WO2006104210A1

WO2006104210A1 - Active matrix substrate, display device and electronic device

Info

Publication number: WO2006104210A1
Application number: PCT/JP2006/306539
Authority: WO
Inventors: Mayuko Sakamoto; Yoshihiro Izumi; Hiromi Katoh
Original assignee: Sharp Kabushiki Kaisha
Priority date: 2005-03-29
Filing date: 2006-03-29
Publication date: 2006-10-05
Also published as: JP2008170460A

Abstract

In a display device provided with an environmental sensor formed in a peripheral region of an active matrix substrate, sensitivity failure and characteristic deterioration with time, due to deterioration of a surface protection film provided on an upper layer of the environmental sensor, are prevented. The active matrix substrate (2) having a pixel arrangement region wherein a plurality of pixels are arranged is provided with the environmental sensor (11) arranged in the peripheral region around the pixel arrangement region; and the surface protection film (20) arranged on the upper layer of the arrangement layer of the environmental sensor (11) in the peripheral region. The surface protection film (20) is provided with an opening section (22) at a portion equivalent to an upper portion of the arrangement position of the environmental sensor (11).

Description

Specification

Active matrix substrate, display device and electronic device

Technical field

The present invention relates to a display device such as a liquid crystal display device and an EL (Electronic Luminescent) display device. The present invention also relates to an active matrix substrate used for these display devices.

Background art

[0002] Flat panel display devices typified by liquid crystal display devices have features such as thin and light weight and low power consumption, and are aimed at improving display performance such as colorization, high definition, and video compatibility. Due to advanced technology development, mobile phones, PDAs (Personal Digital Assistants), DVD players, mopile game devices, notebook PCs, PC monitors, TVs, and other information devices, TV devices, amusement devices, etc. Embedded in electronic equipment.

[0003] In such a background, a technique for attaching an environmental sensor for detecting a surrounding environment to a display device has begun to be used. A typical example of this environmental sensor is an optical sensor that detects the brightness of the surrounding environment. In recent years, a display system with an automatic dimming function that automatically controls the brightness of the display device according to the brightness of the usage environment has been proposed with the aim of further improving the visibility of the display device and reducing power consumption. It has been.

[0004] A display system including such an optical sensor is disclosed in, for example, Japanese Patent Laid-Open Nos. 4-174819 and 5-241512. In JP-A-4-174819 and JP-A-5-241512, an optical sensor, which is a discrete component, is provided in the vicinity of the display device, and based on the use environment illuminance detected by the optical sensor, A method for automatically controlling brightness is disclosed. As a result, the brightness is automatically adjusted according to the brightness of the surrounding environment, such as increasing the display brightness in a bright environment such as daytime or outdoors, and decreasing the display brightness in a relatively dark environment such as nighttime or indoors. Light). In this case, the viewer of the display device does not feel the screen dazzling in a dark environment, and visibility can be improved. In addition, it achieves lower power consumption and longer life compared to usage methods that keep the display brightness high regardless of whether the environment is bright or dark. be able to. Furthermore, since the brightness is automatically adjusted (dimming) based on the detection information of the optical sensor, the user's hands are not bothered.

[0005] As described above, a display system equipped with an automatic light control function can achieve both good visibility and low power consumption against changes in the brightness of the usage environment. It is particularly useful for mopile devices (cell phones, PDAs, mono-game devices, etc.) that have many opportunities to use and require battery operation.

[0006] On the other hand, Japanese Patent Application Laid-Open No. 2002-62856 discloses a structure in which an optical sensor, which is a discrete component, is incorporated in a display device as an example of a structure in which an environmental sensor is incorporated in the display device. FIG. 14 is a schematic configuration diagram excluding the casing of the liquid crystal display device disclosed in Japanese Patent Laid-Open No. 2002-62856, and FIG. 15 is a cross-sectional view of the optical sensor mounting portion.

[0007] In this liquid crystal display device, a substrate (active matrix substrate) 901 on which an active element such as a thin film transistor (TFT) is formed is bonded to a counter substrate 902 via a seal resin 925, and a liquid crystal layer is formed in the gap therebetween. 903 is sandwiched. Here, an optical sensor 907, which is a discrete component, is disposed in a peripheral portion of the active matrix substrate 901, that is, in a peripheral region S (frame region) where no counter substrate exists. In FIG. 15, a region indicated by H is a region where the counter substrate 902 is present on the active matrix substrate 901 (display region H). Further, a backlight system 914 is provided on the side of the active matrix substrate 901 opposite to the side on which the counter substrate 902 is disposed. The casing 915 is arranged so as to cover the side of the knocklight system 914 opposite to the side where the active matrix substrate 901 is arranged and the periphery of the peripheral region S. An opening 916 is provided at a position of the housing 915 facing the optical sensor 907, and light entering the optical sensor 907 is incident from the opening 916.

As described above, the structure in which the optical sensor 907 is disposed in the peripheral region S has the following characteristics. That is, when the display mode of the liquid crystal display device is a transmissive type or a transflective type, it is necessary to provide the backlight system 914 on the back surface of the active matrix substrate 901, but the optical sensor 907 is arranged in the peripheral region S described above. Is a knock light system that prevents light emitted from the backlight system 914 from directly reaching the light sensor 907. It is possible to minimize the malfunction of the optical sensor 907 due to the light emitted from the light source. Further, in a normal liquid crystal display device, a force sensor 907 having a polarizing plate (not shown) attached to the front side of the counter substrate 902 is disposed in the peripheral region S. Therefore, the light sensor 907 It is possible to guide the light sensor with a sufficient amount of external light that is not blocked by the polarizing plate on the counter substrate 902. As a result, the optical sensor 907 can obtain high V and SZN.

[0009] On the other hand, in recent years, the manufacturing technology of display devices has rapidly progressed, and an IC chip and various circuit elements that have been conventionally mounted as discrete components on the periphery of the display device can be used as a constituent circuit of the display device. At the time of formation, a technique for monolithically forming the display device (specifically, on a glass substrate constituting the display device) by the same process has been established.

[0010] For example, in Japanese Patent Application Laid-Open No. 2002-175026, when a display area portion is formed on a substrate, a vertical drive circuit, a horizontal drive circuit, a voltage conversion circuit, and a timing generation circuit are formed around the display area portion. An example in which an optical sensor circuit and the like are formed monolithically by the same process is disclosed. Such monolithic formation of discrete components in a display device enables reduction of the number of components and component mounting process, and can achieve downsizing and cost reduction of an electronic device incorporating the display device. Of course, it is possible to monolithically form the optical sensor used for the luminance adjustment (dimming) of the display device described above, a dedicated circuit for the optical sensor (light amount detection circuit), and the like in the display device. Japanese Laid-Open Patent Publication No. 2002-62856 also describes a technique for forming a peripheral circuit and an optical sensor monolithically on the substrate in the same process, instead of the discrete part optical sensor.

