WO2006096418A3 - Plating of a thin metal seed layer - Google Patents

Plating of a thin metal seed layer Download PDF

Info

Publication number
WO2006096418A3
WO2006096418A3 PCT/US2006/007303 US2006007303W WO2006096418A3 WO 2006096418 A3 WO2006096418 A3 WO 2006096418A3 US 2006007303 W US2006007303 W US 2006007303W WO 2006096418 A3 WO2006096418 A3 WO 2006096418A3
Authority
WO
WIPO (PCT)
Prior art keywords
plating
volume
substrate
thin metal
catholyte
Prior art date
Application number
PCT/US2006/007303
Other languages
French (fr)
Other versions
WO2006096418A2 (en
Inventor
Nicolay Kovarsky
You Wang
John O Dukovic
Ivan Rodriguez
Original Assignee
Applied Materials Inc
Nicolay Kovarsky
You Wang
John O Dukovic
Ivan Rodriguez
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc, Nicolay Kovarsky, You Wang, John O Dukovic, Ivan Rodriguez filed Critical Applied Materials Inc
Publication of WO2006096418A2 publication Critical patent/WO2006096418A2/en
Publication of WO2006096418A3 publication Critical patent/WO2006096418A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/007—Current directing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

An apparatus and method for plating a metal layer onto a substrate is provided. A catholyte volume is positioned to receive a substrate for plating. An anolyte volume having one or more anode segments positioned therein is ionically separated from the catholyte volume. An auxiliary volume having an auxiliary electrode positioned therein is provided to be electrically isolated from the anolyte fluid volume and in ionic communication with the catholyte volume. A method of plating includes a first stage of plating a thin metal seed uniformly in the center and near the edges of the substrate by providing a current pulse from two power supplies which are in reverse electrical polarity with one anode segment and the auxiliary electrode. Thereafter, gap filling of features and bulk metal plating are performed by applying a second current pulse to all anode segments.
PCT/US2006/007303 2005-03-03 2006-03-01 Plating of a thin metal seed layer WO2006096418A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/072,473 US20050145499A1 (en) 2000-06-05 2005-03-03 Plating of a thin metal seed layer
US11/072,473 2005-03-03

Publications (2)

Publication Number Publication Date
WO2006096418A2 WO2006096418A2 (en) 2006-09-14
WO2006096418A3 true WO2006096418A3 (en) 2007-10-25

Family

ID=36953838

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2006/007303 WO2006096418A2 (en) 2005-03-03 2006-03-01 Plating of a thin metal seed layer

Country Status (3)

