WO2006039294A1 - Composite thermoconducteur et ses utilisations pour boitiers microelectroniques - Google Patents

Composite thermoconducteur et ses utilisations pour boitiers microelectroniques Download PDF

Info

Publication number
WO2006039294A1
WO2006039294A1 PCT/US2005/034676 US2005034676W WO2006039294A1 WO 2006039294 A1 WO2006039294 A1 WO 2006039294A1 US 2005034676 W US2005034676 W US 2005034676W WO 2006039294 A1 WO2006039294 A1 WO 2006039294A1
Authority
WO
WIPO (PCT)
Prior art keywords
composite
thermally conductive
filler
oligomer
macrocyclic
Prior art date
Application number
PCT/US2005/034676
Other languages
English (en)
Inventor
Kenneth Heffner
William J. Dalzell
Scott Fleischmann
Original Assignee
Honeywell International, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International, Inc. filed Critical Honeywell International, Inc.
Priority to EP05803123A priority Critical patent/EP1794224A1/fr
Priority claimed from US11/239,713 external-priority patent/US20060067055A1/en
Publication of WO2006039294A1 publication Critical patent/WO2006039294A1/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/295Organic, e.g. plastic containing a filler
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/04Carbon
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08Materials not undergoing a change of physical state when used
    • C09K5/14Solid materials, e.g. powdery or granular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737Organic materials with or without a thermoconductive filler
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199Material of the matrix
    • H01L2224/2929Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344Gold [Au] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29386Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/29393Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205Shape
    • H01L2224/32057Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00013Fully indexed content
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15151Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections

