WO2006069476A1 - Procede de suppression harmonique destine a un emetteur-recepteur bs et dispositif rf frontal - Google Patents

Procede de suppression harmonique destine a un emetteur-recepteur bs et dispositif rf frontal Download PDF

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Publication number
WO2006069476A1
WO2006069476A1 PCT/CN2004/001541 CN2004001541W WO2006069476A1 WO 2006069476 A1 WO2006069476 A1 WO 2006069476A1 CN 2004001541 W CN2004001541 W CN 2004001541W WO 2006069476 A1 WO2006069476 A1 WO 2006069476A1
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Prior art keywords
low noise
noise amplifier
state
gate voltage
gate
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English (en)
French (fr)
Inventor
Minde Yu
Jianli Liu
Jianhua Mao
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ZTE Corp
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ZTE Corp
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Priority to PCT/CN2004/001541 priority Critical patent/WO2006069476A1/zh
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver

Definitions

  • the present invention relates to a mobile communication system employing a time division duplex (TDD) mode of operation, and more particularly to a method for suppressing harmonics of a radio frequency front end device for a base transceiver station of the above communication system and a radio frequency front end device for implementing the same .
  • TDD time division duplex
  • the RF front-end equipment of high-performance transceivers has become an indispensable and important component.
  • the transmission capacity of the communication system is getting larger and larger, and the frequency interval of the channel is getting denser and denser.
  • the mobile station can normally receive the transmission signal of the base station while avoiding interference.
  • the normal operation of other communication systems requires that the transmit power of the RF front-end of the base transceiver station and the out-of-band spurious harmonics can meet the increasingly high requirements of modern communication systems.
  • the radio frequency front end device of the general TDD transceiver mainly includes a radio frequency switch 101, a power amplifier 102, a low noise amplifier 103, and a baseband circuit 104, as shown in FIG. 1, wherein the baseband circuit 104 controls the operation of other components.
  • the RF switch 101 When the TDD communication system is in the receiving state, the RF switch 101 is switched to the receiving state, and the low noise amplifier 103 is in the working state, so that the low noise amplifier 103 and the RF switch 101 form a receiving channel, and the RF signal received by the antenna is amplified. And output to the subsequent receiving circuit to process these signals.
  • the signal output from the receiving channel not only needs to meet the requirements of the communication system, but also has a lower noise figure for the entire receiving channel.
  • the low noise amplifier 103 of the receiving channel is usually constituted by a Pseudomorphic High Electron Moment Transistor (PHEMT) field effect transistor having a low noise figure.
  • PHEMT Pseudomorphic High Electron Moment Transistor
  • the power amplifier 102 When the TDD communication system is in the transmitting state, the power amplifier 102 operates, and the RF switch 101 switches to the transmitting state, so that the RF switch 101 and the power amplifier 102 form a transmitting channel, and the RF transmitting signal outputted by the transmitting circuit is amplified. Making the output RF signal reach the communication system The required output power is then radiated into the air via the antenna. In order to ensure the coverage of the communication system and avoid interference with the normal operation of other communication systems, there are certain requirements for the transmission power, transmission spurs and harmonics of the transmission channel.
  • the generation of harmonics in the RF front-end device of the base station signal is usually caused by the nonlinearity of the power amplifier 102 and the RF switch 101 therein, and at the same time, due to the limited isolation of the RF switch 101, the RF signal is transmitted.
  • the transmit time slot can be leaked through the RF switch 101 to the low noise amplifier 103 of the receive channel, which also produces harmonics.
  • any one of the following three methods is generally used in the prior art: First, a filter is added to the common end of the transmitting and receiving channels of the RF switch 101, thereby harmonics The suppression is performed; the second is to add a filter in front of the low noise amplifier 103 of the receiving channel to suppress the harmonics caused by the receiving channel; the third is to improve the isolation of the RF switch 101 and reduce the leakage to the receiving channel.
  • the noise amplifier 103 emits a level of the leakage signal, thereby reducing the harmonic signal caused by the low noise amplifier 103, but this method increases the insertion loss of the RF switch 101 as the isolation of the RF switch 101 is improved.
  • the above three methods all have an additional insertion loss in front of the low noise amplifier 103 of the receiving channel, which affects the noise figure of the system receiving channel, thereby affecting the uplink coverage of the system, and the system is correspondingly
  • the design of the filter or RF switch 101 is also limited, which increases the overall system cost and complicates the design of the entire system.
