JPWO2006106826A1 - Organic EL display device, organic transistor, and manufacturing method thereof - Google Patents

Abstract

Provided are an organic EL display device in which the performance deterioration of the organic transistor is less, a manufacturing method of the organic EL display device, an organic transistor, and a manufacturing method of the organic transistor. The organic EL display device P <b> 1 includes a protective film 20 that covers the organic transistor 50 and protects the organic transistor 50. An interlayer insulating film 72 is formed between the protective film 20 and the surface of the organic transistor 50 as a protective layer that protects the organic transistor from at least one of electromagnetic waves and particle beams.

Description

  The present invention relates to an organic EL display device, a method for manufacturing an organic EL display device, an organic transistor, and a method for manufacturing an organic transistor.

  Organic transistors are used in various applications. For example, it is used as means for driving an organic EL element in an organic EL display device.

  An organic EL device includes an electrode and an organic solid layer having at least a light emitting layer between the electrodes, and injects electrons and holes from the electrodes on both sides into the light emitting layer in the organic solid layer. It is an element that causes light emission, and can emit light with high brightness. In addition, since it uses light emission of an organic compound, it has characteristics such as a wide selection range of emission colors, and is expected as a light source or an organic EL display device. In particular, an organic EL display device is generally expected as a flat panel display having a wide field of view, high contrast, high-speed response and visibility, thin and light, and low power consumption.

  The organic EL display device includes a pixel composed of an organic EL element including at least an anode, an organic light emitting layer, and a cathode, and an organic transistor that lights and controls the organic EL element. In an organic EL display device, a passive matrix system in which organic EL elements arranged in a matrix form are driven from the outside by stripe-shaped scanning electrodes and data electrodes (signal electrodes) orthogonal to each other, and a thin film transistor (hereinafter also referred to as TFT) for each pixel. And an active matrix system in which an organic EL element is lit.

  In an organic EL display device, in general, an active matrix method in which an organic EL element is driven by a TFT (Thin Film Transistors) is more advantageous than a passive matrix method as the number of pixels increases. This is because in the passive matrix method, the organic EL element of each pixel is lit only during the period when the scanning electrode is selected, and as the number of pixels increases, the lighting period of the organic EL element becomes shorter and the average luminance tends to decrease. On the other hand, the active matrix system has a switching element and a memory element made up of TFTs for each pixel, so that the lighting state of the organic EL element is maintained, and operation with high brightness, high efficiency and long life is possible. This is because the display tends to be advantageous for high definition and large size.

  In addition, by adopting organic TFTs as the TFTs, it is expected to reduce costs, reduce environmental loads, or realize flexible displays.

  By the way, organic EL elements and organic TFTs are susceptible to erosion due to moisture and oxygen in the air, and in the presence of these elements, degradation such as dark spots or short-circuiting of the elements may occur. In order to prevent such deterioration, it is necessary to provide a means for protecting the element from erosion due to moisture or oxygen in the air. Currently, the entire element is covered with a cover glass or can package in an atmosphere such as dry nitrogen or argon gas. A method of sealing with, for example, is used.

  However, such a sealing method using glass, cans, etc. is expensive to manufacture, and there are cases where there is a limit to thinning the element. Therefore, a structure in which an organic ELEL element and an organic TFT are covered with a protective film having a moisture-proof function without using glass or a can package has been proposed as shown in Patent Document 1 below.

FIG. 1 shows an organic EL display device PA according to the background art. The organic EL display device PA includes a substrate 10, a barrier film 12 formed on the substrate 10, an organic EL element 100 and an organic TFT 50 formed on the barrier film 12, and a protection covering the organic EL element 100 and the organic TFT 50. A film (passivation film) 20.
JP 2003-255857 A

  However, for example, when the protective film is formed by a vacuum process such as a CVD method, it is shorter than electromagnetic waves generated from plasma generated at the time of film formation, particle beams, for example, visible light such as alpha rays, beta rays, and ultraviolet rays. Even with light of a wavelength, sometimes visible light, and infrared light, the organic layer constituting the organic TFT may be damaged, and the performance of the organic TFT may deteriorate.

  In addition, even after the production of the protective film, electromagnetic waves and particle beams generated in manufacturing processes using other plasmas, and when used by consumers, the organic layers constituting the organic TFT are damaged by electromagnetic waves. Performance may be degraded.

  The present invention has been made in view of the above-mentioned problems, and mainly provides an organic EL display device in which performance deterioration of the organic transistor is less, a method for manufacturing the organic EL display device, an organic transistor, and a method for manufacturing the organic transistor. With a purpose.

  The invention according to claim 1 is an organic EL display device including an organic EL element including at least an anode, an organic light emitting layer, and a cathode, and an organic transistor for driving the organic EL element, and covers the organic transistor, A protective film that protects the organic transistor is provided, and a protective layer that protects the organic transistor from at least one of electromagnetic waves and particle beams is formed between the protective film and the surface of the organic transistor. And

  The invention according to claim 7 is a method of manufacturing an organic EL display device including an organic EL element including at least an anode, an organic light emitting layer, and a cathode, and an organic transistor for driving the organic EL element, on the surface of the organic transistor A protective layer forming step of forming a protective layer for protecting the organic transistor from at least one of electromagnetic waves and particle beams, and a protective film forming step of forming a protective film for protecting the organic transistor on the protective layer; It is characterized by including.

  The invention according to claim 13 is an organic transistor comprising a protective film that covers the organic transistor and protects at least the organic transistor, and between the protective film and the surface of the organic transistor, A protective layer for protecting the organic transistor from at least one of the particle beam is formed.

  The invention according to claim 19 is a method for producing an organic transistor, comprising: a protective layer forming step of forming a protective layer that protects the organic transistor from at least one of electromagnetic waves and particle beams on the surface of the organic transistor; And a protective film forming step of forming a protective film for protecting the organic transistor on the protective layer.

It is typical sectional drawing of the organic electroluminescence display in a prior art. It is typical sectional drawing of the organic electroluminescence display in this embodiment. It is a typical enlarged view near the organic EL element of the organic EL display device in the present embodiment. It is a typical enlarged view near organic TFT of the organic electroluminescence display in this embodiment. It is typical sectional drawing of the organic electroluminescence display in this embodiment. It is typical sectional drawing of the organic electroluminescence display in this embodiment.

Explanation of symbols

10 Substrate 16 Organic solid layer 18 Cathode 20 Protective film 50 Organic TFT
72, 74, 76 Insulating film 100 Organic EL element P1, P2, P3, PA Organic EL display device

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, about this embodiment, it is only one form for implementing this invention, and this invention is not limited by this embodiment.

"Organic EL display device"
FIG. 2 is a schematic cross-sectional view of the organic EL display device P1 according to this embodiment. The organic EL display device P1 includes a film substrate 10, a barrier film 12 formed on the substrate 10, an organic EL element 100 and an organic TFT 50 formed on the barrier film 12, an interlayer insulating film 72 covering the organic TFT 50, The protective film 20 covers the surface of the interlayer insulating film 72 and protects the organic EL element 100 and the organic TFT 50 from erosion from the outside.

A barrier film 12 is formed on the substrate 10. On the barrier film 12, the organic EL element 100 and the organic TFT 50 are placed in parallel. An interlayer insulating film 74 that insulates the anode 14 and the cathode 18 from the upper side of the anode 14 of the organic EL element 100 to a portion in contact with the cathode 18 is formed on the right side of the organic EL element 100 described later. At least the interlayer insulating film 72 is a protective layer that protects the organic TFT 50 from at least one of electromagnetic waves and particle beams.
The protective film 20 that protects the organic EL element 100 and the organic TFT 50 from erosion from outside is covered so as to cover the interlayer insulating film 72 and the cathode 18.