Definitions

  • the present invention relates to electronic systems incorporating thermally conductive materials to help dissipate heat More specifically, the present invention relates to such systems, wherein the thermally conductive material comprises a thermally conductive filler dispersed in a polymer matrix
  • microelectronic components in general are significant heat sources, more modern counterparts of these components tend to generate more heat per unit volume than the earlier embodiments If not appropriately dissipated, such heat can damage or even destroy the components and/or other constituents of the systems that incorporate the components Consequently, the ability to effectively dissipate heat is a key factor limiting the ability to incorporate microelectronic advancements into a variety of different kinds of electronic systems, such as high density interconnect (HDI) product designs
  • thermal management in an electronic system is a critical task to ensure system functionality as well as to maintain the reliability of key system components
  • Heat is mostly generated by active devices, such as processor chips
  • Heat dissipation from an active device has been therefore an important design consideration, particularly due to the increase in the number of circuits per unit area
  • Thermally conductive composites have been proposed to help dissipate heat away from microelectronic devices
  • thermally conductive molding materials for semiconductor technology has been well investigated
  • thermally conductive composites such as epoxies with fused silica filler at about 50% to about 70% filler content, that display a thermal conductivity constant of about 0 5 to aboutl 0 W/m*k
  • U S Pat Nos 6,596,937 and 6,114,413 These relatively modest thermal conductivity characteristics are adequate helping to dissipate heat m earlier microelectronic structures With higher processor speeds and denser packaging designs, however, this level of performance is inadequate
  • these composites tend to have relatively poor rheological properties when fluidized This makes it more difficult from a practical perspective to closely integrate the composites with microelectronic structures containing increasingly small features
  • thermally conductive composites tend to have relatively poor rheological properties when fluidized This makes it more difficult from a practical perspective to closely integrate the composites with microelectronic structures containing increasingly small
  • microelectronics industry especially as applied within the space industry, has been approaching a limit in affordabihty, effectiveness, and/or practicality with respect to thermal management strategies that can meet the demands of advanced microelectronic devices that generate increasing amounts of heat Effective thermal management strategies are clearly needed
  • the present invention provides thermally conductive, electrically insulating composites that can be used to help conduct heat from a heat source such as from microelectronic structures that generate heat during use
  • the present invention is especially useful for helping to dissipate heat in electronic packaging applications
  • the composite may be incorporated into electronic systems, devices, packages, components, component features, and the like in a variety of ways
  • the composite may be interposed, e g , as an adhesive, filler, or the like, between components or component features when it is desired to provide a heat dissipating pathway between such components or component features
  • the composite may also be used to wholly or partially encapsulate systems, devices, components, and/or component features to help dissipate heat from the encapsulated structures
  • the present invention provides thermally conductive composite compositions of extremely low melt viscosity, convertible by polymerization to composites of higher temperature and solvent resistance
  • the composites have extremely high thermal conductivity constants, being greater than about 2 W/m*K, preferably greater than about 3 W/m*K, and even greater than about 4 W/m*K
  • one embodiment of the present invention incorporating about 40% by volume diamond particle filler showed an initial K value of 4 21 W/mK
  • the present invention relates to an electronic system comprising (a) a microelectronic device or power supply component(s) and (b) a thermally conductive, composite in thermal contact with the microelectronic device power supply component(s)
  • the composite is derived from ingredients comprising a macrocyclic oligomer and a thermally conductive filler
  • the present invention relates to a spacecraft comprising (a) a microelectronic device or power supply component(s) and a (b) thermally conductive, composite coating in thermal contact with the microelectronic device or power supply component(s)
  • the composite is derived from ingredients comprising a macrocyclic oligomer and a thermally conductive filler
  • the present invention relates to an electronic system, comprising a heat source comprising a microelectronic device, a heat-dissipating radiator, and a thermal pathway interconnecting the heat source and the radiator.
  • the pathway comprises a thermally conductive, composite comprising a macrocychc oligomer and a thermally conductive filler.
  • the present invention relates to an electronic system comprising a chassis, a heat dissipating radiator thermally coupled to the chassis, a microelectronic device mounted on the chassis wherein the device generates a heat output during use, and a thermally conductive composite encapsulating at least a portion of the microelectronic device.
  • the composite thermally coupled to the radiator to help dissipate heat from the electronic system.
  • the present invention relates to a spacecraft comprising a thermally conductive composite.
  • the composite is derived from ingredients comprising a macrocychc oligomer and a thermally conductive filler.
  • the present invention relates to a method of making a microelectronic device. At least a portion of the device is encapsulated with a thermally conductive composite
  • the coating is derived from ingredients comprising a macrocychc oligomer and a thermally conductive filler.
  • the present invention relates to a method of making an electronic system Heat is dissipated from a microelectronic device at least via a thermal pathway comprising a thermally conductive composite, said composite being derived from ingredients comprising a macrocychc oligomer and a thermally conductive filler