  • the invention is based on the problems existing in the prior art, and aims to provide a harmonic suppression method and a radio frequency front-end device for a radio frequency front-end device in a base transceiver station, so as to reduce leakage due to transmission signal
  • the harmonic signal generated in the low-noise amplifier of the channel and overcomes the problem that the noise figure of the receiving channel rises due to the introduction of additional loss in the prior art, thereby affecting the uplink receiving sensitivity of the system and limiting the selection of the RF switch.
  • a harmonic suppression method for a radio frequency front end device in a base transceiver station wherein a low noise amplifier in the transceiver is constructed using a PHEMT FET, the method comprising: transmitting and receiving according to a base station The operating state of the machine switches the gate negative gate voltage of the low noise amplifier to operate the low noise amplifier in different states.
  • the method specifically includes: when the base transceiver station is in a state of receiving a signal, controlling a gate negative gate voltage of the low noise amplifier to operate the gate negative gate voltage at a static operating point; when the base transceiver station When in the state of the transmitted signal, the gate negative gate voltage of the low noise amplifier is controlled, so that the low noise amplifier is in the deep cutoff state.
  • a radio frequency front end apparatus for a base transceiver station including:
  • An RF switch for converting a receiving channel and a transmitting channel
  • the power amplifier is used to discharge the RF signal output from the circuit, and is transmitted through the antenna.
  • the low noise amplifier is composed of a PHEMT FET, and is used for linear low noise amplification of the RF signal received by the antenna, and output to the receiving circuit. ; as well as
  • a gate voltage switching control circuit for controlling a gate negative gate voltage of the low noise amplifier; a baseband circuit for controlling the RF switch, the power amplifier, the low noise amplifier, and the gate voltage switching Control the working state of the circuit.
  • the invention increases the gate voltage switching control circuit in the TDD system transceiver, and switches the gate (also referred to as G pole) voltage of the low noise amplifier composed of the PHEMT FET to reduce the signal due to the transmission.
  • the harmonic signal generated by the low noise amplifier leaking into the receiving channel has a signal level reduced by about 15-20 dB.
  • the newly added switching control circuit is simple in implementation, which greatly reduces system cost and design complexity.
  • the present invention does not introduce additional loss on the transceiver channel, and thus does not affect the receiving sensitivity of the system.
  • the present invention is applicable to a base station system of a time division duplex system in which the gate of a low noise amplifier requires a negative gate voltage.
  • FIG. 1 is a schematic structural diagram of a transceiver radio frequency front end device in the prior art
  • 2 is a flow chart of a method for suppressing harmonics of a radio frequency front end device according to the present invention
  • FIG. 3 is a schematic structural view of a radio frequency front end device according to an embodiment of the present invention
  • FIG. 4 is another schematic view of the present invention.
  • FIG. 5 is a timing diagram of the operating state of the RF front end device and the gate bias voltage of the low noise amplifier in the embodiment shown in FIG. 4.
  • step 210 when the transceiver is in the state of receiving the signal, the gate negative gate voltage of the low noise amplifier is controlled to operate the low noise amplifier at the static working point while turning on the receiving channel; When the transceiver is in the state of transmitting signals, the transmitting channel is turned on, and the gate negative gate voltage of the low noise amplifier is controlled at the same time, so that the low noise amplifier is in the depth cut-off state.
  • the level of the harmonic signal generated by the leakage of the power of the transmission signal to the low noise amplifier can be effectively reduced.
  • FIG. 3 is a schematic structural diagram of a radio frequency front end device according to an embodiment of the present invention, which mainly includes the following components: a radio frequency switch 101, a power amplifier 102, a low noise amplifier 103 composed of a PHEMT field effect transistor, a baseband circuit 304, and a new one.
  • the gate voltage switching control circuit 305 among them:
  • the RF transceiver switch 101 is connected to the antenna, and is mainly used for realizing the conversion of the transceiver channel in the transceiver. According to the needs of the system, the time slot conversion of the «_ channel is completed, so that the TDD system completes the time division duplex of the transmission and reception switching.
