WO2006014574A2 - Metal-insulator varactor devices - Google Patents
Metal-insulator varactor devices Download PDFInfo
- Publication number
- WO2006014574A2 WO2006014574A2 PCT/US2005/024207 US2005024207W WO2006014574A2 WO 2006014574 A2 WO2006014574 A2 WO 2006014574A2 US 2005024207 W US2005024207 W US 2005024207W WO 2006014574 A2 WO2006014574 A2 WO 2006014574A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulator
- layer
- conducting
- given voltage
- varactor
- Prior art date
Links
- 239000012212 insulator Substances 0.000 title claims abstract description 79
- 239000000463 material Substances 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 19
- 230000005641 tunneling Effects 0.000 claims description 19
- 238000013459 approach Methods 0.000 claims description 6
- 239000012774 insulation material Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 32
- 239000002184 metal Substances 0.000 description 29
- 229910052751 metal Inorganic materials 0.000 description 29
- 238000010586 diagram Methods 0.000 description 12
- 238000013461 design Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 230000001419 dependent effect Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000011176 pooling Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0805—Capacitors only
- H01L27/0808—Varactor diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05769417A EP1779440A4 (en) | 2004-07-08 | 2005-07-07 | Metal-insulator varactor devices |
JP2007520523A JP2008506265A (en) | 2004-07-08 | 2005-07-08 | Metal-insulator varactor device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58649304P | 2004-07-08 | 2004-07-08 | |
US60/586,493 | 2004-07-08 | ||
US11/113,587 US7173275B2 (en) | 2001-05-21 | 2005-04-25 | Thin-film transistors based on tunneling structures and applications |
US11/113,587 | 2005-04-25 |
Publications (4)
Publication Number | Publication Date |
---|---|
WO2006014574A2 true WO2006014574A2 (en) | 2006-02-09 |
WO2006014574A9 WO2006014574A9 (en) | 2006-03-30 |
WO2006014574A3 WO2006014574A3 (en) | 2007-01-25 |
WO2006014574A8 WO2006014574A8 (en) | 2007-04-05 |
Family
ID=35787663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/024207 WO2006014574A2 (en) | 2004-07-08 | 2005-07-07 | Metal-insulator varactor devices |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1779440A4 (en) |
JP (1) | JP2008506265A (en) |
KR (1) | KR20070083457A (en) |
WO (1) | WO2006014574A2 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3613011A (en) * | 1969-01-08 | 1971-10-12 | Gen Motors Corp | Varactor tone control apparatus |
US4510516A (en) * | 1982-02-01 | 1985-04-09 | Bartelink Dirk J | Three-electrode MOS electron device |
US5019530A (en) * | 1990-04-20 | 1991-05-28 | International Business Machines Corporation | Method of making metal-insulator-metal junction structures with adjustable barrier heights |
US5895934A (en) * | 1997-08-13 | 1999-04-20 | The United States Of America As Represented By The Secretary Of The Army | Negative differential resistance device based on tunneling through microclusters, and method therefor |
US6534784B2 (en) * | 2001-05-21 | 2003-03-18 | The Regents Of The University Of Colorado | Metal-oxide electron tunneling device for solar energy conversion |
US6944052B2 (en) * | 2002-11-26 | 2005-09-13 | Freescale Semiconductor, Inc. | Magnetoresistive random access memory (MRAM) cell having a diode with asymmetrical characteristics |
-
2005
- 2005-07-07 EP EP05769417A patent/EP1779440A4/en not_active Withdrawn
- 2005-07-07 KR KR1020077000863A patent/KR20070083457A/en not_active Application Discontinuation
- 2005-07-07 WO PCT/US2005/024207 patent/WO2006014574A2/en active Search and Examination
- 2005-07-08 JP JP2007520523A patent/JP2008506265A/en active Pending
Non-Patent Citations (1)
Title |
---|
See references of EP1779440A4 * |
Also Published As
Publication number | Publication date |
---|---|
JP2008506265A (en) | 2008-02-28 |
EP1779440A4 (en) | 2009-04-15 |
EP1779440A2 (en) | 2007-05-02 |
WO2006014574A3 (en) | 2007-01-25 |
WO2006014574A8 (en) | 2007-04-05 |
KR20070083457A (en) | 2007-08-24 |
WO2006014574A9 (en) | 2006-03-30 |
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