparent layer comprises a birefringent layer as defined in claim 9. This embodiment allows the light- emitting device to emit partly polarized light which is advantageous for several applications.
  • a further at least semi-reflective layer as defined in claim 11 is applied.
  • the semi-reflective layer can be used for electrically shunting either one of these electrode layers or other current carrying lines such as power lines of an active matrix display.
  • the light-emitting device is constructed as defined in claim 12.
  • the charge carrying injection layer can be applied in a printing process, thickness variations of this layer are obtained relatively easily.
  • the light emissive layer is typically printed as well, the thickness range in which light is effectively emitted is limited.
  • Figs. IA- IH schematically show various embodiments of layer stacks of light- emitting devices according to the invention.
  • Figs. 2 A and 2B show simulation results for the devices of Fig. IA with respectively a transparent and a semi-transparent first electrode layer displaying the influence on the light emission intensity as a function of the wavelength of the emitted light and the thickness of the intermediate light transparent layer for various viewing angles;
  • Fig. 3 shows a spectral characteristic illustrating the colour shift of a conventional light-emitting device
  • Fig. 4 shows a further embodiment of a layer stack of a light-emitting device according to the invention
  • Fig. 5 illustrates a cross-section of an intermediate birefringent light transparent layer for a light-emitting device according to the invention
  • Figs. 6A-6C schematically show applications of light-emitting devices according to the invention.
  • Figs. IA- IH schematically show various embodiments of layer stacks of light- emitting devices 1 according to the invention.
  • a viewing angle ⁇ is indicated.
  • EP-A-I 154 676 For a physical description of microcavity effects, reference is made to EP-A-I 154 676.
  • a light-emissive layer or layer stack E which is typically a stack of organic layers, is arranged between a first electrode layer A 5 C and a second layer electrode layer C 5 A.
  • Light may be emitted from the devices 1 by providing appropriate signals to at least one of the first electrode layer A 5 C and the second electrode layer C 5 A.
  • the layer stacks are typically arranged on top of a substrate S.
  • the light emissive layer E may e.g. comprise a polymer layer, such as polyphenylenevinylene (PPV) 5 polyfluorenes and polyspirofluorenes.
  • a polymer layer such as polyphenylenevinylene (PPV) 5 polyfluorenes and polyspirofluorenes.
  • PV polyphenylenevinylene
  • a polyethylenedioxythiophene (PEDOT) layer can be used as a hole-injection layer.
  • PEDOT polyethylenedioxythiophene
  • an at least semi-transparent first electrode layer A is arranged between the light emissive layer E and a further at least semi-reflective layer R, whereas the semi-reflective layer R is separated from the anode layer A by one or more substantially light transparent intermediate layers I.
  • Figs. IA and IB illustrate top-emission devices 1, wherein light is output in a direction away from a substrate S.
  • Figs. 1C and ID illustrate bottom-emission devices 1, wherein light is output through a light transparent substrate S.
  • an at least semi-transparent first electrode layer C is arranged between the light emissive layer E and a further at least semi-reflective layer R, whereas the semi-reflective layer R is separated from the cathode layer C by one or more substantially light transparent intermediate layers I.
  • Figs. IE and IF illustrate top-emission devices 1, wherein light is output in a direction away from a substrate S.
  • Figs. IG and IH illustrate bottom-emission devices 1, wherein light is output through a light transparent substrate S.
  • the cathode layer C is partly light transparent, partly light reflective for light emitted from the light emissive layer E.
  • the cathode layer is e.g. made of a thin layer, typically a few nm, of Ba, Ca or Mg with on top a thin metal film such as Ag, Al or Pt. Also cathode layers C incorporating LiF can be applied.
  • the anode layer A is substantially transparent.
  • TCO transparent conductive oxide
  • ITO indium tin oxide
  • the anode layer A may have a thickness in a range of 1-200 nm, e.g. 100 nm.
  • the anode layer A is partly transparent, partly reflective.
  • a thin metallic film of e.g. Ag or Al of a few nm may be used to obtain such an anode layer.
  • the intermediate light transparent layer I comprises e.g. ZnSe, ZnS, TiO2, silicon-nitride, silicon-oxide and/or silicon-oxynitride. In order to take advantage of microcavity effects, this light transparent layer I should have a thickness not larger than approximately 1 ⁇ m.
  • a substantially reflective layer R e.g. made of a metal film of Mo, Cr, Al or Ag with a thickness of e.g. larger than 50 nm, e.g. 100 nm, is arranged over a substrate S.
