WO2006031366A3 - Traitement electrochimico-mecanique de couche barriere et de metal de bloc entier - Google Patents
Traitement electrochimico-mecanique de couche barriere et de metal de bloc entier Download PDFInfo
- Publication number
- WO2006031366A3 WO2006031366A3 PCT/US2005/029357 US2005029357W WO2006031366A3 WO 2006031366 A3 WO2006031366 A3 WO 2006031366A3 US 2005029357 W US2005029357 W US 2005029357W WO 2006031366 A3 WO2006031366 A3 WO 2006031366A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- processing
- barrier layer
- substrate
- mechanical processing
- full sequence
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title abstract 4
- 239000002184 metal Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000003792 electrolyte Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H01L21/32125—Planarisation by chemical mechanical polishing [CMP] by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Weting (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Electrolytic Production Of Metals (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007531184A JP2008513596A (ja) | 2004-09-14 | 2005-08-18 | フルシーケンス式の金属及びバリア層の電解機械処理 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/940,603 | 2004-09-14 | ||
US10/940,603 US20050077188A1 (en) | 2002-01-22 | 2004-09-14 | Endpoint for electrochemical processing |
US10/941,060 | 2004-09-14 | ||
US10/941,060 US7084064B2 (en) | 2004-09-14 | 2004-09-14 | Full sequence metal and barrier layer electrochemical mechanical processing |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006031366A2 WO2006031366A2 (fr) | 2006-03-23 |
WO2006031366A3 true WO2006031366A3 (fr) | 2006-06-29 |
Family
ID=35788465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/029357 WO2006031366A2 (fr) | 2004-09-14 | 2005-08-18 | Traitement electrochimico-mecanique de couche barriere et de metal de bloc entier |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2008513596A (fr) |
KR (1) | KR100905561B1 (fr) |
WO (1) | WO2006031366A2 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009102694A (ja) * | 2007-10-23 | 2009-05-14 | Ebara Corp | 電解複合研磨方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030136684A1 (en) * | 2002-01-22 | 2003-07-24 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
US6693036B1 (en) * | 1999-09-07 | 2004-02-17 | Sony Corporation | Method for producing semiconductor device polishing apparatus, and polishing method |
US20040043608A1 (en) * | 2002-08-27 | 2004-03-04 | Souichi Katagiri | Method for manufacturing semiconductor device and apparatus for manufacturing thereof |
US6739953B1 (en) * | 2003-04-09 | 2004-05-25 | Lsi Logic Corporation | Mechanical stress free processing method |
US20040134792A1 (en) * | 2000-02-17 | 2004-07-15 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03100987U (fr) * | 1990-01-30 | 1991-10-22 | ||
US7192335B2 (en) * | 2002-08-29 | 2007-03-20 | Micron Technology, Inc. | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
-
2005
- 2005-08-18 JP JP2007531184A patent/JP2008513596A/ja active Pending
- 2005-08-18 WO PCT/US2005/029357 patent/WO2006031366A2/fr active Application Filing
- 2005-08-18 KR KR1020077006589A patent/KR100905561B1/ko not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6693036B1 (en) * | 1999-09-07 | 2004-02-17 | Sony Corporation | Method for producing semiconductor device polishing apparatus, and polishing method |
US20040134792A1 (en) * | 2000-02-17 | 2004-07-15 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
US20030136684A1 (en) * | 2002-01-22 | 2003-07-24 | Applied Materials, Inc. | Endpoint detection for electro chemical mechanical polishing and electropolishing processes |
US20040043608A1 (en) * | 2002-08-27 | 2004-03-04 | Souichi Katagiri | Method for manufacturing semiconductor device and apparatus for manufacturing thereof |
US6739953B1 (en) * | 2003-04-09 | 2004-05-25 | Lsi Logic Corporation | Mechanical stress free processing method |
Also Published As
Publication number | Publication date |
---|---|
KR100905561B1 (ko) | 2009-07-02 |
JP2008513596A (ja) | 2008-05-01 |
WO2006031366A2 (fr) | 2006-03-23 |
KR20070046187A (ko) | 2007-05-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200610045A (en) | Full sequence metal and barrier layer electrochemical mechanical processing | |
ATE366641T1 (de) | Prozesssteuerung beim elektrochemischen mechanischen polieren | |
WO2000026443A3 (fr) | Procede et appareil de depot electro-chimico-mecanique | |
EP0794587A3 (fr) | Procédé et appareil pour récupérer d'éléments d'une batterie étanche | |
EP0822603A3 (fr) | Electrode d'injection d'électrons à deux couches utilisée dans un dispositif électroluminescent | |
WO2001046497A3 (fr) | Procede de reduction electrochimique de colorants reductibles | |
TW200707643A (en) | Semiconductor device having through electrode and method of manufacturing the same | |
WO2005036689A3 (fr) | Batterie, en particulier microbatterie, et sa fabrication a l'aide de la technologie des tranches | |
CN101116205A (zh) | 用于整体式膜电极组件的设计、方法和工艺 | |
EP0814525A3 (fr) | Plaque d'électrode pour batterie à électrolyte non-aqueux, procédé de fabrication et appareil | |
EP1180806A3 (fr) | Pile secondaire et sa méthode de fabrication | |
EP2431497A3 (fr) | Cellules électrochimiques dotées de structures de support de courant à base de couches de réaction électrochimique | |
WO2006041889A3 (fr) | Modification de conception de tampon conducteur pour un meilleur contact plaquette/tampon | |
WO2003009361A3 (fr) | Electro-traitement metallique plan | |
WO2005057711A3 (fr) | Procede pour produire une pile a combustible et pile a combustible ainsi obtenue | |
EP1294034A4 (fr) | Pile a combustible a electrolyte polymere, procede de fabrication d'electrode et dispositif de fabrication | |
WO2007076073A3 (fr) | Condensateur électrochimique-électrolytique et son procédé de fabrication | |
CA2398711A1 (fr) | Procede de fabrication d'un ensemble comprenant un electrolyte porte par une anode, et cellule ceramique comprenant cet ensemble | |
WO2004086542A3 (fr) | Procede de liaison d'une couche de diffusion de gaz a une plaque de separation | |
WO2002054514A8 (fr) | Electrode de type diffusion de gaz, conducteur ionique electroconducteur, procede de fabrication, et dispositif electrochimique | |
EP1160846A3 (fr) | Méthode d'application d'une polarisation électrique pour améliorer le dépôt d'un métal | |
WO2002082567A1 (fr) | Electrode negative pour accumulateur a electrolyte non aqueux et accumulateur a electrolyte non aqueux comprenant cette electrode negative | |
EP1079451A3 (fr) | Pile à combustible à électrolyte polymère solide et procédé de fabrication | |
HUP0303617A3 (en) | Compound having a high conductivity for electrons, electrode for an electrochemical cell which comprises this compound, method for preparing an electrode and electrochemical cell | |
EP0996184A3 (fr) | Anode de haute performance pour pile à combustible à oxyde solide |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2007531184 Country of ref document: JP Ref document number: 200580027704.7 Country of ref document: CN |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020077006589 Country of ref document: KR |
|
122 | Ep: pct application non-entry in european phase |