  • the present invention relates to a thermally conductive paste comprising a macrocychc, thermoplastic oligomer and a plurality of thermally conductive particles dispersed in the oligomer.
  • the particles have an average aspect ratio of about 1.1 to about 4: 1 and an average length in the long dimension in the range of 0 01 to 200 micrometers
  • the present invention relates to an electronic system comprising (a) a microelectronic device or power supply component(s) and (b) a thermally conductive, composite in thermal contact with the microelectronic device power supply component(s)
  • the composite is derived from ingredients comprising a macrocyclic oligomer and a thermally conductive filler.
  • the present invention relates to a spacecraft comprising (a) a microelectronic device or power supply component(s) and a (b) thermally conductive, composite coating in thermal contact with the microelectronic device or power supply component(s).
  • the composite is derived from ingredients comprising a macrocyclic oligomer and a thermally conductive filler.
  • the present invention relates to a method of making a microelectronic device. At least a portion of the device is encapsulated with a thermally conductive composite
  • the coating is derived from ingredients comprising a macrocyclic oligomer and a thermally conductive filler
  • the present invention relates to a thermally conductive composite, said composite being derived from ingredients comprising a macrocyclic oligomer and a thermally conductive filler comprising diamond.
  • Fig 1 is a schematic view of a spacecraft incorporating electronic packages in which thermally conductive composites of the present invention encapsulatingly overcoat microelectronic structures to help dissipate heat from those structures,
  • Fig 2 is a schematic view of an alternative embodiment of an electronic package incorporating a thermally conductive composite of the present invention
  • Fig 3 is a schematic view of an alternative embodiment of an electronic package incorporating a thermally conductive composite of the present invention
  • Fig 4 is a schematic view of an alternative embodiment of an electronic package incorporating a thermally conductive composite of the present invention
  • Fig 5 schematically shows three different, representative ways by which a thermal composite coating of the present invention may be formed on representative microelectronic device
  • Fig 6 shows the device of Fig 5 interfaced with a wedge clamp
  • the thermally conductive composite of the present invention generally includes a thermally conductive filler incorporated into an organic mat ⁇ x, wherein the organic matrix is derived from ingredients comprising a macrocyclic oligomer
  • a macrocyclic oligomer refers to a molecule comprising a ring-shaped moiety in which the ring-shaped moiety is characterized by a degree of polymerization of about 2 or more, typically about 2 to about 20, more typically about 2 to about 12, most typically about 2 to about 6
  • Preferred embodiments of the macrocyclic oligomer can be caused to ring open and then undergo polymerization with co-reactive molecules under conditions comprising heating the oligomer optionally in the presence of a catalyst
  • a representative macrocyclic oligomer may be gene ⁇ cally represented by the formula
  • each Z independently may be any divalent moiety, and n is greater than 2 (dimer, t ⁇ mer, tetramer, etc ), preferably 2 to about 50, more preferably 2 to about 20 Generally, each Z is derived from one or more monomers, oligomers, or polymers, preferably monomers, that can couple to provide the desired degree of polymerization and then further couple to form the ring structure
  • macrocyclic oligomers are known Macrocyclic oligomers and methods of making these compounds have been desc ⁇ bed, for example, in U S Pat Nos 6,525,164, 6,436,549, 6,436,548, 6,420,048, 6,420,047, 6,369,157, 6,297,330, 6,187,810, 5,527,976, 5,300,590, 5,191 ,013, and 4,829,144, each of which is incorporated herein by reference m its entirety
  • Preferred macrocyclic oligomers include polyester and polycarbonate macrocyclic oligomers Ma
  • the macrocyclic oligomer may be complexed with one or more metals such as tin, titanium or the like
  • metals such as tin, titanium or the like
  • such metals can form coordination compounds with carboxylate moieties of PAAC or PAArC
  • macrocyclic oligomer materials with lower ionic content are preferred
  • a supply of a macrocyclic oligomer may be viewed as containing a plurality of ring-shaped molecules containing at least one linkage, e g , an ester moiety, carbonate moiety, and/or the like, that can be controllably opened such as by heating to an appropriate temperature
  • the rings Upon opening, the rings generally become relatively short strands incorporating one or more polyme ⁇ zable moieties
  • These polyme ⁇ zable moieties are co- reactive with complementary moieties on other opened strands, growing strands and/or other molecules
  • the strands, growing strands, and co-reactive other molecules thus couple to form higher molecular weight, polymer molecules
  • the ring-shaped, oligome ⁇ c strands tend to exist as a solid at room temperature but melt to form an extremely low viscosity fluid upon heating Upon cooling, the material re ⁇ solidifies Interestingly, typical embodiments of the fluid rings tend to not only melt, but also will open and polymerize when heated in the presence of an appropriate catalyst to temperatures moderately higher than the melting temperature of the ring-shaped oligomers
  • the resultant polymer chains tend to have a melting temperature well above the polymerization temperature such that the polymer chains tend to solidify in situ without requiring cooling as polymerization progresses
  • the longer chains themselves in many embodiments retain thermoplastic characteristics, allowing them to be converted to a fluid state when appropriately heated
  • a specific example of a macrocyclic polyester oligomer commercially marketed by Cyclics Corporation under the CBT 81 trade designation illustrates this melting and polymerization behavior
  • the CBT brand resins are solid at room temperature, and when heated are fully molten above 160 0 C (320°F), with a
