WO2005123227A2 - Procede de manipulation de particules microscopiques et d’analyse de la composition de celles-ci - Google Patents

Procede de manipulation de particules microscopiques et d’analyse de la composition de celles-ci Download PDF

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Publication number
WO2005123227A2
WO2005123227A2 PCT/US2004/018206 US2004018206W WO2005123227A2 WO 2005123227 A2 WO2005123227 A2 WO 2005123227A2 US 2004018206 W US2004018206 W US 2004018206W WO 2005123227 A2 WO2005123227 A2 WO 2005123227A2
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WO
WIPO (PCT)
Prior art keywords
particle
sample surface
probe
energetic
analysis
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Application number
PCT/US2004/018206
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English (en)
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WO2005123227A3 (fr
Inventor
Thomas M. Moore
John M. Anthony
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Omniprobe, Inc.
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Publication date
Application filed by Omniprobe, Inc. filed Critical Omniprobe, Inc.
Priority to EP04754729A priority Critical patent/EP1754049A2/fr
Priority to CNA2004800379489A priority patent/CN1977159A/zh
Priority to CA002543396A priority patent/CA2543396A1/fr
Priority to PCT/US2004/018206 priority patent/WO2005123227A2/fr
Publication of WO2005123227A2 publication Critical patent/WO2005123227A2/fr
Publication of WO2005123227A3 publication Critical patent/WO2005123227A3/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/2204—Specimen supports therefor; Sample conveying means therefore
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/32—Micromanipulators structurally combined with microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Definitions

