WO2006061073A1 - Microcapteur integre et procede de fabrication - Google Patents

Microcapteur integre et procede de fabrication Download PDF

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Publication number
WO2006061073A1
WO2006061073A1 PCT/EP2005/011989 EP2005011989W WO2006061073A1 WO 2006061073 A1 WO2006061073 A1 WO 2006061073A1 EP 2005011989 W EP2005011989 W EP 2005011989W WO 2006061073 A1 WO2006061073 A1 WO 2006061073A1
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WO
WIPO (PCT)
Prior art keywords
sensor
silicon layer
microsensor
substrate
carrier plate
Prior art date
Application number
PCT/EP2005/011989
Other languages
German (de)
English (en)
Inventor
Manfred Brandl
Robert Csernicska
Franz Schrank
Original Assignee
Austriamicrosystems Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austriamicrosystems Ag filed Critical Austriamicrosystems Ag
Publication of WO2006061073A1 publication Critical patent/WO2006061073A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00357—Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the invention relates to a microsensor according to the preamble of patent claim 1.
  • Such a microsensor is known, for example, from DE 100 27 234 A1.
  • a microsensor is described with a circuit integrated in a carrier plate and a micromechanical sensor element mounted thereon.
  • the sensor element is mechanically and electrically connected by a circumferential solder seam to the integrated circuit.
  • Microsensors are also known, which are connected by means of bonding wire connections with the contacts of a carrier plate.
  • this creates a high production cost and requires packaging, in which also or the bonding wires with protected or at least must be taken into account. This precludes the usability of particularly cost-effective packaging processes.
  • Microsensors for measuring inertia or inertial forces such as those used in the automotive industry as acceleration sensors for navigation and safety systems, are known.
  • wire bonding techniques or connections in flip chip technology have been used so far.
  • the invention has for its object to provide a microsensor of the type mentioned with an improved connection between a sensor element and the contacts on the carrier plate.
  • the microsensor should be able to be manufactured in the wafer composite.
  • the invention provides a microsensor in which a microelectromechanical system, a so-called MEMS device with sensor function, is formed in a substrate which has a crystalline silicon layer on the surface.
  • the microsensor is also arranged and fixed on a carrier plate having electrical contacts.
  • the silicon layer is set in an electrically conductive manner and connected to the electrically conductive contacts via a wafer bonding connection, which represents the electrical and mechanical connection between sensor and carrier plate.
  • the structure of the microsensor according to the invention therefore comprises an integrated contacting which is realized solely by structuring the silicon layer and its electrical connection to the carrier plate by means of wafer bonding. This means that no additional effort is required to make electrical contacts of the sensor with the outside world.
  • the sensor therefore has no sensitive bonding wires, which would require special protection in the packaging of the component.
  • the sensor according to the invention has no solder joints, which are also mechanically and thermally sensitive and can affect the function of the sensor.
  • the contacts having carrier plate can provide electrical interconnections and functions. It is also integrated and can be manufactured independently of the sensor.
  • the microsensor according to the invention has a MEMS structure, thus has electrical and mechanical functions and is produced in particular by microstructuring techniques.
  • the electrical and mechanical components of a MEMS sector can be produced by working out of a compact substrate and in particular of silicon. It is also possible to produce the constituents by means of a structured layer structure, which may include the processes of layer deposition, structuring and optionally detachment of low-lying "trapped" sacrificial layers.
  • the MEMS sensor can contain freely movable or only flexible parts that are fixed on at least one end, but can fulfill a mechanical function with another end or a surface area and are thus at least partially movable.
  • a MEMS sensor has a sensor function, wherein preferably the capacitance of the sensor is changed by the movement of the movable sensor part and supplies the measurement signal dependent on the measured variable.
  • Such a sensor may, for example, be an acceleration sensor which has an inert component relative to the acceleration, for example a bending beam.
  • a further preferred application can be found by a sensor according to the invention as a rotation rate sensor which utilizes the effect of the Coriolis force.
  • the sensor may also be a magnetic sensor and in particular a Hall sensor that is sensitive to the angle of incidence and the strength of a magnetic field. It is also possible to form a MEMS sensor as a pressure sensor or chemical sensor which generates a mechanical change on the sensor via a chemical-physical interaction, which in turn can be read out as an electrical measurement signal.