  • a reflective layer R with a finite transmittance (0.1-10%) may be selected in order to allow optical feedback by employing a light sensitive device (not shown) beneath the layer R.
  • a microcavity is formed between the partly reflective cathode layer C and the reflective layer R.
  • the microcavity effect can be tuned without disturbing the electrical characteristics of the device 1 near the light emissive layer E.
  • Microcavity effects can be diminished or eliminated by choosing the thickness of the intermediate layer I larger than approximately 1 ⁇ m in which case coherency of individual light beams is lost and/or interference effects average out.
  • Fig. 2A shows simulation results illustrating how the light output of the device 1 varies as a function of the wavelength ⁇ 0 (in nm along the horizontal axis) and thickness of the intermediate film I (in nm along the vertical axis) for various viewing angles ⁇ .
  • the thickness of the intermediate layer I can be selected to tune the interference effects of the microcavity. With increasing thickness, the interference maxima are located at larger wavelengths ⁇ 0 .
  • a first microcavity is formed between the partly reflective cathode layer C and the partly reflective anode layer A and a second microcavity is formed between the partly reflective anode layer A and the substantially fully reflective layer R.
  • the second microcavity can be tuned by selecting a thickness of the intermediate layer I without effecting the electrical characteristics of the device 1 near the light emissive layer E.
  • Fig. 2B shows simulation results illustrating how the light output of the device 1 with two microcavities varies as a function of the wavelength ⁇ 0 (in nm along the horizontal axis) and thickness of the intermediate film I (in nm along the vertical axis) for various viewing angles.
  • ⁇ 0 in nm along the horizontal axis
  • thickness of the intermediate film I in nm along the vertical axis
  • FIG. IB an inverted top-emission light-emitting device 1 is shown.
  • the layer stack comprises a substrate S, a light reflective cathode layer C, a light emissive layer E, an anode layer A that may be either substantially light transparent or partly light transparent, partly light reflective.
  • the anode layer A is separated from a partly light transparent, partly light reflective layer R by one or more light transparent layers I.
  • a bottom-emission light-emitting device 1 is shown.
  • the layer stack comprises a light transparent substrate S over which a light reflective cathode layer C, a light emissive layer E and an anode layer A that may be either substantially light transparent or partly light transparent, partly light reflective, are applied.
  • the anode layer A is separated from a partly light transparent, partly light reflective layer R by one or more light transparent layers I.
  • the cathode layer C is substantially light reflective for light emitted from the light emissive layer E.
  • the cathode layer is e.g. made of a thick metallic layer with a thickness of e.g. 100 200nm, including a low work function film of 1-10 nm of Ba, Ca or Mg combined with a metal film such as Ag, Al or Pt. Also cathode layers C incorporating LiF can be applied.
  • the anode layer A is substantially transparent.
  • a layer of transparent conductive oxide (TCO), such as indium tin oxide (ITO) is employed as a transparent anode layer A.
  • the anode layer A is partly light transparent, partly light reflective.
  • a thin metallic film of e.g. Ag or Al of a few nm may be used to obtain such an anode layer.
  • the light transparent intermediate layer I may comprise ZnSe, ZnS, TiO2, silicon-nitride, silicon-oxide and/or silicon-oxynitride. In order to take advantage of microcavity effects, this light transparent layer I should have a thickness not larger than approximately 1 ⁇ m.
  • a partly light transparent, partly light reflective layer R e.g. comprising a film containing Mo, Cr, Al or Ag is arranged over a transparent substrate S.
  • a microcavity is formed between the substantially reflective cathode layer C and the partly light transparent, partly light reflective layer R.
  • a first microcavity is formed between the substantially reflective cathode layer C and the partly reflective anode layer A and a second microcavity is formed between the partly reflective anode layer A and the partly light reflective, partly light transparent layer R.
  • the second microcavity can be tuned by selecting a thickness of the intermediate layer I without effecting the electrical characteristics of the device 1 near the light emissive layer E.
  • the layer stack comprises a substrate S, a partly light transparent, partly light reflective cathode layer C, a light emissive layer E, an anode layer A that may be either substantially light transparent or partly light transparent, partly light reflective.
  • the anode layer A is separated from a substantially light reflective layer R by one or more light transparent layers I.
  • a microcavity is formed between the reflective layer R and the cathode layer C.
  • a first microcavity is formed between the cathode layer C and the anode layer A and a second microcavity is formed between the anode layer A and the reflective layer R.
  • Microcavity effects in the device 1 can be controlled without or without substantially disturbing the electrical characteristics of the device 1 near the light emissive layer E.