  • the fluidized oligomer holds a very high weight loading of conductive filler while still retaining desired rheological properties This allows very high loadings of thermally conductive filler to be used, thus providing unusually high thermal conductivity characteristics while also being isotropic with respect to thermal conductivity in that the composite conducts heat equally well in any direction, e g , any one or more of the x, y, and z axes This means the composite is beneficially used in heat intensive, HDI applications and is especially useful for the space industry, where conductive and emissive heat dissipation is crucial to equipment functionality
  • thermal conductivity may be determined in accordance with the (ASTM E1461) Laser Flash method
  • the thermally conductive filler not only is used to help provide the composite with thermal conductivity characteristics, but also desirably is electrically insulating as well to help preserve desired electronic pathways in electronic devices in which the composite is used
  • the filler will be deemed to be electrically insulating if it has a volume resistivity greater than about 1 x 10 3 ohms, preferably greater than about 1 x 10 8 ohms, more preferably greater than about 1 x IO 16 ohms
  • volume resistivity is determined in accordance with the ASTM D991 test method
  • thermally conductive filler(s) incorporated into the thermally conductive composite may vary over a wide range Representative embodiments may include about 5 volume percent to about 60 volume percent, preferably from about 35 volume percent to about 55 volume percent of filler
  • the particle size of the thermally conductive, electrically insulating particles may vary over a wide range Generally, the particles desirably have an average particle size in the range of from about 0 01 microns to about 1000 microns in the longest aspect of the particle size, preferably about 0 1 to about 200 microns in the longest aspect of the particle size, more preferably about 10 to about 80 microns
  • the particle size and particle size distribution of the thermally conductive filler tends to be substantially preserved upon melting, cooling, or polymerization of the composite
  • Even more preferred filler particles have an average aspect ratio of less than about 4 1 and an average particle size in the long dimension in the range of 10 to 80 micrometers, preferably 20 to 40 micrometers It is also preferred that the particles have a size distribution such that the percentage of the particles with an average length in the long dimension outside such aspect ratios and length dimensions is as low as possible
  • the particles should not be too small
  • a lower particle size, e g nano-scale particles tend to lack sufficient heat carrying capacity to allow efficient heat transfer It is believed that this lack of sufficient carrying capacity may be due the relatively lower surface contact among the particles that occurs as smaller particles are used
  • the particles should not be too big either While larger particles permit relatively closer contact among the filler particles, such larger particles might tend to present an abrasive threat to the delicate surfaces of electronic materials Alternatively, the larger particles may be too large to gam full access to the surfaces of the assembly, and thereby fail to perform
  • average particle size may be determined using ASTM Sieve
  • the thermally conductive filler preferably comprises diamond, either by itself or in combination with one or more other thermally conductive fillers
  • the diamond filler preferably has an average particle size in the long dimension in the range of 10 to 80 micrometers, preferably 20 to 60 micrometers, and more preferably 20 to 40 micrometers
  • Diamond filler provides many advantages Firstly, diamond is an excellent thermal conductor and an excellent electrical insulator Additionally, diamond is very compatible with macrocyclic oligomers, especially macrocyclic polyester oligomers The composite retains excellent low viscosity, flow, wettability and other rheological characteristics when diamond is used even at high loadings Diamond particles also are readily supplied in a suitable particle size range in which the particles are small enough for dense, homogeneous loading in the polymer matrix and yet are large enough to conduct heat effectively.
  • One preferred embodiment of the invention uses particle of the bulk diamond in a size range of 10-20 microns of faceted, low aspect particles This size range and morphology ensures better contact between particles (An essential feature of filled thermally conductive polymers). It also provides for incorporating as much bulk property as possible without impacting the ability of the particles to pass through narrow dimension of the feature size of the microcircuit assembly (e g , pitch size between wirebonds)
  • the polymer matrix may include one or more other polymer, oligomer, and/or monome ⁇ c constituents.
  • examples include other one or more other polyesters, polyurethanes, poly(meth)acrylates, polycarbonates, combinations of these, and the like.
  • Such other constituents may be thermoplastic or thermosetting and are useful to modulate toughness/resilience or to reduce crystallinity of the polymer matrix.
  • copolyesters as described in U S Pat. No 6,420,048 may be used in the practice of the present invention.
  • Other optional ingredients may include one or more of a polymerization catalyst, a colorant such as pigment or dye, an antioxidant, a UV stabilizer, a fungicide, a bactericide, and combinations of the like.
  • a polymerization catalyst such as titanium dioxide
  • a colorant such as pigment or dye
  • an antioxidant such as titanium dioxide
  • a UV stabilizer such as titanium dioxide
  • fungicide such as fungicide
  • a bactericide a bactericide
  • combinations of the like may include one or more of a polymerization catalyst, a colorant such as pigment or dye, an antioxidant, a UV stabilizer, a fungicide, a bactericide, and combinations of the like.
  • comminuted oligomer may be physically blended with the other ingredients and used, in essence, as a powder.
  • the filler and other ingredients can be thoroughly mixed with the fluidized oligomer and then subsequently used in solid and or fluid form.
  • preforms of a suitable shape and dimension may be used to cover a defined area of a circuit, then heated along with the circuit to the required temperature for flowability (e g., 16O 0 C).
  • the fluidized material readily conforms to, underflows and otherwise closely integrates with device features
  • the mate ⁇ al is then solidified via cooling and/or with optional polymerization to thereby encapsulate the coated circuit features.