  • the substrate on which or in which the MEMS sensor system is formed has at least one mechanical carrier function, and therefore consists of a mechanically stable, solid and in particular structurable material.
  • the substrate provides the base material for the construction of the sensor system and therefore comprises at least partially electrically conductive layers or layer regions.
  • the substrate may be a unitary material.
  • the microsensor can also be structured out of a layer structure which comprises at least two layers, or is composed by wafer bonding from at least two wafers which can be processed separately from one another. It is also possible to produce the substrate by a combination of the methods mentioned, or to use such a substrate for the MEMS system.
  • the substrate is preferably a silicon wafer, or an SOI substrate (silicon on insulator) or another arbitrary layer structure on a mechanically stable carrier substrate.
  • a substrate which has a monocrystalline silicon layer, which preferably has a defined thickness and is arranged above a layer of a dielectric.
  • Such substrates may be manufactured by wafer bonding, wherein a first wafer having the dielectric layer with a silicon wafer is connected.
  • Particularly stress-free is a structure in which both wafers consist of crystalline silicon (SOI wafer).
  • the wafer bonding compounds comprise those in which a mechanically stable structure is formed between the surfaces to be joined, in particular by reaction of the interfaces.
  • the invention is limited to electrically conductive wafer bonding compounds which are permeable to the measurement signal supplied by the sensor, or do not oppose the measurement signal to excessive electrical resistance.
  • Well suited as wafer bonding compounds are for example eutectic compounds which are produced by eutectic wafer bonding. Two layers of material are brought into contact with each other, which together form a homogeneous phase with a lower melting point than the starting materials.
  • Eutectic wafer bonding compounds can be made at relatively moderate temperatures of less than 400 degrees. They create both mechanically and thermally stable connections and are electrically conductive. Waferbond compounds can also be produced virtually stress-free.
  • Preferred eutectic is silicon-gold eutectic, which has a melting point of about 363 degrees Celsius and can be formed at maximum temperatures up to 410 degrees Celsius under appropriate contact pressure. It has the necessary electrical conductivity, is mechanically strong and thermally stable.
  • the silicon layer of the substrate is structured such that it forms a frame enclosing the microelectromechanical system and thus closed.
  • This silicon frame is connected to a correspondingly formed, likewise frame-shaped closed wafer bond with the carrier plate so that a gas-tight closure of the microelectromechanical system is formed.
  • the wafer bond provides the MEMS system with protection against environmental influences, in particular protection against mechanical or chemical action, against moisture or too rapid a change in these environmental conditions.
  • the secure encapsulation ensures a stable electrical and mechanical function of the sensor, whereby the aging stability is increased. By including an atmosphere of fixed composition, the sensor function is stabilized.
  • a vacuum-operated MEMS system has no interference with an enclosed atmosphere, which can lead to noise of the sensor signal in particular by Brown's molecular motion. In this way, the sensor sensitivity is improved.
  • the carrier plate has electrical contacts to which an electrical connection to the electrically active parts of the MEMS system is made.
  • the carrier plate has contacts which serve for the external connection of the microsensor. Between the contacts and the external connection, an integrated circuit can be arranged.
  • the carrier plate is designed as an IC component, in particular as a CMOS component.
  • This IC device can have various functions, for example, to provide the sensor with the necessary voltage or the necessary current.
  • the IC component can control the sensor, in particular at certain time intervals or even permanently pick up the sensor signal.
  • the measurement signals supplied by the sensor can also be processed and converted into usable output signals. It is possible, for example, to generate a voltage as an output signal from the measurement signal.
  • the IC component may include an amplifier that amplifies the possibly weak measurement signal of the sensor. It is also possible to convert an optionally non-linear dependence of the measurement signal supplied by the sensor from the variable to be measured into a linear output signal, so that a linear dependence of the output signal on the physical quantity to be measured is obtained.
  • a logic circuit may be incorporated in the IC device, which triggers or makes additional control functions in response to the supplied output signal.
  • integrated electrical structures may be incorporated with the sensor in the integrated circuit device or in the integrated circuit integrated with the carrier board.
  • an electrode which enters into capacitive interaction with a sensor component and thus forms part of the sensor system.