  • the invention relates to techniques for removing and analyzing microscopic particles from a sample surface, particularly from semiconductor samples. BACKGROUND In the semiconductor industry, unexpected particles due to contamination will cause yield loss during the manufacturing process. Since a major focus of this industry is aggressive reduction in feature size for pattern line widths, the minimum size of particles that can cause performance loss also decreases rapidly. A reasonable estimate for a "killer defect" size is that greater than one-third the size of the smallest feature on the semiconductor wafer.
  • the primary beam interacts with atoms in this volume, it generates low energy Auger electrons and X-rays that are characteristic of the elements involved.
  • the particular X-ray line generated will depend on the atomic number of the element, the energy of the electron during the interaction, and other factors.
  • EDS Energy-dispersive X-ray Spectrophotometry
  • the energy of the electron beam must be large enough to generate inner-shell X-rays from all possible relevant elements, which, for semiconductor applications, may include elements of high atomic number such as tungsten. Unfortunately, this energy results in a penetration depth that may be much larger than the particle of interest, resulting in X-ray generation from the sample surface.
  • the resolution of these detectors is governed by the statistics of the electron-hole generation process, and reducing the energy of the detected X-ray often leads to ambiguous identification of the element of interest.
  • X-ray micro-calorimeter methods have been used to detect these weak X-ray signals, using heat transferred to the detector rather than the generation of electron-hole pairs. This process does allow measurement of small X-ray energies, but micro-calorimeter instruments are expensive, have complicated cooling requirements, and are slow compared to other methods. Also, the electron beam must be kept smaller than the smallest dimension of the particle of interest, rendering the method impractical for small, unsymmetrical particles.
  • Scanning Auger microprobe analysis also uses an electron beam to irradiate a particle of interest, but rather than detecting any X-rays generated it focuses on the detection of Auger electrons ejected from the atoms of the material.
  • Auger electrons come from outer shells and have relatively low energies.
  • the Auger electron energies from a material produce a pattern that is characteristic of each element in the material, and the shape and exact energy of the Auger transitions provide information on the chemical bonding of the elements in the material (such as, phase or compound information).
  • the escape depth of these electrons is quite small (a few nm), so Auger analysis focuses mainly on the surface of a sample. This is an advantage for the analysis of small diameter particles ( ⁇ 10 nm).
  • TEM can often be used for analysis of particles in or on surfaces. There are a variety of methods for isolating the particle for analysis, including replication, lift-out or cross sectioning the area of interest. These methods all destroy the sample surface and must be done off-line, thereby increasing cost and cycle time.
  • This disclosure describes a novel method for removing a particle of interest from a sample surface, transporting that particle to a second sample surface with a controlled X-ray or Auger background, and performing electron beam-induced X-ray analysis or Auger electron analysis there, using any of the methods discussed above. This eliminates the requirement that the analyzing technique have high spatial resolution, although a technique with high spatial resolution, such as EDS analysis in the SEM and SAM analysis, is generally preferred.
  • XPS X-ray Photoelectron Spectroscopy
  • XRF X-ray Fluorescence analysis
  • the proposed method for particle manipulation and EDS X-ray analysis can be done in-line on existing wafer-manufacturing tools.
  • An in-line procedure using existing manufacturing and inspection tools represents a significant reduction in cycle time for contamination removal.
  • SEM is a routine method for wafer inspection, and analytical methods using the electron beam in an SEM system provide a substantial throughput advantage over the off-line strategies.
  • FIG. 1 shows the steps of attaching a particle to a micro-manipulator probe and removing the particle to a second surface for analysis.
  • Figure 2 shows three other methods of attaching a particle to a micro- manipulator probe.
  • Figure 3 shows the process of modifying electrostatic forces by bombardment with polarizable molecules.
  • Figure 4 shows the method of simultaneously viewing a particle and modifying the charge state of the particle.
  • Figure 5 shows several methods for fixing a particle to a second surface for analysis.
  • Figure 6 shows the analysis of a particle while the particle is fixed to the tip of a micro-manipulator probe.
  • Figure 7 shows the process of analyzing the composition of a particle removed to a second surface for analysis.
  • ⁇ SUMMARY We disclose a method for analyzing the composition of a microscopic particle resting on a first sample surface. Usually, the particle will be a contaminant in a semiconductor processing system, although the method is not limited to those circumstances.
  • the method comprises positioning a micro-manipulator probe near the particle; attaching the particle to the probe; moving the probe and the attached particle away from the first sample surface; positioning the particle on a second sample surface; and, analyzing the composition of the particle on the second sample surface by energy- dispersive X-ray analysis, Auger microprobe analysis or any other suitable analytical technique.
  • the second surface has a reduced or non-interfering background signal during analysis, relative to the background signal of the first surface. (We call such a reduced or non-interfering background signal a "controlled" background signal in the claims.) We also disclose methods for adjusting the electrostatic forces and DC potentials between the probe, the particle, and the sample surfaces to effect removal of the particle, and its transfer and relocation to the second sample surface.
  • Adjustment of the electrostatic forces may include locally adjusting the energy or intensity (intensity means beam current for electron and ion beams) of an electron beam, ion beam or photon beam incident on the individual components of the sample system, which includes the probe tip, particle and first sample surface, to create an electrostatic attraction between the particle and probe tip, or an electrostatic repulsion between the particle and the first sample surface. This procedure is reversed to transfer the particle from the probe tip to the second sample surface.
  • the second sample surface may be the probe tip itself. In this case the probe tip is composed of a controlled background material.
  • the FIB instrument may be either a single-beam model, or a dual-beam (both SEM and ion beam) model.