Incidentally, as an active element used in an active matrix display device, a thin film transistor (TFT) using an amorphous Si film or a polycrystalline Si film is generally used. As described above, when an active element and various circuit elements are formed monolithically on the same substrate, a TFT using a polycrystalline Si film is mainly used.

[0012] In view of this, a structure of a TFT including a polycrystalline Si film formed in each pixel of the pixel array region (display region) as a semiconductor layer will be described with reference to FIG. The TFT structure described here is called a “top gate structure” or “positive stagger structure”, and includes a gate electrode on a semiconductor film (polycrystalline Si film) serving as a channel. [0013] TFT 500 includes a polycrystalline Si film 511 formed on a glass substrate 510, a gate insulating film 512 formed so as to cover the polycrystalline Si film 511, and a gate electrode formed on the gate insulating film 512. 513 and a first interlayer insulating film 514 formed so as to cover the gate electrode 513 and the gate oxide film 512. The source electrode 517 formed on the first interlayer insulating film 514 is electrically connected to the source region 511c of the semiconductor film through a contact hole penetrating the first interlayer insulating film 514 and the gate insulating film 512. ing. Similarly, the drain electrode 515 formed on the first interlayer insulating film 514 is electrically connected to the drain region 51 lb of the semiconductor film through a contact hole that penetrates the first interlayer insulating film 514 and the gate insulating film 512. It is connected to the. Further, a second interlayer insulating film 518 is formed so as to cover them.

[0014] In such a structure, the region of the semiconductor film facing the gate electrode 513 functions as the channel region 511a. The regions other than the channel region 511a of the semiconductor film are highly doped with impurities, and function as the source region 511c and the drain region 51 lb.

[0015] Although not shown here, in order to prevent deterioration of electrical characteristics due to hot carriers, impurities are reduced in concentration on the channel region side of the source region 51 lc and on the channel region side of the drain region 51 lb. Doped LDD (Lightly Doped Drain) regions are formed.

Further, a pixel electrode 519 for supplying an electric signal to the driven display medium is formed on the second interlayer insulating film 518. The pixel electrode 519 is electrically connected to the drain electrode 515 through a contact hole provided in the second interlayer insulating film 518. The pixel electrode 519 generally requires flatness, and the second interlayer insulating film 518 existing below the pixel electrode 519 is required to function as a flat film. Therefore, the second interlayer insulating film 518 is preferably an organic film (thickness: 2 to 3 m) such as acrylic resin. In addition, the second interlayer insulating film 518 is required to have a patterning performance in order to form a contact hole in the TFT 500 and take out an electrode in a peripheral region, and usually a photosensitive organic film is often used.

On the other hand, in a display device including a TFT having the above-described structure in the display region, an optical sensor for detecting the brightness of outside light is monolithically formed in the peripheral region of the display device. In this case, if the increase in the manufacturing process is to be minimized, the element structure of the optical sensor is limited.

FIG. 17 is a schematic cross-sectional view showing a cross-section of the element structure of the optical sensor 400 that satisfies these conditions. A semiconductor film 411 constituting an optical sensor is formed on a glass substrate 410, and a doping region (p region 41 lc or n region 41 lb) force of the semiconductor film 411 is applied to a non-doping region (i region 41 la). It is formed in the horizontal direction (plane direction) instead of the vertical direction (stacking direction). In general, a structure having a PIN junction in the lateral direction (plane direction) parallel to the forming surface is called a lateral type PIN photodiode!

Further, each member constituting the optical sensor 400 is formed by the same process as each member constituting the TFT of FIG. For example, an insulating film 412 made of the same material as the gate insulating film 512 is formed on the upper layer of the semiconductor film 411, and the same material as that of the source electrode 517 is formed on the upper layer of the first interlayer insulating film 414. The p-side electrode 417 formed by the same process and the drain electrode 515 are made of the same material. The n-side electrode 415 formed by the same process is formed.

Furthermore, a surface protective film 418 formed of the same material and the same process as the second interlayer insulating film 518 is formed on the upper layer. In this case, in the pixel array region (display region), the second interlayer insulating film 518 electrically insulates the interlayer between the TFT 500 formation layer and the pixel electrode 519 formation layer, and improves the flatness of the formation surface of the pixel electrode 519. In the peripheral area (frame area) outside the pixel array area (outside the display area), the surface protective film 418 of the active matrix substrate is used as the surface sensor film 418 and the electrodes connected to the optical sensor 400 It plays a protective role. Thus, it is desirable that the surface protective film 418 is formed by the same process as the second interlayer insulating film 518 and is formed on the substantially entire surface from the display region to the peripheral region.

Such an optical sensor 400 shown in FIG. 17 can be used in place of the optical sensor (discrete component provided in the peripheral area) of the conventional display device shown in FIG. 14, and When incorporating the display device shown in Fig. 14 into electronic equipment, it is possible to reduce the number of components and the component mounting process.

[0022] In addition, in JP-A-6-188400, as another example of the structure of the optical sensor 400, a monolithic TFT is formed on the same substrate as a TFT having a bottom gate structure (inverted stagger structure) using a non-crystalline Si film. An optical diode having an MIS (MetaHnsulator-Semiconductor) type junction that can be formed is described, and such an MIS type photodiode can also be employed.

Disclosure of the invention

Problems to be solved by the invention

[0023] However, when it was attempted to realize the display device by forming the above-described optical sensor shown in FIG. 17 in the peripheral region on the active matrix substrate, it became clear that the following problems occurred.

As shown in FIG. 15, the active matrix substrate constituting the display device is roughly divided into a display region (H) and a peripheral region (frame region) (S). The latter peripheral region (S) In addition, the light shielding region (S1) shielded by the housing and the non-light shielding region (S2) that is located in the opening provided in the housing (for example, corresponding to the opening 916 in FIG. 15) and receives external light. ). Since the above-described optical sensor needs to receive external light, it is naturally necessary to be disposed in the non-shielding region (S2) on the active matrix substrate.

[0025] The second interlayer insulating film 518 (surface protective film 418) has been described in the previous stage that the display region H force is formed on substantially the entire surface over the peripheral region S. The second interlayer insulating film 518 (surface Considering how external light (assumed to be used under outdoor sunlight) reaches the protective film 41 8), it is as follows.

