WO2005114737A3 - BELEUCHTBARES GaAs-SCHALTBAUTEIL MIT TRANSPARENTEM GEHÄUSE UND MIKROWELLENSCHALTUNG HIERMIT - Google Patents

BELEUCHTBARES GaAs-SCHALTBAUTEIL MIT TRANSPARENTEM GEHÄUSE UND MIKROWELLENSCHALTUNG HIERMIT Download PDF

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Publication number
WO2005114737A3
WO2005114737A3 PCT/EP2005/004332 EP2005004332W WO2005114737A3 WO 2005114737 A3 WO2005114737 A3 WO 2005114737A3 EP 2005004332 W EP2005004332 W EP 2005004332W WO 2005114737 A3 WO2005114737 A3 WO 2005114737A3
Authority
WO
WIPO (PCT)
Prior art keywords
switching component
illuminable
microwave circuit
transparent housing
circuit therewith
Prior art date
Application number
PCT/EP2005/004332
Other languages
English (en)
French (fr)
Other versions
WO2005114737A2 (de
Inventor
Wilhelm Kraemer
Original Assignee
Rohde & Schwarz
Wilhelm Kraemer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohde & Schwarz, Wilhelm Kraemer filed Critical Rohde & Schwarz
Priority to DE502005002051T priority Critical patent/DE502005002051D1/de
Priority to US11/578,883 priority patent/US8796801B2/en
Priority to EP05732275A priority patent/EP1747588B1/de
Publication of WO2005114737A2 publication Critical patent/WO2005114737A2/de
Publication of WO2005114737A3 publication Critical patent/WO2005114737A3/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4255—Moulded or casted packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13063—Metal-Semiconductor Field-Effect Transistor [MESFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)

Abstract

Ein elektronisches Schaltbauteil (1) mit Feldeffekt-Transistoren auf Galium-Arsenid-Basis weist ein eigenes Gehäuse (2) mit wenigstens einem lichtdurchlässigen Abschnitt (3) auf und eine elektronische Mikrowellen-Schaltung (10) weist zumindest ein elektronisches Schaltbauteil (1) mit Feldeffekt-Transistoren auf Galium-­Arsenid-Basis und einem eigenen Gehäuse (2) mit wenigstens einem lichtdurchlässigen Abschnitt (3) auf, wobei das zumindest eine elektronische Schaltbauteil (1) durch zumindest eine Lichtquelle (6, 11) beleuchtbar ist.
PCT/EP2005/004332 2004-05-17 2005-04-22 BELEUCHTBARES GaAs-SCHALTBAUTEIL MIT TRANSPARENTEM GEHÄUSE UND MIKROWELLENSCHALTUNG HIERMIT WO2005114737A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE502005002051T DE502005002051D1 (de) 2004-05-17 2005-04-22 BELEUCHTBARES GaAs-SCHALTBAUTEIL MIT TRANSPARENTEM GEHÄUSE UND MIKROWELLENSCHALTUNG HIERMIT
US11/578,883 US8796801B2 (en) 2004-05-17 2005-04-22 Illuminable GaAs switching component with transparent housing and associated microwave circuit
EP05732275A EP1747588B1 (de) 2004-05-17 2005-04-22 BELEUCHTBARES GaAs-SCHALTBAUTEIL MIT TRANSPARENTEM GEHÄUSE UND MIKROWELLENSCHALTUNG HIERMIT

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004024368A DE102004024368A1 (de) 2004-05-17 2004-05-17 Beleuchtbares GaAs-Schaltbauteil mit transparentem Gehäuse und Mikrowellenschaltung hiermit
DE102004024368.9 2004-05-17

Publications (2)

Publication Number Publication Date
WO2005114737A2 WO2005114737A2 (de) 2005-12-01
WO2005114737A3 true WO2005114737A3 (de) 2006-08-10

Family

ID=35169767

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2005/004332 WO2005114737A2 (de) 2004-05-17 2005-04-22 BELEUCHTBARES GaAs-SCHALTBAUTEIL MIT TRANSPARENTEM GEHÄUSE UND MIKROWELLENSCHALTUNG HIERMIT

Country Status (4)