  • This capacitive electrode can, for example, measure an acceleration-dependent capacitive change with a movable sensor component, for example a bending beam in an inertial sensor.
  • FIG. 1 shows a known sensor arrangement in schematic cross section
  • FIG. 2 shows a sensor according to the invention in a schematic cross section
  • FIG. 3 shows the sensor fragmentary in schematic cross-section prior to the production of the wafer bonding compound
  • FIG. 4 shows a detail of a wafer bond in schematic cross section.
  • FIG. 1 shows a known sensor arrangement with a microsensor.
  • a microsensor MS which is arranged as a MEMS system on a substrate SUB and the IC component IC separate components, which are electrically connected to one another via a bonding wire BW.
  • the arrangement in turn is connected to a leadframe LF, which is part of a housing in which the sensor arrangement is tightly encapsulated against environmental influences.
  • the microsensor MS is, for example, an inertial sensor which receives accelerations along a main axis (indicated by the double arrow) and generates a sensor signal which is passed to the IC component IC where it is processed and / or evaluated.
  • FIG. 2 shows a microsensor according to the invention, which may have a similar design with respect to the micromechanical system and may have the same function as a known microsensor shown in FIG. 1, for example.
  • the sensor components are only schematically indicated and comprise in the present case, in which the microsensor is designed as an inertial sensor, at least one sensor tongue ST which is attached at one end, while the other end due to the flexibility of the material used and its inertia at Acting acceleration, performs a deflection, for example, in the plane of the double arrows drawn or even vertically thereto.
  • the sensor comprises vertical connection structures VS1 and VS2, which consist of electrically conductive material and via which the electrical connection of the sensor takes place.
  • a sealing frame SF is shown, which encloses the MEMS system as a ring-shaped closed.
  • All parts of the sensor plane SE are preferably formed of the same material, in particular of conductively adjusted and therefore correspondingly doped silicon.
  • the conductivity of the silicon is not set too high in order to guarantee good operability of the sensor. It is e.g. a conductivity of about 1 Ohmzentimeter sufficient.
  • the substrate comprises a carrier substrate having on the surface an insulator layer IS, on which an epitaxial silicon layer is applied in a desired thickness.
  • the insulator layer can serve as etch stop layer for structuring the components of the sensor plane SE from the underside.
  • a part of the structures of the sensor plane SE can also be structured from the rear, ie from the side of the sensor plane facing the substrate SUB.
  • the substrate can be opened in a manner known per se and the structures can be uncovered or produced by structuring processing.
  • the structure is designed such that it can be produced in a manner known per se by structuring from the front side (bottom side in the figure).
  • the sealing frame SF and the vertical connection structures VS lie in one plane, so that a simple connection these structures with the support plate TP by wafer bonding is possible.
  • the sensor tongue ST is arranged at a distance both to the substrate SUB and to the carrier plate in order to ensure free mobility. The distance can also be ensured by depressions in the carrier plate.
  • the carrier plate TP is made of a mechanically stable material, on the surface of which bonding structures are arranged. A part of the bonding structures is connected to electrical conductor tracks LB, which are integrated on the surface or in the carrier plate TP and, as electrical contacts EK, enable the electrical connection of the microsensor.
  • the parts of the sensor plane SE, in particular the undersides of the sealing frame SF and the vertical connecting structures VS, which are provided for connection, are placed on these bonding structures and connected by means of a wafer bonding method.
  • the wafer bonding method generates electrically conductive connections between the vertical connection structures VS and the conductor tracks LB.
  • the carrier plate TP may also comprise at least one integrated circuit.
  • the electrical connection of the sensor element to the outside world is effected via a further electrical contact AK, which is also arranged, for example, on the surface of the carrier plate next to the sensor arrangement and is in electrical connection with the conductor track LB.
  • At least two electrical connections are respectively provided for the sensor element and accordingly also for the carrier plate.
  • the power for example, the application of a predetermined operating voltage.
  • the carrier plate TP can also be an IC component, on the surface of which the corresponding bonding structures are applied for connection to the elements of the sensor plane SE are.
  • the wafer bonding connections to the sealing frame SF are likewise electrically conductive, they generally have no connection to the conductor tracks LB and thus to possible integrated circuits within the carrier plate TP.
  • the sealing frames can also be used for shielding and are then at substrate potential.
