Classifications

• • G—PHYSICS
  • G01—MEASURING; TESTING
  • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
  • G01B11/00—Measuring arrangements characterised by the use of optical techniques
  • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
  • G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry

Definitions

• the invention relates to a device according to the preamble of claim 1, uses according to claim 20 and a method according to FIG. 21.
• Microfluidics in typical cycle times of 15 s per chip on it, the microstructures on these chips to undergo an immediate control.
• Flexibly applicable 3D measuring techniques are also used today in the production of precise tools for the production of microsystem components. Especially for the validation of high-volume production processes, an available measuring system would be a great benefit in order to be able to make statements about the quality of the process and the subsequent product, including reject rates.
• a broad spectrum for the use of the 3D measuring system can also be identified for medical and biological examinations.
• Methods and arrangements are of interest for elucidating the optical conditions in the anterior eye segment, where spatial light modulators can be used as accommodating and stimulus display (see for example DE 103 23 920 A1).
• Measuring method, the working speed and the test costs are decisive criteria for whether existing measuring instruments and measurement techniques meet the requirements of industrial practice, in particular for the quality control of microtechnical components.
• atomic force and test costs are decisive criteria for whether existing measuring instruments and measurement techniques meet the requirements of industrial practice, in particular for the quality control of microtechnical components.
• Electron microscopes with axial and lateral nanometer resolution are used because of the effort and cost only for studies of individual lots. Therefore, for the applications described above, optical measurement methods alone are up for discussion.
• surface light modulators can be used.
• LCD liquid crystal devices
• DMD digital micromirror devices
• Object to be measured and / or used as a shadow mask for imaging in a microscope Object to be measured and / or used as a shadow mask for imaging in a microscope.
• interferometric methods offer the advantage of measuring 3D objects optically without contact over large object distances. For this purpose, the coherent properties of the light are exploited.
• the axial resolution does not depend on the size of the aperture, so that interferometric methods are also suitable for measuring structures with a high aspect ratio.
• Micronics is exploited for maskless lithography (Sandström, T. et al., SPIE Proc., Vol. 4409, 270-276 (2001)).
• optical signature analysis is useful. This is understood as a diagnostic strategy that recognizes or evaluates the state of a system, a component, a machine or a process based on a characteristic sequence of measured data, the signature. The current signature is automatically compared with a reference signature determined in advance and assigned to a specific desired state. This method was developed and introduced especially for troubleshooting microelectronic circuits and for monitoring of computer systems, ie systems whose • function can be described by a digital signature. In connection with the rapid development of modern image processing methods as well as methods of artificial
• the object of the present invention is to provide an efficient apparatus and method for determining an image of a surface topology.
• At least one beam control in particular a polarization-dependent beam splitter
• the electromagnetic radiation is separated into at least one reference beam and at least one measuring beam.
• a first section of the at least one measuring beam is guided by the beam splitter onto at least one analogously controllable micromirror array, from which a second section of the at least one measuring beam is directed onto the surface of the
• the DUT is reflective.
• the reverse path can also be taken by guiding a first section of the at least one measurement beam from the beam splitter onto the measurement object, from which a second section of the at least one measurement beam is reflected onto the at least one analog-controllable micromirror array.
• a third section of the at least one measurement beam is from the analog controllable micromirror array or the measurement object, depending on which of the two alternatives was selected in
• At least one detector in particular a camera and / or a single detector.
• the at least one detector receives temporally and / or locally resolved patterns of the third portion of the minimum one measurement beam, which can be evaluated as a function of the activation of the analog-controllable micromirror array.
• Measurement object reflected radiation but both the coded in the light phase information, and possibly the polarization information, used for phase contrast enhancement and detects the resulting pattern on the detector and used with the computing means.
• the phase information is influenced in a targeted manner by the analog micromirror array, so that the evaluation of the pattern on the Detector that can calculate information about the shape of the surface topology.
• FIG. 1A shows the micromirror array with 1 million individual mirrors, wherein the chip has a size of 15 ⁇ 40 mm 2 and image repetition rates of more than 1 kHz can be achieved with the aid of electronic control of each individual mirror;
• FIG. 1B Detail of the chip surface with several of the
• Fig. 2 block diagram of the base module for a first
• Fig. 2a block diagram of the base module for a
• FIG. 5a Schematic of a third embodiment of the device according to the invention: Michelson interferometer with an analog micromirror array (microsensing mirror); FIG.