  • a top emission light-emitting device 1 is shown.
  • the layer stack comprises a substrate S, a light reflective anode layer A, a light emissive layer E, a cathode layer C that may be either substantially light transparent or partly light transparent, partly light reflective.
  • the cathode layer C is separated from a partly light transparent, partly light reflective layer R by one or more light transparent layers I.
  • an inverted top emission light-emitting device 1 is shown.
  • the layer stack comprises a light transparent substrate S over which a light transparent anode layer A, a light emissive layer E and a cathode layer C that may be either substantially light transparent or partly light transparent, partly light reflective, are applied.
  • the cathode layer C is separated from a light reflective layer R by one or more light transparent layers I.
  • a bottom emission light-emitting device 1 is shown.
  • the layer stack comprises a transparent substrate S, a partly light transparent, partly light reflective anode layer A, a light emissive layer E, a cathode layer C that may be either substantially light transparent or partly light transparent, partly light reflective.
  • the cathode layer C is separated from a substantially light reflective layer R by one or more light transparent layers I.
  • Fig. IH an inverted bottom-emission light-emitting device 1 is shown.
  • the layer stack comprises a light transparent substrate S over which a light reflective anode layer A, a light emissive layer E and a cathode layer C that may be either substantially light transparent or partly light transparent, partly light reflective, are applied.
  • the cathode layer C is separated from a light reflective layer R by one or more light transparent layers I.
  • a microcavity is formed between the reflective layer R and the anode layer A.
  • a first microcavity is formed between the cathode layer C and the anode layer A and a second microcavity is formed between the cathode layer C and the reflective layer R.
  • Microcavity effects in the device 1 can be controlled without or without substantially disturbing the electrical characteristics of the device 1 near the light emissive layer E.
  • the substrate S may be a reflective substrate, such that the presence of a reflective layer R on or over the substrate S is unnecessary.
  • a steel substrate may e.g. be applied.
  • the intermediate layer or layer I may act also as a barrier against e.g. oxygen and water.
  • light emission of the light emissive layer E may leave the device 1 in both directions, i.e. a dual side emitting device, such that all layers in the stack should be at least semi-transparent.
  • the light transparent intermediate layer may comprise a plurality of layers with specific optical and/or physical-chemical properties, an example of which will be described below with reference to Fig. 4.
  • the stack could have planarizing properties or provide a chemical barrier in between the metallic reflector and subsequent layers.
  • the optical properties of the multilayer stack can be such that the emitted light intensity and/or color purity of emitted light is optimised and/or the angular distribution of the light-output is optimised.
  • the optical properties can be chosen such as to minimize reflection of ambient light from the cavity to improve the daylight contrast of a display.
  • outcoupling structures could be included in the stack to enhance outcoupling of light that would otherwise be subject to waveguiding.
  • the (semi-) reflective layer R in the above- mentioned embodiments may be a conductive reflective layer, for it is electrically insulated by the intermediate layer I from the anode layer A or cathode layer C.
  • the conductive reflector may be used for electrically shunting either one of the electrode layers (e.g. cathode, anode) or other current carrying lines such as power lines of an active matrix display.
  • the intensity enhancement (along the vertical axis in arbitrary units) for light emitted from a light emissive layer E in a microcavity is plotted as a function of wavelength ⁇ (along the horizontal axis in nm).
  • the wavelength ⁇ max for which this enhancement reaches its maximum depends on the thicknesses of the layer(s) between the reflecting surfaces and the viewing angle ⁇ .
  • the resonance condition is:
  • ⁇ c and ⁇ a are the phase shifts (in radians) resulting from reflection at the cathode layer and the anode layer, and N is an integer.
  • a different resonance maximum means that a different part of the emission spectrum is enhanced by the cavity.
  • the observed colour will change with viewing angle ⁇ .
  • the function ⁇ max ( ⁇ ) is more complex. It then resembles a weighted average of terms of the form of equation (2) with a different ⁇ ' for each layer (determined by n t ), but is also influenced by reflections at the interfaces between the layers.
  • the colour shift ⁇ c as a function of viewing angle ⁇ increases with increasing JV-number of the resonance.
  • the shift of a wide enhancement profile acting on the emission spectrum B has less effect on the observed colour than the shift of a narrow profile.
  • the substantially light transparent intermediate layer I between the anode layer A and the reflective layer R has been found to be advantageous to cope with this problem.
