WO2006106826A1

WO2006106826A1 - Organic el display, organic transistor, and methods for manufacturing those

Info

Publication number: WO2006106826A1
Application number: PCT/JP2006/306664
Authority: WO
Inventors: Takashi Chuman; Satoru Ohta; Chihiro Harada; Atsushi Yoshizawa
Original assignee: Pioneer Corporation
Priority date: 2005-03-30
Filing date: 2006-03-30
Publication date: 2006-10-12
Also published as: JPWO2006106826A1

Abstract

Disclosed is an organic EL display wherein deterioration in performance of an organic transistor is suppressed. Also disclosed is a method for manufacturing such an organic EL display, an organic transistor and a method for manufacturing an organic transistor. Specifically disclosed is an organic EL display (P1) comprising a protective film (20) which covers an organic transistor (50) for protecting the organic transistor (50). An interlayer insulating film (72) is formed between the protective film (20) and the organic transistor (50) as a protective layer for protecting the organic transistor from at least either electromagnetic waves or particle beams.

Description

Organic EL display device, organic transistor, and manufacturing method thereof

Technical field

The present invention relates to an organic EL display device, a method for manufacturing an organic EL display device, an organic transistor, and a method for manufacturing an organic transistor.

Background art

[0002] Organic transistors are used in various applications. For example, it is used as a means for driving an organic EL element in an organic EL display device.

[0003] An organic EL device includes an electrode and an organic solid layer having at least a light-emitting layer between the electrodes, and injects electrons and holes into the light-emitting layer in the organic solid layer from both the electrode caps. It is an element that causes light emission in the organic light emitting layer, and can emit light with high brightness. In addition, since it uses the luminescence of organic compounds, it has a feature such as a wide selection range of luminescent colors, and is expected as a light source and organic EL display device. In particular, the organic EL display device is generally expected as a flat panel display having a wide field of view, high contrast, high speed response and visibility, thin and light, and low power consumption.

[0004] An organic EL display device includes a pixel composed of an organic EL element including at least an anode, an organic light emitting layer, and a cathode, and an organic transistor that lights and controls the organic EL element. In organic EL display devices, a passive matrix method in which organic EL elements arranged in a matrix are driven externally by stripe-shaped scanning electrodes and data electrodes (signal electrodes) orthogonal to each other, and a thin film transistor (hereinafter also referred to as TFT) for each pixel. There is a switching element, a driving element, and a memory element, and an active matrix system that turns on the organic EL element.

[0005] In organic EL display devices, the active matrix method, in which organic EL elements are driven by TFTs (Thin Film Transistors), is generally superior to the passive matrix method as the number of pixels increases. . In the passive matrix method, the organic EL element of each pixel is lit only during the period when the scanning electrode is selected, and the average luminance decreases as the lighting period of the organic EL element becomes shorter as the number of pixels increases. While it tends to In the active matrix method, each pixel is equipped with a switching element and a memory element consisting of TFTs, so that the organic EL elements remain lit, and can operate with high brightness, high efficiency, and long life. The reason is that it tends to be advantageous for refinement and enlargement.

[0006] In addition, by adopting organic TFTs as the TFTs described above, it is expected to reduce costs, reduce environmental impact, or realize flexible displays!

[0007] By the way, organic EL elements and organic TFTs are subject to erosion due to moisture, oxygen, etc. in the air, and in the presence of these, deterioration such as dark spots or short-circuiting of the elements may occur. . In order to prevent such deterioration, it is necessary to protect the element from erosion by moisture and oxygen in the air. Currently, the entire element is covered with a cover glass or can package in an atmosphere of dry nitrogen or argon gas. The sealing method is used.

[0008] However, such a sealing method using glass, cans, etc. has a high manufacturing cost, and there are cases where there is a limit to thinning the element. Therefore, a structure in which an organic ELEL element and an organic TFT are covered with a protective film having a moisture-proof function without using glass or a can package has been proposed as shown in Patent Document 1 below.

FIG. 1 shows an organic EL display device PA according to the background art. The organic EL display device PA covers the substrate 10, the barrier film 12 formed on the substrate 10, the organic EL element 100 and the organic TFT 50 formed on the barrier film 12, and the organic EL element 100 and the organic TFT 50. And a protective film (passivation film) 20.

Patent Document 1: Japanese Patent Laid-Open No. 2003-255857

Disclosure of the invention

Problems to be solved by the invention

[0010] However, when the protective film is formed by a vacuum process such as a CVD method, for example, a plasma generated at the time of film formation, such as electromagnetic waves, particle beams such as alpha rays, beta rays, ultraviolet rays Such as light with a wavelength shorter than visible light, sometimes visible light, and infrared light may damage the organic layer that constitutes the organic TFT, resulting in deterioration of the performance of the organic TFT. [0011] In addition, even after manufacturing the protective film, electromagnetic waves emitted in manufacturing processes using other plasmas, particle beams, and organic layers constituting organic TFTs are damaged by electromagnetic waves when used by consumers. The performance of organic TFT may deteriorate.

The present invention has been made in view of the above problems, and provides an organic EL display device, a method for manufacturing the organic EL display device, a method for manufacturing the organic transistor, and a method for manufacturing the organic transistor, in which the performance deterioration of the organic transistor is less. The main purpose is to provide.

Means for solving the problem

[0013] The invention according to claim 1 is an organic EL display device including an organic EL element including at least an anode, an organic light emitting layer, and a cathode, and an organic transistor that drives the organic EL element. And a protective layer that protects at least one of electromagnetic waves and particle beams between the protective film and the surface of the organic transistor. Is formed.

[0014] The invention according to claim 7 is a method of manufacturing an organic EL display device including an organic EL element including at least an anode, an organic light emitting layer, and a cathode, and an organic transistor for driving the organic EL element, Forming a protective layer for protecting the organic transistor from at least one of electromagnetic waves and particle beams on the surface of the organic transistor; and forming a protective film for protecting the organic transistor on the protective layer. And a protective film forming step.

[0015] The invention according to claim 13 is an organic transistor comprising a protective film that covers the organic transistor and protects at least the organic transistor, and is provided between the protective film and the surface of the organic transistor. Is characterized in that a protective layer for protecting the organic transistor is formed from at least one of electromagnetic waves and particle beams.

[0016] The invention according to claim 19 is a method of manufacturing an organic transistor, wherein a protective layer that protects the organic transistor with at least one of electromagnetic force and particle beam is formed on the surface of the organic transistor. A protective layer forming step; and a protective film forming step of forming a protective film for protecting the organic transistor on the protective layer.

Brief Description of Drawings FIG. 1 is a schematic cross-sectional view of an organic EL display device in the prior art.

FIG. 2 is a schematic cross-sectional view of an organic EL display device in the present embodiment.

FIG. 3 is a schematic enlarged view of the vicinity of the organic EL element of the organic EL display device in the present embodiment.

FIG. 4 is a schematic enlarged view of the vicinity of the organic TFT of the organic EL display device in the present embodiment.

FIG. 5 is a schematic cross-sectional view of an organic EL display device in the present embodiment.

FIG. 6 is a schematic cross-sectional view of an organic EL display device in the present embodiment.

Explanation of symbols

[0018] 10 substrates

16 Organic solid layer

18 Cathode

20 Protective film

50 organic TFT

72, 74, 76 Insulating film

100 organic EL elements

PI, P2, P3, PA OLED display

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present embodiment is only one form for carrying out the present invention, and the present invention is not limited to the present embodiment.

[0020] "Organic EL display device"

FIG. 2 shows a schematic cross-sectional view of the organic EL display device P1 according to the present embodiment. Organic

The EL display device P1 includes a film substrate 10, a barrier film 12 formed on the substrate 10, an organic EL element 100 and an organic TFT 50 formed on the noria film 12, and an interlayer insulating film 72 covering the organic TFT 50, The protective film 20 covers the surface of the interlayer insulating film 72 and protects the organic EL element 100 and the organic TFT 50 from erosion from the outside.