<Board>
The substrate 10 may be formed by appropriately selecting the constituent materials. For example, as the resin, thermoplastic resin, thermosetting resin, polycarbonate, polymethyl methacrylate, polyarylate, polyether sulfone, polysulfone, polyethylene terephthalate polyester, polypropylene, cellophane, polycarbonate, cellulose acetate, polyethylene, polyvinyl chloride, Polystyrene, polyamide, polyimide, polyvinylidene chloride, polyvinyl alcohol, saponified ethylene / vinyl acetate copolymer, fluororesin, chlorinated rubber, ionomer, ethylene / acrylic acid copolymer, ethylene / acrylic acid ester copolymer, etc. A simple substrate can be used. Further, instead of a substrate mainly composed of a resin, a glass substrate or a bonded substrate of glass and plastic may be used, and an alkali barrier film or a gas barrier film may be coated on the substrate surface. Further, in the case of a top emission type in which light is emitted from the opposite side to these transparent substrates, the substrate 10 does not necessarily have to be transparent.

<Barrier film>
The barrier film 12 is not necessarily formed, but is preferably formed because it can be protected from erosion due to moisture, oxygen, or the like from the substrate side. In the case of forming the barrier film 12, materials can be appropriately selected and used.
The barrier film 12 may have a multilayer structure, a single layer structure, an inorganic film, or an organic film. When an inorganic film is included, the barrier film 12 is caused by moisture, oxygen, or the like. This is preferable because the barrier property against erosion is improved.

As the inorganic film, for example, a nitride film, an oxide film, a carbon film, a silicon film, or the like can be adopted. More specifically, a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or diamond-like carbon (DLC) ) Film and amorphous carbon film. That is, nitrides such as SiN, AlN and GaN, oxides such as SiO, Al ₂ O ₃ , Ta ₂ O ₅ , ZnO and GeO, oxynitrides such as SiON, carbonitrides such as SiCN, metal fluorine compounds, Examples thereof include metal films.

Examples of the organic film include a furan film, a pyrrole film, a thiophene film, a polyparaxylene film, an epoxy resin, an acrylic resin, polyparaxylene, and a fluorine-based polymer (perfluoroolefin, perfluoroether, tetrafluoroethylene, chlorotriethylene). Fluoroethylene, dichlorodifluoroethylene, etc.), metal alkoxides (CH ₃ OM, C ₂ H ₅ OM, etc.), polyimide precursors, polymer films such as perylene compounds, and the like.

The barrier film 12 is a laminated structure composed of two or more substances, an inorganic protective film, a silane coupling layer, a laminated structure composed of a resin sealing film, a barrier layer composed of an inorganic material, and a laminated structure composed of a cover layer composed of an organic material. , Si-CXHY, etc., a compound of a metal or semiconductor and an organic substance, a laminated structure made of an inorganic substance, a structure in which an inorganic film and an organic film are alternately laminated, a structure in which SiO ₂ or Si ₃ N ₄ is laminated on a Si layer, etc. The thing made into the laminated structure is mentioned.

<Organic EL device>
FIG. 3 shows an enlarged view of the vicinity of the organic EL element 100 of the organic EL display device P1. The organic EL element 100 is formed by laminating an anode 14 / an organic solid layer 16 / a cathode 18 from the barrier film 12 side.

  The anode 14 may be a layer having an energy level at which holes can be easily injected. A transparent electrode such as ITO (Indium tin oxide) can be used, but the organic EL display device is a top emission type. In this case, a general electrode may be used instead of the transparent electrode.

  A transparent conductive material such as ITO is formed to a thickness of, for example, 150 nm by sputtering or the like. Instead of ITO, a zinc oxide (ZnO) film, IZO (indium zinc oxide alloy), gold, copper iodide, or the like may be employed instead.

  The organic solid layer 16 includes a positive hole injection layer 162 / a positive hole transport layer 164 / a light emitting layer 166 / an electron transport layer 167 / an electron injection layer 168 from the anode 14 side.

  The hole injection layer 162 is a layer that is provided between the anode 14 and the hole transport layer 164 and promotes injection of holes from the anode 14. With the hole injection layer 162, the driving voltage of the organic EL element 100 can be lowered. Also, it may play a role such as stabilizing hole injection and extending the life of the element, or covering an uneven surface such as a protrusion formed on the surface of the anode 14 to reduce element defects. is there.

  The material of the hole injection layer 162 may be appropriately selected so that the ionization energy is between the work function of the anode 14 and the ionization energy of the hole transport layer 164. For example, triphenylamine tetramer (TPTE), copper phthalocyanine, and the like can be used.

  The hole transport layer 164 is a layer that is provided between the hole injection layer 162 and the light emitting layer 166 and promotes the transport of holes, and has a function of appropriately transporting holes to the light emitting layer 166.

  The material of the hole transport layer 164 may be appropriately selected so that the ionization energy is between the hole injection layer 162 and the light emitting layer 166. For example, TPD (triphenylamine derivative) and NPB (N, N-di (naphthalene-1-yl) -N, N-diphenyl-benzidine) can be employed.

The light emitting layer 166 is a layer that recombines the transported holes and the transported electrons, which will be described later, to emit fluorescence or phosphorescence. The material of the light-emitting layer 166 may be selected as appropriate so as to satisfy the properties corresponding to the above light-emitting modes. For example, tris (8-quinolinolato) aluminum complex (Alq), bis (benzoquinolinolato) beryllium complex (BeBq), tri (dibenzoylmethyl) phenanthroline europium complex (Eu (DBM) 3 (Phen)), ditoluyl Vinyl biphenyl (DTVBi), poly (p-phenylene vinylene), π-conjugated polymers such as polyalkylthiophene, and the like can be used. For example, an aluminum quinolinol complex (Alq ₃ ) can be used to emit green light.

  For example, in a phosphorescent device, when electrons and holes are injected from the cathode 18 and the anode 14 respectively into the phosphorescent layer 166 and recombined there, recombination energy is supplied to the dopant material through the host material. This dopant emits phosphorescence. Here, under conditions where the injection current density is low, this phosphorescent organic EL element can emit red light due to the dopant. In addition, under conditions where the injection current density is high, the host material according to the present invention having a light emitting function also emits light, and additive light of the emission color of the host material and the emission color of the dopant material is obtained. For example, when a compound that emits light blue is used, the dopant emits red light. Therefore, in this organic EL element, white light in which light blue and red are synthesized can be emitted to the outside.

The electron transport layer 167 is provided between the electron injection layer 168 and the light emitting layer 166 and has a function of transporting electrons to the light emitting layer 166. For the electron transport layer 167, for example, an aluminum quinolinol complex (Alq ₃ ) or the like can be used.

  The electron injection layer 168 is provided between the electron transport layer 167 and the cathode 18 and has a function of promoting the injection of electrons from the cathode 18.

The material of the electron transport layer 168 may be appropriately selected so as to be between the work function of the cathode 18 and the electron affinity of the light emitting layer 166. For example, the electron transport layer 168 may be a thin film (for example, 0.5 nm) such as LiF (lithium fluoride) or Li ₂ O (lithium oxide).

  Each layer constituting the organic solid layer 16 is usually made of an organic material, and may be made of a high molecular weight organic material when it is made of a low molecular weight organic material. Organic solid layers composed of low molecular weight organic materials are generally produced by a dry process (vacuum process) such as vapor deposition, and organic solid layers composed of high molecular weight organic materials are generally treated by spin coating, blade coating, dipping, spraying, and printing. Each can be formed by a wet process.

  Examples of the organic material used for each layer constituting the organic solid layer 16 include polymer materials such as PEDOT, polyaniline, polyparaphenylene vinylene derivative, polythiophene derivative, polyparaphenylene derivative, polyalkylphenylene, and polyacetylene derivative.

  In the present embodiment, the organic solid layer 16 includes a hole injection layer 162, a hole transport layer 164, a light emitting layer 166, an electron transport layer 167, and an electron injection layer 168. There is no limitation, and the light-emitting layer 166 may be included at least.

  For example, depending on the characteristics of the organic material used, etc., in addition to a single layer structure of the light emitting layer, etc., a two-layer structure such as a hole transport layer / light emitting layer, a light emitting layer / electron transport layer, etc. / A three-layer structure of an electron transport layer, or a multilayer structure including a charge (hole, electron) injection layer and the like.