  • the power amplifier 102 is configured to put the RF signal outputted by the transmitting circuit in the transceiver Large, making it meet the system's required output power, and through the RF switch when the signaling channel is turned on
  • the low noise amplifier 103 performs linear low noise amplification on the radio frequency signals received by the antenna and the radio frequency switch 101 when the receiving channel is turned on, so that the level and the signal to noise ratio of the radio frequency signals can reach the requirements of the system after being amplified. Then outputting to the receiving circuit for further processing; in the embodiment, the low noise amplifier 103 is a PHEMT FET;
  • the gate voltage switching control circuit 305 performs switching control on the gate negative gate voltage of the low noise amplifier 103, that is, when the system is in the receiving or transmitting state, the gate negative gate voltage is controlled differently, so that the low noise amplifier 103 is placed. Different working conditions;
  • the baseband control circuit 304 performs control of the RF switch 101, the power amplifier 102, the low noise amplifier 103, and the gate voltage switching control circuit 305, that is, these components are all based on the control signal output from the baseband control circuit 304. Operate.
  • the baseband circuit 304 When the system is in the receiving state, the baseband circuit 304 outputs a control signal of the radio frequency switch 101 according to the timing requirement of the system. Under the action of the control signal, the radio frequency switch 101 completes the state switching and is in the receiving working state.
  • the baseband circuit 304 controls the operating state of the gate voltage switching control circuit 305, and then under the control of the gate voltage switching control circuit 305, the gate negative bias of the low noise amplifier 103 operates to satisfy the static required for normal amplification of the low noise amplifier.
  • the baseband circuit 304 controls the low noise amplifier 103 to be in the receiving state, so that the receiving channel formed by the RF switch 101 and the low noise amplifier 103 is turned on, and the RF front end device is in the receiving channel state.
  • the RF signal received by the antenna is amplified by the RF switch 101, the low noise amplifier 103, and output to the receiving circuit of the subsequent transceiver.
  • the baseband circuit 304 When the system is in the transmitting state, the baseband circuit 304 outputs a control signal of the radio frequency switch 101 according to the timing requirement of the system. Under the action of the control signal, the radio frequency switch 101 completes the state switching and is in the transmitting working state.
  • the baseband control circuit 304 sends a control signal to cause the power amplifier 102 to be in a transmitting state, such that the transmitting channel formed by the RF switch 101 and the power amplifier 102 is turned on, and the RF front end device is in the transmitting channel state.
  • the baseband circuit 304 controls the operating state of the gate voltage switching control circuit 305 to cause the gate negative gate voltage of the low noise amplifier 103. The increase is such that the low noise amplifier 103 is in the depth cutoff state.
  • the RF signal output by the transmitting channel is transmitted through the RF switch 101 and the antenna.
  • the working principle and process of the gate voltage switching control circuit 305 are specifically described below:
  • the transmitting channel is turned on, and the RF signal to be transmitted is amplified by the power amplifier 102 and input to the RF switch 101.
  • Most of the RF signal is radiated into the air through the antenna, and a small portion of the signal leaks to the low noise amplifier 103 of the receiving channel due to the limited isolation of the RF switch 101, and generates harmonics under the nonlinear action of the low noise amplifier 103.
  • the signal is then radiated into the air via the RF switch 101 and the antenna.
  • the baseband circuit 304 controls the operating state of the gate voltage switching control circuit 305 to increase the gate negative gate voltage of the low noise amplifier 103, thereby making the PHEMT field effect transistor conductive.
  • the channel is completely turned off under the strong electric field formed by the high negative voltage of the gate, causing the FET to be non-conductive.
  • the PHEMT FET constituting the low noise amplifier 103 is always in the depth cut-off state, and in this case, the input of the FET
  • the operating states such as impedance and forward transfer admittance are substantially independent of the magnitude of the applied signal within a certain range, so the nonlinearity of the low noise amplifier 103 is improved, and the level of the harmonic signal due to the nonlinearity of the low noise amplifier 103 is also Reduced.
  • the value of the negative gate voltage applied to the PHEMT FET gate should be selected: After considering the influence of the RF leakage signal, the peak voltage of the PHEMT FET does not exceed The breakdown voltage of the gate.
  • the receiving channel When the RF front-end device is in the receiving state, the receiving channel is turned on, the baseband circuit 304 controls the operating state of the gate voltage switching control circuit 305, and the gate negative gate voltage of the low noise amplifier 103 is operated to satisfy the normal amplification of the low noise amplifier. The static working point required.
  • the present embodiment can reduce the harmonic signal due to the nonlinearity of the low noise amplifier, and is simple in design and easy to implement.
