WO2006028005A1 - Substance ferroelectrique ferromagnetique et processus de production correspondant - Google Patents

Substance ferroelectrique ferromagnetique et processus de production correspondant Download PDF

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WO2006028005A1
WO2006028005A1 PCT/JP2005/016083 JP2005016083W WO2006028005A1 WO 2006028005 A1 WO2006028005 A1 WO 2006028005A1 JP 2005016083 W JP2005016083 W JP 2005016083W WO 2006028005 A1 WO2006028005 A1 WO 2006028005A1
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ferromagnetic
orbit
electrons
orbital
transition metal
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PCT/JP2005/016083
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English (en)
Japanese (ja)
Inventor
Masaki Azuma
Takahito Terashima
Kazuhide Takata
Masayuki Hashisaka
Shintaro Ishiwata
Ko Mibu
Yuichi Shimakawa
Mikio Takano
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Kyoto University
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Priority to JP2006535713A priority Critical patent/JPWO2006028005A1/ja
Publication of WO2006028005A1 publication Critical patent/WO2006028005A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C01G23/003—Titanates
    • C01G23/006—Alkaline earth titanates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G45/00—Compounds of manganese
    • C01G45/006—Compounds containing, besides manganese, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00—Compounds of cobalt
    • C01G51/006—Compounds containing, besides cobalt, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G53/00—Compounds of nickel
    • C01G53/006—Compounds containing, besides nickel, two or more other elements, with the exception of oxygen or hydrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds
    • H01F10/1933—Perovskites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/42—Magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H01F1/407—Diluted non-magnetic ions in a magnetic cation-sublattice, e.g. perovskites, La1-x(Ba,Sr)xMnO3