Further, a hole blocking layer may be provided between the light emitting layer 166 and the electron transport layer 168 in the organic solid layer 16. The holes may pass through the light emitting layer 166 and reach the cathode 18. For example, when Alq ₃ or the like is used for the electron transport layer 168, the holes flow into the electron transport layer, so that the Alq ₃ emits light or the holes cannot be trapped in the light emitting layer, resulting in a decrease in light emission efficiency. there's a possibility that. Therefore, a hole blocking layer may be provided to prevent holes from flowing out from the light emitting layer 166 to the electron transporting layer 168.

  For the cathode 18, a material having a small work function or electron affinity may be selected in order to improve electron injection into the organic solid layer 16. For example, an alloy type (mixed metal) such as an Mg: Ag alloy or an Al: Li alloy can be suitably used. The cathode 18 can be formed of a metal material such as Al, Mg, or Ag by vacuum deposition or the like to a thickness of 150 nm, for example.

<Organic transistor (organic TFT)>
FIG. 4 shows an enlarged view of the vicinity of the organic TFT 50 of the organic EL display device P1. The organic TFT 50 includes a gate electrode 52 formed on the barrier film 12 from the barrier film 12 side, and a gate insulating film 54 formed so as to cover the surface of the gate electrode 52.

  On the gate insulating film 54, an organic semiconductor layer 56, a source electrode 58 on the left edge side, and a drain electrode 60 on the right edge side are formed. Here, the drain electrode 60 is electrically connected to the anode 14 of the organic EL element 100. That is, in the organic TFT 50, the source electrode 58 and the drain electrode 60 are provided separately from each other, the organic semiconductor layer 56 is interposed between the source electrode 58 and the drain electrode 60, and the source electrode 58 is interposed via the gate insulating film 54. , A drain electrode 60, and a gate electrode 52 disposed to face the organic semiconductor layer 56.

  The gate electrode 52 may be any metal that can be anodized as a gate electrode material, and a single substance such as Al, Mg, Ti, Nb, Zr, or an alloy thereof may be used, but is not limited thereto. The gate electrode only needs to have sufficient conductivity. For example, Pt, Au, W, Ru, Ir, Al, Sc, Ti, V, Mn, Fe, Co, Ni, Zn, Ga, Y, Zr, Nb, Mo, Tc, Rh, Pd, Ag, Cd, Ln, Sn, Ta, Re, Os, Tl, Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, A single metal such as Er, Tm, Yb, or Lu, or a laminate or a compound thereof may be used. In addition, organic conductive materials including conjugated polymer compounds such as metal oxides such as ITO and IZO, polyanilines, polythiophenes, and polypyrroles may be used.

  The manufacturing method of the gate electrode 52 may be a general method for forming the wiring pattern of the gate electrode 52 on the substrate 10. A sputtering method, a CVD method, and the like can be given, but there is no particular limitation, and an appropriate method may be used. For example, general thin film forming methods such as vacuum deposition, ion plating, sol-gel method, spin coating method, spray method, and CVD are also possible.

  The gate insulating film 54 may be preferably formed as the gate insulating film 54 by anodizing the surface of the material used as the material of the gate electrode 52. However, the present invention is not limited to this, and any insulating material such as an inorganic material or an organic material can be used.

For example, the metal oxides include LiOx, LiNx, NaOx, KOx, RbOx, CsOx, BeOx, MgOx, MgNx, CaOx, CaNx, SrOx, BaOx, ScOx, YOx, YNx, LaOx, LaNx, CeOx, PrOx, PrOx, PrOx, SmOx, EuOx, GdOx, TbOx, DyOx, HoOx, ErOx, TmOx, YbOx, LuOx, TiOx, TiNx, ZrOx, ZrNx, HfOx, HfNx, ThOx, VOx, VNx, NbOxT MoNx, WOx, WNx, MnOx, ReOx, FeOx, FeNx, RuOx, OsOx, CoOx, RhOx, IrOx, NiOx, PdOx, PtOx, CuOx, CuNx, AgOx, AuOx, Z Metal oxides such as Ox, CdOx, HgOx, BOx, BNx, AlOx, AlNx, GaOx, GaNx, InOx, TiOx, TiNx, SiNx, GeOx, SnOx, PbOx, POx, PNx, AsOx, SbOx, SeOx, TeOx, etc. _{LiAlO 2, Li 2 SiO 3,} Li 2 TiO 3, Na 2 Al 22 O 34, NaFeO 2, Na 4 SiO 4, K 2 SiO 3, K 2 TiO 3, K 2 WO 4, Rb 2 CrO 4, Cs 2 _{CrO 4, MgAl 2 O 4,} MgFe 2 O 4, MgTiO 3, CaTiO 3, CaWO 4, CaZrO 3, SrFe 12 O 19, SrTiO 3, SrZrO 3, BaAl 2 O 4, BaFe 12 O 19, BaTiO 3, Y ₃ A ₁₅ O ₁₂ , Y ₃ Fe _{5 O 12, LaFeO 3, La 3} Fe 5 O 12, La 2 Ti 2 O 7, CeSnO 4, CeTiO 4, Sm 3 Fe 5 O 12, EuFeO 3, Eu 3 Fe 5 O 12, GdFeO 3, Gd 3 Fe 5 _{O 12, DyFeO 3, Dy 3} Fe 5 O 12, HoFeO 3, Ho 3 Fe 5 O 12, ErFeO 3, Er 3 Fe 5 O 12, Tm 3 Fe 5 O 12, LuFeO 3, Lu 3 Fe 5 O 12, _{NiTiO 3, Al 2 TiO 3,} FeTiO 3, BaZrO 3, LiZrO 3, MgZrO 3, HfTiO 4, NH 4 VO 3, AgVO 3, LiVO 3, BaNb 2 O 6, NaNbO 3, SrNb 2 O 6, KTaO 3, _{NaTaO 3, SrTa 2 O 6,} CuCr 2 O 4, Ag 2 _{rO 4, BaCrO 4, K 2} MoO 4, Na 2 MoO 4, NiMoO 4, BaWO 4, Na 2 WO 4, SrWO 4, MnCr 2 O 4, MnFe 2 O 4, MnTiO 3, MnWO 4, CoFe 2 O 4 _{, ZnFe 2 O 4, FeWO 4} , CoMoO 4, CuTiO 3, CuWO 4, Ag 2 MoO 4, Ag 2 WO 4, ZnAl 2 O 4, ZnMoO 4, ZnWO 4, CdSnO 3, CdTiO 3, CdMoO 4, CdWO 4 , NaAlO ₂ , MgAl ₂ O ₄ , SrAl ₂ O ₄ , Gd ₃ Ga ₅ O ₁₂ , InFeO ₃ , MgIn ₂ O ₄ , Al ₂ TiO ₅ , FeTiO ₃ , MgTiO ₃ , Na ₂ SiO ₃ , CaSiO ₃ , ZrSiO ₄ , K ₂ GeO ₃ , Li ₂ GeO ₃ , _{Na 2 GeO 3, Bi 2 Sn} 3 O 9, MgSnO 3, SrSnO 3, PbSiO 3, PbMoO 4, PbTiO 3, SnO 2 -Sb 2 O 3, CuSeO 4, Na 2 SeO 3, ZnSeO 3, K 2 TeO 3 , K ₂ TeO ₄ , Na ₂ TeO ₃ , Na ₂ TeO ₄ and other metal composite oxides.

Also, not limited to metal oxides, sulfides such as FeS, Al ₂ S ₃ , MgS, ZnS, fluorides such as LiF, MgF ₂ , SmF ₃ , chlorides such as HgCl, FeCl ₂ , CrCl ₃ , AgBr, CuBr, MnBr bromides such as _2, PbI _{2, CuI,} not particularly limited and may be a metal oxynitride such as iodide or SiAlON, such FeI _2. Moreover, it is not restricted to a metal or a metal compound, You may use organic materials, such as polymer materials, such as a polyimide, polyamide, polyester, polyacrylate, an epoxy resin, a phenol resin, and polyvinyl alcohol.