  • FIG. 4 is a schematic structural view of a radio frequency front end device according to another embodiment of the present invention, wherein the same portions as those of the embodiment shown in FIG. 3 are denoted by the same reference numerals, and the description thereof will be omitted.
  • the embodiment shown in FIG. 4 is a specific implementation of the embodiment shown in FIG. 3, and a low noise amplifier 103 is shown. The specific structure is indicated.
  • the RF switch 101 adopts a universal single-pole double-throw RF integrated switch 401, and the control pin is connected to the RF switch control signal outputted by the baseband circuit 304.
  • the other three ports are respectively connected to the output port of the antenna and the power amplifier 102.
  • the input port of the low noise amplifier 103 uses a common dual-supply PHEMT amplifier, including resistors R1, R2, R3, inductor L1, and PHEMT FET.
  • the gate voltage switching control circuit 305 is composed of a high speed digital multiplexer 405.
  • the baseband circuit 304 When the system is operating in the receiving state, the baseband circuit 304 outputs the control signal of the radio frequency switch 101, so that the radio frequency switch 101 completes the switching of the working state under the action of the control signal, and operates in the receiving state. At the same time, the baseband circuit 304 also controls the low noise amplifier 103 to be in the receiving operation state, and controls the XI-X path of the high speed digital multiplexer 405 to be turned on, so that the -5V voltage is applied to the resistor R2 through the resistors R1 and X1-X.
  • the inductor L1 is connected to the gate of the PHEMT FET, so that the gate negative gate voltage of the PHEMT FET is obtained by dividing the voltage of -5V through the voltage dividers R1 and R2. Therefore, reasonable selection of the values of the resistors R1, R2 can make the gate of the PHEMT FET obtain a suitable bias voltage, so that the low noise amplifier 103 composed of the PHEMT FET operates in an amplified state, thus, by the RF switch 101 and low.
  • the receiving channel formed by the noise amplifier 103 is in a normal working state, thereby realizing a low noise amplifying function for the antenna input RF signal.
  • the baseband circuit 304 When the system is operating in the transmitting state, the baseband circuit 304 outputs the control signals of the RF switch 101 and the power amplifier 102, respectively, so that the RF switch 101 and the power amplifier 102 complete the switching of the working state, and work in the transmitting state to implement the transceiver. The normal amplification function of the output signal.
  • the baseband circuit 304 controls the high speed digital multiplexer 405 to strobe the X0-X path, so that the -5V voltage is applied to the resistor R2 through the resistors R3 and X0-X, and then connected to the gate of the PHEMT FET through the inductor L1.
  • the gate negative gate voltage of the PHEMT FET is obtained by dividing the voltage of -5V through the voltage dividers of resistors R3 and R2. Therefore, the value of the selection resistor R3 is much smaller than the value of the resistor R2, so that the voltage drop across the resistor R3 is negligible, then the bias voltage obtained by the PHEMT FET gate will be close to the supply voltage -5V, so that the PHEMT FET
  • the constructed low noise amplifier 103 operates in a deep cut-off state, which improves the linear performance of the low noise amplifier, thereby reducing the harmonic signal level of the system.
  • the operation state of the embodiment shown in Fig. 4 and the timing of the gate bias voltage of the low noise amplifier 103 are as shown in Fig. 5.
  • the present embodiment can reduce the harmonics caused by leakage of the signaling signal to the low noise amplifier by controlling the gate bias voltage of the low noise amplifier without changing the control software of the original baseband. signal.