Country Link
US (1) US20050145499A1 (en)
TW (1) TW200643226A (en)
WO (1) WO2006096418A2 (en)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8308931B2 (en) * 2006-08-16 2012-11-13 Novellus Systems, Inc. Method and apparatus for electroplating
US8475636B2 (en) 2008-11-07 2013-07-02 Novellus Systems, Inc. Method and apparatus for electroplating
US7371306B2 (en) * 2003-06-06 2008-05-13 Semitool, Inc. Integrated tool with interchangeable wet processing components for processing microfeature workpieces
US7390383B2 (en) * 2003-07-01 2008-06-24 Semitool, Inc. Paddles and enclosures for enhancing mass transfer during processing of microfeature workpieces
US7393439B2 (en) * 2003-06-06 2008-07-01 Semitool, Inc. Integrated microfeature workpiece processing tools with registration systems for paddle reactors
US20050050767A1 (en) * 2003-06-06 2005-03-10 Hanson Kyle M. Wet chemical processing chambers for processing microfeature workpieces
US20070144912A1 (en) * 2003-07-01 2007-06-28 Woodruff Daniel J Linearly translating agitators for processing microfeature workpieces, and associated methods
WO2005045311A2 (en) * 2003-11-03 2005-05-19 Monolithic Power Systems, Inc. Driver for light source having integrated photosensitive elements for driver control
US8623193B1 (en) 2004-06-16 2014-01-07 Novellus Systems, Inc. Method of electroplating using a high resistance ionic current source
US7179736B2 (en) * 2004-10-14 2007-02-20 Lsi Logic Corporation Method for fabricating planar semiconductor wafers
US7837851B2 (en) * 2005-05-25 2010-11-23 Applied Materials, Inc. In-situ profile measurement in an electroplating process
EP1969372A4 (en) * 2005-12-23 2009-04-22 Perkinelmer Las Inc Methods and compositions for detecting enzymatic activity
US7579274B2 (en) * 2006-02-21 2009-08-25 Alchimer Method and compositions for direct copper plating and filing to form interconnects in the fabrication of semiconductor devices
US7276796B1 (en) * 2006-03-15 2007-10-02 International Business Machines Corporation Formation of oxidation-resistant seed layer for interconnect applications
US9822461B2 (en) 2006-08-16 2017-11-21 Novellus Systems, Inc. Dynamic current distribution control apparatus and method for wafer electroplating
JP2008098449A (en) * 2006-10-12 2008-04-24 Ebara Corp Substrate processing apparatus and substrate processing method
TWI439568B (en) * 2006-11-20 2014-06-01 Univ California Gated electrodes for electrolysis and electrosynthesis
US7842173B2 (en) * 2007-01-29 2010-11-30 Semitool, Inc. Apparatus and methods for electrochemical processing of microfeature wafers
US20080178460A1 (en) * 2007-01-29 2008-07-31 Woodruff Daniel J Protected magnets and magnet shielding for processing microfeature workpieces, and associated systems and methods
US8784636B2 (en) * 2007-12-04 2014-07-22 Ebara Corporation Plating apparatus and plating method
US8858774B2 (en) 2008-11-07 2014-10-14 Novellus Systems, Inc. Electroplating apparatus for tailored uniformity profile
US8262871B1 (en) 2008-12-19 2012-09-11 Novellus Systems, Inc. Plating method and apparatus with multiple internally irrigated chambers
DE102009023769A1 (en) * 2009-05-22 2010-11-25 Hübel, Egon, Dipl.-Ing. (FH) Method and device for the controlled electrolytic treatment of thin layers
US8273233B2 (en) * 2009-07-17 2012-09-25 Headway Technologies, Inc. Method to reduce void formation during trapezoidal write pole plating in perpendicular recording
US10233556B2 (en) 2010-07-02 2019-03-19 Lam Research Corporation Dynamic modulation of cross flow manifold during electroplating
US8795480B2 (en) 2010-07-02 2014-08-05 Novellus Systems, Inc. Control of electrolyte hydrodynamics for efficient mass transfer during electroplating