[0026] Display area (H): Since a part of external light is absorbed by a polarizing plate (not shown) and a color filter provided on the counter substrate 902, the second interlayer isolation on the active matrix substrate 901 is absorbed. The external light reaching the edge film 518 is limited to light in a specific wavelength region. In particular, since almost 100% of ultraviolet rays are absorbed by the polarizing plate and the color filter, no ultraviolet rays reach the second interlayer insulating film 518.

Light shielding area (S1): All external light is shielded by the casing 915. Of course, no ultraviolet rays reach the second interlayer insulating film 518 on the active matrix substrate 901.

Non-shielding region (S2): Since external light is directly incident, light of all wavelengths (including ultraviolet rays) included in the external light reaches the second interlayer insulating film on the active matrix substrate.

That is, considering the case where the display device is used outdoors, ultraviolet rays contained in sunlight are Only in the non-light-shielding region (S2) in the peripheral region, the second interlayer insulating film on the active matrix substrate can be reached.

[0030] As described above, the second interlayer insulating film is formed of an organic film having photosensitivity such as acrylic resin, but the organic film used here has so far been considered resistant to ultraviolet rays. The power was unthinkable. Therefore, when we conducted a light resistance test of the second interlayer insulating film located in the non-light-shielding region (S2), the phenomenon that the film deteriorates due to long-term ultraviolet irradiation, that is, the initially transparent film turned brownish Or it turned out that the phenomenon of becoming cloudy occurs. Furthermore, as a result, it was found that the transparency of the second interlayer insulating film was impaired, and the external light reaching the photosensor located below it was reduced, resulting in poor sensitivity of the photosensor and changes in characteristics over time. . This phenomenon is a problem related to the reliability of display devices equipped with optical sensors and needs to be resolved.

[0031] Even if another environmental sensor (temperature sensor, humidity sensor) is used instead of the optical sensor, if the film quality of the second interlayer insulating film deteriorates, the reliability of the environmental sensor under the second interlayer insulating film deteriorates. Will need to be resolved.

As a method for solving such a problem, it is effective to improve the ultraviolet resistance of the second interlayer insulating film. However, the existing second interlayer insulating film resin material that has already been optimized for other required specifications such as large area coating performance, patterning property, flatness, heat resistance against process temperature, etc. Further improvement is a concern for performance trade-offs. Therefore, it is desirable to take measures by other methods based on the premise of using the current second interlayer insulating film.

Therefore, the present invention provides an active matrix substrate and a display device provided with an environmental sensor (for example, an optical sensor) formed in a peripheral region of the active matrix substrate, and a surface protective film above the arrangement layer of the environmental sensor. It is an object of the present invention to provide an active matrix substrate and a display device that can prevent the deterioration of sensitivity of the environmental sensor and the deterioration of characteristics over time due to the deterioration of the surface protective film.

Means for solving the problem

[0034] The active matrix substrate of the present invention is an active matrix substrate having a pixel array region in which a plurality of pixels are arrayed, and the pixel array region includes a plurality of electrode wirings. A plurality of active elements, an interlayer insulating film provided on the plurality of electrode wirings and the plurality of active elements, and a plurality of pixel electrodes formed on the interlayer insulating film, In the active matrix substrate, an environmental sensor disposed in a peripheral region existing around the pixel array region, and a surface protective film provided in a layer above the environmental sensor disposed layer in the peripheral region. The surface protective film includes an opening in a portion corresponding to the upper position of the environment sensor arrangement position.

[0035] Further, the display device of the present invention includes the active matrix substrate, a counter substrate disposed so as to face a surface of the active matrix substrate on which the active element is formed, and the active matrix. And a display medium disposed in a gap between the substrate and the counter substrate.

[0036] Further, an electronic apparatus of the present invention is characterized by including the display device according to the present invention.

The invention's effect

[0037] The active matrix substrate of the present invention includes an opening in a portion corresponding to an upper portion of the environmental sensor placement position of the surface protective film arranged on the upper layer of the environmental sensor, and is therefore included in external light. It is possible to avoid the phenomenon that the surface protective film is altered by ultraviolet rays. As a result, it is possible to realize an environmental sensor with good sensitivity and small change with time, and it is possible to realize an active matrix substrate and display device with excellent reliability, and an electronic device using the same.

Brief Description of Drawings

FIG. 1 is an overall configuration diagram showing an outline of a display device according to a first embodiment.

FIG. 2 is a cross-sectional view showing a state in which the display device according to Embodiment 1 is incorporated in a housing.

FIG. 3 is a schematic cross-sectional view showing a structure of a pixel in a pixel array region (display region) of the display device according to Embodiment 1.

FIG. 4 is a schematic cross-sectional view of a peripheral region of the display device according to Embodiment 1.

FIG. 5 (a) is a schematic cross-sectional view showing the structure of the photosensor according to Embodiment 1. Fig. 5 ( b) is a schematic cross-sectional view showing a modified example of the structure of the photosensor according to Embodiment 1. FIG.

FIG. 6 (a) is a schematic cross-sectional view showing an outline of a display device according to Embodiment 2. FIG. 6B is a schematic cross-sectional view showing a modification of the display device according to the second embodiment. (c) is a schematic cross-sectional view showing a modification of the display device according to Embodiment 2. FIG.

FIG. 7 is a schematic cross-sectional view of a peripheral region of the display device according to the second embodiment.

FIG. 8 is a schematic plan view of a display device according to Embodiment 3, and a cross-sectional view taken along line A1-A2.

FIG. 9 is a schematic plan view of a display device according to Embodiment 4 and a sectional view taken along line B1-B2.

FIG. 10 is an overall configuration diagram showing an outline of a peripheral area of a display device according to a fifth embodiment.

FIG. 111 is a schematic cross-sectional view (modification) of the peripheral region of the display device according to Embodiment 5.

FIG. 12 is a schematic cross-sectional view (modification example) of the peripheral region of the display device according to Embodiment 5.

FIG. 13 is a block diagram showing a schematic configuration of an electronic apparatus according to an embodiment of the present invention.

FIG. 14 is an overall configuration diagram of a conventional liquid crystal display device.

FIG. 15 is a schematic sectional view of a photosensor mounting portion of a conventional liquid crystal display device.

FIG. 16 is a schematic cross-sectional view of a conventional TFT formed in a pixel array region of an active matrix substrate.

FIG. 17 is a schematic cross-sectional view of a conventional photosensor formed in a peripheral region of an active matrix substrate.