• the embodiments of the device according to the invention described below operate optically non-contact and non-destructive and are primarily intended for online quality monitoring in production processes with short service lives, in particular for fast, quantitative 3D measurement of microstructures and nanostructures (for example on semiconductor wafers).
• a modular opto-micromechanical measuring system which utilizes the full information of an imaging laser beam and is optimally adapted to the test tasks by means of known analog controllable micromirror arrays (see, for example, FIG.
• FIG. 2 A first embodiment (FIG. 2) describes essential elements of the device according to the invention.
• An electromagnetic radiation source 1 which uses a laser with one, two or tunable wavelengths as the light source, generates a beam, which is directed onto a beam splitter 2 after a first polarization optical system 20.
• a first polarization optical system 20 may also an imaging optics 21 may be arranged in the beam path.
• the first polarization optics 20 can be arranged before or after the imaging optics 21.
• the beam splitter 2 divides this beam into one
• a first portion of the measuring beam 41 first falls on a micromirror array 5.
• a second portion of the measuring beam 42 is reflected and then passes through an imaging optics 22 (for example, a
• Zoom optics or a focus optics on a surface of a measurement object 10.
• the imaging optics 22 has the task to reduce the dimensions of the second part of the measuring beam 42 and for
• the rays reflected from the smooth or textured surface topology of the measurement object 10 become the third portion of the measurement beam 43 at the specular
• Fig. 2a an alternative to this embodiment is shown in which the beam path of the measuring beam 41, 42, 43 has been reversed.
• the first section of the measurement beam 41 is directed onto the measurement object 10 by the beam splitter 2.
• the surface of the measuring object 10 reflects the second Section of the measuring beam 42, which is directed to the analog microarray mirror 5. This is driven, as described above, wherein a third portion of the measuring beam 43 is generated, which is passed from the beam splitter 2 in the direction of the detector 6.
• the other components have the corresponding functions as described in FIG. 2.
• a computing means 7 controls the individual mirrors of the micromirror array 5, so that the radiation impinging on the measurement object 10 can be influenced in a targeted manner.
• the radiation directed from the micromirror array 5 onto the measurement object 10 will scan the surface topology, taking into account the known geometry of the micromirror array 5 and the properties (e.g., phase) of that of the
• the signal received by the detector 6 depends on the known position of the micromirrors and the initially unknown surface topology.
• the unknown surface topology can be determined by the computing means 7 on the basis of the known mirror position.
• the determination may e.g. interferometrically by the evaluation of interferences between measuring beams and
• Reference beams are made, which impinge as a pattern on the detector 6.
• other patterns such as e.g. Intensity pattern or phase patterns that are registered by the detector 6 are evaluated by the computing means 7.
• optimal ratios for the interference can be set and thus allow analogous to the ellipsometer to record the intensities as a function of the orientation of the polarization.
• the image repetition rates of 2 kHz currently available for analog-controllable micromirror arrays allow a time resolution in the millisecond range and the smallest mirror sizes of 16 ⁇ 16 ⁇ m 2 with a suitable optical system a spatial resolution in the sub-micron range.
• the use of an analog controllable micromirror array 5 for gray level modulation also allows the positioning of a diffraction figure with an accuracy of a few nanometers. Without translation, scans can be performed in the z and x, y directions using the 3D measuring system. At a working distance of the mirror system to the object surface of about 300 mm, a lateral area of about 150 ⁇ 150 ⁇ m 2 can be detected, assuming a maximum deflection angle of the micromirrors of about 2.9 °.
• either fast shutters are provided at a suitable location, either in the input beam or in front of the detector 6, or a direct modulation of the light source 1 is carried out in synchronization with the mirror movement.
• This basic measurement setup enables adaptive and scanning beam guidance.
• the depth resolution is less than 10 ⁇ m and includes a height range of approximately 4 ⁇ m * 100 / V (V magnification).
• diffraction patterns can be generated on the object surfaces whose reflected images on the detector 6 contain statements about the surface topography of the measurement object 10.