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Description

用于基站收发信机的谐波抑制方法及射频前端装置 技术领域
本发明涉及采用时分双工（TDD )工作方式的移动通信系统， 特别是涉 及用于上述通信系统的基站收发信机的射频前端装置的谐波抑制方法及实 现该谐波抑制方法的射频前端装置。 背景技术
在各种通讯体制的移动通信系统中， 高性能的收发信机的射频前端装 置已经是必不可少的重要部件。 随着现代移动通信技术的不断发展， 通信 系统的传输容量越来越大， 信道的频率间隔越来越密， 为了在通讯距离较 远时， 移动台能正常接收基站的发射信号， 同时避免干扰其它通信系统的 正常运行， 要求基站收发信机的射频前端的发射功率和带外杂散谐波等指 标能够适应现代通信系统越来越高的要求。
现有技术中， 一般的 TDD收发信机的射频前端装置主要包括射频开关 101、 功率放大器 102、 低噪声放大器 103、 基带电路 104， 如图 1所示， 其中基带电路 104控制其他元件的工作。
当 TDD通信系统处于收信状态时， 射频开关 101切换到收信状态， 低 噪声放大器 103处于工作状态， 这样低噪声放大器 103和射频开关 101构 成收信通道， 将天线收到的射频信号进行放大， 并输出到随后的收信电路 中对这些信号进行处理。 为了保证通信系统有足够的收信灵敏度， 收信通 道输出的信号不仅信号电平要满足通信系统的要求， 而且整个收信通道要 有较低的噪声系数。 为了得到较低的噪声系数， 收信通道的低噪声放大器 103 通常采用噪声系数较低的假性高电子迁移率晶体管 （Pseudomorphic High Electron Mobi l i ty Trans is tor, 简称 PHEMT )场效应管构成。
当 TDD通信系统处于发信状态时，功率放大器 102工作，射频开关 101 切换到发信状态， 这样射频开关 101和功率放大器 102构成发信通道， 对 发信电路输出的射频发信信号进行放大， 使得输出的射频信号达到通信系 统要求的输出功率， 然后经天线辐射到空中。 为了保证通信系统的覆盖范 围， 同时又避免干扰其它通信系统的正常工作，对于发信通道的发射功率、 发信杂散和谐波等指标都有一定的要求。
在 TDD通信系统中， 在基站 信机的射频前端装置中产生谐波通常 是由于其中的功率放大器 102和射频开关 101的非线性引起的， 同时由于 射频开关 101的隔离度有限，射频发信信号在发信时隙可通过射频开关 101 泄漏到收信通道的低噪声放大器 103, 这样也会产生谐波。
为了降低通信系统产生的谐波， 现有技术中一般采用下述三种方法中 的任一种： 一是在射频开关 101的发信和收信通道的公用端增加一个滤波 器， 从而对谐波进行抑制； 二是在收信通道的低噪声放大器 103的前面增 加滤波器， 对由于收信通道造成的谐波进行抑制； 三是改善射频开关 101 的隔离度， 降低泄漏到收信通道的低噪声放大器 103的发信泄漏信号的电 平， 从而降低低噪声放大器 103造成的谐波信号， 但这种方法会随着射频 开关 101隔离度的改善， 增加射频开关 101的插入损耗。
但是， 上述三种方法都会由于在收信通道的低噪声放大器 103的前面 引入了额外的插入损耗， 而影响系统收信通道的噪声系数， 从而对系统的 上行覆盖范围造成影响， 同时系统在相应的滤波器或射频开关 101的设计 选型上也会有较大的限制， 从而在增加整个系统成本的同时， 也使整个系 统的设计更加复杂。
因此， 如何能够既有效抑制收发信机的射频前端的谐波， 又不增加系 统的成本、 设计简单， 成为当前亟待解决的问题。 发明内容
本发明正是基于现有技术中存在的问题提出的， 其目的在于提供一种 用于基站收发信机中射频前端装置的谐波抑制方法及射频前端装置， 以降 低由于发信信号泄漏到收信通道的低噪声放大器中造成的谐波信号， 并克 服现有技术中由于引入额外损耗而造成收信通道噪声系数上升， 从而影响 系统的上行接收灵敏度以及在射频开关选型受限的问题。 根据本发明的一个方面， 提供了用于基站收发信机中射频前端装置的 谐波抑制方法， 其中收发信机中的低噪声放大器采用 PHEMT场效应管构 成， 所述方法包括： 根据基站收发信机的工作状态， 对低噪声放大器的栅 极负栅压进行切换控制， 使低噪声放大器工作在不同的状态。