  • Typical FIB instruments are those manufactured by FEI Company of Hillsboro, Oregon, as models 200, 235, 820, 830, or 835.
  • the probe (120) referred to below is a component of a micro-manipulator tool attached to the FIB instrument with vacuum feed-through.
  • a typical such micro-manipulator tool is the Model 100 manufactured by Omniprobe, Inc. of Dallas, Texas.
  • Typical SAM instruments include the JAMP-7810 and JAMP-7830F manufactured by JEOL USA, Inc. of Peabody, Massachusetts.
  • Figure 1 depicts the general setup for particle manipulation and analysis. Fig.
  • FIG. 1 A shows a particle (100) of interest resting on a first sample surface (110).
  • a micro- manipulator probe (120) is positioned near the particle (100).
  • the probe tip can be electrostatically charged relative to the particle and the first sample surface.
  • a voltage source (130) may be connected between the probe (120) and the first sample surface (110).
  • the local electrostatic charge on the particle can be modified by the irradiation of the particle by a charged particle beam.
  • IB through ID show, respectively, the irradiation of the particle (100) and first sample surface (110) by photons or a charged-particle beam (140) to cause attachment of the particle (100) to the probe (120), the removal of the probe (120) and attached particle (100) from the first sample surface (110), and the deposition of the particle (100) on a second sample surface (150) for analysis.
  • the drawings are not to scale. Attaching the particle to the probe Strong electrostatic forces exist on particles in a vacuum. The presence of static charges on the particle (100) and the probe (120) leads to the creation of image charges on the opposite surfaces. These image charges create forces that are proportional to the area exposed and inversely proportional to the distance between the objects.
  • Reducing or increasing the exposed area will therefore either reduce or increase the force acting on the particle (100), and the resultant adhesion between probe (120) and particle (100).
  • This can be used as a straightforward method to remove particles of interest from the sample, using either a conducting or insulating probe (120).
  • Conducting probes allow more versatility through the introduction of static or time varying voltages or electrostatic charges to the probe (120) from a voltage or electrostatic charge source (130), as shown generally in Fig. 1A.
  • the shape of the tip of the probe (120) will also influence the electric fields at the tip. Static electric charges on a blunt tip will exert stronger influence on a particle in line with the tip than a sharply pointed tip.
  • the probe (120) can be moved into proximity to the particle (100) while imaging with, for example, the electron beam (140) available in the FIB instrument, as shown in Fig. IB.
  • the electron beam will also affect the charge distribution in the surface-particle-probe system, and thus can assist attraction of the particle (100) to the probe (120). An application of this effect is discussed below.
  • the electron beam (140) depicted in Fig. IB and other drawings should be understood to also be a charged-particle beam or photon beam generally, and may, for example, consist of an ion beam.
  • the adjustment of electrostatic forces on the system may comprise adjusting the energy of an electron beam (140) incident on the particle (100), probe (120), and first sample surface (110) to create a relative electrostatic attraction between the particle (100) and the probe (120), and a relative electrostatic repulsion between the particle (100) and the first sample surface (110).
  • the process may be assisted by a voltage source (130) connected between the first sample surface (110) and the probe (120).
  • the impinging beam (140) could also be a beam of photons, having sufficient energy to release photoelectrons, which thus change the charge distribution in the system and the electrostatic forces involved.
  • the preferred embodiment may also be carried out using an adhesive (160) on the probe (120), as shown in Fig. 2A.
  • An acceptable adhesive (160) could be any having a low vapor pressure, such as vacuum grease, low melting point waxes, or other low vapor pressure glues. In this case, the forces of adhesion simply capture the particle (100), notwithstanding existing electrostatic forces.
  • tweezers (170) connected to the probe (120) grasp the particle (100) and remove it from the first sample surface (110).
  • Suitable device having tweezers (170) or similar grippers are those manufactured by MEMS Precision Instruments in Berkeley, CA.
  • the probe (120) can touch the particle (100), but this is not necessary in many cases, as the particle (100) will jump to the probe (120) due to the electrostatic attraction.
  • the electrostatic field is controlled by surface area and therefore enhanced with a blunt tip on the probe (120), or the blunt side of a particle (100) or the probe (120), whereas DC potentials are enhanced by a pointed tip that concentrates the field lines. Figs.
  • FIGS. 2C and 2D show examples of strategies for particle (100) attachment and transfer by controlling the surface area of the particle (100) exposed to the manipulator, by applying the tip (125) of the probe (120) and the side (135) of the probe (120) to the particle to achieve the desired movement of the particle (100).
  • An additional method of adjusting the electrostatic fields in the particle-probe- surface system for both attaching and removing the particle (100) comprises depositing a conductive material on the first sample surface (110) or second sample surface (150), as the case may be, to distribute and modify the electrostatic charge on the surface at the location of the particle to create either an attractive or a repulsive force on the particle, as desired.
  • Figure 3 A depicts the deposit of polarizable molecules (250), such as water, on the sample surface (110).
  • Figure 3B depicts the deposit of a conductive film (255) by evaporation of a source.
  • Figure 3C depicts a directed jet (240) of gas (245) applied to a surface (110) having a particle (100) resting upon the surface (110).
  • the gas (245) is decomposed by an energetic beam (140), which may be an electron beam an ion beam or photons, such as from a laser.
  • An energetic beam 140
  • a method of simultaneously viewing a particle (100) in a vacuum system and adjusting the charge state of the particle is shown in Figure 4.
  • the SEM beam and the ion beam in typical FIB instruments are scanned over the object of interest in a raster pattern (260). This scanning, synchronized with emitted secondary electrons, generates the electrical signal that is displayed as an image to the operator of the instrument. Since the scanning beam necessarily comprises charged particles, and causes charged particles, such as secondary electrons, to be emitted from the sample, it may itself be used to change the charge state of the particle (100).
  • FIB instruments typically use digital scan generators that digitally increment the position of the beam spot through a raster pattern, one line at a time, often reversing direction between lines to eliminate the flyback after each line that characterizes traditional analog scanners.