• structures on the surface can be null-converted on the detector 6 into an electronic image resulting from the mirror deflections required for alignment.
• maskless photolithography it is possible in analogy to maskless photolithography to detect structures having the smallest dimensions on the order of about 100-200 nm.
• the inclusion of reflection patterns gives the opportunity to perform a good-bad comparison with reference objects. These include the investigation of structures on chips for microfluidics in the micrometer range as well as metallized hole structures in the submicron range.
• Last but not least, proven techniques such as triangulation, confocal imaging, and interferometry (coherence tomography, white-light interferometry) can be used as a measurement method in the present 3D measurement system.
• the optical and micromechanical components used provide qualitatively new degrees of freedom for optimizing the measurement task to be solved.
• the user can set up detailed measuring concepts according to the requirements of the practical application and implement them easily with the help of a modular basic equipment.
• the various influences such as. the diffraction at the mirror edges and the thermal mirror fluctuations, recorded and realized concrete applications.
• Micro positioning can be equipped to capture larger object areas and to automate the measurement processes.
• FIG. 3 schematically shows a second embodiment in which the interferometric determination of the absolute value of the etching removal and the measurement of etching edge profiles is performed.
• the basic structure corresponds to that of the first embodiment in Fig. 2, wherein for reasons of clarity, the computing means 7 has not been shown.
• here is one data link of the micromirror array 5 and the detector before.
• the light source used here again is a laser 1, but with a linearly polarized beam, the beam of which is guided by a shutter 30 and a rotatably arranged ⁇ / 2 plate 31 (see below for an explanation) into an imaging optical unit 21 which effects beam spreading.
• the beam is then directed onto a polarization-dependent beam splitter 2 (PST), which reflects the s-polarized component of the laser light as the first section of the measuring beam 41 in the direction of the analog micromirror array 5.
• PST polarization-dependent beam splitter 2
• the first or second section of the measuring beam 41, 42 passes through a first ⁇ / 4 plate 32, whereby the polarization direction is rotated by 90 ° and the second section of the measuring beam 42 (ie that of the analog Micromirror array 5 reflected part) is subsequently transmitted by the PST 2.
• Measuring beam 42 a second ⁇ / 4 - plate 33 behind the PST 2, so that with the further rotation of the
• Polarization direction by 90 ° of coming from the measuring object 10 third section of the measuring beam 43 is now reflected at the PST 2.
• the p-polarized component of the laser light is transmitted by the PST 2 and forms the reference beam and interferes with the third portion of the measurement beam 43 reflected by the measurement object 10 before reaching the detector 6.
• the optical components generally include polarization optics for phase contrast measurements. This includes a polarizer, ie a rotatable ⁇ / 2 plate 31, with which the polarization direction of the light can be rotated. The change of the polarization direction is accompanied by a variation of the ratio of reflection to transmission at the beam splitter 2.
• An analyzer 34 located in front of the detector 6 is then adjusted to compensate for this by superposition of measurement and
• Interference pattern has an optimal contrast.
• the detector 6 is generally a photosensitive
• Element It can be used in a one-dimensional or two-dimensional design.
• a photodiode array or a CCD detector can be used.
• a high-speed detector 6 is used when the time correlation method in combination with the analog
• Micro mirror array 5 is used, since the image refresh rate of the analog micromirror array is more than 1 kHz. This also reduces the disturbing influence of vibrations of the object surface and of thermal fluctuations of the micromirrors.
• the correlation function is averaged over an appropriate exposure time, i. .
• Fig. 3 is schematically a surface topology shown on the measuring object 10.
• Such steps may be present, for example, in a structured semiconductor substrate, wherein the device described here is suitable for measuring the structures on the semiconductor substrate.
• FIGS. 3a, 3b and 3c show different beam guides during scanning of the surface topology.
• the beam focus z o in the axial direction, but also the focus position in the lateral direction can be varied and thus used for scanning.
• the working distance of the micromirror array 5 and the measuring object 10 is 300 mm and 50 micromirrors of the size 16 ⁇ 16 ⁇ m 2 are used.
• the absolute object position in the axial direction can be determined with this method.
• appropriate algorithms are used for the analysis and rapid evaluation of the correlation functions.
• FIGS. 4a, 4b show different correlation functions.