A barrier film 12 is formed on the substrate 10. Organic EL element 100 on Noria film 12 Machine TFT50 is placed in parallel. An interlayer insulating film 74 that insulates the anode 14 and the cathode 18 from the top of the anode 14 of the organic EL element 100 to a portion in contact with the cathode 18 is formed on the right side of the organic EL element 100 described later. At least the interlayer insulating film 72 is a protective layer that protects the organic TFT 50 with at least one of electromagnetic waves and particle beams.

The organic EL element 100 and the organic TFT 50 are covered with a protective film 20 that protects the erosion power of external force so as to cover the interlayer insulating film 72 and the cathode 18.

[0022] <Substrate>

The substrate 10 may be formed by appropriately selecting the constituent materials. For example, as the resin, thermoplastic resin, thermosetting resin, polycarbonate, polymethyl methacrylate, polyarylate, polyether sulfone, polysulfone, polyethylene terephthalate polyester, polypropylene, cellophane, polycarbonate, cellulose acetate, polyethylene, Poly (vinyl chloride), polystyrene, polyamide, polyimide, poly (vinyl chloride), polyvinyl alcohol, saponified ethylene butyl acetate copolymer, fluorine resin, salt rubber, ionomer, ethylene / acrylic acid copolymer Various substrates can be used as ethylene / acrylic acid ester copolymers. In addition, a glass substrate or a glass-plastic bonded substrate may be used instead of a substrate containing rosin as a main component, and an alkali barrier film or a gas barrier film may be coated on the substrate surface. In addition, in the case of a top emission type in which light is emitted from the opposite side to these transparent substrates, the substrate 10 is not necessarily transparent.

[0023] <Barrier film>

The noria film 12 does not necessarily have to be formed, but it is preferable because it can protect the erosion force by moisture or oxygen from the substrate side. When the barrier film 12 is formed, the material can be appropriately selected and used.

The noria film 12 may be a multilayer structure, a single layer structure, an inorganic film, or an organic film, but if an inorganic film is included, moisture, oxygen, etc. This is preferable because the noria property from erosion due to ashing is improved.

As the inorganic film, for example, a nitride film, an oxide film, a carbon film, a silicon film, or the like can be used. More specifically, a silicon nitride film, a silicon oxide film, a silicon oxide film, or the like can be used. Nitride film, or Examples include diamond-like carbon (DLC) films and amorphous carbon films. That is, nitrides such as SiN, A1N, and GaN, oxides such as SiO, Al 2 O, Ta 2 O, ZnO, and GeO

2 3 2 5

Oxynitrides such as SiON, carbonitrides such as SiCN, metal fluorine compounds, metal films, and the like.

[0025] Examples of the organic film include a furan film, a pyrrole film, a thiophene film, or a polyparaxylene film, an epoxy resin, an acrylic resin, a polyparaxylene, and a fluorine-based polymer (perfluoroolefin, perfluoroolefin ether, tetrafanol). Fluoroethylene, chlorotrifluoroethylene, dichlorodifluoroethylene, etc.), metal alkoxides (CHOM, CHOM, etc.),

3 2 5

Polymerized films such as lyimide precursors and perylene compounds can be used.

[0026] The noria film 12 has a laminated structure having two or more kinds of material strength, an inorganic protective film, a silane coupling layer, a laminated structure made of a resin sealing film, a barrier layer made of an inorganic material, and an organic material cover. Laminated structure that also has cover layer strength, Si-CXHY or other metal or compound of semiconductor and organic material, laminated structure of inorganic material, structure in which inorganic film and organic film are laminated alternately, Si on Si layer Examples thereof include a laminated structure such as a structure in which O or SiN is laminated.

2 3 4

[0027] <Organic EL device>

FIG. 3 shows an enlarged view of the vicinity of the organic EL element 100 of the organic EL display device P1. The organic EL element 100 is configured by laminating the barrier film 12 side force from the anode 14Z organic solid layer 16Z cathode 18 as well.

[0028] As the anode 14, a transparent electrode such as ITO (Indium tin oxide) may be used as long as it uses a layer having an energy level at which holes can be easily injected. In the case of the top emission type, a general electrode may be used instead of the transparent electrode.

[0029] A transparent conductive material such as ITO is formed to a thickness of, for example, 150 nm by sputtering or the like. Instead of ITO, an oxide zinc (ZnO) film, IZO (indium zinc oxide alloy), gold, copper iodide, or the like may be employed instead.

[0030] The organic solid layer 16 includes a hole injection layer 162 / a hole transport layer 164 / a light emitting layer 166 / an electron transport layer 167 / an electron injection layer 168 from the anode 14 side.

[0031] The hole injection layer 162 is provided between the anode 14 and the hole transport layer 164. It is a layer that promotes the injection of holes. Due to the hole injection layer 162, the driving voltage of the organic EL element 100 can be lowered. Also, if it plays a role such as stabilizing hole injection and extending the life of the device, or covering uneven surfaces such as protrusions formed on the surface of the anode 14 to reduce device defects There is also.

The material of the hole injection layer 162 may be selected as appropriate so that the ionization energy is between the work function of the anode 14 and the ion energy of the hole transport layer 164. For example, triphenylamine tetramer (TPTE), copper phthalocyanine and the like can be used.

[0033] The hole transport layer 164 is a layer provided between the hole injection layer 162 and the light emitting layer 166 to promote hole transport, and has a function of appropriately transporting holes to the light emitting layer 166. .

The material of the hole transport layer 164 may be appropriately selected so that the ionization energy is between the hole injection layer 162 and the light emitting layer 166. For example, TPD (triphenylamine derivative), NPB (N, N-di (naphthalene-1-yl) -N, N-diphenyl-benzidene) can be employed.

[0035] The light-emitting layer 166 is a layer that recombines the transported holes and the transported electrons, which will be described later, to emit fluorescence or phosphorescence. The material of the light-emitting layer 166 may be selected as appropriate so as to satisfy the properties corresponding to the above light-emitting modes. For example, tris (8-quinolinolato) aluminum complex (Alq), bis (benzoquinolinolato) beryllium complex (Be Bq), tri (dibenzoylmethyl) phenantorporin europium complex (Eu (DBM) 3 (Phen n )), Ditoluyl birubbe (DTVBi), poly (p-phenolene), and π-conjugated polymers such as polyalkylthiophene. For example, aluminum quinolinol complex (Alq) can be used to emit green light.

Three

[0036] For example, in a phosphorescent device, when electrons and holes are injected from the cathode 18 and the anode 14 respectively into the phosphorescent light emitting layer 166 and recombined there, the recombination energy is doped through the host material. When supplied to the material, this dopant emits phosphorescence. Here, under conditions where the injection current density is low, this phosphorescent organic EL device can emit red light due to the dopant. In addition, under conditions where the injection current density is high, the host material according to the present invention having a light emitting function also emits light, and the emission color of the host material and the emission color of the dopant material are different. Additive light is obtained. For example, when a compound that emits light blue is used, the dopant emits red light. Therefore, in this organic EL element, white light in which light blue and red are synthesized can be emitted to the outside.

The electron transport layer 167 is provided between the electron injection layer 168 and the light emitting layer 166, and has a function of transporting electrons to the light emitting layer 166. For the electron transport layer 167, for example, an aluminum quinolinol complex (Alq) can be used.

Three

The electron injection layer 168 is provided between the electron transport layer 167 and the cathode 18 and has a function of promoting the injection of electrons from the cathode 18.

The material of the electron transport layer 168 may be appropriately selected so as to be between the work function of the cathode 18 and the electron affinity of the light emitting layer 166. For example, the electron transport layer 168 may be a thin film (for example, 0.5 nm) such as LiF (lithium fluoride) or Li 0 (lithium oxide).

2

[0040] Each layer constituting the organic solid layer 16 is usually made of an organic material, and further, it may be made of a high molecular weight organic material when it is made of a low molecular weight organic material. Organic solid layers with low molecular organic strength are generally produced by dry processes (vacuum processes) such as vapor deposition. Organic solid layers made of high molecular organic materials are generally spin coated, blade coated, dipped, sprayed, and printed. Each can be formed by a wet process.