  • the vertical connection structures VS1, VS2 may be of limited cross-section and have any cross-sectional shape.
  • the cross section is preferably sufficient, depending on the conductivity of the material of the sensor plane SE, to guide the sensor signal reliably to the IC or, in general, to the interconnection of the carrier plate TP.
  • the sealing frame SF circulates the entire area of the sensor plane and encloses the microelectromechanical system.
  • the sealing frame SF closes circumferentially tight not only with the support plate TP but also with the substrate SUB, so that enclosed within the sealing frame between substrate SUB and support plate TP, a sealed cavity is formed, for example, maintains a vacuum.
  • the boundary surface between the sealing frame SF and the substrate SUB consists, for example, in its uppermost insulating layer IS, which is applied over the entire surface or also structured in accordance with the sensor plane SE.
  • FIG. 3 shows the arrangement shortly before the manufacture of the honeycomb connection on the basis of a detail in schematic cross section.
  • the carrier plate TP comprises at least one isolation region IG, which consists of a dielectric, and in which at least one conductor track LB and optionally an integrated circuit IC is embedded.
  • the insulated region IG can be applied to a baseplate GP or represent the cover layer of an integrated semiconductor component.
  • Structures HS, KS, MS are preformed on the surface of the carrier plate TP, which are provided for the electrical and mechanical connection with the parts of the MEMS structure. are seen. These comprise at least one metal layer MS.
  • auxiliary layers such as an adhesive layer HS and a contact layer KS may be provided.
  • an adhesive layer HS and a contact layer KS are well suited.
  • the metal layer consists of the metal which is to form the later eutectic compound with silicon, in particular of gold.
  • the bonding structure which is provided for connection to the vertical connection structures VS, is connected to the conductor LB via a through-connection DK, for example, and represents the electrical contact EK.
  • the sensor plane SE of the micro-electro-mechanical system is formed, for example, of electrically conductive monocrystalline silicon. Between the substrate and silicon layer is still an insulating layer of a dielectric disposed.
  • a polysilicon layer SS is applied on the underside of the provided for connection to the carrier plate parts of the silicon layer.
  • a dielectric layer DS may be arranged between polysilicon layer SS and silicon layer. This defines the amount of silicon intended for the formation of the eutectic and achieves the formation of the eutectic exclusively in the desired plane.
  • an opening is provided which forms at least one electrical connection between polysilicon layer SS and silicon layer.
  • all structures of the sensor plane SE as shown in Figure 2 to 4 may have on its underside a stage STU. This is structured, for example, together with the freely movable sensor tongue ST. This makes it possible to increase the distance of the bonding structures or the electrical to adjust them to a suitable value.
  • the thickness of the polysilicon layer SS and the metal layer MS are matched to one another in such a way that the associated volume ranges result in the mass fraction that the respective material has in the later eutectic.
  • a layer thickness ratio of gold to polysilicon of 100 to 52 is advantageous, which in the eutectic corresponds to a weight fraction of 94 percent gold.
  • the substrate with the MEMS sensor structure is fitted on the contact structures on the carrier plate TP.
  • the metal of the metal layer reacts with the polysilicon to form a eutectic.
  • FIG. 4 shows the arrangement with ready-made wafer bond connection WBC. While the wafer bonding compound in the region of the sealing frame SF or their adhesive and contact layer is seated on the insulating region IG, in the region of the vertical connection structure VS shown in FIG. 4, an electrically conductive contact is made via the silicon of the connection structure VS, the wafer bonding connection WBC and the adhesion and bonding Contact layer HS, KS made to fürkontak- tion DK, the electrical connection of the micro-electro-mechanical sensor element is guaranteed to the support plate and thus via the external connections AK to the outside world.
  • the invention has been explained by way of example only with reference to the exemplary embodiments, but is of course not limited to these.
  • the invention is also not limited to the eutectic wafer bonding compound and can be replaced by other electrically conductive wafer bonding compounds.
  • the sealing frame SF is not mandatory part of the invention, however, an advantageous embodiment.
  • the exact configuration of the substrate and the carrier plate are variable and not core of the invention.
  • the choice of materials for the sensor plane SE which does not have to consist of uniform material, but may also include other materials and in particular insulators by producing a suitable layer structure, is likewise not restricted. This may be necessary or advantageous especially in connection with other sensor types.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