• the intersection points of the different heights of the measurement object 10 are characteristic measures for the lengths of the respective interfering rays.
• information from the correlation functions K (xi, X 2 , ⁇ , z) can be utilized for a fixed position of the object surface.
• the absolute position of the surface topology can be determined within the framework of fast numerical calculation methods.
• An alternative method results from the use of light sources having two or more wavelengths. As a result, the resolution of the measurement method and the robustness of the evaluation of the interference images can be improved.
• Correlation curves result i. the measurement signal is determined by the height, i. the surface topology of the measuring object 10, influenced.
• arrays 5 with analog-controllable micromirrors makes it possible to produce diffraction structures, as is exploited by Micronics for maskless lithography (see also second exemplary embodiment).
• analog-controllable micromirrors makes it possible to produce diffraction structures, as is exploited by Micronics for maskless lithography (see also second exemplary embodiment).
• Micro-mirror arrays 5, the embodiment of FIG. 3, the position of a figure (such as an edge or a point) with an interferometric method in the range of a few nanometers can be precisely determined.
• linear or areal different optical path length differences are generated with the analog micromirror array 5, so that the 3D measurement of the surface of a test object 10 can be done simultaneously, ie without screening.
• structures of the order of magnitude of 200 nm are detected with a time constant of a few milliseconds.
• FIG. 5b schematically shows a Michelson interferometer with micromirrors as a third exemplary embodiment. The principle is illustrated with reference to FIG. 5a.
• the third embodiment comprises a light source 1 emitting coherent monochromatic light, e.g. a laser is.
• the phase-shifting element used is a microsensing mirror 5a (FIG. 5 a) or a mirrored mirror array 5 b (FIG. 5 b) produced by methods of microsystem technology.
• the latter is a matrix arrangement of individual, individually and analogically controllable Mikrosenkspiegel.
• the Senkspiegelarray 5b is a matrix arrangement of individual, individually and analog controllable Mikrosenkspiegel.
• a beam splitter 2 splits the laser beam coming from the light source 1 into a reference beam 3 and a measuring beam 4.
• the reference beam 3 is reflected by the beam splitter 2 and deflected into the one interferometer arm in the direction of the phase-shifting array 5a, 5b. After the reflection on the microsensing mirror 5a or on the Senkspiegelarray 5b of the reference beam 3 passes through the interferometer back in the beam splitter 2.
• the deflection .DELTA.z of the micromirror 5a or the local deflection .DELTA.zi the pixels (Einzelensenkspiegelelement) of the Senkspiegelarrays 5b at the time of reflection of the reference beam 3 this is impressed by the change in the optical path length a time-varying phase.
• the measuring beam 4 is first transmitted by the beam splitter 2. It then passes through the second interferometer arm in the direction of the test object 10 to be examined, is reflected on its surface and passes through the interferometer arm back in the direction
• the surface topology of the measuring object 10 causes a modification of the optical path length, so that the measuring beam 4 thereby undergoes a phase change.
• the reference beam 3 is now transmitted, the measuring beam 4 is reflected and then both are superimposed to form a detector beam 50.
• the information about the time-dependent, i. the deflection position .DELTA.z of the microsensing mirror 5a or the pixels of the tilting mirror array 5b present at the time t is coded, whereas the phase position of the measuring beam 4 contains details of the depth profile of the sample 10. According to the relative phase angle of both partial beams to each other in the detector arm 50 constructive or destructive interference.
• a photosensitive detector 6 At the end of the detector arm is a photosensitive detector 6, which can be designed as a photodiode array or CCD detector in one or two dimensions.
• the evaluation of the signal generated by the detector 6 and correlated with the phase-dependent intensity of the detector beam 50 supplies the searched information about the surface topology of the measurement object 10.
• Senkspiegelarrays 5b allows the spatially resolved measurement of the surface topology of a sample 10 with a Michelson - interferometer.
• the lateral resolution is determined by the size and spacing of the individual micromirrors.
• conventional interferometers which have a low lateral spatial resolution, since the same for measuring the depth position generated in the detector plane Evaluate interference pattern and this requires larger contiguous pixel areas of the detector array, allows the use of a micro-mirror 5a or a Mikrosenkspiegelarrays 5b a significant increase in the lateral spatial resolution.