BEST MODE FOR CARRYING OUT THE INVENTION

[Embodiment 1]

Hereinafter, with reference to the drawings, an outline of a display device according to Embodiment 1 of the present invention and an active matrix substrate used in the display device will be described taking a liquid crystal display device as an example. FIG. 1 is an overall configuration diagram of a display device 1 according to the present invention. FIG. 2 is a cross-sectional view showing a state in which the display device 1 is incorporated in a housing. The display device 1 includes an active matrix substrate 2 in which a large number of pixels 5 are arranged in a matrix form, and a counter substrate 3 disposed so as to face the active matrix substrate 2. It has a structure in which the liquid crystal is sandwiched. The active matrix substrate 2 and the counter substrate 3 are bonded together by a frame-like seal resin 25 along the outer periphery of the counter substrate 3.

[0041] Each pixel 5 of the active matrix substrate 2 is provided with a thin film transistor (TFT) 6 and a pixel electrode 7 for driving the display medium 4, and the counter substrate 3 has a counter electrode (FIG. 1). A cocoon (not shown) and a color filter (not shown in Fig. 1) are formed!

The active matrix substrate 2 has an area (pixel arrangement area) 8 in which the pixels 5 are arranged and a peripheral area 9 close to the pixel arrangement area, and the counter substrate 3 covers the pixel arrangement area 8. Both are disposed so that a part of the peripheral region 9 is exposed.

[0043] Further, in the peripheral region 9 of the active matrix substrate 2, an FPC (Flex¾le Printed Circuit) 10 for connecting an external drive circuit 30 to the display device 1 is mounted on the terminal 38. An optical sensor 11 for detecting the brightness of external light, which is an example, is provided. In addition, other peripheral circuits (a drive circuit (not shown) for driving the TFT 6 in the pixel array region 8 based on an input signal from an external drive circuit), wiring connected to the optical sensor 11 and the drive circuit ( 36) and a lead-out wiring (not shown) from the pixel array region 8 is also provided.

The TFT 6 formed in the pixel array region 8 and the optical sensor 11 formed in the peripheral region 9 are monolithically formed on the same substrate by substantially the same process. In other words, some components of the optical sensor 11 are formed at the same time as some components of the TFT 6.

Then, as shown in FIG. 2, the display device 1 shown in FIG. 1 is incorporated into a casing 35 with an opening, as in the conventional display device shown in FIG. The opening 37 of the housing 35 is disposed so as to oppose the position where the optical sensor 11 is disposed, and external light reaches the optical sensor 11 through the opening 37. In FIG. 2, 39 is a circuit board. [0046] Further, the display device 1 uses a transmissive mode using transmitted light as its display mode. Accordingly, the backlight system 12 is provided on the side (back side) of the active matrix substrate 2 in the housing 35 opposite to the counter substrate arrangement side. Note that the backlight system 12 is not necessary when a reflective display mode using reflection of external light is used as the display mode or when a self-luminous element such as an EL is used as the display medium.

[0047] In addition, since the above-described optical sensor 11 is intended to detect outside light, if the light of the knocklight system 12 is incident on the optical sensor 11, the optical sensor 11 malfunctions! / The title arises. Therefore, the force that prevents the backlight system 12 from being disposed below the portion where the optical sensor 11 is disposed on the active matrix substrate 2 (the side opposite to the side where the optical sensor 11 is disposed on the active matrix substrate 2) or the active matrix A light shielding member (aluminum tape or the like) is provided on the back surface of the optical sensor mounting portion of the substrate 2 so that the light from the knock light system 12 does not enter the optical sensor 11.

[0048] The display device 1 of the present embodiment described above is applied to a display system with an automatic dimming function that detects the illuminance of outside light using the optical sensor 11 and automatically controls the display luminance in accordance with the detected illuminance. be able to. That is, a control circuit that controls the luminance of the backlight system 12 or the luminance signal of the display signal based on the brightness information of the external light output from the optical sensor 11 provided in the peripheral region 9 of the active matrix substrate 2. By providing this, it is possible to automatically control the display brightness of the display device 1.

This control circuit may be formed integrally with the display device 1 or may be formed separately from the display device 1. Examples of the case where the display device 1 is integrally formed include a case where the active matrix substrate 2 is formed monolithically, or a control circuit formed separately from the active matrix substrate 2 to form a COG (Chip On Grass ) Method, etc., when mounted on the active matrix substrate 2. In addition, as an example where the display device 1 is formed separately from the display device 1, a control circuit is formed separately from the active matrix substrate 2 and connected to the active matrix substrate 2 via an FPC or the like. One example is a case where a control circuit is arranged in an electronic device equipped with the device 1 and a control circuit force signal is transmitted to the active matrix substrate 2.

[0050] By using this control circuit, the display brightness is increased in bright environments such as outdoors, and at night or in the room. If the brightness is adjusted (dimming) automatically so that the display brightness is reduced in a relatively small environment, such as inside, it is possible to reduce the power consumption and extend the life of the display device. .

[0051] Next, the detailed structure of the display device 1 of the present invention will be described with reference to FIG. 3, FIG. 4, and FIG. FIG. 3 is a schematic cross-sectional view schematically showing a cross-sectional structure of the pixel array region (display region) 8 per pixel 5 in the display device 1 of FIG. A display medium (liquid crystal in this embodiment) 4 is sandwiched between the active matrix substrate 2 and the counter substrate 3. A thin film transistor (TFT) 6 and a pixel electrode 7 for driving the liquid crystal 4 are formed on the active matrix substrate 2.

Hereinafter, the structure of the TFT 6 using the polycrystalline Si film used in the present embodiment and the pixel 5 including the TFT 6 will be described with reference to FIGS. 1 and 3. The structure of TFT 6 used here is called a “top gate structure” or “positive stagger structure”, and has a gate electrode 16 on the upper layer of a semiconductor film (polycrystalline Si film) 13 to be a channel. When a plurality of layers are stacked on the substrate in this way, the substrate side is described as the lower side, and the direction in which the distance from the substrate to the layer is increased is described as the upper side.

[0053] As the substrate 14 serving as the base substrate, a glass substrate can be mainly used. For example, non-alkali barium borosilicate glass or alumino borosilicate glass is used. The TFT 6 uses a polycrystalline Si film 13 formed on the substrate 14 and a gate insulating film 15 formed so as to cover the polycrystalline Si film 13 (for example, an oxide silicon film or a silicon nitride film). A gate electrode 16 formed on the gate insulating film 15 (for example, Al, Mo, T, or an alloy thereof can be used) and a first electrode formed so as to cover the gate electrode 16. Interlayer insulating film 17 (for example, a silicon oxide film or a silicon nitride film can be used).