  • the operator can determine the dwell time on a per-pixel basis.
  • a box covering the particle or the exact outline shape of the particle
  • Any dwell time can be set up to the maximum time allowed by the line rate to avoid image distortion in a single scan. It is also possible to alternately scan around the box, and then scan in the box with different parameters, and do this so quickly that the human eye would not see an interruption. Fig.
  • FIG. 4 shows the steps of rastering a primary electron beam (270) over a field of view that includes the particle (100); generating and detecting secondary electrons (280) that are synchronized with the primary beam (270); and modifying the raster scan pattern (260) to specify dwell time and location for specific pixels in the field of the raster (260) associated with the particle (100) to be incorporated and added to the standard raster pattern.
  • the particle (100) then experiences an excess or a reduction of negative charge relative to the sample surface (150) under the rest of the raster (260).
  • the electrostatic field between the particle (100) and the probe (120) and sample surface (150) can be adjusted to achieve attraction or repulsion, as desired.
  • the raster may be generated by ion beams as well, and in the same fashion, by a scanning laser. Transferring the particle
  • the probe (120) can be moved within the vacuum environment either manually or via automated probe (120) hardware.
  • An alternative method would be to raise or retract the probe (120) slightly and move the sample stage to bring a controlled background material under the probe (120).
  • the particle (100) can also be transferred by the probe (120) to the second sample surface (150) consisting substantially of a controlled background material having a low background or non-interfering background signal.
  • low atomic-number materials such as carbon or beryllium produce low-energy X-rays that will not interfere with most non-organic particle-analysis processes.
  • An atomic number less than or equal to 12 is preferred.
  • Organic particles will obviously require a non- organic background material.
  • the low-background materials for the second sample surface (150) include photoresist, carbon planchette, beryllium foil, conductive carbon-based paste (colloidal graphite suspensions), polymer membranes, or carbon nanotube needles. Any material whose X-ray background does not interfere with the typical materials in the fabrication process may be acceptable for the second sample surface (150). In some cases, the second sample surface (150) may be a different part of the first sample surface (110).
  • the material of the second sample surface (150) should have a background signal different that the signals expected from the particle (100). Care must be taken that the choice of the second sample surface (150) does not obscure possible signals from contaminants from outside the fabrication facility, such as impurities in incoming gases or chemicals.
  • the second surface should consist of low Auger electron background or non-interfering Auger electron background. The composition of the second surface should be consistent to a depth greater than that of any depth profiling that will be performed on the particle.
  • the second surface material pre- sputtering of the second surface, before transfer of the particle will remove any native surface coating (mostly carbon and oxygen) and simplify the analysis.
  • This pre- sputtering can be performed, for example, with the depth profiling ion source in the Auger, or the ion beam in the FIB. That the composition of the second surface is well known eliminates the need to acquire background analyses which improves throughput.
  • Figure 5 shows several methods for transferring the attached particle (100) from the probe (120) to the second sample surface (150) for the analysis. Fig.
  • FIG. 5A shows the particle suspended on an underlying framework (190), thin relative to the penetration depth of the analysis beam (140).
  • the framework (190) would typically be a TEM grid, possibly having a polymer membrane (195) such as FORMVAR across the grid openings.
  • Fig. 5B shows the particle attached to the second sample surface (150) by an adhesive (200) on the second sample surface (150).
  • Fig. 5C shows a second sample surface (150) comprising a background material (210) having a low modulus of elasticity, such as vacuum grease, low-melting point wax, or low-modulus polymer. In this case the particle (100) can be pushed into the low-modulus material (210) and stuck there.
  • FIG. 5D shows a wrinkled surface (220) on an insulating second sample surface (150).
  • the wrinkled surface (220) allows an increased area of contact between the particle (100) and the second sample surface (150), thus changing the electrostatic forces between them.
  • Fig. 5E shows an electrified pattern (230) written on the second sample surface (150) by the charged-particle beam (140). The electrostatic field of such a pattern can assist in the transfer of the particle from the probe (120) to the second sample surface (150).
  • Figure 5F shows a porous second sample surface (150) having holes or pores (290).
  • Such surfaces may be micro-pore filters, such as the MICROPORE series of filters manufactured by 3M Corporation of St.
  • the methods described in the previous section for adjusting the electrostatic forces in the particle-probe-sample surface system for attaching the particle (100) to the probe (120) can also be used to remove the particle (100) from the probe (120) and attach it to the second sample surface (150).
  • the voltage or charge source (130) may generate a rapid transient or resonant phenomenon, for example, by rapidly switching stored negative charge from a capacitor through the probe (120), or by a time- varying voltage, such as a square wave or pulse, applied to the probe (120) from the source (130).
  • Analyzing the particle X-ray analysis or Auger analysis can be performed with the particle (100) directly on the probe tip (125), as shown in Fig. 6.
  • Example destructive methods might include inserting the probe (120) in a plasma cleaner of some kind, rubbing the particle (100) off on a mechanical transfer structure such as a V-groove, irradiating the probe optically either in vacuum or after exposure to the atmosphere, or ablating the particle (100).
  • the particle (100) will be analyzed on a second sample surface (150), as depicted generally in Fig. 7, where the particle (100) is irradiated with a charged-particle analysis beam (140), causing it to emit characteristic Auger electrons or X-rays (180) for compositional analysis, by any of the methods described in the Background section of this application.
  • the second sample (150) surface may be the probe tip (135) itself.
  • the probe tip (135) is composed of a controlled background material.
  • the surface of the probe tip (135) can be ion milled prior to attachment of the particle (100) to the tip (135) to reduce signals from the native surface coating and debris on the probe tip (135) surface.