  The method for forming the gate insulating film 54 is not particularly limited, and an appropriate method may be used. For example, a sputtering method, a CVD method, and the like can be mentioned, but a general thin film forming method such as vacuum deposition, ion plating, sol-gel method, spin coating method, spray method, and CVD can also be used. As long as it is an organic film, it may be formed by a spin coating method, a printing method, a vapor deposition method, or the like.

  The source electrode 58 and / or the drain electrode 60 are applicable as long as they have sufficient conductivity, and are not particularly limited. For example, Pt, Au, W, Ru, Ir, Al, Sc, Ti, V, Mn, Fe, Co, Ni, Zn, Ga, Y, Zr, Nb, Mo, Tc, Rh, Pd, Ag, Cd, Ln, Sn, Ta, Re, Os, Tl, Pb, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, etc. Metal simple substance or laminate or compound thereof, Metal oxide such as ITO, IZO, Polyaniline, Polythiophene And organic conductive materials containing conjugated polymer compounds such as polypyrroles can be used.

  The source electrode 58 and the drain electrode 60 may be manufactured by a general method. A sputtering method, a CVD method, and the like can be given, but there is no particular limitation, and an appropriate method may be used. For example, a general thin film forming method such as vacuum deposition, ion plating, sol-gel method, spray method, spin coating method, CVD, lift-off, or the like is also possible.

  The organic semiconductor 56 may be any organic material that exhibits semiconductor characteristics, such as pentacene, and is not particularly limited. For example, phthalocyanine derivatives, naphthalocyanine derivatives, azo compound derivatives, perylene derivatives, indigo derivatives, quinacridone compounds, and the like. Derivatives, polycyclic quinone derivatives such as anthraquinones, cyanine derivatives, fullerene derivatives, or nitrogen-containing compounds such as indole, carbazole, oxazole, inoxazole, thiazole, imidazole, pyrazole, oxadiazole, pyrazoline, thiathiazole, triazole Cyclic compound derivatives, hydrazine derivatives, triphenylamine derivatives, triphenylmethane derivatives, stilbenes, quinone compound derivatives such as anthraquinone diphenoquinone, anthracene, bilene, fluoro Polycyclic aromatic compound derivatives such as nanthrene and coronene whose structure is used in the main chain of polymer such as polyethylene chain, polysiloxane chain, polyether chain, polyester chain, polyamide chain, polyimide chain, etc. Attached in a pendant form as a chain, or an aromatic conjugated polymer such as polyparaphenylene, an aliphatic conjugated polymer such as polyacetylene, a heterocyclic conjugated polymer having a polypinol or polythiophene ratio, a polyaniline, Hetero-atom conjugated polymers such as polyphenylene sulfide, composite type having a structure in which structural units of conjugated polymers such as poly (phenylene vinylene), poly (annelen vinylene) and poly (chenylene vinylene) are alternately bonded Carbon-based conjugated polymers such as conjugated polymers are used. In addition, oligosilanes such as polysilanes, disilanylene arylene polymers, (disilanylene) ethenylene polymers, and disilanylene carbon-based polymer structures such as (disilanylene) ethynylene polymers alternate with carbon-based conjugated structures. Polymers linked to are used. In addition, polymer chains composed of inorganic elements such as phosphorus and nitrogen may be used, and polymers having aromatic chain ligands such as phthalocyanate polysiloxane coordinated, perylenetetracarboxylic Polymers in which perylenes such as acids are subjected to heat treatment and condensed, ladder-type polymers obtained by heat-treating polyethylene derivatives having a cyano group such as polyacrylonitrile, and organic compounds intercalated in perovskites The composite material may be used.

  A method for forming the organic semiconductor 56 includes a vapor deposition method and the like, but is not particularly limited, and an appropriate method may be used. For example, a general thin film forming method such as ion plating, a sol-gel method, a spray method, or a spin coating method can be used.

<Interlayer insulation film>
(Interlayer insulating film 72)
The interlayer insulating film 72 is a protective layer that protects the organic transistor 50 from at least one of electromagnetic waves and particle beams. The electromagnetic wave is an electromagnetic wave that damages the layer constituting the organic TFT, and examples thereof include infrared light, visible light, ultraviolet light, and light having a shorter wavelength than visible light. Moreover, a particle beam is a particle beam which damages the layer which comprises organic TFT, for example, an alpha ray, a beta ray, a neutron beam etc. are mentioned. Further, the protection of the organic TFT from at least one of the electromagnetic wave and the particle beam is a concept including the protection of the organic TFT by at least one of the shielding, absorption, and reflection of the electromagnetic wave and the particle beam. is there.

  The protective layer is not particularly limited as long as it has a protective action from at least one of electromagnetic waves and particle beams. It is preferable that the electromagnetic wave to be protected as in the present embodiment is at least one of an electron beam, visible light, and light having a shorter wavelength than visible light, since these easily damage the organic TFT 50. More preferably, the shorter the wavelength, such as blue light, violet light, ultraviolet light, and X-ray, the more easily the organic TFT 50 is damaged. Therefore, it is preferable to protect the organic TFT 50 from these short wavelength light. Sometimes infrared light may also damage the organic TFT 50.

  The protective layer is preferably a colored transparent layer or an opaque layer having translucency equal to or less than translucent because it is easy to protect the organic TFT 50 from electromagnetic waves, but is not limited thereto. The color is preferably a darker color having higher electromagnetic wave absorbability, and particularly preferably black. As the protective layer, in order to make a colored transparent layer or an opaque layer having a translucency of translucent or less, it is preferable to contain a colorant in the resin.

  Resin used as dispersion medium is polyolefin resin, acrylic resin, cellulose resin, melamine resin, polyester resin, polyamide resin, acrylic resin, styrene resin, polyamide, ethylene-vinyl acetate copolymer, vinyl chloride Examples thereof include thermoplastic elastomers such as vinyl acetate copolymer and styrene-butadiene rubber.

  The colorant is not limited, and dyes and pigments in general can be used. Various types of organic and inorganic materials can be used. For example, bright pigments such as aluminum, brass, vapor deposited powder, pearl pigment (white, gold, etc.), rhodamine lake B, insoluble azo red pigment (naphthol) (eg, Brilliant Carmel BS, Lake Carmel FB, Lake Red 4B) , First Red FGR, Lake Bold 5B, Toluidine Marlon), Insoluble azo red pigment (anilide type) (eg, pyrazole red), Soluble azo red pigment (eg, Lake Orange, Brilliant Carmel 3B, Brilliant Carmel 6B, Brilliant Scarlet G) , Lake Red C, Lake Red D, Lake Red R, Lake Bold 10B, Bonmarlon L, Bonmarlon M), etc., Hythe Yellow A, inert azo yellow pigment (anilide type) (eg, Fast Yellow G, First Yellow pigments such as yellow 10G, diazo orange), dye lake yellow pigments (eg, yellow lake), phthalocyanine blue pigments (eg, phthalocyanine blue, first sky blue), dyed lake blue pigments (eg, violet) Lake, Blue Lake), blue pigments such as other pigments (eg, alkali blue), black pigments such as carbon black, acetylene black, lamp black, aniline black, oxidation that can be either rutile titanium oxide or anatase titanium oxide Examples thereof include inorganic fillers such as titanium, silica, alumina, clay, talc, calcium carbonate, and barium sulfate, and white pigments such as zinc oxide.

  These colorants can be selected from carbon black, organic colorants, inorganic colorants and the like according to the required color tone, and can be used alone or in combination of two or more. It can also be used after adjusting to a desired hue.

  The protective layer may be colorless and transparent as long as it is a layer containing a light absorber such as an ultraviolet absorber or a particle beam absorber. If the coloring and the ultraviolet absorber are used in combination, it is more effective. For example, it is preferable to contain an ultraviolet absorber. UV absorbers include cinnamic acid, para-aminobenzoic acid (PABA), camphor derivatives, benzophenone, and benzoylmethane-based UV absorbers. Can be used. Other examples include titanium oxide, zinc oxide, iron oxide, cerium oxide, zirconium oxide, mica, kaolin, sericite, benzotriazole and cyanoacrylate.