  • This preform approach can also be done under vacuum for ball grid array and column grid array designs in a process that draws the molten composite under the mounted BGA, yielding an encapsulating undercoat with and without overcoat.
  • the encapsulating mate ⁇ al easily matches the shapes and contours of the encapsulated structures and provides three dimensional pathways for carrying heat away from the structures. This approach is especially useful for encapsulating power supplies, which tend to be significant heat sources.
  • the composite mixture can also be used in the form of a hot-melt spray or thermal spray (i e , a line of site method that deposits fine palletized particles of ohgomer/filler coating as a molten spray to a defined diameter and thickness).
  • Hot-paste deposition may also be used.
  • a typical hot-paste deposition may involve depositing a beaded line of composite using a heated, motor-driven syringe and dispensing reservoir loaded with the composite material. The bead may be applied to the target area using manual or robotic controls. The target substrate may be adjusted in temperature to facilitate this application method.
  • the composite may be integrated into electronic devices with or without polymerization of the macrocyclic oligomers.
  • the macrocyclic oligomers may be polymerized by heating at a temperature within the range of about 200°- 300° C desirably in the presence of a suitable polymerization catalyst, typically in the amount of about 0.01-2 0 and preferably about 0 05-0 5 mole percent.
  • the resulting polymers generally have weight average molecular weights m the range of about 10,000 to about 100,000
  • a composite incorporating relatively greater amounts of the polymerized polymer tends to be more rigid than a composite incorporating relatively greater amounts of the ring-shaped oligomers
  • degree and timing of polymerization, if any, of the oligomer via temperature and catalyst selection
  • partially rigid embodiments may be more desirable in applications m which the composite will be subjected to vibration, mechanical stresses, or the like
  • Less rigid embodiments may be more desirable at the time of encapsulation
  • Composites of the present invention provide significant advantages when used for thermal management for electronic packaging, especially with respect to electronic devices incorporated into spacecraft
  • a key advantage is that the invention enables thermal management properties that dramatically exceed the performance of many conventional composites
  • Representative embodiments of the invention display high thermal conductivity, e g , greater than about 1 W/m*K, preferably greater than about 3 W/m*k, and more preferably greater than about 4 W/m*K
  • Embodiments of the thermally conductive composite may be electrically insulating to provide pathways to dissipate heat without unduly compromising electrical pathways
  • Representative embodiments of the invention desirably may have a volume resistivity of greater than 1 x 10 7 ohm, preferably greater than about 1 x 10 8 ohm, more preferably greater than about 1 x IO 16 ohm
  • Embodiments of the invention may retain their thermoplastic characteristics, even when polymerized Thus, the composite is reprocessable in such thermoplastic embodiments, providing facile methods to rework hardware incorporating these composites
  • the composite may also be used as a thermally conductive adhesive to bond components together
  • the composite is easily integrated into devices
  • the low melt viscosity of the oligomer form means high wettability and close integration with the structure into which the composite is incorporated
  • the composite encapsulates or fills even very fine features when melted, even when highly loaded with filler
  • the composite is easily solidified by cooling if one desires to avoid polymerization or by appropriate heating to polymerize and solidify in situ
  • the degree of chain extension easily can be controlled to large degree based upon temperature
  • the resultant, solidified integrated composite has low voids This enhances the ability of the composite to dissipate heat without impairment from undue void content Indeed, the excellent wettability allows close integration to be achieved via gravity alone, so that one need not resort to more technically intensive integration of the composite into a structure
  • thermally conductive composite of the invention can be incorporated into a variety of electronic systems in a variety of different ways to facilitate thermal management within such systems
  • a preferred mode of practice involves encapsulating electronic structures with the composite to provide significant interfacial surface areas by which to conduct heat away from a heat source This approach is shown in Fig 1
  • FIG 1 schematically shows a portion of an exemplary spacecraft 10 incorporating principles of the present invention
  • spacecraft 10 is shown as including a gull-wmg PEM or ceramic electronic package 12 and a flip chip package 14
  • Each electronic package 12 and 14 is in thermal contact with chassis 16 as described further below, and chassis 16 in turn is in thermal contact with a radiator 18 to help dissipate heat Q generated from electronic packages 12 and 14 into space
  • each laminated board 20 and 24 is in thermal contact with heat sink 28, which in turn is in thermal contact with chassis 16, thereby helping to dissipate heat from packages 12 and 14 into space
  • each laminate board 20 or 24 may be constructed with layers of copper planes that help provide a heat dissipation pathway
  • Each board 20 or 24 also may be constructed with heavily metallized vias or channels beneath the mounted packages 12 and/or 14 to enhance heat transfer
  • the heat sink 28 in a typical embodiment may be formed from a thermally conductive material such as a metal alloy, a metal such as aluminum, a ceramic composite, graphite, or the like
  • the heat sink 28 may incorporate embedded heat pipes (not shown) to help enhance heat dissi
  • a thermal composite coating 38 of the present invention encapsulating overcoats electronic package 12, and a thermal composite coating 40 of the present invention encapsulatingly overcoats electronic package 14
  • Thermal composite coatings 38 and 40 significantly help to conduct heat from packages 12 and 14 to chassis 16