US10094034B2 (en) 2015-08-28 2018-10-09 Lam Research Corporation Edge flow element for electroplating apparatus
US9523155B2 (en) 2012-12-12 2016-12-20 Novellus Systems, Inc. Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
US9624592B2 (en) 2010-07-02 2017-04-18 Novellus Systems, Inc. Cross flow manifold for electroplating apparatus
US9048296B2 (en) * 2011-02-11 2015-06-02 International Business Machines Corporation Method to fabricate copper wiring structures and structures formed thereby
DE102012206800B3 (en) * 2012-04-25 2013-09-05 Atotech Deutschland Gmbh Method and apparatus for the electrolytic deposition of a deposition metal on a workpiece
US9598788B2 (en) * 2012-09-27 2017-03-21 Applied Materials, Inc. Electroplating apparatus with contact ring deplating
US9909228B2 (en) 2012-11-27 2018-03-06 Lam Research Corporation Method and apparatus for dynamic current distribution control during electroplating
US9670588B2 (en) 2013-05-01 2017-06-06 Lam Research Corporation Anisotropic high resistance ionic current source (AHRICS)
US9449808B2 (en) 2013-05-29 2016-09-20 Novellus Systems, Inc. Apparatus for advanced packaging applications
US9752248B2 (en) 2014-12-19 2017-09-05 Lam Research Corporation Methods and apparatuses for dynamically tunable wafer-edge electroplating
US9567685B2 (en) 2015-01-22 2017-02-14 Lam Research Corporation Apparatus and method for dynamic control of plated uniformity with the use of remote electric current
TWI560323B (en) * 2015-02-13 2016-12-01 Inotera Memories Inc Electrochemical plating device and anode assembly thereof
US9816194B2 (en) 2015-03-19 2017-11-14 Lam Research Corporation Control of electrolyte flow dynamics for uniform electroplating
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
US9988733B2 (en) 2015-06-09 2018-06-05 Lam Research Corporation Apparatus and method for modulating azimuthal uniformity in electroplating
US10227707B2 (en) * 2015-07-17 2019-03-12 Applied Materials, Inc. Inert anode electroplating processor and replenisher
US9765443B2 (en) * 2015-09-02 2017-09-19 Applied Materials, Inc. Electroplating processor with current thief electrode
US10364505B2 (en) 2016-05-24 2019-07-30 Lam Research Corporation Dynamic modulation of cross flow manifold during elecroplating
US9960078B1 (en) * 2017-03-23 2018-05-01 International Business Machines Corporation Reflow interconnect using Ru
CN108735797B (en) * 2017-04-25 2022-05-13 中芯国际集成电路制造(上海)有限公司 Semiconductor structure and forming method thereof
US11001934B2 (en) 2017-08-21 2021-05-11 Lam Research Corporation Methods and apparatus for flow isolation and focusing during electroplating
US10781527B2 (en) 2017-09-18 2020-09-22 Lam Research Corporation Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating
KR20240007943A (en) * 2018-12-28 2024-01-17 에이씨엠 리서치 (상하이), 인코포레이티드 Plating apparatus and plating method
CN111834288A (en) * 2019-04-16 2020-10-27 中芯国际集成电路制造(上海)有限公司 Interconnection line and forming method thereof
JP7173932B2 (en) * 2019-06-10 2022-11-16 株式会社荏原製作所 Anode holder and plating equipment
US11203816B1 (en) * 2020-10-23 2021-12-21 Applied Materials, Inc. Electroplating seed layer buildup and repair
CN114420671A (en) * 2020-10-28 2022-04-29 上海华力集成电路制造有限公司 Copper filled groove structure and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445980A (en) * 1983-08-25 1984-05-01 Bell Telephone Laboratories, Incorporated Copper electroplating procedure
US20040115932A1 (en) * 2002-12-11 2004-06-17 International Business Machines Corporation Method and apparatus for controlling local current to achieve uniform plating thickness
US6811675B2 (en) * 1998-03-20 2004-11-02 Semitool, Inc. Apparatus and method for electrolytically depositing copper on a semiconductor workpiece