  Examples of the benzophenone compounds include 2,3′-dihydroxy-4,4′-dimethoxybenzophenone, 2,2′-dihydroxy-4-methoxybenzophenone and 2,2 ′, 4,4′-tetrahydroxybenzophenone. Can be mentioned.

  Examples of the benzotriazole type include 2- (2'-hydroxy-5'-methylphenyl) benzotriazole, 2- (2'-hydroxy-5'-methylphenyl) -5,6- Dichlorobenzotriazole), 2- (2'-hydroxy-5'-t-butylphenyl), benzotriazole, 2- (2'-hydroxy-3'-methyl-5'-t-butylphenyl) ) Benzotriazole, 2- (2'-hydroxy-3 ', 5'-di-t-butylphenyl) -5-chloro-benzotriazole and 2- (2'-hydroxy-5'-phenylphenyl)- 5-chlorobenzotriazole, 2- (2'-hydroxy-3 ', 5'-di-t-butylphenyl) -5-chlorobenzotriazole, 2- (2'-hydroxy-3) '-T-bu -5'-methylphenyl) -5-chlorobenzotriazole, 2- (2'-hydroxy-3 ', 5'-di-t-amylphenyl) benzotriazole, 2- (2'-hydroxy) -3 ', 5'-di-t-butylphenyl) benzotriazole, 2- (2'-hydroxy-5'-t-octylphenyl) benzotriazole, 2- {2'-hydroxy-3'-( 3 ″, 4 ″, 5 ″, 6 ″ -tetrahydrophthalimidomethyl) -5′-methylphenyl} benzotriazole, 2- {2-hydroxy-3,5-bis (α, α′-dimethylbenzyl) phenyl} And 2-hydroxybenzotriazole, 2- (2-hydroxy-4-octyloxyphenyl) -2H-benzotriazole, and the like. Examples of the cyanoacrylate type include ethyl-2-cyano-3,3-diphenyl acrylate, 2-ethylhexyl-2-cyano-3,3-diphenyl acrylate, and the like. it can.

  The protective layer is preferably a reflective layer having a metallic luster such as metal, a specularity, and a reflective property, but is not limited thereto. Moreover, even if it is other than a metal, what is necessary is just to give metallic luster with metallic printing inks, such as silver or gold, which added metal pigments, such as aluminum paste and aluminum powder.

The protective layer is made of, for example, inorganic materials such as LiOx, LiNx, NaOx, KOx, RbOx, CsOx, BeOx, MgOx, MgNx, CaOx, CaNx, SrOx, BaOx, ScOx, YOx, YNx, LaOx, LaNx, CeOx, PrOx, Prx , SmOx, EuOx, GdOx, TbOx, DyOx, HoOx, ErOx, TmOx, YbOx, LuOx, TiOx, TiNx, ZrOx, ZrNx, HfOx, HfNx, ThOx, VOx, VNx, NbOx, VNx, NbOx , MoNx, WOx, WNx, MnOx, ReOx, FeOx, FeNx, RuOx, OsOx, CoOx, RhOx, IrOx, NiOx, PdOx, PtOx, CuOx, CuNx, AgOx, AuOx, Metal oxide such as nOx, CdOx, HgOx, BOx, BNx, AlOx, AlNx, GaOx, GaNx, InOx, TiOx, TiNx, SiNx, GeOx, SnOx, PbOx, POx, PNx, AsOx, SbOx, SeOx, TeOx, etc. _{LiAlO 2, Li 2 SiO 3,} Li 2 TiO 3, Na 2 Al 22 O 34, NaFeO 2, Na 4 SiO 4, K 2 SiO 3, K 2 TiO 3, K 2 WO 4, Rb 2 CrO 4, Cs 2 _{CrO 4, MgAl 2 O 4,} MgFe 2 O 4, MgTiO 3, CaTiO 3, CaWO 4, CaZrO 3, SrFe 12 O 19, SrTiO 3, SrZrO 3, BaAl 2 O 4, BaFe 12 O 19, BaTiO 3, Y _{3 A l5 O 12, Y 3} Fe _{O 12, LaFeO 3, La 3} Fe 5 O 12, La 2 Ti 2 O 7, CeSnO 4, CeTiO 4, Sm 3 Fe 5 O 12, EuFeO 3, Eu 3 Fe 5 O 12, GdFeO 3, Gd 3 Fe 5 _{O 12, DyFeO 3, Dy 3} Fe 5 O 12, HoFeO 3, Ho 3 Fe 5 O 12, ErFeO 3, Er 3 Fe 5 O 12, Tm 3 Fe 5 O 12, LuFeO 3, Lu 3 Fe 5 O 12, _{NiTiO 3, Al 2 TiO 3,} FeTiO 3, BaZrO 3, LiZrO 3, MgZrO 3, HfTiO 4, NH 4 VO 3, AgVO 3, LiVO 3, BaNb 2 O 6, NaNbO 3, SrNb 2 O 6, KTaO 3, _{NaTaO 3, SrTa 2 O 6,} CuCr 2 O 4, Ag 2 _{CrO 4, BaCrO 4, K 2} MoO 4, Na 2 MoO 4, NiMoO 4, BaWO 4, Na 2 WO 4, SrWO 4, MnCr 2 O 4, MnFe 2 O 4, MnTiO 3, MnWO 4, CoFe 2 O 4 _{, ZnFe 2 O 4, FeWO 4} , CoMoO 4, CuTiO 3, CuWO 4, Ag 2 MoO 4, Ag 2 WO 4, ZnAl 2 O 4, ZnMoO 4, ZnWO 4, CdSnO 3, CdTiO 3, CdMoO 4, CdWO 4 , NaAlO ₂ , MgAl ₂ O ₄ , SrAl ₂ O ₄ , Gd ₃ Ga ₅ O ₁₂ , InFeO ₃ , MgIn ₂ O ₄ , Al ₂ TiO ₅ , FeTiO ₃ , MgTiO ₃ , Na ₂ SiO ₃ , CaSiO ₃ , ZrSiO ₄ , K ₂ GeO ₃ , Li ₂ GeO _{3 , Na 2 GeO 3, Bi 2} Sn 3 O 9, MgSnO 3, SrSnO 3, PbSiO 3, PbMoO 4, PbTiO 3, SnO 2 -Sb 2 O 3, CuSeO 4, Na 2 SeO 3, ZnSeO 3, K 2 TeO ₃ , metal composite oxides such as K ₂ TeO ₄ , Na ₂ TeO ₃ , and Na ₂ TeO ₄ , sulfides such as FeS, Al ₂ S ₃ , MgS, and ZnS, fluorides such as LiF, MgF ₂ , and SmF _{3 ,} HgCl, FeCl 2, chlorides such as CrCl _3, AgBr, CuBr, bromides such as MnBr _2, PbI _{2, CuI,} iodides such FeI ₂ or entrained material coloring material to a metal oxynitride such as SiAlON, But it is effective. Further, the organic material may be a material in which polyimide, polyamide, polyester, polyacrylate, epoxy resin, phenol resin, polyvinyl alcohol, or the like is colored or an ultraviolet absorber is mixed.

  As a method for forming the protective layer, it is preferable to produce the protective layer so as not to damage the organic TFT 50 as much as possible by a method that does not emit a particle beam, an electromagnetic wave, particularly a light having a shorter wavelength than visible light. For example, it can be formed by a general thin film forming method such as a sol-gel method, a spray, or a spin coating method.

(Interlayer insulation film 74)
The interlayer insulating film 74 may be formed at the same time as the interlayer insulating film 74 at the right end of the organic EL element 100 or may be formed individually. The material for forming each interlayer insulating film is not particularly limited, and the type thereof may be different between the interlayer insulating film 72 on the organic TFT and the interlayer insulating film 74 at the right end of the organic EL element. In addition, the interlayer insulating film 74 can be omitted as appropriate.