  • an intermediate layer Il of high refractive index material between the reflecting surfaces e.g. the partly light reflective, partly light transparent cathode layer C and the reflective layer R of the light emitting devices of Fig. 1 is advantageous.
  • a high refractive index light transparent intermediate layer Il here means that the material is transparent in the visible spectrum and has a refractive index rih with the real part higher than 1.9, preferably higher than 2.0, for at least a part of the visible spectrum.
  • Appropriate examples of such materials are ZnSe, ZnS, silicon nitride and TiO 2 .
  • the reduction of the colour shift ⁇ c is directly related to a reduction of the resonance shift ⁇ that is the result of the relatively small propagation angle ⁇ ' in the intermediate layer II, as defined by equation (3) (with n e replaced by rih).
  • Inclusion of the high refractive index light transparent intermediate layer Il may reduce the effective reflection of the reflective layer R. This may be prevented by choosing for one or more of the other layers not their minimum thickness.
  • a transparent tuning layer 12 (shown in Fig. 4) with a refractive index different from n ⁇ may be included between the transparent anode layer A and the reflective layer R.
  • the transparent tuning layer 12 may be located on both sides of the high refractive index layer II. Variation of the thickness of the two layers with different refractive index allows tuning of the effective reflection. The reflection can even be made higher than it is without the additional layers of this invention.
  • Fig. 4 shows a portion of an embodiment of the invention of a top-emission polymer colour light-emitting device 1 with three subpixels R, G and B.
  • the high refractive index light transparent intermediate layer Il e.g. ZnSe, ZnS, silicon nitride, TiO 2
  • a substantially reflective layer R e.g. Mo, Cr, Al, Ag
  • an ITO light transparent anode layer A e.g. Mo, Cr, Al, Ag
  • a thin tuning layer 12 with lower refractive index e.g. SiO 2
  • the reflective layer R control electronics for driving the subpixels R, G and B are provided in a layer Q.
  • the materials of the light emissive layer E for different subpixels R, G and B have different emission spectra (typically they emit red, green and blue light). Thus ⁇ 0 is also different for each of these materials, and the cavity between the reflective layer R and the cathode layer C must have a different optical thickness for each subpixel. This is realised by varying the thickness of the hole-injection layer H which can be applied by printing thereby enabling thickness variations per subpixel relatively easy. Although the light-emissive layers E(R), E(G) and E(B) are also applied by printing, the thickness range for which these operate properly is limited.
  • Variation between subpixels of the thickness of the high refractive index intermediate layer Il would give a minimal colour shift ⁇ c for all subpixels R, G and B, but may be disadvantageous from a processing point of view.
  • the thickness of the hole-injection layer H may be given its minimum thickness (to allow for a maximum thickness of the high-zz layer) only in the subpixel with the smallest resonant thickness, i.e. the blue subpixel B.
  • this approach is suitable. Simulations have been performed for the light-emitting device 1 of Fig.
  • the colour shift is defined as the length of the vector that connects the (u , v ) chromaticity coordinates.
  • the device 1 of Fig. 4 has a ZnSe-layer as the high refractive index light transparent intermediate layer Il and a SiO2 layer as tuning layer 12.
  • a green light emissive layer E has been used. The results are listed in Table 1.
  • a reference device without the high refractive index at least transparent intermediate layer Il and without a SiO2 layer as tuning layer 12 is tabulated in the first row of the table.
  • Embodiment 12 (nm) Il (nm) A (nm) / (a.u.) Ac(u , v ) reference 0 0 125 1 0.038 invention 0 59 30 0.93 0.023 invention 11 50 30 1 0.025 invention 55 30 30 1.35 0.031
  • the substantially light transparent intermediate layer I may be made of a birefringent material, shown in top view in Fig. 5.
  • the intermediate layer I has an index of refraction n 0 and a different index of refraction n e in the plane of the layer I.
  • n 0 index of refraction
  • n e index of refraction
  • An exciton of the light emissive layer E will see a different index of refraction.
  • the emission of polarized light can offer advantageous applications, such as a light emitting device, e.g. backlight emitting polarized light, for a LCD display device, shown in Fig. 6B.
  • a light emitting device e.g. backlight emitting polarized light
  • LCD display device shown in Fig. 6B.
  • a light-emitting device in a direct view display device, shown in Fig. 6A, can be combined with a polarizing front plate (not shown).
  • the contrast of the display panel may be significantly increased compared to a display panel without a polarizing plate.
  • a display with circular polarizer usually used for contrast enhancement
  • the daylight contrast decreases, but the brightness doubles.
  • Figs. 6A-6C schematically show applications of light-emitting devices according to the invention.