Definitions

  • the present invention relates to a ferromagnetic ferroelectric that is a functional material having both ferromagnetism and ferroelectricity, and capable of controlling ferroelectricity by a magnetic field and controlling ferromagnetism by an electric field, and a method for producing the same About.
  • Ferroelectric materials are widely used in various devices such as storage media and sensors.
  • the magnitude of polarization can be controlled by applying an electric field and controlling its magnitude. Further, polarization remains even after the applied electric field is removed.
  • a nonvolatile memory can be configured.
  • ferromagnetic materials are also used in various devices such as non-volatile memories, and their control is performed by applying an external magnetic field.
  • ferroelectric ferroelectric a material having both ferroelectricity and ferromagnetism
  • devices having various functions can be realized by utilizing these two properties simultaneously.
  • ferromagnetic ferroelectric a material having both ferroelectricity and ferromagnetism
  • a single material can be used to make a memory that performs recording by ferroelectricity and recording by ferromagnetism independently.
  • the recording capacity (recording density) can be increased as compared with the case where only one of ferroelectricity and ferromagnetism is used.
  • ferroelectricity can be controlled by a magnetic field, and conversely, ferromagnetism can be controlled by an electric field. Therefore, with such a ferromagnetic ferroelectric material, a device having a special function that cannot be obtained with a normal ferroelectric material or a ferromagnetic material can be formed.
  • a spin filter is an element that creates a flow of electrons (current) with the same direction of spin, and is a key device of spintronics (a technology that utilizes the properties of both electrons and spin).
  • the material must be a ferromagnetic insulator. Ferroelectrics are good insulators, so ferromagnetic ferroelectrics are suitable materials for spin filters.
  • Patent Document 1 describes that a ferromagnetic ferroelectric substance has been found in a compound having a perovskite structure (hereinafter referred to as a perovskite type compound).
  • the perovskite structure is represented by the general formula ABX, where layers of AX and layers of BX force are alternately stacked.
  • BaTiO which is a ferroelectric material
  • La which has a giant magnetoresistance effect
  • perovskite a ferromagnetic ferroelectric material
  • BiMnO is mentioned as a type compound. Certainly, this material has ferroelectricity and ferromagnetism.
  • the ferromagnetic transition temperature is 110K, and it is necessary to cool the element for use in non-volatile memory devices.
  • BiFeO is ferromagnetic
  • this substance is actually a weak ferromagnet that produces a magnetic field due to the tilting of antiferromagnetic spins.
  • Patent Document 2 an element capable of forming a perovskite type compound exhibiting ferromagnetism or antiferromagnetism and a perovskite type compound having dielectric properties such as ferroelectricity and antiferroelectricity can be formed.
  • a group of oxide ceramic materials composed of elements is shown.
  • the electromagnetic coupling constant which represents the magnitude of the interaction between dielectric and magnetism, is measured, which shows that there is a correlation between magnetic and dielectric properties in these materials .
  • these materials have both ferromagnetism and ferroelectricity.
  • X-ray diffraction measurement shows that these materials are amorphous, have no crystallinity, and have not been confirmed whether they are single-phase. I can't!
  • Patent Document 1 Japanese Patent Application Laid-Open No. 11-286774 ([0015] to [0017], FIGS. 1 to 4)
  • Patent Document 2 JP-A-5-043227 ([0003] to [0004])
  • the problem to be solved by the present invention is to provide a new group of substances having both ferromagnetism and ferroelectricity.
  • the object is to provide a material having both ferromagnetism and ferroelectricity, particularly at room temperature.
  • a first aspect of the ferromagnetic ferroelectric material according to the present invention which has been made to solve the above-mentioned problems, is a substance having a perovskite structure represented by a composition formula BiMM'O. , M
  • M ' is part or all of the t-orbital of the outermost d-orbitals
  • the second aspect of the ferromagnetic ferroelectric material according to the present invention is represented by a composition formula Pb MM'O.
  • 26 is a substance with a perovskite structure, where M is one of the t orbitals of the outermost d orbitals.
  • 3d-5d transition metal ion refers to a 3d, 4d or 5d !, a transition metal ion that has electrons in one of the electron orbitals and does not have a closed shell structure.
  • a transition metal ion whose 3d orbital has a closed shell structure is called a “3d transition metal ion”.
  • the 4d and 5d orbitals have no closed shell structure!
  • the transition metal ions are called “4d transition metal ions” and “5d transition metal ions”, respectively.
  • M and M ' are preferably 3d transition metal ions.
  • Bi MM'O ⁇ Kooi M is preferably one of Co, Ni, and Cu
  • M ′ is preferably Mn.
  • Bi CuMnO is more desirable because it exhibits both ferromagnetism and ferroelectricity at room temperature.