Family Cites Families (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3054734A (en) * 1960-09-09 1962-09-18 Westinghouse Electric Corp Addition agent for acid copper electrolytes
US4296672A (en) * 1979-11-13 1981-10-27 Proteus Corporation Reciprocating piston-cylinder combination and valving control therefor
US4469564A (en) * 1982-08-11 1984-09-04 At&T Bell Laboratories Copper electroplating process
US4840820A (en) * 1983-08-22 1989-06-20 Enthone, Incorporated Electroless nickel plating of aluminum
US4632851A (en) * 1985-04-22 1986-12-30 Amchem Products, Inc. Continuous autodeposition method with bath stabilization
US4828654A (en) * 1988-03-23 1989-05-09 Protocad, Inc. Variable size segmented anode array for electroplating
US5224504A (en) * 1988-05-25 1993-07-06 Semitool, Inc. Single wafer processor
US4933051A (en) * 1989-07-24 1990-06-12 Omi International Corporation Cyanide-free copper plating process
EP0422760A1 (en) * 1989-10-12 1991-04-17 Mitsubishi Rayon Co., Ltd Amorphous alloy and process for preparation thereof
GB2238530A (en) * 1989-10-31 1991-06-05 Grace W R & Co Antifoaming and defoaming compositions
US5287237A (en) * 1990-03-16 1994-02-15 Hitachi, Ltd. Antiferromagnetic film superior in corrosion resistance, magnetoresistance-effect element and magnetoresistance-effect head including such thin film
US5222310A (en) * 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
US5162079A (en) * 1991-01-28 1992-11-10 Eco-Tec Limited Process and apparatus for control of electroplating bath composition
US5156730A (en) * 1991-06-25 1992-10-20 International Business Machines Electrode array and use thereof
US5252196A (en) * 1991-12-05 1993-10-12 Shipley Company Inc. Copper electroplating solutions and processes
US5486264A (en) * 1992-03-25 1996-01-23 The Trustees Of Columbia University Laser etching of semiconductors
US5482680A (en) * 1992-10-09 1996-01-09 Ballard Power Systems, Inc. Electrochemical fuel cell assembly with integral selective oxidizer
US5489341A (en) * 1993-08-23 1996-02-06 Semitool, Inc. Semiconductor processing with non-jetting fluid stream discharge array
CH691209A5 (en) * 1993-09-06 2001-05-15 Scherrer Inst Paul Manufacturing process for a polymer electrolyte and electrochemical cell with this polymer electrolyte.
US5544421A (en) * 1994-04-28 1996-08-13 Semitool, Inc. Semiconductor wafer processing system
US6447232B1 (en) * 1994-04-28 2002-09-10 Semitool, Inc. Semiconductor wafer processing apparatus having improved wafer input/output handling system
US5643456A (en) * 1995-05-30 1997-07-01 The Regents Of The University Of California Process for the displacement of cyanide ions from metal-cyanide complexes
US5516418A (en) * 1995-06-26 1996-05-14 International Business Machines Corporation Patterned electroplating
US5597460A (en) * 1995-11-13 1997-01-28 Reynolds Tech Fabricators, Inc. Plating cell having laminar flow sparger
US5620581A (en) * 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
FR2745589B1 (en) * 1996-02-29 1998-04-30 Snecma HIGH STRENGTH-TO-MASS HYBRID PART AND METHOD FOR PRODUCING THE SAME
US6921467B2 (en) * 1996-07-15 2005-07-26 Semitool, Inc. Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces
US6099712A (en) * 1997-09-30 2000-08-08 Semitool, Inc. Semiconductor plating bowl and method using anode shield
US5883762A (en) * 1997-03-13 1999-03-16 Calhoun; Robert B. Electroplating apparatus and process for reducing oxidation of oxidizable plating anions and cations
US6090260A (en) * 1997-03-31 2000-07-18 Tdk Corporation Electroplating method
US6228231B1 (en) * 1997-05-29 2001-05-08 International Business Machines Corporation Electroplating workpiece fixture having liquid gap spacer
US6004440A (en) * 1997-09-18 1999-12-21 Semitool, Inc. Cathode current control system for a wafer electroplating apparatus
US6936153B1 (en) * 1997-09-30 2005-08-30 Semitool, Inc. Semiconductor plating system workpiece support having workpiece-engaging electrode with pre-conditioned contact face
US6126798A (en) * 1997-11-13 2000-10-03 Novellus Systems, Inc. Electroplating anode including membrane partition system and method of preventing passivation of same
US6156167A (en) * 1997-11-13 2000-12-05 Novellus Systems, Inc. Clamshell apparatus for electrochemically treating semiconductor wafers
US6179983B1 (en) * 1997-11-13 2001-01-30 Novellus Systems, Inc. Method and apparatus for treating surface including virtual anode
WO1999040615A1 (en) * 1998-02-04 1999-08-12 Semitool, Inc. Method and apparatus for low-temperature annealing of metallization micro-structures in the production of a microelectronic device
US6391166B1 (en) * 1998-02-12 2002-05-21 Acm Research, Inc. Plating apparatus and method
US6423642B1 (en) * 1998-03-13 2002-07-23 Semitool, Inc. Reactor for processing a semiconductor wafer
US6197181B1 (en) * 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6365033B1 (en) * 1999-05-03 2002-04-02 Semitoof, Inc. Methods for controlling and/or measuring additive concentration in an electroplating bath
US6099702A (en) * 1998-06-10 2000-08-08 Novellus Systems, Inc. Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability
WO2000005747A2 (en) * 1998-06-30 2000-02-03 Semitool, Inc. Metallization structures for microelectronic applications and process for forming the structures
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
US6228232B1 (en) * 1998-07-09 2001-05-08 Semitool, Inc. Reactor vessel having improved cup anode and conductor assembly