Here, in the polycrystalline Si film 13, a region facing the gate electrode 16 through the gate insulating film 15 functions as a channel region 13a. The region other than the channel region of the polycrystalline Si film 13 is an n + layer doped with impurities at a high concentration, and functions as a source region 13b and a drain region 13c. Although not shown here, LDD (Lightly Doped Drain) in which impurities are lightly doped on the channel region side of the source region 13b and the channel region side of the drain region 13c to prevent deterioration of electrical characteristics due to hot carriers. A region is formed.

[0055] Note that a base coat film (for example, an oxide silicon film or a silicon nitride film can be used) may be provided on the surface of the glass substrate (under the polycrystalline Si film 13). The polycrystalline Si film 13 can be obtained by crystallizing a semiconductor film (amorphous Si film) having an amorphous structure by heat treatment such as laser annealing or RTA (Rapid Thermal Annealing).

A source electrode 18 (for example, Al, Mo, T, or an alloy thereof can be used) is formed on the first interlayer insulating film 17. The source electrode 18 is electrically connected to the source region 13 b of the polycrystalline Si film 13 through a contact hole that penetrates the first interlayer insulating film 17 and the gate insulating film 15. Similarly, the drain electrode 19 (for example, Al, Mo, T, or an alloy thereof can be used) formed on the first interlayer insulating film 17 is connected to the first interlayer insulating film 17 and the gate insulating film 15. It is electrically connected to the drain region 13c of the polycrystalline Si film 13 through the penetrating contact hole.

The above is the basic structure of the TFT 6 used here. In the pixel array region (display region) 8, a second interlayer insulating film 20 is further formed so as to cover the TFT 6 described above. Here, since the second interlayer insulating film 20 is required to flatten the unevenness of the lower layer in addition to the insulating property between the layers, an organic film that can be formed by coating or printing is mainly used.

Further, a pixel electrode 7 (for example, ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), Al, etc. can be used) is formed on the second interlayer insulating film 20. The The pixel electrode 7 is electrically connected to the drain electrode 19 through a contact hole 20 a formed in the second interlayer insulating film 20. As the second interlayer insulating film 20, it is preferable to use an organic insulating film having photosensitivity, whereby a contact hole 20a is easily formed in the second interlayer insulating film by mask exposure and development processing. be able to. Examples of such an organic insulating film having photosensitivity include acrylic, polyimide, and BCB (Benzo-Cyclo-Butene). In FIG. 3, 30 is a glass substrate which is a base substrate of the counter substrate 3, 31 is a color filter, and 32 is a counter electrode formed on the entire surface of the counter substrate 3.

FIG. 4 is a schematic cross-sectional view of the peripheral region 9 in the display device 1 of FIG. 1, and FIG. b) is a cross-sectional structure diagram of the optical sensor 11 formed in the peripheral region 9.

Hereinafter, the structure of the optical sensor 11 will be described with reference to FIGS. 4 and 5A. The structure of the optical sensor 11 used here is called a “lateral structure photodiode”, and includes a diode in which a semiconductor PIN junction is formed in the surface direction (lateral direction) of the substrate.

A PIN diode made of a polycrystalline Si film 21 is formed on a glass substrate 14 (a substrate common to the substrate on which the TFT is formed) serving as a base substrate. The polycrystalline Si film 21 of the optical sensor 11 is formed simultaneously with the same process as the polycrystalline Si film 13 of the TFT 6 (see FIG. 3) in the pixel array region 8 (display region). Therefore, the polycrystalline Si film 21 and the polycrystalline Si film 13 have the same film thickness. The PIN junction is formed by a p + layer (region 21b) and n + layer (region 21c) doped with impurities at a high concentration, and an i layer (region 21a) not doped with impurities. Instead of the i layer, it is possible to use a lightly doped p-layer or n layer alone or in combination.

[0062] Furthermore, a gate insulating film 15 (for example, an oxide silicon film or a silicon nitride film, which is common to the constituent members of the pixel array region 8 can be used so as to cover the polycrystalline Si film 21 having the PIN junction. ) And a first interlayer insulating film 17 (for example, a silicon oxide film or a silicon nitride film can be used). The gate insulating film 15 and the first interlayer insulating film 17 shown in FIG. 5A are the same as the gate insulating film 15 and the first interlayer insulating film 17 (see FIG. 3) of the TFT 6 in the pixel array region 8 up to the peripheral region 9. It is an extension. The p-side electrode 3 3 formed on the first interlayer insulating film 17 (for example, Al, Mo, T, or an alloy thereof can be used) is connected to the first interlayer insulating film 17 and the gate insulating film 15. It is electrically connected to the ρ + region 21 b of the polycrystalline Si film 21 through a penetrating contact hole. Similarly, the n-side electrode 34 (for example, Al, Mo, T, or an alloy thereof can be used) formed on the first interlayer insulating film 17 is used for the first interlayer insulating film 17 and the gate insulating film. It is electrically connected to the η + region 21 c of the polycrystalline Si film 21 through a contact hole that penetrates the film 15.

The portions of the p-side electrode 33 and the n-side electrode 34 that are exposed on the surface of the first interlayer insulating film 17 are the electrode portions of the photosensor 11.

Note that the contact to the first interlayer insulating film 17 and the gate insulating film 15 in the peripheral region 9 The formation of the holes is simultaneously performed by the same process as the formation of the contact holes to the first interlayer insulating film 17 and the gate insulating film 15 in the pixel array region 8. The p-side electrode 33 and the n-side electrode 34 are formed simultaneously by the same process as the formation of the source electrode 18 and the drain electrode 19 of the TFT 6.

The above is the basic structure of the optical sensor 11. As described above, the constituent members of the optical sensor 11 are substantially the same as the constituent members of the TFT 6 in the pixel arrangement region described above, and the manufacturing process is almost common. Therefore, both manufacturing processes can be made common. In this way, the TFT 6 in the pixel array region 8 and the photosensor 11 in the peripheral region 9 are monolithically formed on the active matrix substrate 2.

[0066] In addition to the optical sensor 11, the peripheral area 9 includes a peripheral circuit (a driving circuit for driving the TFT 6 in the pixel array area 8 based on an input signal from an external driving circuit (not shown). ), A wiring 36 (see FIG. 2) connected to the optical sensor 11 and the drive circuit, and a lead-out wiring (not shown) from the pixel array region 8 are also formed. For the purpose of protecting them, the second interlayer insulating film 20 (acrylic, common to the components of the pixel array region 8 is formed on the upper layer so as to cover the optical sensor 11, the drive circuit, and various wirings in the peripheral region. An organic insulating film such as polyimide or BCB is formed.