• the temporal variation of the deflection .DELTA.z of the microsensing mirror and the resulting local phase modulation of the reference beam 3 causes a time-varying intensity or interference signal for each individual element of the photodetector 6, which information about the local height information of the
• DUT 10 includes. By apriori knowledge of the existing for each detector element local phase modulation of the reference steel 3 can be calculated locally for each detector element, a height value of the measurement object 10, which ultimately leads to a significant increase in the lateral spatial resolution.
• Micro-mirrors are used to detect the position of a figure, such as an edge or a point on the surface of the sample 10. Such an edge, for example, causes a phase jump in the interference pattern on the detector 6. By zeroing on the detector 6 results in the corresponding mirror deflections corresponding phase change and thus in addition to the position and the height of the edge.
• Mikrorosenkaptarray 5b consisting of individually analogously controllable individual countersinks, based on a Kompensationsmesshin (i.e., zeroing) determine the 3D surface topography of a measuring object 10.
• the zero balance is performed on the basis of the interference generated by measuring and reference beam in the detector plane
• the specific deflection of the microsphere mirror array ⁇ zi (Xi, yi) required for zero adjustment for each individual mirror is a direct measure of the surface topography of the measurement object.
• the micromirror array 5 can be controlled so that exactly this homogeneous intensity distribution is achieved on the detector 6.
• FIGS. 6a to 6e A fourth embodiment with the achievable results is described in FIGS. 6a to 6e.
• This fourth exemplary embodiment relates to the combination of a surface triangulation measurement system with an integrated analog controllable micromirror array 5 for measuring the 3D surface topography of a measurement object 10.
• the physical measurement principle is based on the triangulation and the use of fringe projection techniques such as the phase shift and gray code method.
• the device has a projector unit that generates structured striped patterns (see FIG. 6b) and projects them onto the measurement object 10, as well as a camera system 6 arranged at the triangulation angle ⁇ as a detector for recording the up-projected strip structures 11 interacting with the topography of the measurement object 10 projection pattern.
• the measuring beam 4 is not brought to interference with a reference beam 3, but the surface topology is detected by means of the recorded projection pattern in response to the control of the micromirror array.
• FIG. 6c the individual components of the embodiment of a surface triangulation measuring system with integrated, analog controllable micromirror array 10 are shown schematically.
• the projection system has a monochromatic or polychromatic light source 1 whose radiation is directed onto a beam splitter 2.
• the device has an analog controllable micromirror array 5 and a first imaging optics 21.
• the light emitted by the light source 1 strikes a beam splitter 2, is reflected by it and impinges on an analog controllable micromirror array 5.
• the areal analogously modulated by the micromirror array 5 and then reflected measuring beam 4 is subsequently transmitted by the beam splitter 2 and an imaging optics 21 on the measurement object 10 is projected.
• an imaging optics 21 on the measurement object 10 is projected.
• Micromirror arrays at the time ti a stripe pattern 11 with a defined lattice constant and spatial phase position is projected onto the measuring object 10.
• the image of the optical interaction of the surface topography of the measuring object 10 and the projected fringe pattern 11 is determined by means of the
• the camera system 6 (see Fig. 6a) recorded.
• the camera system 6 has a second imaging optical system 24.
• the Camera system a photosensitive detector array, which may be in particular a photodiode, CCD or CMOS area detector.
• FIG. 6d shows strip structures with varied intensity produced in the projection plane by means of an analog controllably controlled micromirror array 5, the inserted image corresponding to the one-dimensional intensity profile of the projected, analogously modulated strip structures.
• a sublattice can be generated in the projection plane so that the projected-on grating structures can be positioned with much greater accuracy of the phase position since, compared to the prior art (eg DMD), the resolution of the Projected grid structures no longer follow directly from the magnification of the projection optics and the pixel pitch • of the micromirror array.
• the fine positioning of a projected grid structure in the projection plane which is based on the analog control of the micromirror array and the subgrid generated thereby, is illustrated in FIG. 6e.
• FIG. 6e shows the deflection state of a row of micromirror arrays 5 (FIG. 6e, bottom) consisting of 8 individual mirrors and the intensity profile generated in the projection plane (FIG. 6e, top).