  • the encapsulating, interfacial coatings 38 and 40 advantageously provide direct, omnidirectional, highly thermally conductive pathways for heat dissipation at very high thermal conductivities
  • the thermal composite can be formed from a fluid precursor of the composite containing a macrocyclic oligomer and then solidified by cooling and/or polymerization The resulting solid may undergo very little, some or a higher degree of polymerization as desired Because of the low viscosity of the fluid, the composite very closely integrates with package features, including filling underfills and small volumes Very little if any voids typically are present Shadow 41 designates a random end of chassis 16
  • Fig 2 depicts an integrated circuit device 50 attached to a lead-frame structure 52 through use of thermally conductive composite 54 in accord with the present invention wherein the composite 54 further functions as an adhesive Electrical interconnection to integrated circuit device 50 is accomplished by conventional wire bonding 56 between integrated circuit device 50 and a lead frame structure 52
  • the major heat dissipation occurs through the backside of integrated circuit device 50 via thermally conductive composite 54 to the lead frame structure 52 as a heat spreader Because of a high thermal conductivity of the new thermally conductive composite, heat dissipation is highly efficient
  • Fig 3 depicts an electronic packaging module 60 where two integrated circuit devices 62 are mounted to a printed wiring board 64 via solder bumps 66
  • the back sides of integrated circuit devices 62 are attached to a heat spreader 68 by use of a thermally conductive composite 70 prepared in accord with the present invention
  • Heat spreader 68 is attached to a heat sink 72 Because of the high thermal conductivity of the present composite material, the thermal resistance between an integrated circuit device and a heat spreader is lower than that realized with the structure where a conventional material, such as a thermal grease, is used
  • Fig 4 depicts an application with a printed circuit board or electronic module, which contains thermal vias or plugs within its structure
  • a high performance, high power, integrated circuit device 80 is electrically connected to a printed circuit board or module 82 via wire bonding 84, while a major thermal path is provided by thermal vias or plugs 86.
  • the thermal vias or plugs 86 are filled with the thermal composite of the present invention.
  • a heat sink 88 is attached to the backside of the printed circuit board or module 82 preferably by use of the same thermal composite material used to form the thermal vias or plugs 86.
  • This structure provides several advantages over the conventional thermal vias or plugs which are formed either by electroplating the via holes or by reflowing solder paste to fill them.
  • FIG. 5 schematically illustrates representative modes of practicing the present invention.
  • a microelectronic device 200 incorporating a heat dissipating composite coating 202 of the present invention is shown in the lower center region of the figure.
  • Device 200 generally includes a plurality of microelectronic features 204 through 218 formed on a multi-layer PWB or laminate substrate 220.
  • One of these features 206 constitutes a high heat dissipating processor.
  • Heat dissipating composite coating 202 helps to dissipate heat from device 200 in the x, y, and z directions.
  • coating 202 may have a thickness in the range of about 0 3 mils to about 200 mils, more preferably from about 1 mil to about 30 mils, often from about 1 mil to about 5 mils.
  • Fig 5 shows three different, representative ways by which coating 202 may be formed on device 200.
  • the coating 202 may be applied via hot melt spraying via a device such as a conventional hot melt sprayer 230
  • Sprayer 230 includes a sprayer body 232
  • the thermal composite of the present invention may be pre-formed into any desired shape
  • a thermal composite pre-form of the present invention in the form of cylinder 234 conveniently can be made to fit into feed well 236
  • Pressurized gas is fed to body via supply line 238 while power to operate sprayer 230 is provided to sprayer 230 via line 240
  • Sprayer 230 outputs a spray 242 of fluidized composite to allow the fluidized composite to be deposited onto device 200 with high precision.
  • the coating 202 may be applied via bead deposition using a hot melt gun 250.
  • Gun 250 includes a gun body 252
  • a thermal composite pre-form of the present invention in the form of cylinder 254 conveniently can be made to fit into feed well 256.
  • Pressurized gas is fed to body via supply line 258 while power to operate sprayer 250 is provided via line 260.
  • Sprayer 250 outputs a bead 262
  • the bead approach is useful when it is desired to apply the coating 202 only to a well-contained area.
  • the bead approach also would be useful in combination with vacuum impregnation techniques.
  • device 200 may optionally be heated to further fluidized the deposited coating.
  • the thermal composite of the present invention may be provided as a pre-form such as pre-form 270 or 272 and positioned at will to cover a predetermined area of device 200. After positioning the perform 270 or 272, as the case may be, the device 200 is heated as appropriate to attain the desired degree of encapsulation
  • spacecraft 300 includes chassis 302, wedge clamp 304, radiator 306, thermal composite 308 and 310 of the present invention, and shadow end 312.
  • Example 1 The procedure of Example 1 was followed to apply a composite of the present invention onto a Test SCD memory device (a Single Chip Device test board) to determine electrical compatibility of the composite coating
  • the composite of this example included 40% by weight of diamond particles having an average particle size in the long dimension in the range of from about 2 to about 3 mils
  • the material easily flowed around wires and other features without having to work the composite as was done in Example 1
  • the resultant coating was tested to evaluate the coating's effect upon the quality of the electrical signal to and from the device
  • the coated device passed complete parametric testing (hi and low voltage and amperage, along with signal leakage)
  • the thermal conductivity of the 40% diamond filled material was measured using the Flash Laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nanotechnology (AREA)
  • Combustion & Propulsion (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