L'objectif de cette invention est de réaliser un microcapteur sur un substrat en tant que système microélectromécanique (MEMS) à fonction de capteur. A cet effet, au moins la couche supérieure sur le substrat (SUB) du système microélectromécanique est rendue électriquement conductrice et reliée à des contacts électriques d'une plaque de support (TP) à l'aide d'une liaison par collage de plaquettes (WBC) électriquement conductrice. Un circuit intégré (IC), destiné à traiter les signaux du capteur, peut être intégré dans la plaque de support.
PCT/EP2005/011989 2004-12-06 2005-11-09 Microcapteur integre et procede de fabrication WO2006061073A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004058880A DE102004058880B4 (de) 2004-12-06 2004-12-06 Integrierter Mikrosensor und Verfahren zur Herstellung
DE102004058880.5 2004-12-06

Publications (1)

Publication Number Publication Date
WO2006061073A1 true WO2006061073A1 (fr) 2006-06-15

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PCT/EP2005/011989 WO2006061073A1 (fr) 2004-12-06 2005-11-09 Microcapteur integre et procede de fabrication

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DE (1) DE102004058880B4 (fr)
WO (1) WO2006061073A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7540199B2 (en) 2006-06-13 2009-06-02 Denso Corporation Physical quantity sensor

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
DE102007057492A1 (de) * 2007-11-29 2009-06-18 Infineon Technologies Ag Mikroelektromechanisches System

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Publication number Priority date Publication date Assignee Title
US5831162A (en) * 1997-01-21 1998-11-03 Delco Electronics Corporation Silicon micromachined motion sensor and method of making
EP1096259A1 (fr) * 1999-11-01 2001-05-02 Samsung Electronics Co., Ltd. Micro-gyroscope encapsulé sous vide très poussé et méthode pour sa fabrication
US6555901B1 (en) * 1996-10-04 2003-04-29 Denso Corporation Semiconductor device including eutectic bonding portion and method for manufacturing the same
WO2003038449A1 (fr) * 2001-10-29 2003-05-08 Austriamicrosystems Ag Microcapteur
US20030155622A1 (en) * 2001-06-21 2003-08-21 Kiyoshi Ishibashi Acceleration sensor and method of manufacture therof
US20040126920A1 (en) * 2002-03-27 2004-07-01 An Seung Do Micro inertia sensor and method of manufacturing the same

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Publication number Priority date Publication date Assignee Title
AT3609U1 (de) * 1999-06-02 2000-05-25 Austria Mikrosysteme Int Mikrosensor
DE19962231A1 (de) * 1999-12-22 2001-07-12 Infineon Technologies Ag Verfahren zur Herstellung mikromechanischer Strukturen

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Publication number Priority date Publication date Assignee Title
US6555901B1 (en) * 1996-10-04 2003-04-29 Denso Corporation Semiconductor device including eutectic bonding portion and method for manufacturing the same
US5831162A (en) * 1997-01-21 1998-11-03 Delco Electronics Corporation Silicon micromachined motion sensor and method of making
EP1096259A1 (fr) * 1999-11-01 2001-05-02 Samsung Electronics Co., Ltd. Micro-gyroscope encapsulé sous vide très poussé et méthode pour sa fabrication
US20030155622A1 (en) * 2001-06-21 2003-08-21 Kiyoshi Ishibashi Acceleration sensor and method of manufacture therof
WO2003038449A1 (fr) * 2001-10-29 2003-05-08 Austriamicrosystems Ag Microcapteur
US20040126920A1 (en) * 2002-03-27 2004-07-01 An Seung Do Micro inertia sensor and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7540199B2 (en) 2006-06-13 2009-06-02 Denso Corporation Physical quantity sensor
US7950288B2 (en) 2006-06-13 2011-05-31 Denso Corporation Physical quantity sensor

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DE102004058880B4 (de) 2007-12-13

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