优选地，所述方法具体包括： 当基站收发信机处于接收信号的状态时， 控制低噪声放大器的栅极负栅压， 使栅极负栅压工作在静态工作点上； 当 基站收发信机处于发送信号的状态时， 控制低噪声放大器的栅极负栅压， 使低噪声放大器处于深度截止状态。
根据本发明的另一个方面，提供了一种基站收发信机的射频前端装置， 包括：
射频开关， 用于转换收信通道和发信通道；
功率放大器，用于放^^信电路输出的射频信号，通过天线发射出去； 低噪声放大器， 采用 PHEMT场效应管构成， 用于对天线接收的射频 信号进行线性低噪声放大， 输出到收信电路； 以及
栅极电压切换控制电路， 用于控制所述低噪声放大器的栅极负栅压； 基带电路， 用于控制所述射频开关、 所述功率放大器、 所述低噪声放 大器和所述栅极电压切换控制电路的工作状态。
本发明通过在 TDD系统收发信机中增加栅机电压切换控制电路， 对由 PHEMT场效应管构成的低噪声放大器的栅极（也称作 G极） 电压进行切换 控制， 可以降低由于发信信号泄漏到收信通道的低噪声放大器而产生的谐 波信号， 其信号电平降低了 15-20dB左右。 而且新增加的切换控制电路实 现简单， 大大降低了系统成本和设计的复杂性， 同时本发明不会在收发信 通道上引入额外的损耗， 因此不会对系统的接收灵敏度造成影响。 此外， 本发明适用于低噪声放大器的栅极需要加负栅压的时分双工体制的基站系 统。 附图说明
图 1是一种现有技术中的收发信机射频前端装置的结构示意图； 图 2是根据本发明的用于射频前端装置的谐波抑制方法的流程图； 图 3是才艮据本发明的一个实施例的射频前端装置的结构示意图； 图 4是根据本发明的另一个实施例的射频前端装置的结构示意图； 图 5是在图 4所示实施例中的射频前端装置的工作状态和低噪声放大 器的栅极偏置电压的时序图。 具体实施方式
相信通过以下结合附图对本发明的优选实施例的详细描述， 可以更好 地理解本发明的上述和其他目的、 特征及优点。
图 1已经在背景技术部分进行了描述， 此处不再赘述。
图 2是根据本发明的用于射频前端装置的谐波抑制方法的流程图， 该 射频前端装置包括射频开关、 功率放大器、 低噪声放大器和基带电路， 其 中低噪声放大器是采用 PHEMT场效应管构成， 基带电路控制其他元件的工 作状态。 在步骤 210, 当收发信机处于接收信号的状态时， 对低噪声放大 器的栅极负栅压进行控制， 使低噪声放大器工作在静态工作点上， 同时导 通收信通道； 在步骤 220， 当收发信机处于发送信号的状态时， 导通发信 通道， 同时控制低噪声放大器的栅极负栅压， 使低噪声放大器处于深度截 止状态。
通过以上描述可以看出， 采用本实施例的谐波抑制方法， 可有效地降 低发信信号功率泄漏到低噪声放大器而产生的谐波信号电平。
图 3是根据本发明的一个实施例的射频前端装置的结构示意图， 主要 包括以下元件： 射频开关 101、 功率放大器 102、 釆用 PHEMT场效应管 构成的低噪声放大器 103、 基带电路 304以及新增的栅极电压切换控制电 路 305。 其中：
射频收发开关 101， 与天线连接， 主要用于实现收发信机中收发通道 的转换， 其根据系统的需要， 完成«_通道的时隙转换， 以便 TDD系统完 成发信和收信切换的时分双工功能；
功率放大器 102 用于对收发信机中发信电路输出的射频信号进行放 大， 使其符合系统要求的输出功率， 并在发信通道导通时， 通过射频开关
101和天线发射出去；
低噪声放大器 103在收信通道导通时， 将通过天线和射频开关 101接 收到的射频信号进行线性低噪声放大， 使得这些射频信号经过放大后， 其 电平和信噪比能达到系统的要求，然后输出到收信电路进行进一步的处理； 在本实施例中， 低噪声放大器 103采用的是 PHEMT场效应管；
栅极电压切换控制电路 305则对低噪声放大器 103的栅极负栅压进行 切换控制， 即在系统处于接收或发送状态时， 对栅极负栅压进行不同的控 制， 使低噪声放大器 103处于不同的工作状态；
基带控制电路 304作为整个装置的控制元件， 完成对射频开关 101、 功率放大器 102、 低噪声放大器 103以及栅极电压切换控制电路 305的控 制， 即这些元件都是根据基带控制电路 304输出的控制信号进行操作的。
图 3所示的实施例的工作过程如下：