The second interlayer insulating film 20 serves as a surface protective film in the peripheral region 9. However, in this second interlayer insulating film 20, as shown in FIGS. 2 and 5 (a), an opening 22 which is a feature of the present embodiment is intentionally formed above the optical sensor 11. Yes. The opening 22 can be formed simultaneously with the formation of the contact hole 20 a in the second interlayer insulating film 20 in the pixel array region 8. That is, the second interlayer insulating film 20 functions as an interlayer insulating film in the pixel array region 8 and functions as a surface protective film of the photosensor 11 in the peripheral region 9.

That is, the structural feature of the display device 1 of the present embodiment is that the active matrix substrate 2 includes the pixel array region 8 (display region) and the peripheral region 9, and the brightness of external light in the peripheral region. The optical sensor 11 for detecting the thickness is formed, the second interlayer insulating film 20 used in the pixel array region 8 is also formed in the peripheral region, and the second interlayer insulating film (surface protective film) 20 The opening 22 is provided in a portion corresponding to the upper side of the optical sensor 11. As a result, even if the external light contains ultraviolet light, the optical sensor 11 has no second interlayer insulating film 20 on the upper part of the optical sensor 11, so that the second interlayer insulating film caused by the ultraviolet light is present. Unaffected by 20 discoloration. Therefore, it is possible to accurately detect changes in the brightness of outside light stably over a long period of time. Conventionally, it has been necessary to design the optical sensor 11 with excessive specifications in anticipation of deterioration of the second interlayer insulating film 20 due to ultraviolet rays (decrease in transmittance). It becomes possible to optimally design the optical sensor 11 that does not need to worry about the decrease in the transmittance of the insulating film 20. For this reason, the optical sensor 11 itself can be made smaller than before. As a result, the peripheral region 9 in which the optical sensor 11 is arranged can be minimized, and it is possible to contribute to the narrow frame of the display device.

In the above embodiment, the second interlayer insulating film formed in the pixel array region 8 and the surface protective film formed in the peripheral region 9 are formed by the same material and the same process. The force described for the example is not limited to this. Even if both are formed by different materials or different processes, if the surface protection film has insufficient UV resistance, the above structure (the second interlayer insulating film 20 as the surface protection film of the optical sensor 11) By adopting a structure in which the opening 22 is provided, the effect of the present invention can be obtained. In particular, when the surface protective film (second interlayer insulating film 20) has photosensitivity, the opening 22 is formed by photolithography.

, Effective in terms.

As described above, when the opening 22 is formed in the second interlayer insulating film 20 above the photosensor 11, the p-side electrode 33 and the n-side electrode 34 made of metal are exposed. Therefore, when there is a concern about oxidation or corrosion due to contact of these two electrodes with the outside air, it is preferable to form a protective member 42 on both electrodes as shown in FIG. 5 (b). As the protective member 42, an oxide film that is stable against the outside air (oxygen, moisture) and excellent in resistance to ultraviolet rays is suitable. For example, the same conductive oxide film as the pixel electrode 7 (for example, ITO, Can be used. In addition, it is preferable to form the protective member 42 by the same process as that for the pixel electrode 7 because no additional process is required. When the conductive protective member 42 is provided in the opening 22 as described above, the ρ-side electrode 33 and the η-side electrode 34 are not short-circuited via the protective member 42, so that each electrode The protection member 42 also needs to be patterned according to the pattern shape. [0072] [Embodiment 2]

As Embodiment 2 of the present invention, a case where the above-described optical sensor 11 is provided with a protective member made of other than a conductive oxide film will be described. Since the optical sensor 11 is the same as that described in the first embodiment except that the protective member 42 is provided without using the protective member 42, the same components are denoted by the same reference numerals. Therefore, the description is omitted.

FIG. 6 (a) is a cross-sectional structure diagram in the case where a protective member 24 is added to the optical sensor 11 described above. That is, the protective member 24 is provided in the opening 22 formed in the second interlayer insulating film 20 on the optical sensor 11. As a result, it is possible to protect the upper surface of the photosensor 11 exposed in the peripheral region 9, and it is possible to ensure high reliability against not only ultraviolet rays but also outside air.

[0074] The protective member 24 used here has a large area coating performance like the second interlayer insulating film 20 as long as it has transparency to the wavelength range of light received by the optical sensor 11 and resistance to ultraviolet rays. Strict specs such as turning, flattening and heat resistance to process temperature are not required. Therefore, a wide range of materials can be applied as the protective member 24. For example, materials such as fluorine-based resin, silicone resin, epoxy resin, and acrylic resin can be used. Specifically, a silicone potting material (for example, SE1880) manufactured by Toray Dow Koung Co., Ltd., Aflex (registered trademark), CYTOP (registered trademark), etc. manufactured by Asahi Glass Co., Ltd. can be used. In order to keep the transmittance high, it is preferable to employ a resin that does not contain a filler that causes light scattering. In consideration of the simplicity of the process for forming the protective member, it is preferable to employ a room-temperature curable resin (such as a room-temperature curable silicone resin) that does not require a curing oven.

[0075] In FIG. 6 (a), the protective member 24 is a force showing such a configuration that it covers the entire opening 22 of the second interlayer insulating film 20, as shown in FIG. 6 (b). For example, when the opening 22 is wider than the size of the optical sensor 11, a protective member 24 is disposed in a part of the opening 22 so as to cover at least the optical sensor 11 rather than covering the entire opening. Also good. Further, as shown in FIG. 6 (c), for example, the protective member 24 may be disposed in a part of the opening 22 so as to cover at least the position where the light enters the optical sensor 11. Also, if you are concerned about oxidation or corrosion of the electrodes (P-side electrode 33 and n-side electrode 34) exposed in the opening 22, In the first embodiment, the protective member 24 may be disposed in a part of the opening 22 so as to cover at least both the electrodes in the same manner as the protective member 42 shown in FIG. 5 (b). Further, the protective member 42 described in FIG. 5B of Embodiment 1 can be used in combination with the protective member 24.

FIG. 7 is a schematic cross-sectional view of the peripheral region 9 when the protective member 24 is added on the optical sensor 11. As shown in FIG. 7, the height X of the protective member 24 in the normal direction of the TFT formation surface of the active matrix substrate 2 (the direction of the arrow in FIG. 7) is the thickness of the counter substrate 3 and the display medium 4 It is desirable that the total of Y is less than or equal to Y. This facilitates securing a clearance between the protective member 24 and the housing when the display device 1 is assembled into the housing.

[0077] [Embodiment 3]

FIG. 8 is a schematic plan view of the display device 26 according to the third embodiment and a cross-sectional view taken along line A1-A2. The configuration not described is the same as that of the display device of the second embodiment.