  • FIG. 1 is a schematic diagram showing a crystal structure of a ferromagnetic ferroelectric material according to the present invention.
  • FIG. 2 is a schematic configuration diagram of an apparatus used for manufacturing a ferromagnetic ferroelectric thin film of the present example.
  • FIG. 4 Chart showing temperature change of X-ray (wavelength 0.042 lnm) diffraction of Bi NiMnO Balta sample.
  • FIG. 5 is a graph showing the temperature change of the relative dielectric constant of Bi NiMnO.
  • FIG. 6 is a graph showing temperature change of magnetic susceptibility of Bi NiMnO.
  • FIG. 7 is a graph showing the magnetization curve of Bi NiMnO.
  • FIG. 8 is a graph showing temperature change in magnetic susceptibility of Bi CuMnO.
  • FIG. 9 is a graph showing the temperature change of magnetic susceptibility of Bi CoMnO.
  • FIG. 10 X-ray diffraction chart ((002) peak of Bi NiMnO thin film prepared in this example.
  • FIG. 12 is a graph showing the change in the dielectric constant of a Bi NiMnO thin film with a magnetic field.
  • the ferromagnetic ferroelectric material of the present invention basically has a perovskite structure.
  • the composition of a substance having a perovskite structure is represented by the general formula ABX as described above.
  • composition is expressed as A B X because one unit is composed of two parts.
  • A is Bi (bismuth) or Pb (lead), and X is 0 (oxygen).
  • B is half of the outermost d orbital, part or all of t orbital and only part of e orbital
  • M ions transition metal ions with electrons, and the other half has electrons in part or all of the t orbital of the outermost d orbitals and no electrons in the e orbitals.
  • composition formula of the ferromagnetic ferroelectric material of the present invention is Bi MM'O or
  • the octahedron shown in a pale color has M ions near the center and 0 2 — ions at the apex of the octahedron.
  • the octahedron 13 (the octahedron shown in dark in the figure) has M ions near the center.
  • the misalignment is also M'O octahedron 13 and the six octahedrons closest to M'O octahedron 13
  • the deviation is M ⁇ octahedron12.
  • the nearest M ⁇ octahedron 12 and M' ⁇ octahedron 13 are one by two.
  • M ion and M 'ion are arranged near the center of octahedron with ions at the apex.
  • the outermost d-electrons of M and M 'ions are one of five orbitals called xy, yz, zx, 3z 2 -r 2 , x 2 -y 2 Placed in.
  • e orbit is 3z 2 -r 2 gauge g
  • 3d-5d transition metal ions that have electrons in part of the e-orbit used as M ions include P g
  • 3d-5d transition metal ions that do not have electrons in the e-orbital used as M 'ions include V 2+ (or more divalent), Ti 3+ , V 3+ , Cr 3+ , Nb 3+ , Ta 3 + (More than trivalent), V 4+ , Cr 4+ , Mn 4+ , Nb 4+ , Mo 4+ , Tc 4+ , Ta 4+ , W 4+ , Re 4+ (more than tetravalent), Mo 5+ , Tc 5+ , Ru 5+ , W 5+ , Re 5+ , Os 5+ (above, pentavalent), Re 6+ , Os 6+ (above, hexavalent).
  • M ions and M 'ions two or more ions that satisfy the above conditions may be used in combination!
  • the Bi 3+ or Pb 2+ at the A site and 0 2 at the X site are non-magnetic because they have no unpaired electrons.
  • M 'ions As shown above, in the ⁇ ion, the outermost d electron is part or all of the t orbital and the e orbital.
  • the antiferromagnetic superexchange interaction between the M ion and M 'ion does not work via the 0 2 -ion, and the ferromagnetic spins that try to align both electron spins in the same direction. Only direct exchange interactions occur. Due to this interaction, strong magnetic properties appear in the material according to the present invention.
  • Bi 3+ or Pb 2+ at the A site has a lone pair of electrons in the spatially protruding 6 s orbit.
  • the Coulomb repulsive force acts between the 0 2 — ion close to the A site and this lone pair, and the crystal structure is distorted in the temperature range below the Curie temperature, and the inversion symmetry is lost.
  • the absence of this inversion symmetry means that the material according to the present invention has ferroelectricity.
  • the group of materials according to the present invention has both ferromagnetism and ferroelectricity.
  • M ions and M' ions have a smaller ion radius than 4d and 5d transition metal ions, and use 3d transition metal ions. It is desirable.
  • Bi CuMnO is higher than room temperature
  • the noroscopic ferromagnetic ferroelectric material can be manufactured by a high-pressure synthesis method.
  • the raw materials are mixed so that the ratio of the number of atoms of A site (Bi or Pb) and M and M 'is 2: 1: 1.
  • the ratio of the number of atoms of A, M, M ′ and 0 in the raw material is 2: 1: 1:
  • an oxidizing agent such as KC10 or AgO, or a reducing agent such as Ti metal.
  • the mixed raw material is heated to 600 ° C to 1500 ° C under a pressure of lGPa to 10GPa. Note that when the temperature is 600 ° C or less or the pressure is lGPa or less, the target ferromagnetic ferroelectric material is not produced. In addition, when the temperature is higher than 1500 ° C, the raw material is decomposed. Furthermore, since the sample can be obtained with a sufficiently high pressure at a pressure of 1 OGPa or less, application of a pressure higher than that will only increase the cost and has no advantage. After heating, the product is cooled to room temperature and the pressure is removed. Thereby, the Balta-like ferromagnetic ferroelectric substance according to the present invention is obtained.
