WO2006094821A3 - Method for producing a thin magnesium oxide layer - Google Patents

Method for producing a thin magnesium oxide layer Download PDF

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Publication number
WO2006094821A3
WO2006094821A3 PCT/EP2006/002228 EP2006002228W WO2006094821A3 WO 2006094821 A3 WO2006094821 A3 WO 2006094821A3 EP 2006002228 W EP2006002228 W EP 2006002228W WO 2006094821 A3 WO2006094821 A3 WO 2006094821A3
Authority
WO
WIPO (PCT)
Prior art keywords
magnesium oxide
layer
producing
oxide layer
produced
Prior art date
Application number
PCT/EP2006/002228
Other languages
German (de)
French (fr)
Other versions
WO2006094821A2 (en
Inventor
Wolfram Maass
Berthold Ocker
Juergen Langer
Original Assignee
Singulus Technologies Ag
Wolfram Maass
Berthold Ocker
Juergen Langer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Singulus Technologies Ag, Wolfram Maass, Berthold Ocker, Juergen Langer filed Critical Singulus Technologies Ag
Publication of WO2006094821A2 publication Critical patent/WO2006094821A2/en
Publication of WO2006094821A3 publication Critical patent/WO2006094821A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C23C14/5853—Oxidation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/305—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
    • H01F41/307—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling insulating or semiconductive spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention relates to a method for producing thin magnesium oxide layers on a substrate. Initially, a layer made of metallic magnesium is applied to the substrate and then the magnesium layer is transformed into a magnesium oxide layer by means of oxidation, for example, by treating plasma containing oxygen ions. The inventive method enables, in particular, TMR-layer systems to be produced, wherein the insulating barrier or intermediate layer is produced according to said method. Said method enables very thin magnesium oxide layers having small thickness tolerances, to be produced.
PCT/EP2006/002228 2005-03-11 2006-03-10 Method for producing a thin magnesium oxide layer WO2006094821A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005011414.8 2005-03-11
DE200510011414 DE102005011414A1 (en) 2005-03-11 2005-03-11 Method for producing a thin magnesium oxide layer by means of plasma oxidation

Publications (2)

Publication Number Publication Date
WO2006094821A2 WO2006094821A2 (en) 2006-09-14
WO2006094821A3 true WO2006094821A3 (en) 2007-04-26

Family

ID=36778295

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/002228 WO2006094821A2 (en) 2005-03-11 2006-03-10 Method for producing a thin magnesium oxide layer

Country Status (2)

Country Link
DE (1) DE102005011414A1 (en)
WO (1) WO2006094821A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7479394B2 (en) * 2005-12-22 2009-01-20 Magic Technologies, Inc. MgO/NiFe MTJ for high performance MRAM application
DE102010060910A1 (en) * 2010-11-30 2012-05-31 Roth & Rau Ag Method and apparatus for ion implantation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10008482A1 (en) * 2000-02-24 2001-09-13 Ccr Gmbh Beschichtungstechnolo High frequency plasma source with support for field coil, gas distribution and plasma jet extraction, has additional high frequency matching network
DE10031002A1 (en) * 2000-06-30 2002-01-10 Ccr Gmbh Beschichtungstechnolo Production of thin oxide or nitride layers used as tunnel barrier material for magnetoresistive sensors comprises using a plasma beam to convert the substrate into the corresponding oxide or nitride and adjusting the reaction speed

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003283000A (en) * 2002-03-27 2003-10-03 Toshiba Corp Magnetoresistance effect element and magnetic storage device having the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10008482A1 (en) * 2000-02-24 2001-09-13 Ccr Gmbh Beschichtungstechnolo High frequency plasma source with support for field coil, gas distribution and plasma jet extraction, has additional high frequency matching network
DE10031002A1 (en) * 2000-06-30 2002-01-10 Ccr Gmbh Beschichtungstechnolo Production of thin oxide or nitride layers used as tunnel barrier material for magnetoresistive sensors comprises using a plasma beam to convert the substrate into the corresponding oxide or nitride and adjusting the reaction speed

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HEHN M ET AL: "Low-height sputter-deposited magnesium oxide tunnel barriers: experimental report and free electron modeling", EUROPEAN PHYSICAL JOURNAL B. CONDENSED MATTER, EDP SCIENCES; SPRINGER VERLAG, LES ULIS,, FR, vol. 40, no. 1, July 2004 (2004-07-01), pages 19 - 23, XP002365185, ISSN: 1434-6028 *
KROZER A ET AL: "Hydrogen sorption kinetics in partly oxidized Mg films", JOURNAL OF ALLOYS AND COMPOUNDS, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 237, 15 April 1996 (1996-04-15), pages 74 - 80, XP004077066, ISSN: 0925-8388 *

Also Published As

Publication number Publication date
DE102005011414A1 (en) 2006-09-14
WO2006094821A2 (en) 2006-09-14

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