WO2005117216A3 - Short wavelength diode-pumped solid-state laser - Google Patents

Short wavelength diode-pumped solid-state laser Download PDF

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Publication number
WO2005117216A3
WO2005117216A3 PCT/US2005/019065 US2005019065W WO2005117216A3 WO 2005117216 A3 WO2005117216 A3 WO 2005117216A3 US 2005019065 W US2005019065 W US 2005019065W WO 2005117216 A3 WO2005117216 A3 WO 2005117216A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
wavelength
range
pumped solid
short wavelength
Prior art date
Application number
PCT/US2005/019065
Other languages
French (fr)
Other versions
WO2005117216A2 (en
Inventor
Eric B Takeuchi
David E Hargis
Original Assignee
Melles Griot Inc
Eric B Takeuchi
David E Hargis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Melles Griot Inc, Eric B Takeuchi, David E Hargis filed Critical Melles Griot Inc
Publication of WO2005117216A2 publication Critical patent/WO2005117216A2/en
Publication of WO2005117216A3 publication Critical patent/WO2005117216A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0602—Crystal lasers or glass lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08086—Multiple-wavelength emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1613—Solid materials characterised by an active (lasing) ion rare earth praseodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
    • H01S3/1673—YVO4 [YVO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Abstract

A diode-pumped solid-state laser including a short wavelength (e.g., due, violet, or UV) semiconductor laser that pumps an absorption transition in a rare-earth-doped material. Responsive to this pumping, the rare-earth active ion directly emits laser radiation. A number of different wavelength outputs, including short wavelengths, are achievable dependent upon the material and the pump wavelength. The gain medium may include an active ion selected from Er3+ Sm3+ Eu3+, Tb3+, D3+ Tm3+, Ho3+, and Pr3+. A laser diode pump source has a wavelength in the range of about 365nm to 480nm to excite a laser emission in the range of 370 to 800nm. The laser diode pump source may comprise a GaN­based semiconductor. In some embodiments, the laser diode pump source supplies a pump beam in a range of 370-380nm, 400-415nm, 435-445nm, or 468-478nm.
PCT/US2005/019065 2004-05-25 2005-05-25 Short wavelength diode-pumped solid-state laser WO2005117216A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57435104P 2004-05-25 2004-05-25
US60/574,351 2004-05-25

Publications (2)

Publication Number Publication Date
WO2005117216A2 WO2005117216A2 (en) 2005-12-08
WO2005117216A3 true WO2005117216A3 (en) 2007-02-01

Family

ID=35451560

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/019065 WO2005117216A2 (en) 2004-05-25 2005-05-25 Short wavelength diode-pumped solid-state laser

Country Status (1)

Country Link
WO (1) WO2005117216A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7414744B2 (en) 2020-02-21 2024-01-16 トヨタ自動車株式会社 Amplifying fiber and laser beam emitting device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008104910A2 (en) * 2007-02-27 2008-09-04 Philips Intellectual Property & Standards Gmbh Blue ld pumped praseodymium doped solid state laser device with reduced temperature dependence
JP5348917B2 (en) * 2008-03-21 2013-11-20 富士フイルム株式会社 Laser apparatus and microscope
CN105576490A (en) * 2016-03-09 2016-05-11 中国科学院合肥物质科学研究院 Method for realizing laser and frequency-doubled laser by utilizing GaN-based laser-diode-pumped rare-earth-ion-doped laser material

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5802086A (en) * 1996-01-29 1998-09-01 Laser Power Corporation Single cavity solid state laser with intracavity optical frequency mixing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5802086A (en) * 1996-01-29 1998-09-01 Laser Power Corporation Single cavity solid state laser with intracavity optical frequency mixing

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BIHARI B. ET AL.: "Spectroscopy of LiYF4: Eu3+ single Crystal", J. PHYS. CONDENS. MATTER, vol. 2, 1990, pages 5703 - 5713, XP020058466 *
COLAK S. ET AL.: "Transition of Tb3+ in TbP5O14 and TbA13(BO3)4: An evaluation for laser applications", J. APPLY PHYS., vol. 54, no. 5, 1983, pages 2156 - 2166, XP003007020 *
HSU C. ET AL.: "Energy Transfer in Europium doped Yttrium Vanadate Crystals", JOURNAL OF LUMINESCENCE, vol. 10, 1975, pages 273 - 293, XP003007022 *
RICHTER A. ET AL.: "Diode Pumping of a Continuous-Wave Pr3+ doped with LiYF4 Laser", OPTICS LETTERS, vol. 29, no. 22, 15 November 2004 (2004-11-15), pages 2638 - 2640, XP003007021 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7414744B2 (en) 2020-02-21 2024-01-16 トヨタ自動車株式会社 Amplifying fiber and laser beam emitting device

Also Published As

Publication number Publication date
WO2005117216A2 (en) 2005-12-08

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