A material for forming the interlayer insulating film 74 is not particularly limited, but any insulator of an inorganic material or an organic material can be used. For example, LiOx, LiNx, NaOx, KOx, RbOx, CsOx, BeOx, MgOx, MgNx, CaOx, CaNx, SrOx, BaOx, ScOx, YOx, YNx, LaOx, LaNx, CeOx, PrOx, TdOx, TdOx, TdOx, TdOx , DyOx, HoOx, ErOx, TmOx, YbOx, LuOx, TiOx, TiNx, ZrOx, ZrNx, HfOx, HfNx, ThOx, VOx, VNx, NbOx, TaOx, TaNx, MoOx, CrNx, MoOx, CrNx, MoOx , ReOx, FeOx, FeNx, RuOx, OsOx, CoOx, RhOx, IrOx, NiOx, PdOx, PtOx, CuOx, CuNx, AgOx, AuOx, ZnOx, CdOx, Hg x, BOx, BNx, AlOx, AlNx, GaOx, GaNx, InOx, TiOx, TiNx, SiNx, GeOx, SnOx, PbOx, POx, PNx, AsOx, SbOx, SeOx, be a metal oxide such as TeOx, LiAlO _2, Li ₂ SiO ₃ , Li ₂ TiO ₃ , Na ₂ Al ₂₂ O ₃₄ , NaFeO ₂ , Na ₄ SiO ₄ , K ₂ SiO ₃ , K ₂ TiO ₃ , K ₂ WO ₄ , Rb ₂ CrO ₄ , Cs ₂ CrO ₄ , MgAl _{2 O 4, MgFe 2 O 4} , MgTiO 3, CaTiO 3, CaWO 4, CaZrO 3, SrFe 12 O 19, SrTiO 3, SrZrO 3, BaAl 2 O 4, BaFe 12 O 19, BaTiO 3, Y 3 A l5 O ₁₂ , Y ₃ Fe ₅ O ₁₂ , LaFeO ₃ , La ₃ Fe ₅ O ₁₂ , La ₂ Ti ₂ O ₇ , CeSnO ₄ , CeTiO ₄ , Sm ₃ Fe ₅ O ₁₂ , EuFeO ₃ , Eu ₃ Fe ₅ O ₁₂ , GdFeO ₃ O, Gd ₃ Fe ₅ O _{12 3} , Dy ₃ Fe ₅ O ₁₂ , HoFeO ₃ , Ho ₃ Fe ₅ O ₁₂ , ErFeO ₃ , Er ₃ Fe ₅ O ₁₂ , Tm ₃ Fe ₅ O ₁₂ , LuFeO ₃ , Lu ₃ Fe ₅ O ₁₂ , NiTiO _{3 2 TiO 3, FeTiO 3, BaZrO} 3, LiZrO 3, MgZrO 3, HfTiO 4, NH 4 VO 3, AgVO 3, LiVO 3, BaNb 2 O 6, NaNbO 3, SrNb 2 O 6, KTaO 3, NaTaO 3, SrTa _{2 O 6, CuCr 2 O 4} , Ag 2 CrO 4, BaCrO ₄ , K ₂ MoO ₄ , Na ₂ MoO ₄ , NiMoO ₄ , BaWO ₄ , Na ₂ WO ₄ , SrWO ₄ , MnCr ₂ O ₄ , MnFe ₂ O ₄ , MnTiO ₃ , MnWO ₄ , CoFe ₂ O ₄ , ZnFe ₂ O _{4, FeWO 4, CoMoO 4,} CuTiO 3, CuWO 4, Ag 2 MoO 4, Ag 2 WO 4, ZnAl 2 O 4, ZnMoO 4, ZnWO 4, CdSnO 3, CdTiO 3, CdMoO 4, CdWO 4, NaAlO 2, MgAl ₂ O ₄ , SrAl ₂ O ₄ , Gd ₃ Ga ₅ O ₁₂ , InFeO ₃ , MgIn ₂ O ₄ , Al ₂ TiO ₅ , FeTiO ₃ , MgTiO ₃ , Na ₂ SiO ₃ , CaSiO ₃ , ZrSiO ₄ , K ₂ GeO _{3, Li 2 GeO 3, Na} 2 GeO 3, _{i 2 Sn 3 O 9, MgSnO} 3, SrSnO 3, PbSiO 3, PbMoO 4, PbTiO 3, SnO 2 -Sb 2 O 3, CuSeO 4, Na 2 SeO 3, ZnSeO 3, K 2 TeO 3, K 2 TeO 4 , Na ₂ TeO ₃ , Na ₂ TeO _4, and other metal composite oxides such as FeS, Al ₂ S ₃ , MgS, ZnS and other sulfides, LiF, MgF ₂ , SmF ₃ and other fluorides, HgCl, FeCl ₂ , It is also effective for chlorides such as CrCl ₃ , bromides such as AgBr, CuBr, and MnBr ₂ , iodides such as PbI ₂ , CuI, and FeI _2, and metal oxynitrides such as SiAlON. Further, it may be a polymer material such as polyimide, polyamide, polyester, polyacrylate, epoxy resin, phenol resin, polyvinyl alcohol.

<Protective film>
The protective film 20 may have a multilayer structure, a single layer structure, an inorganic film, or an organic film. If an inorganic film is included, the protective film 20 is caused by moisture, oxygen, or the like. This is preferable because the barrier property against erosion is improved.

As the inorganic film, for example, a nitride film, an oxide film, a carbon film, a silicon film, or the like can be adopted. More specifically, a silicon nitride film, a silicon oxide film, a silicon oxynitride film, or diamond-like carbon (DLC) ) Film and amorphous carbon film. That is, nitrides such as SiN, AlN and GaN, oxides such as SiO, Al ₂ O ₃ , Ta ₂ O ₅ , ZnO and GeO, oxynitrides such as SiON, carbonitrides such as SiCN, metal fluorine compounds, Examples thereof include metal films.

Examples of the organic film include a furan film, a pyrrole film, a thiophene film, a polyparaxylene film, an epoxy resin, an acrylic resin, polyparaxylene, and a fluorine-based polymer (perfluoroolefin, perfluoroether, tetrafluoroethylene, chlorotriethylene). Fluoroethylene, dichlorodifluoroethylene, etc.), metal alkoxides (CH ₃ OM, C ₂ H ₅ OM, etc.), polyimide precursors, polymer films such as perylene compounds, and the like.

The protective film 20 includes a laminated structure composed of two or more substances, an inorganic protective film, a silane coupling layer, a laminated structure composed of a resin sealing film, a barrier layer composed of an inorganic material, and a laminated structure composed of a cover layer composed of an organic material. , Si-CXHY, etc., a compound of a metal or semiconductor and an organic substance, a laminated structure made of an inorganic substance, a structure in which an inorganic film and an organic film are alternately laminated, a structure in which SiO ₂ or Si ₃ N ₄ is laminated on a Si layer, etc. The thing made into the laminated structure is mentioned.

  As for the barrier film 12 and the protective film 20, the organic film comprised fills up the pinhole and surface unevenness | corrugation formed in the inorganic film, and planarizes the surface. Also, it may play a role of relaxing the film stress of the inorganic film.

  The manufacturing method of the protective film 20 includes a sputtering method, a CVD method, and the like, but is not particularly limited, and an appropriate one may be used as appropriate. For example, general thin film forming methods such as vacuum deposition, ion plating, sol-gel method, spray method, spin coating method, and CVD are also possible.

  The insulating film 72 and the protective film 20 do not prevent other layers from being formed therebetween. The term “formed on the surface of the layer and on the surface of the layer” may be an upper layer of the layer, and is a concept including both being formed directly on the surface or indirectly through another layer. is there.

<Light emission mode of organic EL display device>
The light emission mode of the organic EL display device P1 will be described.