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  • Analytical Chemistry (AREA)
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Abstract

Il est prévu un procédé d’analyse de la composition d’une particule microscopique (100) reposant sur une première surface échantillon (110). Le procédé consiste à positionner une sonde de micromanipulateur (120) près de la particule (100); à fixer la particule (100) à la sonde (120); à éloigner la sonde (120) et la particule fixée (100) de la première surface échantillon (110); à positionner la particule (100) sur une seconde surface échantillon (150); et à analyser la composition de la particule (100) sur la seconde surface échantillon (150) par analyse aux rayons X à dispersion d’énergie ou détection d’électrons d’Auger. La seconde surface (150) a un signal de fond réduit ou non interférant pendant l’analyse par rapport au signal de fond de la première surface (110). Il est également prévu des procédés de réglage des forces électrostatiques et des potentiels CC entre la sonde (120), la particule (100) et les surfaces échantillons (110, 150) pour enlever la particule (100), puis la transférer et la repositionner sur la seconde surface échantillon (150).
PCT/US2004/018206 2004-06-08 2004-06-08 Procede de manipulation de particules microscopiques et d’analyse de la composition de celles-ci WO2005123227A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP04754729A EP1754049A2 (fr) 2004-06-08 2004-06-08 Procede de manipulation de particules microscopiques et d"analyse de la composition de celles-ci
CNA2004800379489A CN1977159A (zh) 2004-06-08 2004-06-08 处理微小颗粒并分析其成分的方法
CA002543396A CA2543396A1 (fr) 2004-06-08 2004-06-08 Procede de manipulation de particules microscopiques et d'analyse de la composition de celles-ci
PCT/US2004/018206 WO2005123227A2 (fr) 2004-06-08 2004-06-08 Procede de manipulation de particules microscopiques et d’analyse de la composition de celles-ci