  • a chemical vapor deposition (CVD) method or a sol-gel method is used on a single crystal substrate having a lattice constant close to that of the ferromagnetic ferroelectric material.
  • a thin film can be obtained by epitaxial growth using a laser abrasion method or the like.
  • a perovskite type compound such as SrTiO or BaTiO.
  • Bi When forming, Bi has a high vapor pressure and is likely to precipitate alone. Therefore, epitaxy growth should be performed in a gas containing ozone gas. By using ozone gas, a strong and acidic atmosphere can be obtained, thereby suppressing the precipitation (reduction) of Bi.
  • Bi CoMnO, Bi NiMnO and Bi CuMnO Balta samples As an example of the present invention, Bi CoMnO, Bi NiMnO and Bi CuMnO Balta samples and
  • Bi 0, MnO and MO CoO, NiO or CuO
  • FIG. 2 shows the laser ablation device used for thin film fabrication.
  • This device is a chamber 21 includes a substrate holder 22 for fixing the substrate and a target holder 23 for holding a target as a thin film raw material.
  • the laser light source 24 for irradiating the target with laser light is also provided.
  • an excimer laser is used as the laser light source 24.
  • the chamber 21 is evacuated by a pump 25 and oxygen gas containing ozone is supplied from a gas supply port 26.
  • the thin film formed on the substrate can be observed during film formation by a RHEE D (reflection high-energy electron diffraction) apparatus comprising an electron gun 27a and a screen 27b.
  • the thin film can be uniformly formed by rotating the substrate holder 22 and the target holder 23.
  • An SrTiO single crystal substrate 28 having a (001) surface is placed on the target 29 side (lower side).
  • a target prepared by weighing and mixing CuO) to a ratio of BiO: MnO :: 1: 1: 1 29
  • Figure 3 shows a room temperature test of Bi NiMnO measured using X-rays with a wavelength of 0.0421 nm (0.42 lA).
  • the space group is considered to be C2.
  • a crystal whose space group is C2 is a monoclinic crystal (the unit cell is shown by a one-dot chain line in FIG. 1).
  • the space group is C2
  • the crystal has no inversion symmetry. This is because Bi CoMnO, Bi NiMnO and Bi CuMnO produced in this example all have ferroelectricity. It is shown that.
  • Fig. 4 shows a measurement of a Bi NiMnO Balta sample at a wavelength of 0.0421 nm (0.421 A).
  • the X-ray diffraction pattern is shown when the temperature is 300K and 500K. It has a P2 / n space group with inversion symmetry when the temperature is 500K, while it has inversion symmetry when the temperature is 300K.
  • FIG. 5 shows the results of measuring the temperature change of the relative dielectric constant of BiNiMnO. This dielectric constant is
  • This temperature is the ferroelectric transition temperature of BiNiMnO, and the above X-ray
  • Figure 7 shows the magnetic susceptibility of Bi NiMnO measured by applying an external magnetic field of 100 oersted
  • FIG. 7 (a) shows magnetic field curves measured at multiple temperatures between 5K and 180K.
  • the temperature is 160K and 180K
  • the magnetic field is almost proportional to the magnetic field, but when the temperature is 140K or less, the magnetization increases rapidly as the absolute value of the magnetic field increases near the zero magnetic field.
  • Fig. 7 (b) when the magnetization curve is measured while raising and lowering the magnetic field when the temperature is 5K, hysteresis characteristic to the ferromagnetic material is observed.
  • Bi NiMnO has a strong ferroelectric transition temperature of 485K and a ferromagnetic transition temperature of 140K.
  • FIG. 8 shows the results of susceptibility measurement for Bi CuMnO. From this result, Bi C
  • Bi CuMnO has the same structure as Bi NiMnO at room temperature, so it has ferroelectricity.
  • Bi CuMnO has both ferromagnetism and ferroelectricity at room temperature.
  • Bi CuMnO is both ferromagnetic and ferroelectric
  • It can be used at room temperature as a device that takes advantage of these properties, and does not need to be cooled.
  • FIG. 9 shows the results of susceptibility measurement for Bi CoMnO. From this result, Bi C
  • Bi CoMnO was confirmed to be a material with both ferromagnetism and ferroelectricity.
  • Figure 10 shows the vicinity of the (002) peak in the X-ray diffraction chart of the Bi NiMnO thin film at room temperature.
  • the enlarged view of is shown.
  • the vertical axis represents the X-ray intensity in logarithm. (002) pin of SrTiO substrate
  • the Bi NiMnO thin film has its (001) plane grown in parallel on the (001) -SrTiO substrate.
  • the horizontal axis is the electric field E and the vertical axis is the polarization P. From this PE curve, the Bi NiMnO thin film obtained in this example was separated by 15 ⁇ C / cm 2 at 100K.
  • FIG. 12 shows the result of measuring the change of the dielectric constant of the Bi NiMnO thin film due to the magnetic field.
  • the vertical axis represents a value obtained by dividing the measured dielectric constant by the dielectric constant in a zero magnetic field. From this measurement result, it is clear that Bi NiMnO can control the dielectric constant by applying a magnetic field.
  • the dielectric constant when applying a magnetic field of 90,000 oersted increases by about 4% from the dielectric constant in the zero magnetic field.