  When a voltage is applied between the gate electrode 52 and the source electrode 58, holes are generated at the interface (region of about several nm) between the organic semiconductor 56 and the gate insulating film 54. When a voltage is applied between the source electrode 58 and the drain electrode 60 after the holes are generated, the holes can be transported. On the other hand, holes are not transported unless a voltage is applied between the gate electrode 52 and the source electrode 58. Thus, switching can be performed using the non-conducting state (the switch is off) and the conducting state (the switch is on).

  Holes (holes) are supplied from the source electrode 58 to the drain electrode 60 through the gate insulating film 54. Holes are transmitted to the anode 14 of the organic EL element 100 through the drain electrode 60.

  In the organic EL element 100, holes are transported from the anode 14 to the hole injection layer 162 in the organic solid layer 16. The transported holes are injected into the hole transport layer 164. The holes injected into the hole transport layer 164 are transported to the light emitting layer 166.

  In the organic EL element 100, electrons are transported from the cathode 18 to the electron injection 168 in the organic solid layer 16. The transported electrons are injected into the electron transport layer 167. The transported electrons are transported to the light emitting layer 166.

  The transported holes and electrons recombine in the light emitting layer 166. During recombination, light emitted by EL is generated by the energy generated. This light emission is led out to the outside through the hole transport layer 164, the hole injection layer 162, the anode 14, the barrier film 12, and the substrate 10 in order, and the light emission can be visually recognized.

  When Al is used for the cathode 18, the interface between the cathode layer 18 and the electron transport layer 168 becomes a reflection surface, and is reflected at this interface, proceeds to the anode 14 side, passes through the substrate 10, and goes to the outside. Is injected. Therefore, when the organic EL element having the above-described configuration is employed in a display or the like, the substrate 10 side serves as a display observation surface.

  For example, when a full-color display is to be realized with an organic EL panel, for example, a method of separately manufacturing organic EL elements that emit RGB colors (painting method), an organic EL element that emits white light with a single color, and a color A method combining a filter (color filter method), a method combining a single color organic EL element such as blue light emission or white light emission and a color conversion layer (color conversion method), a single color organic EL element, and organic light emission A method of realizing multiple light emission by irradiating the layer with electromagnetic waves (photo bleaching method) or the like can be mentioned, but it is not particularly limited.

  In this embodiment, since the protective layer is provided, the organic TFT can be protected from at least one of the electromagnetic wave and the particle beam that cause damage to the organic TFT. Therefore, the reliability can be ensured even if the organic EL display device P1 uses electromagnetic waves that cause damage to the organic TFT, other manufacturing processes that use particle beams, or long-term use by consumers.

"Method for manufacturing organic EL display device"
A method for manufacturing the organic EL display device P1 shown in FIG. 2 will be described. A barrier film 12 is formed on the substrate 10, and a portion excluding the cathode 18 of the organic EL element 100 and the organic TFT 50 are formed on the barrier film 12. The drain electrode 60 of the organic TFT 50 and the anode 14 of the organic EL element 100 are made to contact each other so as to be electrically connected.

  Next, an interlayer insulating film 72 is formed so as to cover the surface of the organic TFT 50 at the left edge of the organic EL element 100 in the drawing. Further, the interlayer insulating film 74 is formed so as to include the anode 14 on the right edge of the organic EL element 100 in the drawing.

  After these interlayer insulating films are formed, the cathode 18 of the organic EL element 100 is formed. This formation is performed by extending to the extent that it covers the interlayer insulating film 74.

  After the cathode 18 is formed, the protective film 20 is formed so as to cover the surfaces of the cathode 18 and the interlayer insulating film 72, and the organic EL display device P1 is manufactured.

  In the present embodiment, the protective film 20 is a protective layer particularly when the method of forming the protective film 20 generates a particle beam such as light having a shorter wavelength than visible light such as ultraviolet rays or secondary electrons such as a vacuum process such as CVD. Since the interlayer insulating film 72 protects against at least one of the electromagnetic wave and the particle beam that damage the organic TFT 50, the organic EL display device P1 including the organic TFT 50 with little damage can be provided.

  Each layer can be added with additives such as waxes, antioxidants, heat stabilizers, leveling agents, coupling agents, and modifiers as required, as long as the properties of the layer to be added are not impaired.

  The production method of each layer includes, for example, gravure coating, gravure reverse coating, comma coating, die coating, lip coating, cast coating, roll coating, air knife coating, Mayer bar coating, extrusion coating, offset, and UV curing offset. Various printing methods such as flexo, stencil, silk, curtain flow coat, wire bar coat, reverse coat, gravure coat, kiss coat, blade coat, smooth coat, spray coat, run-off coat and brush coating can be applied. In addition to coating the lower layer as a dry film, the lower layer and the upper layer can be dried in two layers in a wet state.

“Other embodiment 1”
FIG. 5 shows an organic EL display device P2 of another embodiment 1 according to this embodiment. Hereinafter, the same reference numerals are assumed to be the same as those in the above embodiment, and the description thereof is omitted.

  The organic EL element 100 is disposed on the organic TFT 50 at a position not in series with the organic TFT 50, and the organic EL element 100 and the organic TFT 50 are covered with the protective film 20. The drain electrode 60 and the anode 14 are electrically connected by a through hole 80 that is a hole transport path provided in the interlayer insulating film 72.

  As in the above embodiment, the protective layer is the interlayer insulating film 72. By providing the interlayer insulating film 72 having an action of protecting the organic transistor 50 from at least one of the electromagnetic wave and the particle beam, the organic TFT can be protected from the electromagnetic wave that damages the organic TFT. Therefore, the reliability can be further ensured even if the organic EL display device P2 uses electromagnetic waves that cause damage to the organic TFTs or is used for a long time by consumers.

  A method for manufacturing the organic EL display device P2 will be described. A barrier film 12 is formed on the substrate 10 to produce an organic TFT 50. An interlayer insulating film 72 is formed so as to cover the surface of the organic TFT 50, and a through hole 80 is produced. Next, the anode 14 is formed, and the organic EL element 100 is formed thereon. Here, a through hole 80 is provided so that the drain electrode 60 of the organic TFT 50 and the anode 14 of the organic EL element 100 are electrically connected.

  The protective film 20 is formed so as to cover the surfaces of the organic EL element 100 and the interlayer insulating film 72, and the organic EL display device P2 is manufactured.

  In the present embodiment, the protective film 20 is a protective layer particularly when the formation method of the protective film 20 easily generates particle beams such as light having a shorter wavelength than that of visible light such as ultraviolet rays, such as a vacuum process such as CVD. Since the interlayer insulating film 72 protects against at least one of the electromagnetic wave and the particle beam that damage the organic TFT 50, the organic EL display device P2 including the organic TFT 50 with little damage can be provided.

“Other embodiment 2”
FIG. 6 shows an organic EL display device P3 of another embodiment 2 according to this embodiment.

  The driving transistor 59 is disposed on the organic TFT 50 at a position not in series, and the organic EL element 100 is disposed on the driving transistor 59. The organic EL element 100 and the organic TFT 50 are covered with the protective film 20. The driving transistor 59 is not particularly limited, but is preferably an electrostatic induction transistor (SIT) as in the present embodiment. The driving transistor 59 includes a source electrode 57 / gate electrode 51 / drain electrode (anode 14 of the organic EL element 100) from the lower layer side.

  The drain electrode 60 and the source electrode 57 of the driving transistor 59 are electrically connected by a through hole 80 that is a hole transport path provided in the interlayer insulating film 72.

  In another embodiment 2, the protective layer is the interlayer insulating film 72. Therefore, by providing the interlayer insulating film 72, the organic EL display device P3 ensures more reliability even in other manufacturing processes that use electromagnetic waves that cause damage to the organic TFT and long-term use by consumers. can do.

  A method for manufacturing the organic EL display device P3 will be described. A barrier film 12 is formed on the substrate 10 to produce an organic TFT 50. An interlayer insulating film 72 is formed so as to cover the surface of the organic TFT 50, and a through hole 80 is produced. Next, a driving transistor 59 is formed. Here, a through hole 80 is provided so that the drain electrode 60 of the organic TFT 50 and the source electrode 57 of the driving transistor 59 are electrically connected. An organic EL element 100 is formed on the driving transistor 59.