[0041] As an organic material used for each layer constituting the organic solid layer 16, for example, as a polymer material, PEDOT, polyarine, polyparaphenylene-biylene derivative, polythiophene derivative, polyparaphenylene derivative, polyalkylphenol, And polyacetylene derivatives.

In the present embodiment, the organic solid layer 16 includes a hole injection layer 162, a hole transport layer 164, a light emitting layer 166, an electron transport layer 167, and an electron injection layer 168. However, the present invention is not limited to this configuration as long as it includes at least the light emitting layer 166.

[0043] For example, depending on the characteristics of the organic material used, etc., in addition to the single layer structure of the light emitting layer, etc., the hole transport layer Z light emitting layer, the light emitting layer Z electron transport layer and other two layer structures, hole transport Layer Z Light-emitting layer Z Three-layer structure of Z electron transport layer and multilayer structure with charge (hole, electron) injection layer etc. Can be made.

Furthermore, a hole blocking layer may be provided between the light emitting layer 166 and the electron transport layer 168 in the organic solid layer 16. Holes may pass through the light emitting layer 166 and reach the cathode 18. For example, when Alq or the like is used for the electron transport layer 168, holes may flow into the electron transport layer.

Three

The Alq emits light, and holes cannot be trapped in the light emitting layer, resulting in low luminous efficiency.

Three

There is a possibility of lowering. Therefore, a hole blocking layer may be provided to prevent holes from flowing out from the light emitting layer 166 to the electron transporting layer 168.

For the cathode 18, a material having a small work function or electron affinity may be selected in order to improve electron injection into the organic solid layer 16. For example, an alloy type (mixed metal) such as an Mg: Ag alloy or an Al: Li alloy can be suitably used. The cathode 18 can be formed of a metal material such as A1, Mg, and Ag by vacuum deposition or the like to a thickness of 150 nm, for example.

[0046] <Organic transistor (organic TFT)>

FIG. 4 shows an enlarged view of the vicinity of the organic TFT 50 of the organic EL display device P1. The organic TFT 50 includes a gate electrode 52 formed on the barrier film 12 from the noria film 12 side, and a gate insulating film 54 formed so as to cover the surface of the gate electrode 52.

[0047] On the gate insulating film 54, an organic semiconductor layer 56, a source electrode 58 on the left edge side, and a drain electrode 60 on the right edge side are formed. Here, the drain electrode 60 is electrically connected to the anode 14 of the organic EL element 100. That is, in the organic TFT 50, the source electrode 58 and the drain electrode 60 are provided separately from each other, the organic semiconductor layer 56 is interposed between the source electrode 58 and the drain electrode 60, and the source electrode is interposed through the gate insulating film 54. 58, a drain electrode 60, and a gate electrode 52 disposed to face the organic semiconductor layer 56.

[0048] The gate electrode 52 may be any metal that can be anodized as the gate electrode material. A single substance such as Al, Mg, Ti, Nb, Zr, or an alloy thereof may be used, but the material is not limited thereto. No. The gate electrode only needs to have sufficient conductivity.For example, Pt, Au, W, Ru, Ir, Al, Sc, Ti, V, Mn, Fe, Co, Ni, Zn, Ga, Y, Zr, Nb, Mo, Tc, Rh, Pd, Ag, Cd, Ln, Sn, Ta, Re, Os, Tl, Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho , Er, Tm, Yb, Lu, etc. Also, metal oxides such as ΙΤΟ, ΙΖΟ, polyaniline, polythiophene, polypyrrole An organic conductive material containing a conjugated polymer compound such as rutile may also be used.

The manufacturing method of the gate electrode 52 may be any general method for forming the wiring pattern of the gate electrode 52 on the substrate 10. Power that can be used for sputtering, CVD, etc. There is no particular limitation and an appropriate one may be used. For example, general thin film forming methods such as vacuum deposition, ion plating, sol-gel method, spin coating method, spray method, and CVD are also possible.

[0050] Preferably, the gate insulating film 54 may be formed into a gate insulating film 54 by subjecting the surface of the material used as the material of the gate electrode 52 to a positive oxidation. However, the present invention is not limited to this, and any insulating material such as inorganic material or organic material can be used.

[0051] For example, metal oxides include LiOx, LiNx, NaOx, KOx, RbOx, CsOx, BeOx, MgOx, MgNx, CaOx, CaNx, SrOx, BaOx, ScOx, YOx, YNx, LaOx, La Nx, CeOx, PrOx, NdOx, SmOx, EuOx, GdOx, TbOx, DyOx, HoOx, ErO x, TmOx, YbOx, LuOx, TiOx, TiNx, ZrOx, ZrNx, HfOx, HfNx, ThOx, V Ox, VNx, Nb GrOx, CrNx, MoOx, MoNx, WOx, WNx, MnOx, ReOx, FeOx, FeNx, RuOx, OsOx, CoOx, RhOx, IrOx, NiOx, Pd Ox, PtOx, CuOx, CuNx, AgOx, AuOx, ZnOg, C , BOx, BNx, A10x, AlNx, GaOx, GaNx, InOx, TiOx, TiNx, SiNx, GeOx, SnOx, PbOx, POx, PNx, AsOx, SbOx, SeOx, TeOx and other metal oxides, LiAlO, Li Si

twenty two

O, Li TiO, Na Al O, NaFeO, Na SiO, K SiO, K TiO, K WO, Rb

3 2 3 2 22 34 2 4 4 2 3 2 3 2 4 2

CrO, Cs CrO, MgAl O, MgFe O, MgTiO, CaTiO, CaWO, CaZrO,

4 2 4 2 4 2 4 3 3 4 3

SrFe O, SrTiO, SrZrO, BaAl O, BaFe O, BaTiO, Y A O, Y Fe

12 19 3 3 2 4 12 19 3 3 15 12 3 5

O, LaFeO, LaFeO, LaTiO, CeSnO, CeTiO, SmFeO, EuFeO

12 3 3 5 12 2 2 7 4 4 3 5 12 3

, Eu Fe O, GdFeO, Gd Fe O, DyFeO, Dy Fe O, HoFeO, Ho Fe O

3 5 12 3 3 5 12 3 3 5 12 3 3 5

, ErFeO, Er Fe O, Tm Fe O, LuFeO, Lu Fe O, NiTiO, Al TiO,

12 3 3 5 12 3 5 12 3 3 5 12 3 2 3

FeTiO, BaZrO, LiZrO, MgZrO, HfTiO, NH VO, AgVO, LiVO, Ba

3 3 3 3 4 4 3 3 3

Nb O, NaNbO, SrNb O, KTaO, NaTaO, SrTa O, CuCr O, Ag CrO

2 6 3 2 6 3 3 2 6 2 4 2 4

, BaCrO, K MoO, Na MoO, NiMoO, BaWO, Na WO, SrWO, MnCr

4 2 4 2 4 4 4 2 4 4

O, MnFe O, MnTiO, MnWO, CoFe O, ZnFe O, FeWO, CoMoO,

2 4 2 4 3 4 2 4 2 4 4 4 CuTiO, CuWO, Ag MoO, Ag WO, ZnAl O, ZnMoO, ZnWO, CdSn

3 4 2 4 2 4 2 4 4 4

O, CdTiO, CdMoO, CdWO, NaAlO, MgAl O, SrAl O, Gd Ga O, 1

3 3 4 4 2 2 4 2 4 3 5 12 nFeO, Mgln O, Al TiO, FeTiO, MgTiO, Na SiO, CaSiO, ZrSiO, K

3 2 4 2 5 3 3 2 3 3 4

GeO, Li GeO, Na GeO: BiSnO, MgSnO, SrSnO, PbSiO, PbMoO

2 3 2 3 2 3 2 3 9 3 3 3

, PbTiO, SnO Sb O, CuSeO, Na SeO, ZnSeO, K TeO, K TeO,

4 3 2 2 3 4 2 3 3 2 3 2 4

Examples thereof include metal composite oxides such as Na TeO and Na TeO.