当系统处于接收状态时， 基带电路 304根据系统的时序要求， 输出射 频开关 101的控制信号， 在该控制信号的作用下， 射频开关 101完成状态 切换， 处于收信工作状态。 基带电路 304控制栅极电压切换控制电路 305 的工作状态， 然后在栅极电压切换控制电路 305的控制下， 低噪声放大器 103 的栅极负偏压工作在满足低噪声放大器正常放大所需的静态工作点 上。 同时， 基带电路 304控制低噪声放大器 103处于收信状态， 这样由射 频开关 101和低噪声放大器 103构成的收信通道导通， 射频前端装置处于 收信通道状态。 由天线接收的射频信号经过射频开关 101、 低噪声放大器 103的放大后输出到随后的收发信机的收信电路。
当系统处于发送状态时， 基带电路 304根据系统的时序要求， 输出射 频开关 101的控制信号， 在该控制信号的作用下， 射频开关 101完成状态 切换， 处于发信工作状态。 基带控制电路 304发出控制信号， 使功率放大 器 102处于发信状态， 这样由射频开关 101和功率放大器 102构成的发信 通道导通， 射频前端装置处于发信通道状态。 同时， 基带电路 304控制栅 极电压切换控制电路 305的工作状态， 使低噪声放大器 103的栅极负栅压 增大， 使得低噪声放大器 103处于深度截止状态。 这样， 由发信通道输出 的射频信号再经过射频开关 101和天线发射。
下面具体描述栅极电压切换控制电路 305的工作原理及过程： 当射频前端装置处于发信状态时， 发信通道导通， 待发送的射频信号 经过功率放大器 102的放大， 输入到射频开关 101中， 该射频信号的大部 分通过天线辐射到空中， 小部分信号由于射频开关 101的隔离度有限而泄 漏到收信通道的低噪声放大器 103， 并在低噪声放大器 103的非线性作用 下产生谐波信号， 该谐波信号再经过射频开关 101和天线辐射到空中。
为了减小低噪声放大器 103输出的谐波信号， 基带电路 304控制栅极 电压切换控制电路 305的工作状态， 以提高低噪声放大器 103的栅极负栅 压， 使其中的 PHEMT场效应管的导电沟道在栅极高负电压形成的强电场下 完全被截止， 导致场效应管不导通。 这样， 当发信通道的射频信号泄漏到 收信通道的低噪声放大器 103时， 由于构成低噪声放大器 103的 PHEMT场 效应管始终处于深度截止状态， 并且在这种情况下， 场效应管的输入阻抗 和正向转移导纳等工作状态在一定范围内与外加信号的大小基本无关， 因 此低噪声放大器 103的非线性得到了改善， 由于低噪声放大器 103的非线 性引起的谐波信号的电平也降低了。 为了保证 PHEMT场效应管始终处于深 度截止状态， 加在 PHEMT场效应管栅极的负栅压的值的选择应满足： 在考 虑了射频泄漏信号的影响后， PHEMT 场效应管的峰值电压不超过栅极的击 穿电压。
当射频前端装置处于收信状态时， 收信通道导通， 基带电路 304控制 栅极电压切换控制电路 305的工作状态， 使低噪声放大器 103的栅极负栅 压工作在满足低噪声放大器正常放大所需的静态工作点。
通过以上描述可知， 采用本实施例可以降低由于低噪声放大器的非线 性引起的谐波信号， 并且设计简单， 易于实现。
图 4是根据本发明的另一个实施例的射频前端装置的结构示意图， 其 中与图 3所示实施例相同的部分采用相同的标记， 并省略其说明。 实际上， 图 4所示实施例是对图 3所示实施例的具体实现，给出了低噪声放大器 103 的具体结构示意。
如图 4所示，射频开关 101采用了通用的单刀双掷射频集成开关 401， 其控制管脚连接基带电路 304输出的射频开关控制信号， 其它 3个端口分 别连接天线、功率放大器 102的输出端口和低噪声放大器 103的输入端口。 低噪声放大器 103采用通用的双电源供电的 PHEMT放大器， 包括电阻 Rl、 R2、 R3、 电感 L1和 PHEMT场效应管。栅极电压切换控制电路 305由高速数 字多路选择器 405构成。
当系统工作在收信状态时， 基带电路 304输出射频开关 101的控制信 号， 使得射频开关 101在该控制信号的作用下完成工作状态的切换， 工作 在收信状态。 同时， 基带电路 304也控制低噪声放大器 103处于收信工作 状态， 并且控制高速数字多路选择器 405的 XI- X通路导通， 使 -5V电压通 过电阻 R1和 X1-X通路加到电阻 R2上， 再通过电感 L1接到 PHEMT场效应 管的栅极， 这样 PHEMT场效应管的栅极负栅压由- 5V电压通过电阻 Rl、 R2 的分压得到。 因此， 合理选择电阻 Rl、 R2的数值可以使 PHEMT场效应管的 栅极获得合适的偏置电压， 使 PHEMT场效应管构成的低噪声放大器 103工 作在放大状态， 这样， 由射频开关 101和低噪声放大器 103构成的收信通 道处于正常的工作状态，从而实现对天线输入射频信号的低噪声放大功能。