  The protective film 20 is formed so as to cover the organic EL element 100, the driving transistor 59, and the interlayer insulating film 72, and the organic EL display device P3 is manufactured.

  In the present embodiment, the protective film 20 is a protective layer particularly when the formation method of the protective film 20 easily generates particle beams such as light having a shorter wavelength than that of visible light such as ultraviolet rays, such as a vacuum process such as CVD. Since the interlayer insulating film 72 protects against at least one of the electromagnetic wave and the particle beam that damage the organic TFT 50, the organic EL display device P3 including the organic TFT 50 with little damage can be provided.

"Organic transistor"
In the above embodiment, an organic EL display device including an organic EL element has been described. However, the present invention is not limited to this, and even an organic transistor that drives other than the organic EL element protects the organic transistor by the protective layer according to this embodiment. Structure to do is applicable. That is, in the above embodiment, the organic EL element may be replaced with a driving element driven by another organic transistor, or the driving element such as the organic EL element may be omitted and the organic transistor alone may be used. It is sufficient that a protective film is formed on the protective layer on the surface layer, whether directly or indirectly.

  Such an organic transistor can be applied to general displays such as a liquid crystal display, an electrophoretic display, electronic paper, and a toner display.

  An organic EL display device P1 as an example was manufactured and compared with a conventional organic EL display device.

"Production method"
The materials of the examples are as follows.

Source / drain electrode: Cr / Au
Gate electrode: Ta, gate insulating film: Ta ₂ O ₅
Interlayer insulation film: Black polymer with UV absorber Organic semiconductor: Pentacene Organic EL anode: ITO
Organic EL organic solid layer: hole injection layer (CuPc)
: Hole transport layer (NPB)
: Light emitting layer (Alq ₃ )
: Electron transport layer (Alq ₃ )
: Electron injection layer (Li ₂ O)
Organic EL cathode: Al
Protective film: SiNx
The manufacturing method of an Example is as follows. On the cleaned plastic film substrate, a gate electrode Ta film was patterned with a thickness of 2000 mm and a width of 20 μm. A Ta ₂ O ₅ film was formed by anodizing the Ta wiring film to obtain a gate insulating film Ta ₂ O ₅ (relative dielectric constant: 24). Thereafter, an Au film using Cr as an adhesive layer was patterned as a source / drain electrode. Thereafter, the organic EL anode ITO was patterned so as to be connected to the drain electrode of the organic transistor. Thereafter, a black polymer was formed as an interlayer insulating film so as to completely cover the organic transistor. At the same time, the black polymer containing the ultraviolet absorber was patterned around the anode of the organic EL element to form a short-circuit prevention film between the cathode and the anode of the organic EL element. An organic layer and a cathode of the organic EL element were sequentially formed, and finally SiNx was formed by plasma CVD as a protective film.

  The manufacturing method of the comparative example is a colorless and transparent interlayer insulating film in which an interlayer insulating film is formed on the organic TFT but no ultraviolet absorber is added.

"Evaluation"
Table 1 below shows the results of comparing the semiconductor characteristics (mobility, on / off characteristics) of the organic TFTs produced in the examples with those of the comparative example.

"Discussion"
In the organic EL display device of the example, it was possible to obtain better semiconductor characteristics (mobility, on / off characteristics) as compared with the comparative example.

Claims (24)

An organic EL display device comprising an organic EL element comprising at least an anode, an organic light emitting layer, and a cathode, and an organic transistor for driving the organic EL element,
Covering the organic transistor, comprising a protective film for protecting at least the organic transistor,
An organic EL display device in which a protective layer that protects the organic transistor from at least one of electromagnetic waves and particle beams is formed between the protective film and the surface of the organic transistor. The organic EL display device according to claim 1,
The organic EL display device, wherein the electromagnetic wave is at least one of infrared light, visible light, and ultraviolet light. The organic EL display device according to claim 1, wherein
The organic EL display device, wherein the particle beam is at least one of alpha rays, beta rays, and neutron rays. An organic EL display device according to any one of claims 1 to 3,
The organic EL display device, wherein the protective layer is a colored transparent layer or an opaque layer. An organic EL display device according to any one of claims 1 to 4,
The organic EL display device, wherein the protective layer is an absorptive layer that absorbs at least one of electromagnetic waves and particle beams. An organic EL display device according to any one of claims 1 to 5,
The organic EL display device, wherein the protective layer is a reflective layer having reflectivity for at least one of electromagnetic waves and particle beams. An organic EL display device comprising an organic EL element comprising at least an anode, an organic light emitting layer, and a cathode and an organic transistor for driving the organic EL element,
A protective layer forming step of forming a protective layer for protecting the organic transistor from at least one of electromagnetic wave and particle beam on the surface of the organic transistor;
A protective film forming step of forming a protective film for protecting the organic transistor on the protective layer. It is a manufacturing method of the organic electroluminescence display according to claim 7,
The method of manufacturing an organic EL display device, wherein the electromagnetic wave is at least one of infrared light, visible light, and ultraviolet light. A method for producing an organic EL display device according to claim 7 or 8,
The method of manufacturing an organic EL display device, wherein the particle beam is at least one of alpha rays, beta rays, and neutron rays. It is a manufacturing method of the organic electroluminescence display according to any one of claims 7 to 9,
The protective layer is a manufacturing method of an organic EL display device which is a colored transparent layer or an opaque layer. It is a manufacturing method of the organic electroluminescence display according to any one of claims 7 to 10,
The said protective layer is a manufacturing method of the organic electroluminescence display which is an absorptive layer which absorbs at least one among electromagnetic waves and a particle beam. It is a manufacturing method of the organic electroluminescence display according to any one of claims 7 to 11,
The method for manufacturing an organic EL display device, wherein the protective layer is a reflective layer having reflectivity for at least one of electromagnetic waves and particle beams. An organic transistor,
A protective film covering the organic transistor and protecting the organic transistor;
An organic transistor in which a protective layer for protecting the organic transistor from electromagnetic waves is formed between the protective film and the surface of the organic transistor. An organic transistor according to claim 13,
An organic transistor in which the electromagnetic wave is at least one of infrared light, visible light, and ultraviolet light. The organic transistor according to claim 13 or 14,
The particle beam is an organic transistor that is at least one of alpha rays, beta rays, and neutron rays. An organic transistor according to any one of claims 13 to 15,
The protective layer is an organic transistor that is a colored transparent layer or an opaque layer. An organic transistor according to any one of claims 13 to 16,
The protective layer is an organic transistor that is an absorptive layer that absorbs at least one of electromagnetic waves and particle beams. An organic EL display device according to any one of claims 13 to 17,
The organic transistor, wherein the protective layer is a reflective layer having reflectivity for at least one of electromagnetic waves and particle beams. An organic transistor manufacturing method comprising:
Forming a protective layer for protecting the organic transistor from electromagnetic waves on the surface of the organic transistor;
A protective film forming step of forming a protective film for protecting the organic transistor on the protective layer. A method for producing an organic transistor according to claim 19,
The method for producing an organic transistor, wherein the electromagnetic wave is at least one of infrared light, visible light, and ultraviolet light. A method for producing an organic transistor according to claim 19 or 20,
The method of manufacturing an organic transistor, wherein the particle beam is at least one of alpha rays, beta rays, and neutron rays. A method for producing an organic transistor according to any one of claims 19 to 21,
The method for producing an organic transistor, wherein the protective layer is a colored transparent layer or an opaque layer. A method for producing an organic transistor according to any one of claims 19 to 22,
The method for producing an organic transistor, wherein the protective layer is an absorptive layer that absorbs at least one of electromagnetic waves and particle beams. A method for producing an organic transistor according to any one of claims 19 to 23,
The method for producing an organic transistor, wherein the protective layer is a reflective layer having reflectivity for at least one of electromagnetic waves and particle beams.