La présente invention concerne des composites thermoconducteurs et électriquement isolants, convenant pour évacuer la chaleur d'une source de chaleur comme notamment les structures microélectroniques produisant de la chaleur pendant leur fonctionnement. L'un des aspects de l'invention porte sur un système électronique comprenant un dispositif microélectronique et un composite thermoconducteur en contact thermique avec le dispositif microélectronique. Le composite dérive d'ingrédients comprenant un oligomère macrocyclique et une charge thermoconductrice diamantée.
PCT/US2005/034676 2004-09-30 2005-09-29 Composite thermoconducteur et ses utilisations pour boitiers microelectroniques WO2006039294A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP05803123A EP1794224A1 (fr) 2004-09-30 2005-09-29 Composite thermoconducteur et ses utilisations pour boitiers microelectroniques

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US61494904P 2004-09-30 2004-09-30
US60/614,949 2004-09-30
US11/239,713 2005-09-29
US11/239,713 US20060067055A1 (en) 2004-09-30 2005-09-29 Thermally conductive composite and uses for microelectronic packaging

Publications (1)

Publication Number Publication Date
WO2006039294A1 true WO2006039294A1 (fr) 2006-04-13

Family

ID=35482357

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/034676 WO2006039294A1 (fr) 2004-09-30 2005-09-29 Composite thermoconducteur et ses utilisations pour boitiers microelectroniques

Country Status (2)

Country Link
EP (1) EP1794224A1 (fr)
WO (1) WO2006039294A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103563061A (zh) * 2011-05-27 2014-02-05 住友电木株式会社 半导体装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095052A (en) * 1990-06-28 1992-03-10 The United States Of America As Represented By The Secretary Of The Air Force Low impulse coatings
EP0691413A2 (fr) * 1993-04-06 1996-01-10 Sumitomo Electric Industries, Ltd. Matériau composite renforcé par du diamant et méthode pour sa préparation
WO1999018030A2 (fr) * 1997-10-02 1999-04-15 Biotraces, Inc. Composites a base de diamant a haute conductivite thermique
WO2001004194A1 (fr) * 1999-07-14 2001-01-18 Fibre Optic Lamp Company Limited Procede et materiau destines a ameliorer la conductivite thermique
US20040106713A1 (en) * 2002-12-03 2004-06-03 Avakian Roger W. Use of additives in compounds containing macrocyclic poly(alkylene dicarboxylate) oligomers
WO2004058872A1 (fr) * 2002-12-23 2004-07-15 Dow Global Technologies Inc. Compositions electro-conductrices d'oligomeres macrocycliques polymerises et de nanofibres de carbone