当系统工作在发信状态时， 基带电路 304分别输出射频开关 101和功 率放大器 102的控制信号， 使得射频开关 101和功率放大器 102完成工作 状态的切换， 工作在发信状态， 实现对收发信机输出的发信信号的正常放 大功能。同时，基带电路 304控制高速数字多路选择器 405选通 X0- X通路， 使- 5V电压通过电阻 R3和 X0- X通路加到电阻 R2上， 再通过电感 L1接到 PHEMT场效应管的栅极，这样 PHEMT场效应管的栅极负栅压由 -5V电压通过 电阻 R3、 R2的分压得到。 因此， 选择电阻 R3的值远小于电阻 R2的值， 使 电阻 R3上的压降可以忽略， 那么， PHEMT场效应管栅极得到的偏置电压将 接近电源电压 -5V，使由 PHEMT场效应管构成的低噪声放大器 103工作在深 度截止状态， 提高了低噪声放大器的线性性能， 从而可以降低系统的谐波 信号电平。 图 4所示实施例的工作状态和低噪声放大器 103的栅极偏置电压的时 序如图 5所示。
通过以上的描述可知， 本实施例可以不改变原有基带的控制软件， 通 过对低噪声放大器的栅极偏置电压进行控制， 就可降低由于发信信号泄漏 到低噪声放大器而造成的谐波信号。

Claims

权利 要 求 书
1.一种用于基站收发信机中射频前端装置的谐波抑制方法， 其中低噪 声放大器采用 ΙΉΕΜΤ场效应管构成， 其特征在于， 所述方法包括： 根据 基站^ C信机的工作状态， 对低噪声放大器的栅极负栅压进行切换控制， 使低噪声放大器工作在不同的状态。
2.根据权利要求 1所述的用于射频前端装置的谐波抑制方法， 其特征 在于， 所述方法具体包括： 当基站收发信机处于接收信号的状态时， 控制 低噪声放大器的栅极负栅压， 使栅极负栅压工作在静态工作点上； 当基站 收发信机处于发送信号的状态时， 控制低噪声放大器的栅极负栅压， 使低 噪声放大器处于深度截止状态。
3.一种基站收发信机的射频前端装置， 包括：
射频开关， 用于转换收信通道和发信通道；
功率放大器，用于放 信电 i«出的射频信号，通过天线发射出去； 低噪声放大器， 采用 PHEMT场效应管构成， 用于对天线接收的射频 信号进行线性低噪声放大， 输出到收信电路；
其特征在于， 还包括：
栅极电压切换控制电路， 用于控制所述低噪声放大器的栅极负栅压； 基带电路， 用于控制所述射频开关、 所述功率放大器、 所述低噪声放 大器和所述栅极电压切换控制电路的工作状态。
4.根据权利要求 3所述的基站收发信机的射频前端装置,其特征在于， 所述栅极电压切换控制电路进一步包括： 高速数字多路选择器， 用于在所 述基带电路的控制下选择通道。
5.根据权利要求 3所述的基站收发信机的射频前端装置，其特征在于， 所述低噪声放大器采用通用的双电源供电的 PHEMT放大器， 包括电阻 Rl、 R2、 R3、 电感 L1和 PHEMT场效应管； 其中电阻 R1和 R2的值满足： PHEMT 场效应管栅极的偏置电压工作在静态工作点； 电阻 R3的值远小于电阻 R2 的值。
PCT/CN2004/001541 2004-12-28 2004-12-28 Procede de suppression harmonique destine a un emetteur-recepteur bs et dispositif rf frontal Ceased WO2006069476A1 (fr)

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CN114421901A (zh) * 2021-12-14 2022-04-29 北京遥感设备研究所 一种利用放大器电路替代开关的装置及方法

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WO2012013240A1 (en) * 2010-07-30 2012-02-02 Laird Technologies Ab Auxiliary antenna device, antenna set, and handheld radio communication device
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