2 3 2 4

[0052] Further, not limited to metal oxides, sulfides such as FeS, Al S, MgS, ZnS, LiF, MgF

twenty three

, Fluoride such as SmF, chloride such as HgCl, FeCl, CrCl, AgBr, CuBr, MnB

2 3 2 3

bromides such as r, iodides such as Pbl, Cul, Fel, or metal oxides such as SiAlON

2 2 2

It may be a nitride and is not particularly limited. Also, not limited to metals and metal compounds, organic materials such as polymer materials such as polyimide, polyamide, polyester, polyacrylate, epoxy resin, phenol resin, and polyvinyl alcohol may be used.

[0053] A method for forming the gate insulating film 54 is not particularly limited, and an appropriate one may be used as appropriate. For example, it is possible to use general thin film forming methods such as vacuum deposition, ion plating, sol-gel method, spin coating method, spray method, CVD, etc., which include sputtering method and CVD method. As long as it is an organic film, it may be formed by a spin coating method, a printing method, a vapor deposition method, or the like.

[0054] The source electrode 58 and the Z or drain electrode 60 are applicable as long as they have sufficient conductivity, and are not particularly limited. For example, Pt, Au, W, Ru, Ir, Al, Sc, Ti , V, Mn, Fe, Co, Ni, Zn, Ga, Y, Zr, Nb, Mo, Tc, Rh, Pd, Ag, Cd, Ln, Sn, Ta, Re, Os, Tl, Pb, La, Ce , Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, etc., or a metal or a compound thereof, or metal oxides such as 、, ΙΖΟ, Organic conductive materials containing conjugated polymer compounds such as polyarines, polythiophenes, and polypyrroles can be used.

[0055] The source electrode 58 and the drain electrode 60 may be manufactured by a general method. A sputtering method, a CVD method, and the like can be mentioned, but an appropriate method may be used as long as it is not particularly limited. For example, general thin film forming methods such as vacuum deposition, ion plating, sol-gel method, spray method, spin coating method, CVD, lift-off, etc. are also possible. [0056] The organic semiconductor 56 is not particularly limited as long as it is an organic material exhibiting semiconductor characteristics such as pentacene. For example, phthalocyanine derivatives, naphthalocyanine derivatives, azo compound derivatives, perylene derivatives, indigo Derivatives, quinacridone derivatives, polycyclic quinone derivatives such as anthraquinones, cyanine derivatives, fullerene derivatives, or indole, carbazole, oxazole, inoxazole, thiazole, imidazole, pyrazole, oxadiazole, pyrazoline Nitrogen-containing cyclic compound derivatives such as thiothiazole and triazole, hydrazine derivatives, triphenylamine derivatives, triphenylmethane derivatives, stilbenes, quinone compound derivatives such as anthraquinone diphenoquinone, anthracene, and bire Polycyclic aromatic compound derivatives such as polyethylene, phenanthrene, coronene, etc., whose structure is used in the main chain of polymers such as polyethylene chain, polysiloxane chain, polyether chain, polyester chain, polyamide chain, polyimide chain, etc. Or an aromatic conjugated polymer such as polyparaphenylene, an aliphatic conjugated polymer such as polyacetylene, or a heterocyclic having a polypinol or polythiophene ratio. Conjugated polymers, heteroatom-conjugated polymers such as polyarines and polyphenylene sulfide, poly (phenylene vinylene), poly (anilenylene vinylene), poly (cellene vinylene), etc. A carbon-based conjugated polymer such as a composite conjugated polymer having a structure in which structural units of the conjugated polymer are alternately bonded is used. Also, oligosilanes such as disila-lene carbon-based conjugated polymer structures such as polysilanes, disila-lenarylene polymers, (disila-lene) etylene polymers, and (disila-diylene) ethylene polymers. Polymers in which carbon and conjugated structures are alternately linked are used. In addition, polymer chains composed of inorganic elements such as phosphorus and nitrogen may be used, and polymers with aromatic ligands of polymer chains such as phthalocyanate polysiloxane, perylene tetracarboxylic acid Organic compounds such as polymers obtained by heat-treating perylenes such as polyacrylamide, ladder-type polymers obtained by heat-treating polyethylene derivatives having a cyano group such as polyacrylo-tolyl, and mouth-bumite. Use an inter-forced composite material.

[0057] A method for forming the organic semiconductor 56 includes a vapor deposition method and the like, but is not particularly limited and may be appropriately selected. For example, ion plating, sol-gel method, It is also possible to use a general thin film forming method such as a spray method or a spin coating method.

[0058] <Interlayer insulating film>

(Interlayer insulation film 72)

The interlayer insulating film 72 is a protective layer that protects the organic transistor 50 with at least one of electromagnetic waves and particle beams. The electromagnetic wave is an electromagnetic wave that damages the layer constituting the organic TFT, and examples thereof include infrared light, visible light, ultraviolet light, and light having a shorter wavelength than visible light. The particle beam is a particle beam that damages the layers constituting the organic TFT, and examples thereof include alpha rays, beta rays, and neutron rays. In addition, to protect at least one of the electromagnetic wave and the particle beam is to protect the organic TFT by shielding at least one of the electromagnetic wave and the particle beam by at least one form of absorption and reflection. It is a concept that includes.

[0059] The protective layer is not particularly limited as long as it has a protective action of at least one of electromagnetic waves and particle beams. It is preferable that the electromagnetic wave to be protected is at least one of an electron beam, visible light, and light having a shorter wavelength than visible light as in this embodiment because these are easy to damage the organic TFT 50. More preferably, the shorter the wavelength, such as blue light, violet light, ultraviolet light, and X-ray, the more easily the organic TFT 50 is damaged. Therefore, it is preferable to protect the organic TFT 50 from these short wavelength light. Sometimes infrared light can also damage the organic TFT50.

[0060] The protective layer is preferably a colored transparent layer or an opaque layer having translucency equal to or less than translucent because it is easy to protect the organic TFT 50 such as an electromagnetic wave, but is not limited thereto. The color is particularly preferably black as darker colors having higher electromagnetic wave absorbability are preferred. As the protective layer, it is preferable that a coloring agent is contained in the resin in order to obtain a colored transparent layer or an opaque layer having a translucent or lower transparency.

[0061] The resin used as a dispersion medium includes polyolefin resin, acrylic resin, cellulose resin, melamine resin, polyester resin, polyamide resin, acrylic resin, and styrene resin. Examples thereof include thermoplastic elastomers such as fat, polyamide, ethylene monoacetate butyl copolymer, vinyl chloride-vinyl acetate copolymer, and styrene-butadiene rubber.

[0062] Colorants such as dyes and pigments in general can be used without being limited. Organic, Various materials can be used regardless of inorganic. For example, bright pigments such as aluminum, brass, evaporated powder, pearl pigment (white, gold, etc.), rhodamine lake B, insoluble azo red pigment (naphthol) (eg, Brilliant Carmel BS, Lake Carmel FB, Lake Credo) 4B, Fast Red FGR, Lake Bold 5B, Toluzimmer Marlon), Insoluble azo red pigment (alide) (eg, pyrazole red), Soluble azo red pigment (eg, Rei Qurange, Brilliant Carmel 3B, Red pigments such as Brilliant Carmel 6B, Brilliant Scarlet G, Lake Red C, Lake Red D, Lake Red R, Lake Bold 10B, Bonmarlon L, Bonmarlon M), Heise Yellow A, inert azo yellow pigment (a-lid type) (E.g., First Yellow G, First Yellow 10G, Gazo Orange) Yellow pigments such as pigment lake yellow pigments (eg yellow lake), phthalocyanine blue pigments (eg phthalocyanine blue, fast sky blue), dye lake blue pigments (eg nano lake, blue lake), Blue pigments such as other pigments (for example, alkali blue), black pigments such as carbon black, acetylene black, lamp black, and aniline black, rutile type acid titanium and anatase type acid titanium may be misaligned. Examples thereof include inorganic fillers such as titanium oxide, silica, alumina, clay, talc, calcium carbonate and barium sulfate, and white pigments such as zinc oxide.