• the three mirrors arranged in the middle are maximum and the
• Edge mirror not deflected The third mirror from the left, however, is deflected analogously with the deflection a 3 .
• the position of the stripe pattern projected in the projection plane is shifted (see Figure 6e, top), with the
• Position or phase angle of the intensity pattern is positioned with high precision in the projection plane.
• analog-controllable micromirror arrays 5 positioning accuracies of the projected intensity structures in the projection plane of less than 10 nm were achieved, so that by using analog-controllable micromirror arrays in surface triangulation measurement systems for Strip projection can achieve significantly higher position or phase accuracy of the required stripe patterns than is possible in the prior art (eg with DMDs).
• analog-controllable micromirror arrays 5 in the projection system, a significant reduction in the measurement time is achieved, since, in contrast to the DMD, direct grayscale modulation directly produces a strip grating 11 with harmonic (cos or sin-shaped).
• Intensity distribution can be projected onto the measuring object 10.
• Inhomogeneities of the intensity distribution recorded by the camera system or detector 6, which are caused by the local variation of the optical surface properties of the measurement object, can be compensated adaptively by the analog-controllable micromirror array 5.
• the image of the stripe pattern 11 interacting with the measuring object 10 received by the camera system 6 can be locally adapted to the dynamic range of the area detector 6. This causes an increase in the signal / noise ratio and the measurement accuracy and increases the number of measurable object points.
• the object of the invention is a novel method and device system for rapid, quantitative 2D and / or 3D measurement of surface topographies of a measurement object 10.
• embodiments primarily based on the 3D investigation of micro and nano structures (eg for online evaluation of etch removal and etching edges or for error inspection periodic
• the in e.g. One embodiment non-contact and non-destructive 3D online measuring system is specifically designed for quality control in manufacturing processes with short tool life.
• the invention relates to a modular opto-micromechanical measuring system (see Fig. 2 to 4), which exploits the full information of the imaging laser beam and allows the use of analog micromirror arrays 5 time and place correlated measurement methods and thereby optimally adapted to the respective füraufgäbe can.
• the new measuring system has the possibilities and thus the advantage of integrating already established methods such as triangulation, confocal microscopy or interferometry into the measuring concepts and at the same time current developments in the field of nanometric metrology, such as e.g. the scatterometry, for a fast and reliable optical signature analysis.
• the opto-micromechanical measuring system is significantly more efficient than existing optical methods and also opens up new fields of application.
• Analog micromirror arrays 5 allow you to control each individual mirror, thus reducing the angles of the mirrors individual beams or their phase to be flexibly adapted to the measuring task.
• the distance from measurement object 10 to micromirror array 5 can be selected in the order of about 300 mm. Translations and rotation of the sample or measuring system are not required.
• Combination with an analog micromirror array 5 with individually activatable rockers or countersinks represents a novel system for the characterization of three-dimensional microscopic surfaces. Thus, interference, polarization and / or diffraction effects can be exploited.
• gray value modulations can be used which allow an alignment of diffraction gratings or edges with an accuracy of approximately 5 nm.
• Intensity pattern can be mapped, since each mirror only two States, while the Fraunhofer IPMS developed micromirror arrays 5 are analog controlled.
• the generation of gray levels is possible only with time division multiplexing and thus relatively slow.
• the analog controllable micromirror array 5 of the Fraunhofer IPMS allows the definition of sublattices due to the analog modulation and the associated simple generation of grayscale images.
• the image refresh rate of the analog micromirror array 5 in generating gray levels is approximately equal to that of the DMD in the formation of black-and-white images.
• etching removal etch rate determination
• corresponding etching structures such as etching edges, perforated or trapezoidal structures
• sputter structures of metallic, oxidic and nitridic layers can be characterized with the measuring system. This covers a wide range of applications in microsystems technology, electronics and nanotechnology.
• microstructures such as galvanic molding, hot stamping and injection molding.
• the measuring method allows a good-bad comparison of microstructures, such as e.g. Micropipes and MEMS for microfluidics.

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Cited By (6)

Citations (4)

• 2005
  • 2005-08-25 WO PCT/DE2005/001509 patent/WO2006021205A1/de active Application Filing
  • 2005-08-25 DE DE112005002106T patent/DE112005002106A5/de not_active Withdrawn

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