The seal resin 25 is formed along substantially the outer periphery of the counter substrate 3, and an opening is formed in a part of the side facing the peripheral region 9 of the active matrix substrate 2. This opening is an injection port 27 for injecting liquid crystal as the display medium 4 into the gap between the active matrix substrate 2 and the counter substrate 3. After the liquid crystal is injected from the injection port 27, the liquid crystal is sealed between the active matrix substrate 2 and the counter substrate 3 by sealing with an oleaginous sealing member 28.

Here, in display device 26 of Embodiment 3, optical sensor 11 is arranged in the vicinity of injection port 27 for injecting liquid crystal (preferably within a distance of 5 mm). Further, the sealing member 28 of the inlet 27 for injecting liquid crystal has a structure that also serves as the protective member 24 of the optical sensor 11. In the cross-sectional view of FIG. 8, the second interlayer insulating film 20 is omitted for convenience of explanation, but in practice, the optical interlayer is interposed between the optical sensor 11 and the protective member 24 (sealing member 28). A second interlayer insulating film 20 having an opening 22 exists above the sensor 11.

As described above, since the sealing member 28 of the injection port 27 and the protective member 24 of the optical sensor 11 are made of the same material, it is possible to work in the same process as compared with the case of using different materials. Become. Further, the protective member arranging step of the optical sensor 11 and the sealing member arranging step of the injection port 27 are performed in one step, and the sealing member 28 and the protective member 24 are integrally formed, thereby increasing the number of steps. Prevent Togashi.

[0081] [Embodiment 4]

FIG. 9 is a schematic plan view of the display device 40 according to the fourth embodiment and a cross-sectional view taken along the line B1-B2. The configuration not described is the same as that of the display device of the second embodiment.

[0082] Here, in the display device 40, the FPC 10 is mounted in the peripheral region, and the connection of the FPC 10 is reinforced around the mounting portion of the FPC 10 (reliability of the mounting portion by mechanical reinforcement or moisture proof / dustproof). Reinforcing member 39 (reinforcing resin) is provided.

The optical sensor 11 is disposed in the vicinity of the mounting portion of the FPC 10, and has a structure in which the protective member 24 of the reinforcing member 39 force optical sensor 11 is integrally formed. In the cross-sectional view of FIG. 9, the second interlayer insulating film 20 is also omitted for convenience of explanation, but in practice, the optical interlayer between the optical sensor 11 and the protective member 24 (reinforcing member 39) A second interlayer insulating film 20 having an opening 22 exists above the sensor 11.

As described above, since the reinforcing member 39 of the FPC 10 and the protective member 24 of the optical sensor 11 are made of the same material, it is possible to work in the same process as compared with the case of using different materials. Further, by performing the protective member arranging step of the optical sensor 11 and the reinforcing member arranging step of the FPC 10 in one step, an increase in man-hours can be prevented.

[0085] Of course? Even if 1 ^^ (Ding & 6 Carrier Package) or LSI is mounted in the peripheral area 9 instead of the same ten, the reinforcing member 39 that reinforces these circuit members and the protective member of the optical sensor 11 By forming 24 integrally, the same effect can be obtained.

[0086] [Embodiment 5]

FIG. 10 is an overall configuration diagram of the display device 29 according to the fifth embodiment. FIG. 11 is a schematic cross-sectional view of a portion of the peripheral region 9 where the optical sensor 11 is disposed. In the fifth embodiment, the counter substrate 3 is large enough to cover the photosensor 11 in the peripheral region 9, and the protective member 24 of the photosensor 11 is formed between the active matrix substrate 2 and the counter substrate 3. It has a structure that exists in the gap. In FIG. 11, the second interlayer insulating film 20 is omitted for convenience of explanation, but actually corresponds to the upper part of the optical sensor 11 between the optical sensor 11 and the protective member 24. The second interlayer insulating film 20 having the opening 22 at the position is Exists. Note that the same components as those in the first to fourth embodiments are denoted by the same reference numerals and description thereof is omitted.

[0087] Normally, when a low hardness resin material is used for the protective member 24, the mechanical strength of the protective member may be a problem, such as the occurrence of surface flaws. By being covered, the protection member 24 can be mechanically (physically) protected.

[0088] At this time, it is desirable that a polarizing plate and a color filter are not formed in a portion covering the peripheral region 9 of the counter substrate 3 so as not to prevent the outside light from entering the optical sensor 11. In addition, as shown in FIG. 10, it is necessary to consider that the knock light system 12 does not extend directly below the optical sensor 11. Alternatively, if the knocklight system is located directly below the optical sensor 11, a light shielding member (such as aluminum tape) may be provided on the back surface of the active matrix substrate 2 where the optical sensor 11 is disposed.

Further, as shown in FIG. 12, when the gap between the optical sensor 11 and the counter substrate 3 is completely filled with the protective member 24, the protective member 24 of the optical sensor 11 is exposed to the outside air except for the side surface. A structure without touching can be realized, and the influence of moisture from the outside air can be further reduced. In addition, the refractive index is small between the optical sensor 11 and the counter substrate 3, and no air layer is interposed! Therefore, the light reflection loss at the interface between the air layer and the protective member 24 is reduced, and the SZ N of the optical sensor 11 can be improved. In FIG. 12 as well, the second interlayer insulating film 20 is shown with the force omitted for convenience of description. In fact, a position corresponding to the upper side of the optical sensor 11 is between the optical sensor 11 and the protective member 24. There is a second interlayer insulating film 20 having an opening 22 in the same.

In the first to fifth embodiments described above, an example in which the TFT 6 and the optical sensor 11 are formed using a polycrystalline Si film is shown, but both can be formed using an amorphous Si film. Further, not only a TFT with a top gate structure (forward stagger structure) but also a TFT with a bottom gate structure (reverse stagger structure) may be used. It is also possible to use other active elements such as MIM (Meta Insulator- Metal) instead of TFT6.

[0091] Further, as the optical sensor, a photodiode having a Schottky junction or an MIS type junction using only a PIN junction can be used. For example, a bottom-gate (inverted staggered) TFT using an amorphous Si film is the same as a photodiode with an MIS junction. For an example of monolithic formation on a substrate, refer to JP-A-6-188400. Further, as the structure of the optical sensor 11, other element structures such as an optical conductor or an optical transistor in which two terminals are formed in the lateral direction (plane direction) can be used.

Further, in the above description, the force sensor in which the optical sensor 11 is monolithically formed on the active matrix substrate by substantially the same process as the TFT 6 is a glass of the active matrix substrate. A configuration in which COG is mounted on the substrate may be used.

Note that the present invention can be widely applied to flat panel display devices including active elements, and can be applied to various display devices such as EL display devices and electrophoretic display devices in addition to liquid crystal display devices. can do.