US6080291A (en) * 1998-07-10 2000-06-27 Semitool, Inc. Apparatus for electrochemically processing a workpiece including an electrical contact assembly having a seal member
US6322678B1 (en) * 1998-07-11 2001-11-27 Semitool, Inc. Electroplating reactor including back-side electrical contact apparatus
US6248222B1 (en) * 1998-09-08 2001-06-19 Acm Research, Inc. Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
US6383352B1 (en) * 1998-11-13 2002-05-07 Mykrolis Corporation Spiral anode for metal plating baths
US6267853B1 (en) * 1999-07-09 2001-07-31 Applied Materials, Inc. Electro-chemical deposition system
US6251236B1 (en) * 1998-11-30 2001-06-26 Applied Materials, Inc. Cathode contact ring for electrochemical deposition
KR100385042B1 (en) * 1998-12-03 2003-06-18 인터내셔널 비지네스 머신즈 코포레이션 Method for forming electromigration-resistant structures by doping
TW483950B (en) * 1998-12-31 2002-04-21 Semitool Inc Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece
US6136163A (en) * 1999-03-05 2000-10-24 Applied Materials, Inc. Apparatus for electro-chemical deposition with thermal anneal chamber
US6347837B1 (en) * 1999-03-11 2002-02-19 Becktek Limited Slide assembly having retractable gas-generator apparatus
US6585876B2 (en) * 1999-04-08 2003-07-01 Applied Materials Inc. Flow diffuser to be used in electro-chemical plating system and method
US6368475B1 (en) * 2000-03-21 2002-04-09 Semitool, Inc. Apparatus for electrochemically processing a microelectronic workpiece
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
US6193860B1 (en) * 1999-04-23 2001-02-27 Vlsi Technolgy, Inc. Method and apparatus for improved copper plating uniformity on a semiconductor wafer using optimized electrical currents
US6270635B1 (en) * 1999-04-27 2001-08-07 Advanced Micro Devices, Inc. Consistent plating system for electroplating
US6254742B1 (en) * 1999-07-12 2001-07-03 Semitool, Inc. Diffuser with spiral opening pattern for an electroplating reactor vessel
US6395101B1 (en) * 1999-10-08 2002-05-28 Semitool, Inc. Single semiconductor wafer processor
US6527920B1 (en) * 2000-05-10 2003-03-04 Novellus Systems, Inc. Copper electroplating apparatus
WO2001096632A2 (en) * 2000-06-15 2001-12-20 Applied Materials, Inc. A method and apparatus for conditioning electrochemical baths in plating technology
JP3642730B2 (en) * 2000-11-29 2005-04-27 株式会社荏原製作所 Plating apparatus and plating solution composition management method
US6432821B1 (en) * 2000-12-18 2002-08-13 Intel Corporation Method of copper electroplating
US6899804B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US6740221B2 (en) * 2001-03-15 2004-05-25 Applied Materials Inc. Method of forming copper interconnects
US6551487B1 (en) * 2001-05-31 2003-04-22 Novellus Systems, Inc. Methods and apparatus for controlled-angle wafer immersion
US6592736B2 (en) * 2001-07-09 2003-07-15 Semitool, Inc. Methods and apparatus for controlling an amount of a chemical constituent of an electrochemical bath
US6908540B2 (en) * 2001-07-13 2005-06-21 Applied Materials, Inc. Method and apparatus for encapsulation of an edge of a substrate during an electro-chemical deposition process
US6518184B1 (en) * 2002-01-18 2003-02-11 Intel Corporation Enhancement of an interconnect
US20030159937A1 (en) * 2002-02-27 2003-08-28 Applied Materials, Inc. Method to reduce the depletion of organics in electroplating baths
US7247223B2 (en) * 2002-05-29 2007-07-24 Semitool, Inc. Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces
US20040000488A1 (en) * 2002-06-28 2004-01-01 Applied Materials, Inc. CU ECP planarization by insertion of polymer treatment step between gap fill and bulk fill steps
US20040217005A1 (en) * 2002-07-24 2004-11-04 Aron Rosenfeld Method for electroplating bath chemistry control
US7223323B2 (en) * 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
US20040134775A1 (en) * 2002-07-24 2004-07-15 Applied Materials, Inc. Electrochemical processing cell
US7247222B2 (en) * 2002-07-24 2007-07-24 Applied Materials, Inc. Electrochemical processing cell
US7128823B2 (en) * 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
US20040118694A1 (en) * 2002-12-19 2004-06-24 Applied Materials, Inc. Multi-chemistry electrochemical processing system
US7067045B2 (en) * 2002-10-18 2006-06-27 Applied Materials, Inc. Method and apparatus for sealing electrical contacts during an electrochemical deposition process
US7025862B2 (en) * 2002-10-22 2006-04-11 Applied Materials Plating uniformity control by contact ring shaping
US7087144B2 (en) * 2003-01-31 2006-08-08 Applied Materials, Inc. Contact ring with embedded flexible contacts
WO2004075266A2 (en) * 2003-02-18 2004-09-02 Applied Materials, Inc. Method for immersing a substrate
US20040200725A1 (en) * 2003-04-09 2004-10-14 Applied Materials Inc. Application of antifoaming agent to reduce defects in a semiconductor electrochemical plating process
US20040206628A1 (en) * 2003-04-18 2004-10-21 Applied Materials, Inc. Electrical bias during wafer exit from electrolyte bath

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445980A (en) * 1983-08-25 1984-05-01 Bell Telephone Laboratories, Incorporated Copper electroplating procedure
US6811675B2 (en) * 1998-03-20 2004-11-02 Semitool, Inc. Apparatus and method for electrolytically depositing copper on a semiconductor workpiece
US20040115932A1 (en) * 2002-12-11 2004-06-17 International Business Machines Corporation Method and apparatus for controlling local current to achieve uniform plating thickness

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