[0063] These colorants can be selected from carbon black, organic colorants, inorganic colorants, and the like, depending on the required color tone, and can be used alone or in combination of two or more. It can also be used by adjusting the above to the desired hue.

[0064] The protective layer may be colorless and transparent as long as it is a layer containing a light absorber such as an ultraviolet absorber or a particle beam absorber. If the coloring and the ultraviolet absorber are used in combination, it is more effective. For example, it is preferable to contain an ultraviolet absorber. Ultraviolet absorbers such as cinnamic acid, para-aminobenzoic acid (PABA), camphor derivatives, Bennophenone, Bunzoylmeyhane, etc. Other examples include acid titanium, zinc oxide, iron oxide, acid cerium, acid zirconium, my strength, kaolin, cerite, benzotriazol and cyanoacrylate. It is done.

[0065] Examples of the above-mentioned Benzophenone type include 2,3'-dihydroxy-4,4 ' Mention may be made of methoxybenzophenone, 2,2'-dihydroxy-4-methoxybenzophenone and 2,2 ', 4,4'-tetrahydroxybenzophenone.

[0066] Examples of the above benzotriazole-based compounds include 2- (2'-hydroxy-5'methylphenol) benzotriazole, 2- (2'-hydroxy-5'methylphenol)-5, 6 Dichlorbenzotriazole), 2— (2 ′ —Hydroxyl 5 ′ —t—Butylphenol), Benzotriazole, 2— (2 ′ —Hydroxyl 3 ′ —Methyl-5 ′ — t—Butylphenol ) Benzotriazole, 2— (2 ′ —hydroxyl 3 ′, 5 ′ —di-t-butylphenol) —5 chloro-benzotriazole and 2— (2 ′ —hydroxy—5 ′ —phenol 1) Chlorbenzotriazol, 2— (2 '— Hydroxy 1 3', 5 '— Di-t-butylphenol) 1 5 Chlorobenzotriazole, 2 — (2' — Hydroxy 1 3 '— T — Butyl 5' — Methyl phenol) 1 5 Black Benzotriazole, 2 — (2 '— Hydro 3 ′, 5 ′ —di-tert-amylphenol) benzotriazole, 2— (2 ′ —hydroxyl 3 ′, 5 ′ —di-t-butylphenol) benzotriazole, 2— (2 '—Hydroxy— 5' —t—Octylphenol) benzotriazole, 2— {2 '—Hydroxy 1 3 ′ — (3 g, 4 ", 5 ,,, 6 ,, —tetrahydrophthalimidomethyl) 5, — Methylphenol} benzotriazole, 2— {2 Hydroxy-3,5 bis (α, '—dimethylbenzyl) phenol} 2 —Hydroxybenzotriazole, 2- (2-hydroxy-1-octyl) Oxyphenyl) 2H-benzotriazole, etc. Examples of the above-mentioned cyanoacrylates include, for example, ethyl-2-cyanol 3,3 diphenyl acrylate, 2 ethylhexyl 2ciano 3, 3 Diphenyl atrelate.

[0067] The protective layer is preferably a reflective layer having a metallic luster such as metal, a specularity and a reflection property, but is not limited thereto. Moreover, even if it is not a metal, a metallic luster may be imparted with a metallic printing ink such as silver or gold to which a metal pigment such as aluminum paste powder is added.

[0068] For example, for inorganic materials, the protective layer is LiOx, LiNx, NaOx, KOx, RbOx, CsOx, BeOx, MgOx, MgNx, CaOx, CaNx, SrOx, BaOx, ScOx, YOx, YNx, LaOx, LaNx, CeOx , PrOx, NdOx, SmOx, EuOx, GdOx, TbOx, DyOx, HoOx, ErOx, TmOx, YbOx, LuOx, TiOx, TiNx, ZrOx, ZrNx, HfOx, HfNx, ThO x, VOx, VNx, NbOx, TaOx, TaNx, CrOx, CrNx, MoOx, MoNx, WOx, W Nx, MnOx, ReOx, FeOx, FeNx, RuOx, OsOx, CoOx, RhOx, IrOx, NiOx, PdOx, Pt , CuNx, AgOx, AuOx, ZnOx, CdOx, HgOx, BOx, B Nx, A10x, AlNx, GaOx, GaNx, InOx, TiOx, TiNx, SiNx, GeOx, SnOx, P bOx, POx, PNx, AsOx, Sbx , Metal oxides such as TeOx, LiAlO, L

2 i SiO, Li TiO, Na Al O, NaFeO, Na SiO, K SiO, K TiO, K WO,

2 3 2 3 2 22 34 2 4 4 2 3 2 3 2 4

Rb CrO, Cs CrO, MgAl O, MgFe O, MgTiO, CaTiO, CaWO, CaZr

2 4 2 4 2 4 2 4 3 3 4

O, SrFeO, SrTiO, SrZrO, BaAlO, BaFeO, BaTiO, YAO, Y

3 12 19 3 3 2 4 12 19 3 3 15 12

Fe O, LaFeO, La Fe O, La Ti O, CeSnO, CeTiO, Sm Fe O, Eu

3 5 12 3 3 5 12 2 2 7 4 4 3 5 12

FeO, Eu Fe O, GdFeO, Gd Fe O, DyFeO, Dy Fe O, HoFeO, Ho

3 3 5 12 3 3 5 12 3 3 5 12 3 3

Fe O, ErFeO, Er Fe O, Tm Fe O, LuFeO, Lu Fe O, NiTiO, Al

5 12 3 3 5 12 3 5 12 3 3 5 12 3 2

TiO, FeTiO, BaZrO, LiZrO, MgZrO, HfTiO, NH VO, AgVO, LiVO

3 3 3 3 3 4 4 3 3

, BaNb O, NaNbO, SrNb O, KTaO, NaTaO, SrTa O, CuCr O, Ag

3 2 6 3 2 6 3 3 2 6 2 4 2

CrO, BaCrO, K MoO, Na MoO, NiMoO, BaWO, Na WO, SrWO,

4 4 2 4 2 4 4 4 2 4 4

MnCr O, MnFe O, MnTiO, MnWO, CoFe O, ZnFe O, FeWO, CoM

2 4 2 4 3 4 2 4 2 4 4 oO, CuTiO, CuWO, Ag MoO, Ag WO, ZnAl O, ZnMoO, ZnWO, C

4 3 4 2 4 2 4 2 4 4 4 dSnO, CdTiO, CdMoO, CdWO, NaAlO, MgAl O, SrAl O, Gd Ga O

3 3 4 4 2 2 4 2 4 3 5

, InFeO, Mgln O, Al TiO, FeTiO, MgTiO, Na SiO, CaSiO, ZrSiO

12 3 2 4 2 5 3 3 2 3 3

, K GeO, Li GeO, Na GeO ,: Bi Sn O, MgSnO, SrSnO, PbSiO, Pb

4 2 3 2 3 2 3 2 3 9 3 3 3

MoO, PbTiO, SnO— SbO, CuSeO, Na SeO, ZnSeO, K TeO, K Te

4 3 2 2 3 4 2 3 3 2 3 2

Even metal complex oxides such as O, Na TeO, Na TeO, FeS, Al S, MgS, ZnS

4 2 3 2 4 2 3

Which sulfide, fluoride such as LiF, MgF, SmF, salt such as HgCl, FeCl, CrCl

2 3 2 3

, Bromides such as AgBr, CuBr, MnBr, iodides such as Pbl, Cul, Fel, or S

2 2 2

Even materials such as iAION mixed with colored materials in metal oxynitrides are also effective. In addition, the organic material may be a material obtained by coloring polyimide, polyamide, polyester, polyacrylate, epoxy resin, phenol resin, polybulal alcohol, or the like or mixing an ultraviolet absorber.