Country Link
US (1) US8796801B2 (de)
EP (1) EP1747588B1 (de)
DE (2) DE102004024368A1 (de)
WO (1) WO2005114737A2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE1550580A1 (en) 2015-05-07 2016-11-08 Myfc Ab Fuel cell based charger system and fuel generator therefor
WO2016198100A1 (en) 2015-06-10 2016-12-15 Advantest Corporation High frequency integrated circuit and emitting device for irradiating the integrated circuit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1299087B (de) * 1966-05-10 1969-07-10 Siemens Ag Feldeffekt-Fototransistor
US4394572A (en) * 1981-04-01 1983-07-19 Biox Technology, Inc. Photodetector having an electrically conductive, selectively transmissive window
EP0348361A2 (de) * 1988-06-22 1989-12-27 STMicroelectronics S.r.l. Hohle Plastikpackung für Halbleiteranordnungen
US6420205B1 (en) * 1999-03-24 2002-07-16 Kyocera Corporation Method for producing package for housing photosemiconductor element
US20040036462A1 (en) * 2002-06-27 2004-02-26 Rohde & Schwarz Gmbh & Co. Kg Microwave switching with illuminatd field effect transistors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2669145B1 (fr) * 1990-11-09 1994-02-11 Thomson Tubes Electroniques Canon a electrons module par commutation optoelectronique.
JP3233983B2 (ja) * 1991-05-24 2001-12-04 キヤノン株式会社 キャリアの吐き出しの為の手段を有する光検出器及びそれを用いた光通信システム
DE4136690C2 (de) * 1991-11-07 1996-01-18 Siemens Ag Anordnung zum optischen Anschluß von optischen Sende/-Empfangselementen jeweils an Lichtwellenleiter und Verfahren zu seiner Herstellung
US5304794A (en) * 1993-05-25 1994-04-19 The United States Of America As Represented By The Secretary Of The Army Method for mixing optical and microwave signals using a GaAs MESFET
US5623233A (en) * 1993-11-10 1997-04-22 The United States Of America As Represented By The Secretary Of The Army Pulsed optically injection locked MESFET oscillator
DE29504789U1 (de) * 1995-03-21 1995-05-11 Ic Haus Gmbh Kunststoffgehäuse
JP4231166B2 (ja) * 1999-09-30 2009-02-25 京セラ株式会社 光半導体装置
US6440778B1 (en) 2000-01-07 2002-08-27 The Furukawa Electric Co., Ltd. Optical semiconductor element package and manufacturing method thereof
US20030223705A1 (en) * 2002-06-03 2003-12-04 Hill William F. Method for terminating an optical waveguide into an optical component
US6945712B1 (en) * 2003-02-27 2005-09-20 Xilinx, Inc. Fiber optic field programmable gate array integrated circuit packaging

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1299087B (de) * 1966-05-10 1969-07-10 Siemens Ag Feldeffekt-Fototransistor
US4394572A (en) * 1981-04-01 1983-07-19 Biox Technology, Inc. Photodetector having an electrically conductive, selectively transmissive window
EP0348361A2 (de) * 1988-06-22 1989-12-27 STMicroelectronics S.r.l. Hohle Plastikpackung für Halbleiteranordnungen
US6420205B1 (en) * 1999-03-24 2002-07-16 Kyocera Corporation Method for producing package for housing photosemiconductor element
US20040036462A1 (en) * 2002-06-27 2004-02-26 Rohde & Schwarz Gmbh & Co. Kg Microwave switching with illuminatd field effect transistors

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
SIMONS R N ET AL: "ANALYSIS OF OPTICALLY CONTROLLED MICROWAVE/MILLIMETER-WAVE DEVICE STRUCTURES", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. MTT-34, no. 12, 1 December 1986 (1986-12-01), pages 1349 - 1355, XP000111727, ISSN: 0018-9480 *
SUN C K ET AL: "Photovoltaic-FET for Optoelectronic RF/<maths><tex>$\mbi{\mu}$</tex>< /maths>wave Switching", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, IEEE SERVICE CENTER, PISCATAWAY, NJ, US, vol. 44, no. 10, October 1996 (1996-10-01), XP011036588, ISSN: 0018-9480 *

Also Published As

Publication number Publication date
DE502005002051D1 (de) 2008-01-03
EP1747588B1 (de) 2007-11-21
US20080266032A1 (en) 2008-10-30
DE102004024368A1 (de) 2005-12-15
US8796801B2 (en) 2014-08-05
EP1747588A2 (de) 2007-01-31
WO2005114737A2 (de) 2005-12-01

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