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Abstract

L'invention concerne un nouveau matériau ayant simultanément un ferromagnétisme et une ferroélectricité. Il est proposé une substance ferroélectrique ferromagnétique caractérisée en ce qu'elle est une substance de structure pérovskite de formule de composition Bi2MM’O6 ou Pb2MM’O6,selon laquelle M est un ion de métal de transition ayant un électron dans une partie de son orbite eg alors que M’ est un ion de métal de transition n'ayant pas d'électron dans son orbite eg. En particulier, Bi2CuMnO6 présente une température de transition ferromagnétique de 340 K, présentant simultanément un ferromagnétisme et une ferroélectricité même à température ambiante.
PCT/JP2005/016083 2004-09-08 2005-09-02 Substance ferroelectrique ferromagnetique et processus de production correspondant WO2006028005A1 (fr)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007135817A1 (fr) * 2006-05-24 2007-11-29 Japan Science And Technology Agency Élément multiferroïque
JP2008285350A (ja) * 2007-05-16 2008-11-27 Sophia School Corp 常温磁性強誘電性超格子およびその製造方法
WO2014030293A1 (fr) * 2012-08-21 2014-02-27 国立大学法人東京工業大学 Matériau à dilatation thermique négative
JP2014152052A (ja) * 2013-02-06 2014-08-25 National Institute For Materials Science ホモロガス系列層状ペロブスカイト酸化物に基づくペロブスカイトナノシート、および、その用途
KR20170007811A (ko) * 2014-05-20 2017-01-20 마이크론 테크놀로지, 인크 극성, 비대칭성, 및 비-중심-대칭성 강유전성 물질들, 그러한 물질들을 포함하는 메모리 셀들, 및 관련 디바이스들 및 방법들
JP2017048072A (ja) * 2015-08-31 2017-03-09 公益財団法人神奈川科学技術アカデミー 負熱膨張性材料の製造方法
WO2020226302A1 (fr) * 2019-05-03 2020-11-12 울산과학기술원 Matériau à multiferroicité à température ambiante, son procédé de préparation, et dispositif électronique le comprenant

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EP0270099A2 (fr) * 1986-12-04 1988-06-08 Taiyo Yuden Kabushiki Kaisha Céramique diélectrique
JPH02170306A (ja) * 1988-12-23 1990-07-02 Olympus Optical Co Ltd 強磁性強誘電体酸化物及びその薄膜の製造方法
DE4121474A1 (de) * 1990-06-29 1992-01-02 Ube Industries Material mit elektromagnetischer wirkung
JPH07221356A (ja) * 1994-02-01 1995-08-18 Hitachi Ltd 半導体素子とその集積回路
JPH11286774A (ja) * 1998-04-02 1999-10-19 Japan Science & Technology Corp 強磁性強誘電体薄膜とその製造方法

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JPWO2014030293A1 (ja) * 2012-08-21 2016-07-28 国立大学法人東京工業大学 負熱膨張性材料
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JP2017048072A (ja) * 2015-08-31 2017-03-09 公益財団法人神奈川科学技術アカデミー 負熱膨張性材料の製造方法
WO2020226302A1 (fr) * 2019-05-03 2020-11-12 울산과학기술원 Matériau à multiferroicité à température ambiante, son procédé de préparation, et dispositif électronique le comprenant

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