The method of forming the protective layer is to avoid damaging the organic TFT 50 as much as possible. It is preferable to manufacture by a method that does not emit a light beam having a wavelength shorter than that of a strand, electromagnetic wave, particularly visible light. For example, it can be formed by a method using a general thin film forming method such as a sol-gel method, a spray, or a spin coating method.

[0070] (Interlayer insulating film 74)

The interlayer insulating film 74 may be formed at the same time as the interlayer insulating film 74 at the right end of the organic EL element 100 or may be formed individually. The material for forming each interlayer insulating film is not particularly limited, and the type thereof may be different between the interlayer insulating film 72 on the organic TFT and the interlayer insulating film 74 at the right end of the organic EL element. Further, the interlayer insulating film 74 can be omitted as appropriate.

[0071] The material for forming the interlayer insulating film 74 is not particularly limited, but any insulating material such as an inorganic material or an organic material can be used. For example, LiOx, LiNx, NaOx, KOx, RbOx, Cs Ox, BeOx, MgOx, MgNx, CaOx, CaNx, SrOx, BaOx, ScOx, YOx, YNx, LaOx, LaNx, CeOx, PrOx, NdOx, SmOx, G TbOx, DyOx, HoOx, ErOx, TmOx, YbOx, LuOx, TiOx, TiNx, ZrOx, ZrNx, HfOx, HfNx, ThOx, VOx, VNx, NbOx, TaOx, TaNx, Ox, CrNx, MoO, WNx, MnOx, ReOx, FeOx, FeNx, RuOx, OsOx, CoOx, RhOx, IrOx, NiOx, PdOx, PtOx, CuOx, CuNx, AgOx, AuOx, ZnOx, CdOx, HgOx, BOx, BNx, Ax Metal oxides such as GaNx, InOx, TiOx, TiNx, SiNx, GeOx, SnOx, PbOx, POx, PNx, AsOx, SbOx, SeOx, TeOx, LiAlO, Li SiO, Li TiO, Na Al O, NaFeO, Na SiO , K SiO, K TiO

2 2 3 2 3 2 22 34 2 4 4 2 3 2 3

, K WO, Rb CrO, Cs CrO, MgAl O, MgFe O, MgTiO, CaTiO, CaW

2 4 2 4 2 4 2 4 2 4 3 3

O, CaZrO, SrFe O, SrTiO, SrZrO, BaAl O, BaFe O, BaTiO, Y

4 3 12 19 3 3 2 4 12 19 3 3

A O, Y Fe O, LaFeO, La Fe O, La Ti O, CeSnO, CeTiO, Sm Fe

15 12 3 5 12 3 3 5 12 2 2 7 4 4 3

O, EuFeO, EuFeO, GdFeO, GdFeO, DyFeO, DyFeO, HoF

5 12 3 3 5 12 3 3 5 12 3 3 5 12 eO, Ho Fe O, ErFeO, Er Fe O, Tm Fe O, LuFeO, Lu Fe O, Ni

3 3 5 12 3 3 5 12 3 5 12 3 3 5 12

TiO, Al TiO, FeTiO, BaZrO, LiZrO, MgZrO, HfTiO, NH VO, AgV

3 2 3 3 3 3 3 4 4 3

O, LiVO, BaNb O, NaNbO, SrNb O, KTaO, NaTaO, SrTa O, CuC

3 3 2 6 3 2 6 3 3 2 6 r O, Ag CrO, BaCrO, K MoO, Na MoO, NiMoO, BaWO, Na WO,

2 4 2 4 4 2 4 2 4 4 4 2 4

SrWO, MnCr O, MnFe O, MnTiO, MnWO, CoFe O, ZnFe O, FeW

4 2 4 2 4 3 4 2 4 2 4 O, CoMoO, CuTiO, CuWO, Ag MoO, Ag WO, ZnAl O, ZnMoO, Z

4 4 3 4 2 4 2 4 2 4 4 nWO, CdSnO, CdTiO, CdMoO, CdWO, NaAlO, MgAl O, SrAl O,

4 3 3 4 4 2 2 4 2 4

Gd Ga O, InFeO, Mgln O, Al TiO, FeTiO, MgTiO, Na SiO, CaSi

3 5 12 3 2 4 2 5 3 3 2 3

O, ZrSiO, K GeO, Li GeO, Na GeO ,: Bi Sn O, MgSnO, SrSnO, Pb

3 4 2 3 2 3 2 3 2 3 9 3 3

SiO, PbMoO, PbTiO, SnO—SbO, CuSeO, Na SeO, ZnSeO, K Te

3 4 3 2 2 3 4 2 3 3 2

Metal complex oxides such as O, K TeO, Na TeO, Na TeO, FeS ゝ Al S, Mg

3 2 4 2 3 2 4 2 3

Sulfides such as S and ZnS, fluorides such as LiF, MgF, and SmF, HgCl, FeCl, CrCl

2 3 2 3 Which chloride, bromide such as AgBr, CuBr, MnBr, iodide such as Pbl, Cul, Fel

2 2 2

It is also effective with metal oxynitrides such as SiAlON. Polymer materials such as polyimide, polyamide, polyester, polyacrylate, epoxy resin, phenol resin, and polybulal alcohol may also be used! /.

[0072] <Protective film>

The protective film 20 may have a multilayer structure, a single-layer structure, an inorganic film, or an organic film. However, if an inorganic film is included, the protective film 20 is caused by moisture, oxygen, or the like. This is preferable because the barrier property against erosion is improved.

[0073] As the inorganic film, for example, a nitride film, an oxide film, a carbon film, a silicon film, or the like can be employed. More specifically, a silicon nitride film, a silicon oxide film, a silicon oxide film, or the like can be used. Examples include nitride films, diamond-like carbon (DLC) films, and amorphous carbon films. That is, nitrides such as SiN, A1N, and GaN, oxides such as SiO, Al 2 O, Ta 2 O, ZnO, and GeO

2 3 2 5

[0074] Examples of the organic film include a furan film, a pyrrole film, a thiophene film, or a polyparaxylene film, an epoxy resin, an acrylic resin, a polyparaxylene, a fluorine-based polymer (perfluoroolefin, perfluoronole ether, tetrafanol). Fluoroethylene, chlorotrifluoroethylene, dichlorodifluoroethylene, etc.), metal alkoxides (CHOM, CHOM, etc.),

3 2 5

[0075] The protective film 20 has a laminated structure composed of two or more kinds of substances, an inorganic protective film, a silane coupling layer, a laminated structure composed of a resin sealing film, a barrier layer composed of an inorganic material cover, an organic material cover. Be angry Laminated structure with cover layer force, Si-CXHY or other metal or compound of semiconductor and organic material, laminated structure of inorganic material, structure of alternately laminated inorganic film and organic film, Si O or Si on Si layer Examples thereof include a laminated structure such as a structure in which N is laminated.

2 3 4

The nolia film 12 and the protective film 20 fill the surface irregularities of the pinholes in which the organic film is formed on the inorganic film and flatten the surface. It may also play a role in relieving the film stress of the inorganic film.

[0077] A method for manufacturing the protective film 20 includes a sputtering method, a CVD method, and the like, but is not particularly limited, and an appropriate one may be used as appropriate. For example, general thin film forming methods such as vacuum deposition, ion plating, sol-gel method, spray method, spin coating method, and CVD are also possible.

The insulating film 72 and the protective film 20 do not prevent other layers from being formed therebetween. The term “formed on the layer and on the surface of the layer” is a concept including both forming directly on the surface as long as it is the upper layer of the layer or indirectly through another layer. is there.

[0079] <Light emitting mode of organic EL display device>

The light emission mode of the organic EL display device P1 will be described.

When a voltage is applied between the gate electrode 52 and the source electrode 58, holes are generated at the interface between the organic semiconductor 56 and the gate insulating film 54 (region of about several nm). When holes are generated and a voltage is applied between the source electrode 58 and the drain electrode 60, the holes can be transported. On the other hand, holes are not transported unless a voltage is applied between the gate electrode 52 and the source electrode 58. In this way, switching can be performed using the non-conduction state (the switch is off) and the conduction state (the switch is on).