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5095052A (en) * 1990-06-28 1992-03-10 The United States Of America As Represented By The Secretary Of The Air Force Low impulse coatings
EP0691413A2 (fr) * 1993-04-06 1996-01-10 Sumitomo Electric Industries, Ltd. Matériau composite renforcé par du diamant et méthode pour sa préparation
WO1999018030A2 (fr) * 1997-10-02 1999-04-15 Biotraces, Inc. Composites a base de diamant a haute conductivite thermique
WO2001004194A1 (fr) * 1999-07-14 2001-01-18 Fibre Optic Lamp Company Limited Procede et materiau destines a ameliorer la conductivite thermique
US20040106713A1 (en) * 2002-12-03 2004-06-03 Avakian Roger W. Use of additives in compounds containing macrocyclic poly(alkylene dicarboxylate) oligomers
WO2004058872A1 (fr) * 2002-12-23 2004-07-15 Dow Global Technologies Inc. Compositions electro-conductrices d'oligomeres macrocycliques polymerises et de nanofibres de carbone

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103563061A (zh) * 2011-05-27 2014-02-05 住友电木株式会社 半导体装置
EP2717302A1 (fr) * 2011-05-27 2014-04-09 Sumitomo Bakelite Company Limited Dispositif à semi-conducteurs
EP2717302A4 (fr) * 2011-05-27 2015-03-11 Sumitomo Bakelite Co Dispositif à semi-conducteurs
CN103563061B (zh) * 2011-05-27 2016-06-15 住友电木株式会社 半导体装置
US9379051B2 (en) 2011-05-27 2016-06-28 Sumitomo Bakelite Co., Ltd. Semiconductor device
TWI569381B (zh) * 2011-05-27 2017-02-01 住友電木股份有限公司 半導體裝置
TWI569385B (zh) * 2011-05-27 2017-02-01 住友電木股份有限公司 半導體裝置之製造方法

Also Published As

Publication number Publication date
EP1794224A1 (fr) 2007-06-13

Similar Documents

Publication Publication Date Title
US20080007890A1 (en) Thermally conductive composite and uses for microelectronic packaging
US20060067055A1 (en) Thermally conductive composite and uses for microelectronic packaging
EP1654759B1 (fr) Materiaux d'interface thermique a changement de phase contenant de la resine de polyester et une charge d'argile
US6974723B2 (en) Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials
US7060747B2 (en) Chain extension for thermal materials
US7195951B2 (en) Carbon-carbon and/or metal-carbon fiber composite heat spreaders
EP1376689B1 (fr) Corps structurel rayonnant de piece electronique et feuille rayonnante utilisee pour ce corps structurel rayonnant
KR101825278B1 (ko) 전도성 언더필 물질을 포함하는 반도체 장치들과 패키지들, 및 관련 방법들
US6469379B1 (en) Chain extension for thermal materials
US20050061496A1 (en) Thermal interface material with aligned carbon nanotubes
CN102066488A (zh) 热互连和界面材料、它们的制造方法和用途
CN103314435A (zh) 可逆粘合性热界面材料
MXPA06002524A (es) Material conductor termico que utiliza nanoparticulas electricamente conductoras.
US6255139B1 (en) Method for providing a thermal path through particles embedded in a thermal cap
WO2017111945A1 (fr) Matériau d'interface thermique polymère adhésif contenant des charges frittées pour la conductivité thermique dans un boîtier micro-électronique
KR20100133449A (ko) 열적으로 향상된 전기절연 접착용 페이스트
CN107849356A (zh) 高性能、导热表面安装(晶片粘贴)粘结剂
JP2007511101A (ja) Low−k誘電体含有半導体デバイスと共に使用される電子パッケージング材料
JP3492025B2 (ja) 回路基板構造
CA2433637A1 (fr) Materiaux d'interface et leurs procedes de production et d'utilisation
US7608324B2 (en) Interface materials and methods of production and use thereof
KR20120085808A (ko) 에폭시화 너트쉘 오일을 포함하는 열전재
EP1794224A1 (fr) Composite thermoconducteur et ses utilisations pour boitiers microelectroniques
CN107541171A (zh) 一种填充性储能胶及其制备方法
Benson et al. TPolymer Adhesives and Encapsulants for

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2005803123

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

WWP Wipo information: published in national office

Ref document number: 2005803123

Country of ref document: EP