[0094] In the first to fifth embodiments, instead of the force sensor described for the display device in which the optical sensor is formed in the peripheral region 9 as a representative of the environmental sensor, a temperature sensor, a humidity sensor, and a backlight system are used. Even when various sensors such as color sensors and brightness sensors are formed, by adopting the configuration of the present application, it is possible to reduce deterioration of sensor characteristics due to deterioration of the surface protective film above the sensor. .

[0095] [Embodiment 6]

FIG. 13 shows a schematic configuration of an electronic device according to an embodiment of the present invention. As shown in FIG. 13, the electronic device 60 according to the present embodiment corresponds to the brightness information of the external light detected by the display device 1 according to the first embodiment and the optical sensor 11 of the display device 1. And a control circuit 61 for controlling the display luminance of the display device 1. In FIG. 13, the functional blocks in the display device 1 and the electronic device 60 are simply illustrated. The control circuit 61 may have a function of controlling an arbitrary operation of the electronic device 60 in addition to the control of display luminance. Further, the electronic device 60 may have an arbitrary functional block other than that shown in FIG. 13 depending on its use.

The control circuit 61 controls the display brightness of the display device 1 by adjusting the brightness of the backlight system 12 according to the brightness information (sensor output) of the external light detected by the light sensor 11. Since display device 1 is a liquid crystal display device, the display luminance can be adjusted by controlling the luminance of the backlight. However, when a self-luminous element such as an EL element is used as the display device, the control circuit 61 is configured to control the light emission brightness of the self-luminous element Is done.

[0097] In the present embodiment, the power using the display device 1 according to the first embodiment is exemplified. The electronic devices using the display devices according to the second to fifth embodiments and the modifications thereof are also provided. It is within the scope of the present invention.

[0098] As described above, it is possible to provide an electronic device that reduces power consumption and realizes an easy-to-view display by controlling the display brightness so as to have a necessary and sufficient brightness according to the ambient brightness. . The electronic device of the present embodiment can achieve both good visibility and low power consumption in response to changes in the brightness of the usage environment, so it is often used as a mopile device that needs to be taken outside and needs battery drive. It is particularly useful. As specific examples of such mopile equipment, the application of the present invention is not limited to these. For example, information terminals such as mobile phones, PDAs, mopile game equipment, portable music players, digital cameras, video There are cameras.

[0099] In the present embodiment, the configuration in which the control circuit 61 for controlling the display luminance of the display device is provided outside the display device is illustrated, but the control circuit is provided as a part of the display device. It is good also as the structure comprised.

Industrial applicability

[0100] The present invention can be widely applied to flat panel display devices including active elements, and can be applied to various display devices such as EL display devices and electrophoretic display devices in addition to liquid crystal display devices. Can do. As a result, electronic devices that use display devices (such as, but not limited to, mobile phones, PDAs, DVD players, mopile game devices, notebook PCs, PC monitors, television receivers, etc.) Is available.

Claims

The scope of the claims

[1] An active matrix substrate having a pixel array region in which a plurality of pixels are arrayed, wherein the pixel array region includes a plurality of electrode wirings, a plurality of active elements, the plurality of electrode wirings, and a plurality of active An interlayer insulating film provided on the upper layer of the element and a plurality of pixel electrodes formed on the interlayer insulating film are disposed,

An environmental sensor disposed in a peripheral region existing around the pixel array region in the active matrix substrate;

A surface protective film provided in a layer above the arrangement layer of the environmental sensor in the peripheral region,

The active matrix substrate, wherein the surface protective film includes an opening in a portion corresponding to the position above the environmental sensor arrangement position.

2. The active matrix substrate according to claim 1, wherein the interlayer insulating film and the surface protective film are formed of the same material.

[3] The active matrix substrate according to [1] or [2], wherein the surface protective film also has a photosensitive material strength.

[4] The protective member covering at least a part of the opening of the surface protective film is provided.

The active matrix substrate as described in any one of -3.

[5] The active matrix substrate according to [4], wherein the protective member is formed of a material that is more resistant to ultraviolet rays than the surface protective film.

[6] A metal electrode connected to the environmental sensor is disposed in the opening of the surface protective film,

5. The active matrix substrate according to claim 4, wherein the protective member is formed of the same material as the pixel electrode on the metal electrode.

[7] The active element and the environmental sensor are formed by the same process, and the interlayer insulating film and the surface protective film are formed by the same process. An active matrix substrate as described in 1.

[8] The active element is a thin film transistor, and the environmental sensor has a lateral structure. The active matrix substrate according to claim 7, wherein the active matrix substrate is a photodiode.

9. The active matrix substrate according to claim 1, a counter substrate disposed so as to face a surface of the active matrix substrate on which the active elements are formed, and the active matrix substrate. And a display medium disposed in a gap between the counter substrates.

The active matrix substrate according to claim 4, a counter substrate disposed so as to face a surface of the active matrix substrate on which the active element is formed, and a gap between the active matrix substrate and the counter substrate The counter substrate is arranged so as to cover the whole area of the pixel array area and to expose at least the area where the environmental sensor is formed in the peripheral area. A display device that is installed and V-shaped.

11. The display device according to claim 10, wherein a height of the protection member in a normal direction of the active element formation surface is equal to or less than a total thickness of the counter substrate and the display medium.

The active matrix substrate according to claim 4, a counter substrate disposed so as to face a surface of the active matrix substrate on which the active element is formed, and a gap between the active matrix substrate and the counter substrate The counter substrate is disposed so as to cover the entire region of the pixel array region and to cover at least the environmental sensor in the peripheral region. A display device characterized by being installed.

13. The display device according to claim 12, wherein the protection member is disposed in a gap between the active matrix substrate and the counter substrate.

An inlet for injecting the display medium and a sealing member for sealing the inlet are provided,

The display device according to claim 9, wherein the protective member and the sealing member are formed of the same material. 15. The display device according to claim 14, wherein the injection port is located in the vicinity of the photosensor, and the sealing member and the protection member are integrally formed.

[16] A circuit member mounted in a peripheral region of the active matrix substrate, and a reinforcing member that reinforces the connection between the active matrix substrate and the circuit member, and the reinforcing member and the protective member are made of the same material The display device according to claim 9, formed by:

17. The display device according to claim 16, wherein the reinforcing member and the protective member are integrally formed.

18. The environment sensor is an optical sensor, and includes a control circuit that automatically controls display luminance based on brightness information of outside light detected by the optical sensor. The display device according to any one of the above.

[19] An electronic apparatus comprising the display device according to any one of claims 9 to 18.