Holes (holes) are supplied from the source electrode 58 to the drain electrode 60 through the gate insulating film 54. Holes are transferred to the anode 14 of the organic EL element 100 through the drain electrode 60.

In the organic EL element 100, holes are transported from the anode 14 to the hole injection layer 162 in the organic solid layer 16. The transported holes are injected into the hole transport layer 164. The holes injected into the hole transport layer 164 are transported to the light emitting layer 166.

[0083] In the organic EL element 100, electrons are injected into the organic solid layer 16 even when the cathode has 18 forces. Transported to 168. The transported electrons are injected into the electron transport layer 167. The transported electrons are transported to the light emitting layer 166.

[0084] The transported holes and electrons recombine in the light-emitting layer 166. During recombination, EL emits light due to the energy generated. This light emission is led out to the outside through the hole transport layer 164, the hole injection layer 162, the anode 14, the noria film 12, and the substrate 10 in this order, and the light emission can be visually recognized.

[0085] In the case where A1 is used for the cathode 18, the interface between the cathode layer 18 and the electron transport layer 168 becomes a reflection surface, is reflected at this interface, travels to the anode 14 side, and passes through the substrate 10. And injected outside. Therefore, when the organic EL element having the above configuration is used for a display or the like, the substrate 10 side becomes the display observation surface.

[0086] For example, when a full color display is to be realized with an organic EL panel, for example, a method of manufacturing organic EL elements that emit RGB colors by painting (painting method), a white light emitting monochromatic light emitting organic A combination of an EL element and a color filter (color filter method), a combination of a single color emission organic EL element such as blue light emission or white emission and a color conversion layer (color conversion method), a single color organic EL element In addition, a method (photo bleaching method) for realizing a plurality of light emission by irradiating the organic light emitting layer with an electromagnetic wave or the like can be mentioned, but it is not particularly limited.

In this embodiment, since the protective layer is provided, it is possible to protect the organic TFT by at least one of the electromagnetic wave and the particle beam that cause damage to the organic TFT. Therefore, the reliability can be ensured even if the organic EL display device P1 uses electromagnetic waves that damage organic TFTs, other manufacturing processes that use particle beams, and long-term use by consumers.

[0088] "Method for manufacturing organic EL display device"

A method for manufacturing the organic EL display device P1 shown in FIG. 2 will be described. A barrier film 12 is formed on the substrate 10, and a portion excluding the cathode 18 of the organic EL element 100 and the organic TFT 50 are formed on the noria film 12. The drain electrode 60 of the organic TFT 50 and the anode 14 of the organic EL element 100 are fabricated so as to be in electrical contact with each other.

Next, a layer is formed so as to cover the surface of the organic TFT 50, which is the left edge of the organic EL element 100 in the drawing. An inter-layer insulating film 72 is formed. Further, an interlayer insulating film 74 is formed so as to include the anode 14 at the right edge of the organic EL element 100 in the drawing.

[0090] After these interlayer insulating films are formed, the cathode 18 of the organic EL element 100 is formed. This formation is performed by extending the film to cover the interlayer insulating film 74.

[0091] After the cathode 18 is formed, the protective film 2 is formed so as to cover the surfaces of the cathode 18 and the interlayer insulating film 72.

O is formed to manufacture the organic EL display device P1.

[0092] In the present embodiment, the protective film 20 is formed particularly when the protective film 20 generates a particle beam such as light having a shorter wavelength than visible light such as ultraviolet rays or secondary electrons such as a vacuum process such as CVD. Since the interlayer insulating film 72, which is a layer, protects against at least one of the electromagnetic wave and the particle beam that damage the organic TFT 50, it is possible to provide an organic EL display device P1 including the organic TFT 50 with little damage. it can.

[0093] Each layer is added with additives such as waxes, antioxidants, heat stabilizers, leveling agents, coupling agents, etc., and modifiers as necessary, so long as the properties of the layers to be added are not impaired. It ’s a lot.

[0094] The manufacturing method of each layer includes, for example, gravure coating, gravure reverse coating, comma coating, die coating, lip coating, cast coating, roll coating, air knife coating, Mayer bar coating, extrusion coating, and offset. , UV curing offset, flexo, stencil, silk, curtain flow coating, wire bar coating, reverse coating, gravure coating, kiss coating, blade coating, smooth coating, spray coating, flow coating, brush coating, etc. Applicable. In addition to coating the lower layer as a dry film, two layers of the lower layer and the upper layer can be applied in a wet state and force-dried.

[0095] “Other embodiment 1”

FIG. 5 shows an organic EL display device P2 of another embodiment 1 according to this embodiment. Hereinafter, the same reference numerals are assumed to be the same as those in the above embodiment, and the description thereof is omitted.

The organic EL element 100 is disposed on the organic TFT 50 at a position that is not in series with the organic TFT 50, and the organic EL element 100 and the organic TFT 50 are covered with the protective film 20. The drain electrode 60 and the anode 14 are formed by transporting holes provided in the interlayer insulating film 72. It is electrically connected by a through hole 80 which is a road.

As in the above embodiment, the protective layer is the interlayer insulating film 72. By providing the interlayer insulating film 72 having the action of protecting the organic transistor 50 by at least one of the electromagnetic wave and the particle beam, the organic TFT can be protected from the electromagnetic wave damage to the organic TFT. Therefore, the reliability can be ensured even if the organic EL display device P2 uses electromagnetic waves that cause damage to the organic TFT, or is used for a long time by consumers.

A method for manufacturing the organic EL display device P2 will be described. A barrier film 12 is formed on the substrate 10 to produce an organic TFT 50. An interlayer insulating film 72 is formed so as to cover the surface of the organic TFT 50, and a through hole 80 is formed. Next, the anode 14 is formed, and the organic EL element 100 is formed thereon. Here, a through hole 80 is provided so that the drain electrode 60 of the organic TFT 50 and the anode 14 of the organic EL element 100 are electrically connected.

[0099] The protective film 20 is formed so as to cover the surfaces of the organic EL element 100 and the interlayer insulating film 72, and the organic EL display device P2 is manufactured.

[0100] In the present embodiment, in particular, the method for forming the protective film 20 is likely to generate a particle beam such as light having a shorter wavelength than visible light such as ultraviolet rays or secondary electrons such as a vacuum process such as CVD. The protective interlayer 72 protects the organic TFT50 from at least one of the electromagnetic wave and particle beam that damages the organic TFT50, so there is little damage! / Provides the organic EL display device P2 including the organic TFT50 be able to.

[0101] "Other embodiment 2"

FIG. 6 shows an organic EL display device P3 of another embodiment 2 according to this embodiment.

[0102] The driving transistor 59 is disposed on the organic TFT 50 at a position that is not in series, and the organic EL element 100 is disposed on the driving transistor 59. The organic EL element 100 and the organic TFT 50 are covered with the protective film 20. Yes. The driving transistor 59 is not particularly limited, but is preferably an electrostatic induction transistor (SIT) as in this embodiment. The driving transistor 59 includes a lower layer side source electrode 57 / gate electrode 51Z drain electrode (the anode 14 of the organic EL element 100).

[0103] The drain electrode 60 and the source electrode 57 of the driving transistor 59 are in the interlayer insulating film 72. Are electrically connected by through-holes 80, which are hole transport routes provided in.

In another embodiment 2, the protective layer is the interlayer insulating film 72. Therefore, the provision of the interlayer insulating film 72 makes the organic EL display device P3 more reliable even in other manufacturing processes and long-term use by consumers that use electromagnetic waves that damage organic TFTs. It can be secured.

[0105] A method for producing the organic EL display device P3 will be described. A barrier film 12 is formed on the substrate 10 to produce an organic TFT 50. An interlayer insulating film 72 is formed so as to cover the surface of the organic TFT 50, and a through hole 80 is formed. Next, a driving transistor 59 is formed. Here, a through hole 80 is provided so that the drain electrode 60 of the organic TFT 50 and the source electrode 57 of the driving transistor 59 are electrically connected. An organic EL element 100 is formed on the driving transistor 59.