  • Fig. 6A shows a display device 10 comprising a display panel comprising e.g. the light-emitting device 1 of Fig. IA and a driver 11 capable of driving the light emitting device 1 by supplying driving signals to at least one of the anode layer A and the cathode layer C for displaying images on the display panel.
  • Fig. 6B shows a display device 10 comprising e.g. a light-emitting device 1 of Fig. IA for illuminating a display panel 12 and a driver 11 capable of driving said light- emitting device 1 by supplying driving signals to at least one of said first electrode and second electrode for displaying images on said display panel.
  • a display device 10 comprising e.g. a light-emitting device 1 of Fig. IA for illuminating a display panel 12 and a driver 11 capable of driving said light- emitting device 1 by supplying driving signals to at least one of said first electrode and second electrode for displaying images on said display panel.
  • Fig. 6C depicts a light source 20 for illumination purposes employing e.g. a light-emitting device 1 of Fig. IA.
  • any reference signs placed between parentheses shall not be construed as limiting the claim.
  • the word “comprising” does not exclude the presence of elements or steps other than those listed in a claim.
  • the word “a” or “an” preceding an element does not exclude the presence of a plurality of such elements.
  • the mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.

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Abstract

L’invention concerne un dispositif luminescent comprenant une couche luminescente (E) disposée entre une première couche d’électrode au moins semi-transparente (A; C) et une seconde couche d’électrode au moins semi-réfléchissante (C; A). Ladite première couche d’électrode au moins semi-transparente est disposée entre ladite couche luminescente et une autre couche au moins semi-réfléchissante (R). Ladite autre couche au moins semi-réfléchissante est séparée de ladite première couche d’électrode au moins semi-transparente par une ou plusieurs couches intermédiaires transparentes à la lumière. En contrôlant l’épaisseur de la ou des couches intermédiaires transparentes à la lumière qui sont situées à l’extérieur de la région critique électriquement du dispositif luminescent, on peut accorder les effets d’interférence du dispositif luminescent sans compromettre l’équilibre délicat des propriétés électriques du dispositif.
PCT/IB2006/052079 2005-06-30 2006-06-26 Dispositif luminescent WO2007004106A1 (fr)

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EP05105870.9 2005-06-30

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FR2946799A1 (fr) * 2009-06-15 2010-12-17 Astron Fiamm Safety Diode et procede de realisation d'une diode electroluminescente organique incluant une couche de planarisation du substrat
EP2887411A1 (fr) * 2013-12-23 2015-06-24 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Matériaux biréfringents photoactifs dans des OLED
CN110085751A (zh) * 2019-04-19 2019-08-02 武汉华星光电半导体显示技术有限公司 有机发光二极管装置以及其形成方法
WO2023043943A1 (fr) * 2021-09-16 2023-03-23 Meta Platforms Technologies, Llc Élément d'affichage à émission de lumière et dispositif à sortie polarisée et à commande angulaire
US11889717B2 (en) 2021-09-16 2024-01-30 Meta Platforms Technologies, Llc Light emission display element and device with polarized and angularly-controlled output

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CN101051676B (zh) * 2007-05-15 2010-10-06 友达光电股份有限公司 有机电激发光像素、有机电激发光元件及其制造方法
FR2946799A1 (fr) * 2009-06-15 2010-12-17 Astron Fiamm Safety Diode et procede de realisation d'une diode electroluminescente organique incluant une couche de planarisation du substrat
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US8822985B2 (en) 2009-06-15 2014-09-02 Astron Fiamm Safety Sarl Diode and process for making an organic light-emitting diode with a substrate planarisation layer
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US10038168B2 (en) 2013-12-23 2018-07-31 Nederlandse Organisatie voor toegepast-natuurwe-tenschappelijk onderzoek TNO Photoactive birefringent materials in OLEDs
CN110085751A (zh) * 2019-04-19 2019-08-02 武汉华星光电半导体显示技术有限公司 有机发光二极管装置以及其形成方法
CN110085751B (zh) * 2019-04-19 2020-08-11 武汉华星光电半导体显示技术有限公司 有机发光二极管装置以及其形成方法
WO2023043943A1 (fr) * 2021-09-16 2023-03-23 Meta Platforms Technologies, Llc Élément d'affichage à émission de lumière et dispositif à sortie polarisée et à commande angulaire
US11889717B2 (en) 2021-09-16 2024-01-30 Meta Platforms Technologies, Llc Light emission display element and device with polarized and angularly-controlled output

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