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/018206 WO2005123227A2 (fr) 2004-06-08 2004-06-08 Procede de manipulation de particules microscopiques et d’analyse de la composition de celles-ci

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WO2005123227A2 true WO2005123227A2 (fr) 2005-12-29
WO2005123227A3 WO2005123227A3 (fr) 2006-12-14

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EP (1) EP1754049A2 (fr)
CN (1) CN1977159A (fr)
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Cited By (4)

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WO2008037305A1 (fr) * 2006-09-25 2008-04-03 Firma Dr.Roland Kilper dispositif et procédé de COLLECTe, de transport et de conservation d'échantillons microscopiques
EP1953789A1 (fr) * 2007-02-05 2008-08-06 FEI Company Procédé pour amincir un échantillon et support de l'échantillon pour effectuer ce procédé
JP2013050665A (ja) * 2011-08-31 2013-03-14 National Univ Corp Shizuoka Univ 微小付着物剥離システムおよび微小付着物剥離方法
CN112180124A (zh) * 2020-08-31 2021-01-05 上海交通大学 一种原子力显微镜用亚微米探针的制备方法

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CN104236978B (zh) * 2014-09-30 2017-03-22 中国原子能科学研究院 一种测量单微粒中铀同位素比的方法
CN105797867B (zh) * 2016-05-09 2018-05-04 长安大学 一种静电式矿物微粒选取器
CN110595848B (zh) * 2018-06-12 2022-04-01 中国科学院苏州纳米技术与纳米仿生研究所 微米级颗粒透射电子显微镜样品的制备方法
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CN113804607A (zh) * 2020-06-17 2021-12-17 阅美测量系统（上海）有限公司 一种在扫描电镜与能谱仪（sem-edx）检测中固定颗粒的方法
CN111693555B (zh) * 2020-06-18 2021-08-10 中国科学院地球化学研究所 一种原位制备复杂结构样品中纳米级颗粒的tem样品的方法
WO2022178903A1 (fr) * 2021-02-28 2022-09-01 浙江大学 Procédé et dispositif de fabrication de microdispositif
CN116477566B (zh) * 2023-03-23 2024-04-09 清华大学 基于显微毛细管注射的单颗粒微电极制备方法

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Publication number Priority date Publication date Assignee Title
WO2008037305A1 (fr) * 2006-09-25 2008-04-03 Firma Dr.Roland Kilper dispositif et procédé de COLLECTe, de transport et de conservation d'échantillons microscopiques
DE102006045620B4 (de) * 2006-09-25 2009-10-29 Roland Dr. Kilper Vorrichtung und Verfahren für Aufnahme, Transport und Ablage mikroskopischer Proben
US8268265B2 (en) 2006-09-25 2012-09-18 Roland Kilper Apparatus and method for picking up, transporting, and depositing microscopic samples
EP1953789A1 (fr) * 2007-02-05 2008-08-06 FEI Company Procédé pour amincir un échantillon et support de l'échantillon pour effectuer ce procédé
EP1953790A1 (fr) * 2007-02-05 2008-08-06 FEI Company Procédé pour amincir un échantillon et support de l'échantillon pour effectuer ce procédé
US8389955B2 (en) 2007-02-05 2013-03-05 Fei Company Method for thinning a sample and sample carrier for performing said method
JP2013050665A (ja) * 2011-08-31 2013-03-14 National Univ Corp Shizuoka Univ 微小付着物剥離システムおよび微小付着物剥離方法
CN112180124A (zh) * 2020-08-31 2021-01-05 上海交通大学 一种原子力显微镜用亚微米探针的制备方法

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CN1977159A (zh) 2007-06-06

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