A protective film 20 is formed so as to cover the organic EL element 100, the driving transistor 59, and the interlayer insulating film 72, and the organic EL display device P3 is manufactured.

In the present embodiment, in particular, the protective film 20 is formed by a method such as a vacuum process such as CVD, which tends to generate light beams having a shorter wavelength than visible light such as ultraviolet rays and particle beams such as secondary electrons. The protective interlayer 72 protects the organic TFT50 from at least one of the electromagnetic waves and particle beams that damage the organic TFT50. Therefore, there is little damage! / Provides the organic EL display device P3 including the organic TFT50 be able to.

[0108] "Organic transistor"

In the above embodiment, the organic EL display device including the organic EL element is shown. However, the organic transistor that drives other than the organic EL element is not limited to this, and the organic transistor is protected by the protective layer according to the present embodiment. Structure is applicable. That is, in the above embodiment, the organic EL element may be replaced by a driving element such as an organic EL element which may be replaced with a driving element driven by another organic transistor. It is only necessary that a protective film is formed on the protective layer on the surface layer, whether directly or indirectly.

[0109] Such organic transistors are generally used in displays, such as liquid crystal displays and electrical displays. It can also be applied to electrophoretic displays, electronic paper, toner displays, and the like.

Example

[0110] An organic EL display device P1 as an example was manufactured and compared with a conventional organic EL display device.

[0111] "Production method"

The materials of the examples are as follows.

[0112] Source Z drain electrode: CrZAu

Gate electrode: Ta, Gate insulating film: Ta O

twenty five

Interlayer insulation film: Black polymer with UV absorber

Organic semiconductor: Pentacene

Organic EL anode: ITO

Organic EL organic solid layer: hole injection layer (CuPc)

: Hole transport layer (NPB)

: Light emitting layer (Alq)

Three

: Electron transport layer (Alq)

Three

: Electron injection layer (Li 2 O)

2

Organic EL cathode: A1

Protective film: SiNx

The manufacturing method of an Example is as follows. On the cleaned plastic film substrate, a gate electrode Ta film was patterned with a thickness of 2000 A and a width of 20 m. A Ta O film was formed by applying a positive acid to the Ta wiring film, and a gate insulating film Ta O (relative dielectric constant: 24) was formed.

2 5 2 5

. After that, an Au film with Cr as an adhesive layer was patterned as the source Z drain electrode. After that, the organic EL anode ITO was patterned so as to be connected to the drain electrode of the organic transistor. Thereafter, a black polymer was formed as an interlayer insulating film so as to completely cover the organic transistor. At the same time, this black polymer containing an ultraviolet absorber was also patterned around the anode of the organic EL device to form a short-circuit prevention film between the cathode and the anode of the organic EL device. The organic EL element organic layer and the cathode were sequentially formed, and finally SiNx was formed by plasma CVD as a protective film.

[0113] In the manufacturing method of the comparative example, an interlayer insulating film is formed on an organic TFT, but an ultraviolet absorber is added. These are colorless and transparent interlayer insulating films, and the others are the same as in the examples.

[0114] "Evaluation"

Table 1 below shows the results of comparing the semiconductor characteristics (mobility, on / off characteristics) of the organic TFT fabricated in the examples with those of the comparative example.

[0115] [Table 1]

"Discussion"

In the organic EL display device of the example, better semiconductor characteristics (mobility and on / off characteristics) were obtained compared to the comparative example.

Claims

The scope of the claims

[1] An organic EL display device including an organic EL element including at least an anode, an organic light emitting layer, and a cathode, and an organic transistor that drives the organic EL element,

A protective film that covers the organic transistor and protects at least the organic transistor;

An organic EL display device in which a protective layer for protecting the organic transistor is formed between the protective film and the surface of the organic transistor, at least one of electromagnetic waves and particle beams.

[2] The organic EL display device according to claim 1,

The organic EL display device, wherein the electromagnetic wave is at least one of infrared light, visible light, and ultraviolet light.

[3] The organic EL display device according to claim 1 or 2,

The organic EL display device, wherein the particle beam is at least one of alpha rays, beta rays, and neutron rays.

[4] The organic EL display device according to any one of claims 1 to 3,

The organic EL display device, wherein the protective layer is a colored transparent layer or an opaque layer.

[5] The organic EL display device according to any one of claims 1 to 4,

The organic EL display device, wherein the protective layer is an absorptive layer that absorbs at least one of electromagnetic waves and particle beams.

[6] The organic EL display device according to any one of claims 1 to 5,

The organic EL display device, wherein the protective layer is a reflective layer having reflectivity for at least one of electromagnetic waves and particle beams.

[7] A method of manufacturing an organic EL display device including an organic EL element including at least an anode, an organic light emitting layer, and a cathode, and an organic transistor that drives the organic EL element,

A protective layer forming step of forming a protective layer for protecting the organic transistor on at least one of electromagnetic wave and particle beam on the surface of the organic transistor;

A protective film forming step of forming a protective film for protecting the organic transistor on the protective layer.

[8] The method of manufacturing an organic EL display device according to claim 7,

The method for manufacturing an organic EL display device, wherein the electromagnetic wave is at least one of infrared light, visible light, and ultraviolet light.

[9] The method of manufacturing an organic EL display device according to claim 7 or 8,

The method of manufacturing an organic EL display device, wherein the particle beam is at least one of alpha rays, beta rays, and neutron rays.

10. The method for manufacturing an organic EL display device according to any one of claims 7 to 9, wherein the protective layer is a colored transparent layer or an opaque layer.

[11] The method of manufacturing an organic EL display device according to any one of claims 7 to 10, wherein the protective layer is an absorptive layer that absorbs at least one of electromagnetic waves and particle beams. Manufacturing method of EL display device.

[12] The method of manufacturing an organic EL display device according to any one of claims 7 to 11, wherein the protective layer is a reflective layer having reflectivity for at least one of electromagnetic waves and particle beams. A method for manufacturing an organic EL display device.

[13] An organic transistor,

An organic transistor that covers the organic transistor and includes a protective film that protects the organic transistor, and a protective layer that protects the organic transistor from electromagnetic waves is formed between the protective film and the surface of the organic transistor. .

[14] The organic transistor according to claim 13,

The electromagnetic wave is an organic transistor that is at least one of infrared light, visible light, and ultraviolet light.

[15] The organic transistor according to claim 13 or 14,

The particle beam is an organic transistor that is at least one of alpha rays, beta rays, and neutron rays.

[16] The organic transistor according to any one of claims 13 to 15,

The protective layer is an organic transistor that is a colored transparent layer or an opaque layer.

[17] An organic transistor according to any one of claims 13 to 16,

The protective layer is an absorptive layer that absorbs at least one of electromagnetic waves and particle beams. Organic transistor.

[18] The organic EL display device according to any one of claims 13 to 17,

The organic transistor, wherein the protective layer is a reflective layer having reflectivity for at least one of electromagnetic waves and particle beams.

[19] A method for producing an organic transistor comprising:

A protective layer forming step for forming a protective layer for protecting the organic transistor from the electromagnetic wave on the surface of the organic transistor;

[20] The method for producing an organic transistor according to claim 19,

The method for producing an organic transistor, wherein the electromagnetic wave is at least one of infrared light, visible light, and ultraviolet light.

[21] The method for producing an organic transistor according to claim 19 or 20,

The method for producing an organic transistor, wherein the particle beam is at least one of alpha rays, beta rays, and neutron rays.

[22] The method for producing an organic transistor according to any one of claims 19 to 21, wherein the protective layer is a colored transparent layer or an opaque layer.

[23] The method for producing an organic transistor according to any one of claims 19 to 22, wherein the protective layer is an absorptive layer that absorbs at least one of electromagnetic waves and particle beams. Production method.

[24] The method for producing an organic transistor according to any one of claims 19 to 23, wherein the protective layer is a reflective layer having reflectivity for at least one of electromagnetic waves and particle beams. Manufacturing method of organic transistor.